CN103472088B - Thermal resistance analysis method - Google Patents

Thermal resistance analysis method Download PDF

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CN103472088B
CN103472088B CN201310351643.6A CN201310351643A CN103472088B CN 103472088 B CN103472088 B CN 103472088B CN 201310351643 A CN201310351643 A CN 201310351643A CN 103472088 B CN103472088 B CN 103472088B
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thermal
heat
thermal resistance
conduction component
measurand
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CN103472088A (en
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潘建根
陈聪
黄艳
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Hangzhou Everfine Photo E Info Co Ltd
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Hangzhou Everfine Photo E Info Co Ltd
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Priority to DE112013006620.3T priority patent/DE112013006620T5/en
Priority to PCT/CN2013/090321 priority patent/WO2015021726A1/en
Priority to US14/775,127 priority patent/US10094792B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity

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Abstract

The invention provides a thermal resistance analysis method. By establishing a heat conduction mathematical model of a measured object, and carrying out two-way solution and analysis of the heat conduction mathematical model based on heat source temperature measurement data and thermal model parameters, analysis errors caused by temperature measurement errors can be effectively reduced, also the thermal resistance of a measured object contact interface and the thermal resistance distribution in each thermal conduction component can be accurately acquired, thus realizing accurate and quantitative analysis of a measured object thermal resistance structure and comprehensive evaluation of the internal thermal contact situation of the whole measured object, and providing important basis for improving the heat dissipation design of LED and other devices. The analysis method has the characteristics of simplicity, high accuracy, fast speed, and wide application scope, etc.

Description

A kind of thermal resistance analysis method
[technical field]
The present invention relates to thermal characteristics field tests, be specifically related to a kind of thermal resistance analysis method.
[background technology]
Current heat management has become the hot issue in all kinds of device application field, and the heat dissipation characteristics of device directly affects the characteristics such as its optics, electricity, color and life-span; Thermal resistance weighs the important indicator of device heat dispersion, and thermal resistance structure is the important evidence of thermo-contact effect and components interior heat transfer defect between each parts of analysis device accurately.
Although also there is the analytical approach of some thermal resistance structures at present, but existing methodical analysis result only based on measurand temperature data and obtain, impact by temperature measurement accuracy is larger, accuracy is not high, and accurately can not obtain the thermal resistance of each heat-conduction component of device, thus accurately can not judge the problem such as heat dissipation characteristics and inherent vice of each heat-conduction component.
What is more important, existing thermal resistance analysis method cannot obtain the thermal resistance of contact interface between each heat-conduction component.Between each heat-conduction component, thermo-contact is bad, then the thermal resistance of contact interface will significantly increase, and therefore, the thermal resistance of contact interface is the important evidence judging device thermo-contact situation, is also the key character parameter of carrying out device heat dissipation design and heat management improvement simultaneously.But in thermal resistance structure measurement and analytic process, the thermal resistance of contact interface is by the character of surface of each heat-conduction component or the impact of articulamentum itself, as contact interface thickness be difficult to determine, each diversity etc. of articulamentum out-of-shape, heat-conduction component surface of contact material, generally be difficult to measurement determine, thus the thermo-contact effect between each parts of device cannot be judged accurately, objectively, the heat dissipation characteristics improving device to manufacturer and deviser causes obstacle.
[summary of the invention]
For overcoming the deficiencies in the prior art, the invention provides a kind of thermal resistance analysis method, by introducing the thermal modeling parameter of measurand, and its temperature variation data with measurand Mathematics Model and thermal source is combined, obtain the thermal resistance of contact interface between each heat-conduction component of measurand, there is the features such as analytical approach is reliable, accuracy is high, applied widely.
For solving the problems of the technologies described above, present invention employs following technical scheme:
A kind of thermal resistance analysis method, it is characterized in that, measurand comprises thermal source and each heat-conduction component, utilizes the thermal modeling parameter of the temperature variation data of thermal source and each heat-conduction component, analyze the thermal resistance of contact interface between each heat-conduction component of measurand, comprise the following steps:
A (), to after thermal source power input, measures the temperature data over time of thermal source; ;
B () sets up the Mathematics Model of measurand, determine thermal resistance on the temperature and time of thermal source, heat flow path and
Funtcional relationship between thermal capacitance; And solve this funtcional relationship according to the temperature variation data of thermal source in (a) step, obtain quilt
Survey the distributed data of thermal capacitance and thermal resistance on object heat flow path;
C () calculates each heat-conduction component according to the size of direction of heat flow, each heat-conduction component and intrinsic thermal characteristic parameter thereof
Thermal modeling parameter, comprise thermal capacitance value and thermal resistance value;
D (), by the thermal modeling parameter comparative analysis of the distributed data of thermal capacitance and thermal resistance on measurand heat flow path and each heat-conduction component, obtains the thermal resistance of contact interface between each heat-conduction component.
In the present invention, the thermal source of measurand is directly heat production/evolution of heat or input external heat power and heat production/evolution of heat indirectly by input external electric power.Such as, when measurand is LED, the pn of its inside becomes its thermal source, and the certain electric power of pn knot input can directly heat production; Or as certain device, itself inner parts without generates its own heat, inputs certain thermal power to it, the specified parts or given side that directly input external heat power can be considered as the thermal source of this device.In addition, the relative position of thermal source and more than one heat-conduction component also can be arranged flexibly, and thermal source can be built in a certain heat-conduction component, or thermal source and each heat-conduction component are all the absolute construction in measurand.Such as, for semiconductor devices LED, thermal source is the one or more pn knots in its chip.
Before heat source temperature is measured, input certain power to thermal source, described power can be the electric power of outside input or the thermal power inputted by outside supplying heat source.Outside input electric power can be constant value, or is zero; Outside supplying heat source can be constant temperature input source, or the thermal power that outside supplying heat source inputs is a constant value, or the thermal power that outside supplying heat source inputs is zero.The temperature variation data of thermal source can record in its temperature-rise period, such as, after applying certain heating power to thermal source, measures the transient temperature of thermal source, until thermal source reaches thermal equilibrium; The temperature of thermal source also can record in its temperature-fall period, such as, to thermal source input external heat power, reach uniform temperature and after thermal equilibrium, removed by external heat power, now the input thermal power of thermal source is zero, and thermal source starts cooling, measure the transient temperature of thermal source, until it reaches new thermal equilibrium.
In the present invention, the heat on thermal source take thermal source as heat transfer starting point, and the heat flow path formed along the contact interface between each heat-conduction component and each heat-conduction component makes heat transfer.In heat transfer process, measurand tends to thermal equilibrium state gradually.In the thermally equilibrated process of trend, the thermal capacitance on the temperature and time of thermal source, heat flow path and thermal resistance are certain funtcional relationship.Accordingly, according to intensification or the temperature-fall period of thermal source, set up corresponding Mathematics Model, obtain the funtcional relationship of thermal capacitance on the temperature and time of thermal source, heat flow path and thermal resistance.
The described time is thermal source and starts to heat up or be cooled to it and reach each moment in thermal equilibrium process, and heat source temperature over time data all obtains in each moment measurement of this process.Described funtcional relationship then solves according to the temperature variation data of thermal source, obtains the thermal capacitance on heat flow path and thermal resistance distributed data.As preferably, change the time period faster at heat source temperature, improve the survey frequency of temperature, to obtain thermal source temperature information accurately, thus accurately solve above-mentioned funtcional relationship, obtain accurate thermal capacitance and thermal resistance distributed data on heat flow path.
Such as, for the light emitting diode shown in Fig. 1, its pn becomes thermal source, and the conductive structure that the contact interface between its each heat-conduction component and each heat-conduction component forms is regarded as one dimension heat flow path.To thermal source input constant electric power, then heat thermal source produced will take thermal source as starting point, and the one dimension heat flow path formed along the contact interface between each heat-conduction component and each heat-conduction component does the conduction of one dimension equivalent heat.Accordingly, set up CAUER model as shown in Figure 3, this model utilizes thermal capacitance and the heat resistance characteristic of n continuous micro_element on the individual limited RC loop analog measurand one dimension heat flow path of n, the C in each RC loop wiand R withe thermal capacitance value of each infinitesimal and thermal resistance value on corresponding measurand one dimension heat flow path, and each infinitesimal on one dimension heat flow path is corresponding in turn to each heat-conduction component on one dimension heat flow path and contact interface.Obtain the C in each RC loop of CAUER model wiand R wi, just can obtain the distributed data of thermal capacitance and thermal resistance on heat flow path.CAUER model obtains by setting up the FOSTER model solution shown in Fig. 4, is shown below:
T ( t ) = Δ P H Σ i = 1 n R thi · [ 1 - exp ( - t τ i ) ] ; τ i = C thi · R thi - - - ( 1 )
T (t)for thermal source is at the temperature variation of the relative initial time of t, Δ P hfor heating power.τ ifor time constant, C thiand R thifor the thermal capacitance in FOSTER model and thermal resistance.Above formula is in conjunction with the temperature data T at least n the moment of thermal source in trend thermal equilibrium process (t), converted by series of equivalent and deconvolution calculating, each C can be solved thiand R thivalue, and by FOSTER model conversion to corresponding CAUER model, obtain the C in each RC loop of CAUER model wiand R wi, namely obtain the distributed data of thermal capacitance on one dimension heat flow path and thermal resistance.By the thermal modeling parameter comparison of this distributed data and each heat-conduction component of measurand, can obtain the thermal resistance of the contact interface between each heat-conduction component, contact interface here refers to surface of contact between each heat-conduction component or articulamentum or clearance etc.
The thermal modeling parameter of heat-conduction component comprises its thermal resistance value and thermal capacitance value, can calculate acquisition according to the size of heat-conduction component, thermal characteristic parameter and direction of heat flow.As depicted in figs. 1 and 2, for light emitting diode, its thermal source is the pn knot in chip, chip, metal substrate, aluminium base etc. are heat-conduction component, its pn ties the heat produced and makes One-dimensional heat transfer along heat-conduction component, the thermal capacitance value of certain heat-conduction component and thermal resistance value can be determined according to the specific heat capacity of direction of heat flow, this part dimension, thermocontact area and this component materials and thermal conductivity, as follows:
C = ∫ 0 h cv · A ( x ) · dx - - - ( 2 )
R = ∫ 0 h 1 λ · A ( x ) · dx - - - ( 3 )
C is thermal capacitance; R is thermal resistance; H is the thickness of this heat-conduction component along One-dimensional heat transfer direction; A (x) is for being positioned on heat flow path with thermal source at a distance of the sectional area at x place; Cv and λ is respectively heat capacity at constant volume and the thermal conductivity of this heat-conduction component material.
In the present invention, the thermal resistance structure function of measurand can be obtained according to the thermal capacitance on heat flow path and thermal resistance distributed data, and the thermal modeling parameter of each heat-conduction component all can calculate acquisition according to (2) formula and (3) formula.According to obtained thermal modeling parameter, can in location structure function with the interval corresponding to each heat-conduction component, thus obtain the interval corresponding with the contact interface between each heat-conduction component, and obtain thermal capacitance value and the thermal resistance value of each contact interface according to the size in interval.
In the present invention, can calculate the thermal capacitance/thermal resistance ratio of each infinitesimal according to the thermal capacitance on heat flow path and thermal resistance distributed data, according to defined formula (2) and (3) of thermal capacitance and thermal resistance, the thermal capacitance/thermal resistance ratio of each infinitesimal should be:
C R = cv · λ · A 2 ( x ) - - - ( 4 )
For the homogeneous heat-conduction component of composition, the thermal capacitance that the thermal capacitance that this heat-conduction component obtains by (4) formula and thermal resistance ratio and its inner composition structural unit obtain by (4) formula and thermal resistance ratio should in certain deviation ranges.Therefore, according to the overall thermal capacitance/thermal resistance ratio of each heat-conduction component and the thermal capacitance/thermal resistance ratio of each infinitesimal, infinitesimal corresponding with each heat-conduction component on heat flow path can be determined.Due to each infinitesimal on heat flow path successively and continuously correspond to each heat-conduction component and contact interface, determine the infinitesimal that each heat-conduction component is corresponding, just can determine the infinitesimal corresponding with contact interface, and thermal resistance value (the thermal resistance sum of infinitesimal corresponding thereto).
Compared to prior art, the present invention is according to the material feature of each heat-conduction component of measurand, calculate and obtain its thermal modeling parameter accurately, and analysis that the thermal modeling parameter of each heat-conduction component and thermal resistance structure function are combined, from the thermal resistance distributed intelligence that thermal resistance structure function is shown, quantize the thermal resistance isolating each heat-conduction component and contact interface, achieve the accurate quantification analysis to measurand thermal resistance structure.The present invention is from the thermal modeling parameter two-way of thermal resistance structure function and measurand, with the material feature of measurand for foundation, not only overcome the unavailable defect of contact interface thermal resistance in prior art, and accurately can obtain thermal capacitance and the thermal resistance distributed intelligence of heat-conduction component inside, thus the thermo-contact effect of comprehensive accurately assay measurand inside and heat transfer defect, features such as having simply, efficient, accuracy is high, analysis speed is fast, be applied widely.
The present invention can be improved further by following technical characteristic and optimize:
In the present invention, according to the distributed data of the thermal capacitance on described heat flow path and thermal resistance, obtain the delta data of accumulation thermal capacitance with accumulation thermal resistance at each point place on thermal source to heat flow path, i.e. the thermal resistance structure function of measurand, comprises integration structure function and differential structrue function.Respectively as seen in figs. 6 and 8, integration structure function is the variation relation of accumulation thermal capacitance with accumulation thermal resistance, and differential structrue function is the first order derivative of integration structure function to accumulation thermal resistance for differential structrue function and integration structure function.Described accumulation thermal capacitance is the thermal capacitance sum of thermal source to heat flow path each point, and described accumulation thermal resistance is the thermal resistance sum of thermal source to heat flow path each point.In differential structrue function, using thermal source as heat transfer starting point, each heat-conduction component on the corresponding heat flow path of each spike difference, i.e. characteristic peak, the peak width of characteristic peak is determined by thermal resistance value, and the peak area of characteristic peak is determined by thermal capacitance value; In integration structure function, the width in the interval corresponding to each heat-conduction component is determined by the thermal resistance value of each heat-conduction component and/or thermal capacitance value.By the thermal modeling parameter compare of analysis of differential structrue function or integration structure function and each heat-conduction component, interval that can be accurately corresponding with each heat-conduction component in location structure function, and then obtain the interval corresponding with each contact interface, and obtain its thermal resistance value according to the size in interval.
As a kind of technical scheme, in differential structrue function, determine the characteristic peak corresponding to each heat-conduction component, according to peak width and the border, peak at its thermal resistance value determination character pair peak, the accumulation thermal resistance between the corresponding thermal source to heat-conduction component hot-fluid inputting interface of thermal resistance value of peak boundary or the accumulation thermal resistance between thermal source to heat-conduction component hot-fluid output interface.Characteristic peak on differential structrue function is corresponding with each heat-conduction component on measurand heat flow path successively, when each heat-conduction component of measurand homogeneous, with the peak coordinate of each heat-conduction component characteristic peak for mid point, marks border, peak equally spacedly; Or border, peak can obtain according to the existing empirical value of each heat-conduction component, such as, border, peak to peak value horizontal ordinate between distance (as 6:4) acquisition in certain proportion.When thermal source is positioned at the inside of a certain heat-conduction component, the characteristic peak corresponding to this heat-conduction component is first spike on thermal resistance structure function, and the border, peak using the starting point of structure function curve as its side, peak width is its thermal resistance value.
When there is multiple adjacent acromion in characteristic peak corresponding with heat-conduction component on measurand differential structrue function, should maximal point place is corresponding in interval corresponding with this heat-conduction component in function curve peak as its characteristic peak, to get rid of the interference that the factors such as its fault of construction are analyzed thermal resistance structure.The characteristic peak peak width of each heat-conduction component is determined by its thermal resistance value, and the two size is identical.The position on border, peak, both sides, then according to material behavior or the empirical method of each heat-conduction component, is determined based on peak width and peak.
As a kind of technical scheme, the border, peak of described characteristic peak is determined by peak width and peak area, when the difference of the thermal capacitance value of the peak area of specifying in peak width and heat-conduction component is positioned at the error range of setting, then determines the position on border, peak.In differential structrue function, the peak width of the characteristic peak corresponding to each heat-conduction component equals its thermal resistance value, and the peak area of characteristic peak should equal its thermal capacitance value.Therefore, fixing peak width, changes border, peak in some way, when the difference of the peak area of obtained characteristic peak and the thermal capacitance value of each heat-conduction component reaches minimum, determines the final position on border, peak.As preferably, in the interval that change is limited in centered by each characteristic peak peak, thermal resistance value is half width on border, peak, when the peak area of characteristic peak obtained and the thermal capacitance value of corresponding heat-conduction component closest to time, determine the position on border, peak.When thermal source is positioned at the inside of a certain heat-conduction component, the border, peak of the characteristic peak corresponding to this heat-conduction component, is the position at the starting point of structure function curve and horizontal ordinate place corresponding to its thermal resistance value.The thermal capacitance of each heat-conduction component and thermal resistance value are applied in differential structrue Functional Analysis process by this technical scheme simultaneously, can the border, peak at location feature peak more exactly, significantly improve the accuracy of analysis of contact interface thermal resistance.
As a kind of technical scheme, in integration structure function, determine the feature thermal capacitance value corresponding with each heat-conduction component, and determine its interval corresponding in integration structure function according to the thermal capacitance value of feature thermal capacitance value and each heat-conduction component.The point corresponding with the summit of heat-conduction component characteristic peak each in differential structrue function is found in integration structure function, namely the point of maximum curvature on one section of corresponding in integration structure function with each heat-conduction component curve, its heat history capacitance corresponding in integration structure function is the feature thermal capacitance value of each heat-conduction component.According to feature thermal capacitance value and the thermal capacitance value thereof of each heat-conduction component, the interval corresponding with each heat-conduction component can be determined in integration structure function.Interval position is determined by the material behavior of each heat-conduction component or empirical method.Such as, be illustrated in figure 8 a kind of integration structure function of light emitting diode, the uniform in material of each heat-conduction component of this light emitting diode, centered by its feature thermal capacitance value, be distance by the half of its thermal capacitance value, determine to also determine the interval that each heat-conduction component is corresponding on abscissa axis in the interval position that each heat-conduction component is corresponding on axis of ordinates simultaneously, and then obtain the interval corresponding with contact interface between each heat-conduction component, and obtain its thermal resistance value.
As a kind of technical scheme, the interval corresponding in integration structure function of each heat-conduction component is determined by the feature thermal capacitance value of each heat-conduction component, thermal capacitance value and thermal resistance value.Such as, integration structure function as shown in Figure 9, the width in the interval that each heat-conduction component is corresponding on axis of ordinates is its thermal capacitance value, and the width in interval corresponding on abscissa axis is its thermal resistance value.The interval width that fixing each heat-conduction component is corresponding on axis of ordinates, namely the distance in figure between each interval separatrix, and separatrix does the movement of certain intervals from bottom to top, as preferably, the interval marginal mobile restriction of ordinate is centered by feature thermal capacitance value, and each heat-conduction component thermal capacitance value is in the scope of width.When the interval size corresponding on abscissa axis of the curve obtained and this heat-conduction component thermal resistance value closest to time, then determine interval marginal position.
As a kind of technical scheme, comprising with measurand is the normal component of similar device, the differential structrue function of difference measurement standard device and measurand in identical test environment, according to the thermal resistance value between the heat transfer end of normal component and test environment, correct the peak of characteristic peak in measurand differential structrue function.The composition structure of normal component and thermal resistance structure are all known, and are similar devices with measurand.Normal component all records with the heat source temperature delta data of measurand in identical test environment, and as still air chamber, now, the heat transfer end of normal component and measurand should be identical with the thermal resistance of the contact interface between external environment.Such as, differential structrue function as shown in Figure 6 records in standard static air test case, and between the heat transfer end of measurand and air, the thermal resistance of contact interface is R16, and this thermal resistance should be identical with the thermal resistance of this contact interface of normal component.When the thermal resistance of this contact interface of normal component is known, on measurand differential structrue function, last characteristic peak P3 can correct according to this thermal resistance value, to avoid the error introduced in measuring process, makes analysis result more accurate.
Another kind of thermal resistance analysis method, it is characterized in that, measurand comprises thermal source and more than one heat-conduction component, set up the Mathematics Model of measurand, using the thermal modeling parameter of each heat-conduction component as restrictive condition, in conjunction with the thermal capacitance on the temperature variation data acquisition measurand heat flow path of thermal source and thermal resistance distributed data, thus directly obtain the thermal resistance of contact interface between each heat-conduction component, comprise the following steps:
A (), to after thermal source power input, measures the temperature data over time of thermal source;
B () calculates the thermal modeling parameter of each heat-conduction component according to the size of direction of heat flow, each heat-conduction component and intrinsic thermal characteristic parameter thereof, comprise thermal capacitance value and thermal resistance value;
C () sets up the Mathematics Model of measurand, determine the funtcional relationship between the thermal resistance of the temperature and time of thermal source, each infinitesimal and thermal capacitance;
D () is using the thermal modeling parameter of each heat-conduction component that the calculates restrictive condition as Mathematics Model, in conjunction with the time dependent temperature data of thermal source, the funtcional relationship of solution procedure (c), obtain the thermal capacitance on measurand heat flow path and thermal resistance distributed data, and directly obtain the thermal resistance of contact interface between each heat-conduction component.
With the thermal source of measurand for heat transfer starting point, contact interface between each heat-conduction component of measurand and each heat-conduction component is divided into continuous print limited heat transfer infinitesimal along heat flow path, and the temperature variation of measurand thermal source depends on thermal capacitance and the thermal resistance value of each heat transfer infinitesimal on heat flow path.Accordingly, the Mathematics Model corresponding with this heat transfer process can be set up.To determine the temperature and time of thermal source, funtcional relationship between the thermal capacitance of each infinitesimal and thermal resistance.In the technical program, each infinitesimal on heat flow path is corresponding with each heat-conduction component, a corresponding one or more continuous print infinitesimal of heat-conduction component, namely its thermal resistance value is the thermal resistance of an infinitesimal corresponding thereto or the thermal resistance sum of multiple continuous micro_element, and its thermal capacitance value is the thermal capacitance of an infinitesimal corresponding thereto or the thermal capacitance sum of multiple continuous micro_element.Therefore, determine the infinitesimal corresponding with each heat-conduction component, then in conjunction with the temperature variation data of thermal source, can based on temperature measuring data and thermal modeling parameter mixed method Mathematics Model, reduce the analytical error brought because of thermometric error, improve thermal resistance analysis accuracy.
Such as, for the light emitting diode shown in Fig. 1, its pn becomes thermal source, and the conductive structure that the contact interface between its each heat-conduction component and heat-conduction component forms is regarded as one dimension heat flow path.Input certain heating power to thermal source, then heat thermal source produced will take thermal source as starting point, and the one dimension equivalent heat flow path formed along the contact interface between each heat-conduction component and each heat-conduction component makes heat transfer.Accordingly, set up Mathematics Model as shown in Figure 3, this model utilizes n limited RC loop, the heat transfer infinitesimal that simulation measurand n is limited, the technical program using the thermal modeling parameter (i.e. its thermal capacitance value and thermal resistance value) of each heat-conduction component as restrictive condition, determine one or more RC loops corresponding thereto, its thermal resistance value is the thermal resistance in a RC loop corresponding thereto or the thermal resistance sum in multiple RC loop, and its thermal capacitance value is the thermal capacitance in a RC loop corresponding thereto or the thermal capacitance sum in multiple RC loop.To establish an equation group according to this restrictive condition and the temperature and time of above-mentioned thermal source, funtcional relationship between the thermal capacitance of each infinitesimal and thermal resistance, and according to the thermal modeling parameter solving equation group of the temperature variation data in thermal source trend thermal equilibrium process and each heat-conduction component, the R in each RC loop can be obtained wiand C wi, and according to the thermal resistance value of the infinitesimal corresponding with each contact interface and thermal capacitance value, thermal capacitance and the thermal resistance of each contact interface directly can be obtained.Or by the R in each RC loop wiand C wiobtain thermal resistance structure function, accumulation thermal capacitance in structure function obtains by the thermal capacitance value of each infinitesimal is cumulative successively, its heat history resistance obtains by the thermal resistance value of each infinitesimal is cumulative successively, determine the infinitesimal corresponding with each heat-conduction component, namely its one section of function curve corresponded in structure function is determined, then corresponding to each contact interface curve is also corresponding to be determined, and the thermal resistance value of each contact interface directly can read from structure function.
In the present invention, the thermal modeling parameter of each heat-conduction component can be the overall thermal capacitance of parts and thermal resistance that are obtained by (2) formula and (3) formula simulation calculation; Also can be thermal capacitance value and the thermal resistance value of each structural unit of heat-conduction component.Each heat-conduction component is divided into limited structural unit according to material characteristic along direction of heat flow, one or more heat transfer infinitesimals on the corresponding heat flow path of each structural unit, now, described thermal modeling parameter is geological information according to each heat-conduction component and material behavior, obtains thermal capacitance value and the thermal resistance value of each structural unit according to (2) formula and (3) formula simulation calculation.In the program, the infinitesimal number corresponding with each heat-conduction component should be not less than its structural unit number, each structural unit is corresponding with the infinitesimal of on one dimension heat flow path or the multiple infinitesimal of continuous print, to obtain the relation between the thermal capacitance of its thermal modeling parameter and corresponding infinitesimal and thermal resistance, in conjunction with the temperature variation data of thermal source, solve the above-mentioned system of equations set up according to Mathematics Model.By each conducting parts is separated into multiple structural unit, and simulation calculation is carried out to the thermal modeling parameter of each structural unit, not only can obtain thermal capacitance and the thermal resistance distributed intelligence of this heat-conduction component inside, by corresponding for an each structural unit infinitesimal, directly can also obtain thermal capacitance value and the thermal resistance value of each infinitesimal corresponding with this heat-conduction component, solving of above-mentioned system of equations is more prone to, accurate and efficiently.
Such as, when the out-of-shape of heat-conduction component or be composited by multilayer material, then can be divided into limited structural unit according to the border of its structure or composite bed, and according to the material characteristic of each structural unit, simulation calculation, obtains its thermal modeling parameter.Now, by corresponding for an each structural unit infinitesimal, remaining infinitesimal can distribute to each contact interface equably.If measurand is made up of two contact interfaces between three heat-conduction components and heat-conduction component, its hot-fluid road is divided into 60 infinitesimals, and above-mentioned three heat-conduction components are all divided into 10 structural units, corresponding with the first heat-conduction component is 1-10 infinitesimal, corresponding with the first contact interface is 11-25 infinitesimal, corresponding with the second heat-conduction component is 26-35 infinitesimal, what the second contact interface was corresponding is 36-50 infinitesimal, and corresponding with the 3rd heat-conduction component is 51-60 infinitesimal.Bring the thermal modeling parameter of each structural unit into Mathematics Model, and utilize the temperature variation data of thermal source to solve Mathematics Model, obtain the thermal resistance of each contact interface, significantly reduce calculated amount.
In the present invention, structural unit can be any shape unit that geological information is known, can be regular (as rectangular parallelepiped etc.), also can be irregular (as gengon etc.), or there are the domes of certain radian, as long as its thermal modeling parameter can according to (2) formula and (3) formula simulation calculation.
Above two kinds of inventive methods all can limit and perfect by the following technical programs further:
As a kind of technical scheme, in measurand heat source temperature measuring process, the heat transfer end of measurand or measurand is placed in natural convection environment or controllable constant-temperature environment.Environment residing for described heat transfer end not only will be stablized, and its heat absorption capacity should be not less than the environment residing for miscellaneous part.When measurand is positioned in natural convection environment, the temperature environment residing for the outside surface directly contacted with external environment is all identical, comprises the heat transfer end of measurand; When the heat transfer end of measurand is placed in controllable constant-temperature environment, its environment temperature can regulate and control in good time, makes it be not less than environment temperature residing for miscellaneous part.So not only can reduce the heat interchange on different directions that heat transfer end produces because of non-uniform temperature, heat can also be made to flow to each point of heat transfer end straight by thermal source, the heat transfer process supposed in convergence heat conduction model.In addition, the impact that stable temperature environment can also avoid the fluctuation of ambient temperature to measure measurand heat source temperature, many-sided accuracy of analysis improving structure function.As preferably, different components can select different temperature environments.
Such as, for the device of disc structure, as shown in figure 12, if the Mathematics Model of this device set up according to One-dimensional heat transfer theory, its thermal source is positioned at the center of circle, can be placed in still air chamber and test.Now, the circular edge of heat transfer end is similar to isothermal, heat by the extrorse each point of heat source stream, and to the calorie spread of edge any point close to One-dimensional heat transfer process.For the device of structure as shown in Figure 1, its thermal source can regard as the uniform heat transfer face of heat flow density, and be positioned at the upper surface of device, other ingredients regard as radiator structure, as shown in figure 13.If the Mathematics Model of this device set up according to One-dimensional heat transfer theory, this device can be placed on heat sink upper test.Now, device lower surface directly contacts with heat sink, approximate Isothermal Hot conducting surface, and heat flows to lower surface equably by upper surface, and direction of heat flow is all perpendicular to each heat transfer face, and its heat transfer process also levels off to One-dimensional heat transfer.Obtain the temperature data of thermal source under this condition, can accurately solve One-dimensional heat transfer mathematical model, obtain accurate thermal capacitance and thermal resistance distributed intelligence on heat flow path.
The present invention can also by arranging different temperature survey environment, to obtain the temperature data accurately solving and specify Mathematics Model.Such as, for the device shown in Figure 13, the one dimension heat flow path thermotropism conductive end conduction that the heat on its thermal source forms along its heat-conduction component and each contact interface, and heat transfer end be positioned over heat sink on.Now, can thereon in surface and spatial structure 4 side surfaces lay thermal insulation materials, reduce the heat interchange between other outside surface and environment beyond heat transfer end, make the heat transfer process of its inside as far as possible close to One-dimensional heat transfer, accurately to solve One-dimensional heat transfer mathematical model.
To sum up, the invention has the beneficial effects as follows: the analytic process thermal modeling parameter of each heat-conduction component being applied to measurand thermal resistance structure model and thermal resistance structure function, and based on temperature measuring data and thermal modeling parameter mixed method Mathematics Model, not only can effectively reduce the analytical error brought because of thermometric error, and can the thermal resistance of Obtaining Accurate measurand contact interface, and the thermal resistance distribution of each heat-conduction component inside, achieve the quantitative analysis of measurand thermal resistance structure, for the identification of measurand internal heat conduction defect provides important evidence.The method can be widely used in the thermal resistance analysis of various device, and as the semiconductor devices such as diode, triode, and analysis result can utilize similar normal component to correct, and has the features such as analytical approach is simple, accuracy is high, speed is fast, applied widely.
[accompanying drawing explanation]
Fig. 1 is a kind of composition schematic diagram of light emitting diode;
Fig. 2 is a kind of heat transfer schematic diagram of light emitting diode;
Fig. 3 is CAUER RC thermal modeling;
Fig. 4 is FOSTER RC thermal modeling;
Fig. 5 is the temperature-time curve that a kind of light emitting diode pn ties in temperature-rise period;
Fig. 6 is the schematic diagram of embodiment 1;
Fig. 7 is the schematic diagram of embodiment 2;
Fig. 8 is the schematic diagram of embodiment 3;
Fig. 9 is the schematic diagram of embodiment 4;
Figure 10 is the analysis process figure of embodiment 1 and embodiment 5;
Figure 11 is the schematic diagram of embodiment 5;
Figure 12 is a kind of heat transfer schematic diagram of device;
Figure 13 is the heat transfer schematic diagram of another kind of device;
1-heat-conduction component; 1-1-chip; 1-2-metal substrate; 1-3-aluminium base; 2-contact interface; 2-1-first contact interface; 2-2-second contact interface; 3-hot-fluid inputting interface; 4-hot-fluid output interface; 5-heat flow path; 6-thermal source.
[embodiment]
Embodiment 1
As shown in Figure 1, measurand in the present embodiment is light emitting diode, be made up of pn knot, chip 1-1, the first contact interface 2-1, metal substrate 1-2, the second contact interface 2-1 and aluminium base 1-3, pn becomes the thermal source 6 of this light emitting diode, be arranged in chip 1-1, the first contact interface 2-1 and the second contact interface 2-2 is respectively the articulamentum of unlike material and shape.
The heat transfer process of this light emitting diode is equivalent to One-dimensional heat transfer, as shown in Figure 2, the pn of its chip 1-1 ties produced heat and flows through chip 1-1, the first contact interface 2-1, metal substrate 1-2, the second contact interface 2-1 and aluminium base 1-3 successively along illustrated one dimension heat flow path 5; The upper and lower surface of chip 1-1, metal substrate 1-2 and aluminium base 1-3 is respective heat-transfer interface, and upper surface is hot-fluid inputting interface 3, and lower surface is hot-fluid output interface 4.
Chip 1-1, metal substrate 1-2 and aluminium base 1-3 are the homogeneous texture all with rectangular parallelepiped, and the material thermal capacitance of this three part (is designated as cv1 respectively, cv2 and cv3), thermal conductivity (is designated as λ 1 respectively, λ 2 and λ 3), the area of surface of contact (is designated as A1, A2 and A3) and thickness (being designated as d1, d2 and d3) all known.According to following formula, the thermal capacitance (being designated as C1, C3 and C5) and thermal resistance (being designated as R1, R3 and R5) value that obtain each heat-conduction component 1 can be calculated:
C＝cν·d·A
R = d λ · A
According to the One-dimensional heat transfer process of light emitting diode, set up the CAUER model shown in Fig. 3, utilize thermal capacitance and the heat resistance characteristic of 100 continuous micro_element on 100 limited RC loop analog measurand one dimension heat flow paths, the C in each RC loop wiand R withe thermal capacitance value of each infinitesimal and thermal resistance value on corresponding measurand one dimension heat flow path, and each infinitesimal on one dimension heat flow path is corresponding in turn to each heat-conduction component 1 on one dimension heat flow path and contact interface 2.Obtain the C in each RC loop of CAUER model wiand R wi, just can obtain the distributed data of thermal capacitance and thermal resistance on heat flow path.
CAUER model obtains by setting up the FOSTER model solution shown in Fig. 4, and this model comprises 100 RC loops, and thermal capacitance and the thermal resistance value in each RC loop are designated as C thiand R thi(i=1,2 ..., 100), tie the certain heating electric power Δ P of input to the pn of measurand h, then the temperature and time t of thermal source, the thermal capacitance C in each RC loop thiwith thermal resistance R thimeet following relation
T ( t ) = Δ P H Σ i = 1 n R thi · [ 1 - exp ( - t τ i ) ] ; τ i = C thi · R thi
Time t in above formula is the heat time, in conjunction with the intensification test data in 100 moment in thermal source trend thermal equilibrium process, as shown in Figure 5, is converted and deconvolution calculating, can solve each C by series of equivalent thiand R thivalue.By FOSTER model conversion to corresponding CAUER model, the C in each RC loop of CAUER model can be obtained wiand R wi.For CAUER model, the thermal capacitance value in each RC loop is added the accumulation thermal capacitance obtaining thermal resistance structure function, the thermal resistance value in each RC loop is added the accumulation thermal resistance obtaining thermal resistance structure function, i.e. thermal resistance structure function, as shown in Figure 6.
Fig. 6 is the thermal resistance differential structrue function of measurand, each characteristic peak P(is designated as P1, P2, P3 and P4 respectively) correspond respectively to chip 1-1, metal substrate 1-2 and aluminium base 1-3 from left to right, the border, peak of each characteristic peak P is determined by the peak of each heat-conduction component 1 and thermal resistance value.Concrete grammar is as follows: in differential structrue function, and the characteristic peak corresponding to chip 1-1 is P1, and the thermal resistance value of chip 1-1 is the border, peak, left side of R1, P1 is axis of ordinates, and border, peak, right side is the horizontal ordinate corresponding to L1, L1 is R1; Be P2 with metal substrate 1-2 characteristic of correspondence peak, with horizontal ordinate corresponding to P2 peak value for symmetric points, respectively left and to the right, distance is respectively draw two separatrix L2 and L3, the thermal resistance value R6 corresponding to the horizontal ordinate of L2 be pn knot to metal substrate 1-2 hot-fluid inputting interface 3 between accumulation thermal resistance.Now, the thermal resistance R2 of the first contact interface 2-1 is: R6-R1.
Characteristic peak corresponding to aluminium base 1-3 should get L3 with the maximal point in the region on the right side, the peak P3 that namely peak value is maximum.With the peak value horizontal ordinate of P3 for symmetric points, respectively left and to the right, distance is respectively draw two separatrix L4 and L5, thermal resistance value R8 corresponding to the horizontal ordinate of L4 is the accumulation thermal resistance between pn knot to aluminium base 1-3 hot-fluid inputting interface 3, thermal resistance value R7 corresponding to the horizontal ordinate of L3 is the accumulation thermal resistance between pn knot to metal substrate 1-2 hot-fluid output interface 3, now, the thermal resistance R4 of the second contact interface 2-2 is: R8-R7.
The thermal resistance value of chip 1-1, the first contact interface 2-1, metal substrate 1-2, the second contact interface 2-2 and aluminium base 1-3 is obtained: R1, R2, R3, R4 and R5, the i.e. thermal resistance structure of measurand according to above step.According to the thermal resistance size of each heat-conduction component 1 and contact interface 2, and the material feature of measurand, can infer that whether the thermo-contact of measurand inside is good.Such as, when the thermal resistance of contact interface 2 is excessive, then illustrate that between its adjacent chip 1-1 and metal substrate 1-3, thermo-contact is bad, as there is gap or bubble etc.; Or by the thermal resistance structure of the different measurand of comparison, user can be helped to screen the good product of thermo-contact.
Embodiment 2
That embodiment 2 specifies the peak area of peak width and the thermal capacitance value of each heat-conduction component 1 by each characteristic peak of contrast, and determine the position on border, peak, concrete grammar is as follows with embodiment 1 difference.
In the differential structrue function shown in Fig. 7, the characteristic peak corresponding with chip 1-1, metal substrate 1-2 and aluminium base 1-3 is respectively: P1, P2 and P3, and in theory, the peak area of each characteristic peak P should be equal with the thermal capacitance value of corresponding heat-conduction component 1.
The characteristic peak corresponding to chip 1-1 of light emitting diode is P1, and border, peak, left side is axis of ordinates, and the horizontal ordinate that peak, right side border L11 is corresponding is R1.
The characteristic peak corresponding to metal substrate 1-2 of light emitting diode is P2, with the horizontal ordinate of peak value for symmetric points, is left and to the right with R3 that distance marks interval separatrix L14 and L15 respectively.In the interval of separatrix L14 and L15, border, peak L12 and L13 of characteristic peak P2 with fixing peak width R3 in the interval that L14 and L15 is formed with interval move from left to right, the peak area of each mobile computing characteristic peak P2, shadow region as shown in Figure 7.When the peak area calculated and metal substrate 1-2 thermal capacitance value closest to time, using the position now residing for L12 and L13 as the border, peak of characteristic peak P2.The rest may be inferred, obtains the border, peak of characteristic peak P3.For making result of calculation more accurate, the mobile interval on border, peak should be as far as possible little.
The horizontal ordinate corresponding to border, peak, left side of each characteristic peak be light emitting diode pn tie each heat-conduction component 1 hot-fluid inputting interface 3 between accumulation thermal resistance, the horizontal ordinate corresponding to border, peak, right side be light emitting diode pn tie each heat-conduction component 1 hot-fluid output interface 4 between accumulation thermal resistance.As shown in Figure 7, the accumulation thermal resistance corresponding to L12, L13, L16 and L17 is R12, R13, R14 and R15, then the thermal resistance R2 of the first contact interface 2-1 is: R12-R1, and the thermal resistance R4 of the second contact interface 2-2 is: R14-R13.
The thermal resistance value of chip 1-1, the first contact interface 2-1, metal substrate 1-2, the second contact interface 2-2 and aluminium base 1-3 is obtained: R1, R2, R3, R4 and R5, the i.e. thermal resistance structure of measurand according to above step.
Embodiment 3
That the thermal capacitance value of embodiment 3 by each heat-conduction component 1 of contrast and the thermal resistance of integration structure function acquisition contact interface 2, concrete grammar is as follows with embodiment 1 difference.
Figure 8 shows that the thermal resistance integration structure function of light emitting diode, the horizontal ordinate of integration structure function is the accumulation thermal resistance that light emitting diode pn ties to each heat-conduction component 1 or contact interface 2, and ordinate is the accumulation thermal capacitance that light emitting diode pn ties to each heat-conduction component 1 or contact interface 2; Distinguish corresponding chip 1-1, the first contact interface 2-1, metal substrate 1-2, the second contact interface 2-2 and aluminium base 1-3 from left to right for each section of curve.
As shown in Figure 8, in integration structure function, first find each point corresponding with the summit of characteristic peak P in differential structrue function, heat history capacitance corresponding to each point place is the feature thermal capacitance value C1t of each heat-conduction component 1, C3t and C5t.The thermal capacitance value of light-emitting diode chip for backlight unit 1-1 is C1, be that C1 place obtains and is parallel to the separatrix L10 of abscissa axis at ordinate, the accumulation thermal capacitance corresponding to the intersection point of L10 and integration structure function and accumulation thermal resistance are accumulation thermal capacitance and the accumulation thermal resistance that the pn of light emitting diode ties chip 1-1 hot-fluid output interface 4-1; With feature thermal capacitance value C3t for symmetric points, along axis of ordinates respectively up and down, with distance be respectively mark two separatrix L8 and L9, one section of curve that L9 and L10 limits is the characteristic curve of the first contact interface 2-1, and the interval width of this section of curve corresponding on abscissa axis is the thermal resistance R2 of the first contact interface 2-1.By that analogy, can obtain separatrix L6 and L7, one section of curve that L7 and L8 limits is the characteristic curve of the second contact interface 2-2, and the interval width corresponding on abscissa axis of this section of curve is the thermal resistance R4 of the second contact interface 2-2.
The thermal resistance value of chip 1-1, the first contact interface 2-1, metal substrate 1-2, the second contact interface 2-1 and aluminium base 1-3 is obtained: R1, R2, R3, R4 and R5, the i.e. thermal resistance structure of measurand according to above step.
Embodiment 4
That in example 4, the interval of each heat-conduction component 1 corresponding in integration structure function is determined according to its feature thermal capacitance value, thermal capacitance value and thermal resistance value, and concrete grammar is as follows with embodiment 3 difference.
As shown in Figure 9, in integration structure function, the feature thermal capacitance value of light-emitting diode chip for backlight unit 1-1 is C1t, thermal capacitance value is C1, be that C1 place obtains and is parallel to the separatrix L24 of abscissa axis at ordinate, the accumulation thermal capacitance corresponding to the intersection point of L24 and integration structure function and accumulation thermal resistance are accumulation thermal capacitance and the accumulation thermal resistance that the pn of light emitting diode ties chip 1-1 hot-fluid output interface 4-1; The feature thermal capacitance value of metal substrate 1-2 is C3t, thermal capacitance value is C3, centered by C3t, C3 is in the interval of half width, separatrix L25, using L24 as starting point, keeps the distance of C3 to move from bottom to top with L26, when the width in the interval that the curve limited when two separatrix is corresponding on abscissa axis is closest to R3, then stop mobile, determine the position of L25 and L26.One section of curve that L25 and L24 limits is the characteristic curve of the first contact interface 2-1, and the width in this section of curve interval of correspondence on abscissa axis is the thermal resistance R2 of the first contact interface 2-1.By that analogy, can obtain and separatrix L27 and L28 corresponding to aluminium base 1-3, one section of curve that L27 and L26 limits is the characteristic curve of the second contact interface 2-2, and the width in the interval of this section of curve corresponding on abscissa axis is the thermal resistance R4 of the second contact interface 2-2.
The numerical value of accumulation thermal capacitance is comparatively large, in the computation process of structure function, is easily subject to the impact of computational accuracy and inaccurate.As preferably, the interval separatrix L24 that light-emitting diode chip for backlight unit 1-1 is corresponding can obtain according to its thermal resistance value, first finds horizontal ordinate R1 point corresponding on integration structure function, and crosses the separatrix L24 that this point makes to be parallel to abscissa axis.
The thermal resistance value of chip 1-1, the first contact interface 2-1, metal substrate 1-2, the second contact interface 2-2 and aluminium base 1-3 is obtained: R1, R2, R3, R4 and R5, the i.e. thermal resistance structure of measurand according to above step.
Embodiment 5
As shown in figure 11, embodiment 5 and embodiment 1 difference are, each heat-conduction component 1 of measurand is divided into 20 structural units along direction of heat flow, and each structural unit is a heat transfer infinitesimal, corresponding to a RC loop in the CAUER model shown in Fig. 5.Calculate the thermal modeling parameter of each structural unit, and in conjunction with the temperature variation data in measurand thermal source temperature-rise period, calculate the thermal capacitance value and thermal resistance value that obtain each RC loop of CAUER model, obtain each contact interface 2 thermal resistance.Concrete grammar is as follows:
The one dimension heat flow path analogy that each heat-conduction component 1 of measurand and contact interface 2 form by CAUER model is the circuit on 100 rank, corresponding to 100 infinitesimals of continuous print on measurand heat flow path, and the C in each RC loop wiand R wibe thermal capacitance value and the thermal resistance value of each infinitesimal.In the model: heat corresponds to electricity, thermal resistance corresponds to resistance, and temperature variation corresponds to electric potential difference, and heating power corresponds to electric current.According to the relation between each physical quantity, the temperature obtaining thermal source is relative to the funtcional relationship between the thermal capacitance of the change Delta T (t) of initial temperature and time t, each infinitesimal and thermal resistance.
In this CAUER model, the 1 to 20 infinitesimal corresponds to the chip 1-1 of this light emitting diode, and chip 1-1 is divided into 20 structural units, and each structural unit flows through order according to hot-fluid and is corresponding in turn to the 1 to 20 infinitesimal; 21 to 40 infinitesimal corresponds to the first contact interface 2-1, and the 41 to 60 infinitesimal is corresponding in turn to 20 structural units in metal substrate 1-2; 61 to 80 infinitesimal corresponds to the second contact interface 2-2, and the 81 to 100 infinitesimal is corresponding in turn to 20 structural units in aluminium base 1-3.
The thermal modeling parameter of each structural unit can calculate according to the following formula according to the geological information of each heat-conduction component 1 of measurand and material thermal characteristics:
C = ∫ 0 h cv · A ( x ) · dx
R = ∫ 0 h 1 λ · A ( x ) · dx
C is thermal capacitance; R is thermal resistance; H is the thickness of this heat-conduction component 1 along One-dimensional heat transfer direction; A (x) is for being positioned on heat flow path 5 with thermal source at a distance of the sectional area at x place; Cv and λ is respectively heat capacity at constant volume and the thermal conductivity of this heat-conduction component material.
The thermal capacitance value and thermal resistance value that obtain each infinitesimal corresponding with each structural unit can be calculated according to above-mentioned formula, thus determine the part unknown quantity in Mathematics Model, again in conjunction with the temperature variation data in measurand thermal source trend thermal equilibrium process, thermal capacitance value and thermal resistance value: the C of each infinitesimal corresponding with each contact interface can be obtained by rapid solving wiand R wi(i=1,2,3 ..., and then obtain the thermal resistance value of each contact interface 100).
According to the thermal resistance value R of above-mentioned each infinitesimal wiwith thermal capacitance value C wi, also can obtain thermal resistance structure function, as shown in figure 11.Each point on structure function is corresponding in turn in the 1 to 100 infinitesimal from left to right, according to the position of each point can obtain in structure function with the curve corresponding to each heat-conduction component 1 of measurand and contact interface 2, and directly can read the thermal resistance value of each contact interface 2 according to horizontal ordinate.

Claims (9)

1. a thermal resistance analysis method, it is characterized in that, measurand comprises thermal source and each heat-conduction component, utilizes the thermal modeling parameter of the temperature variation data of thermal source and each heat-conduction component, analyze the thermal resistance of contact interface between each heat-conduction component of measurand, comprise the following steps:
A (), to after thermal source power input, measures the temperature data over time of thermal source;
B () sets up the Mathematics Model of measurand, determine the funtcional relationship between thermal resistance on the temperature and time of thermal source, heat flow path and thermal capacitance, and solve this funtcional relationship according to the temperature variation data of thermal source in (a) step, obtain the distributed data of thermal capacitance and thermal resistance on measurand heat flow path;
C () calculates the thermal modeling parameter of each heat-conduction component according to the size of direction of heat flow, each heat-conduction component and intrinsic thermal characteristic parameter thereof, comprise thermal capacitance value and thermal resistance value;
D (), by the thermal modeling parameter comparative analysis of the distributed data of thermal capacitance and thermal resistance on measurand heat flow path and each heat-conduction component, obtains the thermal resistance of contact interface between each heat-conduction component.
2. a kind of thermal resistance analysis method as claimed in claim 1, it is characterized in that, according to the distributed data of the thermal capacitance on described heat flow path and thermal resistance, obtain the delta data of accumulation thermal capacitance with accumulation thermal resistance at each point place on thermal source to heat flow path, the i.e. thermal resistance structure function of measurand, comprises integration structure function and differential structrue function.
3. a kind of thermal resistance analysis method as claimed in claim 2, it is characterized in that, in differential structrue function, determine the characteristic peak corresponding to each heat-conduction component, according to peak width and the border, peak at its thermal resistance value determination character pair peak, the accumulation thermal resistance between the corresponding thermal source to heat-conduction component hot-fluid inputting interface of thermal resistance value of peak boundary or the accumulation thermal resistance between thermal source to heat-conduction component hot-fluid output interface.
4. a kind of thermal resistance analysis method as claimed in claim 3, it is characterized in that, the border, peak of described characteristic peak is determined by peak width and peak area, specifies the difference of the peak area in peak width and heat-conduction component thermal capacitance value to be positioned at the error range of setting, then determines the position on border, peak.
5. a kind of thermal resistance analysis method as claimed in claim 2, it is characterized in that, in integration structure function, determine the feature thermal capacitance value corresponding with each heat-conduction component, and determine its interval corresponding in integration structure function according to the thermal capacitance value of feature thermal capacitance value and each heat-conduction component.
6. a kind of thermal resistance analysis method as claimed in claim 1, is characterized in that, in measurand heat source temperature measuring process, the heat transfer end of measurand or measurand is placed in natural convection environment or controllable constant-temperature environment.
7. a kind of thermal resistance analysis method as claimed in claim 1, it is characterized in that, comprising with measurand is the normal component of similar device, the differential structrue function of difference measurement standard device and measurand in identical test environment, according to the thermal resistance value in normal component between heat transfer end and test environment, correct the peak of characteristic peak in measurand differential structrue function.
8. a thermal resistance analysis method, it is characterized in that, measurand comprises thermal source and more than one heat-conduction component, set up the Mathematics Model of measurand, using the thermal modeling parameter of each heat-conduction component as restrictive condition, in conjunction with the thermal capacitance on the temperature variation data acquisition measurand heat flow path of thermal source and thermal resistance distributed data, thus directly obtain the thermal resistance of contact interface between each heat-conduction component, comprise the following steps:
A (), to after thermal source power input, measures the time dependent data of temperature of thermal source;
B () calculates the thermal modeling parameter of each heat-conduction component according to the size of direction of heat flow, each heat-conduction component and intrinsic thermal characteristic parameter thereof, comprise thermal capacitance value and thermal resistance value;
(c) with the thermal source of measurand for heat transfer starting point, contact interface between each heat-conduction component of measurand and each heat-conduction component is divided into continuous print limited heat transfer infinitesimal along heat flow path, set up the Mathematics Model of measurand accordingly, determine the funtcional relationship between the thermal resistance of the temperature and time of thermal source, each infinitesimal and thermal capacitance;
D () is using the thermal modeling parameter of each heat-conduction component that the calculates restrictive condition as Mathematics Model, in conjunction with the time dependent temperature data of thermal source, the funtcional relationship of solution procedure (c), obtain the thermal capacitance on measurand heat flow path and thermal resistance distributed data, and directly obtain the thermal resistance of contact interface between each heat-conduction component.
9. a kind of thermal resistance analysis method as claimed in claim 8, is characterized in that, in measurand heat source temperature measuring process, the heat transfer end of measurand or measurand is placed in natural convection environment or controllable constant-temperature environment.
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