CN203326582U - High-power IGBT temperature acquisition protection circuit - Google Patents
High-power IGBT temperature acquisition protection circuit Download PDFInfo
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- CN203326582U CN203326582U CN2013204445823U CN201320444582U CN203326582U CN 203326582 U CN203326582 U CN 203326582U CN 2013204445823 U CN2013204445823 U CN 2013204445823U CN 201320444582 U CN201320444582 U CN 201320444582U CN 203326582 U CN203326582 U CN 203326582U
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Abstract
The utility model discloses a high-power IGBT temperature acquisition protection circuit which comprises an IGBT temperature acquisition circuit which is used for acquiring temperature of an IGBT element, and an IGBT double-and-single-way hysteresis temperature protection circuit which is used for receiving and processing signals outputted by the IGBT temperature acquisition circuit. The IGBT temperature acquisition circuit comprises a temperature acquisition element which is used for acquiring temperature of the IGBT element. The temperature acquisition element transmits the acquired temperature data to a filter circuit which is used for filtering and resisting interference. The filter circuit transmits the processed data to a differential negative feedback circuit to perform isolation output so that temperature voltage signals are outputted. The IGBT double-and-single-way hysteresis temperature protection circuit comprises a single-way hysteresis low temperature protection circuit and a high temperature single-way protection circuit which are interconnected in parallel. The single-way hysteresis low temperature protection circuit and the high temperature single-way protection circuit are used for respectively receiving and processing the temperature voltage signals outputted by the IGBT temperature acquisition circuit via respective operational amplifiers. According to the high-power IGBT temperature acquisition protection circuit, temperature of the IGBT is detected in real time and protection measures are adopted timely so that operation reliability of equipment is enhanced.
Description
Technical field
The utility model relates to power electronics protection field, relates in particular to a kind of high-power IGBT temperature acquisition protective circuit.
Background technology
Since first MOSFET and IGBT come out in the world, voltage-controlled type power electronic device particularly IGBT is just experiencing the process of a develop rapidly.The voltage of IGBT single module device is done higher and higher, and electric current is done larger and larger.Simultaneously, supporting driving element has also obtained greatly developing with it.Along with the device application field is more and more wider; the power-supply device transform power is increasing; for IGBT temperature acquisition and protection aspect, a lot of methods has been arranged; but while working due to the high pressure IGBT power high frequency; the di/dt produced; dv/dt easily produces and disturbs and damage Acquisition Circuit, therefore need to take the isolation method collecting temperature that antijamming capability is strong and can protect timely.
IGBT is as a kind of powerful multiple device, along with the IGBT the increase of output power, switching loss and conduction loss increase, make the junction temperature of IGBT raise, when the IGBT junction temperature is spent over 175, IGBT damages, and therefore needs reasonably to design heat radiation, when the IGBT electric current is excessive, radiating element can not shed heat in time, and IGBT will burn out.
A kind of IGBT module over-temperature protection circuit (patent No. 2010201111182.7); this module protection adds separately insulating power supply; make circuit complexity and reliability reduce; raise the cost; stagnant chain rate does not adopt single-phase stagnant ring protection circuit than circuit; because the temperature of resistance is floated reason, precision and the reliability of protection are undesirable.
The utility model content
The purpose of this utility model is exactly in order to address the above problem, and a kind of high-power IGBT temperature acquisition protective circuit is provided, and it has real-time detection IGBT temperature, and can take in time safeguard measure, can improve the advantage of the reliability of equipment work.
To achieve these goals, the utility model adopts following technical scheme:
A kind of high-power IGBT temperature acquisition protective circuit, comprise
For gathering the IGBT temperature collection circuit of IGBT component temperature; And
The two unidirectional stagnant ring temperature protection circuits of the IGBT that receives the signal of described IGBT temperature collection circuit output and processed;
Described IGBT temperature collection circuit comprises
For gathering the temperature acquisition element of IGBT component temperature, described temperature acquisition element is transferred to the temperature data collected for the jamproof filter circuit of filtering, described filter circuit is isolated output to the difference negative-feedback circuit, the output temperature voltage signal by the transfer of data after processing;
The two unidirectional stagnant ring temperature protection circuits of described IGBT comprise
The unidirectional stagnant ring low-temperature protection circuit be connected in parallel to each other and high temperature unidirectional protection circuit, the temperature voltage signal that described unidirectional stagnant ring low-temperature protection circuit and high temperature unidirectional protection circuit are exported from described IGBT temperature collection circuit by operational amplifier reception separately respectively also carries out conservation treatment.
Described temperature acquisition element is negative tempperature coefficient thermistor NTC1;
Described filter circuit comprises filter inductance L1, filter inductance L2, capacitor C 6, resistance R 13;
Described difference negative-feedback circuit comprises resistance R 15, resistance R 16, resistance R 18, resistance R 19 and TL084 operational amplifier U2A, the two ends of described negative tempperature coefficient thermistor NTC1 are connected respectively to the first end of filter inductance L1 and the first end of filter inductance L2, described capacitor C 6 is connected respectively to the second end of filter inductance L1 and the second end of filter inductance L2, the second end ground connection of described filter inductance L1, the second end of described filter inductance L2 is by connect-15V of resistance R 13 power supply, the second end of described filter inductance L1 also is connected to the in-phase input end of TL084 operational amplifier U2A by resistance R 18, the second end of described filter inductance L2 also is connected to the inverting input of TL084 operational amplifier U2A by resistance R 16, the in-phase input end of described TL084 operational amplifier U2A is also by resistance R 15 ground connection, the inverting input of described TL084 operational amplifier U2A connects the output of TL084 operational amplifier U2A by resistance R 19.
Described unidirectional stagnant ring low-temperature protection circuit comprises capacitor C 7, described capacitor C 7 is parallel to thermistor RT1 two ends, the first end ground connection of described thermistor RT1, the second end of described thermistor RT1 is by connect+15V of resistance R 20 power supply, the second end of described thermistor RT1 connects LM2904 operational amplifier U3A in-phase input end, the second end of described thermistor RT1 is connected to the first input end of bidirectional diode D4 by resistance R 24, described LM2904 operational amplifier U3A reverse inter-input-ing ending grounding, described LM2904 operational amplifier U3A output is connected on the output of bidirectional diode D4, the second input of described bidirectional diode D4 is connected with+15V power supply by pull-up resistor R22.
Described high temperature unidirectional protection circuit comprises resistance R 23, resistance R 25, thermistor RT2, the LM2904 operational amplifier, capacitor C 8 and bidirectional diode D5, the first input end of described bidirectional diode D5 is connected with+15V power supply by pull-up resistor R22, the second input of described bidirectional diode D5 is by resistance R 25 ground connection, the output of described bidirectional diode D5 is connected with the output of LM2904 operational amplifier U3B, the in-phase input end ground connection of described LM2904 operational amplifier U3B, the inverting input of described LM2904 operational amplifier U3B is by capacitor C 8 ground connection, described capacitor C 8 is in parallel with thermistor RT2, the in-phase input end of described LM2904 operational amplifier U3B is also by be connected to+15V of resistance R 23 power supply.
The temperature voltage signal of the output of the TL084 operational amplifier U2A of described difference negative-feedback circuit output is transferred to the in-phase input end of the LM2904 operational amplifier U3B of the LM2904 operational amplifier U3A inverting input of described unidirectional stagnant ring low-temperature protection circuit and described high temperature unidirectional protection circuit.
Described filter inductance L1, L2 are 100uH inductance sensibility reciprocal, and C6 is the 50V100nF capacitance, and the R13 resistance is 15 kilo-ohms, and R18, R16, R19, R15 resistance are 10 kilo-ohms.
The operational amplifier that described operational amplifier U3A, operational amplifier U3B are LM2904, bidirectional diode D4, bidirectional diode D5 are BAV70W, resistance R 20 resistances are 3.01 kilo-ohms, resistance R 24, resistance R 25 resistances are 30.1 kilo-ohms, resistance R 22, resistance R 23 resistances are 15 kilo-ohms, and capacitor C 7, capacitor C 8 are the 50V100nF capacitor's capacity.
Negative tempperature coefficient thermistor, have different resistances in different temperature, and when low temperature, resistance is high, and during high temperature, resistance is low, and the magnitude of voltage that negative tempperature coefficient thermistor NTC1 and resistance R 13 dividing potential drops obtain is sent into difference channel and isolated output.
The beneficial effects of the utility model:
1 detects the IGBT temperature in real time, and can take in time safeguard measure, can improve the reliability of equipment work.
2 do not need to provide separately power supply just can realize isolation and anti-interference, adopt two unidirectional stagnant ring protections can improve precision and the reliability of protection, realize IGBT is protected reliably.
The accompanying drawing explanation
Fig. 1 is a kind of IGBT temperature acquisition schematic diagram;
Fig. 2 is the two unidirectional stagnant ring temperature protection schematic diagrams of a kind of IGBT;
Wherein, NTC1 is negative tempperature coefficient thermistor, L1, L2 are filter inductance, C6 is electric capacity, and R13, R16, R18, R15, R19 are resistance, and U2A, U3A, U3B are operational amplifier, RT1, RT2 are thermistor, R20, R22, R23, R24, R25 are resistance, and D4, D5 are bidirectional diode, and C7, C8 are electric capacity.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail.
The utility model is a kind of method of high-power IGBT temperature acquisition protection, for preventing IGBT junction temperature too high damage IGBT and temperature acquisition, is disturbed, by the temperature protecting method of difference collection and two unidirectional stagnant rings.
As shown in Figure 1, a kind of high-power IGBT temperature acquisition protective circuit, comprise
For gathering the IGBT temperature collection circuit of IGBT component temperature; And
The two unidirectional stagnant ring temperature protection circuits of the IGBT that receives the signal of described IGBT temperature collection circuit output and processed;
Described IGBT temperature collection circuit comprises
For gathering the temperature acquisition element of IGBT component temperature, described temperature acquisition element is transferred to the temperature data collected for the jamproof filter circuit of filtering, described filter circuit is isolated output to the difference negative-feedback circuit, the output temperature voltage signal by the transfer of data after processing;
The two unidirectional stagnant ring temperature protection circuits of described IGBT comprise
The unidirectional stagnant ring low-temperature protection circuit be connected in parallel to each other and high temperature unidirectional protection circuit, the temperature voltage signal that described unidirectional stagnant ring low-temperature protection circuit and high temperature unidirectional protection circuit are exported from described IGBT temperature collection circuit by operational amplifier reception separately respectively also carries out conservation treatment.
Described temperature acquisition element is negative tempperature coefficient thermistor NTC1;
Described filter circuit comprises filter inductance L1, filter inductance L2, capacitor C 6, resistance R 13;
Described difference negative-feedback circuit comprises resistance R 15, resistance R 16, resistance R 18, resistance R 19 and TL084 operational amplifier U2A, the two ends of described negative tempperature coefficient thermistor NTC1 are connected respectively to the first end of filter inductance L1 and the first end of filter inductance L2, described capacitor C 6 is connected respectively to the second end of filter inductance L1 and the second end of filter inductance L2, the second end ground connection of described filter inductance L1, the second end of described filter inductance L2 is by connect-15V of resistance R 13 power supply, the second end of described filter inductance L1 also is connected to the in-phase input end of TL084 operational amplifier U2A by resistance R 18, the second end of described filter inductance L2 also is connected to the inverting input of TL084 operational amplifier U2A by resistance R 16, the in-phase input end of described TL084 operational amplifier U2A is also by resistance R 15 ground connection, the inverting input of described TL084 operational amplifier U2A connects the output of TL084 operational amplifier U2A by resistance R 19.
A kind of IGBT temperature acquisition schematic diagram, IGBT temperature acquisition part is by negative tempperature coefficient thermistor NTC1, filter inductance L1, filter inductance L2, capacitor C 6, resistance R 13, resistance R 16, resistance R 18, resistance R 15, resistance R 19, operational amplifier U2A forms, L1, L2 is filter inductance, U2A is operational amplifier TL084, NTC1 is negative tempperature coefficient thermistor, in different temperature, different resistances is arranged, when low temperature, resistance is high, during high temperature, resistance is low, the magnitude of voltage that negative tempperature coefficient thermistor NTC1 and resistance R 13 dividing potential drops obtain is sent into difference channel and is isolated output.
When negative tempperature coefficient thermistor NTC1 change in resistance, when negative tempperature coefficient thermistor NTC1 resistance is low, temperature is high, when resistance is large, temperature is low, the resistance of negative tempperature coefficient thermistor NTC1 and resistance R 13 form dividing potential drop, negative tempperature coefficient thermistor NTC1 current signal is become to negative voltage signal, and this voltage signal is through resistance R 16, resistance R 18, the difference negative-feedback circuit that operational amplifier U2A forms, operational amplifier U2A the first pin is exported positive temperature voltage signal TA.
As shown in Figure 2, described unidirectional stagnant ring low-temperature protection circuit comprises capacitor C 7, described capacitor C 7 is parallel to thermistor RT1 two ends, the first end ground connection of described thermistor RT1, the second end of described thermistor RT1 is by connect+15V of resistance R 20 power supply, the second end of described thermistor RT1 connects LM2904 operational amplifier U3A in-phase input end, the second end of described thermistor RT1 is connected to the first input end of bidirectional diode D4 by resistance R 24, described LM2904 operational amplifier U3A reverse inter-input-ing ending grounding, described LM2904 operational amplifier U3A output is connected on the output of bidirectional diode D4, the second input of described bidirectional diode D4 is connected with+15V power supply by pull-up resistor R22.
Described high temperature unidirectional protection circuit comprises resistance R 23, resistance R 25, thermistor RT2, the LM2904 operational amplifier, capacitor C 8 and bidirectional diode D5, the first input end of described bidirectional diode D5 is connected with+15V power supply by pull-up resistor R22, the second input of described bidirectional diode D5 is by resistance R 25 ground connection, the output of described bidirectional diode D5 is connected with the output of LM2904 operational amplifier U3B, the in-phase input end ground connection of described LM2904 operational amplifier U3B, the inverting input of described LM2904 operational amplifier U3B is by capacitor C 8 ground connection, described capacitor C 8 is in parallel with thermistor RT2, the in-phase input end of described LM2904 operational amplifier U3B is also by be connected to+15V of resistance R 23 power supply.
The temperature voltage signal of the output of the TL084 operational amplifier U2A of described difference negative-feedback circuit output is transferred to the in-phase input end of the LM2904 operational amplifier U3B of the LM2904 operational amplifier U3A inverting input of described unidirectional stagnant ring low-temperature protection circuit and described high temperature unidirectional protection circuit.
Described filter inductance L1, filter inductance L2 are 100uH inductance sensibility reciprocal, and capacitor C 6 is the 50V100nF capacitance, and resistance R 13 resistances are 15 kilo-ohms, and resistance R 18, resistance R 16, resistance R 19, resistance R 15 resistances are 10 kilo-ohms.
The operational amplifier that described operational amplifier U3A, operational amplifier U3B are LM2904, bidirectional diode D4, bidirectional diode D5 are BAV70W, resistance R 20 resistances are 3.01 kilo-ohms, resistance R 24, resistance R 25 resistances are 30.1 kilo-ohms, resistance R 22, resistance R 23 resistances are 15 kilo-ohms, and capacitor C 7, capacitor C 8 are the 50V100nF capacitor's capacity.
As shown in Figure 2; the two unidirectional stagnant ring temperature protection parts of IGBT by; operational amplifier U3A, thermistor RT1, resistance R 20, resistance R 24, bidirectional diode D4 form unidirectional stagnant ring low-temperature protection part; operational amplifier U3A, operational amplifier U3B are comparator; thermistor RT1 is for setting the low-temperature protection resistance; operational amplifier U3B, bidirectional diode D5, resistance R 25, resistance R 23, thermistor RT2 form high temperature unidirectional protection part, wherein protect low level by drawing on resistance R 22.
The two unidirectional stagnant ring temperature protection schematic diagrams of a kind of IGBT, during low temperature, negative tempperature coefficient thermistor NTC1 resistance is large, after the temperature T a-signal arrives the 2nd pin of operational amplifier U3A, and the 5th pin of operational amplifier U3B, the 3rd pin of TA and operational amplifier U3A relatively, TA and operational amplifier U3B the 6th pin are relatively, the magnitude of voltage of operational amplifier U3A the 3rd pin is to obtain the low-temperature protection reference value by resistance R 20 and thermistor RT1 dividing potential drop, the magnitude of voltage of the 6th pin of operational amplifier U3B is, resistance R 23 obtains with thermistor RT2 dividing potential drop, after TA voltage is greater than operational amplifier U3A the 3rd pin, when TA is greater than operational amplifier U3B the 6th pin, operational amplifier U3A the 1st pin is low level, operational amplifier U3B the 7th pin is high level, due to bidirectional diode, D5 is reverse, therefore operational amplifier U3A output low level is by drawing rear output temperature guard signal on resistance R 22, during high temperature, negative tempperature coefficient thermistor NTC resistance is little, after the temperature T a-signal arrives the 2nd pin of operational amplifier U3A, the temperature that is also TA is reduced to minimum point, and the 5th pin of TA and operational amplifier U3B, the 3rd pin of TA and operational amplifier U3A relatively, TA and operational amplifier U3B the 6th pin are relatively, the magnitude of voltage of operational amplifier U3A the 3rd pin is to obtain the low-temperature protection reference value by resistance R 20 and thermistor RT1 dividing potential drop, the magnitude of voltage of the 6th pin of operational amplifier U3B is, the high temperature protection value that operational amplifier R23 and thermistor RT2 dividing potential drop obtain, operational amplifier U3A, thermistor RT1, resistance R 20, resistance R 24, bidirectional diode D4 forms unidirectional stagnant ring low-temperature protection, after temperature arrives setting minimum temperature point, both protected, when rising, temperature can not protect immediately, a hysteresis time is arranged.By after TA voltage less-than operation amplifier U3A the 3rd pin; that is to say that the IGBT temperature raises; during TA less-than operation amplifier U3B the 6th pin, operational amplifier U3A the first pin is high level, and operational amplifier U3B the 7th pin is low level; due to bidirectional diode, D4 is reverse; therefore operational amplifier U3B output low level is by drawing rear output temperature guard signal, resistance R 24, bidirectional diode D4 on resistance R 22; resistance R 25, bidirectional diode D5 forms unidirectional stagnant loop circuit.Can realize protecting immediately after temperature reaches the highest protection value of IGBT, but when temperature reduces, the hysteresis interval be arranged.
Although above-mentioned, by reference to the accompanying drawings embodiment of the present utility model is described; but be not the restriction to the utility model protection range; one of ordinary skill in the art should be understood that; on the basis of the technical solution of the utility model, those skilled in the art do not need to pay various modifications that creative work can make or distortion still in protection range of the present utility model.
Claims (7)
1. a high-power IGBT temperature acquisition protective circuit, is characterized in that, comprises
For gathering the IGBT temperature collection circuit of IGBT component temperature; And
The two unidirectional stagnant ring temperature protection circuits of the IGBT that receives the signal of described IGBT temperature collection circuit output and processed;
Described IGBT temperature collection circuit comprises
For gathering the temperature acquisition element of IGBT component temperature, described temperature acquisition element is transferred to the temperature data collected for the jamproof filter circuit of filtering, described filter circuit is isolated output to the difference negative-feedback circuit, the output temperature voltage signal by the transfer of data after processing;
The two unidirectional stagnant ring temperature protection circuits of described IGBT comprise
The unidirectional stagnant ring low-temperature protection circuit be connected in parallel to each other and high temperature unidirectional protection circuit, the temperature voltage signal that described unidirectional stagnant ring low-temperature protection circuit and high temperature unidirectional protection circuit are exported from described IGBT temperature collection circuit by operational amplifier reception separately respectively also carries out conservation treatment.
2. a kind of high-power IGBT temperature acquisition protective circuit as claimed in claim 1, is characterized in that,
Described temperature acquisition element is negative tempperature coefficient thermistor NTC1;
Described filter circuit comprises filter inductance L1, filter inductance L2, capacitor C 6, resistance R 13;
Described difference negative-feedback circuit comprises resistance R 15, resistance R 16, resistance R 18, resistance R 19 and TL084 operational amplifier U2A, the two ends of described negative tempperature coefficient thermistor NTC1 are connected respectively to the first end of filter inductance L1 and the first end of filter inductance L2, described capacitor C 6 is connected respectively to the second end of filter inductance L1 and the second end of filter inductance L2, the second end ground connection of described filter inductance L1, the second end of described filter inductance L2 is by connect-15V of resistance R 13 power supply, the second end of described filter inductance L1 also is connected to the in-phase input end of TL084 operational amplifier U2A by resistance R 18, the second end of described filter inductance L2 also is connected to the inverting input of TL084 operational amplifier U2A by resistance R 16, the in-phase input end of described TL084 operational amplifier U2A is also by resistance R 15 ground connection, the inverting input of described TL084 operational amplifier U2A connects the output of TL084 operational amplifier U2A by resistance R 19.
3. a kind of high-power IGBT temperature acquisition protective circuit as claimed in claim 1, it is characterized in that, described unidirectional stagnant ring low-temperature protection circuit comprises capacitor C 7, described capacitor C 7 is parallel to thermistor RT1 two ends, the first end ground connection of described thermistor RT1, the second end of described thermistor RT1 is by connect+15V of resistance R 20 power supply, the second end of described thermistor RT1 connects LM2904 operational amplifier U3A in-phase input end, the second end of described thermistor RT1 is connected to the first input end of bidirectional diode D4 by resistance R 24, described LM2904 operational amplifier U3A reverse inter-input-ing ending grounding, described LM2904 operational amplifier U3A output is connected on the output of bidirectional diode D4, the second input of described bidirectional diode D4 is connected with+15V power supply by pull-up resistor R22.
4. a kind of high-power IGBT temperature acquisition protective circuit as claimed in claim 1, it is characterized in that, described high temperature unidirectional protection circuit comprises resistance R 23, resistance R 25, thermistor RT2, the LM2904 operational amplifier, capacitor C 8 and bidirectional diode D5, the first input end of described bidirectional diode D5 is connected with+15V power supply by pull-up resistor R22, the second input of described bidirectional diode D5 is by resistance R 25 ground connection, the output of described bidirectional diode D5 is connected with the output of LM2904 operational amplifier U3B, the in-phase input end ground connection of described LM2904 operational amplifier U3B, the inverting input of described LM2904 operational amplifier U3B is by capacitor C 8 ground connection, described capacitor C 8 is in parallel with thermistor RT2, the in-phase input end of described LM2904 operational amplifier U3B is also by be connected to+15V of resistance R 23 power supply.
5. a kind of high-power IGBT temperature acquisition protective circuit as claimed in claim 1; it is characterized in that, the temperature voltage signal of the output of the TL084 operational amplifier U2A of described difference negative-feedback circuit output is transferred to the in-phase input end of the LM2904 operational amplifier U3B of the LM2904 operational amplifier U3A inverting input of described unidirectional stagnant ring low-temperature protection circuit and described high temperature unidirectional protection circuit.
6. a kind of high-power IGBT temperature acquisition protective circuit as claimed in claim 1; it is characterized in that; described filter inductance L1, filter inductance L2 are 100uH inductance sensibility reciprocal; capacitor C 6 is the 50V100nF capacitance; resistance R 13 resistances are 15 kilo-ohms, and resistance R 18, resistance R 16, resistance R 19, resistance R 15 resistances are 10 kilo-ohms.
7. a kind of high-power IGBT temperature acquisition protective circuit as claimed in claim 1; it is characterized in that; the operational amplifier that described operational amplifier U3A, operational amplifier U3B are LM2904; bidirectional diode D4, bidirectional diode D5 are BAV70W; resistance R 20 resistances are 3.01 kilo-ohms; resistance R 24, resistance R 25 resistances are 30.1 kilo-ohms, and resistance R 22, resistance R 23 resistances are 15 kilo-ohms, and capacitor C 7, capacitor C 8 are the 50V100nF capacitor's capacity.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013204445823U CN203326582U (en) | 2013-07-24 | 2013-07-24 | High-power IGBT temperature acquisition protection circuit |
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| CN2013204445823U CN203326582U (en) | 2013-07-24 | 2013-07-24 | High-power IGBT temperature acquisition protection circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337836A (en) * | 2013-07-24 | 2013-10-02 | 国家电网公司 | High-power IGBT (Insulated Gate Bipolar Transistor) temperature acquisition protection circuit |
| CN104569774A (en) * | 2014-05-08 | 2015-04-29 | 江苏中科君芯科技有限公司 | System and method detecting reliability of IGBT power device |
| CN108112278A (en) * | 2015-07-02 | 2018-06-01 | 洛达姆电子公司 | Safety circuit, safe circuit operation method and the electro-motor including safety circuit |
| CN115954835A (en) * | 2022-12-28 | 2023-04-11 | 广州通则康威智能科技有限公司 | Battery protection circuit based on temperature detection |
-
2013
- 2013-07-24 CN CN2013204445823U patent/CN203326582U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337836A (en) * | 2013-07-24 | 2013-10-02 | 国家电网公司 | High-power IGBT (Insulated Gate Bipolar Transistor) temperature acquisition protection circuit |
| CN104569774A (en) * | 2014-05-08 | 2015-04-29 | 江苏中科君芯科技有限公司 | System and method detecting reliability of IGBT power device |
| CN108112278A (en) * | 2015-07-02 | 2018-06-01 | 洛达姆电子公司 | Safety circuit, safe circuit operation method and the electro-motor including safety circuit |
| US10746610B2 (en) | 2015-07-02 | 2020-08-18 | Bitzer Electronics A/S | Safety circuit, a safety circuit operation method and an electrically operated motor comprising a safety circuit |
| CN108112278B (en) * | 2015-07-02 | 2020-10-20 | 比泽尔电子公司 | Safety circuit, safety circuit operating method and electric motor comprising a safety circuit |
| CN115954835A (en) * | 2022-12-28 | 2023-04-11 | 广州通则康威智能科技有限公司 | Battery protection circuit based on temperature detection |
| CN115954835B (en) * | 2022-12-28 | 2024-03-12 | 广州通则康威科技股份有限公司 | Battery protection circuit based on temperature detection |
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