CN203069740U - Thermal resistance test apparatus for semiconductor power device - Google Patents
Thermal resistance test apparatus for semiconductor power device Download PDFInfo
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- CN203069740U CN203069740U CN 201220748540 CN201220748540U CN203069740U CN 203069740 U CN203069740 U CN 203069740U CN 201220748540 CN201220748540 CN 201220748540 CN 201220748540 U CN201220748540 U CN 201220748540U CN 203069740 U CN203069740 U CN 203069740U
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Abstract
The utility model relates to a thermal resistance test apparatus for a semiconductor power device. The test apparatus comprises a test machine, and a temperature control box and a static air box which are connected with the test machine, wherein a temperature control device and a first connector are arranged in the temperature control box, and a first temperature probe, a second temperature probe and a second connector are arranged in the static air box; and the test machine comprises a microprocessor, and a voltage test module, a constant power output module, a drive power module and a temperature acquisition module which are connected with the microprocessor, and the microprocessor is also connected with the temperature control device. According to the thermal resistance test apparatus provided by the utility model, the temperature probes with relatively cost are used to detect the temperature, preventing detection inaccuracy caused by different temperature rise of packaging material, and constant power is applied during the process of heating a device to be tested, so that the test cost is reduced, and the precision of a thermal resistance test is further ensured. The apparatus has the advantages of wide measurement coverage, high measurement precision, simpliness in test and low cost.
Description
Technical field
The utility model relates to the semiconductor power device field of measuring technique, relates in particular to a kind of semiconductor power device thermo-resistance measurement device.
Background technology
Often junction temperature is too high to cause it to damage to semiconductor power device because heating makes in the course of the work, therefore is necessary very much to control semiconductor power device junction temperature in the course of the work, and junction temperature can draw by thermal resistance and the reckoning of shell temperature of semiconductor power device.The design of thermo-resistance measurement instrument in the prior art, be in order to estimate the thermal resistance of semiconductor power device objectively on the one hand, appropriate design PCB and heat dissipation element make semiconductor power device junction temperature in the course of the work be no more than the safety zone, ensure that the safety of semiconductor power device is normally moved; On the other hand, can assess influences all of semiconductor power device heat dispersion parameters, and analyzing semiconductor power device packaging technology difference is made the encapsulation aspect and improved, and helps to improve the heat dispersion of semiconductor power device; Simultaneously also can be used for verifying package reliability, the concrete reason of analyzing semiconductor power device cause thermal damage is made reliability and is improved.
The thermal resistance of general test diode of existing thermo-resistance measurement instrument places constant temperature structure in when test with diode, and applies certain heating current in test process inner junction temperature is risen, and according to junction temperature rising difference, estimates the thermal resistance of encapsulating material.Above-mentioned test mode exists following 2 deficiencies, the one, adopt constant temperature structure to test, under constant temperature structure, diode loads in the heating current process, the thermal resistance of different encapsulating materials can be variant, surface temperature rises and has difference, and constant temperature structure contacts objective factor existence such as difference in the actual mechanical process with different elements, all can produce certain deviation when making each testing element packaging body surface temperature, thereby the precision of the actual test of influence, simultaneously accurate, to have the fast constant temperature structure cost of closed-loop control, response speed higher.The 2nd, in test process, adopt permanent heating current mode to test, when test, apply identical heating current I, and measure the pressure drop V of temperature-sensitive structure, can calculate power P.And thermal resistance is Rjc=△ T/P, for two similar elements, when the encapsulating material thermal resistance was variant, the internal heat sensing structure was under different temperature rise situations, temperature-sensitive structure forward voltage V there are differences, along with temperature rises gradually, temperature-sensitive structure forward voltage can descend gradually, and the power P that namely applies there are differences, the test of thermal resistance mainly is the laterally difference between the contrast, all there is variation in two factors of △ T and P in computing formula, and can there be deviation in such test findings, influences test accuracy.
Summary of the invention
Technical problem to be solved in the utility model is to have in test process that measuring accuracy is low, cost is high and measure the single the problems referred to above of kind at existing thermo-resistance measurement instrument, provide a kind of measure accurate height, test simple, measure broad covered area and the low semiconductor power device thermo-resistance measurement device of cost.
For addressing the above problem, the technical solution of the utility model is:
A kind of semiconductor power device thermo-resistance measurement device, described proving installation has a test machine and the temperature-controlled cabinet that links to each other with test machine respectively and still air case, be provided with temperature controller in the temperature-controlled cabinet and be used for being connected first connector of device under test, be provided with first temperature probe for detection of still air the temperature inside the box in the still air case, for detection of second temperature probe of device under test shell temperature and be used for second connector of connection device under test; Described test machine comprise for control and handle to detect data and according to the microprocessor that detects the data computation thermal resistance and the voltage test module for detection of device under test forward conduction voltage and output measuring current that links to each other with microprocessor respectively, be used for the output heating current and detect device under test voltage permanent power output module, be used for driving power module and the temperature collect module of driving device under test, microprocessor also links to each other with temperature controller; The measuring current output terminal of voltage test module links to each other with second connector with first connector respectively with the voltage detecting end, voltage test module output measuring current is on first connector or second connector, and detection is connected the forward conduction voltage of device under test on first connector or second connector, the heating current output terminal of permanent power output module links to each other with second connector, permanent power output module output heating current is to second connector, and detection is connected the voltage of device under test on second connector, driving power module output terminal links to each other with second connector, the driving power module is used for driving device under test, the temperature input end of temperature collect module links to each other with second temperature probe with first temperature probe respectively, temperature collect module receives the temperature signal of first temperature probe and second temperature probe, and temperature signal is transferred to microprocessor.
Wherein, temperature-controlled cabinet adopts baking oven, is used for the temperature of control device under test environment of living in, makes the numerical value that calculates thermal sensitive parameter.During detection, under different temperatures, use little electric current to test the forward conduction voltage of device under test in baking oven, the pass that obtains voltage and temperature by many groups of detection numerical value is linear relationship, and calculates the thermal sensitive parameter in each temperature section.The still air case is used for still air is provided, and prevents that device under test surrounding air from flowing, and reduces the interference that air ambient transfer pair thermo-resistance measurement produces, and the still air case is as the environment of device under test in heating process.
Test machine is mainly used in: when detecting thermal sensitive parameter, the control voltage test module provides a little electric current for the temperature-sensitive structure of device under test, note the forward conduction voltage of temperature-sensitive structure, secondly, apply driving power for the device under test that needs driving to open by control driving power module and make its unlatching; Applying a continuous big current signal to device under test then heats up device under test, microprocessor is according to predefined performance number in this process, by permanent power output module output heating current, and the test value of collection output voltage, thereby adjust the size of output heating current, keep device under test is applied constant power; Moment is measured voltage after the heating of temperature-sensitive structure with a continuous measuring current in heating process, after device under test reaches thermal equilibrium, at this moment, according to the thermal sensitive parameter of testing in advance, the voltage of thermal sensitive parameter and temperature relation are the better linearity relations, thereby calculate the junction temperature of device under test, according to the real time temperature data of first temperature probe and the detection of second temperature probe, calculate the thermal resistance of device under test.
Be compared to prior art, semiconductor power device thermo-resistance measurement device of the present utility model is applicable to the test of variety classes semiconductor power device, and the measurement broad covered area has and measures accurately height, test simply and the low characteristics of cost.The power invariability that the utility model adopts permanent power output module to guarantee to adopt the device under test of different encapsulating materials to apply in heating process, making power and variable of the prior art is fixed value, avoided in the thermo-resistance measurement process difference because of the device under test magnitude of voltage of difference encapsulation, cause the heating power difference under the same current, guaranteed the accuracy of test; The utility model adopts lower-cost temperature probe to carry out temperature detection on the other hand, has avoided causing the inaccurate of detection because of the difference of encapsulating material temperature rise, has both reduced testing cost, has further guaranteed the degree of accuracy of thermo-resistance measurement again.
Preferably, described permanent power output module comprises the bias voltage output unit, power amplification unit, sampling resistor, current sampling unit, the voltage sample unit, hardware multiplier and analog to digital converter, microprocessor, the bias voltage output unit, power amplification unit, sampling resistor links to each other in turn with second connector, the bias voltage output unit receives the signal that microprocessor sends, bias voltage output unit output offset voltage signal is in power amplification unit, the amplifying signal of power amplification unit output is input in the sampling resistor, and second connector receives the heating current of sampling resistor output; Current sampling unit respectively with sampling resistor, analog to digital converter links to each other with hardware multiplier, current sampling unit is gathered the heating current of sampling resistor output, the current acquisition information of analog to digital converter and the output of hardware multiplier received current sampling unit, the voltage sample unit respectively with second connector, analog to digital converter links to each other with hardware multiplier, the voltage sample unit receives the voltage that is connected device under test in second connector, analog to digital converter and hardware multiplier receive the information of voltage of voltage sample unit output, hardware multiplier links to each other with power amplification unit, power amplification unit receives the feedback information of hardware multiplier output, analog to digital converter links to each other with microprocessor, and the numerical information after the analog to digital converter output conversion is in microprocessor.
Under the control of microprocessor, the heating current of permanent power output module output, this heating current is used for the temperature-sensitive structure of heating device under test, and the voltage of sampling heating current and temperature-sensitive structure, calculate the power that is applied on the hot device under test by hardware multiplier, because the temperature-sensitive structure voltage there are differences, for guaranteeing permanent power heating, hardware multiplier output value of feedback is in power amplification unit, make feedback reach balance, permanent power output module is adjusted output heating current size in real time, keeps the moving rate of output constant.
Preferably, described test machine comprises that also be used to the display terminal that shows test results and carry out man-machine exchange, display terminal links to each other with microprocessor.The data message that produces in test process is sent to display terminal by microprocessor, and shows at display terminal, and the user also can pass through the display terminal input control information, the control whole test process.
Preferably, described device under test is field effect transistor, insulated gate bipolar transistor, bipolar transistor or diode.The driving power module is applied driving power for the device under test that needs driving to open and makes its unlatching, just need to drive to open as field effect transistor MOSFET, insulated gate bipolar transistor IGBT and bipolar transistor, the test of diode heat resistance then need not to adopt driving power.
Description of drawings
Fig. 1 is the schematic block circuit diagram of the utility model semiconductor power device thermo-resistance measurement device.
Fig. 2 is the schematic block circuit diagram of permanent power output module in the utility model semiconductor power device thermo-resistance measurement device.
Embodiment
Further describe the utility model below in conjunction with drawings and Examples, but protection domain of the present utility model is not limited to this.
With reference to Fig. 1, semiconductor power device thermo-resistance measurement device of the present utility model comprises test machine, temperature-controlled cabinet and still air case, and temperature-controlled cabinet links to each other with test machine with the still air case.Be provided with temperature controller in the temperature-controlled cabinet and be used for being connected first connector of device under test, be provided with first temperature probe for detection of still air the temperature inside the box in the still air case, for detection of second temperature probe of device under test shell temperature and be used for second connector of connection device under test.Described test machine comprises microprocessor and the voltage test module that links to each other with microprocessor respectively, permanent power output module, driving power module, temperature collect module and display terminal.Microprocessor is used for control and handles detecting data and according to detecting the data computation thermal resistance, voltage test module is for detection of device under test forward conduction voltage and output measuring current, permanent power output module is used for the output heating current and detects device under test voltage, the driving power module is used for driving device under test, temperature collect module is used for transmitting the temperature of first temperature probe and the collection of second temperature probe, microprocessor also links to each other with temperature controller, the temperature that is used for the control temperature controller, temperature controller is baking oven, display terminal is used for showing test results and carrying out man-machine exchange, the data message that produces in test process is sent to display terminal by microprocessor, and show at display terminal, the user also can pass through the display terminal input control information, the control whole test process.
First connector is used for being connected device under test with second connector, the measuring current output terminal of voltage test module and voltage detecting end link to each other with second connector with first connector respectively, voltage test module output measuring current is on first connector or second connector, and detection is connected the forward conduction voltage of device under test on first connector or second connector.The heating current output terminal of permanent power output module links to each other with second connector, and permanent power output module output heating current is to second connector, and detection is connected the voltage of device under test on second connector.Driving power module output terminal links to each other with second connector, the driving power module is used for driving device under test, the temperature input end of temperature collect module links to each other with second temperature probe with first temperature probe respectively, temperature collect module receives the temperature signal of first temperature probe and second temperature probe, and temperature signal is transferred to microprocessor.
With reference to Fig. 2, described permanent power output module comprises the bias voltage output unit, power amplification unit, sampling resistor, current sampling unit, the voltage sample unit, hardware multiplier and analog to digital converter, microprocessor, the bias voltage output unit, power amplification unit, sampling resistor links to each other in turn with second connector, the bias voltage output unit receives the signal that microprocessor sends, bias voltage output unit output offset voltage signal is in power amplification unit, the amplifying signal of power amplification unit output is input in the sampling resistor, and second connector receives the heating current of sampling resistor output; Current sampling unit respectively with sampling resistor, analog to digital converter links to each other with hardware multiplier, current sampling unit is gathered the heating current of sampling resistor output, the current acquisition information of analog to digital converter and the output of hardware multiplier received current sampling unit, the voltage sample unit respectively with second connector, analog to digital converter links to each other with hardware multiplier, the voltage sample unit receives the voltage that is connected device under test in second connector, analog to digital converter and hardware multiplier receive the information of voltage of voltage sample unit output, hardware multiplier links to each other with power amplification unit, power amplification unit receives the feedback information of hardware multiplier output, analog to digital converter links to each other with microprocessor, and the numerical information after the analog to digital converter output conversion is in microprocessor.
When utilizing proving installation of the present utility model to detect, comprise following concrete steps:
Step a: carry out the detection of device under test thermal sensitive parameter K value by microprocessor, voltage test module and temperature-controlled cabinet.Device to be detected is placed in the temperature-controlled cabinet, and be connected on first connector, by the temperature in the temperature controller control temperature-controlled cabinet, it is that T1, T2 and T3 are example that microprocessor arranges probe temperature, in order to ensure test accuracy, can set the several temperature point, method of interpolation is adopted in test more, obtains the thermal sensitive parameter K value of device under test correspondence in the different temperatures section.Microprocessor output RS485 number bus control signal, and this signal is input in the temperature controller, temperature controller is realized the inner heating of temperature-controlled cabinet according to the information of this digital signal, reach design temperature after, and it is constant to maintain this temperature value.Temperature in the temperature-controlled cabinet is heated to T1, at this moment, microprocessor output digital signal is to voltage test module, voltage test module is deciphered this digital signal, the measuring current Is that voltage test module output is less, and be input on the temperature-sensitive structure of device under test, detecting the forward conduction voltage V1 of this temperature-sensitive structure simultaneously, voltage test module aligns and is sent to the storage of microprocessor record after capable analog to digital conversion is compressed in the guide energising.After finishing the test of T1 temperature spot, temperature is heated to T2 in the microprocessor control temperature-controlled cabinet, utilize said method to detect the forward conduction voltage V2 of device under test temperature-sensitive structure under the T2 temperature, continue to test the forward conduction voltage V3 of device under test temperature-sensitive structure under the T3 temperature.
Before the measurement of thermal sensitive parameter K value, at first to select suitable measuring current IS, its value can not be greatly to chip is obviously generated heat, simultaneously can not be little to can't conducting and introduce the leakage current error, by quick repeated test, if forward conduction voltage VF does not have drift, represent that then measuring current value IS overcomes influence of leakage current, if forward conduction voltage VF does not occur continuing to descend, represent that then the heating of device under test can be ignored, further guarantee the accuracy that detects.
Step b: by the value of microprocessor according to T1, T2, T3, V1, V2 and V3, simulate the value of thermal sensitive parameter K in the different temperatures scope with method of interpolation, based on the temperature-sensitive architectural characteristic, generally this thermal sensitive parameter K is close to linear value.Can draw the linear relationship of temperature-sensitive structure temperature and forward conduction voltage V by this test process, just can extrapolate the junction temperature of device under test temperature-sensitive structure this moment.
Because device under test internal heat sensing structure temperature and forward voltage relation approach linear, K value in the different temperatures section is similar to comparatively approaching, adopt method of interpolation, more precision be described in temperature value corresponding in certain section voltage range, table one is that the K Value Data of five kinds of device under tests in the different temperatures section is example:
Table one, the K Value Data of five kinds of device under tests in the different temperatures section
| Temperature value: | Device 1 (K value) | Device 2 | Device 3 | Device 4 | Device 5 |
| 40℃-60℃ | -2.00mv/℃ | -2.15mv/℃ | -1.85mv/℃ | -1.67mv/℃ | -1.55mv/℃ |
| 60℃-80℃ | -2.22mv/℃ | -2.29mv/℃ | -1.75mv/℃ | -1.50mv/℃ | -1.64mv/℃ |
| 80℃-100℃ | -2.30mv/℃ | -2.46mv/℃ | -1.95mv/℃ | -1.65mv/℃ | -1.43mv/℃ |
Can find out that from table one in a temperature section scope, device under test internal heat sensing structure temperature and forward voltage relation approach linear.
Step c: by device under test temperature-sensitive structure forward conduction voltage and the linear temperature-sensitive structure junction temperature of measuring of junction temperature.By the junction temperature TJ of microprocessor, voltage test module, permanent power output module, driving power module and temperature collect module detection device under test, and according to the thermal resistance Rjc that detects the data computation device under test.Device to be detected is placed in the still air case, and is connected on second connector.Microprocessor output digital signal is to voltage test module, voltage test module is deciphered digital signal, voltage test module output measuring current Is, and be input on the temperature-sensitive structure of device under test, test simultaneously under the normal temperature state, the forward conduction voltage VF1 of this temperature-sensitive structure, voltage test module align and are sent to microprocessor after capable analog to digital conversion is compressed in the guide energising.
Steps d: according to the kind of device under test, if device under test is field effect transistor MOSFET, insulated gate bipolar transistor IGBT and bipolar transistor, by microprocessor according to the predefined voltage of user or current value, the output corresponding digital signals, be input to the driving power module, the driving power module is deciphered digital signal, the output driving power is to the device under test internal control utmost point, between the grid and source electrode as field effect transistor MOSFET, the control device under test enters opening, does not then need the driving power module to participate in the thermo-resistance measurement process if device under test is diode.
Microprocessor output digital signal is to permanent power output module, the bias voltage output unit produces bias voltage in the permanent power output module of this Digital Signals, bias voltage is input to power amplification unit, the power amplification unit output current signal, behind sampling resistor, output on the temperature-sensitive structure of device under test.At this moment, current sampling unit obtains the current signal Ip that flows through sampling resistor, and be input in the hardware multiplier, the magnitude of voltage Vp of device under test temperature-sensitive structure is gathered in the voltage sample unit, and be input in the hardware multiplier, hardware multiplier multiplies each other two input signal values, and the feedback result of output multiplication is to the power amplification unit input end, realize negative feedback amplification balance, it is constant to keep outputing to the outside constant PD=Ip*Vp of being of performance number.And in this process, microprocessor is by obtaining the digital signal of AD conversion unit conversion, primary processor converts corresponding voltage value Vp and current value I p to by the digital signal that gets access to, be presented on the display terminal, check for the user, in permanent power test process, excessive and cause device under test to damage for fear of electric current, the user can set the safety current scope, exceeds the safe range microprocessor and can stop test automatically.
Step f: every the unit interval, repeatedly repeat following test process, reach thermal equilibrium state up to device under test.Moment is eliminated the heating current Ip of permanent power output module output, by microprocessor output digital signal, the forward conduction voltage VF2 of control voltage test module output measuring current Is test heating back device under test, simultaneously, microprocessor output digital signal is to temperature collect module, after this digital signal is deciphered through temperature collect module, respectively the first temperature probe TA and the analog signal conversion of the generation of the inside K type thermopair of the second temperature probe TC are become the digital signal of corresponding temperature value, transfer back in the microprocessor.Each temperature value constantly of second temperature probe TC test device under test surface needs earlier temperature probe is touched the heating position on device under test packaging body surface during this probe when mounted, and applies certain pressure, guarantees the accuracy that shell temperature is tested.
Step g: the forward conduction voltage when detecting temperature-sensitive structure thermal equilibrium state before and after the heating of device under test in the still air case, VF1 deducts VF2, obtain forward voltage drop variable quantity △ VF this moment, calculate the junction temperature of device under test by obtaining device under test temperature-sensitive structure thermal sensitive parameter K value in the temperature-controlled cabinet, and according to the power P D that applies, environment temperature TA, device under test shell temperature TC, in conjunction with semiconductor thermal resistance formula Rjc=(TJ-TC)/PD calculates the thermal resistance Rjc of device under test.
Below by under permanent power mode and the constant current mode, be example explanation the utility model at same batch two same package material diode components, wherein temperature detection adopts temperature probe.
Under the permanent power mode: same batch two same package material diode components are example, carry out five repeated tests.Thermal sensitive parameter K value adopts the conventionally test method, does not repeat them here, and test calculates thermal sensitive parameter K value, adopts the method for interpolation segmentation to calculate.Obtain device 1 and the identical K40-60 of being ℃ of device 2 thermal sensitive parameter K=-2.25mV/ ℃, K60-80 ℃=-2.45mV/ ℃, K80-100 ℃=-2.15mV/ ℃.
Device 1: setting power is that PD is 1.5W, record the preceding temperature-sensitive structure forward conduction voltage VF1=538.566 mV of heating, obtain the shell temperature TC of forward conduction voltage VF2 and device 1 after heating a period of time is stable, the junction temperature TJ by calculating device 1 temperature-sensitive structure and the value of thermal resistance Rjc see the following form two.
Table two, the device 1 detection data under permanent power mode
| TC? | 68.591℃ | 68.297℃ | 68.229℃ | 68.246℃ | 68.287℃ |
| TJ? | 87.614℃ | 87.369℃ | 87.317℃ | 87.327℃ | 87.32℃ |
| Rjc | 12.682℃/W | 12.714℃/W | 12.725℃/W | 12.721℃/W | 12.689℃/W |
| VF2 | 385.181?mV | 385.772?mV | 385.004?mV | 384.974?mV | 384.981?mV |
Device 2: setting power is that PD is 1.5W, record the preceding temperature-sensitive structure forward conduction voltage VF3=549.436 mV of heating, obtain the shell temperature TC of forward conduction voltage VF2 and device 2 after heating a period of time is stable, the junction temperature TJ by calculating device 2 temperature-sensitive structures and the value of thermal resistance Rjc see the following form three.
Table three, the device 2 detection data under permanent power mode
| TC? | 68.892℃ | 68.297℃ | 68.659℃ | 68.876℃ | 68.127℃ |
| TJ? | 87.868℃ | 87.334℃ | 87.678℃ | 87.937℃ | 87.212℃ |
| Rjc | 12.650℃/W | 12.691℃/W | 12.679℃/W | 12.707℃/W | 12.723℃/W |
| VF2 | 394.892?mV | 394.797?mV | 394.769?mV | 394.876?mV | 395.127?mV |
From the detection data of table two as can be known, the thermal resistance mean value Rjc1 of device 1 is 12.706 ℃/W, and from the detection data of table three as can be known, the thermal resistance mean value Rjc2 of device 2 is 12.690 ℃/W.The thermal resistance value that device 1 and device 2 obtain is at every turn compared with mean value, and deviation is less, under same power condition, test, and the thermal resistance value of same package material, the test high conformity, accurately.Simultaneously, adopt the device under test of temperature probe test cheaply shell temperature, through repeated test, the test result consistance is better.
Under constant current mode: same batch two same package material diode components are example, carry out five repeated tests.The setting current value is 3.5A, and after retainer member was stable, power was near the 1.5w under the permanent power mode.
Thermal sensitive parameter K is tried to achieve in test, adopts the method for interpolation segmentation to calculate.Device 1 is identical with device 2 thermal sensitive parameter K be K40-60 ℃=-2.25mV/ ℃, K60-80 ℃=-2.45mV/ ℃, K80-100 ℃=-2.15mV/ ℃.
Device 1: record the preceding temperature-sensitive structure forward voltage drop VF1=538.566 mV of heating, obtain the shell temperature TC of forward conduction voltage VF2 and device 1 after heating a period of time is stable, calculate the junction temperature TJ of device 1 temperature-sensitive structure and the value of thermal resistance Rjc and see the following form four.
Table four, the device 1 detection data under constant current mode
| TC? | 67.546℃ | 68.187℃ | 68.347℃ | 68.324℃ | 68.178℃ |
| TJ? | 86.514℃ | 87.291℃ | 87.397℃ | 87.323℃ | 87.212℃ |
| Rjc | 12.645℃/W | 12.736℃/W | 12.715℃/W | 12.666℃/W | 12.689℃/W |
| VF2 | 383.452?mV | 383.688?mV | 384.014?mV | 383.974?mV | 384.768?mV |
Device 2: record and heat preceding temperature-sensitive structure forward conduction voltage VF3=549.436 mV, obtain the shell temperature TC of forward conduction voltage VF2 and device after heating a period of time is stable, what reach calculating sees the following form five to the junction temperature TJ of device 2 temperature-sensitive structures and the value of thermal resistance Rjc.
Table five, the device 2 detection data under constant current mode
| TC? | 68.892℃ | 68.423℃ | 68.874℃ | 68.443℃ | 69.127℃ |
| TJ? | 89.868℃ | 89.234℃ | 89.578℃ | 89.437℃ | 89.612℃ |
| Rjc | 13.984℃/W | 13.874℃/W | 13.802℃/W | 13.996℃/W | 13.656℃/W |
| VF3 | 381.252?mV | 381.688?mV | 382.014?mV | 380.974?mV | 382.768?mV |
From the detection data of table four as can be known, the thermal resistance mean value Rjc1 of device 1 is 12.687 ℃/W, and from the detection data of table five as can be known, the thermal resistance mean value Rjc2 of device 2 is 13.860 ℃/W.The thermal resistance value that device 1 and device 2 obtain is at every turn compared with mean value, and deviation is bigger, and all there is variation in two factors of △ T and P in computing formula, and can there be deviation in such comparative test result.Under same current condition, test, the thermal resistance value of same package material, can there be deviation in test findings.Can find out from device 1,2 test result, under same current condition, test, difference between the different components of same package material, can influence the accuracy of actual thermal resistance value test, for the thermal resistance of estimating different encapsulating materials, and the contrast experiment of different manufacturers similar chip package cooling, the thermo-resistance measurement device of continuous current mode can produce the test deviation.
In the above-mentioned explanation, all special instructions that do not add all adopt routine techniques means of the prior art.
Claims (4)
1. semiconductor power device thermo-resistance measurement device, it is characterized in that, described proving installation has a test machine and the temperature-controlled cabinet that links to each other with test machine respectively and still air case, be provided with temperature controller in the temperature-controlled cabinet and be used for being connected first connector of device under test, be provided with first temperature probe for detection of still air the temperature inside the box in the still air case, for detection of second temperature probe of device under test shell temperature and be used for second connector of connection device under test;
Described test machine comprise for control and handle to detect data and according to the microprocessor that detects the data computation thermal resistance and the voltage test module for detection of device under test forward conduction voltage and output measuring current that links to each other with microprocessor respectively, be used for the output heating current and detect device under test voltage permanent power output module, be used for driving power module and the temperature collect module of driving device under test, microprocessor also links to each other with temperature controller;
The measuring current output terminal of voltage test module links to each other with second connector with first connector respectively with the voltage detecting end, voltage test module output measuring current is on first connector or second connector, and detection is connected the forward conduction voltage of device under test on first connector or second connector, the heating current output terminal of permanent power output module links to each other with second connector, permanent power output module output heating current is to second connector, and detection is connected the voltage of device under test on second connector, driving power module output terminal links to each other with second connector, the driving power module is used for driving device under test, the temperature input end of temperature collect module links to each other with second temperature probe with first temperature probe respectively, temperature collect module receives the temperature signal of first temperature probe and second temperature probe, and temperature signal is transferred to microprocessor.
2. semiconductor power device thermo-resistance measurement device according to claim 1, it is characterized in that, described permanent power output module comprises the bias voltage output unit, power amplification unit, sampling resistor, current sampling unit, the voltage sample unit, hardware multiplier and analog to digital converter, microprocessor, the bias voltage output unit, power amplification unit, sampling resistor links to each other in turn with second connector, the bias voltage output unit receives the signal that microprocessor sends, bias voltage output unit output offset voltage signal is in power amplification unit, the amplifying signal of power amplification unit output is input in the sampling resistor, and second connector receives the heating current of sampling resistor output; Current sampling unit respectively with sampling resistor, analog to digital converter links to each other with hardware multiplier, current sampling unit is gathered the heating current of sampling resistor output, the current acquisition information of analog to digital converter and the output of hardware multiplier received current sampling unit, the voltage sample unit respectively with second connector, analog to digital converter links to each other with hardware multiplier, the voltage sample unit receives the voltage that is connected device under test in second connector, analog to digital converter and hardware multiplier receive the information of voltage of voltage sample unit output, hardware multiplier links to each other with power amplification unit, power amplification unit receives the feedback information of hardware multiplier output, analog to digital converter links to each other with microprocessor, and the numerical information after the analog to digital converter output conversion is in microprocessor.
3. semiconductor power device thermo-resistance measurement device according to claim 1 is characterized in that, described test machine comprises that also be used to the display terminal that shows test results and carry out man-machine exchange, display terminal links to each other with microprocessor.
4. semiconductor power device thermo-resistance measurement device according to claim 1 is characterized in that, described device under test is field effect transistor, insulated gate bipolar transistor, bipolar transistor or diode.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048606A (en) * | 2012-12-30 | 2013-04-17 | 杭州士兰微电子股份有限公司 | Thermal resistance test device and method of semiconductor power device |
| CN108414909A (en) * | 2018-02-02 | 2018-08-17 | 北京航空航天大学 | A kind of Darlington transistor steady state heat resistance measurement method based on electric method |
| CN109375086A (en) * | 2018-09-09 | 2019-02-22 | 程德明 | Silicon substrate AIGaN-HEMT/MOS power device thermal resistance pressure fall-off test instrument |
| CN111239576A (en) * | 2018-11-29 | 2020-06-05 | 株洲中车时代电气股份有限公司 | Constant power cycle test circuit and method based on power loss linear control |
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2012
- 2012-12-30 CN CN 201220748540 patent/CN203069740U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048606A (en) * | 2012-12-30 | 2013-04-17 | 杭州士兰微电子股份有限公司 | Thermal resistance test device and method of semiconductor power device |
| CN103048606B (en) * | 2012-12-30 | 2015-03-18 | 杭州士兰微电子股份有限公司 | Thermal resistance test device and method of semiconductor power device |
| CN108414909A (en) * | 2018-02-02 | 2018-08-17 | 北京航空航天大学 | A kind of Darlington transistor steady state heat resistance measurement method based on electric method |
| CN108414909B (en) * | 2018-02-02 | 2019-11-29 | 北京航空航天大学 | A kind of Darlington transistor steady state heat resistance measurement method based on electric method |
| CN109375086A (en) * | 2018-09-09 | 2019-02-22 | 程德明 | Silicon substrate AIGaN-HEMT/MOS power device thermal resistance pressure fall-off test instrument |
| CN109375086B (en) * | 2018-09-09 | 2021-01-26 | 程德明 | Silicon-based AlGaN-HEMT/MOS power device thermal resistance and voltage drop tester |
| CN111239576A (en) * | 2018-11-29 | 2020-06-05 | 株洲中车时代电气股份有限公司 | Constant power cycle test circuit and method based on power loss linear control |
| CN111239576B (en) * | 2018-11-29 | 2021-08-10 | 株洲中车时代半导体有限公司 | Constant power cycle test circuit and method based on power loss linear control |
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