CN202119874U - Measure apparatus of diode thermal resistance - Google Patents
Measure apparatus of diode thermal resistance Download PDFInfo
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- CN202119874U CN202119874U CN 201020683091 CN201020683091U CN202119874U CN 202119874 U CN202119874 U CN 202119874U CN 201020683091 CN201020683091 CN 201020683091 CN 201020683091 U CN201020683091 U CN 201020683091U CN 202119874 U CN202119874 U CN 202119874U
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Abstract
The utility model discloses a measure apparatus of a diode thermal resistance. The measure apparatus adopts a synchronization rapid sampling unit; under a set relatively high temperature value, when the rising junction temperature of the measured diode can be omitted, voltage amplitudes of two ends of the measured diode are rapidly measured; PN junction temperature of a measured diode is controlled through a control unit and a heating/refrigeration unit; a difference value between junction temperature of the measured diode and outside reference environmental temperature (or a reference point temperature of a heat radiation channel) under a stable condition is obtained; an input electric power of the measured diode of rising junction temperature is simultaneously measured; and thermal resistance of the measured diode can be calculated. The measure apparatus of a diode thermal resistance can realize accurate measure of a diode thermal resistance; measuring is simple and rapid; operation is convenient; and the stability is good.
Description
[technical field]
The utility model belongs to the semiconductor devices field of measurement, refers in particular to a kind of diode heat resistance measurement mechanism.
[background technology]
Diode can produce a large amount of heat in the course of the work, causes PN junction place temperature to raise, thereby influences the serviceability and the serviceable life of diode, and therefore in the structural design of diode, its heat dissipating is a key factor must considering.The thermal resistance of diode is promptly represented the ability of diode distribute heat.Accurately the measuring diode thermal resistance has the important references meaning to encapsulation and the heat dissipation design of improving diode, helps diode to realize development apace and use more widely.
According to encapsulation diode inner structure, after device inside produced heat, heat was through PN junction, and heat radiation shell, substrate, the heat sink external environment condition that is diffused into are with reference to figure 1.
Calculating the diode heat resistance formula according to the thermal resistance definition is:
T
JBe diode junction temperature, T
XBe heat dissipation channel RP temperature, its heat dissipation channel RP temperature can be measured diode heat radiation shell, substrate, heat sink or some temperature of environment on every side etc., P
jBe the dissipated power that causes that the measured diode junction temperature raises.General thermo-resistance measurement technology is at present:
I, confirm temperature sensitive parameter: keeping measuring current I
MUnder the identical situation, measure the forward bias voltage under the different junction temperatures twice, obtain temperature sensitive parameter
II, measure the variations injunction temperature amount: keeping under the condition temperature-resistant with reference to environment, use with step I in identical measuring current I
MConducting diode records the voltage V of this moment
1, switch to heating current I then
H, record the heating voltage V under the balance
H, switch back to measuring current I more rapidly
M, record voltage V
3Can obtain the variation of junction temperature according to the variation of temperature sensitive parameter K that calculates among the step I and forward voltage: Δ T
j=Δ V
F* K, wherein, Δ V
F=V
1-V
3
III, diode dissipated power: the dissipated power P that causes the diode junction temperature rise
j=P
H=I
H* V
H, for light emitting diode, its luminous power P
LCan obtain through the measurement of photometric measurement unit, obtain causing the dissipated power P of diode junction temperature rise
j=I
H* V
H-P
L
IV, calculating thermal resistance:
Can obtain thermal resistance value.
For above-mentioned measuring technique; In the accounting temperature sensitive parameter; The variation of supposing diode forward bias voltage and junction temperature is linear, but different diode in the reality, because apparatus and process and manufacture process is different; All there are very big instability in its forward voltage and junction temperature in change procedure, its linear hypothesis needs checking; In addition, in test process, the hypothetical reference environment temperature remains unchanged always, and in the actual measurement process, because the diode heating dissipates, the environment temperature of its annex is had certain influence; In addition, for preventing the cooling of diode junction temperature, compole is short when requiring current switching in the current switching process, generally between the number microsecond, measuring equipment is had higher requirement, and has very big instability, and repdocutbility is undesirable, and measuring accuracy is not accurate enough.
[utility model content]
For solving the problems of the prior art, the utility model aims to provide a kind of simple, quick, stable better, higher diode heat resistance measurement mechanism of precision.
The described a kind of diode heat resistance measurement mechanism of the utility model; Comprise attemperating unit, test platform, current source, voltage collecting device and control module; It is characterized in that; The environment temperature and the heat dissipation channel RP temperature of described attemperating unit control measured diode; Described test platform is placed in the attemperating unit, and measured diode well contacts with test platform, and is electrically connected with the voltage collecting device of the current source that is continuously applied steady current to measured diode, measurement measured diode voltage; Described attemperating unit, current source, voltage collecting device all are electrically connected with the control module that in test process, changes diode environment temperature or heat dissipation channel RP temperature and obtain the diode voltage synchronously.
In measuring process, control module control attemperating unit controls to T with the temperature of test platform and measured diode
1Value; After reaching thermal equilibrium, control module Control current source applies the electric current that amplitude is Ip for measured diode fast, simultaneously when the junction temperature rising of measured diode can be ignored; Control module control voltage collecting device is measured the amplitude of the voltage that the measured diode two ends are produced fast, is designated as V
F1Control module Control current source is continuously applied the DC current that size of current is Ip to measured diode; Changing test platform and residing environment temperature of measured diode or measured diode heat radiation shell temperature through attemperating unit, is V until measured diode voltage under thermal equilibrium condition
F1Value, and note this moment the residing environment temperature of measured diode or heat radiation shell temperature be T
2Control module is according to T
1, T
2Temperature value and the input electric power that causes that the measured diode junction temperature raises, calculate the thermal resistance of measured diode.
Above-mentioned diode heat resistance measurement mechanism has drawn under electric current I p through voltage collecting device diode two ends collection simultaneously and rapidly voltage, and the measured diode voltage is V
F1Value, corresponding PN junction temperature is T
1Through the monitoring of control module, when measured diode PN junction voltage reaches V once more to voltage
F1During value, according to the corresponding relation of diode PN junction temperature and PN junction voltage, drawing measured diode PN junction temperature is T
1Value records environment or the heat dissipation channel RP temperature T of this moment
2, just can directly obtain measured diode PN junction and the temperature gap of environment (external environment or a certain RP of measured diode heat dissipation channel) under the stable condition.The diode heat resistance measurement mechanism of the utility model from the definition of diode heat resistance, through the temperature gap of direct measuring diode PN junction and environment, has not only been simplified measuring process and equipment, and the result who measures is accurate.
Said electric current I p can be the electric current of fast rise along constant output then; Also can be pulse current with certain dutycycle, as, pulse length is 0.5～5 μ s, dutycycle is 1 ‰.The former can monitor the forward voltage and the optical parametric of measured diode more easily, and the latter can guarantee not produce from heating (or junction temperature rises and can ignore) in measured diode.But either way require when applying electric current, the junction temperature of measured diode raises and measures the measured diode voltage fast in the negligible time.
The size of said electric current I p is decided according to the rated current size of measured diode; Like this in measuring process; Need not to change again the size of electric current, reduced the error that current transformation causes in the measuring process, and for different diodes; Corresponding electric current I p can be set voluntarily, can satisfy the requirement of different occasions.
Above-mentioned a kind of diode heat resistance measurement mechanism; Said test platform can be the diode anchor clamps that have heat sink and positive and negative pin; Being used for fixing diode and distribute heat, also can be the silicone oil groove of placing diode, is convenient to change and control diode PN junction temperature.
Above-mentioned a kind of diode heat resistance measurement mechanism, said attemperating unit comprises heating/refrigeration unit and temperature monitor, in measuring process, control module heats according to the diode voltage value control heating/refrigeration unit of measuring or freezes; Residing environment temperature of temperature monitor at-once monitor measured diode or measured diode heat dissipation channel RP temperature, temperature monitor are provided with the multichannel temperature probe, can survey the temperature of different RPs as required, for example the T of said measurement
2Value can be the temperature of measured diode heat radiation shell, the heat sink or a certain RP of diode package shell.Set up the space temperature field of a measured diode heat radiation through the temperature of measuring different RPs; Just obtain the temperature gap of measured diode PN junction and different RPs in the heat radiation process, thereby the main thermal resistance that can analyze measured diode constitutes and the package thermal characteristic of diode component.
Above-mentioned a kind of diode heat resistance measurement mechanism; Voltage collecting device is provided with external trigger port and sampling unit simultaneously and rapidly; Said external trigger port receives the synchronous triggering signal that control module sends and starts measurement, and sampling unit is gathered measured diode voltage data fast and fed back to the control module of the analyzing and processing of accomplishing voltage data simultaneously and rapidly.In measured diode being applied fast the electric current process that amplitude is Ip; Gather measured diode voltage waveform over time simultaneously and rapidly; Control module effectively amplifies measured diode voltage waveform, confirms V according near the Wave data analysis voltage peak after amplifying
F1Value, the voltage oscillogram of wherein gathering is shown in real time that by display system said display system can be that computer display also can be an oscillograph.
Accurately measuring the pairing diode voltage of electric current I p is the difficult point of measuring, and the too short then electric current of Measuring Time does not also reach the Ip value, and Measuring Time is long, and measured diode can produce from heating and cause that junction temperature raises, and either way can cause measured value less than normal.The measurement mechanism of the utility model adopts the mode of sampling simultaneously and rapidly to measure the voltage value of measured diode in start-up course, and through the amplification analysis to voltage waveform, can obtain the voltage V corresponding with electric current I p directly, exactly
F1Value.
Above-mentioned a kind of diode heat resistance measurement mechanism; Sampling unit is in applying the electric current process that amplitude is Ip fast to measured diode simultaneously and rapidly; Voltage collecting device is acquisition stream electric current and the measured diode voltage waveform over time of crossing measured diode simultaneously and rapidly; According to waveform, analyze measured diode and in applying the electric current process fast, reach Ip value pairing measured diode voltage constantly first, remember that this voltage is V
F1Value.
In the process that applies electric current I p fast, because may there be phenomenons such as overshoot, ring in the electric current that applies, the voltage waveform that produces when applying electric current according to the current waveform of gathering compares analysis, can accurately obtain the voltage V corresponding with electric current I p
F1Value.Therefore, take above-mentioned amplification analytic approach or method of comparative analysis all can obtain measured diode voltage V
F1Exact value.
Above-mentioned a kind of diode heat resistance measurement mechanism; When measured diode is light emitting diode; Measurement mechanism also comprises the photometric measurement unit of the luminous power of collecting light emitting diode, and said photometric measurement unit comprises integrating sphere and photometer, and the daylighting window of integrating sphere wall is collected the optical signalling of light emitting diode; The detection window of integrating sphere side is connected with photometer; Photometer in the photometric measurement unit is electrically connected with control module, and photometer is with the light signal feedback control unit that collects, and control module is accomplished the analyzing and processing of data and shown lumination of light emitting diode power by display system.
Above-mentioned a kind of diode heat resistance measurement mechanism, the described input electric power that causes that the measured diode junction temperature raises is DC current Ip and the measured diode voltage V that applies
F1Product, i.e. P
j=I
P* V
F1For light emitting diode, described input electric power is direct current Ip and measured diode voltage V
F1Product deduct the luminous power of light emitting diode, i.e. P
j=I
P* V
F1-P
L, wherein, P
LLuminous power for light emitting diode.
Use the diode heat resistance measurement mechanism of above-mentioned connection, the method for measuring the measured diode thermal resistance is:
A) in given temperature T
1Under the condition, let the abundant thermal equilibrium of measured diode, be in given temperature T until the temperature of the PN junction of measured diode
1, measured diode is applied the electric current that amplitude is Ip fast, the amplitude of the voltage that quick measurement measured diode two ends are produced when the junction temperature rising of measured diode can be ignored is designated as V
F1
B) let the measured diode be to work under the dc condition of Ip in size of current, change the residing environment temperature of measured diode or measured diode heat dissipation channel RP temperature is V until measured diode voltage under thermal equilibrium condition through attemperating unit
F1Value, and note this moment the residing environment temperature of measured diode or heat dissipation channel RP temperature be T
2
C) according to T
1, T
2Temperature value and the input electric power that causes that the measured diode junction temperature raises, calculate the thermal resistance of measured diode.
Use the diode heat resistance measurement mechanism of above-mentioned connection, can also realize the accurate measurement of measured diode junction temperature, its technical scheme is:
1) temperature of adjusting attemperating unit; Be arranged under the known higher temperature; Let the abundant thermal equilibrium of measured diode; PN junction temperature until measured diode is in given temperature, and control module Control current source applies the electric current that amplitude is Ip fast to measured diode, and (Ip is a measured diode rated power) voltage collecting device simultaneously measured the magnitude of voltage that the measured diode two ends are produced fast when the junction temperature rising of measured diode can be ignored.
2) temperature of adjusting attemperating unit changes the temperature of setting (it is less that the amplitude of its change should differ) successively, and repeating step 1 then), draw corresponding voltage value under the different temperature.Different temperature to set is a horizontal ordinate, is ordinate with the voltage of correspondence, draws the temperature voltage curve, can obtain the corresponding curved line relation of accurate and detailed temperature and voltage.So long as the diode of same type has identical rated current, corresponding curved line relation just can be used.
The measurement mechanism of the diode heat resistance of the utility model from the thermal resistance definition, utilizes the corresponding relation of the gentle voltage of diode junction, directly, accurately obtains measured diode junction temperature and environment temperature (or tested diode heat dissipation channel RP temperature).The measurement mechanism of the utility model need not the accounting temperature sensitive parameter; The junction temperature and the non-linear error of bringing of forward voltage of different diodes have been eliminated; And in the middle of measuring, need not the switching of measuring current and heating current, both simplified program and the equipment measured, also improved the precision of measuring.The measurement mechanism of the diode heat resistance of the utility model, it measures fast simple, and is easy to operate, and stability is better, and precision is higher.
[description of drawings]
Fig. 1 forms structure for the encapsulation diode is inner and heat is transmitted synoptic diagram
Fig. 2 is the measurement mechanism figure of the embodiment 1 of the utility model
Fig. 3 is electric current, voltage waveform comparative analysis figure
Fig. 4 is the measurement mechanism figure of the embodiment 2 of the utility model
[embodiment]
Embodiment 1
Through accompanying drawing 3 and embodiment, the utility model is done further to describe below.
As shown in Figure 3; A kind of diode heat resistance measurement mechanism; Comprise attemperating unit 1, test platform 2, current source 3, voltage collecting device 4, control module 5, test platform 2 is placed in the attemperating unit 1, and measured diode 6 well contacts with test platform 2; And be electrically connected with current source 3, voltage collecting device 4, attemperating unit 1, current source 3, voltage collecting device 4 all are electrically connected with control module 5.
The described measured diode of present embodiment is general-purpose diode (not luminous), adopts the measurement mechanism of the utility model that measured diode is measured, and its measuring process is following:
A) control module 5 control attemperating units 1 control to given temperature T with the temperature of test platform 2 and measured diode 6
1Value; After reaching thermal equilibrium; Control module 5 Control current sources 3 apply the electric current that amplitude is Ip for measured diode 6 fast, and Ip is made as the rated power of measured diode 6, simultaneously when the junction temperature rising of measured diode 6 can be ignored; Control module 5 control voltage collecting devices 4 are measured the magnitude of voltage that measured diode 6 two ends are produced fast, are designated as V
F1
Electric current that flows through measured diode 6 that voltage collecting device 4 will collect and measured diode 6 voltage data feed back to control module 5; Control module 5 is accomplished the analytical calculation of electric current, voltage data synchronously and is formed electric current, voltage oscillogram, confirms V according to the comparative analysis of electric current and voltage oscillogram
F1Value.With reference to figure 4.
B) control module 5 Control current sources 3 are continuously applied the DC current that size of current is Ip for measured diode 6; Changing test platform 2 and measured diode 6 residing environment temperatures or measured diode 6 heat dissipation channel RP temperature through attemperating unit 1, is V until measured diode 6 voltage under thermal equilibrium condition
F1Value, and note this moment measured diode 6 residing environment temperatures or heat dissipation channel RP temperature be T
2
Said heat dissipation channel RP temperature T
2Value can be the temperature of measured diode 6 heat radiation shells, the heat sink or a certain RP of diode package shell.
C) be T in environment temperature
2The time, measured diode 6 is that the junction temperature of working under the dc condition of Ip is T in size of current
1, control module 5 is according to T
1, T
2Difference and the input electric power that causes that measured diode 6 junction temperatures raise, calculate the thermal resistance of measured diode 6, show the thermal resistance value of measuring by display system.Wherein, cause that the input electric power that measured diode 6 junction temperatures raise is direct current Ip and measured diode 6 voltage V
F1Product, i.e. P
j=I
P* V
F1
As shown in Figure 5, the described measured diode of present embodiment is a light emitting diode.The light-emitting diode heat resistance measurement mechanism of present embodiment is similar with embodiment 1, but because there is luminous power in light emitting diode, calculating causes that the electric power of diode junction temperature rise and embodiment 1 distinguish to some extent.In the diode heat resistance measurement mechanism, except that comprising described in the instance 1 device, also comprise photometric measurement unit 9, photometric measurement unit 9 is electrically connected with control module 5, is used to measure lumination of light emitting diode power.
Adopt the measurement mechanism of the utility model that measured diode is measured, its measuring process is following:
A) control module 5 control attemperating units 1 control to T with the temperature of test platform 2 and measured diode 6
1Value; After reaching thermal equilibrium; Control module 5 Control current sources 3 apply the electric current that amplitude is Ip for measured diode 6 fast, and Ip is made as the rated power of measured diode 6, simultaneously when the junction temperature rising of measured diode 6 can be ignored; The amplitude of the voltage that control module 5 control voltage collecting devices 4 quick collection measured diode 6 two ends are produced is designated as V
F1
Electric current that flows through measured diode 6 that voltage collecting device 4 will collect and measured diode 6 voltage data feed back to control module 5; Control module 5 is accomplished the analytical calculation of electric current, voltage data synchronously and is formed electric current, voltage oscillogram, confirms V according to the comparative analysis of electric current and voltage oscillogram
F1Value.
B) control module 5 Control current sources 3 are continuously applied the DC current that size of current is Ip for measured diode 6; Changing test platform 2 and measured diode 6 residing environment temperatures or measured diode 6 heat dissipation channel RP temperature through attemperating unit 1, is V until measured diode 6 voltage under thermal equilibrium condition
F1Value, and note this moment measured diode 6 residing environment temperatures or heat dissipation channel RP temperature be T
2
Said heat dissipation channel RP temperature T
2Value can be the temperature of measured diode 6 heat radiation shells, the heat sink or a certain RP of diode package shell.
C) be T in environment temperature
2The time, measured diode 6 is that the junction temperature of working under the dc condition of Ip is T in size of current
1, control module 5 is according to T
1, T
2Difference and the input electric power that causes that measured diode 6 junction temperatures raise, calculate the thermal resistance of measured diode 6.Wherein, cause that the input electric power that measured diode 6 junction temperatures raise is direct current Ip and measured diode 6 voltage V
F1Product deduct the luminous power of light emitting diode, i.e. P
j=I
P* V
F1-P
L, wherein, P
LLuminous power for light emitting diode.
The luminous power computing method of light emitting diode are: after treating the light emitting diode working stability; Integrating sphere 10 in the photometric measurement unit 9 is gathered the optical signalling that light emitting diode sends; Photometer 11 in the photometric measurement unit 9 is with the light signal feedback control unit 5 that detects; Control module 5 is accomplished the analyzing and processing of data, shows lumination of light emitting diode power by display system.
The described a kind of diode heat resistance measurement mechanism of the foregoing description; Measure the measured diode thermal resistance directly, exactly through temperature control technique and synchronous sampling mode; And can analyze measured diode thermal resistance formation and diode package heat dissipation characteristics, its measuring process is simple, and is easy to operate; Stability is better, and precision is higher.
What need state at last is: except that the foregoing description; The utility model can also have other embodiments; Those skilled in the art can make amendment or is equal to replacement the utility model, but revises the back or be equal to the technological protection domain of the utility model requirement that all drops on of replacement.
Claims (5)
1. diode heat resistance measurement mechanism; Comprise attemperating unit (1), test platform (2), current source (3), voltage collecting device (4), control module (5); It is characterized in that; The environment temperature and the heat dissipation channel RP temperature of described attemperating unit (1) control measured diode (6); Described test platform (2) is placed in the attemperating unit (1), and measured diode (6) well contacts with test platform (2), and is electrically connected with the voltage collecting device (4) of the current source (3) of being continuously applied electric current for measured diode (6), measurement measured diode (6) voltage; Described attemperating unit (1), current source (3), voltage collecting device (4) all are electrically connected with the control module (5) that in test process, changes diode (6) environment temperature or heat dissipation channel RP temperature and obtain diode (6) voltage synchronously.
2. a kind of diode heat resistance measurement mechanism as claimed in claim 1; It is characterized in that said attemperating unit (1) is included in that control module (5) heats according to measured diode (6) voltage value control heating/refrigeration unit (7) or the heating/refrigeration unit (7) that freezes and the temperature monitor (8) of residing environment temperature of at-once monitor measured diode (6) or measured diode (6) heat dissipation channel RP temperature.
3. a kind of diode heat resistance measurement mechanism as claimed in claim 1; It is characterized in that said voltage collecting device (4) is provided with and receives the external trigger port and the quick sampling unit simultaneously and rapidly of gathering measured diode (6) voltage data and feeding back to the control module (5) of the analyzing and processing of accomplishing voltage data that outer triggering signal starts measurement.
4. a kind of diode heat resistance measurement mechanism as claimed in claim 1 is characterized in that, also comprises the photometric measurement unit (9) of the luminous power of collecting measured diode (6), and photometric measurement unit (9) are electrically connected with control module (5).
5. a kind of diode heat resistance measurement mechanism as claimed in claim 4; It is characterized in that; Said photometric measurement unit (9) comprises integrating sphere (10) and photometer (11); The daylighting window that is positioned at integrating sphere (10) wall is collected the optical signalling of measured diode (6), and the detection window of integrating sphere (10) side is connected with photometer (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020683091 CN202119874U (en) | 2010-12-21 | 2010-12-21 | Measure apparatus of diode thermal resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020683091 CN202119874U (en) | 2010-12-21 | 2010-12-21 | Measure apparatus of diode thermal resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202119874U true CN202119874U (en) | 2012-01-18 |
Family
ID=45460928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020683091 Expired - Lifetime CN202119874U (en) | 2010-12-21 | 2010-12-21 | Measure apparatus of diode thermal resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202119874U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608511A (en) * | 2012-03-08 | 2012-07-25 | 东南大学 | Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube |
| CN103499782A (en) * | 2013-08-21 | 2014-01-08 | 深圳市晶导电子有限公司 | Method for measuring vertical double-diffusion MOSFET |
| CN104950009A (en) * | 2014-03-28 | 2015-09-30 | 杭州远方光电信息股份有限公司 | Thermal resistance analysis method |
| CN108242884A (en) * | 2016-12-23 | 2018-07-03 | 北京天诚同创电气有限公司 | Photovoltaic inverter system grid-connected single channel MPPT and its short-circuit protection method |
| CN116203377A (en) * | 2023-03-28 | 2023-06-02 | 天合光能股份有限公司 | Junction temperature testing device and junction temperature testing method |
-
2010
- 2010-12-21 CN CN 201020683091 patent/CN202119874U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608511A (en) * | 2012-03-08 | 2012-07-25 | 东南大学 | Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube |
| CN102608511B (en) * | 2012-03-08 | 2014-12-10 | 东南大学 | Method for measuring junction temperature and thermal resistance of metal-oxide semiconductor tube |
| CN103499782A (en) * | 2013-08-21 | 2014-01-08 | 深圳市晶导电子有限公司 | Method for measuring vertical double-diffusion MOSFET |
| CN103499782B (en) * | 2013-08-21 | 2017-02-22 | 深圳市晶导电子有限公司 | Method for measuring vertical double-diffusion MOSFET |
| CN104950009A (en) * | 2014-03-28 | 2015-09-30 | 杭州远方光电信息股份有限公司 | Thermal resistance analysis method |
| CN104950009B (en) * | 2014-03-28 | 2018-11-20 | 杭州远方光电信息股份有限公司 | A kind of thermal resistance analysis method |
| CN108242884A (en) * | 2016-12-23 | 2018-07-03 | 北京天诚同创电气有限公司 | Photovoltaic inverter system grid-connected single channel MPPT and its short-circuit protection method |
| CN108242884B (en) * | 2016-12-23 | 2020-03-10 | 北京天诚同创电气有限公司 | Photovoltaic inverter system for one-way MPPT grid connection and short-circuit protection method thereof |
| CN116203377A (en) * | 2023-03-28 | 2023-06-02 | 天合光能股份有限公司 | Junction temperature testing device and junction temperature testing method |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120118 |