CN214473738U - Device for measuring thermal resistance of semiconductor chip - Google Patents
Device for measuring thermal resistance of semiconductor chip Download PDFInfo
- Publication number
- CN214473738U CN214473738U CN202023288283.4U CN202023288283U CN214473738U CN 214473738 U CN214473738 U CN 214473738U CN 202023288283 U CN202023288283 U CN 202023288283U CN 214473738 U CN214473738 U CN 214473738U
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- temperature
- detected
- temperature sensor
- tested
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a measure device of semiconductor chip thermal resistance, the device include heating panel, detection module, first temperature sensor, second temperature sensor and data processor: the heat dissipation plate is provided with a detection part, and the semiconductor chip to be detected is fixed on the detection part; the detection module is used for supplying power to the semiconductor chip to be detected and detecting power supply parameters; the first temperature sensor is connected with one surface of the semiconductor chip to be detected, which is close to the heat dissipation plate, through the detection part and is used for detecting the first temperature of the semiconductor chip to be detected; the second temperature sensor is connected with one surface of the semiconductor chip to be detected, which is far away from the heat dissipation plate, and is used for detecting the second temperature of the semiconductor chip to be detected; the data processor is respectively connected with the first temperature sensor and the second temperature sensor and is used for obtaining the thermal resistance of the semiconductor chip to be tested according to the first temperature, the second temperature and the power supply parameter. The utility model discloses device is with low costs, reduces and detects the deviation.
Description
Technical Field
The utility model belongs to the technical field of the chip detects technique and specifically relates to a measure device of semiconductor chip thermal resistance is related to.
Background
With the increasing functions of domestic integrated circuits, the reliability requirements are also higher, and the accurate and rapid measurement of the semiconductor thermal resistance from the semiconductor chip wafer to the heat dissipation plate and the thermal parameters on the main heat conduction path are key steps for ensuring the reliability.
At present, the thermal resistance of a semiconductor chip is usually measured by purchasing an automatic precision test device, the automatic precision test device can automatically display the size of the thermal resistance of the semiconductor, but the cost is high, and a temperature probe is connected with the chip through a wire harness, the path of the detection chip is long, the chip cannot be directly contacted with the chip, and the detection deviation exists.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, an object of the present invention is to provide a device for measuring thermal resistance of a semiconductor chip, which is low in cost and reduces detection deviation.
In order to achieve the above object, the device for measuring thermal resistance of a semiconductor chip according to an embodiment of the present invention is characterized in that a detection portion is disposed on the heat dissipation plate, and the semiconductor chip to be measured is fixed to the detection portion; the first end of the detection module is connected with the power supply terminal of the semiconductor chip to be detected, and the second end of the detection module is connected with the grounding terminal of the semiconductor chip to be detected, and is used for supplying power to the semiconductor chip to be detected and detecting power supply parameters; the first temperature sensor is connected with one surface, close to the heat dissipation plate, of the semiconductor chip to be detected through the detection part and is used for detecting the first temperature of the semiconductor chip to be detected; the second temperature sensor is connected with one surface, far away from the heat dissipation plate, of the semiconductor chip to be detected and is used for detecting a second temperature of the semiconductor chip to be detected; and the data processor is respectively connected with the first temperature sensor and the second temperature sensor and is used for obtaining the thermal resistance of the semiconductor chip to be tested according to the first temperature, the second temperature and the power supply parameter.
According to the utility model discloses measure device of semiconductor chip thermal resistance based on heating panel, detection module, first temperature sensor, second temperature sensor and data processor's framework, the heating panel is equivalent to the chip cooling cap in the equipment, measures semiconductor chip thermal resistance, wherein, heating panel, first temperature sensor and second temperature sensor etc. all can adopt the detecting part commonly used, and are with low costs. The first temperature sensor detects the first temperature of the semiconductor chip to be detected through the detection part of the heat dissipation plate, and the second temperature sensor detects the second temperature of the semiconductor chip to be detected, so that the thermal resistance of the semiconductor chip is obtained, and the semiconductor chip is directly contacted with the chip for temperature detection, so that the detection path is shortened, other element interference does not exist, the detection precision is improved, and the detection deviation is reduced.
In some embodiments of the present invention, the detection part is provided with a probe hole; the first temperature sensor penetrates through the probe hole to be connected with the Top layer of the semiconductor chip to be detected so as to detect the first temperature.
In some embodiments of the present invention, the first temperature sensor is connected to a central region of a wafer of a Top layer of the semiconductor chip to be tested.
In some embodiments of the present invention, the second temperature sensor is connected to the Bottom layer of the semiconductor chip to be tested.
In some embodiments of the present invention, the second temperature sensor is connected to a central region of a wafer of a Bottom layer of the semiconductor chip to be tested.
In some embodiments of the present invention, the semiconductor chip to be tested is fixed to the detecting portion through the silica gel.
In some embodiments of the present invention, the detection module comprises: the electronic load is used for detecting the current flowing through the semiconductor chip to be detected; a first end of the direct current power supply is connected with a power terminal of the semiconductor chip to be tested, and a second end of the direct current power supply is connected with a grounding terminal of the semiconductor chip to be tested through the electronic load; and the voltmeter is connected with the semiconductor chip to be detected in parallel and is used for detecting the voltage at two ends of the semiconductor chip to be detected.
In the embodiment of the utility model, DC power supply is used for providing the direct current for the semiconductor chip that awaits measuring, and electronic load and voltmeter are used for obtaining current parameter and voltage parameter. The electronic load, the direct current power supply and the voltmeter are all common detection components, and cost is low.
In some embodiments of the present invention, the apparatus further comprises: the temperature sensor comprises a first fixing piece for fixing the first temperature sensor, and a second fixing piece for fixing the second temperature sensor.
In some embodiments of the present invention, the first fixing member and the second fixing member each include fixing glue.
In some embodiments of the present invention, the apparatus further comprises: the infrared thermometer is connected with the data processor and is used for acquiring a first infrared detection temperature of one surface, close to the heat dissipation plate, of the semiconductor chip to be detected and/or acquiring a second infrared detection temperature of one surface, far away from the heat dissipation plate, of the semiconductor chip to be detected; the data processor is further configured to calibrate the first temperature according to the first infrared detection temperature, and/or calibrate the second temperature according to the second infrared detection temperature.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a block diagram of an apparatus for measuring thermal resistance of a semiconductor chip according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a cross-section of an apparatus for measuring thermal resistance of a semiconductor chip according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a detection module and its connections according to an embodiment of the present invention;
fig. 4 is a block diagram of an apparatus for measuring thermal resistance of a semiconductor chip according to another embodiment of the present invention.
Reference numerals:
the device comprises a device 01 for measuring the thermal resistance of a semiconductor chip and a semiconductor chip 02 to be measured;
the temperature measuring device comprises a heat dissipation plate 10, a detection module 20, a first temperature sensor 30, a second temperature sensor 40, a data processor 50, a first fixing piece 60, a second fixing piece 70 and an infrared thermometer 80;
the device comprises a power supply terminal 1, a ground terminal 2, a Top layer 3, a Bottom layer 4, a wafer 5 and a wafer 6;
a detection unit 110, an electronic load 210, a dc power supply 220, and a voltmeter 230;
a probe aperture 111.
Detailed Description
Embodiments of the present invention are described in detail below, and the embodiments described with reference to the drawings are exemplary.
An apparatus for measuring thermal resistance of a semiconductor chip according to an embodiment of the present invention is described below with reference to fig. 1 to 4.
Fig. 1 is a block diagram of an apparatus for measuring thermal resistance of a semiconductor chip according to an embodiment of the present invention, and as shown in fig. 1, the apparatus 01 for measuring thermal resistance of a semiconductor chip at least includes a heat dissipation plate 10, a detection module 20, a first temperature sensor 30, a second temperature sensor 40, and a data processor 50.
The heat sink 10 is provided with a detection unit 110, and the semiconductor chip 02 to be tested is fixed to the detection unit 110. A first end of the detection module 20 is connected to the power terminal 1 of the semiconductor chip 02 to be tested, and a second end of the detection module 20 is connected to the ground terminal 2 of the semiconductor chip 02 to be tested, for supplying power to the semiconductor chip 02 to be tested and detecting power supply parameters. The first temperature sensor 30 is connected to a surface of the semiconductor chip 02 to be measured near the heat sink 10 through the detection unit 110, and detects the temperature of the semiconductor chip 02 to be measured, and is referred to as a first temperature. The second temperature sensor 40 is connected to a surface of the semiconductor chip 02 to be measured away from the heat dissipation plate 10, and is configured to detect a temperature of the semiconductor chip 02 to be measured, which is referred to as a second temperature. The data processor 50 is connected to the first temperature sensor 30 and the second temperature sensor 40, respectively, and is configured to obtain the thermal resistance of the semiconductor chip 02 to be measured according to the first temperature, the second temperature, and the power supply parameter.
The embodiment of the utility model provides an in, heating panel 10 is equivalent to semiconductor chip's in the equipment radiator cap, and heating panel 10 can adopt the comparatively big and comparatively thick steel sheet of thickness of an area, and the cost ratio of steel sheet is lower, and the specific heat capacity is less, the heat dissipation is fast, and detection portion 110 on the heating panel 10 is used for providing detection area. The semiconductor chip 02 to be tested is closely attached to the heat dissipation plate 10 and fixed in the detection area of the detection part 110, so that the heat of the semiconductor chip 02 to be tested can be completely dissipated from the heat dissipation plate 10 in the detection process.
In some embodiments of the present invention, the semiconductor chip to be tested is fixed to the detecting portion 110 through the heat-dissipating silica gel. The heat dissipation silicone has an adhesive effect, and can be used for adhering the semiconductor chip 02 to be tested and the heat dissipation plate 10. And the heat-conducting effect of the heat-dissipating silica gel is good, and the heat-dissipating silica gel has a heat-dissipating effect. Specifically, an operator may thinly coat the heat dissipation silicone on the detection portion 110 with a finger, attach the semiconductor chip 02 to be tested to the heat dissipation silicone, press the heat dissipation silicone as thin as possible, and press the semiconductor chip 02 to be tested, where the thinly coating the heat dissipation silicone does not affect the thermal characteristics, and can maximally ensure that all heat of the semiconductor chip 02 to be tested is dissipated from the heat dissipation plate 10.
The detection module 20 is used for supplying power to the semiconductor chip 02 to be tested and detecting power supply parameters. For example, the detection module 20 may provide the semiconductor chip 02 to be tested with direct current or alternating current required by the semiconductor chip 02 to be tested, and the power supply parameters may include voltage parameters, current parameters, electric power parameters, and the like of the semiconductor chip 02 to be tested.
The first temperature sensor 30 and the second temperature sensor 40 are used for detecting the temperatures of different detection points of the semiconductor chip 02 to be detected, for example, the detection probe of the first temperature sensor 30 is directly contacted with one detection point on one surface, close to the heat dissipation plate 10, of the semiconductor chip 02 to be detected through the detection part 110 to detect the first temperature of the semiconductor chip 02 to be detected, the detection probe of the second temperature sensor 40 is directly contacted with the other detection point on one surface, far away from the heat dissipation plate 10, of the semiconductor chip 02 to be detected, so that the semiconductor chip 02 to be detected can be directly contacted, the detection path is short, the interference of other components is avoided, the detection accuracy is improved, and the detection error is reduced.
According to the utility model discloses measure device 01 of semiconductor chip thermal resistance, based on heating panel 10, detection module 20, first temperature sensor 30, second temperature sensor 40 and data processor 50's framework, heating panel 10 is equivalent to the equipment in the chip cooling cap, measures the semiconductor chip thermal resistance, wherein, heating panel 10, first temperature sensor 30 and second temperature sensor 40 etc. all can adopt the detecting part commonly used, and is with low costs. The first temperature sensor 30 detects the first temperature of the semiconductor chip 02 to be detected through the detection portion 110 of the heat dissipation plate 10, and the second temperature sensor 40 detects the second temperature of the semiconductor chip 02 to be detected, so as to obtain the thermal resistance of the semiconductor chip 02 to be detected, and directly contact the chip to detect the temperature, thereby shortening the detection path, avoiding the interference of other elements, improving the detection precision and reducing the detection deviation.
In an embodiment of the present invention, as shown in fig. 2, the schematic diagram of a cross section of an apparatus for measuring thermal resistance of a semiconductor chip according to an embodiment of the present invention is shown. Wherein the detecting part 110 is provided with a probe hole 111. The first temperature sensor 30 is connected to the Top layer 3 of the semiconductor chip 02 to be tested through the probe hole 111 to detect a first temperature of the semiconductor chip 02 to be tested. The Top layer 3 of the semiconductor chip 02 to be tested is a layer of the semiconductor chip 02 to be tested, which is close to the heat dissipation plate 10.
In the embodiment of the present invention, the semiconductor chip 02 to be tested is fixed on the heat dissipating plate 10, after the power supply of the detecting module 20 is started, the heat generated by the semiconductor chip 02 to be tested should be totally dissipated to the heat dissipating plate 10, the first temperature detected by the first temperature sensor 30 is the temperature of the TOP layer of the semiconductor chip 02 to be tested, and it can be noted that the first temperature is Tc, and the unit is ℃.
In an embodiment of the present invention, as shown in fig. 2, the first temperature sensor 30 is connected to the central region of the wafer 5 of the Top layer 3 of the semiconductor chip 02 to be tested. The wafer 5 is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and may be circular in shape. Since the heat dissipation plate 10 has a large area, a thick thickness, and a fast heat dissipation, if the temperature of the surface of the heat dissipation plate 10 is directly obtained, the detection accuracy is low. By providing the probe hole 111 in the inspection portion 110, the thermocouple temperature probe of the first temperature sensor 30 can pass through the probe hole 111, be connected to the central region of the wafer 5 of the Top layer 3 of the semiconductor chip 02 to be inspected, and directly contact the semiconductor chip 02 to be inspected, thereby improving inspection accuracy and reducing inspection interference.
In the embodiment of the present invention, as shown in fig. 2, the second temperature sensor 40 is connected to the Bottom layer 4 of the semiconductor chip 02 to be tested. The Bottom layer 4 of the semiconductor chip 02 to be tested is a layer far away from the heat dissipation plate 10, and the second temperature sensor 40 can directly detect the temperature of the Bottom layer 4 of the semiconductor chip 02 to be tested.
More specifically, as shown in fig. 2, the second temperature sensor 40 is connected to the central region of the wafer 6 of the Bottom layer 4 of the semiconductor chip 02 to be tested.
The utility model discloses an in the embodiment, can be through the thermocouple temperature probe of second temperature sensor 40, directly be connected with the central region of the Bottom layer 4's of the semiconductor chip 02 that awaits measuring wafer 6, improve and detect the precision, the central region temperature of the wafer in the one side of heating panel 10 is kept away from for the semiconductor chip 02 that awaits measuring for the temperature of the semiconductor chip 02 that detects actually, can mark the semiconductor chip 02 wafer central region temperature that awaits measuring as the second temperature, expresses with Tj, and the unit is ℃.
In an embodiment of the present invention, as shown in fig. 3, the schematic diagram of the detection module and its connection according to an embodiment of the present invention, wherein the detection module 20 includes an electronic load 210, a dc power supply 220 and a voltmeter 230.
The electronic load 210 is used for detecting a current flowing through the semiconductor chip 02 to be tested. A first end of the dc power supply 220 is connected to a power supply terminal 1 of the semiconductor chip 02 to be tested, and a second end of the dc power supply 220 is connected to a ground terminal 2 of the semiconductor chip 02 to be tested via an electronic load 210. The voltmeter 230 is connected in parallel with the semiconductor chip 02 to be tested, and is configured to detect a voltage across the semiconductor chip 02 to be tested. The electronic load 210, the dc power supply 220 and the voltmeter 230 are all common detection components, and the cost is relatively low.
In an embodiment of the present invention, the dc power supply 220 is used for providing dc power for the semiconductor chip 02 to be tested. For example, the Bottom layer 4 of the semiconductor chip 02 to be tested is provided with a power terminal 1 and a ground terminal 2, and the dc power supply 220 is connected to the power terminal 1 and the ground terminal 2, respectively, to supply power to the semiconductor chip 02 to be tested. The electronic load 210 is connected in series between the first end of the dc power supply 220 and the power supply terminal 1 of the semiconductor chip 02 to be tested, and is used for detecting a current parameter, which is denoted as I and has a unit of a. The voltmeter 230 is used for obtaining a voltage parameter across the semiconductor chip 02 to be tested, for example, the voltage parameter is U and the unit is V. The detection module 20 can also obtain an electric power parameter of the semiconductor chip 02 to be tested according to the current parameter I and the voltage parameter U, for example, the electric power parameter can be recorded as P, and the unit is W.
The utility model discloses an in the embodiment, after DC power supply 220's power supply time more than or equal to 20 minutes, the data of gathering such as rerecording electronic load 210, voltmeter 230 and temperature sensor, the semiconductor chip 02 operating condition that awaits measuring this moment is stable, and can fully dispel the heat, can guarantee current parameter and voltage parameter and temperature data's stability to improve the detection precision.
Specifically, in the detection process, the collected current parameter I and the voltage parameter U are calculated according to the method shown in the formula (1-1), and the electric power parameter P of the semiconductor chip 02 to be detected can be obtained. And reading the readings of the first temperature sensor 30 and the second temperature sensor 40 simultaneously to obtain a first temperature Tc and a second temperature Tj, and calculating the first temperature Tc, the second temperature Tj and the electric power parameter P according to a method shown in the formula (1-2) to obtain the thermal resistance of the semiconductor chip 02 to be measured.
UI type (1-1)
θ Jc ═ t (Tj-Tc)/P formula (1-2)
The thermal resistance of the semiconductor chip 02 to be tested can be represented by θ Jc in units of ℃/W.
The utility model discloses an in the embodiment, in the testing process, can also be through the output current of debugging DC power supply 220 to obtain different electric power parameter P, can measure the thermal resistance of the semiconductor chip 02 that awaits measuring under the different consumption, measure many times and can improve the accuracy of testing result and decide. For example, the thermal resistance θ Jc of the semiconductor chip 02 to be tested may be measured when the electric power parameter of the semiconductor chip 02 to be tested is 1W or 2W or 3W. The acquired data information of the first temperature Tc, the second temperature Tj, the electric power parameter P, etc. may be automatically calculated according to the data as shown in table (1-1).
As shown in table (1-1), for example, when P is 0.99W, the wafer center region temperature of the semiconductor chip to be measured is detected to be 50.5 c, the heat sink wafer center region temperature is detected to be 29.0 c, and the measured semiconductor thermal resistance θ Jc is 21.7 ℃/W. For another example, when P is 2.98W, the wafer center region temperature of the semiconductor chip to be measured is detected to be 93.0 ℃, the wafer center region temperature of the heat dissipation plate is detected to be 33.1 ℃, and the measured semiconductor thermal resistance θ Jc is 20.08 ℃/W.
Watch (1-1)
In the embodiment of the present invention, the apparatus 01 for measuring the thermal resistance of the semiconductor chip further includes a first fixing member 60 and a second fixing member 70. Wherein the first fixing member 70 is used for fixing the first temperature sensor 30, and the second fixing member 80 is used for fixing the second temperature sensor 40.
In the embodiment of the present invention, the probe of the first temperature sensor 30 is passed through the probe hole, and the first temperature sensor 30 is fixed by the first fixing member 60, and the second temperature sensor 40 is fixed by the second fixing member 70 on the Bottom layer 4 of the semiconductor chip 02 to be tested. The temperature probe is directly contacted with the chip, the detection path is short, the detection precision can be improved, and the detection interference is reduced.
In an embodiment of the present invention, the first fixing member 60 and the second fixing member 70 each include fixing glue. The fixing glue has strong bonding capability, can bond and fix the first temperature sensor 30 and the second temperature sensor 40, and has low cost.
In an embodiment of the present invention, as shown in fig. 4, a block diagram of an apparatus for measuring a thermal resistance of a semiconductor according to another embodiment of the present invention is shown. In the embodiment, the infrared thermometer 80 is used for acquiring a first infrared detection temperature of one surface of the semiconductor chip 02 to be detected, which is close to the heat dissipation plate 10, and/or acquiring a second infrared detection temperature of one surface of the semiconductor chip 02 to be detected, which is far away from the heat dissipation plate 10.
The embodiment of the present invention provides an infrared thermometer 80 disposed near the heat dissipation plate 10 and the semiconductor chip 02 to be tested, and kept a certain distance from the heat dissipation plate 10 and the semiconductor chip 02 to be tested. The infrared thermometer 80 can obtain the temperature of the surface of the semiconductor chip 02 to be measured by detecting the radiant energy of the infrared rays emitted from the object. The first infrared detection temperature is a surface temperature of one surface of the semiconductor chip 02 to be detected, which is close to the heat dissipation plate 10, and the second infrared detection temperature is a surface temperature of one surface of the semiconductor chip 02 to be detected, which is far away from the heat dissipation plate 10. The infrared thermometer 80 transmits the collected first infrared detection temperature and the second infrared detection temperature to the data processor 50, and the data processor 50 is further configured to calibrate the first temperature according to the first infrared detection temperature and/or calibrate the second temperature according to the second infrared detection temperature.
The utility model discloses an in the embodiment, through the temperature that detects temperature sensor according to the infrared detection temperature that infrared thermometer 80 detected calibrate, recycle the first temperature and the second temperature after the calibration and calculate, can obtain comparatively accurate thermal resistance value of the semiconductor chip 02 that awaits measuring, improve the detection precision of the thermal resistance of the semiconductor chip 02 that awaits measuring.
Further, after obtaining the thermal resistance of the semiconductor chip 02 to be tested, the obtained thermal resistance of the semiconductor chip 02 to be tested can be compared with a thermal simulation result, and the influence of the heat dissipation cover on the thermal resistance of the semiconductor chip 02 to be tested can be evaluated, for example, through comparison of specifications of manufacturers of the heat dissipation cover, whether product parameters meet the specifications or not is verified, and if the temperature of the chip exceeds a threshold value, for example, 100 degrees in the using process, replacement of a heat dissipation cover material with lower thermal resistance can be considered.
Generally speaking, the utility model discloses measure device 01 of semiconductor thermal resistance through setting up certain experimental environment, changes the check point of the semiconductor chip thermal resistance 02 that awaits measuring, shortens the measuring path, can improve and detect the precision, reduce and detect the interference, and the detecting element that the device adopted is the detecting element commonly used, and is with low costs.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A device for measuring the thermal resistance of a semiconductor chip is characterized in that,
the semiconductor chip to be detected is fixed on the detection part;
the first end of the detection module is connected with the power supply terminal of the semiconductor chip to be detected, and the second end of the detection module is connected with the grounding terminal of the semiconductor chip to be detected, and is used for supplying power to the semiconductor chip to be detected and detecting power supply parameters;
the first temperature sensor is connected with one surface, close to the heat dissipation plate, of the semiconductor chip to be detected through the detection part and is used for detecting the first temperature of the semiconductor chip to be detected;
the second temperature sensor is connected with one surface, far away from the heat dissipation plate, of the semiconductor chip to be detected and is used for detecting a second temperature of the semiconductor chip to be detected;
and the data processor is respectively connected with the first temperature sensor and the second temperature sensor and is used for obtaining the thermal resistance of the semiconductor chip to be tested according to the first temperature, the second temperature and the power supply parameter.
2. The apparatus for measuring thermal resistance of a semiconductor chip according to claim 1,
the detection part is provided with a probe hole;
the first temperature sensor penetrates through the probe hole to be connected with the Top layer of the semiconductor chip to be detected so as to detect the first temperature.
3. The apparatus for measuring thermal resistance of a semiconductor chip according to claim 2,
the first temperature sensor is connected with the central area of the wafer of the Top layer of the semiconductor chip to be tested.
4. The apparatus for measuring thermal resistance of a semiconductor chip according to claim 2 or 3,
and the second temperature sensor is connected with the Bottom layer of the semiconductor chip to be tested.
5. The apparatus of claim 4, wherein the second temperature sensor is connected to a central region of a wafer of a Bottom layer of the semiconductor die under test.
6. The apparatus for measuring thermal resistance of a semiconductor chip as claimed in claim 2, wherein the semiconductor chip to be tested is fixed to the inspection part by a heat-dissipating silicone.
7. The apparatus of claim 1, wherein the detection module comprises:
the electronic load is used for detecting the current flowing through the semiconductor chip to be detected;
a first end of the direct current power supply is connected with a power terminal of the semiconductor chip to be tested, and a second end of the direct current power supply is connected with a grounding terminal of the semiconductor chip to be tested through the electronic load;
and the voltmeter is connected with the semiconductor chip to be detected in parallel and is used for detecting the voltage at two ends of the semiconductor chip to be detected.
8. The apparatus of claim 1, further comprising:
the temperature sensor comprises a first fixing piece for fixing the first temperature sensor, and a second fixing piece for fixing the second temperature sensor.
9. The apparatus of claim 8, wherein the first and second fixtures each comprise a mounting glue.
10. The apparatus of claim 1, further comprising:
the infrared thermometer is connected with the data processor and is used for acquiring a first infrared detection temperature of one surface, close to the heat dissipation plate, of the semiconductor chip to be detected and/or acquiring a second infrared detection temperature of one surface, far away from the heat dissipation plate, of the semiconductor chip to be detected;
the data processor is further configured to calibrate the first temperature according to the first infrared detection temperature, and/or calibrate the second temperature according to the second infrared detection temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023288283.4U CN214473738U (en) | 2020-12-29 | 2020-12-29 | Device for measuring thermal resistance of semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023288283.4U CN214473738U (en) | 2020-12-29 | 2020-12-29 | Device for measuring thermal resistance of semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214473738U true CN214473738U (en) | 2021-10-22 |
Family
ID=78136217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023288283.4U Active CN214473738U (en) | 2020-12-29 | 2020-12-29 | Device for measuring thermal resistance of semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214473738U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115372782A (en) * | 2022-10-27 | 2022-11-22 | 英诺赛科(苏州)半导体有限公司 | Test system and semiconductor test method |
-
2020
- 2020-12-29 CN CN202023288283.4U patent/CN214473738U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115372782A (en) * | 2022-10-27 | 2022-11-22 | 英诺赛科(苏州)半导体有限公司 | Test system and semiconductor test method |
| CN115372782B (en) * | 2022-10-27 | 2023-12-05 | 英诺赛科(苏州)半导体有限公司 | Test system and semiconductor test method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7394271B2 (en) | Temperature sensing and prediction in IC sockets | |
| CN101495821A (en) | Temperature sensing and prediction in ic sockets | |
| US8547122B2 (en) | Temperature measurement of active device under test on strip tester | |
| Steffens et al. | Thermal transient characterization methodology for single-chip and stacked structures | |
| CN109186795A (en) | The evaluation method of IGBT module shell temperature | |
| CN103175861A (en) | Junction-to-case thermal resistance testing method | |
| CN105223488A (en) | The semi-conductor discrete device package quality detection method of structure based function and system | |
| CN214473738U (en) | Device for measuring thermal resistance of semiconductor chip | |
| CN106124955B (en) | The transient electrical test method of liquid cold plate thermal resistance | |
| CN103323486A (en) | Test chip for Seebeck coefficient of high resistance material | |
| CN107300663B (en) | Test method of semiconductor junction temperature test device | |
| Kim | Thermal simulation and measurement of SiC MOSETs | |
| Elger et al. | Inline thermal transient testing of high power LED modules for solder joint quality control | |
| US10156512B2 (en) | System and method for measuring thermal reliability of multi-chip modules | |
| US6825651B2 (en) | Test method for characterizing currents associated with powered components in an electronic system | |
| CN217901039U (en) | Temperature measuring device and temperature measuring system | |
| US20060156080A1 (en) | Method for the thermal testing of a thermal path to an integrated circuit | |
| Chen et al. | Transient thermal resistance analysis for ic packages | |
| Panchal et al. | Accurate, versatile and compact transient measurement system for fast thermal package characterization and health monitoring | |
| Galloway et al. | Developing a Theta JC standard for electronic packages | |
| KR20090003288A (en) | A circuit lid with a thermocouple | |
| CN211178799U (en) | Metering device for temperature sensor | |
| O'Flaherty et al. | Thermal resistance measurement protocols | |
| CN217085734U (en) | CPU heating and heat transfer simulation device and heat dissipation testing device | |
| Cermak et al. | A transient thermal tester as an alternative to thermocouples for characterizing heat sinks |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |