CN102969704A - Pre-charging circuit - Google Patents
Pre-charging circuit Download PDFInfo
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- CN102969704A CN102969704A CN2012104375962A CN201210437596A CN102969704A CN 102969704 A CN102969704 A CN 102969704A CN 2012104375962 A CN2012104375962 A CN 2012104375962A CN 201210437596 A CN201210437596 A CN 201210437596A CN 102969704 A CN102969704 A CN 102969704A
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Abstract
The invention discloses a pre-charging circuit. One end of a resistor R1 is connected with a single chip microcomputer (1), and the other end of the resistor R1 is connected with a base electrode of an audion Q1. One end of a resistor 2 is connected with a base electrode of the audion Q1, and the other end is grounded. One end of a resistor R3 is connected with a collector electrode of the audion Q1, and the other end of the resistor R3 is connected with a voltage to current converter (VCC). An emitting electrode of the audion Q1 is grounded. One end of a resistor R4 is connected with the collector electrode of the audion Q1, and the other end of the resistor R4 is connected with a base electrode of an audion Q2. One end of a capacitor C1 is connected with the collector electrode of the audion Q1, and the other end of the capacitor C1 is connected with the base electrode of an audion Q2. One end of a resistor R5 is connected with a collector electrode of the audion Q2, and the other end of the resistor R5 is grounded. One end of a resistor R6 is connected with an emitting electrode of the audion Q3, and the other end of the resistor R6 is connected with a grid electrode of a transistor T1. One end of a resistor 7 is connected with the grid electrode of the transistor T1, and the other end of the resistor 7 is grounded. One end of a resistor R8 is grounded, and the other end of the transistor T1 is connected with a source electrode of the transistor T1. The pre-charging circuit aims at overcoming the shortcomings in the prior art and is simple and reliable in structure and low in cost.
Description
Technical field
The invention belongs to the protective circuit device field of limiting overcurrent or overvoltage and not cutting off circuit, be specifically related to a kind of pre-charge circuit that uses the on-off action realization soft start of mosfet transistor.
Background technology:
In order to realize the load pressure stabilization function to electricity consumption, the load two ends are connected with electric capacity of voltage regulation usually, but circuit is when beginning to power, and in the moment of switch closure, electric capacity can produce very large electric current, impacts electric capacity of voltage regulation, so that electric capacity of voltage regulation is equivalent to open circuit.Therefore, need to carry out the soft start of circuit for this situation, pre-charge circuit namely is set.Traditional pre-charge circuit is thereby that the protective effect that pre-charge resistance and switching circuit play soft start is set, perhaps the precharge chip module by integrated form carries out the precharge protection, the former needs pre-charge resistance and switching circuit two-part structure, the structural redundancy of pre-charge circuit; The latter realizes the precharge effect by integrated chip module, and complex structure, cost are also higher.So existing Technology Need is guaranteeing to reduce cost by the oh while simplified structure of reliability.
Summary of the invention:
The objective of the invention is to overcome deficiency of the prior art, provide a kind of simple in structure, practical reliable, pre-charge circuit with low cost.
Its technical scheme is: comprising:
Produce the single-chip microcomputer of control signal;
Resistance R 3, the collector electrode of one termination triode Q1, an end of capacitor C 1, an end of resistance R 4, another termination voltage source V CC;
Triode Q1, its base stage connects respectively the end of R1 and R2, grounded emitter, an end of collector electrode connecting resistance R3, resistance R 4 and capacitor C 1;
Resistance R 4, the collector electrode of one termination triode Q1, an end of resistance R 3, an end of capacitor C 1, the base stage of another termination triode Q2, the other end of capacitor C 1;
Resistance R 5, the collector electrode of one termination triode Q2, the base stage of triode Q3, the positive pole of diode D1, other end ground connection;
Diode D1, its positive pole connects the collector electrode of triode Q2, and negative pole connects the emitter of triode Q3;
Resistance R 6, the emitter of one termination triode Q3, the negative pole of diode D1, an end of the grid of another termination mosfet transistor, resistance R 7;
Resistance R 7, the grid of one termination mosfet transistor T1, an end of resistance R 6, another termination ground connection;
Triode Q2, its base stage connects an end of R4 and capacitor C 1, and its emitter meets voltage source V CC, and its collector electrode connects the end of R5, the positive pole of diode D1, the base stage of triode Q3;
Triode Q3, its base stage connects an end of R5 resistance, the positive pole of diode D1, the collector electrode of triode Q2, and its emitter connects the negative pole of diode D1, an end of resistance R 6, its grounded collector;
Resistance R 8, one end ground connection, the source electrode of another termination mosfet transistor T1, the positive pole of diode D2;
Diode D2, its positive pole connect source electrode, the resistance R 8 of mosfet transistor T1, and negative pole connects the drain electrode of mosfet transistor T1;
Mosfet transistor T1, its grid connecting resistance R6, resistance R 7, the positive pole of its source electrode connecting resistance R8, diode D2, its drain electrode connects the negative pole of diode D2;
Resistance R 8 also is connected to single-chip microcomputer with the end that the source electrode of mosfet transistor T1 links to each other;
The drain electrode of mosfet transistor T1 also is connected to an end of load, and the other end of load is connected to DC power supply, and the two ends of load are parallel with capacitor C 2.
Diode D2 is Transient Suppression Diode.
Resistance R 8 is constantan wire.
Resistance R 8 is connected to single-chip microcomputer with the end that the source electrode of mosfet transistor T1 links to each other, thereby formation is to the effect of the current acquisition at the source electrode place of mosfet transistor T1.
State single-chip microcomputer and be output as frequency greater than the square wave of 1KHZ by resistance R 1, the duty ratio of square wave is increased to 1 gradually from 0, and then duty ratio is kept 1 constant.
The voltage magnitude of voltage source V CC and the single-chip microcomputer amplitude by the square wave of resistance R 1 output need satisfy is operated under the state of conducting or cut-off triode Q1, triode Q2, triode Q3, mosfet transistor T1; Amplitude such as voltage source V CC is 15V, and the high level of square wave is that 5V, low level are 0V.
Than traditional pre-charge circuit, the present invention has significant advantage and beneficial effect, is embodied as:
1. this pre-charge circuit is simple in structure, with respect to pre-charge resistance formula circuit, simple for structure effective; With respect to integrated form precharge chip module, designs simplification is not redundant, can effectively reduce the manufacturing cost of pre-charge circuit.
2. this pre-charge circuit does not reduce the reliability of this pre-charge circuit in simplified structure, be provided with in the circuit, and current acquisition, the electronic structures such as pressure limiting voltage stabilizing have guaranteed the job stability of this pre-charge circuit.
3. this pre-charge circuit utilizes the on-off action of mosfet transistor, and is larger at the operating current of load, and the electric capacity of voltage regulation of load hour, also can guarantee the steady operation of pre-charge circuit.
Description of drawings
Fig. 1 is the circuit diagram of pre-charge circuit of the present invention.
Embodiment
Narrate the specific embodiment of the present invention below in conjunction with accompanying drawing; below in conjunction with accompanying drawing the embodiment of the invention is further described; below just exemplary about the description of embodiments of the present invention; the claimed theme that is not meant to limit the present invention; other variations in the claim protection range for embodiment described in the invention also exists all belong to the theme that will protect required for the present invention.
Such as accompanying drawing 1, in this pre-charge circuit, single-chip microcomputer 1 links to each other with the end of R1; The end single-chip microcomputer 1 of R1, the base stage of another termination triode Q1; The base stage of one termination triode Q1 of resistance R 2, other end ground connection; One termination voltage source VCC of resistance R 3, the collector electrode of another termination triode Q1; The collector electrode of one termination triode Q1 of resistance R 4, the base stage of another termination triode Q2; The collector electrode of one termination triode Q1 of capacitor C 2, the base stage of another termination triode Q2; The end of the base stage connecting resistance R1 of triode Q1, an end of resistance R 2, an end of the end of collector electrode connecting resistance R3, an end of resistance R 4, capacitor C 1, grounded emitter; The collector electrode of one termination triode Q2 of resistance R 5, other end ground connection; Diode D1 positive pole connects the collector electrode of triode Q1, and negative pole connects the emitter of triode Q3; The emitter of one termination triode Q3 of resistance R 6, the grid of another termination mosfet transistor T1; The grid of one termination mosfet transistor of resistance R 7, other end ground connection; One end of the collector electrode that meets triode Q2 of triode Q3, the positive pole of diode D1, resistance R 5; Emitter connects the negative pole of diode D1, an end of resistance R 6; The source electrode of one termination mosfet transistor T1 of resistance R 8, other end ground connection, the positive pole of diode D2 connects the source electrode of mosfet transistor T1, and negative pole connects the drain electrode of mosfet transistor T1; The grid connecting resistance R6 of mosfet transistor T1, resistance R 7, drain electrode connects the negative pole of diode D2, and source electrode connects the positive pole of diode D2, an end of resistance R 8.
Outside upper circuit structure, the drain electrode of mosfet transistor T1 also is connected to load 2, and the other end of load 2 is connected to power supply 3, and the two ends of load 2 are parallel with capacitor C 2.Resistance R 8 also is connected to single-chip microcomputer 1 with the end that the source electrode of mosfet transistor T1 links to each other.
Resistance R 8 be constantan wire, be used for gathering the current value of place circuit, can bear larger electric current, and will collect current signal transfer to single-chip microcomputer 1, single-chip microcomputer 1 receives the current signal that collects, and whether current electric current is surpassed the control that threshold value judges.Diode D2 is Transient Suppression Diode, act as the source electrode of restriction mosfet transistor TI and the voltage between drain electrode, prevent mosfet transistor T1 because of source electrode and the voltage between drain electrode excessive and breakdown or burn out.The voltage that act as the steady load two ends of capacitor C 2 prevents that the load two ends from producing overvoltage or under-voltage because of the unexpected variation of voltage.
Single-chip microcomputer 1 is output as frequency greater than the square wave of 1KHZ by resistance R 1, and the duty ratio of square wave is increased to 1 gradually from 0, and it is shorter that duty ratio was increased to for 1 time that needs gradually from 0, and such as 1s, then duty ratio is kept 1 constant.Capacitor C 1 act as booster response, accelerate triode Q2 with respect to the frequency response speed of triode Q1.
The voltage magnitude of voltage source V CC and single-chip microcomputer 1 amplitude by the square wave of resistance R 1 output need satisfy is operated under the state of conducting or cut-off triode Q1, triode Q2, triode Q3, mosfet transistor T1.Amplitude at voltage source V CC is 15V, and the high level of square wave is that 5V, low level are in the situation of 0V.When square wave is low level, triode Q1 conducting, the voltage of the collector terminal of triode Q1 is 15V, triode Q3 cut-off, mosfet transistor T1 conducting, the voltage of its gate terminal is 15V, mosfet transistor T1 is equivalent to short circuit at this moment; When square wave is high level, triode Q1 cut-off, the voltage of the collector terminal of triode Q1 is 0V, triode Q3 conducting, mosfet transistor T1 cut-off, the voltage of its gate terminal is 0V, mosfet transistor T1 is quite at this moment in opening circuit.
By the continuous switching of mosfet transistor T1 conducting and cut-off, thereby the load 2 that is parallel with electric capacity of voltage regulation C2 is formed soft start.
For being example embodiment of the present invention; should be understood to is wherein a certain demonstrative example in the protection range of claims of the present invention; have the directiveness effect that those skilled in the art is realized corresponding technical scheme, but not limitation of the invention.
Claims (6)
1. pre-charge circuit is characterized in that: comprising:
Produce the single-chip microcomputer (1) of control signal;
Resistance R 1, the one end links to each other with single-chip microcomputer (1), the base stage of another termination triode Q1, an end of resistance R 2;
Resistance R 2, the base stage of one termination triode Q1, an end of resistance R 1, other end ground connection;
Resistance R 3, the collector electrode of one termination triode Q1, an end of capacitor C 1, an end of resistance R 4, another termination voltage source V CC;
Triode Q1, its base stage connects respectively the end of R1 and R2, grounded emitter, an end of collector electrode connecting resistance R3, resistance R 4 and capacitor C 1;
Resistance R 4, the collector electrode of one termination triode Q1, an end of resistance R 3, an end of capacitor C 1, the base stage of another termination triode Q2, the other end of capacitor C 1;
Capacitor C 1, the collector electrode of one termination triode Q1, an end of resistance R 3, an end of resistance R 4, the base stage of another termination triode Q2, the other end of resistance R 4;
Resistance R 5, the collector electrode of one termination triode Q2, the base stage of triode Q3, the positive pole of diode D1, other end ground connection;
Diode D1, its positive pole connects the collector electrode of triode Q2, and negative pole connects the emitter of triode Q3;
Resistance R 6, the emitter of one termination triode Q3, the negative pole of diode D1, an end of the grid of another termination mosfet transistor, resistance R 7;
Resistance R 7, the grid of one termination mosfet transistor T1, an end of resistance R 6, another termination ground connection;
Triode Q2, its base stage connects an end of R4 and capacitor C 1, and its emitter meets voltage source V CC, and its collector electrode connects the end of R5, the positive pole of diode D1, the base stage of triode Q3;
Triode Q3, its base stage connects an end of R5 resistance, the positive pole of diode D1, the collector electrode of triode Q2, and its emitter connects the negative pole of diode D1, an end of resistance R 6, its grounded collector;
Resistance R 8, one end ground connection, the source electrode of another termination mosfet transistor T1, the positive pole of diode D2;
Diode D2, its positive pole connect source electrode, the resistance R 8 of mosfet transistor T1, and negative pole connects the drain electrode of mosfet transistor T1;
Mosfet transistor T1, its grid connecting resistance R6, resistance R 7, the positive pole of its source electrode connecting resistance R8, diode D2, its drain electrode connects the negative pole of diode D2;
The end that resistance R 8 links to each other with the source electrode of mosfet transistor T1 also is connected to single-chip microcomputer (1);
The drain electrode of mosfet transistor T1 also is connected to an end of load (2), and the other end of load (2) is connected to DC power supply (3), and the two ends of load (2) are parallel with capacitor C 2.
2. pre-charge circuit according to claim 1, it is characterized in that: described diode D2 is Transient Suppression Diode.
3. pre-charge circuit according to claim 1 is characterized in that: described resistance R 8 is constantan wire.
4. according to claim 1 or pre-charge circuit claimed in claim 3, it is characterized in that: the end that described resistance R 8 links to each other with the source electrode of mosfet transistor T1 is connected to single-chip microcomputer (1), thereby formation is to the effect of the current acquisition at the source electrode place of mosfet transistor T1.
5. pre-charge circuit according to claim 1, it is characterized in that: described single-chip microcomputer (1) is output as frequency greater than the square wave of 1KHZ by resistance R 1, and the duty ratio of square wave is increased to 1 gradually from 0, and then duty ratio is kept 1 constant.
6. it is characterized in that according to claim 1 or pre-charge circuit claimed in claim 5; The voltage magnitude of described voltage source V CC and single-chip microcomputer (1) amplitude by the square wave of resistance R 1 output need satisfy is operated under the state of conducting or cut-off triode Q1, triode Q2, triode Q3, mosfet transistor T1; Amplitude such as voltage source V CC is 15V, and the high level of square wave is that 5V, low level are 0V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210437596.2A CN102969704B (en) | 2012-11-06 | 2012-11-06 | A kind of pre-charge circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210437596.2A CN102969704B (en) | 2012-11-06 | 2012-11-06 | A kind of pre-charge circuit |
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| CN102969704A true CN102969704A (en) | 2013-03-13 |
| CN102969704B CN102969704B (en) | 2018-01-12 |
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| CN201210437596.2A Active CN102969704B (en) | 2012-11-06 | 2012-11-06 | A kind of pre-charge circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107069857A (en) * | 2017-03-30 | 2017-08-18 | 合肥华耀电子工业有限公司 | A kind of battery charger |
| CN107768195A (en) * | 2016-08-18 | 2018-03-06 | 昆山国力源通新能源科技有限公司 | Pre-charge circuit built in D.C. contactor and its control method |
| CN109802573A (en) * | 2019-01-30 | 2019-05-24 | 西安微电子技术研究所 | A kind of current source PWM controller and Magnetic isolation feedback driving circuit and DC/DC converter based on it |
| CN110308391A (en) * | 2019-06-07 | 2019-10-08 | 横店集团英洛华电气有限公司 | A kind of low cost current of electric Acquisition Circuit and its acquisition method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107768195A (en) * | 2016-08-18 | 2018-03-06 | 昆山国力源通新能源科技有限公司 | Pre-charge circuit built in D.C. contactor and its control method |
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| CN109802573A (en) * | 2019-01-30 | 2019-05-24 | 西安微电子技术研究所 | A kind of current source PWM controller and Magnetic isolation feedback driving circuit and DC/DC converter based on it |
| CN109802573B (en) * | 2019-01-30 | 2020-04-17 | 西安微电子技术研究所 | Magnetic isolation feedback drive circuit based on current type pulse width modulation controller and DC/DC converter |
| CN110308391A (en) * | 2019-06-07 | 2019-10-08 | 横店集团英洛华电气有限公司 | A kind of low cost current of electric Acquisition Circuit and its acquisition method |
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| Publication number | Publication date |
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| CN102969704B (en) | 2018-01-12 |
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Effective date of registration: 20191030 Address after: Room 312, floor 3, Xi'an innovation design center, No. 69, west section of south 2nd Ring Road, Xi'an City, Shaanxi Province cluster Registration No. 014 Patentee after: Shaanxi Tiantian Travel Technology Co., Ltd Address before: 300308 No., West ten, Airport Economic Zone, Dongli District Patentee before: Tianjin Santroll Electric Automobile Technology Co., Ltd. |