CN104950009B - A kind of thermal resistance analysis method - Google Patents
A kind of thermal resistance analysis method Download PDFInfo
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- CN104950009B CN104950009B CN201410131338.0A CN201410131338A CN104950009B CN 104950009 B CN104950009 B CN 104950009B CN 201410131338 A CN201410131338 A CN 201410131338A CN 104950009 B CN104950009 B CN 104950009B
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Abstract
The invention discloses a kind of thermal resistance analysis methods, pass through the heat source temperature and reference point temperature of Simultaneous Monitoring high power device, and introduce heat source and the stable quasi- thermal equilibrium state determination method of reference point temperature difference, the accurate analysis that high power device customizes region thermal resistance information can be realized within the shorter testing time, effective promotion of the accurate customization and thermal resistance structure resolution ratio of reference point locations can be realized simultaneously, the precise measurement that can be widely applied to the thermal characteristics test of various high power devices, has the characteristics that efficient, quick, applied widely.
Description
【Technical field】
The invention belongs to device thermal characteristic measurement fields, and in particular to a kind of thermal resistance analysis method.
【Background technique】
The thermal characteristic measurement of device generally carries out under the conditions of variation of ambient temperature is unconspicuous, requires device to reach when test
Variation of ambient temperature is unobvious in thermal equilibrium state and case, and such as measured device is arranged in still air chamber and is carried out.
Low-power device is easier to realize above-mentioned test condition, but for high power device (such as great power LED), i.e., can reach heat
Balance, since its heat dissipation capacity is big, environment temperature rises in test or decline is obvious, and the air in still air chamber can not
It is considered as infinitely great heat sink, the variation of the portion temperature just will appear the intuitive embodiment on thermal resistance differential structrue function several
The peak and valley structure that can not be differentiated, be easy to obscure or error analysis reference point corresponding to position, cause accurately differentiate ginseng
Examination point reduces analysis result accuracy.It is difficult to reach thermally equilibrated high power device for certain, is not able to satisfy the survey of thermal characteristics
Examination requires, so that Thermal characteristic analysis can not be carried out.
For high power device, although be referred in existing standard can by increase still air chamber volume,
The mode for increasing test space carries out high power device so that variation of ambient temperature is unobvious comparatively fast to reach thermal balance
Thermal characteristics test.But existing literature does not provide the specific corresponding relationship of power Yu chamber volume, and practical operation is difficult to reality
It is existing；Secondly, the limitation of tested equipment size, it is impossible to the unlimited volume for increasing still air chamber.For example, for being less than
The volume of the device of 3W, still air chamber is generally 0.0283m3(cube that side length is 30.48cm)；As measurement 100W
COB when, even if the volume of still air chamber is also required to about 27m by increasing in proportion3The cube of 3m (side length be) very
To more greatly, on the one hand, the cabinet of such large volume, cross-ventilation is serious, is unable to satisfy the requirement of still air environment；Another party
Face, still air chamber add other corollary equipments, entire test macro it is bulky, and heat balance time also compared with
Long, user is generally difficult to receive.
【Summary of the invention】
In view of the above shortcomings of the prior art, the present invention is intended to provide a kind of thermal resistance analysis method, this method are innovative
Ground proposes that high power device can be realized under the premise of not changing the volume of still air chamber in quasi- thermally equilibrated concept
Quick, the accurate analysis of thermal resistance information, can be widely applied to various high power devices thermal characteristics test, have efficiently, quickly,
The features such as applied widely.
The invention is realized by the following technical scheme：
A kind of thermal resistance analysis method, which is characterized in that including measured device, the reference point of measured device is selected, initial
Change the input power of measured device heat source, the heat source temperature and reference point temperature of Simultaneous Monitoring measured device under thermal equilibrium state
Degree reaches quasi- thermal equilibrium state, before measurement reaches quasi- thermal equilibrium state until the temperature difference of heat source and reference point reaches stable
Heat source and reference point temperature and corresponding input power, according to heat source temperature, reference point temperature and the input work measured
Rate data obtain the thermal resistance information of each component part in measured device by calculating.
In the present invention, initial thermal equilibrium state refers to that high power device changes the thermal equilibrium state before input power；Final state
Thermal equilibrium state refers to that high power device changes the thermal equilibrium state reached after input power；Quasi- thermal equilibrium state refers to big function
Rate device change input power after, before final state thermal balance, and its heat source and the stable state of the reference point temperature difference, thus high-power device
Part reaches the time of quasi- thermal equilibrium state, and the time for reaching quasi- thermal equilibrium state in many cases, will substantially reach less than it
The final state thermally equilibrated time.
The applicant is had found by many experiments, in the apparent situation of variation of ambient temperature, such as high power device position
In in the still air chamber of limited size, although the entire test macro of high power device is relatively inaccessible to final state thermal balance shape
State, but the heat source of high power device and the temperature difference of a certain specified reference point only need the short period that can stablize, that is, reach quasi-
Thermal equilibrium state, quasi- thermal equilibrium state refer to：Temperature changing trend from heat source to reference point is identical, i.e., the temperature in specified region
Degree difference is stablized.For needing entire measurement test macro to reach the traditional analysis of final state thermal equilibrium state, due to
Quasi- thermal equilibrium state only needs temperature difference to stablize, and it is flat that high power device generally only can reach quasi- heat in a relatively short period of time
Weighing apparatus state can be only achieved final state thermal equilibrium state using the long period.That is, quasi- thermal equilibrium state is to reach final state
The pilot process of thermal equilibrium state, high power device reach the quasi- thermally equilibrated stable time and are less than it to reach final state thermally equilibrated steady
It fixes time, therefore, compared to traditional analysis, which can substantially shorten the thermal resistance analysis time of high power device,
Improve testing efficiency.
Quasi- thermal equilibrium state includes two states, and it is identical and poor with the variation tendency of reference point temperature that one is heat source temperatures
It is worth stable state；Another kind is that the heat source temperature and reference point temperature reach stable state.The former is high-power
The typicalness of device, in actual test, most of high power device is in the state.In quasi- thermal equilibrium state
Under, the temperature difference of heat source and reference point reaches stable, and the thermal resistance information from heat source to reference point is basicly stable, the part thermal resistance
The contribution of the thermal resistance information of measured device entirety has can be neglected in information, i.e. the thermal resistance information master from heat source to reference point
On heat source temperature, reference point temperature and input power data before depending on quasi- thermal equilibrium state, after stablizing the moment
In heat conduction time, the variation of thermal resistance information is mainly contributed by reference point to infinitely great heat sink thermal resistance information.Therefore, it uses
Quasi- thermal equilibrium state analyzes the thermal resistance information from thermal resistance to reference point, both significantly reduces time of measuring, also ensures measurement
Accuracy.
Heat source in the present invention can be device and realize the essential a part of itself function, as the inside group of device
At being also possible to the external heating element being arranged exclusively for test such as the PN junction of LED.Heat source input power in the present invention
Change can be from certain input power to another constant input power, such as from zero input power to a certain input power or from
A certain relatively high power changes to a certain lesser input power（Even zero input power）；In addition, input power is at any time
Variation, such as from zero input power according to certain pre-defined rule（As slope is fixed）The input power continued to increase, or according to
Certain subscribes the input power that rule persistently reduces.The temperature of heat source and reference point can be through direct temperature sensor and survey
Amount, is also possible to measure by the intrinsic temperature characterisitic of measured device itself, for example, measured device is LED, it is available
The junction voltage of its PN junction measures the temperature of PN junction.
To sum up, technical solution disclosed by the invention, suitable for the accurate analysis of the apparent thermal resistance information of variation of ambient temperature,
Under the premise of the size and not extended testing system time for not changing still air chamber, realize high power device from heat source to
The accurate analysis of reference point thermal resistance information can be widely applied to the thermal characteristics test of various high power devices, have accurate, high
The features such as imitating, be quick, applied widely.
The present invention can be further perfect by the following technical programs.
Preferably, establishing measured device from heat source to infinitely great heat sink heat conduction model, according to acquisition measured device
The thermal resistance information of each component part further calculates the thermal resistance structure function for obtaining measured device, the thermal resistance structure function
Including differential structrue function and integral structure function.Currently, thermal resistance structure function is the common expression side of thermal resistance analysis result
Formula, thermal resistance structure function refer to the accumulation thermal capacitance on heat source to heat flow path at each point with the delta data of accumulation thermal resistance, integral
Structure function is to accumulate thermal capacitance with the variation relation of accumulation thermal resistance, and differential structrue function is integral structure function to accumulation thermal resistance
First derivative.The accumulation thermal capacitance be heat source to heat flow path each point the sum of thermal capacitance, the accumulation thermal resistance be heat source extremely
The sum of the thermal resistance of heat flow path each point.The thermal resistance information of each component part of the measured device of acquisition can be transient thermal resistance, described
Transient thermal resistance refers to the ratio between heat source and the temperature difference and input power of reference point, as described above, it is flat to can get quasi- heat
Transient thermal resistance change curve before weighing apparatus state, after reaching quasi- thermal equilibrium state, the thermal resistance structure from heat source to reference point is to wink
The contribution of state thermal resistance change curve can be neglected, i.e., the thermal resistance structure information from heat source to reference point mainly embodies a concentrated reflection of
On transient thermal resistance change curve before quasi- thermal equilibrium state, stablizing in the heat conduction time after the moment, transient thermal resistance variation is bent
The variation of line is mainly contributed by reference point to infinitely great heat sink thermal resistance structure information；Changed according to above-mentioned transient thermal resistance bent
Line establishes high power device from heat source to infinitely great heat sink heat conduction model, calculates the thermal resistance structure letter of high power device
Number.
As described in the background section, the influence of environment temperature will cause and can not differentiate below appearance on thermal resistance differential structrue function
Peak and valley structure, can accurately differentiate position of the reference point on thermal resistance structure function by the following technical programs.It is examined according to synchronous
The temperature change of resulting heat source and reference point is surveyed, the steady state heat resistance between heat source and reference point is obtained, is based on the steady state heat resistance
The sub- heat conduction model from heat source to reference point is marked off on above-mentioned heat conduction model, the heat conduction model includes n (n>
1) a heat transmission unit, the sub- heat conduction model include m (1≤m<N) a heat transmission unit.This method innovatively will be steady
State thermal resistance introduces thermal resistance analysis, utilizes " voltage divider principle " by heat conduction model " truncation ", to accurately mark off from heat source to ginseng
The thermal resistance structure of examination point improves thermal resistance analysis accuracy convenient for reference point is accurately positioned；In combination with the flexible choosing of reference point
It selects, it can be achieved that customizing the accurate analysis of region thermal resistance structure.For example, high power device be COB, including PN junction, metal substrate,
Aluminum substrate and the contact interface between them, if desired analysis PN junction, then can be by reference point to the thermal resistance structure of metal substrate
It is selected in metal substrate bottom end；If desired reference point can be then selected in aluminum substrate bottom end to the thermal resistance structure of aluminum substrate by analysis PN junction.
According to specific thermal resistance analysis method, obtain different at the time of steady state heat resistance.In temperature-rise period, the stable state
Thermal resistance is to be reached at the time of quasi- thermal equilibrium state corresponds to obtain according to the temperature difference in heat source and reference point, i.e., in temperature-rise period
In, after certain thermal power is inputted to high power device, heat source and reference point constant temperature rise, until the temperature difference of the two reaches
Stablize, calculates at this time from heat source to the ratio of the reference point temperature difference and thermal power, the as steady state heat resistance of temperature-rise period；And cooling down
In the process, the steady state heat resistance is that the temperature being under initial thermal equilibrium state according to the heat source and reference point of synchronous detection obtains
, the thermal power of high power device is removed, high power device radiates to ambient enviroment, calculates heat source and the reference of initial time
The ratio of the temperature difference of point and the thermal power removed, the as steady state heat resistance of temperature-fall period.
It should be pointed out that, according to traditional calculation method, steady state heat resistance need to wait until heat source and reference for temperature-rise period
Point reaches final state thermal equilibrium state, " voltage divider principle " could be utilized heat conduction model " truncation ", but due to high power device
Final state heat balance time is grown very much or even certain high power devices are unable to reach final state thermal balance.The present invention innovatively introduces
The concept of quasi- thermal equilibrium state, in the case where high power device reaches the quasi- thermal equilibrium state before final state thermal equilibrium state i.e. by heat transfer
Model " truncation ", from the point of view of theory analysis and realistic simulation result (specific visible embodiment 1), the technical solution is not only big
Width shortens the thermal resistance analysis time, and ensures the accuracy of thermal resistance analysis result.
In above technical solution, since sub- heat conduction model is formed by heat conduction model " truncation ", compared to heat transfer
Model, sub- heat conduction model has less heat transmission unit, and heat transmission unit is the basic unit of thermal resistance structure, heat transfer
Element number is more, and the thermal resistance structure on heat conduction path is divided thinner, and the thermal resistance structure function of acquisition is more accurate；Instead
It, heat transmission unit quantity is fewer, the thermal resistance structure relative coarseness of acquisition.To solve the above problems, the applicant further will
Sub- heat conduction model carries out inverse transformation, to reconstruct sub- transient thermal resistance change curve, establishes further according to sub- transient thermal resistance change curve
Including n (n>1) heat conduction model of a heat transmission unit obtains thermal resistance structure function more accurate from heat source to reference point.
There will be the sub- conduction model of less heat transmission unit to carry out inverse transformation and reconstruct, establish the heat with more heat transmission unit
Conduction model, so that thermal resistance structure function is more accurate.The technical solution carries out the sub- heat conduction model after " truncation "
Inverse transformation and reconstruct increase the quantity of heat transmission unit on the heat conduction path from heat source to reference point, that is, increase thermal resistance
Structural resolution improves the accuracy of thermal resistance structure analysis.
The temperature difference of the heat source and reference point reaches stable, refers to that the difference/change rate/difference change rate of the two is small
In corresponding given value.I.e. by giving stable condition, the temperature changing process of real-time monitoring heat source and reference point, when two in advance
Temperature gap/change rate of person/difference change rate meets given stable condition, that is, can determine whether to reach stable, when obtaining stable
Between before transient thermal resistance change curve, the thermal resistance structure letter of high power device is calculated further according to transient thermal resistance change curve
Number.
In the present invention, corresponding reference point can be selected according to concrete case, the reference point is located at high power device
On shell or be located at surrounding air in or other specified points.For example, reference point can be selected in its device for COB device
On shell, to investigate the thermal resistance structure from PN junction to shell；For adding the COB device of radiator, reference point can be selected in
On radiator, to investigate the thermal resistance structure from PN junction to radiator；Or reference point is selected in the sky of still air chamber
In gas, and the reference point should use up appropriate separate high power device, to investigate the thermal resistance structure of air in from PN junction to chamber.Always
It, can be according to concrete case and demand come the flexible position for determining reference point, to analyze corresponding thermal resistance structure range.
Preferably, the input power curve of the measured device is the thermal power curve for heat production.Measured device
Type it is varied, for some devices after input electric power, electrical power is completely used for heat production, i.e., when the measured device is
Pure thermal power device, the input power curve and input electric power curve identical；Some devices are after input electric power, electricity
Power a part is used for heat production, and a part is used to shine, such as light emitting diode, i.e., the measured device is light luminous power
Device, at this point, the input power curve is the difference of input electric power curve and dissipation thermal power curve.
In conclusion introducing heat source and ginseng the invention discloses a kind of thermal resistance analysis method suitable for high power device
High power device customization can be realized in the stable quasi- thermal equilibrium state determination method of examination point temperature difference within the shorter testing time
The accurate analysis of region thermal resistance structure, and no need to increase the volumes of still air chamber, are applicable to various high power devices
Thermal resistance information analysis, have the characteristics that efficient, quick, applied widely；It simultaneously can also be according to the steady state thermal under different moments
The position of reference point on thermal resistance structure function is accurately positioned in resistance；In addition, in conjunction with the side such as inverse transformation and reconstruct transient thermal resistance curve
Case can effectively increase thermal resistance structure resolution ratio, further increase the accuracy of thermal resistance structure analysis.
【Detailed description of the invention】
Attached drawing 1 is the structural schematic diagram of the high power device of embodiment 1；
Attached drawing 2 is the heating curve comparison diagram of the heat source of embodiment 1, reference point, heat source and reference point difference；
Attached drawing 3 is the thermal resistance differential structrue function comparison schematic diagram of traditional analysis and embodiment 1；
Attached drawing 4 is " truncation " schematic diagram of the sub- heat conduction model of embodiment 2；
Attached drawing 5 is the thermal resistance differential structrue function of four-layer structure object in embodiment 2；
Attached drawing 6 is the thermal resistance differential structrue function of six layer structure object in embodiment 2；
Attached drawing 7 is the thermal resistance differential structrue function comparison schematic diagram of traditional analysis and embodiment 1.
【Specific embodiment】
Embodiment 1
Present embodiment discloses a kind of thermal resistance analysis method, the test object of the embodiment is include six layer structure big
Power device 1 is denoted as first layer 1-1, second layer 1-2, third layer 1-3, the 4th layer of 1-4, layer 5 1-5 and layer 6 1- respectively
6, as shown in Figure 1, its material parameter is shown in Table 1.
The parameter of high power device six layer structure in 1 embodiment 1 of table
| A=1mm2 | λ[W/m.k] | ρ[g/cm3] | c[J/gK] | d[mm] | R[K/W] | C[J/K] |
| 1-1 | 148 | 2.33 | 0.7 | 0.2 | 1.351 | 3.262×10-4 |
| 1-2 | 1.6 | 3.8 | 0.48 | 0.05 | 31.25 | 9.12×10-5 |
| 1-3 | 350 | 8.89 | 0.385 | 1 | 2.85714 | 3.423×10-3 |
| 1-4 | 0.73 | 2.8 | 1 | 0.03 | 41.0959 | 8.4×10-5 |
| 1-5 | 180 | 27 | 0.963 | 1 | 5.5556 | 0.026 |
| 1-6 | 0.18 | 1.18 | 1.424 | 0.05 | 277.78 | 8.4016×10-5 |
The heat source 2 of the high power device 1 is located at first layer 1-1, and reference point 3 is selected in the 4th layer of bottom 1-4.When test, give
High power device 1 inputs thermal power △ PH, high power device 1 starts to warm up, it is ensured that the sampling time sequence and reference point of 2 temperature of heat source
The sampling time sequence of 3 temperature strictly keeps synchronous, with the heat source temperature T of Simultaneous Monitoring high power device 1j(t) and reference point temperature TC
(t), until the temperature difference of heat source 2 and reference point 3 reaches stable, that is, reach quasi- thermal equilibrium state, the heating for recording heat source 2 is bent
Line obtains the transient thermal resistance change curve before stablizing the moment according to heating curve；According to transient thermal resistance change curve, builds and render outstanding service
For rate device 1 from heat source 2 to infinitely great heat sink heat conduction model, heat conduction model as described in Figure includes n (n>1) height heat passes
Lead unit；The thermal resistance structure function of device is accurately obtained according to above-mentioned heat conduction model, thermal resistance structure function includes differential structrue
Function and integral structure function.
The obvious technical effects of the technical solution, as shown in Fig. 2, the applicant is respectively compared under identical restrictive condition
The stabilization time of monitoring heat source temperature, reference point temperature and heat source and the reference point temperature difference, the results are shown in Table 2.
The stabilization time under the conditions of 2 different decision of table
| Project | Stablize time (s) |
| Heat source temperature Tj(t) | 137.4806 |
| Reference point temperature TC(t) | 142.5200 |
| Heat source and reference point temperature difference Tj(t)-TC(t) | 97.6590 |
As can be seen from the table, Tj(t)-TC(t) compare Tj(t) reach stabilization and want fast 40s or so, stablize the three of the time close to total
/ mono-.By Tj(t) it is truncated at 97.6590s, obtained thermal resistance differential structrue functional arrangement and comparison when not being truncated originally are such as
Shown in Fig. 3.It is seen that influence of the truncation to final result is smaller at 97.6590s, but save one third
Time.Therefore, which can be greatly reduced the testing time under the premise of not reducing thermal resistance analysis accuracy, improve
Testing efficiency.
Embodiment 2
It is similar to Example 1 present embodiment discloses a kind of thermal resistance analysis method that heat source and reference point temperature are stable,
The test object of the embodiment is also the high power device 1 for including six layer structure, be denoted as respectively first layer 1-1, second layer 1-2,
Third layer 1-3, the 4th layer of 1-4, layer 5 1-5 and layer 6 1-6, the material of the layer 6 of the present embodiment different from embodiment 1
Parameter is different from embodiment 1, and material parameter is shown in Table 3.
The parameter of high power device six layer structure in 3 embodiment 2 of table
| A=1mm2 | λ[W/m.k] | ρ[g/cm3] | c[J/gK] | d[mm] | R[K/W] | C[J/K] |
| 1 | 148 | 2.33 | 0.7 | 0.2 | 1.351 | 3.262×10-4 |
| 2 | 1.6 | 3.8 | 0.48 | 0.05 | 31.25 | 9.12×10-5 |
| 3 | 350 | 8.89 | 0.385 | 1 | 2.85714 | 3.423×10-3 |
| 4 | 0.73 | 2.8 | 1 | 0.03 | 41.0959 | 8.4×10-5 |
| 5 | 180 | 27 | 0.963 | 1 | 5.5556 | 0.026 |
| 6 | 0.18 | 1.18 | 1.424 | 0.05 | 277.78 | 8.4016×10-5 |
Similar to Example 1, the heat source 2 of the high power device 1 is located at first layer 1-1, and reference point 3 is selected in the 4th layer of 1-4
Bottom.When test, thermal power △ P is inputted to high power device 1H, high power device 1 starts to warm up, it is ensured that 2 temperature of heat source is adopted
Sample timing strictly keeps synchronous with the sampling time sequence of 3 temperature of reference point, with the heat source temperature T of Simultaneous Monitoring high power device 1j
(t) and reference point temperature TC(t), until the temperature of heat source 2 and reference point 3 reaches stable, the two temperature difference is zero, that is, is reached
Quasi- thermal balance.The technical solution passes through the heat source temperature and reference point temperature of high power device when combining quasi- thermal balance, obtains big
The steady state heat resistance of the quasi- thermal equilibrium state of power device utilizes " voltage divider principle " by heat conduction model " truncation ", i.e., in heat transfer mould
The sub- heat conduction model from heat source to reference point is marked off in type, which includes m (1≤m<N) a heat transfer list
Member, as shown in figure 4, convenient for reference point is accurately positioned, improving thermal resistance to accurately divide the thermal resistance structure from heat source to reference point
Accuracy of analysis；Flexible choice in combination with reference point is, it can be achieved that customize the accurate analysis of region thermal resistance structure.
The applicant simulate respectively high power device with four-layer structure, six layer structure high power device and
Using the thermal resistance structure function of the technical program four-layer structure that " truncation " comes out from six layer structure, the technical solution is demonstrated
With good technical effect.It should be pointed out that the material ginseng with four-layer structure high power device of the present embodiment simulation
Number is identical with the preceding four layer materials parameter of six layer structure high power device.
Theoretically, since the preceding four-layer structure of two high power devices is completely the same, then thermal resistance structure function both
Should be consistent, the difference of the two should be in last two layers of embodiment of six layer structure.To high-power with four-layer structure and six layer structure
Device carries out practical thermal resistance analysis, and the differential structrue function difference of the two is as shown in Figure 5 and Figure 6, and two figures of comparison can be seen that, two figures
In, the thermal resistance resistance value size at the first two peak is almost the same, and six layer structure has more a peak compared with the differential structrue function of four-layer structure,
This is consistent with theoretical analysis result, and the corresponding thermal resistance structure of the first two peak valley of Fig. 5 and Fig. 6 should be the tributes of preceding four-layer structure institute
It offers, and the corresponding thermal resistance structure of third peak valley in Fig. 6 should be that latter two layers of six layer structure is contributed.
The present invention carries out thermal resistance analysis, heat source temperature and ginseng when according to quasi- thermal balance to the high power device of six layer structure
Heat conduction model with n heat transmission unit is divided into m (m by examination point temperature<N) the son heat of a heat transmission unit passes
Guided mode type only retains the thermal resistance structure information from heat source to reference point that is, by heat conduction model " truncation "；According to the sub- guided modes
Type obtains the thermal resistance structure function from heat source to reference point.
As shown in fig. 7, comparing four-layer structure high power device, six layer structure high power device and from six layer structure
The differential structrue function for the four-layer structure that " truncation " comes out, it can be seen that using the differential for the four-layer structure that " truncation " method obtains
Structure function is almost consistent with the differential structrue function of ideal four-layer structure, i.e., the technical solution can accurately obtain from heat source to
The thermal resistance structure function of reference point.
Claims (10)
1. a kind of thermal resistance analysis method, which is characterized in that including measured device, the reference point of measured device is selected, in initial heat
The input power of change measured device heat source under equilibrium state, the heat source temperature and reference point temperature of Simultaneous Monitoring measured device,
Until the temperature difference of heat source and reference point reaches stable, that is, reach quasi- thermal equilibrium state, before measurement reaches quasi- thermal equilibrium state
The temperature and corresponding input power of heat source and reference point, according to heat source temperature, reference point temperature and the input power measured
Data obtain the thermal resistance information of each component part in measured device by calculating.
2. thermal resistance analysis method as described in claim 1 establishes measured device from heat source to infinitely great heat sink heat transfer mould
Type further calculates the thermal resistance structure function for obtaining measured device according to the thermal resistance information for obtaining each component part of measured device,
The thermal resistance structure function includes differential structrue function and integral structure function.
3. thermal resistance analysis method as claimed in claim 2, which is characterized in that detect resulting heat source and reference point according to synchronous
Temperature change, obtain the steady state heat resistance between heat source and reference point, drawn on above-mentioned heat conduction model based on the steady state heat resistance
The sub- heat conduction model from heat source to reference point is separated, the heat conduction model includes n heat transmission unit, the son heat
Conduction model includes m heat transmission unit, wherein n>1,1≤m<n.
4. thermal resistance analysis method as claimed in claim 3, which is characterized in that in temperature-rise period, the steady state heat resistance is
According to what is obtained when the temperature difference of heat source and reference point reaches quasi- thermal equilibrium state；In temperature-fall period, the steady state heat resistance
It is that the temperature being under initial thermal equilibrium state according to the heat source and reference point of synchronous detection obtains.
5. thermal resistance analysis method as claimed in claim 3, which is characterized in that sub- heat conduction model is carried out inverse transformation, with weight
Structure transient thermal resistance change curve establishes the heat transfer mould including n heat transmission unit further according to sub- transient thermal resistance change curve
Type obtains the thermal resistance structure function from heat source to reference point, wherein n>1.
6. thermal resistance analysis method as described in claim 1, which is characterized in that the quasi- thermal equilibrium state includes heat source temperature
Identical and stable difference state or heat source temperature and reference point temperature reach stable with the variation tendency of reference point temperature
State.
7. thermal resistance analysis method as described in claim 1, which is characterized in that the measured device reaches quasi- thermal equilibrium state
Time, reach the final state thermally equilibrated time less than it.
8. the thermal resistance analysis method as described in claim 1 or 6 or 7, which is characterized in that the temperature of the heat source and reference point
Difference reaches stable, and the difference or change rate or difference change rate both referred to is less than corresponding given value.
9. thermal resistance analysis method as described in claim 1, which is characterized in that the reference point is located at the shell of measured device
It is upper or be located in surrounding air or other specified points.
10. thermal resistance analysis method as described in claim 1, which is characterized in that the input power of the measured device is to use
In the thermal power curve of heat production.
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| CN107562978B (en) * | 2017-07-05 | 2020-12-29 | 上海交通大学 | Thermal impedance topology and thermal power filter |
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| CN102116829A (en) * | 2010-12-21 | 2011-07-06 | 杭州远方光电信息股份有限公司 | Method and device for measuring thermal resistance of diode |
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| CN103472088A (en) * | 2013-08-13 | 2013-12-25 | 杭州远方光电信息股份有限公司 | Thermal resistance analysis method |
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| US6939036B2 (en) * | 2003-11-04 | 2005-09-06 | Certainteed Corporation | Temperature-expansion indicator for siding panels |
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| JPS5835452A (en) * | 1981-08-27 | 1983-03-02 | Rigaku Denki Kk | Measurement of thermal diffusivity |
| CN101490573A (en) * | 2006-06-19 | 2009-07-22 | Mrl工业公司 | High accuracy in-situ resistance measurements methods |
| CN102116829A (en) * | 2010-12-21 | 2011-07-06 | 杭州远方光电信息股份有限公司 | Method and device for measuring thermal resistance of diode |
| CN202119874U (en) * | 2010-12-21 | 2012-01-18 | 杭州远方光电信息股份有限公司 | Measure apparatus of diode thermal resistance |
| CN102768225A (en) * | 2012-08-07 | 2012-11-07 | 南京理工大学 | High-accuracy method for testing thermal interface material |
| CN103472088A (en) * | 2013-08-13 | 2013-12-25 | 杭州远方光电信息股份有限公司 | Thermal resistance analysis method |
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