CN104569774A - System and method detecting reliability of IGBT power device - Google Patents
System and method detecting reliability of IGBT power device Download PDFInfo
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- CN104569774A CN104569774A CN201410194176.5A CN201410194176A CN104569774A CN 104569774 A CN104569774 A CN 104569774A CN 201410194176 A CN201410194176 A CN 201410194176A CN 104569774 A CN104569774 A CN 104569774A
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Abstract
The invention discloses a system and method detecting reliability of an IGBT power device, and belongs to the field of micro detection of IGBT power devices. The method comprises the following steps: measuring leakage voltage value and leakage current value of an IGBT power device under different grid voltage; calculating and obtaining the direct current homeostasis power of the IGBT power device; detecting the peak value junction temperature of the IGBT power device through micro infrared thermal imaging equipment to obtain the peak value junction temperature value and a macro infrared thermal imaging image of the IGBT power device; obtaining the relation of the peak value junction temperature and the direct current homeostasis power and the relation of the peak value thermal resistance and the direct current homeostasis power respectively through a mathematical fitting method; analyzing the macro infrared thermal imaging image to obtain reliable testing result of the IGBT power device. According to the invention, the materials, structures and technologies of the devices are efficiently evaluated by comparing the macro infrared thermal imaging images of the devices of different structures and materials, so as to realize preliminary evaluation on matching devices within IGBT power.
Description
Technical field
The invention belongs to the infrared microscopy detection field of IGBT power device, particularly a kind of system and method detecting IGBT power device reliability.
Background technology
Infrared scan method, is the radiant flux density distribution carrying out detection means with infrared eye, can measures peak temperature and the invalid position thereof of device thus more accurately, thus calculate peak value thermal resistance.Stable state infrared microscopy is tested, and refers to measured piece when reaching steady state (SS), measures, thus obtain the high resolving power infrared microscopy distributed image of measured piece with infrared microscopy test macro to it.The test of stable state infrared microscopy is the effective means of microwave device thermal analyses, thermal design, especially for measuring element peak temperature, calculating device thermal resistance, detects hot spot and carries out failure analysis and have vital effect.
Device junction temperature is one of principal element weighing IGBT power device thermal reliability.Therefore, in device layout, Accurate Determining junction temperature is just very important.But, because device thermal resistance is not a constant, but strain mutually greatly with the raising of junction temperature.In mensuration device thermal resistance process, only have device in running order, the junction temperature recorded is only strict effective.
The junction temperature of device is not only closely related with the thermal response time of device, but also will limit by the power division on device and hot spot.The existence of hot spot makes its power drop, and what is more important hot spot in estimation device mean time to failure, the most easily occurred because lose efficacy on the hottest point.
Because the uneven of device inside electric current causes the uneven of Temperature Distribution, and the existence of thermograde will more impel current convergence, form positive feedback effect.High-power field effect transistor is owing to having larger electrode area, inevitably there is the unevenness of device architecture and epitaxial material, this unevenness just, the direction being parallel to heterojunction plane is made to produce thermograde and electric-force gradient, occur that the even hot-fluid of current unevenness is uneven, form significant local hot spot (hot spot).
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of system and method detecting IGBT power device reliability, solves in prior art and causes detecting inaccurate technical matters to IGBT device reliability because the even hot-fluid of current unevenness is uneven.
For solving the problems of the technologies described above, the invention provides a kind of system detecting IGBT power device reliability, comprising DC Steady power model, peak value thermal resistance module, DC Steady power relation module and analyzing reliability module;
Wherein, described DC Steady power model is used for, and measures IGBT power device and leak pressure value and leakage current value under different grid voltage, calculate the DC Steady power of described IGBT power device;
Described peak value thermal resistance module is used for, and detects the Peak Junction Temperature of described IGBT power device, obtains Peak Junction Temperature value and the infrared microscopy thermography of described IGBT power device, according to described Peak Junction Temperature value, calculates the peak value thermal resistance of described IGBT power device;
Described DC Steady power relation module is used for, according to the DC Steady power of described IGBT power device, described Peak Junction Temperature and described peak value thermal resistance, obtain the relation of Peak Junction Temperature and DC Steady power and the relation of peak value thermal resistance and DC Steady power respectively by Mathematical Fitting method;
Described analysis reliability module is used for, and according to Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, analyzes, obtain the testing result of the reliability of described IGBT power device to described infrared microscopy thermography.
Detect a method for IGBT power device reliability, comprise the steps:
Measure IGBT power device and leak pressure value and leakage current value under different grid voltage, calculate the DC Steady power of described IGBT power device;
By the Peak Junction Temperature of IGBT power device described in the equipment Inspection of infrared microscopy thermal imagery, obtain Peak Junction Temperature value and the infrared microscopy thermography of described IGBT power device, according to described Peak Junction Temperature value, calculate the peak value thermal resistance of described IGBT power device;
According to the DC Steady power of described IGBT power device, described Peak Junction Temperature and described peak value thermal resistance, obtain the relation of Peak Junction Temperature and DC Steady power and the relation of peak value thermal resistance and DC Steady power respectively by Mathematical Fitting method;
According to Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, described infrared microscopy thermography is analyzed, obtains the testing result of the reliability of described IGBT power device.
Further, comprise as follows by the method for the Peak Junction Temperature of IGBT power device described in the equipment Inspection of infrared microscopy thermal imagery:
By the radiant flux density distribution of described infrared microscopy thermal imagery equipment Inspection IGBT power device chip described in this, described radiant flux density distribution is changed the temperature value of the surperficial each point converting described IGBT power device to, obtain described Peak Junction Temperature.
Further, the method for the peak value thermal resistance of IGBT power device is calculated described in such as formula shown in (1):
Tj＝P*Rth(j-c)+Tc (1)
In formula, Tj is peak value thermal resistance, and unit is DEG C/W; P is DC Steady power, and unit is W; Rth (j-c) junction temperature for IGBT power device and the thermal resistance of environment temperature, unit is DEG C/W; Tc is the substrate temperature of IGBT power device, and unit is DEG C.
Further, described the method that infrared microscopy thermography is analyzed to be comprised the steps:
According to the epitaxial material of described IGBT power device, the device architecture of described IGBT power device, described Peak Junction Temperature and the relation of DC Steady power and the relation of described peak value thermal resistance and DC Steady power, the thermographic hot spot of described infrared microscopy is analyzed, judges the reliability of described IGBT power device.
The system and method for detection IGBT power device reliability provided by the invention, adopt the measuring method of infrared microscopy, obtain the infrared microscopy thermography of various substrates materials and devices, thus obtain device Peak Junction Temperature of (corresponding operating voltage and working current) at different substrate temperature and bias condition, and then obtain the thermal resistance of this device, by contrast different structure and the infrared microscopy thermography of material devices and the size of thermal resistance, in the Peak Junction Temperature obtaining device and the thermographic basis of infrared microscopy, determine the thermal resistance size of IGBT power device, by contrasting the infrared microscopy thermography of different structure and material devices, to the material of device, Structure and energy carries out Efficient Evaluation, and then achieve the preliminary assessment of IGBT power internally matched device.
Accompanying drawing explanation
The method flow diagram of the detection IGBT power device reliability that Fig. 1 provides for the embodiment of the present invention;
The junction temperature measurement infrared microscopy figure of the device A that Fig. 2 provides for the embodiment of the present invention;
The junction temperature measurement infrared microscopy figure of the device C that Fig. 3 provides for the embodiment of the present invention;
The junction temperature measurement infrared microscopy figure of the device B that Fig. 4 provides for the embodiment of the present invention;
The junction temperature distribution plan of the device B that Fig. 5 provides for the embodiment of the present invention;
The junction temperature distribution plan of the device A that Fig. 6 provides for the embodiment of the present invention.
Embodiment
The embodiment of the present invention provides a kind of system detecting IGBT power device reliability, comprises DC Steady power model, peak value thermal resistance module, DC Steady power relation module and analyzes reliability module;
Wherein, DC Steady power model is used for, and measures IGBT power device and leak pressure value and leakage current value under different grid voltage, calculate the DC Steady power of IGBT power device;
Peak value thermal resistance module is used for, and detects the Peak Junction Temperature of IGBT power device, obtains Peak Junction Temperature value and the infrared microscopy thermography of IGBT power device, according to Peak Junction Temperature value, calculate the peak value thermal resistance of IGBT power device;
DC Steady power relation module is used for, according to the DC Steady power of IGBT power device, Peak Junction Temperature and peak value thermal resistance, obtain the relation of Peak Junction Temperature and DC Steady power and the relation of peak value thermal resistance and DC Steady power respectively by Mathematical Fitting method;
Analysis reliability module is used for, and according to Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, analyzes, obtain the testing result of the reliability of IGBT power device to infrared microscopy thermography.
See Fig. 2, a kind of method detecting IGBT power device reliability that the embodiment of the present invention provides, comprises the steps:
Step 101: measure IGBT power device and leak pressure value and leakage current value under different grid voltage, calculate the DC Steady power of IGBT power device;
Step 102: by the Peak Junction Temperature of infrared microscopy thermal imagery equipment Inspection IGBT power device, obtains Peak Junction Temperature value and the infrared microscopy thermography of IGBT power device, according to Peak Junction Temperature value, calculates the peak value thermal resistance of IGBT power device;
Step 103: according to the DC Steady power of IGBT power device, Peak Junction Temperature and peak value thermal resistance, obtain the relation of Peak Junction Temperature and DC Steady power and the relation of peak value thermal resistance and DC Steady power respectively by Mathematical Fitting method;
Step 104: according to Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, infrared microscopy thermography is analyzed, obtains the testing result of the reliability of IGBT power device.
Embodiments provide a kind of method of concrete detection IGBT power device reliability, specific as follows:
Step 201: adopt direct supply tested IGBT power device to be carried out to the measurement of DC characteristic, obtains the size that tested IGBT power device leaks pressure and leakage current under different grid voltages, calculates the DC Steady power of IGBT power device;
Step 202: the Peak Junction Temperature being detected IGBT power device by thermal microscope, is obtained Peak Junction Temperature value and the infrared microscopy thermography of IGBT power device, according to Peak Junction Temperature value, calculate the peak value thermal resistance of IGBT power device;
Wherein, the method being detected the Peak Junction Temperature of IGBT power device by thermal microscope comprises as follows:
Detected the radiant flux density distribution of this IGBT power device chip by thermal microscope, radiant flux density distribution is changed the temperature value of the surperficial each point converting IGBT power device to, obtain Peak Junction Temperature.
Wherein, the method for the peak value thermal resistance of IGBT power device is calculated such as formula shown in (1):
Tj＝P*Rth(j-c)+Tc (1)
In formula, Tj is peak value thermal resistance, and unit is DEG C/W; P is DC Steady power, and unit is W; Rth (j-c) junction temperature for IGBT power device and the thermal resistance of environment temperature, unit is DEG C/W; Tc is the substrate temperature of IGBT power device, and unit is DEG C.
Step 203: according to the DC Steady power of IGBT power device, Peak Junction Temperature and peak value thermal resistance, obtain the relation of Peak Junction Temperature and DC Steady power and the relation of peak value thermal resistance and DC Steady power respectively by Mathematical Fitting method;
Step 204: according to Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, infrared microscopy thermography is analyzed, obtains the testing result of the reliability of IGBT power device.
Wherein, the method that infrared microscopy thermography is analyzed is comprised the steps:
According to the device architecture of the epitaxial material of IGBT power device, IGBT power device, Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, the thermographic hot spot of infrared microscopy is analyzed, judges the reliability of described IGBT power device.
In embodiments of the present invention, environment temperature is 70 DEG C, at three kinds of devices, is respectively device A, device B and device C, and for the device of different epitaxial material and different components structure, the Peak Junction Temperature of measuring element under different bias conditions, specifically in table one.Device A is identical with device B structure, and material is different.Device A is identical with device C material, and structure is different.
The Peak Junction Temperature table of measuring element under the bias condition that table 1 is different
Wherein provide the bias condition added by device of different epitaxial material and different components structure.By proprietary software image data on infrared microscopy equipment, obtain the infrared microscopy thermography of the device of different epitaxial material and different components structure.
See Fig. 1, Fig. 2 and Fig. 3, the A of device as shown in Figure 1 with same material and the structure of device C are as shown in Figure 2 contrasted.Find that the source and drain spacing of the source and drain gap ratio device A (thermal resistance value is 8-9 DEG C/W) of device C (thermal resistance value is 6.9 DEG C/W) is large.Illustrate that the source and drain spacing of device has certain influence to thermal resistance value.
The infrared microscopy thermography of analysis device, namely by the infrared microscopy thermography of device, distributes from the junction temperature of device, the junction temperature distribution of the B of device shown in Fig. 4, can find that clearly hot spot exists.Normal Infrared survey result should be on hot equally distributed device.
From infrared microscopy test result, i.e. the infrared microscopy of Fig. 5 device B, the temperature distributing disproportionation of device, local temperature is too high.This is thought may be thinning relevant with device, and device injustice causes device local temperature too high; Also may be that in encapsulation, the insufficient local temperature caused of contact portion is too high.
In the present invention, because IGBT power device is temperature sensor, the characterisitic parameter increasing device with junction temperature will vary widely.And thermal sensitive parameter changes device greatly, often by the initial failure device of inner latent defect.At short notice super-stable state power is applied to device, make device junction temperature rapidly close to or reach maximum allowable junction temperature, junction temperature detects, and is the good approach seeking power and junction temperature corresponding relation.
The test of IGBT power device steady state operation life is mostly carry out under the condition of the gentle corresponding maximum rated power of certain shell.Through type (1), can obtain the peak value thermal resistance that different structure device is corresponding.The measurement of Peak Junction Temperature is the prerequisite drafting highly reliable device screening stress, device screening has the device of hidden danger for the device or rejecting of rejecting initial failure, the achieved reliability feature of reflection device under certain power work, thus realize the effective evaluation to device thermal reliability.
The thermal resistance of device is with the fluctuation of DC Steady power, and usual thermal resistance fluctuation is larger, and device thermal reliability is lower.Device thermal resistance is not constant simultaneously, mainly changes with temperature.Estimate the thermal resistance value under different junction temperature, by the thermal resistance of Infrared survey device, obtain the rate of change of thermal resistance with junction temperature, the degree of reliability of device can be doped comparatively accurately.The method that infrared microscopy is measured as can be seen here can as the important characterization method weighing device thermal reliability.
A kind of method detecting IGBT power device reliability that the embodiment of the present invention provides, its beneficial effect is as follows:
The method of I, measurement IGBT power device reliability provided by the invention, first the measuring method of infrared microscopy is adopted, obtain the infrared microscopy thermography of various substrates materials and devices, thus obtain device Peak Junction Temperature of (corresponding operating voltage and working current) at different substrate temperature and bias condition, and then obtain the thermal resistance of this device, by contrast different structure and the infrared microscopy thermography of material devices and the size of thermal resistance, the homogeneity of device junction temperature distribution, carries out the evaluation of the material of device, technique and device architecture quality.
2, the method for measurement IGBT power device reliability provided by the invention, be a kind of method of effectively carrying out IGBT power device thermal reliability and characterizing, a kind of simple and easy exercisable method of the method employing achieves the entry evaluation to IGBT power device reliability.
3, the method for measurement IGBT power device thermal reliability provided by the invention, in the Peak Junction Temperature obtaining device and the thermographic basis of infrared microscopy, determine the thermal resistance size of IGBT power device, by contrasting the infrared microscopy thermography of different structure and material devices, the material of device, Structure and energy are carried out to Efficient Evaluation, and then achieve the preliminary assessment of IGBT power internally matched device.
4, the method for measurement IGBT power device thermal reliability provided by the invention, the one that proposes of novelty measures IGBT device infrared microscopy thermography, weak link in determining device material, technique and device architecture, provide optimal anchor direction, achieve the method to IGBT power device thermal reliability Efficient Evaluation, for device structure optimization or the improvement of device technology all has important directive significance.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to example to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (5)
1. detect a system for IGBT power device reliability, it is characterized in that, comprise DC Steady power model, peak value thermal resistance module, DC Steady power relation module and analyze reliability module;
Wherein, described DC Steady power model is used for, and measures IGBT power device and leak pressure value and leakage current value under different grid voltage, calculate the DC Steady power of described IGBT power device;
Described peak value thermal resistance module is used for, and detects the Peak Junction Temperature of described IGBT power device, obtains Peak Junction Temperature value and the infrared microscopy thermography of described IGBT power device, according to described Peak Junction Temperature value, calculates the peak value thermal resistance of described IGBT power device;
Described DC Steady power relation module is used for, according to the DC Steady power of described IGBT power device, described Peak Junction Temperature and described peak value thermal resistance, obtain the relation of Peak Junction Temperature and DC Steady power and the relation of peak value thermal resistance and DC Steady power respectively by Mathematical Fitting method;
Described analysis reliability module is used for, and according to Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, analyzes, obtain the testing result of the reliability of described IGBT power device to described infrared microscopy thermography.
2. detect a method for IGBT power device reliability, it is characterized in that, comprise the steps:
Measure IGBT power device and leak pressure value and leakage current value under different grid voltage, calculate the DC Steady power of described IGBT power device;
Detect the Peak Junction Temperature of described IGBT power device, obtain Peak Junction Temperature value and the infrared microscopy thermography of described IGBT power device, according to described Peak Junction Temperature value, calculate the peak value thermal resistance of described IGBT power device;
According to the DC Steady power of described IGBT power device, described Peak Junction Temperature and described peak value thermal resistance, obtain the relation of Peak Junction Temperature and DC Steady power and the relation of peak value thermal resistance and DC Steady power respectively by Mathematical Fitting method;
According to Peak Junction Temperature and the relation of DC Steady power and the relation of peak value thermal resistance and DC Steady power, described infrared microscopy thermography is analyzed, obtains the testing result of the reliability of described IGBT power device.
3. method according to claim 2, is characterized in that, the method for the Peak Junction Temperature of described detection described IGBT power device comprises as follows:
By the radiant flux density distribution of described infrared microscopy thermal imagery equipment Inspection IGBT power device chip described in this, described radiant flux density distribution is changed the temperature value of the surperficial each point converting described IGBT power device to, obtain described Peak Junction Temperature.
4. method according to claim 2, is characterized in that, described in calculate the method for the peak value thermal resistance of IGBT power device such as formula shown in (1):
Tj＝P*Rth(j-c)+Tc (1)
In formula, Tj is peak value thermal resistance, and unit is DEG C/W; P is DC Steady power, and unit is W; Rth (j-c) junction temperature for IGBT power device and the thermal resistance of environment temperature, unit is DEG C/W; Tc is the substrate temperature of IGBT power device, and unit is DEG C.
5. method according to claim 2, is characterized in that, describedly comprises the steps: the method that infrared microscopy thermography is analyzed
According to the epitaxial material of described IGBT power device, the device architecture of described IGBT power device, described Peak Junction Temperature and the relation of DC Steady power and the relation of described peak value thermal resistance and DC Steady power, the thermographic hot spot of described infrared microscopy is analyzed, judges the reliability of described IGBT power device.
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| CN106226672A (en) * | 2016-08-01 | 2016-12-14 | 北京工业大学 | The thermal reliability evaluation methodology of GaN base HEMT device |
| CN110632489A (en) * | 2019-09-03 | 2019-12-31 | 清华大学 | Leakage current-based IGBT junction temperature monitoring circuit and method |
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