CN203337775U - An IGBT status detecting circuit - Google Patents
An IGBT status detecting circuit Download PDFInfo
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- CN203337775U CN203337775U CN2013203389760U CN201320338976U CN203337775U CN 203337775 U CN203337775 U CN 203337775U CN 2013203389760 U CN2013203389760 U CN 2013203389760U CN 201320338976 U CN201320338976 U CN 201320338976U CN 203337775 U CN203337775 U CN 203337775U
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Abstract
The utility model discloses an IGBT status detecting circuit comprising an input high voltage protection circuit, an IGBT collector-emitter voltage detecting circuit, and a fault driving alarm circuit. The positive input end of the input high voltage protection circuit is connected with the collector electrode of an IGBT, while the negative input end of the input high voltage protection circuit is connected with the emitter electrode of the IGBT. A first diode is disposed between the positive input end and the positive output end of the input high voltage protection circuit. The input end of the IGBT collector-emitter voltage detecting circuit is connected with the output end of the input high voltage protection circuit. The IGBT collector-emitter voltage detecting circuit is used for voltage conversion and output of the input high voltage protection circuit. The input end of the fault driving alarm circuit is connected with the output end of the IGBT collector-emitter voltage detecting circuit through a triode. The fault driving alarm circuit is used for responding to an IGBT status signal, fault alarm, and output. Using a manner of driving the triode with the voltage between the collector and the emitter of the IGBT, the IGBT status detecting circuit is not only capable of performing detection when the IGBT is in an on state, but also capable of detecting the status of the IGBT in an off state and accurately determining the short circuit status of the IGBT. The IGBT status detecting circuit has characteristics of a simple circuit, low cost, and high reliability.
Description
Technical field
The utility model relates to a kind of state detection circuit, especially a kind of IGBT state detection circuit.
Background technology
Fan converter power model IGBT operates mainly in following state: open, shutoff, short-circuit condition.And the principle that detects IGBT is foundation: IGBT different conditions and its C(collector), the E(emitter) between voltage, the switching signal of master control system be one-to-one relationship, so the voltage detected between C, E just can be known the state of IGBT.As following table:
Provide at present the major way of IGBT state-detection to have: 1, use integrated driver module, this detection module can only detect when IGBT opens, and price is high; 2, use stabilivolt to add series connection optocoupler pattern, when this detecting pattern can only detect the IGBT short circuit between its C, E voltage higher than the situation of driving power voltage, if between C, E, voltage is lower than driving power voltage, can not accurately judge, and have larger time delay, can not accomplish real-time detection.
The utility model content
For solving the problems of the technologies described above, the purpose of this utility model is to provide a kind of IGBT state detection circuit.
The technical solution adopted in the utility model is: a kind of IGBT state detection circuit, comprise the input high tension protection circuit, its positive and negative input end is connected with IGBT collector, IGBT emitter respectively, be provided with the first diode between the positive input terminal of described input high tension protection circuit and positive output end, the negative pole of described the first diode is connected with the IGBT collector;
The C of IGBT, E voltage detecting circuit, its input end with for inputting the high tension protection circuit output terminal, be connected, for voltage transitions and the output of inputting high tension protection circuit;
Fault drives warning circuit, and its input end is connected with the C of IGBT, the output terminal of E voltage detecting circuit by a triode, for status signal and fault alarm and the output that responds IGBT.
The C of described IGBT, E voltage detecting circuit comprise: the first resistance that an end is connected with the positive pole of the first diode; The second resistance be connected with the first resistance other end and the 3rd resistance; Negative pole and the stabilivolt be connected away from an end of the first resistance on the 3rd resistance; All be connected to the 3rd diode, the first electric capacity, the 4th resistance between stabilivolt positive pole and IGBT emitter; Wherein, the second resistance connects input voltage, and the positive pole of the 3rd diode is connected with the IGBT emitter.
Described fault drives warning circuit to comprise: the first triode, and its base stage is connected respectively stabilivolt positive pole, IGBT emitter with emitter; Opto-coupler chip, comprise LED and light-operated triode, described LED negative pole is connected with the first transistor collector, described LED positive pole connects input voltage by the 5th resistance, be connected with the second electric capacity between described light-operated transistor emitter ground connection and its collector and emitter, its collector also connects power input by the 6th resistance, and its collector is also as IGBT status signal output terminal.
The model of described opto-coupler chip is TLP521-1.
The beneficial effects of the utility model:
The utility model IGBT state detection circuit utilizes the mode of voltage driving triode between IGBT upper C, E, can not only when the IGBT conducting, detect, can also when turn-offing, IGBT detect its state, and can accurately judge the short-circuit condition of IGBT, and the utility model circuit is simple, cost is low, reliability is high.
The accompanying drawing explanation
Below in conjunction with accompanying drawing, embodiment of the present utility model is described further.
Fig. 1 is the circuit diagram of the utility model IGBT state detection circuit.
Embodiment
As shown in Figure 1, a kind of IGBT state detection circuit comprises:
Input high tension protection circuit 1, its positive and negative input end is connected with IGBT collector IGBT-C, IGBT emitter IGBT-E respectively, be provided with the first diode D1 between the positive input terminal of described input high tension protection circuit 1 and positive output end, the model of the first diode D1 is BY203-20S, and the negative pole of described the first diode D1 is connected with IGBT collector IGBT-C;
The C of IGBT, E voltage detecting circuit 2, its input end with for inputting high tension protection circuit 1 output terminal, be connected, for voltage transitions and the output of inputting high tension protection circuit 1;
Fault drives warning circuit 3, and its input end is connected with the C of IGBT, the output terminal of E voltage detecting circuit 2 by a triode, for status signal and fault alarm and the output that responds IGBT.
As shown in the figure, the C of IGBT, E voltage detecting circuit 2 comprise: the first resistance R 1 that an end is connected with the positive pole of the first diode D1; The second resistance R 2 and the 3rd resistance R 3 that with first resistance R 1 other end, are connected; Negative pole and the stabilivolt ZD2 be connected away from an end of the first resistance R 1 on the 3rd resistance R 3; All be connected to the 3rd diode D3, the first capacitor C 1, the 4th resistance R 4 between stabilivolt ZD2 positive pole and IGBT emitter IGBT-E; Wherein, the second resistance R 2 access+15v voltages, the positive pole of the 3rd diode D3 is connected with IGBT emitter IGBT-E.
As shown in the figure, fault drives warning circuit 3 to comprise: the first triode Q1, and its base stage is connected respectively stabilivolt ZD2 positive pole, IGBT emitter IGBT-E with emitter; Opto-coupler chip U15, comprise LED and light-operated triode, the LED negative pole is connected with the first triode Q1 collector, LED is anodal by the 5th resistance R 5 access+15v voltages, be connected with the second capacitor C 2 between light-operated transistor emitter ground connection and its collector and emitter, its collector also meets power input VCC by the 6th resistance R 6, and its collector is also as IGBT status signal output terminal IGBT-ERR.
Wherein, the model of opto-coupler chip U15 is TLP521-1.
Principle of work of the present utility model is:
As IGBT during in conducting state, the C of IGBT, E voltage difference are several volts, in C by IGBT, E voltage detecting circuit 2, the second resistance R 2 access+15v voltages can make the first diode D1 conducting, therefore, A point (tie point of R1, R2, R3) voltage is clamped to the C point voltage of IGBT, the first triode Q1 can not obtain bias voltage by stabilivolt ZD2, therefore Q1 cut-off, and by optocoupler U15 send low level signal and in conjunction with master control system the control command of opening to IGBT, to respond out the output signal of IGBT in conducting state;
As IGBT during in off state, the C of IGBT, E voltage difference are supreme kilovolt of several hectovolts, access+15v undertension of the second resistance R 2 is so that the first diode D1 conducting, but can puncture stabilivolt ZD2 by R2, R3, therefore, the first triode Q1 obtains bias voltage, in conducting and by optocoupler U15 respond out high level signal and in conjunction with master control system the shutoff control command to IGBT, the output signal of IGBT in off state.
When master control system, the control command position of IGBT is opened and IGBT during in short-circuit condition, the C of IGBT, E voltage difference are tens volts supreme kilovolt, access+15v undertension of the second resistance R 2 is so that the first diode D1 conducting, but can puncture stabilivolt ZD2 by R2, R3, therefore, the first triode Q1 obtains bias voltage, in conducting and respond out voltage between C, the E of IGBT by optocoupler U15, and can characterize IGBT in short-circuit condition in conjunction with master control system to the control command of IGBT.In like manner, when master control system, the control command position of IGBT is turn-offed and IGBT during in short-circuit condition, the C of IGBT, E voltage difference are several volts.
The utility model IGBT state detection circuit utilizes the mode of voltage driving triode between IGBT upper C, E, can not only when the IGBT conducting, detect, can also when turn-offing, IGBT detect its state, and can accurately judge the short-circuit condition of IGBT, and the utility model circuit is simple, cost is low, reliability is high.
The foregoing is only preferential embodiment of the present utility model, the utility model is not limited to above-mentioned embodiment, as long as within realizing that with basic identical means the technical scheme of the utility model purpose all belongs to protection domain of the present utility model.
Claims (4)
1. an IGBT state detection circuit is characterized in that comprising:
Input high tension protection circuit (1), its positive and negative input end is connected with collector (IGBT-C), the emitter (IGBT-E) of IGBT respectively, be provided with the first diode (D1) between the positive input terminal of described input high tension protection circuit (1) and positive output end, the negative pole of described the first diode (D1) is connected with the collector (IGBT-C) of IGBT;
The C of IGBT, E voltage detecting circuit (2), its input end is connected with input high tension protection circuit (1) output terminal, for inputting voltage transitions and the output of high tension protection circuit (1);
Fault drives warning circuit (3), and its input end is connected with the C of IGBT, the output terminal of E voltage detecting circuit (2) by a triode, for status signal and fault alarm and the output that responds IGBT.
2. a kind of IGBT state detection circuit according to claim 1, it is characterized in that: the C of described IGBT, E voltage detecting circuit (2) comprising: the first resistance (R1) that an end is connected with the positive pole of the first diode (D1); The second resistance (R2) be connected with the first resistance (R1) other end and the 3rd resistance (R3); Negative pole and the upper stabilivolt (ZD2) be connected away from an end of the first resistance (R1) of the 3rd resistance (R3); All be connected to the 3rd diode (D3), the first electric capacity (C1), the 4th resistance (R4) between stabilivolt (ZD2) positive pole and IGBT emitter (IGBT-E); Wherein, the second resistance (R2) connects input voltage, and the positive pole of the 3rd diode (D3) is connected with IGBT emitter (IGBT-E).
3. a kind of IGBT state detection circuit according to claim 2, it is characterized in that: described fault drives warning circuit (3) to comprise: the first triode (Q1), and its base stage is connected respectively stabilivolt (ZD2) positive pole, IGBT emitter (IGBT-E) with emitter; Opto-coupler chip (U15), comprise LED and light-operated triode, described LED negative pole is connected with the first triode (Q1) collector, described LED is anodal connects input voltage by the 5th resistance (R5), be connected with the second electric capacity (C2) between described light-operated transistor emitter ground connection and its collector and emitter, its collector also connects power input (VCC) by the 6th resistance (R6), and its collector is also as IGBT status signal output terminal (IGBT-ERR).
4. a kind of IGBT state detection circuit according to claim 3, it is characterized in that: the model of described opto-coupler chip (U15) is TLP521-1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203389760U CN203337775U (en) | 2013-06-13 | 2013-06-13 | An IGBT status detecting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203389760U CN203337775U (en) | 2013-06-13 | 2013-06-13 | An IGBT status detecting circuit |
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| CN203337775U true CN203337775U (en) | 2013-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013203389760U Expired - Fee Related CN203337775U (en) | 2013-06-13 | 2013-06-13 | An IGBT status detecting circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103336235A (en) * | 2013-06-13 | 2013-10-02 | 广东明阳龙源电力电子有限公司 | IGBT condition detection circuit |
| CN104569774A (en) * | 2014-05-08 | 2015-04-29 | 江苏中科君芯科技有限公司 | System and method detecting reliability of IGBT power device |
| CN112213609A (en) * | 2019-12-27 | 2021-01-12 | 电子科技大学 | System and method for measuring voltage between IGBT collector and emitter without stopping |
-
2013
- 2013-06-13 CN CN2013203389760U patent/CN203337775U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103336235A (en) * | 2013-06-13 | 2013-10-02 | 广东明阳龙源电力电子有限公司 | IGBT condition detection circuit |
| CN104569774A (en) * | 2014-05-08 | 2015-04-29 | 江苏中科君芯科技有限公司 | System and method detecting reliability of IGBT power device |
| CN112213609A (en) * | 2019-12-27 | 2021-01-12 | 电子科技大学 | System and method for measuring voltage between IGBT collector and emitter without stopping |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131211 Termination date: 20190613 |
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| CF01 | Termination of patent right due to non-payment of annual fee |