CN102955112B - Method for pre-screening direct-current steady state power aging in GaN-based devices - Google Patents
Method for pre-screening direct-current steady state power aging in GaN-based devices Download PDFInfo
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Abstract
The invention discloses a method for pre-screening direct-current steady state power aging in GaN-based devices. The method includes: subjecting a GaN-based device to be tested to package testing so as to determine direct-current steady state power of the GaN-based device; measuring junction temperature of the device by an infrared microscopic thermographer, subjecting the measured junction temperature to mathematical fitting to obtain relation of the tested GaN-based device between peak junction temperature and the direct-current steady state power, and determining conditions for direct-current steady state power aging of the tested GaN-based device; subjecting the tested GaN-based device to direct-current steady state power aging to obtain time-based changing curves of characteristic parameters of the tested GaN-based device; determining level-off threshold time of the characteristic parameters of the device according to the time-based changing curves of the characteristic parameters of the GaN-based device, and determining the time of the device for direct-current steady state power aging; subjecting the tested GaN-based devices to aging screening to remove the devices with the characteristic parameters less easily stabilizing in the threshold time, and completing pre-screening of direct-current steady state power aging in the GaN-based devices.
Description
Technical field
The present invention relates to DC Steady power aging technical field, particularly relate to a kind of method of GaN base device DC Steady power aging being carried out to prescreen.
Background technology
Steady state power is aging is apply certain electric stress continuously to device within the longer time, the various physics of device inside is accelerated by electricity, hot combined action, chemical process, impels the various latent defect of device inside to expose early, thus reaches the object rejecting initial failure device.To a series of defects that may exist in technological process, as surface stain, channel leakage, die crack, oxide layer defect etc., there is good screening effect.
The reliability of semiconductor devices is represented by the idealized curve of tub curve usually, and it is made up of 3 regions.In first region, crash rate reduces in time, is called earlier failure period.In the 2nd region, crash rate reaches steady state value, be called constant failure rate period or serviceable life district.In the 3rd region, crash rate increases in time, is called wear-out failure period.In first region i.e. in earlier failure period, device parameters is unstable, and component failure rate is high.In constant failure rate period, device parameters tends towards stability afterwards.Time point between earlier failure period and constant failure rate period is commonly referred to as threshold time.In the process of carrying out device steady-state DC power aging, earlier failure period and the serviceable life threshold time between district of determining device, a foundation of prescreen is carried out as device, greatly can save and carry out the steady-state DC aging time, and can ensure that device is reaching stable useful life period after prescreen, add device stability in use.
The problem adopting electric power aging method screening GaN base power device most critical is the stress condition that determining device carries out steady state power burn-in screen, stress condition is too low, does not reach screening effect, stress condition too high again likely temperature exceed maximum allowable junction temperature thus cause overstress to be lost efficacy.Want to reach best screening effect, then that to carry out steady state power to device under the critical power loss condition that can bear at device aging, the method that the aging employing infrared microscopy of this steady state power is measured obtains GaN base HEMT device Peak Junction Temperature with the relation between device dissipated power, and then determining device carries out the stress condition of steady state power burn-in screen.
Summary of the invention
(1) technical matters that will solve
For achieving the above object, fundamental purpose of the present invention is to provide a kind of method of GaN base device DC Steady power aging being carried out to prescreen.
(2) technical scheme
For achieving the above object, the invention provides a kind of method that DC Steady power aging to GaN base device carries out prescreen, the method comprises:
Packaging and testing are carried out to tested GaN base device, determines the DC Steady power of tested GaN base device;
Thermal microscope is adopted to measure the junction temperature of tested GaN base device, and carry out mathematics and fit to measuring the junction temperature that obtains the relation between Peak Junction Temperature and DC Steady power obtaining tested GaN base device, determine tested GaN base device carry out DC Steady power aging condition and aging time residing environment temperature condition;
Under this tested GaN base device carries out the condition of DC Steady power aging, DC Steady power aging is carried out to tested GaN base device, obtain each characterisitic parameter of tested GaN base device curve over time;
By each characterisitic parameter of this tested GaN base device threshold time that tends towards stability of each characterisitic parameter of curve determinator part over time; And
Burn-in screen is carried out to multiple tested GaN base device, rejects component characteristic parameter in this threshold time and be difficult to stable device, realize the prescreen of the DC Steady power aging to GaN base device.
In such scheme, described packaging and testing are carried out to tested GaN base device, determine the DC Steady power of tested GaN base device, comprise: first tested GaN base device is fixed on fixture, this fixture have for suppressing and eliminating the self-oscillatory circuit of tested GaN base device, then direct supply is adopted tested GaN base device to be carried out to the measurement of DC characteristic, obtain the size that tested GaN base device leaks pressure and leakage current under different grid voltages, this leakage pressure is multiplied with leakage current and obtains the DC Steady power of tested GaN base device.
In such scheme, described employing thermal microscope measures the junction temperature of tested GaN base device, and carry out mathematics and fit to measuring the junction temperature that obtains the relation between Peak Junction Temperature and DC Steady power obtaining tested GaN base device, determine tested GaN base device carry out DC Steady power aging condition and aging time residing environment temperature condition, comprise: adopt thermal microscope to measure the junction temperature of tested GaN base device, obtain junction temperature distribution and the Peak Junction Temperature of tested GaN base device, then by Origin software to measuring the junction temperature distribution that obtains and Peak Junction Temperature is carried out mathematics and fitted, obtain between the Peak Junction Temperature of device and DC Steady power and relation curve residing for Peak Junction Temperature and device between environment temperature, and then determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve.
In such scheme, described employing thermal microscope measures the junction temperature of tested GaN base device, obtains junction temperature distribution and the Peak Junction Temperature of tested GaN base device, comprising: the temperature of fixture controls at 70 DEG C by software by thermal microscope; Adopt the device of single tube encapsulation to be arranged on this fixture, this fixture realizes the self-oscillatory suppression of device, the DC Steady power of output device by suppressing oscillatory circuit; Thermal microscope is distributed by the radiant flux density of detection chip, is converted into the temperature value of surperficial each point by computer software, determines junction temperature distribution and the Peak Junction Temperature of tested GaN base device.
In such scheme, describedly determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve, the temperature of residing environment temperature and substrate when determining that tested GaN base device carries out DC Steady power aging, drain terminal voltage and drain terminal electric current, wherein the temperature of substrate is determined by the method for infrared microscopy, and drain terminal voltage and drain terminal electric current obtain the measurement that tested GaN base device carries out DC characteristic by adopting direct supply.
In such scheme, describedly determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve, comprise: under different grid voltages, leaking pressure and leakage current by measuring the tested GaN base device obtained, calculating the DC power of tested GaN base device; By the mathematical analysis software of Origin, obtain the mathematical relation curve of Peak Junction Temperature and corresponding DC Steady power; By measuring the result obtained at different substrate temperature, obtain the relation between the Peak Junction Temperature of device at varying environment temperature and DC Steady power.
In such scheme, described tested GaN base device carries out the condition of DC Steady power aging, comprise: the junction temperature distribution adopting thermal microscope measuring element, its environment temperature controls at 70 DEG C, Tjm is reached and continuous working owing to making junction temperature, at the device of low-voltage low power consumption junction temperature distribution, when high voltage large power consumption, junction temperature distribution may become extremely uneven, there will be obvious hot spot, even cause component failure, and environment affects less on the junction temperature of device and thermal resistance, so when drafting screening conditions, carry out under the condition that should reduce dissipated power improving the environment temperature of device and reduce added device drain terminal voltage, so tested GaN base device is under the condition lower than 175 DEG C of junction temperatures, adopt environment temperature 70 DEG C, bias condition is drain voltage Vd=25V, leakage current Id=200mA.
In such scheme, each characterisitic parameter of described tested GaN base device comprises: the size of the drain terminal electric current of device, threshold voltage, mutual conductance, Schottky cut-in voltage and reverse leakage current.
In such scheme, described by each characterisitic parameter of this tested GaN base device threshold time that tends towards stability of each characterisitic parameter of curve determinator part over time, be by each characterisitic parameter of this tested GaN base device over time curve determine the time that tested GaN base component characteristic parameter tends towards stability, and determine that this time of tending towards stability is that tested GaN base device parameters stablizes the threshold time entering the aging workspace of stable state.
In such scheme, described when carrying out burn-in screen to multiple tested GaN base device, the plurality of tested GaN base device is the GaN base device of same batch.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
1, method of GaN base device DC Steady power aging being carried out to prescreen provided by the invention, by the stress condition of infrared microscopy measuring method determination GaN device DC Steady power aging, under fixed DC Steady power condition, the aging of certain hour is carried out to device, the time point that component characteristic parameter tends to be steady is defined as the threshold time of device earlier failure period and stable useful life period, the device being difficult to reach parameter stability in threshold time is rejected, realizes the prescreen of the DC Steady power aging of GaN base device.
2, method of GaN base device DC Steady power aging being carried out to prescreen provided by the invention, for the threshold time between determining device earlier failure period and constant failure rate period, in this time interval, prescreen is carried out to the device that same batch properties parameter is consistent, in this threshold time, device parameters reaches stable device by screening, the device being difficult to tend towards stability is rejected, and realizes the aging and prescreen to GaN base HEMT device steady-state DC power.No matter the method is for the stability improving device, and the Efficient Evaluation still carrying out device reliability all has important directive significance.
Accompanying drawing explanation
Fig. 1 is the method flow diagram that the DC Steady power aging to GaN base device provided by the invention carries out prescreen;
Fig. 2 measures according to the embodiment of the present invention AlGaN/GaN HEMT device structure adopted; Wherein, Fig. 2 (a) is h device architecture, and Fig. 2 (b) is the device architecture of 75n3;
Fig. 3 adopts infrared microscopy measurement to obtain the infrared microscopy image of GaN device according to the embodiment of the present invention; Wherein, Fig. 3 (a) is the junction temperature distribution of h device, and Fig. 3 (b) is the junction temperature distribution plan of 75n3 device;
Fig. 4 is the device peak junction temperature that obtains according to the embodiment of the present invention mathematical analysis change curve with device DC Steady power;
Fig. 5 (a) is TRI structure devices Vd according to embodiment of the present invention 1#10 and Id curve over time;
Fig. 5 (b) is TRI structure devices Vg according to embodiment of the present invention 1#10 and Ig curve over time;
Fig. 6 (a) is TRI structure devices Vd according to embodiment of the present invention 1#10 and Id curve over time;
Fig. 6 (b) is TRI structure devices Vg according to embodiment of the present invention 1#10 and Ig curve over time.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Embodiment provided by the invention is by carrying out the experiment of GaN/AlGaN HEMT DC Steady power aging, preliminary screening is carried out to the reliability of device, first the method adopts the measuring method of infrared microscopy, obtain the relation of Peak Junction Temperature with DC Steady power, thus determining device stable state aging condition (operating voltage during device aging, the temperature of working current and residing substrate), the concrete property according to device carries out DC Steady power aging to device under the condition of certain DC Steady power aging.
Device initial aging time performance parameter unstable, tend towards stability after certain hour is aging.For the good device of consistance, the time occurred when device parameters tends towards stability is roughly the same, determines this time by DC Steady power aging, and this time is defined as time of device initial failure.For the device of same batch, adopt the method to carry out prescreen to device, if device still can not tend towards stability through initial failure after date parameter, then this device should rejected.
The earlier failure period of device is generally in 80-100 hour, the method is adopted to carry out the prescreen of GaN device, both achieved an ageing process of device thus device parameters is tended towards stability, also achieve the process that device to carry out screening within a short period of time simultaneously, avoid aging for a long time, save man power and material.
The principle that realizes of the present invention is, the life curve of device is a tub curve, the time period of losing efficacy in early days, device parameters is unstable, the crash rate of stage of stable development device is constant afterwards, and parameter also tends towards stability, and the earlier failure period of determining device will contribute to the early screening carrying out device.Device normally comprises the defect causing initial failure, these devices can be determined by a screening process usually, this process typically includes and applies the excitation of a period of time and the process of " pre-burning " to device, the region of to be a crash rate after this stage be substantially constant.Therefore a kind of method of effectively carrying out GaN device reliability sign is this method provided.A kind of simple and easy exercisable method is adopted to achieve prescreen to GaN device.
The measurement of Peak Junction Temperature is the prerequisite drafting highly reliable device screening stress, device screening has the device of hidden danger for the device or rejecting of rejecting initial failure, the achieved reliability feature of reflection device under certain power work, realizes the effective evaluation to device reliability.The test of GaN base HEMT device steady state operation life is mostly carry out under the condition of the gentle corresponding maximum rated power of certain shell.
By T
j=P R
th(j-c)+T
ccalculate, wherein Tj is the Peak Junction Temperature value of GaN device, and P is the size of the direct current dissipated power of device, R
th(j-c) for the junction temperature of device is to the thermal resistance size of environment temperature, Tc is the environment temperature of device.
Adopt infrared microscopy thermal imagery method to measure junction temperature, obtain the quantitative relationship of power-Peak Junction Temperature, determine the stress condition that highly reliable device stable state is aging.Under this condition, DC Steady power stress is applied at short notice to GaN base HEMT device, adopt the time dependent curve of the characterisitic parameter of computer software to device to carry out real-time collection simultaneously, and then the time that determining device characterisitic parameter tends towards stability is the time that device carries out prescreen, thus realize stablizing and reaching the object of prescreen the characterisitic parameter of device.
Realize principle based on above-mentioned, Fig. 1 shows the method flow diagram that the DC Steady power aging to GaN base device provided by the invention carries out prescreen, comprises the following steps:
Step 1: carry out packaging and testing to tested GaN base device, determines the DC Steady power of tested GaN base device;
Step 2: adopt thermal microscope to measure the junction temperature of tested GaN base device, and carry out mathematics and fit to measuring the junction temperature that obtains the relation between Peak Junction Temperature and DC Steady power obtaining tested GaN base device, determine tested GaN base device carry out DC Steady power aging condition and aging time residing environment temperature condition;
Step 3: carry out DC Steady power aging to tested GaN base device under this tested GaN base device carries out the condition of DC Steady power aging, obtains each characterisitic parameter of tested GaN base device curve over time;
Step 4: by each characterisitic parameter of this tested GaN base device threshold time that tends towards stability of each characterisitic parameter of curve determinator part over time;
Step 5: carry out burn-in screen to multiple tested GaN base device, rejects component characteristic parameter in this threshold time and is difficult to stable device, realize the prescreen of the DC Steady power aging to GaN base device.
Wherein, described packaging and testing are carried out to tested GaN base device, determine the DC Steady power of tested GaN base device, comprise: first tested GaN base device is fixed on fixture, this fixture have for suppressing and eliminating the self-oscillatory circuit of tested GaN base device, then direct supply is adopted tested GaN base device to be carried out to the measurement of DC characteristic, obtain the size that tested GaN base device leaks pressure and leakage current under different grid voltages, this leakage pressure is multiplied with leakage current and obtains the DC Steady power of tested GaN base device.Obtain now corresponding temperature conditions simultaneously.
Described employing thermal microscope measures the junction temperature of tested GaN base device, and carry out mathematics and fit to measuring the junction temperature that obtains the relation between Peak Junction Temperature and DC Steady power obtaining tested GaN base device, determine tested GaN base device carry out DC Steady power aging condition and aging time residing environment temperature condition, comprise: adopt thermal microscope to measure the junction temperature of tested GaN base device, obtain junction temperature distribution and the Peak Junction Temperature of tested GaN base device, then by Origin software to measuring the junction temperature distribution that obtains and Peak Junction Temperature is carried out mathematics and fitted, obtain between the Peak Junction Temperature of device and DC Steady power and relation curve residing for Peak Junction Temperature and device between environment temperature, and then determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve.
Described employing thermal microscope measures the junction temperature of tested GaN base device, obtains junction temperature distribution and the Peak Junction Temperature of tested GaN base device, comprising: the temperature of fixture controls at 70 DEG C by software by thermal microscope; Adopt the device of single tube encapsulation to be arranged on this fixture, this fixture realizes the self-oscillatory suppression of device, the DC Steady power of output device by suppressing oscillatory circuit; Thermal microscope is distributed by the radiant flux density of detection chip, is converted into the temperature value of surperficial each point by computer software, determines junction temperature distribution and the Peak Junction Temperature of tested GaN base device.
Describedly determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve, the temperature of residing environment temperature and substrate when determining that tested GaN base device carries out DC Steady power aging, drain terminal voltage and drain terminal electric current, wherein the temperature of substrate is determined by the method for infrared microscopy, and drain terminal voltage and drain terminal electric current obtain the measurement that tested GaN base device carries out DC characteristic by adopting direct supply.
Describedly determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve, comprising: leaks under different grid voltages presses and leakage current by measuring the tested GaN base device obtained, calculate the DC power of tested GaN base device; By the mathematical analysis software of Origin, obtain the mathematical relation curve of Peak Junction Temperature and corresponding DC Steady power; By measuring the result obtained at different substrate temperature, obtain the relation between the Peak Junction Temperature of device at varying environment temperature and DC Steady power.
Described tested GaN base device carries out the condition of DC Steady power aging, comprise: the junction temperature distribution adopting thermal microscope measuring element, its environment temperature controls at 70 DEG C, Tjm is reached and continuous working owing to making junction temperature, at the device of low-voltage low power consumption junction temperature distribution, when high voltage large power consumption, junction temperature distribution may become extremely uneven, there will be obvious hot spot, even cause component failure, and environment affects less on the junction temperature of device and thermal resistance, so when drafting screening conditions, carry out under the condition that should reduce dissipated power improving the environment temperature of device and reduce added device drain terminal voltage, so tested GaN base device is under the condition lower than 175 DEG C of junction temperatures, adopt environment temperature 70 DEG C, bias condition is drain voltage Vd=25V, leakage current Id=200mA.
Each characterisitic parameter of described tested GaN base device comprises: the size of the drain terminal electric current of device, threshold voltage, mutual conductance, Schottky cut-in voltage and reverse leakage current.Described by each characterisitic parameter of this tested GaN base device threshold time that tends towards stability of each characterisitic parameter of curve determinator part over time, be by each characterisitic parameter of this tested GaN base device over time curve determine the time that tested GaN base component characteristic parameter tends towards stability, and determine that this time of tending towards stability is that tested GaN base device parameters stablizes the threshold time entering the aging workspace of stable state.Described when carrying out burn-in screen to multiple tested GaN base device, the plurality of tested GaN base device is the GaN base device of same batch.
Embodiment
The method of the DC Steady power aging of GaN base device being carried out to prescreen that the present embodiment provides, it is measurement AlGaN/GaN HEMT being carried out to infrared microscopy, determining device DC Steady power aging condition, under this condition DC Steady power aging is carried out to device, by computer software to the characterisitic parameter of device over time situation carry out real-time collection, obtain each characterisitic parameter curve over time of device.The time that determining device characterisitic parameter tends towards stability is the threshold time that devices function enters stationary phase, in this time range, prescreen is carried out to device, weed out difficult parameters with stable device, device achieves the effect of steadiness parameter after overaging simultaneously, be carry out GaN base device DC Steady power aging and realize the effective and feasible method of prescreen, specifically comprise the steps:
1, packaging and testing are carried out to device.
The HEMT device of the single tube naked pipe AlGaN/GaN shown in Fig. 2 is adopted the encapsulation of SG62A, the device after encapsulation is arranged on special fixture, this fixture is designed with and suppresses oscillatory circuit with the self-sustained oscillation of abatement device, for the DC Steady power of output device.Adopt direct supply device to be carried out to the measurement of DC Steady power, fixing drain terminal voltage, changes the grid voltage of device, obtains corresponding leakage current, record the DC Steady watt level of device.DC Steady power be by power supply above the product of current/voltage obtain.
2, adopt the junction temperature of infrared microscopy measuring element, obtain junction temperature distribution and the Peak Junction Temperature of device, as shown in Figure 3, step is as follows:
(1) infrared microscopy tester controls the temperature of fixture at 70 DEG C by software;
(2) adopt the device of single tube encapsulation to be arranged on special fixture, this fixture achieves the self-oscillatory suppression of device, with the DC Steady power of output device by suppressing oscillatory circuit.
(3) thermal microscope is distributed by the radiant flux density of detection chip, is converted into the temperature value of surperficial each point by computer software, the peak temperature accurately in determining device.
3, as shown in Figure 4, carry out mathematics to the junction temperature of infrared microscopy measurement and fit, obtain the relation between the Peak Junction Temperature of device and DC Steady power and residing for device between environment temperature, determining device carries out the condition of DC Steady power aging:
(1) by measuring the DC characteristic obtained, the DC Steady watt level of device is calculated, wherein P=I
dsv
ds;
(2) Peak Junction Temperature that DC Steady power is corresponding is listed.Listed by Table I.
(3) by the mathematical analysis software of Origin, the mathematical relation curve of Peak Junction Temperature and corresponding DC Steady power is obtained.
(4) by measuring the result obtained at different substrate temperature, the relation between the Peak Junction Temperature of device at varying environment temperature and DC Steady power is obtained.
Table I device direct current dissipated power and Peak Junction Temperature measurement result
4, determine that GaN base HEMT device carries out the aging condition of Peak Junction Temperature steady state power.
The experiment of GaN base HEMT device steady state operation life is mostly carry out, by T under the condition of the gentle corresponding maximum rated power of certain shell
j=P R
th(j-c)+T
c(1)
From the angle of screening, there is no need to add rated power, can get rid of heat radiator, air-cooled and water-cooled completely, subtract power and carry out, as long as ensure Peak Junction Temperature, this is the cardinal rule of Peak Junction Temperature screening.Under not additional heat condition, under the condition of shell Wen Eding, here the shell temperature control of device is at 70 DEG C, certain DC Steady power is applied to GaN device, junction temperature is made to reach Tjm and continuous working, at the device of low-voltage low power consumption junction temperature distribution, when high voltage large power consumption, junction temperature distribution may become extremely uneven, there will be obvious hot spot, even cause component failure, and environment affects less on the junction temperature of device and thermal resistance, so when drafting aging condition, should reduce under dissipated power particularly reduces the condition of device drain terminal voltage improving the environment temperature of device and carry out.
Therefore, the experiment condition that GaN base device stable state is aging is:
By controlling the environment temperature around fixture, the shell temperature of control device, the temperature of the substrate residing for device is 70 DEG C;
Added drain terminal voltage is 25V, and drain terminal electric current is 200mA;
By control software design to characterisitic parameter Vd, Id, Vg and Ig of device with between change carry out real-time collection.
5, the threshold time that tends towards stability of determining device characterisitic parameter, after this threshold time, the characterisitic parameter of device tends towards stability, and thinks that device enters steady operation lifetime.By the time dependent curve of Vg and Ig of monitoring devices, characterisitic parameter tends towards stability time corresponding to place.Device 1#10 is after 390 hours aging, due to power failure experiment be forced in have no progeny, proceed experiment, find that the characterisitic parameter of 1#10 tends towards stability, it is below the result collected, illustrate that device tends to be steady at device property after the preaging of certain hour, enter the stationary phase in life-span, following result is verified the method.
6, for same batch, the good device of consistance, carries out steady state power to device aging in threshold timeframe, will in this threshold time, characterisitic parameter is difficult to stable device and is rejected, and the device parameters simultaneously after steady state power is aging obtains stable.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the DC Steady power aging of GaN base device is carried out to a method for prescreen, it is characterized in that, the method comprises:
Packaging and testing are carried out to tested GaN base device, determines the DC Steady power of tested GaN base device;
Thermal microscope is adopted to measure the junction temperature of tested GaN base device, and carry out mathematics and fit to measuring the junction temperature that obtains the relation between Peak Junction Temperature and DC Steady power obtaining tested GaN base device, determine tested GaN base device carry out DC Steady power aging condition and aging time residing environment temperature condition;
Under this tested GaN base device carries out the condition of DC Steady power aging, DC Steady power aging is carried out to tested GaN base device, obtain each characterisitic parameter of tested GaN base device curve over time;
By each characterisitic parameter of this tested GaN base device threshold time that tends towards stability of each characterisitic parameter of curve determinator part over time; And
Burn-in screen is carried out to multiple tested GaN base device, rejects component characteristic parameter in this threshold time and be difficult to stable device, realize the prescreen of the DC Steady power aging to GaN base device;
Wherein, described employing thermal microscope measures the junction temperature of tested GaN base device, and carry out mathematics and fit to measuring the junction temperature that obtains the relation between Peak Junction Temperature and DC Steady power obtaining tested GaN base device, determine tested GaN base device carry out DC Steady power aging condition and aging time residing environment temperature condition, comprise: adopt thermal microscope to measure the junction temperature of tested GaN base device, obtain junction temperature distribution and the Peak Junction Temperature of tested GaN base device, then by Origin software to measuring the junction temperature distribution that obtains and Peak Junction Temperature is carried out mathematics and fitted, obtain between the Peak Junction Temperature of device and DC Steady power and relation curve residing for Peak Junction Temperature and device between environment temperature, and then determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve.
2. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, describedly carries out packaging and testing to tested GaN base device, determines the DC Steady power of tested GaN base device, comprising:
First tested GaN base device is fixed on fixture, this fixture have for suppressing and eliminating the self-oscillatory circuit of tested GaN base device, then direct supply is adopted tested GaN base device to be carried out to the measurement of DC characteristic, obtain the size that tested GaN base device leaks pressure and leakage current under different grid voltages, this leakage pressure is multiplied with leakage current and obtains the DC Steady power of tested GaN base device.
3. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, described packaging and testing are carried out to tested GaN base device, determine the DC Steady power of tested GaN base device, also comprise: obtain now corresponding temperature conditions.
4. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, described employing thermal microscope measures the junction temperature of tested GaN base device, obtains junction temperature distribution and the Peak Junction Temperature of tested GaN base device, comprising:
The temperature of fixture controls at 70 DEG C by software by thermal microscope;
Adopt the device of single tube encapsulation to be arranged on this fixture, this fixture realizes the self-oscillatory suppression of device, the DC Steady power of output device by suppressing oscillatory circuit;
Thermal microscope is distributed by the radiant flux density of detection chip, is converted into the temperature value of surperficial each point by computer software, determines junction temperature distribution and the Peak Junction Temperature of tested GaN base device.
5. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, describedly determine that tested GaN base device carries out the condition of DC Steady power aging by this relation curve, the temperature of residing environment temperature and substrate when determining that tested GaN base device carries out DC Steady power aging, drain terminal voltage and drain terminal electric current, wherein the temperature of substrate is determined by the method for infrared microscopy, and drain terminal voltage and drain terminal electric current obtain the measurement that tested GaN base device carries out DC characteristic by adopting direct supply.
6. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, describedly determines that tested GaN base device carries out the condition of DC Steady power aging by this relation curve, comprising:
Under different grid voltages, leaking pressure and leakage current by measuring the tested GaN base device obtained, calculating the DC power of tested GaN base device;
By the mathematical analysis software of Origin, obtain the mathematical relation curve of Peak Junction Temperature and corresponding DC Steady power;
By measuring the result obtained at different substrate temperature, obtain the relation between the Peak Junction Temperature of device at varying environment temperature and DC Steady power.
7. the DC Steady power aging to GaN base device according to claim 6 carries out the method for prescreen, it is characterized in that, described tested GaN base device carries out the condition of DC Steady power aging, comprising:
Tested GaN base device is under the condition lower than 175 DEG C of junction temperatures, and adopt environment temperature 70 DEG C, bias condition is drain voltage Vd=25V, leakage current Id=200mA.
8. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, each characterisitic parameter of described tested GaN base device comprises: the size of the drain terminal electric current of device, threshold voltage, mutual conductance, Schottky cut-in voltage and reverse leakage current.
9. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, described by each characterisitic parameter of this tested GaN base device threshold time that tends towards stability of each characterisitic parameter of curve determinator part over time, be by each characterisitic parameter of this tested GaN base device over time curve determine the time that tested GaN base component characteristic parameter tends towards stability, and determine that this time of tending towards stability is that tested GaN base device parameters stablizes the threshold time entering the aging workspace of stable state.
10. the DC Steady power aging to GaN base device according to claim 1 carries out the method for prescreen, it is characterized in that, described when carrying out burn-in screen to multiple tested GaN base device, the plurality of tested GaN base device is the GaN base device of same batch.
Priority Applications (1)
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| CN105911446B (en) * | 2016-04-12 | 2018-09-04 | 重庆大学 | IGBT ageing states monitoring method and device |
| CN105865634A (en) * | 2016-05-25 | 2016-08-17 | 珠海格力电器股份有限公司 | Temperature detection device and method of power device as well as power device |
| CN106771953B (en) * | 2017-01-19 | 2019-10-18 | 深圳市量为科技有限公司 | The lossless screening technique of Schottky diode Radiation hardness and device |
| CN108333209B (en) * | 2018-02-28 | 2020-04-28 | 中国电子科技集团公司第十三研究所 | GaN HEMT accelerated life test method |
| CN111289799B (en) * | 2020-03-03 | 2021-01-08 | 电子科技大学 | GaN device dynamic on-resistance measuring circuit |
| CN111983411B (en) * | 2020-07-10 | 2022-12-27 | 中国电子科技集团公司第十三研究所 | Method and device for testing thermal resistance of multi-finger-gate transistor and terminal equipment |
| CN112964976B (en) * | 2021-05-19 | 2021-08-17 | 浙江杭可仪器有限公司 | Gallium nitride device ageing oven |
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