CN109633405B - Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation - Google Patents

Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation Download PDF

Info

Publication number
CN109633405B
CN109633405B CN201910081034.0A CN201910081034A CN109633405B CN 109633405 B CN109633405 B CN 109633405B CN 201910081034 A CN201910081034 A CN 201910081034A CN 109633405 B CN109633405 B CN 109633405B
Authority
CN
China
Prior art keywords
tested
temperature
controller
constant current
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910081034.0A
Other languages
Chinese (zh)
Other versions
CN109633405A (en
Inventor
禹健
郭天星
高红斌
张海燕
王�琦
白建云
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanxi University
Original Assignee
Shanxi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanxi University filed Critical Shanxi University
Priority to CN201910081034.0A priority Critical patent/CN109633405B/en
Publication of CN109633405A publication Critical patent/CN109633405A/en
Application granted granted Critical
Publication of CN109633405B publication Critical patent/CN109633405B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention provides a junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation. The calibration mode is formed by connecting a tested device and an accompanying load in parallel under the excitation of a constant current source, the voltages at two ends of a drain electrode and a source electrode of the accompanying load are controlled, so that the voltages at two ends of the constant current source are kept unchanged before and after the tested device is conducted, the saturated conduction voltage drop of the tested device at different junction temperatures is measured, and the relation between the junction temperature and the saturated conduction voltage drop is obtained; the measurement mode is that the device to be measured is arranged on the heat dissipation assembly under the excitation of the constant current source, the saturation conduction voltage drop is controlled to enable the device to be measured to work under different heating powers, the saturation conduction voltage drop of the device to be measured is measured, the junction temperature of the device to be measured is reversely deduced according to the relation between the junction temperature-and the saturation conduction voltage drop, and the junction temperature characteristics of the device under different heating powers are obtained to evaluate the heat dissipation performance of the heat dissipation assembly.

Description

Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation
Technical Field
The invention discloses a junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation, and belongs to the technical field of reliability tests of power switching devices.
Background
The power switching device also generates a certain power loss on the chip while converting and controlling the electric energy, resulting in a sharp rise in the temperature of the chip. Therefore, avoiding device damage due to overheating is a problem that must be considered during operation of the power switching device. In order to facilitate heat dissipation, the power switch device needs to be additionally provided with a heat dissipation component. Therefore, the quality of the installation quality of the power device and the heat dissipation assembly in actual engineering plays an important role in the heat dissipation performance of the whole device.
In order to evaluate the heat dissipation performance of the whole device, the heating power of the device needs to be set to obtain the junction temperature, and whether the junction temperature exceeds the highest allowable junction temperature is detected.
At present, four more mature power switch device junction temperature measurement methods are mainly used, namely a physical contact method, an optical method, an electrothermal coupling model method and a temperature-sensitive parameter method. The physical contact method mainly uses a platinum resistor or a thermocouple temperature sensor to perform contact measurement. During measurement, in order to make the thermosensitive element fully contact with the surface of the chip of the device to be measured, the device package must be opened, and the measurement accuracy is easily affected by the installation quality of the temperature measuring element, so the operability is not strong; the optical method generally uses an infrared thermal imager to perform non-contact measurement on a measured element, so that the temperature distribution of the surface of the whole chip can be obtained, and the measurement requirement of real-time junction temperature of the measured element can be met. However, the measurement method also needs to open the device package, and has the disadvantages of high equipment cost, high measurement cost and high requirement on measurement personnel; the electrothermal coupling model method is a common junction temperature simulation method, and can obtain junction temperature and the variation trend thereof in real time through a thermal network model established by a thermal-electric analogy theory, so as to realize online measurement. But the heat resistance is difficult to obtain in the actual working condition, so the application is impossible; the temperature-sensitive parameter method is used for indirectly measuring junction temperature by utilizing the fact that certain state parameters of a tested device chip have certain correlation with temperature in a specific temperature range. These state parameters are called temperature-sensitive parameters, and the temperature-sensitive parameters usually measured mainly include saturated conduction voltage drop Vce-satGate turn-on delay time td(on)Threshold voltage Vge(th)And the like.
Currently, junction temperature detection techniques related to power switching devices have been greatly developed. The temperature-sensitive parameter method has the advantages of low measurement cost, high accuracy and high soundThe advantage of fast response becomes the main measurement means of junction temperature detection of the power switch device. The patent application number is CN106353665A, the IGBT packaging structure needs to be destroyed by adopting an optical fiber temperature sensor to carry out contact measurement on the IGBT to be tested, so the practical operability is not strong; "an IGBT junction temperature measuring device" (patent application No. CN201610525421) mainly measures the turn-off delay time t of the IGBT in real timed(off)And IGBT collector current according to IGBT junction temperature, IGBT collector current and IGBT turn-off delay time td(off)The junction temperature of the corresponding IGBT is obtained through the three-dimensional relation. The method has high measurement cost and high requirement on experimental environment by using the turn-off delay time as a temperature-sensitive parameter, and the on-line measurement of the turn-off delay time of the IGBT is difficult to realize under the actual working condition; the temperature calibration platform for measuring the IGBT junction temperature based on the saturation conduction voltage drop and the method for realizing the IGBT junction temperature measurement (patent application No. CN201510245724) mainly determine the three-dimensional relation among the saturation conduction voltage drop, the junction temperature and the collector current of the IGBT under the environment of a constant temperature box, and then obtain the corresponding junction temperature by measuring the saturation conduction voltage drop and the collector current. The method is difficult to ensure the consistency of the bias conditions in the measurement and calibration modes, thereby influencing the accuracy of junction temperature measurement.
In the traditional temperature-sensitive parameter junction temperature measuring method based on saturation conduction voltage drop, a grid signal of a device to be measured generally gives a narrow pulse in order to prevent the device from self-heating under a large-current working condition. Meanwhile, the saturated conduction voltage drop needs to be acquired in a short time, otherwise, the measurement is inaccurate due to the rapid rise of the junction temperature. Because the constant current source used for measurement is not an ideal constant current source, the output current of the constant current source is influenced by the change of voltage drop at two ends of the load, and the accuracy of the junction temperature measurement result is further influenced.
Disclosure of Invention
The invention mainly aims at the problem that errors are caused by the change of bias conditions at the measuring moment due to the fact that different working conditions of devices under a calibration mode and a measuring mode are ignored when the junction temperature is measured by a traditional temperature-sensitive parameter method based on saturated conduction voltage drop, and provides a junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation.
The invention provides a junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation, which comprises the following components in a calibration mode: the adjustable voltage source, the adjustable constant current source and the device Q1 to be tested are connected in series to form a loop; the negative electrode of the adjustable voltage source is a common ground; the device to be tested, the temperature sensor and the heat storage block are arranged in the heat preservation container; the accompanying load Q2 is connected in parallel with the device under test Q1; the analog input end of the A/D1 is connected with the collector and the emitter of the device Q1 to be tested; the A/D1 receives the controller conversion starting signal and transmits the data result of the conversion of the analog number to the controller; the gate of the device under test Q1 is connected to the output O of gate drive 1; the power supply end V of the grid drive 1 is connected with the D/A1; D/A1 receives data transmitted by the controller; a grid control signal output by the controller is connected with the control end C of the grid drive 2, and meanwhile, the grid control signal is connected with the control end C of the grid drive 1 through a NOT gate; the grounding end G of the gate driver 1 is connected with the common ground; the gate of the accompanying load Q2 is connected to the output terminal O of the gate driver 2; the power supply end V of the gate driver 2 is connected with the output end of the operational amplifier D1; the non-inverting input terminal of the operational amplifier D1 is connected to the drain of the accompanying load Q2; the inverting input end of the operational amplifier D1 is connected with the voltage output end of the D/A2; the D/A2 receives the data transmitted by the controller; the grounding end G of the gate driver 2 is connected with the common ground; the controller is connected with the temperature sensor;
the composition in the measurement mode includes: the adjustable voltage source, the MOS tube Q3, the feedback resistor R and the device Q1 to be tested are connected in series to form a loop; the adjustable constant current source consists of an MOS (metal oxide semiconductor) tube Q3, an operational amplifier D2 and a feedback resistor R; the grid electrode of the MOS tube Q3 is connected with the output end of the operational amplifier D2; the inverting input end of the operational amplifier D2 is connected with the source electrode of the MOS transistor Q3; one end of a voltage output end of the D/A4 is connected with a non-inverting input end of the operational amplifier D2, and the other end of the voltage output end is connected with a collector of the device-under-test Q1; D/A4 receives data transmitted by the controller; the device to be tested is arranged on the heat dissipation assembly; the analog input end of the A/D2 is connected with the collector and the emitter of the device to be tested; the analog input end of the A/D3 is connected with two ends of a feedback resistor R; the A/D2 and the A/D3 receive the conversion starting signal of the controller and transmit the data result of analog-digital conversion to the controller; the grid of the tested device is connected with the output end O of the grid drive 1; the grounding end G of the gate drive 1 is connected with the output end of the operational amplifier D3; the control end of the grid drive 1 is connected with the controller; the power supply end V of the grid drive 1 is connected with a standard grid voltage power supply; the non-inverting input terminal of the operational amplifier D3 is connected with the collector of the device under test; the inverting input end of the operational amplifier D3 is connected with the voltage output end of the D/A3; the D/a3 receives data transmitted by the controller.
The power switch junction temperature calibration and heat dissipation component performance evaluation device based on the bias current dynamic precompensation method is used for calibration and evaluation, and comprises a calibration step and a measurement step;
wherein, the calibration step comprises:
a first calibration step: initial parameters of injection: chip heat capacity C of device under testdieHeat capacity C of heat storage blockHeat storage blockConstant current source bias current ISThermal equilibrium transition time tmTemperature measurement list, rated gate voltage VGETurn-on delay time t of the device to be testedd(on)And the saturation conduction voltage drop acquisition time t of the tested devicesThe highest allowable junction temperature T of the device to be testedjmaxSwitching device voltage variation threshold VMAXThe saturation conduction voltage drop value V of the tested device under rated currentSVoltage preset value V at two ends of constant current sourcemTemperature measurement error threshold Te；
A second calibration step: putting the heat storage block with the temperature lower than the minimum value of the temperature measurement list item into a heat preservation container; taking value from the temperature measurement list item from low to high, recording as TmAnd raising the internal temperature of the insulated container to a target temperature Tm(ii) a Raising the temperature to a target temperature TmThe process of (2) is as follows: firstly, measuring the initial temperature T in the heat-insulating container0Setting the bias current of the adjustable constant current source as ISThe output grid control signal of the controller is at low level to make the tested device conduct for a duration of t, and the saturation conduction voltage drop V of the tested device is measuredce(ii) a The controller outputs a gate control signal of high level to turn off the device under test and wait for a time tmAfter that, the air conditioner is started to work,the temperature of the tested device and the shell reach the same temperature, and the temperature sensor measures the internal temperature T of the heat preservation container at the moment1(ii) a By the formula C ═ T1-T0)/Vce*IST, calculating the internal heat capacity C of the heat-insulating container; based on the heat capacity C and the target temperature TmCalculating the on-time t of the device under test1(ii) a Conducting the device to be tested for a time period t1(ii) a Turn off the device under test, wait time tmThen, the temperature T inside the heat-insulating container at this time is measuredn(ii) a (iii) determination of Tm-Tn＜TeIf it is less than TeIf so, ending the temperature rise process; if it is greater than TeThen return to step 2 until it is less than Te；
A third calibration step: the controller sends high level to the control terminal of the gate driver 2 to turn on the accompanying load, and adjusts the magnitude of D/A2 to make the voltage V between the drain and the source of the accompanying loadBIs equal to VS；
A fourth calibration step: the voltage at the two ends of the voltage source is regulated to make the voltage at the two ends of the constant current source be a preset value Vm(ii) a Adjusting bias current of constant current source equal to ISWaiting for the bias current of the adjustable constant current source to be stable; setting the magnitude of D/A1 equal to the nominal gate voltage V of the device under testGE(ii) a At tau0At the moment, the controller outputs a grid control signal with low level to enable the tested device to be conducted and the load to be cut off; at tau1(τ0+td(on)＜τ1＜τ0+ts) At that time, the A/D1 value was collected and recorded as VA(ii) a The controller outputs a grid control signal to be high level, so that the accompanying load is switched on, and the device to be tested is switched off;
a fifth calibration step: determine | VA-VB|＜VMAXIf it is less than VMAXRecording the saturation conduction voltage drop V of the device under testAA value; if the absolute value of the difference is greater than VMAXD/A2 is set to have a magnitude corresponding to the drain-source voltage VBIs equal to VAAnd returning to the fourth calibration step until | VA-VB|＜VMAX；
A calibration step six: judging whether the value of the temperature list item is finished or not, and if so, continuing the next step; if not, returning to the second calibration step;
a seventh calibration step: fitting the measured saturated conduction voltage drop data values of the tested device under different junction temperatures into Tj＝f(VCE) A relational expression;
the measuring step comprises:
a first measuring step: initial parameters of injection: turn-on delay time t of device under testd(on)And the saturation conduction voltage drop acquisition time t of the tested devicesHeating power list item of tested device and constant current source bias current ISCurrent error threshold Ie；
A second measuring step: taking the value of the heating power list item of the tested device as Pi；
A third measuring step: D/A4 is set to make constant current source bias current equal to ISWaiting for the bias current of the constant current source to be stable;
and a fourth measuring step: the controller outputs the gate control signal at low level according to formula VD/A3＝Pi/ISSetting the size of D/A3 and waiting for thermal steady state;
a fifth measuring step: at tau2At the moment, the controller outputs a grid control signal with high level; at tau3(τ2+td(on)＜τ3＜τ2+ts) At that time, the values of A/D2 and A/D3 were collected and recorded as V, respectivelyCEAnd IA(ii) a Calculation formula Δ IS＝IS-IAThe size of (d);
a sixth measuring step: judgment of | Δ IS|＜IeIf it is less than IeContinuing the next step; if it is greater than IeSetting the D/A4 to make the bias current of the adjustable constant current source equal to IS+ΔISWaiting for the bias current of the adjustable constant current source to be stable, and returning to the measuring step four;
a seventh measuring step: by the relation Tj＝f(VCE) And saturated conduction voltage drop VCEValue, back-deduct device under test junction temperature Tj；
And a measurement step eight: judging whether the value of the heating power list item is finished or not, and if so, continuing the next step; if not, returning to the second measurement step;
nine measuring steps: and obtaining junction temperature characteristics of the tested device under different heating powers.
Different from the prior art, the junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation comprises two working modes of calibration and measurement. The calibration mode is formed by connecting a tested device and an accompanying load in parallel under the excitation of a constant current source, the voltages at two ends of a drain electrode and a source electrode of the accompanying load are controlled, so that the voltages at two ends of the constant current source are kept unchanged before and after the tested device is conducted, the saturated conduction voltage drop of the tested device at different junction temperatures is measured, and the relation between the junction temperature and the saturated conduction voltage drop is obtained; the measurement mode is composed of a tested device under the excitation of a constant current source, the tested device is placed on the heat dissipation assembly, the saturation conduction voltage drop is controlled to enable the tested device to work under different heating powers, the saturation conduction voltage drop of the tested device is measured, the junction temperature of the tested device is reversely deduced according to the relation between the junction temperature and the saturation conduction voltage drop, the junction temperature characteristics of the device under different heating powers are obtained, and the junction temperature characteristics are used for evaluating the heat dissipation performance of the heat dissipation assembly.
Drawings
FIG. 1 is a diagram of a device under test conduction circuit in a calibration mode according to the present invention.
Fig. 2 is a circuit diagram of the present invention accompanied by load conduction in calibration mode.
Fig. 3 is a circuit diagram of the present invention in the measurement mode.
Fig. 4 is a curve trend chart of the change of the output current of the constant current source along with the voltages at two ends of the constant current source.
FIG. 5 is a graph of the output characteristics of a device under test.
FIG. 6 is a comparison graph of the calibration measurement results of the device under test at different test currents.
Fig. 7 is an RC thermal network model of the device in calibration mode.
FIG. 8 is a graph of junction and shell temperature as a function of time from the beginning of heating to the end of steady state of the device in a Pspice environment.
FIG. 9 is a graph of junction temperature versus time at the beginning of heating of a device in a Pspie environment.
Fig. 10 is a three-dimensional relationship diagram of junction temperature, saturation conduction voltage drop, and gate voltage fitted by Matlab.
FIG. 11 is a calibration mode flow chart.
FIG. 12 is a flow chart of the temperature ramp up process in calibration mode.
Fig. 13 is a measurement mode flowchart.
Detailed Description
The technical solution of the present invention will be further described in more detail with reference to the following embodiments. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The testing device designed by the invention is shown in figures 1, 2 and 3. The tested device is an IGBT (insulated gate bipolar translator) with the model of IKW40T120, the packaging form is TO-247, the rated current is 40A, the maximum allowable junction temperature is 150 ℃, and the switching-on delay time is 52 ns.
The invention provides a junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation, as shown in figure 1, the device comprises the following components in a calibration mode: the adjustable voltage source, the adjustable constant current source and the device Q1 to be tested are connected in series to form a loop; the negative electrode of the adjustable voltage source is a common ground; the device to be tested, the temperature sensor and the heat storage block are arranged in the heat preservation container; the accompanying load Q2 is connected in parallel with the device under test Q1; the analog input end of the A/D1 is connected with the collector and the emitter of the device Q1 to be tested; the A/D1 receives the controller conversion starting signal and transmits the data result of the conversion of the analog number to the controller; the gate of the device under test Q1 is connected to the output O of gate drive 1; the power supply end V of the grid drive 1 is connected with the D/A1; D/A1 receives data transmitted by the controller; a grid control signal output by the controller is connected with the control end C of the grid drive 2, and meanwhile, the grid control signal is connected with the control end C of the grid drive 1 through a NOT gate; the grounding end G of the gate driver 1 is connected with the common ground; the gate of the accompanying load Q2 is connected to the output terminal O of the gate driver 2; the power supply end V of the gate driver 2 is connected with the output end of the operational amplifier D1; the non-inverting input terminal of the operational amplifier D1 is connected to the drain of the accompanying load Q2; the inverting input end of the operational amplifier D1 is connected with the voltage output end of the D/A2; the D/A2 receives the data transmitted by the controller; the grounding end G of the gate driver 2 is connected with the common ground; the controller is connected with the temperature sensor;
as shown in fig. 2, the components of the device in the measurement mode include: the adjustable voltage source, the MOS tube Q3, the feedback resistor R and the device Q1 to be tested are connected in series to form a loop; the adjustable constant current source consists of an MOS (metal oxide semiconductor) tube Q3, an operational amplifier D2 and a feedback resistor R; the grid electrode of the MOS tube Q3 is connected with the output end of the operational amplifier D2; the inverting input end of the operational amplifier D2 is connected with the source electrode of the MOS transistor Q3; one end of a voltage output end of the D/A4 is connected with a non-inverting input end of the operational amplifier D2, and the other end of the voltage output end is connected with a collector of the device-under-test Q1; D/A4 receives data transmitted by the controller; the device to be tested is arranged on the heat dissipation assembly; the analog input end of the A/D2 is connected with the collector and the emitter of the device to be tested; the analog input end of the A/D3 is connected with two ends of a feedback resistor R; the A/D2 and the A/D3 receive the conversion starting signal of the controller and transmit the data result of analog-digital conversion to the controller; the grid of the tested device is connected with the output end O of the grid drive 1; the grounding end G of the gate drive 1 is connected with the output end of the operational amplifier D3; the control end of the grid drive 1 is connected with the controller; the power supply end V of the grid drive 1 is connected with a standard grid voltage power supply; the non-inverting input terminal of the operational amplifier D3 is connected with the collector of the device under test; the inverting input end of the operational amplifier D3 is connected with the voltage output end of the D/A3; the D/a3 receives data transmitted by the controller.
In the present embodiment, the constant current source supplies the operating current of the IGBT under test as the rated current 40A of the device under test.
According to the theory of thermoelectric analogy, the thermal circuit parameters can be analogized to the circuit parameters, so that the heat dissipation model of the IGBT can be analogized to the circuit shown in FIG. 7. Where P is the heating power, TjTo junction temperature, Zth-jcTo provide thermal resistance to the shell, Zth-chIs the thermal resistance of the case to the heat sink, Zth-haThermal resistance of the heat sink to ambient temperature, TaIs ambient temperature.
Thermal equilibrium transition time tmDetermination of (1): in the Pspice circuit simulation software, an RC hot network model shown in FIG. 4 is established. And inquiring a manual of the IGBT to be tested, setting junction and shell thermal resistance values and thermal capacity values, and setting thermal resistance and thermal capacity values from the junction to the thermal insulation layer and from the thermal insulation layer to the environment. The current source is set to be a pulse current source, the current peak value is 76A, the pulse width is 500us, the delay time is 10ms, and the voltage of the voltage source is set to be 15V. At junction temperature T respectivelyjTemperature T of the shellcA voltage probe is arranged at the position, transient simulation analysis is carried out on the circuit, the trend that the temperature of the junction and the shell of the tested device changes along with time from the beginning of heating under the working condition that the ambient temperature is 15 ℃ and the heating power is 76W is simulated, and the simulation result is shown in figure 5. As can be seen from FIG. 5, the junction-shell temperature reached a steady state value of 16.8 ℃ at time 120 ms. Thus, the transition time t for the interior of the insulation to reach thermal equilibriummAnd the temperature sensor is 110ms, namely the temperature sensor at least needs to measure the internal temperature of the heat insulation layer after 110ms from the conduction of the tested device.
Saturated conduction voltage drop acquisition time tsDetermination of (1): the circuit of fig. 4 was set up under Pspice simulation software at junction temperature TjA voltage probe is arranged, transient simulation analysis is carried out on the circuit, the junction temperature change trend of the tested device along with time is simulated, and the simulation result is shown in figure 6. As can be seen from FIG. 6, the junction temperature rose from 15 deg.C to 16 deg.C for 30.1 us; the junction temperature rises from 16 ℃ to 17 ℃ for 31.6 us; the junction temperature rose from 17 ℃ to 18 ℃ for 36.2 us. Thereafter, the junction temperature curve is gradually flattened over time. Therefore, the acquisition time t of the saturation conduction voltage drop of the tested devicesWithin 30us, the junction temperature measurement error is less than 1 ℃.
Switching device voltage variation threshold VMAXDetermination of (1): in the Pspice circuit simulation software, a constant current source circuit shown in FIG. 7 is established, a voltage source V is set to be a pulse voltage source, the output steady-state current of a constant current source is 40A, and ICA current probe is arranged at the position of the current probe to perform transient analysis on the circuit, the change rule of the bias current of the constant current source is simulated when the load is switched to a device to be tested, and the simulation result is shown in fig. 8.As can be seen from fig. 8, when the voltage step change at both ends of the constant current source is 0.1V, the bias current of the constant current source changes by 40mA at the saturated conduction voltage drop acquisition time of 30 us. FIG. 9 is a graph of the output characteristics of a device under test. As can be seen from FIG. 9, when the collector-emitter current of the device under test changes by 40mA, the saturation conduction voltage drop changes by 1 mV; FIG. 10 is a graph of the saturation turn-on voltage drop of a device under test at different junction temperatures for a certain gate voltage. As can be seen from fig. 10, when the collecting and radiating level current of the device under test changes by 40mA, the saturation conduction voltage drop changes by 1mV, and the calibration operating point changes from point a to point B, which results in a change of the junction temperature of the device under test by 1 ℃. Therefore, the measured temperature error of the tested device is ensured to be in the range of 1 ℃, and the voltage change between the two is not more than 0.1V when the load is switched to the tested device, namely the load voltage change threshold value V is switchedMAXIt was 0.1V.
Determination of the constraint condition of the conduction time t of the device under test: t is not more thanjmax-T0)/Cdie*IS*VS。②t≤(Tjmax-T0)/CHeat storage block*IS*VS. Taking the minimum value of t in the first step and the second step as the value range of t.
The invention provides a junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation, which comprises the following operation steps of:
the flowchart of the calibration step is shown in fig. 11, and includes the steps of:
a first calibration step: initial parameters of injection: chip heat capacity C of device under testdieHeat capacity C of heat storage blockHeat storage blockConstant current source bias current ISThermal equilibrium transition time tmTemperature measurement list, rated gate voltage VGETurn-on delay time t of the device to be testedd(on)And the saturation conduction voltage drop acquisition time t of the tested devicesThe highest allowable junction temperature T of the device to be testedjmaxSwitching device voltage variation threshold VMAXThe saturation conduction voltage drop value V of the tested device under rated currentSVoltage preset value V at two ends of constant current sourcemTemperature measurement error threshold Te。
CalibrationStep two: and (3) putting the heat storage block with the temperature lower than the minimum value of the temperature measurement list item into a heat preservation container. Taking value from the temperature measurement list item from low to high, recording as TmAnd raising the internal temperature of the insulated container to a target temperature Tm. FIG. 12 shows the temperature increase to the target temperature T in the calibration modemThe process is as follows: firstly, measuring the initial temperature T in the heat-insulating container0Setting bias current of constant current source as ISThe output grid control signal of the controller is at low level to make the tested device conduct for a duration of t, and the saturation conduction voltage drop V of the tested device is measuredce. The controller outputs a gate control signal of high level to turn off the device under test and wait for a time tmThen, the temperature of the tested device and the shell reach the same temperature, and the temperature sensor measures the temperature T in the heat preservation container at the moment1. By the formula C ═ T1-T0)/Vce*IST, calculating the heat capacity C in the heat preservation container. Based on the heat capacity C and the target temperature TmCalculating the on-time t of the device under test1. Conducting the device to be tested for a time period t1. Turn off the device under test, wait time tmThen, the temperature T inside the heat-insulating container at this time is measuredn. (iii) determination of Tm-Tn＜TeIf it is less than TeIf so, ending the temperature rise process; if it is greater than TeThen return to step 2 until it is less than Te。
A third calibration step: the controller sends high level to the control terminal of the gate driver 2 to turn on the accompanying load, and adjusts the magnitude of D/A2 to make the voltage V between the drain and the source of the accompanying loadBIs equal to VS。
A fourth calibration step: the voltage at the two ends of the voltage source is regulated to make the voltage at the two ends of the constant current source be a preset value Vm. Adjusting bias current of constant current source equal to ISAnd waiting for the bias current of the constant current source to be stable. Setting the magnitude of D/A1 equal to the nominal gate voltage V of the device under testGE. At tau0At the moment, the controller outputs a grid control signal with low level to enable the tested device to be conducted and the load to be cut off; at tau1(τ0+52ns＜τ1＜τ0+30us), the value of A/D1 is collected and recorded as VA. The controller outputs a gate control signal at a high level to turn on the load and turn off the device under test.
A fifth calibration step: determine | VA-VBIf the voltage is less than 0.1V, recording the saturation conduction voltage drop V of the tested deviceAA value; if the absolute value of the difference is greater than VMAXSetting the output V of D/A2BIs equal to VAAnd returning to the fourth calibration step until | VA-VB|＜0.1V。
A calibration step six: judging whether the value of the temperature list item is finished or not, and if so, continuing the next step; if not, returning to the second calibration step.
A seventh calibration step: fitting the measured saturated conduction voltage drop data values of the tested device under different junction temperatures into Tj＝f(VCE) The relationship of junction temperature and saturated conduction voltage drop is shown in fig. 10.
The flow chart of the measurement step is shown in fig. 13, and includes the steps of:
a first measuring step: initial parameters of injection: turn-on delay time t of device under testd(on)And the saturation conduction voltage drop acquisition time t of the tested devicesHeating power list item of tested device and constant current source bias current ISCurrent error threshold Ie。
A second measuring step: taking the value of the heating power list item of the tested device as Pi。
A third measuring step: D/A4 is set to make constant current source bias current equal to ISAnd waiting for the bias current of the constant current source to be stable.
And a fourth measuring step: the controller outputs the gate control signal at low level according to formula VD/A3＝Pi/ISThe D/A3 is sized to wait for a thermal steady state.
A fifth measuring step: at tau2At the moment, the controller outputs a grid control signal with high level; at tau3(τ2+52ns＜τ3＜τ2+30us), the values of A/D2 and A/D3 were collected and recorded as V, respectivelyCEAnd IA. Calculation formula Δ IS＝IS-IAThe size of (2).
A sixth measuring step: judgment of | Δ IS|＜IeIf it is less than IeContinuing the next step; if it is greater than IeSetting the D/A4 to make the bias current of the adjustable constant current source equal to IS+ΔISAnd waiting for the bias current of the constant current source to be stable, and returning to the fourth measuring step.
A seventh measuring step: by the relation Tj＝f(VCE) And saturated conduction voltage drop VCEValue, back-deduct device under test junction temperature Tj。
And a measurement step eight: judging whether the value of the heating power list item is finished or not, and if so, continuing the next step; if not, returning to the second measurement step.
Nine measuring steps: and obtaining junction temperature characteristics of the tested device under different heating powers.
Different from the prior art, the junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation comprises two working modes of calibration and measurement. The calibration mode is formed by connecting a tested device and an accompanying load in parallel under the excitation of a constant current source, the voltages at two ends of a drain electrode and a source electrode of the accompanying load are controlled, so that the voltages at two ends of the constant current source are kept unchanged before and after the tested device is conducted, the saturated conduction voltage drop of the tested device at different junction temperatures is measured, and the relation between the junction temperature and the saturated conduction voltage drop is obtained; the measurement mode is composed of a tested device under the excitation of a constant current source, the tested device is placed on the heat dissipation assembly, the saturation conduction voltage drop is controlled to enable the tested device to work under different heating powers, the saturation conduction voltage drop of the tested device is measured, the junction temperature of the tested device is reversely deduced according to the relation between the junction temperature and the saturation conduction voltage drop, the junction temperature characteristics of the device under different heating powers are obtained, and the junction temperature characteristics are used for evaluating the heat dissipation performance of the heat dissipation assembly.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (2)

1. A junction temperature calibration and heat dissipation component performance evaluation device based on bias current precompensation is characterized in that the device in a calibration mode comprises the following components: the adjustable voltage source, the adjustable constant current source and the device Q1 to be tested are connected in series to form a loop; the negative electrode of the adjustable voltage source is a common ground; the device to be tested, the temperature sensor and the heat storage block are arranged in the heat preservation container; the accompanying load Q2 is connected in parallel with the device under test Q1; the analog input end of the A/D1 is connected with the collector and the emitter of the device Q1 to be tested; the A/D1 receives the controller conversion starting signal and transmits the data result of the conversion of the analog number to the controller; the gate of the device under test Q1 is connected to the output O of gate drive 1; the power supply end V of the grid drive 1 is connected with the D/A1; D/A1 receives data transmitted by the controller; a grid control signal output by the controller is connected with the control end C of the grid drive 2, and meanwhile, the grid control signal is connected with the control end C of the grid drive 1 through a NOT gate; the grounding end G of the gate driver 1 is connected with the common ground; the gate of the accompanying load Q2 is connected to the output terminal O of the gate driver 2; the power supply end V of the gate driver 2 is connected with the output end of the operational amplifier D1; the non-inverting input terminal of the operational amplifier D1 is connected to the drain of the accompanying load Q2; the inverting input end of the operational amplifier D1 is connected with the voltage output end of the D/A2; the D/A2 receives the data transmitted by the controller; the grounding end G of the gate driver 2 is connected with the common ground; the controller is connected with the temperature sensor;
the composition in the measurement mode includes: the adjustable voltage source, the MOS tube Q3, the feedback resistor R and the device Q1 to be tested are connected in series to form a loop; the adjustable constant current source consists of an MOS (metal oxide semiconductor) tube Q3, an operational amplifier D2 and a feedback resistor R; the grid electrode of the MOS tube Q3 is connected with the output end of the operational amplifier D2; the inverting input end of the operational amplifier D2 is connected with the source electrode of the MOS transistor Q3; one end of a voltage output end of the D/A4 is connected with a non-inverting input end of the operational amplifier D2, and the other end of the voltage output end is connected with a collector of the device-under-test Q1; D/A4 receives data transmitted by the controller; the device to be tested is arranged on the heat dissipation assembly; the analog input end of the A/D2 is connected with the collector and the emitter of the device to be tested; the analog input end of the A/D3 is connected with two ends of a feedback resistor R; the A/D2 and the A/D3 receive the conversion starting signal of the controller and transmit the data result of analog-digital conversion to the controller; the grid of the tested device is connected with the output end O of the grid drive 1; the grounding end G of the gate drive 1 is connected with the output end of the operational amplifier D3; the control end of the grid drive 1 is connected with the controller; the power supply end V of the grid drive 1 is connected with a standard grid voltage power supply; the non-inverting input terminal of the operational amplifier D3 is connected with the collector of the device under test; the inverting input end of the operational amplifier D3 is connected with the voltage output end of the D/A3; the D/a3 receives data transmitted by the controller.
2. The bias current pre-compensation based junction temperature calibration and heat dissipation assembly performance evaluation device according to claim 1, wherein the device is implemented with calibration steps and measurement steps;
wherein, the calibration step comprises:
a first calibration step: initial parameters of injection: chip heat capacity C of device under testdieHeat capacity C of heat storage blockHeat storage blockConstant current source bias current ISThermal equilibrium transition time tmTemperature measurement list, rated gate voltage VGETurn-on delay time t of the device to be testedd(on)And the saturation conduction voltage drop acquisition time t of the tested devicesThe highest allowable junction temperature T of the device to be testedjmaxSwitching device voltage variation threshold VMAXThe saturation conduction voltage drop value V of the tested device under rated currentSVoltage preset value V at two ends of constant current sourcemTemperature measurement error threshold Te；
A second calibration step: putting the heat storage block with the temperature lower than the minimum value of the temperature measurement list item into a heat preservation container; taking value from the temperature measurement list item from low to high, recording as TmAnd raising the internal temperature of the insulated container to a target temperature Tm(ii) a Raising the temperature to a target temperature TmThe process of (2) is as follows: firstly, measuring the initial temperature T in the heat-insulating container0Setting the bias current of the adjustable constant current source as ISThe output grid control signal of the controller is at low level to make the tested device conduct for a duration of t, and the saturation conduction voltage drop V of the tested device is measuredce(ii) a The controller outputs a gate control signal ofHigh level, turn off the device under test, wait time tmThen, the temperature of the tested device and the shell reach the same temperature, and the temperature sensor measures the temperature T in the heat preservation container at the moment1(ii) a By the formula C ═ T1-T0)/Vce*IST, calculating the internal heat capacity C of the heat-insulating container; based on the heat capacity C and the target temperature TmCalculating the on-time t of the device under test1(ii) a Conducting the device to be tested for a time period t1(ii) a Turn off the device under test, wait time tmThen, the temperature T inside the heat-insulating container at this time is measuredn(ii) a (iii) determination of Tm-Tn＜TeIf it is less than TeIf so, ending the temperature rise process; if it is greater than TeThen return to step 2 until it is less than Te；
A third calibration step: the controller sends high level to the control terminal of the gate driver 2 to turn on the accompanying load, and adjusts the magnitude of D/A2 to make the voltage V between the drain and the source of the accompanying loadBIs equal to VS；
A fourth calibration step: the voltage at the two ends of the voltage source is regulated to make the voltage at the two ends of the constant current source be a preset value Vm(ii) a Adjusting bias current of constant current source equal to ISWaiting for the bias current of the adjustable constant current source to be stable; setting the magnitude of D/A1 equal to the nominal gate voltage V of the device under testGE(ii) a At tau0At the moment, the controller outputs a grid control signal with low level to enable the tested device to be conducted and the load to be cut off; at tau1(τ0+td(on)＜τ1＜τ0+ts) At that time, the A/D1 value was collected and recorded as VA(ii) a The controller outputs a grid control signal to be high level, so that the accompanying load is switched on, and the device to be tested is switched off;
a fifth calibration step: determine | VA-VB|＜VMAXIf it is less than VMAXRecording the saturation conduction voltage drop V of the device under testAA value; if the absolute value of the difference is greater than VMAXD/A2 is set to have a magnitude corresponding to the drain-source voltage VBIs equal to VAAnd returning to the fourth calibration step until | VA-VB|＜VMAX；
A calibration step six: judging whether the value of the temperature list item is finished or not, and if so, continuing the next step; if not, returning to the second calibration step;
a seventh calibration step: fitting the measured saturated conduction voltage drop data values of the tested device under different junction temperatures into Tj＝f(VCE) A relational expression;
the measuring step comprises:
a first measuring step: initial parameters of injection: turn-on delay time t of device under testd(on)And the saturation conduction voltage drop acquisition time t of the tested devicesHeating power list item of tested device and constant current source bias current ISCurrent error threshold Ie；
A second measuring step: taking the value of the heating power list item of the tested device as Pi；
A third measuring step: D/A4 is set to make constant current source bias current equal to ISWaiting for the bias current of the constant current source to be stable;
and a fourth measuring step: the controller outputs the gate control signal at low level according to formula VD/A3＝Pi/ISSetting the size of D/A3 and waiting for thermal steady state;
a fifth measuring step: at tau2At the moment, the controller outputs a grid control signal with high level; at tau3(τ2+td(on)＜τ3＜τ2+ts) At that time, the values of A/D2 and A/D3 were collected and recorded as V, respectivelyCEAnd IA(ii) a Calculation formula Δ IS＝IS-IAThe size of (d);
a sixth measuring step: judgment of | Δ IS|＜IeIf it is less than IeContinuing the next step; if it is greater than IeSetting the D/A4 to make the bias current of the adjustable constant current source equal to IS+ΔISWaiting for the bias current of the adjustable constant current source to be stable, and returning to the measuring step four;
a seventh measuring step: by the relation Tj＝f(VCE) And saturated conduction voltage drop VCEValue, back-deduct device under test junction temperature Tj；
And a measurement step eight: judging whether the value of the heating power list item is finished or not, and if so, continuing the next step; if not, returning to the second measurement step;
nine measuring steps: and obtaining junction temperature characteristics of the tested device under different heating powers.
CN201910081034.0A 2019-01-28 2019-01-28 Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation Active CN109633405B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910081034.0A CN109633405B (en) 2019-01-28 2019-01-28 Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910081034.0A CN109633405B (en) 2019-01-28 2019-01-28 Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation

Publications (2)

Publication Number Publication Date
CN109633405A CN109633405A (en) 2019-04-16
CN109633405B true CN109633405B (en) 2020-11-10

Family

ID=66062369

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910081034.0A Active CN109633405B (en) 2019-01-28 2019-01-28 Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation

Country Status (1)

Country Link
CN (1) CN109633405B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110488172B (en) * 2019-07-12 2022-10-04 全球能源互联网研究院有限公司 High-power IGBT junction temperature detection circuit, system and method
CN112014708B (en) * 2020-07-27 2023-02-07 西安中车永电电气有限公司 SiC power device online junction temperature calculation method based on FPGA
CN112083305B (en) * 2020-07-28 2024-04-19 株洲中车时代半导体有限公司 Method and device for measuring junction temperature of SiC MOSFET device, electronic equipment and storage medium
CN112327125B (en) * 2020-09-30 2024-06-21 北京Abb电气传动系统有限公司 Method, equipment and storage medium for monitoring thermal resistance state of power semiconductor device crust

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10300811A (en) * 1997-04-21 1998-11-13 Canon Inc Measuring method of led dc thermal resistance, and measuring device thereof
US5864230A (en) * 1997-06-30 1999-01-26 Lsi Logic Corporation Variation-compensated bias current generator
CN102072783A (en) * 2010-11-18 2011-05-25 上海第二工业大学 Method for testing junction temperature of LED
WO2011156290A2 (en) * 2010-06-07 2011-12-15 Skyworks Solutions, Inc. Apparatus and method for variable voltage distribution
CN104848961A (en) * 2015-05-14 2015-08-19 哈尔滨工业大学 Saturation-conduction-voltage-drop-based temperature calibration platform for measuring IGBT junction temperature and method for realizing IGBT junction temperature measurement
CN106771951A (en) * 2016-12-31 2017-05-31 徐州中矿大传动与自动化有限公司 Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing
CN107300663A (en) * 2017-07-06 2017-10-27 扬州扬杰电子科技股份有限公司 A kind of semiconductor junction temperature test device and its method of testing
CN208060661U (en) * 2018-03-29 2018-11-06 日立电梯（中国）有限公司 Elevator frequency converter IGBT junction temperature on-line measuring devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140055901A1 (en) * 2012-08-25 2014-02-27 North Carolina State University Solid state fault isolation devices and methods
US10337930B2 (en) * 2015-05-12 2019-07-02 GM Global Technology Operations LLC Online IGBT junction temperature estimation without the use of a dedicated temperature estimation or measurement device
EP3118638B1 (en) * 2015-06-25 2019-08-07 ABB Schweiz AG Temperature estimation in power semiconductor device in electric drive system

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10300811A (en) * 1997-04-21 1998-11-13 Canon Inc Measuring method of led dc thermal resistance, and measuring device thereof
US5864230A (en) * 1997-06-30 1999-01-26 Lsi Logic Corporation Variation-compensated bias current generator
WO2011156290A2 (en) * 2010-06-07 2011-12-15 Skyworks Solutions, Inc. Apparatus and method for variable voltage distribution
CN102072783A (en) * 2010-11-18 2011-05-25 上海第二工业大学 Method for testing junction temperature of LED
CN104848961A (en) * 2015-05-14 2015-08-19 哈尔滨工业大学 Saturation-conduction-voltage-drop-based temperature calibration platform for measuring IGBT junction temperature and method for realizing IGBT junction temperature measurement
CN106771951A (en) * 2016-12-31 2017-05-31 徐州中矿大传动与自动化有限公司 Electronic power switch device junction temperature on-Line Monitor Device, detection circuit and method of testing
CN107300663A (en) * 2017-07-06 2017-10-27 扬州扬杰电子科技股份有限公司 A kind of semiconductor junction temperature test device and its method of testing
CN208060661U (en) * 2018-03-29 2018-11-06 日立电梯（中国）有限公司 Elevator frequency converter IGBT junction temperature on-line measuring devices

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
A Method for Junction Temperature Estimation Utilizing Turn-on Saturation Current for SiC MOSFET;Hui-Chen Yang 等;《2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)》;20181025;第2296-2300页 *
基于GA-BP算法的IGBT结温预测模型;禹健 等;《自动化与仪表》;20190115(第01期);第79-83页 *
基于IGBT模块饱和压降温度特性的结温探测研究;姚芳 等;《电子器件》;20170430;第40卷(第2期);第291-295页 *

Also Published As

Publication number Publication date
CN109633405A (en) 2019-04-16

Similar Documents

Publication Publication Date Title
CN109828193B (en) Junction temperature calibration and heat dissipation assembly performance evaluation device with dynamically-unchanged bias current
CN109633405B (en) Junction temperature calibration and heat dissipation assembly performance evaluation device based on bias current precompensation
CN106443401B (en) Device and method for testing temperature rise and thermal resistance composition of power MOS device
CN109597966B (en) Method for estimating junction temperature of IGBT (insulated Gate Bipolar transistor) of power element in motor controller
CN106969851B (en) On-line detection device for measuring junction temperature of IGBT power module based on saturation voltage drop
CN105510793B (en) A kind of self-calibrating method of current transformer IGBT power module junction temperature measurement
CN105699775B (en) Discrete square wave extraction method and device for IGBT coupling thermal impedance
Du et al. Thermal network parameter estimation using cooling curve of IGBT module
CN102944824B (en) Test method for testing rectifier diode transient high temperature reverse leakage current
Baker et al. Online junction temperature measurement using peak gate current
CN111812479B (en) IGBT on-state voltage drop on-line measuring circuit and junction temperature detection method
CN107271878A (en) Pass through the hot properties method of testing and device of electric current heating semiconductor
CN111505475B (en) Method and device for calibrating parameters of electric heating model of power semiconductor module
Zhang et al. A novel method for monitoring the junction temperature of SiC MOSFET on-line based on on-state resistance
Bahun et al. Estimation of insulated-gate bipolar transistor operating temperature: simulation and experiment
Spirito et al. Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation
CN109738777B (en) Device and method for measuring thermal resistance composition of bipolar transistor device
CN112229530B (en) SiC-based MOSFET junction temperature online monitoring system and online monitoring method
Florian et al. Characterization of the nonlinear thermal resistance and pulsed thermal dynamic behavior of AlGaN–GaN HEMTs on SiC
CN114217198A (en) Short-pulse heavy-current-based SiC MOSFET module thermal resistance measurement method
Baker et al. Experimental evaluation of IGBT junction temperature measurement via peak gate current
Lefebvre et al. Discrete power semiconductor losses versus junction temperature estimation based on thermal impedance curves
CN203069740U (en) Thermal resistance test apparatus for semiconductor power device
Cova et al. Thermal characterization of IGBT power modules
Huang et al. A study of test system for thermal resistance of IGBT

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant