CN105589024A - Method and apparatus for detecting reliability of IGBT power device - Google Patents
Method and apparatus for detecting reliability of IGBT power device Download PDFInfo
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- CN105589024A CN105589024A CN201410580089.3A CN201410580089A CN105589024A CN 105589024 A CN105589024 A CN 105589024A CN 201410580089 A CN201410580089 A CN 201410580089A CN 105589024 A CN105589024 A CN 105589024A
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Abstract
The invention relates to the power device field, especially to a method and apparatus for detecting reliability of an IGBT power device. A microscopic infrared measurement method is used for obtaining microscopic infrared thermographys of different substrate materials and power devices and thus peak junction temperatures under different substrate temperatures and on different bias conditions are obtained; with a temperature-sensitive parameter measurement method, an average thermal resistance value of the power device is obtained; and on the basis of the peak junction temperatures, the average thermal resistance value, and the microscopic infrared thermographys, the material, the structure, and the process of the power device are evaluated effectively. Therefore, the reliability of the IGBT power device can be evaluated accurately.
Description
Technical field
The present invention relates to power device field, relate in particular to a kind of method of the IGBT of detection power device reliabilityAnd device.
Background technology
Power device junction temperature is one of principal element of weighing IGBT power device thermal reliability, therefore, and in meritIn the design of rate device, Accurate Determining junction temperature is just very important, still, and because device thermal resistance is not a constant,But large with the raising phase strain of junction temperature, measuring in device thermal resistance process, only have device in running order,The junction temperature recording is only effectively strict.
The junction temperature of device is not only closely related with the thermal response time of device, but also power on during will being subject toDistribution and hot spot limit, and the existence of hot spot declines its power, in estimation device mean time to failureWhat is more important hot spot, because lost efficacy and the most easily occurred on the hottest point.
Because the inhomogeneous of device inside electric current caused the inhomogeneous of Temperature Distribution, and the existence of thermograde willImpel electric current to concentrate again, form positive feedback, high power transistor is owing to having larger electrode area, noThe evitable inhomogeneities that has device architecture and epitaxial material, this inhomogeneities, makes justThe direction that is parallel to hetero-junctions plane produces thermograde and electric-force gradient, occurs the even hot-fluid of current unevenness notEvenly, form significant local hot spot.
Summary of the invention
The object of the invention is to propose a kind of method and device of the IGBT of detection power device reliability, canImprove the accuracy of the reliability detection of IGBT power device.
For reaching this object, the present invention by the following technical solutions:
A method that detects IGBT power device reliability, comprising:
Step 110, measurement IGBT power device leak pressure value and electrical leakage under different grid voltages, calculate instituteState the DC Steady power of IGBT power device;
Step 120, detect the Peak Junction Temperature of described IGBT power device, obtain described IGBT power devicePeak Junction Temperature value and infrared microscopy thermography;
Step 130, employing thermal sensitive parameter method are measured the average thermal resistance of IGBT power device;
Step 140, according to the DC Steady power of described IGBT power device, described Peak Junction Temperature and described inAverage thermal resistance, the relation of Peak Junction Temperature and DC Steady power that obtains respectively by Mathematical Fitting method is with averageThe relation of thermal resistance and DC Steady power;
Step 150, according to the relation of Peak Junction Temperature and DC Steady power and average thermal resistance and DC Steady powerRelation, described infrared microscopy thermography analyzed, obtain the reliability of described IGBT power deviceTesting result.
Wherein, the Peak Junction Temperature of described detection IGBT power device is specially: by described infrared microscopy thermal imageryDescribed in Equipment Inspection, the radiant energy density of IGBT power device chip distributes, and described radiant energy density is dividedCloth converts the temperature value of the surperficial each point of described IGBT power device to, obtains described Peak Junction Temperature.
Wherein, the computing formula of described average thermal resistance is:
Rth＝(TJ-TA)/PC
Wherein, TJFor instantaneous junction temperature, TAFor environment temperature, PCFor DC Steady power.
Wherein, described step 150 specifically comprises:
According to the device architecture of the epitaxial material of described IGBT power device, described IGBT power device, instituteState the relation of Peak Junction Temperature and DC Steady power and the relation of average thermal resistance and DC Steady power, to describedThe thermographic hot spot of infrared microscopy is analyzed, and judges the reliability of described IGBT power device.
A device that detects IGBT power device reliability, comprising:
DC Steady power measurement unit is leaked pressure value and leakage for measuring IGBT power device under different grid voltagesElectricity is worth, and calculates the DC Steady power of described IGBT power device;
Peak Junction Temperature measuring unit, for detection of the Peak Junction Temperature of described IGBT power device, described in obtainingThe Peak Junction Temperature value of IGBT power device and infrared microscopy thermography;
Average thermal resistance measuring unit, for adopting thermal sensitive parameter method to measure the average thermal resistance of IGBT power device;
Matching unit, for according to the DC Steady power of described IGBT power device, described Peak Junction Temperature andDescribed average thermal resistance, by Mathematical Fitting method obtain respectively Peak Junction Temperature and DC Steady power relation andThe relation of average thermal resistance and DC Steady power;
Fail-safe analysis unit, for according to the relation of Peak Junction Temperature and DC Steady power and average thermal resistance andThe relation of DC Steady power, analyzes described infrared microscopy thermography, obtains described IGBT power deviceThe testing result of the reliability of part.
Wherein, the Peak Junction Temperature of described detection IGBT power device is specially: by described infrared microscopy thermal imageryDescribed in Equipment Inspection, the radiant energy density of IGBT power device chip distributes, and described radiant energy density is dividedCloth converts the temperature value of the surperficial each point of described IGBT power device to, obtains described Peak Junction Temperature.
Wherein, the computing formula of described average thermal resistance is:
Rth＝(TJ-TA)/PC
Wherein, TJFor instantaneous junction temperature, TAFor environment temperature, PCFor DC Steady power.
Wherein, the workflow of described fail-safe analysis unit comprises:
According to the device architecture of the epitaxial material of described IGBT power device, described IGBT power device, instituteState the relation of Peak Junction Temperature and DC Steady power and the relation of average thermal resistance and DC Steady power, to describedThe thermographic hot spot of infrared microscopy is analyzed, and judges the reliability of described IGBT power device.
Beneficial effect of the present invention is: a kind of method and device that detects IGBT power device reliability, the partyMethod adopts infrared microscopy measuring method, obtains the infrared microscopy thermography of different backing materials and power device,Thereby obtain the Peak Junction Temperature under different substrate temperature and bias condition, adopt thermal sensitive parameter measuring method to obtainThe average thermal resistance of power device, by Peak Junction Temperature, average thermal resistance and infrared microscopy thermography to power deviceMaterial, structure and technique carry out Efficient Evaluation, and then exactly the reliability of IGBT power device is carried outEvaluate.
Brief description of the drawings
Fig. 1 is the method stream of a kind of IGBT of detection power device reliability of providing of the specific embodiment of the inventionCheng Tu.
Fig. 2 is the device knot of a kind of IGBT of detection power device reliability of providing of the specific embodiment of the inventionComposition.
Detailed description of the invention
Below in conjunction with Fig. 1 and Fig. 2 and further illustrate technical scheme of the present invention by detailed description of the invention.
Fig. 1 is the method stream of a kind of IGBT of detection power device reliability of providing of the specific embodiment of the inventionCheng Tu.
A method that detects IGBT power device reliability, comprising:
Step 110, measurement IGBT power device leak pressure value and electrical leakage under different grid voltages, calculate instituteState the DC Steady power of IGBT power device;
Step 120, detect the Peak Junction Temperature of described IGBT power device, obtain described IGBT power devicePeak Junction Temperature value and infrared microscopy thermography;
Step 130, employing thermal sensitive parameter method are measured the average thermal resistance of IGBT power device;
Step 140, according to the DC Steady power of described IGBT power device, described Peak Junction Temperature and described inAverage thermal resistance, the relation of Peak Junction Temperature and DC Steady power that obtains respectively by Mathematical Fitting method is with averageThe relation of thermal resistance and DC Steady power;
Step 150, according to the relation of Peak Junction Temperature and DC Steady power and average thermal resistance and DC Steady powerRelation, described infrared microscopy thermography analyzed, obtain the reliability of described IGBT power deviceTesting result.
In the present embodiment, adopt infrared microscopy measuring method, obtain different backing materials and power deviceInfrared microscopy thermography, thus the Peak Junction Temperature under different substrate temperature and bias condition obtained, adopt temperature-sensitiveMeasurement method of parameters obtains the average thermal resistance of power device, by Peak Junction Temperature, average thermal resistance and infrared microscopyMaterial, structure and the technique of thermography to power device is carried out Efficient Evaluation, and then exactly to IGBT powerThe reliability of device is evaluated.
In the present embodiment, the Peak Junction Temperature of described detection IGBT power device is specially: by described micro-Described in infrared thermal imagery Equipment Inspection, the radiant energy density of IGBT power device chip distributes, by described radiant energyMetric density distribution converts the temperature value of the surperficial each point of described IGBT power device to, obtains described peak value knotTemperature.
In the present embodiment, the computing formula of described average thermal resistance is:
Rth＝(TJ-TA)/PC
Wherein, TJFor instantaneous junction temperature, TAFor environment temperature, PCFor DC Steady power.
In the present embodiment, described step 150 specifically comprises:
According to the device architecture of the epitaxial material of described IGBT power device, described IGBT power device, instituteState the relation of Peak Junction Temperature and DC Steady power and the relation of average thermal resistance and DC Steady power, to describedThe thermographic hot spot of infrared microscopy is analyzed, and judges the reliability of described IGBT power device.
A device that detects IGBT power device reliability, comprising:
DC Steady power measurement unit is leaked pressure value and leakage for measuring IGBT power device under different grid voltagesElectricity is worth, and calculates the DC Steady power of described IGBT power device;
Peak Junction Temperature measuring unit, for detection of the Peak Junction Temperature of described IGBT power device, described in obtainingThe Peak Junction Temperature value of IGBT power device and infrared microscopy thermography;
Average thermal resistance measuring unit, for adopting thermal sensitive parameter method to measure the average thermal resistance of IGBT power device;
Matching unit, for according to the DC Steady power of described IGBT power device, described Peak Junction Temperature andDescribed average thermal resistance, by Mathematical Fitting method obtain respectively Peak Junction Temperature and DC Steady power relation andThe relation of average thermal resistance and DC Steady power;
Fail-safe analysis unit, for according to the relation of Peak Junction Temperature and DC Steady power and average thermal resistance andThe relation of DC Steady power, analyzes described infrared microscopy thermography, obtains described IGBT power deviceThe testing result of the reliability of part.
In the present embodiment, the Peak Junction Temperature of described detection IGBT power device is specially: by described micro-Described in infrared thermal imagery Equipment Inspection, the radiant energy density of IGBT power device chip distributes, by described radiant energyMetric density distribution converts the temperature value of the surperficial each point of described IGBT power device to, obtains described peak value knotTemperature.
In the present embodiment, the computing formula of described average thermal resistance is:
Rth＝(TJ-TA)/PC
Wherein, TJFor instantaneous junction temperature, TAFor environment temperature, PCFor DC Steady power.
In the present embodiment, the workflow of described fail-safe analysis unit comprises:
According to the device architecture of the epitaxial material of described IGBT power device, described IGBT power device, instituteState the relation of Peak Junction Temperature and DC Steady power and the relation of average thermal resistance and DC Steady power, to describedThe thermographic hot spot of infrared microscopy is analyzed, and judges the reliability of described IGBT power device.
The foregoing is only the specific embodiment of the present invention, these describe just of the present invention former in order to explainReason, and can not be interpreted as by any way limiting the scope of the invention. Based on explanation herein, thisThe technical staff in field does not need to pay performing creative labour can associate other specific embodiment party of the present inventionMethod, within these modes all will fall into protection scope of the present invention.
Claims (8)
1. a method that detects IGBT power device reliability, is characterized in that, comprising:
Step 110, measurement IGBT power device leak pressure value and electrical leakage under different grid voltages, calculate instituteState the DC Steady power of IGBT power device;
Step 120, detect the Peak Junction Temperature of described IGBT power device, obtain described IGBT power devicePeak Junction Temperature value and infrared microscopy thermography;
Step 130, employing thermal sensitive parameter method are measured the average thermal resistance of IGBT power device;
Step 140, according to the DC Steady power of described IGBT power device, described Peak Junction Temperature and described inAverage thermal resistance, the relation of Peak Junction Temperature and DC Steady power that obtains respectively by Mathematical Fitting method is with averageThe relation of thermal resistance and DC Steady power;
Step 150, according to the relation of Peak Junction Temperature and DC Steady power and average thermal resistance and DC Steady meritThe relation of rate, analyzes described infrared microscopy thermography, obtains the reliable of described IGBT power deviceThe testing result of property.
2. a kind of method that detects IGBT power device reliability according to claim 1, its featureBe, the Peak Junction Temperature of described detection IGBT power device is specially: establish by described infrared microscopy thermal imageryThe standby radiant energy density that detects described IGBT power device chip distributes, and described radiant energy density is dividedCloth converts the temperature value of the surperficial each point of described IGBT power device to, obtains described Peak Junction Temperature.
3. a kind of method that detects IGBT power device reliability according to claim 1, its featureBe, the computing formula of described average thermal resistance is:
Rth＝(TJ-TA)/PC
Wherein, TJFor instantaneous junction temperature, TAFor environment temperature, PCFor DC Steady power.
4. a kind of method that detects IGBT power device reliability according to claim 1, its featureBe, described step 150 specifically comprises:
According to the device architecture of the epitaxial material of described IGBT power device, described IGBT power device, instituteState the relation of Peak Junction Temperature and DC Steady power and the relation of average thermal resistance and DC Steady power, to describedThe thermographic hot spot of infrared microscopy is analyzed, and judges the reliability of described IGBT power device.
5. a device that detects IGBT power device reliability, is characterized in that, comprising:
DC Steady power measurement unit, for measure IGBT power device under different grid voltages, leak pressure value andElectrical leakage, calculates the DC Steady power of described IGBT power device;
Peak Junction Temperature measuring unit, for detection of the Peak Junction Temperature of described IGBT power device, described in obtainingThe Peak Junction Temperature value of IGBT power device and infrared microscopy thermography;
Average thermal resistance measuring unit, for adopting thermal sensitive parameter method to measure the average thermal resistance of IGBT power device;
Matching unit, for according to the DC Steady power of described IGBT power device, described Peak Junction TemperatureWith described average thermal resistance, obtain respectively the relation of Peak Junction Temperature and DC Steady power by Mathematical Fitting methodRelation with average thermal resistance and DC Steady power;
Fail-safe analysis unit, for according to the relation of Peak Junction Temperature and DC Steady power and average thermal resistance andThe relation of DC Steady power, analyzes described infrared microscopy thermography, obtains described IGBT powerThe testing result of the reliability of device.
6. a kind of device that detects IGBT power device reliability according to claim 5, its featureBe, the Peak Junction Temperature of described detection IGBT power device is specially: establish by described infrared microscopy thermal imageryThe standby radiant energy density that detects described IGBT power device chip distributes, and described radiant energy density is dividedCloth converts the temperature value of the surperficial each point of described IGBT power device to, obtains described Peak Junction Temperature.
7. a kind of device that detects IGBT power device reliability according to claim 5, its featureBe, the computing formula of described average thermal resistance is:
Rth＝(TJ-TA)/PC
Wherein, TJFor instantaneous junction temperature, TAFor environment temperature, PCFor DC Steady power.
8. a kind of device that detects IGBT power device reliability according to claim 5, its featureBe, the workflow of described fail-safe analysis unit comprises:
According to the device architecture of the epitaxial material of described IGBT power device, described IGBT power device, instituteState the relation of Peak Junction Temperature and DC Steady power and the relation of average thermal resistance and DC Steady power, to describedThe thermographic hot spot of infrared microscopy is analyzed, and judges the reliability of described IGBT power device.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105865634A (en) * | 2016-05-25 | 2016-08-17 | 珠海格力电器股份有限公司 | Temperature detection device and method of power device and power device |
| CN108414909A (en) * | 2018-02-02 | 2018-08-17 | 北京航空航天大学 | A kind of Darlington transistor steady state heat resistance measurement method based on electric method |
| CN108732481A (en) * | 2018-05-30 | 2018-11-02 | 四川蓝彩电子科技有限公司 | A kind of electric current detecting method of high-power IGBT module |
-
2014
- 2014-10-24 CN CN201410580089.3A patent/CN105589024A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105865634A (en) * | 2016-05-25 | 2016-08-17 | 珠海格力电器股份有限公司 | Temperature detection device and method of power device and power device |
| CN108414909A (en) * | 2018-02-02 | 2018-08-17 | 北京航空航天大学 | A kind of Darlington transistor steady state heat resistance measurement method based on electric method |
| CN108414909B (en) * | 2018-02-02 | 2019-11-29 | 北京航空航天大学 | A kind of Darlington transistor steady state heat resistance measurement method based on electric method |
| CN108732481A (en) * | 2018-05-30 | 2018-11-02 | 四川蓝彩电子科技有限公司 | A kind of electric current detecting method of high-power IGBT module |
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Application publication date: 20160518 |