CN105388181A - Thermal resistance measurement sensor system - Google Patents

Abstract

The invention discloses a thermal resistance measurement sensor system to widen the application range and test object range of a T3ster thermal tester. According to the technical scheme, a thermocouple is arranged on a micro-strip resistor package substrate through punching to form a T3ster sensor, the thermocouple is connected with a T3ster data acquisition module, and the T3ster data acquisition module works under the control of a T3ster controller to output a high level control signal to switch on an electronic switch so that a high-voltage power supply for powering up a micro-strip resistor can be turned on; when the micro-strip resistor reaches heat balance, the T3ster controller outputs a step low level signal to the electronic switch to turn off the high-voltage power supply providing power for the micro-strip resistor, the T3ster data acquisition module synchronously acquires the temperature signal of the thermocouple on the micro-strip resistor during step heat load change so that a temperature response curve can be formed, and T3ster signal processing software is adopted for automatically analyzing the thermal structure function on a heat transfer route, so that the thermal resistance of the center section of a heat transfer structure is obtained.

Description

Thermo-resistance measurement sensing system

Technical field

The present invention relates to a kind of structure thermo-resistance measurement sensing system based on transient unbalanced response.

Background technology

With the development of electronic technology, in Structural Design of Electronic System, more and more pay close attention to the thermal resistance on electron device external heat road, the level particularly encapsulated at current electronic devices structure gets more and more, when becoming increasingly complex, thermal resistance is the key parameter of a judgement system thermal design quality, is also the key of system success or failure.The measurement of thermal resistance relates generally to temperature survey and heat power consumption is measured.The usual serviceability temperature sensor measures temperature of temperature survey.Temperature sensor adopts thermopair, platinum resistance, semiconductor PN to save usually.And heat power consumption is measured and usually directly adopted the electric work applied to dissipate, indirectly to derive acquisition heat power dissipation by measuring galvanometer voltage, special surveying instrument.In order to measure chip package heat structure, prior art has invented the Thermal test chip being actually a kind of thermal sensor.Thermal test chip utilizes semiconductor diode PN to save, built-in resistor on chip Die is adopted to heat chip, by heating resistor electrical connection semiconductor diode PN junction, the time dependent curve of chip internal point position temperature is obtained with the relation of the forward voltage drop of PN junction and temperature, by measuring the heating power of input, and PN saves the temperature variation of position, in a steady-state condition, it is the thermal resistance data of K/W that the temperature difference obtaining specific power change this temperature institute care positions lower and the ratio loading thermal value define unit between certain 2, as the joint thermal resistance of chip.

The weak point of the Thermal test chip that prior art adopts is:

Versatility is poor, and versatility provides the restriction of hot chip by encapsulation producer.The thermal design chip that each different chip must adopt corresponding encapsulation producer to provide, due to the thermal design chip that encapsulation producer can not provide all chips corresponding, makes versatility receive severely restricts.Therefore measurement chip save warm in, seldom adopted these class methods of Thermal test chip to be used as the joint thermal resistance of chip.Just some important chip such as CPU also has thermal design chip, but its price comparison is expensive, for conventional design unit, and is difficult to purchase corresponding thermal design chip.

Next be Thermal test chip can only be used for the chip testing special package all kinds of thermal resistances, as chip saves shell, joint is to the thermal resistance of pcb board etc.

A kind of novel T3ster of development in recent years measures joint thermal resistance method, the method is utilized not only to obtain chip joint temperature by steady-state analysis, what is more important can according to joint temperature variation relation in time, the information of the heat transfer structure of chip is obtained by later stage signal transacting, obtain the thermal resistance of those positions on heat-transfer path large, the thermal resistance of those positions is little, specifically on that layer of position of chip package, or on that position in external heat transfer path.Its basic theory is:

On One-dimensional heat transfer path, it can regard Fig. 3 as several a RC network thermal impedance network in series.For a Stepped Impedance Resonators, the response of single RC network is:

$a\left(t\right)=R\·\[1-e^{(-\frac{t}{\mathrm{\τ}})}\]$

Response after multiple RC network series connection is:

$a\left(t\right)=\underset{i=1}{\overset{n}{\Σ}}{R}_i\·\[1-e^{(-\frac{t}{{\mathrm{\τ}}_i})}\]$

If known R and timeconstantτ are just aware of whole system.When n is tending towards infinity, above formula can regard an integration as:

$a\left(t\right)={\∫}_0^{\mathrm{\∞}}R\left(x\right)\[1-e^{(-\frac{t}{\mathrm{\τ}})}\]d\mathrm{\τ}$

In distributed circuit is analyzed, R (τ) is called that time constant is composed.Due under continuous coordinate, the beginning of response cannot be differentiated, so change corresponding time shaft into logarithmic coordinate system.Order:

z＝ln(t)

Utilize substep differentiate formula, and bring above-mentioned conversion into corresponding integral expression and have:

$\frac{d}{dz}a\left(z\right)={\∫}_0^{\mathrm{\∞}}R\left(\mathrm{\ζ}\right)\[e^{(z-\mathrm{\ζ}-e^{(z-\mathrm{\ζ})})}\]d\mathrm{\ζ}$

Above formula is the integral expression of a convolution form, order:

$w_z\left(z\right)=e^{(z-e^z)}$

Then have:

$\frac{d}{dz}a\left(z\right)={\∫}_0^{\mathrm{\∞}}R\left(\mathrm{\ζ}\right)W_z(z-\mathrm{\ζ})d\mathrm{\ζ}$

That is:

$\frac{d}{dz}a\left(z\right)=R\left(z\right)\⊗w_z\left(z\right)$

Usually in Thermal test, response a (z) often of measurement, so R (z) tries to achieve by de-convolution operation:

$R\left(z\right)=\[\frac{d}{dz}a\left(z\right)\]{\⊗}^{-1}{w}_z\left(z\right)$

Above process is the physical basis that T3ster carries out measuring.T3ster tester is the product adopting up-to-date signal processing technology and traditional electrical measurement methods combining in recent years, owing to not having the sensor being applicable to its use of this respect at present, causes T3ster cannot give play to function to other aspects such as macrostructure thermo-resistance measurements.

The R (z) obtained by de-convolution operation, by Fig. 2 mode discretize, forms Foster network, then by conversion, can form the Cauer network with concrete physical significance.Form so-called structure function.

By peak value each on analytical structure function, the position of burble point, size, according to its physical significance, can draw corresponding thermal resistance size, thermal resistance produces the main information of position, becomes the powerful analyzing heat-transfer path on focus Wai Re road.

This method of testing is mainly used in the fields such as chip package test is upper, package detection, LED efficiency test.The T3ster of existing commercial instrument and equipment mainly U.S. Mentor, do not apply in measurement exterior mechanical structure thermal resistance, its main Problems existing mainly contains:

The fundamental purpose of the method remains the thermal resistances at different levels measuring chip package, and non-measured chip exterior installs physical construction, the thermal resistance of radiator structure;

External heat road thermal capacitance and coefficient of heat conductivity low time, when dispelling the heat bad, easily cause PN save temperature too high, cause transfiniting more than T3ster equipment voltage measurement range,

Large for heat radiation structure outside, dispel the heat good structure, system, easy produced problem is that temperature rise of hot spot is not high, and temperature rise curve is subject to externally measured noise jamming, and None-identified goes out outside thermal resistance network, or the precision identified is too poor, does not have using value.

At present, unspecial in identifying, analyzing external heat road and the chip that designs, current chip is all special functional chip, its heating power is general less, usually lower than 10W, and needs complicated peripheral circuit and peripheral circuit knowledge, competence exertion goes out its maximum power dissipation, and obtain actual work hear rate, and these knowledge and skillses, structure thermo-resistance measurement personnel do not possess often.

In view of above 3 reasons, T3ster is not also utilized to carry out the application of external structure thermo-resistance measurement at present.

Current existing patent documentation is many in basic test method and test fixture design, not about specially for T3ster is configured for large scale, can changes flexibly, for structure thermal resistance measurement Thermal test sensor aspect patent documentation.Domestic patent documentation is mainly distributed in transistor, LED thermo-resistance measurement method and corresponding testing platform clip aspect, typically measures transistor, LED thermal resistance method Patents document mainly contains:

[1] Beijing Times Minxin Technology Co., Ltd, disclosed in the microelectric technique research institute of Beijing, a kind of VLSI (very large scale integrated circuit) ties the method for shell thermo-resistance measurement: China Patent Publication No. CN201410073691.8 [P] .2014-6-4.

[2] a kind of power-type LED integration module thermo-resistance measurement new method disclosed in Minnan Normal University, China Patent Publication No. CN201210484705.6 [P] .2014-5-28.

[3] a kind of method utilizing DC source to test thermal boundary resistance between different materials disclosed in Peking University, China Patent Publication No. CN201110079809.4 [P] .2011-10-19.

[4] method of the thermal resistance value of Yingyeda Co., Ltd's disclosed simulation Thermal test chip: China Patent Publication No. CN200710129034.0 [P] .2008-12-31.

[5] modularization source of heat release device, the thermo-resistance measurement system with this device and method of testing: China Patent Publication No. CN201310520877.9 [P] .2015-4-29. disclosed in UAES

[6] a kind of thermal resistance of heat-conducting material method of testing and test fixture disclosed in Huawei Tech Co., Ltd, China Patent Publication No. CN200510101731.6 [P] .2007-5-30.

[7] proving installation of power type LED thermal resistance disclosed in University Of Chongqing and method: China Patent Publication No. CN201410171198.X [P] .2014-7-16.

[8] the disclosed thermo-resistance measurement method for semiconductor devices of the Chinese Academy of Space Technology, China Patent Publication No. CN201410022216.8 [P] .2014-5-14.

[9] disclosed method of testing and the system tying ring thermal resistance of Electronic No.5 Research Institute of MIIT, China Patent Publication No. CN201310526782.8 [P] .2014-1-29.

[10] a kind of solar cell heat resistance test apparatus and method of testing thereof disclosed in Xiamen University, China Patent Publication No. CN201310031364.1 [P] .2013-6-12.

[11] CAS Electrical Engineering Research Institute. crust thermo-resistance measurement method China Patent Publication No. CN201310054317.9 [P] .2013-6-26.

[12] disclosed in Beijing University of Technology, a kind of LED lamp thermal resistance forms proving installation and method China Patent Publication No. CN201310000861.5 [P] .2013-5-1.

[13] a kind of thermal resistance of high-power silicon carbide diode method of testing China Patent Publication No. CN201210234394.8 [P] .2012-10-31 disclosed in Southeast China University.

[14] China Electric Power Research Institute, Electrical Equipment Co., Ltd. Xi'an Witt. a kind of novel heat radiator thermal resistance flow resistance testing apparatus China Patent Publication No. CN201120120536.9 [P] .2011-12-21.

[15] a kind of thermal resistance of radiator of electric power semiconductor element method of testing disclosed in Zhuzhou Shidai Cooling Technology Co., Ltd and device China Patent Publication No. CN201110099548.2 [P] .2011-11-16.

[16] thermo-resistance measurement method China Patent Publication No. CN201010150355.0 [P] .2011-11-9 of heating radiator disclosed in Lejin Electronic and Electric Appliance Co Ltd (Tianjin).

[17] Hongfujin Precise Industry (Shenzhen) Co., Ltd., Hon Hai Precision Industry Ltd.. heat radiator thermal resistivity tester and test macro and method China Patent Publication No. CN200610201128.X [P] .2008-6-4.

Measure transistor, LED thermo-resistance measurement platform fixture be correlated with:

[1] metal-oxide half field effect transistor heat resistance test apparatus disclosed in Electronic No.5 Research Institute of MIIT and test board China Patent Publication No. CN201420623733.6 [P] .2015-3-18.

[2] microelectric technique research institute in Beijing disclosed in Beijing Times Minxin Technology Co., Ltd. a kind of glass envelope Surface Mount diode steady state heat resistance test fixture and method of testing China Patent Publication No. CN201410431067.0 [P] .2014-12-24.

[3] South China Normal University. a kind of device China Patent Publication No. CN201420786481.9 [P] .2015-4-29 for testing LED chip thermal resistance.

[4] electronic component thermal resistance test fixture China Patent Publication No. CN201410129084.9 [P] .2014-6-25 disclosed in Electronic No.5 Research Institute of MIIT.

[5] disclosed high precision temperature control pilot system China Patent Publication No. CN201410021593.X [P] .2014-5-14. for thermo-resistance measurement of the Chinese Academy of Space Technology

[6] device China Patent Publication No. CN200920198618.8 [P] .2010-8-18 of Shaoxing Rising-sun Technology Co., Ltd.'s disclosed test Miniature single-phase full-wave bridge rectifying steady state heat resistance and junction temperature.

[7] cpu heat thermal resistance intelligent test system disclosed in Liuzhou Vocational Technology College and method of testing China Patent Publication No. CN201410246065.4 [P] .2014-8-27 thereof.

[8] a kind of TO-3 package power semiconductor devices heat resistance test apparatus China Patent Publication No. CN201420107212.5 [P] .2014-9-10 disclosed in Chinese Academy of Sciences Microelectronics Institute.

[9] semiconductor power device heat resistance test apparatus disclosed in Hangzhou Shilan Microelectronics Co., Ltd. and method China Patent Publication No. CN201210592606.X [P] .2013-4-17.

[10] a kind of SMD-0.5 package power semiconductor devices heat resistance test apparatus China Patent Publication No. CN201420107215.9 [P] .2014-8-13 disclosed in Chinese Academy of Sciences Microelectronics Institute.

[11] Chinese Academy of Sciences Microelectronics Institute. a kind of TO-39 package power semiconductor devices heat resistance test apparatus China Patent Publication No. CN201420107234.1 [P] .2014-8-13.

[12] modularization source of heat release device disclosed in UAES and there is thermo-resistance measurement system China Patent Publication No. CN201320669430.3 [P] .2014-5-14. of this device

[13] power semiconductor device heat resistance test apparatus China Patent Publication No. CN201320379046.X [P] .2014-1-29 disclosed in Chinese Academy of Sciences Microelectronics Institute.

[14] thermal resistance tester China Patent Publication No. CN201020521051.6 [P] .2011-3-23 of a kind of semiconductor power device disclosed in No.13 Inst., Chinese Electronic Science & Technology Group Co.

[15] high power light-emitting diode heat resistance disclosed in Shanghai University and junction temperature test system China Patent Publication No. CN200810037356.7 [P] .2008-9-17.

[16] a kind of Portable LED heat resistance test apparatus China Patent Publication No. CN200820151973.5 [P] .2009-7-15 disclosed in Xiaoxi Car Lights Co Ltd, Shanghai.

[17] a kind of thyristor disclosed in West China Electric power Co and heat radiator thermal resistance test clamp tight device China Patent Publication No. CN200820222458.1 [P] .2009-9-30.

[18] Hon Hai Precision Industry Ltd. disclosed in Hongfujin Precise Industry (Shenzhen) Co., Ltd.. heat radiating device thermal resistance value tester China Patent Publication No. CN200710200005.9 [P] .2008-7-9.

[19] a kind of flat plate semiconductor device steady-state thermal resistance detector China Patent Publication No. CN200520097279.6 [P] .2006-12-13 disclosed in Xiangfan Taiji Semiconductor Co., Ltd.

Current most domestic patent documentation all points to retrofit testing method direction.As improved, measure electrical measuring method all improvement of joint temperature and method optimization etc. to the standard A STM5470 of thermal resistance measuring material, the versatility being mainly the ease for use of the method for retrofit testing joint temperature, retrofit testing fixture, retrofit testing fixture, the several aspect such as efficiency improving test.

Summary of the invention

The object of the invention is the weak point existed for prior art, a kind of data acquisition platform of providing according to T3ster tester and controller T3ster is provided to carry controller, data acquisition module, signal processing software, T3ster Thermal test instrument usable range and tested object scope can be improved, to solve measurement, to analyze the thermo-resistance measurement sensor of different piece thermal resistance on hot road.

Above-mentioned purpose of the present invention can be reached by following measures, a kind of thermo-resistance measurement sensing system, comprise an electronic switch with optocoupler, micro-strip resistance, thermopair and T3ster controller, wherein, electronic switch micro-strip resistance of connecting is connected with high-voltage DC power supply, it is characterized in that: thermopair punching is arranged on micro-strip resistance base plate for packaging, forms the sensor of T3ster, and thermopair is connected the data acquisition module that T3ster carries, outside high-current supply is powered to micro-strip resistance, and T3ster data acquisition module works under the control of T3ster controller, T3ster controller exports high-level control signal and opens electronic switch, connect the high-voltage power supply that micro-strip resistance powers up, the micro-strip resistance of continuous heating, when micro-strip resistance reaches thermal equilibrium, T3ster controller exports a step low level signal to electronic switch, electronic switch action immediately turns off the high pressure large power supply of powering to micro-strip resistance, the data acquisition module of simultaneously T3ster controller controls T3ster is when synchronous acquisition step thermal load changes immediately, the temperature signal of thermopair in micro-strip resistance, formation temperature response curve, and apply the signal processing software that T3ster carries, automatic analysis goes out the heat structure function on heat-transfer path, ask for the thermal resistance of care positions section in heat transfer structure.

The present invention has following beneficial effect compared to prior art.

Thermopair punching is arranged on micro-strip resistance base plate for packaging, as thermal source and sensor by micro-strip resistance sheet by the present invention, during test, utilize the output high-level control signal of T3ster controller, electronic switch with optocoupler is opened, connect the high-voltage power supply that micro-strip resistance powers up, micro-strip resistance work, continuous heating, when reaching thermal equilibrium, utilize the controlling functions of T3ster controller, controller is made to export a step low level signal to electronic switch by its testing software, electronic switch is action immediately, turn off the high direct voltage large power supply of powering to micro-strip resistance, the sensing system of T3ster will synchronously take the temperature signal at point position place immediately simultaneously, formation temperature response curve, and then by the signal processing software of T3ster, automatic analysis goes out the heat structure function on heat-transfer path, thus ask for the thermal resistance of care positions section in heat transfer structure, solve in thermal resistance measurement and T3ster cannot be used the problem of the thermo-resistance measurement of macrostructure, and adopting hot chip to carry out thermo-resistance measurement, poor universality, versatility provide by encapsulation producer the problem that hot chip restricts, heating power is low.

The present invention adopts electronic switch, the control signal utilizing T3ster controller to send, and realizes Thermocouple Temperature Acquisition process and stops the synchronous of heating process with resistance, and realizing synchronous temperature data acquisition is technical characteristics of the present invention.Have employed outside high-current supply to power to micro-strip resistance, make use of the little control voltage signal that T3ster exports when in test simultaneously, electronic switch is controlled, when realizing the change of step thermal load, temperature data data acquisition is synchronous, realize large heating power, substantially increase usable range, the tested object scope of former T3ster Thermal test instrument to a certain extent.

Micro-strip resistance of arbitrary size resistance can be used to carry out Thermal test to heat transfer structure after adopting the present invention, because its heating power is large, T3ster range of application be improved greatly, be conducive to, by test, finding out rapidly the heat transfer bottleneck place of system in thermal design.The present invention can make conventional microstrip resistance can be used as pyrotoxin and the sensor use of T3ster, achieves powerful Thermal test, for obtaining the heat structure function in external heat transfer path.

Accompanying drawing explanation

Fig. 1 is thermo-resistance measurement sensing system typical apply environment configurations schematic diagram of the present invention.

Fig. 2 is test thermo-resistance measurement sensor system principle of work schematic diagram.

To be that T3ster is existing connected by several RC network Fig. 3, and a thermal impedance network of formation, carries out thermo-resistance measurement principle schematic.

Embodiment

Consult Fig. 1.In embodiment described below, thermo-resistance measurement sensing system comprises: the electronic switch with optocoupler, micro-strip resistance, thermopair and a T3ster controller, wherein: electronic switch is connected micro-strip resistance.By external structure thermo-resistance measurement case ground connection, thermopair punching be arranged on micro-strip resistance base plate for packaging, formed can for T3ster utilize from heating sensor, this sensor is connected with T3ster data acquisition module, outside high-current supply is powered to micro-strip resistance, and the data acquisition module of T3ster works under the control of T3ster controller, T3ster controller exports high-level control signal and opens electronic switch, connect the high-voltage power supply that micro-strip resistance powers up, the micro-strip resistance of continuous heating, when micro-strip resistance reaches thermal equilibrium, T3ster controller, export a step low level signal to electronic switch, electronic switch action immediately turns off the high pressure large power supply of powering to micro-strip resistance, the simultaneously sensing system of T3ster thermopair corresponding temperature signal in micro-strip resistance during synchronous acquisition step thermal load change immediately under the control of T3ster controller, formation temperature response curve, and apply the signal processing software that T3ster carries, automatic analysis goes out the heat structure function on heat-transfer path, ask for the thermal resistance of care positions section in heat transfer structure.

In the annexation of the sensing system of thermo-resistance measurement shown in Fig. 2 and T3ster controller and measuring object, whole thermo-resistance measurement sensing system, comprises all parts of Fig. 1 except T3ster controller instrument and thermopair prime amplifier.T3ster controller connects by thermopair prime amplifier the body that thermopair K and micro-strip resistance R4 constitutes thermo-resistance measurement sensor.T3ster controller resistance in series R1, LED1 and diode ground connection GND, ground connection VDD optocoupler U1 collector are electrically connected big current high-voltage power supply VCC, VCC by resistance R2 parallel resistance R3 and are constituted by power MOSFET tube Q1 and resistance R2 and add electric control loop to micro-strip resistance R4.When T3ster controller exports as high level, LED1 indicates this high level, the optocoupler of conducting simultaneously U1, and the gate leve of Q1 is in low level, and Q1 is in conducting state, and micro-strip resistance R4 work, starts heating schedule; When after thermal-stable, start test procedure, when T3ster controller output low level, LED1 indicates this low level, and optocoupler U1 closes, and the gate leve of Q1 is in high level, and Q1 is in cut-off state, and micro-strip resistance R4 quits work immediately.Meanwhile, thermopair K starts collecting temperature signal from this moment, and is transferred in T3ster controller by prime amplifier, forms temperature drop response curve sequence, for follow-up data processing and analysis provide basic data.

Claims (4)

1. a thermo-resistance measurement sensing system, comprise an electronic switch with optocoupler, micro-strip resistance, thermopair and T3ster controller, wherein, electronic switch micro-strip resistance of connecting is connected with high-voltage DC power supply, it is characterized in that: thermopair punching is arranged on micro-strip resistance base plate for packaging, form the sensor of T3ster, and thermopair is connected the data acquisition module that T3ster carries, outside high-current supply is powered to micro-strip resistance, and T3ster data acquisition module works under the control of T3ster controller, T3ster controller exports high-level control signal and opens electronic switch, connect the high-voltage power supply that micro-strip resistance powers up, the micro-strip resistance of continuous heating, when micro-strip resistance reaches thermal equilibrium, T3ster controller exports a step low level signal to electronic switch, electronic switch action immediately turns off the high pressure large power supply of powering to micro-strip resistance, the data acquisition module of simultaneously T3ster controller controls T3ster is when synchronous acquisition step thermal load changes immediately, the temperature signal of thermopair in micro-strip resistance, formation temperature response curve, and apply the signal processing software that T3ster carries, automatic analysis goes out the heat structure function on heat-transfer path, ask for the thermal resistance of care positions section in heat transfer structure.

2. thermo-resistance measurement sensing system as claimed in claim 1, is characterized in that: 3ster controller connects by thermopair prime amplifier the body that thermopair K and micro-strip resistance R4 constitutes thermo-resistance measurement sensor.

3. thermo-resistance measurement sensing system as claimed in claim 1, it is characterized in that: T3ster controller resistance in series R1, LED1 and diode ground connection GND, ground connection VDD optocoupler U1 collector is electrically connected big current high-voltage power supply VCC by resistance R2 parallel resistance R3, and VCC is constituted by power MOSFET tube Q1 and resistance R2 and adds electric control loop to micro-strip resistance R4.

4. thermo-resistance measurement sensing system as claimed in claim 3, is characterized in that: when T3ster controller exports as high level, LED1 indicates this high level, the optocoupler of conducting simultaneously U1, the gate leve of Q1 is in low level, and Q1 is in conducting state, micro-strip resistance R4 work, starts heating schedule; When after thermal-stable, start test procedure, when T3ster controller output low level, LED1 indicates this low level, optocoupler U1 closes, and the gate leve of Q1 is in high level, and Q1 is in cut-off state, micro-strip resistance R4 quits work immediately, meanwhile, thermopair K starts collecting temperature signal from this moment, and is transferred in T3ster controller by prime amplifier, form temperature drop response curve sequence, for follow-up data processing and analysis provide basic data.