CN106198615B - Gallium nitride power device package thermal contact resistance measurement method - Google Patents
Gallium nitride power device package thermal contact resistance measurement method Download PDFInfo
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Abstract
The invention discloses a kind of gallium nitride power device package thermal contact resistance measurement methods, are related to power device thermal resistance detection technique field.The present invention is the following steps are included: with the temperature lowering curve under the conditions of transient state infrared measurement of temperature device measuring two kinds of thermal contact resistances of device；Two integral structure function curves of two temperature lowering curves are obtained with structure function method；The value of crust thermal resistance, the i.e. starting point of thermal contact resistance are obtained using integral structure function curve；Translation low thermal resistance curve obtains the thermal contact resistance under the conditions of high thermal resistance, translates high thermal resistance curve and obtains the thermal contact resistance under the conditions of low thermal resistance.Temperature lowering curve of the present invention using transient state infrared measurement of temperature device measuring device under the conditions of two kinds of different thermal impedances, two temperature lowering curves are analyzed with structure function method, obtain integral structure function curve, thermal contact resistance is determined by curve comparison twice, realize the measurement to gallium nitride power device package and carrier thermal contact resistance, accuracy is high.
Description
Technical field
The present invention relates to power device thermal resistance detection technique field, specifically a kind of gallium nitride power device package contact heat
Hinder measurement method.
Background technique
Thermal resistance is a very important parameter to GaN power device, and such devices are made of multilayer material, such as Figure 10 institute
Show.Layers of material all corresponds to respective thermal resistance, such as chip layer thermal resistance, adhesive layer thermal resistance, case thermal resistance, heat-conducting silicone grease thermal resistance
(shell and heat sink thermal contact resistance), heat sink thermal resistance etc., as shown in figure 11.
Conventional thermo-resistance measurement standard or method (such as Mil std 833, JESD51 and GJB548) is paid close attention to and measurement more
Tie the thermal resistance of shell.But for true device, crust thermal resistance is a part of total thermal resistance, due to shell and perseverance
Warm platform or it is heat sink between contact conditions it is different, thermal contact resistance has apparent difference, directly affects under use condition
The reliability of junction temperature and device.So the design and reliability consideration of measurement shell and heat sink thermal contact resistance to GaN power
It is very important.
Currently, the technology for thermal resistance measurement has the thermo-resistance measurement side of the thermo-resistance measurement method and optical principle of electrical principles
Method.Figure 12 is the good device layers structure chart of adhesive layer, energy in the electricity thermal resistance measurement technical know-how based on structure function method
The thermal resistance of layers of material of enough measurements including thermal contact resistance.The basic principle is that the thermal resistance thermal capacitance characteristic of different layer materials
Difference, slope of a curve shown in Figure 13 also can be different, therefore can be obtained by the level of the level respective devices of the slope of curve
To thermal contact resistance (be the good measured device of adhesive layer in Figure 13 and thermal contact resistance is the thermal resistance curve figure of heat-conducting silicone grease)；Figure 14
To be bonded ideal thermal resistance correlation curve of the layer defects with adhesive layer when good, dotted line is the thermal resistance for being bonded layer defects in Figure 14, real
Line is the good thermal resistance of adhesive layer.But the heat transfer that the above method important prerequisite is device be it is one-dimensional, that is, be
From knot downwards propagate, still, the heat transfer of actual device be all it is three-dimensional, cause each layer the slope of curve change will not as figure
Clear like that in 13, typically as shown in figure 15, structure function curve Different Slope is all continuous excessive to be difficult clearly to divide
Distinguish the separation of layers of material thermal resistance, exactly above-mentioned reason causes, and the method for directlying adopt structure function curve does not simply fail to standard
Really measurement thermal contact resistance, also can not accurately measure crust thermal resistance.
Exactly for above-mentioned consideration, International Standards Organization --- the International Solid electronic device committee disclosed in 2010
Newest crust thermal resistance measurement standard JESD51-14 " Transient Dual Interface Test Method for the
Measurement of the Thermal Resistance Junction-to-Case of Semiconductor
Devices with Heat Flow Trough a Single Path ", mark regulation, in order to accurately measure crust thermal resistance,
It needs to measure structure function curve twice under the conditions of different thermal contact resistances, accurately crust is determined by the burble point of curve
The value of thermal resistance, as shown in figure 16.
Above method effective solution directlys adopt the problem of structure function curved measurement crust thermal resistance inaccuracy, but
It is that there is no the methods of thermal contact resistance between specifying measurement shell and carrier.In addition, above-mentioned mark is based on electric method thermometric, electricity
Although method thermo-resistance measurement technology using more universal, it is not also special on the thermo-resistance measurement of the new materials device such as GaN
Unmature, the strong self-excitation Effect of these devices often leads to effectively to be measured.
Infrared temperature measurement apparatus is suitable for any kind of microwave power device.For microwave power device, different items
Temperature or its variation under part can reflect the different characteristics of device, and such as: the available device of infrared microscopy thermal imaging device is not
With the distribution of spot temperature, this provides strong support for the thermal design and failure analysis of device；Transient state infrared equipment can
The a certain spot temperature of measurement device at any time cyclically-varying the case where, this effectively supports the heat to pulse high power device
Characteristic research work.
But traditional infrared temperature-test technology can only measurement device junction temperature, use thermocouple monitoring shell temperature or heat sink temperature
The crust thermal resistance or knot of degree ability measurement device arrive the thermal resistance of environment, are not capable of measuring temperature lowering curve, can not achieve structure function spy
Property analysis, do not have measurement thermal contact resistance ability.
The prior art is excellent, disadvantage briefing is as follows:
The advantages of existing microelectronic component thermal resistance measurement method, has:
1) electric method application is universal, and maturity is high, and has formulated a series of international standards, in traditional silicon, GaAs device
It occupies an leading position in the thermal resistance measurement field of part；
2) imaging type detection may be implemented in Infrared microscopy, obtains the profiling temperatures of different parts, can differentiate micro-
The Temperature Distribution of small structure, has higher spatial resolution, and thermal resistance measurement accuracy is higher；
3) transient state infrared method can detecte the temperature signal of periodically high speed variation, effectively meet for pulsed operation condition
The thermal resistance measurement demand of lower high power device；
The shortcomings that existing method, is as follows:
1) electric method such as will affect the working condition of device, and be unable to measure GaN, HEMT at the emerging high power device；
2) method of accurate measurement thermal contact resistance is not provided in existing international standard；
3) Infrared microscopy measuring speed is slower, can only measure crust thermal resistance or knot arrives the total thermal resistance of carrier, not have
The function of standby a certain layer structure thermal resistance measurement, is unable to measure the thermal contact resistance of shell and carrier；
4) transient state infrared method is measured just for periodic temperature signal, cannot achieve to device layers thermal resistance
Measurement, is also just unable to measure thermal contact resistance.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of gallium nitride power device package thermal contact resistance measurement method,
Using temperature lowering curve of transient state infrared measurement of temperature device measuring device under the conditions of two kinds of different thermal impedances, analyzed with structure function method
Two temperature lowering curves, obtain integral structure function curve, determine thermal contact resistance by curve comparison twice, realize to gallium nitride function
The measurement of rate device package and carrier thermal contact resistance, accuracy are high.
In order to solve the above technical problems, the technical solution used in the present invention is: a kind of gallium nitride power device package connects
Touch thermal resistance measurement method, comprising the following steps:
1) two kinds of thermal contact resistance conditions of transient state infrared measurement of temperature device measuring device, that is, high thermal resistance condition and low thermal resistance condition are used
Under two temperature lowering curves；
2) two integral structure function curves of two temperature lowering curves are obtained with structure function method；
3) value of crust thermal resistance is obtained using integral structure function curve: according to transient state double interface crust thermal resistance measurement side
Method, the corresponding abscissa of the burble point of two integral structure function curves is exactly the thermal resistance that crusts, so passing through two songs of observation
The burble point of line can determine crust thermal resistance, this point is the starting point of thermal contact resistance；
4) translation low thermal resistance curve obtains the thermal contact resistance under the conditions of high thermal resistance: transverse translation low thermal resistance curve, makes its right side
End and high thermal resistance curve co-insides, the part of coincidence represent the thermal contact resistance of carrier thermal resistance, carrier and temperature control platform, two curves
Burble point is exactly the terminal of thermal contact resistance under the conditions of high thermal resistance；
Translate high thermal resistance curve and obtain the thermal contact resistance under the conditions of low thermal resistance: the high thermal resistance curve of transverse translation makes its right end
With low thermal resistance curve co-insides, the part of coincidence represents the thermal contact resistance of carrier thermal resistance, carrier and temperature control platform, point of two curves
From the terminal that point is exactly thermal contact resistance under the conditions of low thermal resistance；
5) difference of the starting point of the terminal and thermal contact resistance of thermal contact resistance is connecing under the conditions of high thermal resistance under the conditions of high thermal resistance
Touch thermal resistance；
The difference of the starting point of the terminal and thermal contact resistance of thermal contact resistance is the contact under the conditions of low thermal resistance under the conditions of low thermal resistance
Thermal resistance.
Wherein, in two kinds of thermal contact resistance conditions, the contact material under the conditions of the high thermal resistance of selection is air, low thermal resistance condition
Under contact material be heat-conducting silicone grease or indium sheet.
Wherein, in two kinds of thermal contact resistance conditions, the contact material under the conditions of the high thermal resistance of selection is heat-conducting silicone grease, low thermal resistance
Under the conditions of contact material be indium sheet.
Wherein, the transient state infrared measurement of temperature equipment is transient state infrared temperature measuring system, transient state infrared temperature measuring system
Including infrared radiation detector, amplifying circuit, data collecting card and industrial personal computer, the signal of infrared radiation detector and amplifying circuit
Input terminal connection, for acquiring the infrared radiation signal of measured device sending；The input of the signal of amplifying circuit and data collecting card
End connection, for the infrared radiation signal of acquisition to be amplified processing；Data collecting card and industrial personal computer carry out bi-directional data friendship
Mutually, for carrying out data acquisition according to the control of industrial personal computer, industrial personal computer is used to handle the data of data collecting card acquisition, and will adopt
The electric signal of truck acquisition is converted to temperature data and is stored and shown；Wherein, be equipped in industrial personal computer software model and
Data processing and display software module, when measuring system works, the Working mould of data collecting card is selected by software model
Formula, data processing and display software module are used to handle and show the data of acquisition.
The beneficial effects of adopting the technical scheme are that
The present invention is bent using cooling of transient state infrared measurement of temperature device measuring device under conditions of two kinds of different thermal contact resistances
Line determines the thermal resistance burble point of shell and contact material, contact material and heat sink thermal resistance burble point using structure function method, two
Thermal resistance between burble point is thermal contact resistance.
The present invention can effectively detect GaN power device shell based on international crust thermal resistance measurement standard
Thermal contact resistance between carrier.It can be effectively to the various microwave power devices including GaN power device using the invention
Part is designed and studies other heat resistance characteristics.
Detailed description of the invention
Fig. 1 is flow chart of the invention；
Fig. 2 is each layer structure chart of measured device when the present invention uses air as contact material；
Fig. 3 is each layer structure chart of measured device when the present invention uses heat-conducting silicone grease as contact material；
Fig. 4 is the temperature lowering curve under the conditions of two kinds of the present invention different thermal contact resistances；
Fig. 5 is the integral structure function curve of two kinds of the present invention different thermal contact resistances；
Fig. 6 is the crust thermal resistance of device；
Fig. 7 is the thermal contact resistance under the conditions of the high thermal resistance of device；
Fig. 8 is the thermal contact resistance under the conditions of device low thermal resistance；
Fig. 9 is transient state infrared temperature measuring system structure chart in the present invention；
Figure 10 is device layers structure chart in the prior art；
Figure 11 is the thermal resistance structure figure of Figure 10；
Figure 12 is the good measured device structure chart of adhesive layer；
Figure 13 is the relational graph of adhesive layer good measured device integral structure function and thermal resistance；
Figure 14 is the pass of adhesive layer good measured device integral structure function and the measured device thermal resistance of Nian Jie layer defects
System's figure；
Figure 15 is the relational graph under actual conditions between measured device integral structure function and thermal resistance；
Figure 16 is double interface method crust thermal resistance measurement result figures；
In figure: 1, measured device；2, air；3, heat sink；4, heat-conducting silicone grease；5, shell；6, adhesive layer；7, chip；8, hot
Resistance；9, thermal capacitance；10, cold plate.
Specific embodiment
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
The invention belongs to power device thermal resistance detection fields, study a kind of utilization structure function method measurement GaN power device
The method of thermal contact resistance between shell and carrier (heat sink, test fixture or cooling platform).This method is set with transient state infrared measurement of temperature
Temperature lowering curve of the standby measurement device under two kinds of different thermal contact resistances, obtains it using structure function analysis method and integrates structure letter
Number curve determines thermal contact resistance using two integral structure function curves according to the basic principle of international standard JESD51-14
Size.
Measuring process of the invention, as shown in Figure 1:
1, temperature lowering curve is measured under different contact conditions
With transient state infrared temperature measuring system (as shown in Figure 9) to each measured device 1, need to measure two kinds of bow strips
Two temperature lowering curves under part.Firstly, as shown in Fig. 2, (being contacted between device package and fixture contact surface without heat-conducting silicone grease
Thermal resistance is air) when measure a temperature lowering curve；Second step, as shown in figure 3, being smeared between device package and fixture contact surface
A temperature lowering curve is measured when heat-conducting silicone grease (i.e. thermal contact resistance is heat-conducting silicone grease), obtains two temperature lowering curves as shown in Figure 4.
Wherein, transient state infrared temperature measuring system includes infrared radiation detector, amplifying circuit, data collecting card and industry control
The signal input part of machine, infrared radiation detector and amplifying circuit connects, for acquiring the infra-red radiation letter of measured device sending
Number；The signal input part of amplifying circuit and data collecting card connection, for the infrared radiation signal of acquisition to be amplified processing；
Data collecting card and industrial personal computer carry out bidirectional data interaction, and for carrying out data acquisition according to the control of industrial personal computer, industrial personal computer is used
In the data of processing data collecting card acquisition, and the electric signal that capture card acquires is converted into temperature data and is stored and is shown
Show；Wherein, it is equipped with software model and data processing in industrial personal computer and display software module passes through when measuring system works
Software model selects the operating mode of data collecting card, and data processing and display software module are for handling and showing acquisition
Data.
2, two temperature lowering curves are analyzed with structure function method
Two temperature lowering curves as shown in Figure 4 that will be measured, (horizontal axis is the time, and the longitudinal axis is temperature) is input to structure function
It is analyzed in analysis software, available integral structure function curve, (horizontal axis is thermal resistance, and the longitudinal axis is thermal capacitance) as shown in Figure 5.
3, thermal contact resistance is determined by integral structure function curve
3.1 obtain crust thermal resistance by two integral structure function curves
According to the double interfaces crust thermal resistance measurement methods of transient state, the abscissa pair of the burble point of two integral structure function curves
What is answered is exactly the thermal resistance that crusts, so crust thermal resistance can be determined by the burble point of two curves of observation, as shown in fig. 6, crust
Thermal resistance is 1.078K/W.This point is the starting point of thermal contact resistance.
3.2 two integral structure function curves of translation obtain thermal contact resistance under the conditions of high thermal resistance
Transverse translation low thermal resistance curve, makes its right end and high thermal resistance curve co-insides, and the part of such as Fig. 7, coincidence represent carrier
The thermal contact resistance of thermal resistance, carrier and temperature control platform, the burble point of two curves are exactly the terminal of thermal contact resistance under the conditions of high thermal resistance.
As it can be seen that thermal contact resistance is 1.105K/W under the conditions of high thermal resistance.
3.3 two integral structure function curves of translation obtain thermal contact resistance under the conditions of low thermal resistance
The high thermal resistance curve of transverse translation, makes its right end and low thermal resistance curve co-insides, such as Fig. 8, and the part of coincidence represents carrier
The thermal contact resistance of thermal resistance, carrier and temperature control platform, the burble point of two curves are exactly the terminal of thermal contact resistance under the conditions of low thermal resistance.
As it can be seen that thermal contact resistance is 0.6567K/W under the conditions of low thermal resistance.
Wherein, under the conditions of the difference of the starting point of the terminal and thermal contact resistance of thermal contact resistance is high thermal resistance under the conditions of high thermal resistance
Thermal contact resistance；The difference of the starting point of the terminal and thermal contact resistance of thermal contact resistance is the contact under the conditions of low thermal resistance under the conditions of low thermal resistance
Thermal resistance.
Wherein, the thermal resistance of two kinds of contact materials of selection answers difference, generally marks in selection air, heat-conducting silicone grease namely figure
Thermal grease conduction, any two kinds in indium sheet.
According to the double interface method principles of transient state, under two kinds of contact conditions the difference of entire thermal resistance be as thermal contact resistance it is different caused by,
That is the difference of the terminal of thermal contact resistance should be equal to always under the conditions of the terminal and low thermal resistance of thermal contact resistance under the conditions of high thermal resistance
The difference of thermal resistance, the result obtained by the present invention under the conditions of high thermal resistance under the conditions of thermal contact resistance 1.105K/W and low thermal resistance it is found that connect
The difference for touching thermal resistance 0.6567K/W is 0.4483K/W, and the difference of two curve entire thermal resistances is 0.448K/W, and the two is consistent, it was demonstrated that
The accuracy of the method for the present invention.
The present invention can effectively detect GaN power device shell based on international crust thermal resistance measurement standard
Thermal contact resistance between carrier.It can be effectively to the various microwave power devices including GaN power device using the invention
Part thermal contact resistance and other heat resistance characteristics are studied.
Claims (4)
1. a kind of gallium nitride power device package thermal contact resistance measurement method, which comprises the following steps:
1) (1) two kind of thermal contact resistance condition, that is, high thermal resistance condition of transient state infrared measurement of temperature device measuring measured device and low thermal resistance item are used
Two temperature lowering curves under part；
2) two integral structure function curves of two temperature lowering curves are obtained with structure function method；
3) value of crust thermal resistance is obtained using integral structure function curve: according to the double interfaces crust thermal resistance measurement methods of transient state, two
The corresponding abscissa of the burble point of item integral structure function curve is exactly the thermal resistance that crusts, so passing through point of two curves of observation
Crust thermal resistance can be determined from point, this point is the starting point of thermal contact resistance；
4) translation low thermal resistance curve obtain the thermal contact resistance under the conditions of high thermal resistance: transverse translation low thermal resistance curve, make its right end with
High thermal resistance curve co-insides, the part of coincidence represent the thermal contact resistance of carrier thermal resistance, carrier and temperature control platform, the separation of two curves
Point is exactly the terminal of thermal contact resistance under the conditions of high thermal resistance；
Translate high thermal resistance curve and obtain the thermal contact resistance under the conditions of low thermal resistance: the high thermal resistance curve of transverse translation, make its right end with it is low
Thermal resistance curve is overlapped, and the part of coincidence represents the thermal contact resistance of carrier thermal resistance, carrier and temperature control platform, the burble point of two curves
It is exactly the terminal of thermal contact resistance under the conditions of low thermal resistance；
5) difference of the starting point of the terminal and thermal contact resistance of thermal contact resistance is contact heat under the conditions of high thermal resistance under the conditions of high thermal resistance
Resistance；
The difference of the starting point of the terminal and thermal contact resistance of thermal contact resistance is the thermal contact resistance under the conditions of low thermal resistance under the conditions of low thermal resistance.
2. gallium nitride power device package thermal contact resistance measurement method according to claim 1, which is characterized in that two kinds connect
It touches in thermal resistance condition, the contact material under the conditions of the high thermal resistance of selection is air, and the contact material under the conditions of low thermal resistance is thermally conductive
Silicone grease or indium sheet.
3. gallium nitride power device package thermal contact resistance measurement method according to claim 1, which is characterized in that two kinds connect
It touches in thermal resistance condition, the contact material under the conditions of the high thermal resistance of selection is heat-conducting silicone grease, and the contact material under the conditions of low thermal resistance is
Indium sheet.
4. gallium nitride power device package thermal contact resistance measurement method according to claim 1, which is characterized in that the wink
State infrared measurement of temperature equipment be transient state infrared temperature measuring system, transient state infrared temperature measuring system include infrared radiation detector,
The signal input part of amplifying circuit, data collecting card and industrial personal computer, infrared radiation detector and amplifying circuit connects, for acquiring
The infrared radiation signal that measured device issues；The signal input part of amplifying circuit and data collecting card connection, for what will be acquired
Infrared radiation signal amplifies processing；Data collecting card and industrial personal computer carry out bidirectional data interaction, for according to industrial personal computer
Control carries out data acquisition, and industrial personal computer is used to handle the data of data collecting card acquisition, and the electric signal of capture card acquisition is turned
Temperature data is changed to be stored and shown；Wherein, software model and data processing and display software are equipped in industrial personal computer
When measuring system works, the operating mode of data collecting card is selected by software model for module, and data processing and display are soft
Part module is used to handle and show the data of acquisition.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006145446A (en) * | 2004-11-24 | 2006-06-08 | Mitsubishi Electric Corp | Thermal conductivity measuring device and method |
| CN103175861A (en) * | 2013-02-20 | 2013-06-26 | 中国科学院电工研究所 | Junction-to-case thermal resistance testing method |
| CN103472088A (en) * | 2013-08-13 | 2013-12-25 | 杭州远方光电信息股份有限公司 | Thermal resistance analysis method |
| CN103792476A (en) * | 2014-01-17 | 2014-05-14 | 中国空间技术研究院 | Thermal resistance measuring method for semiconductor device |
| CN103852483A (en) * | 2012-12-04 | 2014-06-11 | 中国科学院微电子研究所 | Measuring method for junction-to-case thermal resistance of IGBTs (Insulated Gate Bipolar Translator) |
| JP2015078903A (en) * | 2013-10-17 | 2015-04-23 | 株式会社デンソー | Parameter setting method and simulation device |
-
2016
- 2016-06-28 CN CN201610485401.XA patent/CN106198615B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006145446A (en) * | 2004-11-24 | 2006-06-08 | Mitsubishi Electric Corp | Thermal conductivity measuring device and method |
| CN103852483A (en) * | 2012-12-04 | 2014-06-11 | 中国科学院微电子研究所 | Measuring method for junction-to-case thermal resistance of IGBTs (Insulated Gate Bipolar Translator) |
| CN103175861A (en) * | 2013-02-20 | 2013-06-26 | 中国科学院电工研究所 | Junction-to-case thermal resistance testing method |
| CN103472088A (en) * | 2013-08-13 | 2013-12-25 | 杭州远方光电信息股份有限公司 | Thermal resistance analysis method |
| JP2015078903A (en) * | 2013-10-17 | 2015-04-23 | 株式会社デンソー | Parameter setting method and simulation device |
| CN103792476A (en) * | 2014-01-17 | 2014-05-14 | 中国空间技术研究院 | Thermal resistance measuring method for semiconductor device |
Non-Patent Citations (2)
| Title |
|---|
| Development of a Standard for Transient Measurement of Junction-To-Case Thermal Resistance;Heinz Pape 等;《Microelectronics Reliability》;20120506;第52卷(第7期);第1272-1278页 |
| 半导体器件结到壳热阻测试研究;彭浩 等;《电子工艺技术》;20160531;第37卷(第3期);第171-174页 |
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