CN105628237A - IGBT module temperature detection method - Google Patents
IGBT module temperature detection method Download PDFInfo
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- CN105628237A CN105628237A CN201610019892.9A CN201610019892A CN105628237A CN 105628237 A CN105628237 A CN 105628237A CN 201610019892 A CN201610019892 A CN 201610019892A CN 105628237 A CN105628237 A CN 105628237A
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- temperature
- igbt module
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
- G01K7/021—Particular circuit arrangements
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Abstract
The invention relates to the temperature detection technology and particularly relates to a IGBT module temperature detection method. The IGBT module temperature detection method comprises: a thermal electric converting device performs collection on the heat radiation temperature of an IGBT module and converting temperature on the heat radiation panel to an electric signal; a conditioning circuit receives electric signals outputted by the thermal electric converting device and performs corresponding temperature compensation, compares the electric signals with a set threshold after conversion and processing, and performs the isolation conversion on the result to produce a digital quantity signal which can be supplied to an MCU for collection and processing; the MCU collects the digital quantity signal outputted by the conditioning circuit, performs processing and logical judgment on the digital quantity signal, controls the working state of the power assembly and outputs the alarm control signal. The invention performs safe and reliable monitoring on the temperature of the IGBT module, and improves the working efficiency of the IGBT module according to the different temperature conditions.
Description
Technical field
The present invention relates to temperature detection technology, particularly relate to the temperature checking method of a kind of IGBT application.
Background technology
At present, IGBT is little with its volume, easily carries out block combiner, and the advantages such as serviceability is good, easy maintenance are widely used in power electronic product. But, due to the inherent character of IGBT, the performance of its task performance must be complied with its temperature characterisitic, if when module temperature is higher, the task performance still maintaining power bigger then can cause module unrepairable to damage, and jeopardizes equipment safety. Therefore, the temperature of IGBT module is carried out detection to be very important.
By analysis, traditional IGBT module temperature checking method is based on the NTC device that inside modules is integrated, and control unit detects the change of its resistance by analog quantity channel and finds out the situation of change of module temperature. in order to reduce the thermal resistance between igbt chip and temperature element, NTC is typically integrated in inside IGBT module, in position very close to the power cell of inside modules, IGBT module needs with its operation principle, it is generally operational in high voltage, the state of big electric current, when IGBT module bursts because of fault, power cell then overlaps with NTC most probably, on power cell, high voltage and big electric current then can move back to control unit by the detection method of NTC, control unit is caused to damage, even with control unit string to other equipment being connected with control unit, cause system-wide damage, the person and equipment safety is jeopardized time serious, so far but without the mode that the temperature of IGBT module is carried out safety and precise detection.
Summary of the invention
The present invention provides a kind of IGBT module temperature checking method, purpose is contemplated to the shortcoming overcoming the existing temperature to IGBT module to carry out safety monitoring, by the temperature of IGBT module being carried out safe and reliable monitoring, and take appropriate measures according to different temperatures situation and improve the task performance of IGBT module.
For achieving the above object, technical scheme is as follows:
A kind of IGBT module temperature checking method, it is characterised in that described detection method step includes:
The heat sink temperature of IGBT module is acquired by A, thermo-electrically switching device, and is the signal of telecommunication by the temperature transition on heat sink;
B, modulate circuit receive the signal of telecommunication of thermo-electrically switching device output, carry out corresponding temperature-compensating, after conversion and process with setting threshold ratio relatively, and convert result isolation to be available for MCU acquisition process digital quantity signal;
The digital quantity signal of C, MCU acquisition and conditioning circuit output, processes digital quantity signal and logical judgment, and controls the duty of (PCC) power, exports alarm control signal.
Further, described thermo-electrically switching device includes thermo-electrically converting unit and attached configuration device, thermo-electrically converting unit and heat sink laminating, and according to temperature-signal of telecommunication amplitude corresponding relation, the temperature on heat sink is transformed to the signal of telecommunication.
Further, described thermo-electrically switching device is voltage-type, current mode or resistor-type.
Further, described modulate circuit includes translation circuit, threshold set circuit, comparison circuit and isolation circuit; The translation circuit that is connected with thermo-electrically switching device is for being converted into voltage signal by the signal of telecommunication that thermo-electrically switching device exports, and carries out corresponding convergent-divergent and biasing, and comparison circuit is arrived in output; Application is needed corresponding temperature to be converted into voltage signal according to the transformation relation of thermo-electrically switching device by threshold set circuit, and comparison circuit is arrived in output; The voltage signal of translation circuit and threshold set circuit is compared by comparison circuit, and exports to isolation circuit by the result whether exceeding threshold value set point with digital quantity form; The isolation circuit digital quantity signal to input from comparison circuit carries out electrical isolation, and be transformed to MCU can the signal level of acquisition process, output is to MCU.
Further, state or combination that the duty of described (PCC) power is exported by MCU determine: when MCU is output as state 1, (PCC) power in running order 1; When MCU is output as state 2, (PCC) power in running order 2; ...; The definition of output state and the corresponding relation with (PCC) power duty are determined by user.
Further, described detection system also includes IGBT shell and cooling system, described cooling system and the laminating of IGBT shell, for taking away the heat that IGBT module sends.
First the temperature of IGBT module heat sink is acquired by described IGBT module temperature checking method, as required temperature signal is carried out conversion process and compares with the threshold voltage after temperature adjustmemt, comparative result, through MCU logical judgment, exports corresponding control signal.
Described collection is acquired by thermo-electrically switching device, temperature on heat sink is converted into voltage, electric current or resistance signal according to transformation relation by thermo-electrically switching device, and this temperature-signal of telecommunication amplitude transformation closes to tie up to specific descriptions on the product description of switching device.
Described conversion process that the signal of telecommunication is carried out refers to that translation circuit converts electrical signals to voltage signal U0 and zooms to the voltage signal U of convenient process; Pass through the transformation relation of thermo-electrically switching device according to application demand, temperature threshold T1, T2 ... that application is needed by threshold set circuit are converted into voltage threshold U1, U2 ...; Voltage signal U and voltage threshold U1, U2 ... are compared by comparison circuit, and are exported with the form of digital quantity 0 and 1 by comparative result.
Described temperature adjustmemt mode is demarcated by single test after heat sink has designed, namely the thermo-electrically switching device collecting temperature on the NTC being simultaneously internally integrated by IGBT module and heat sink, both temperature difference T of record, then, when design temperature threshold value, take temperature thresholdFor heat sink temperatureWith the temperature differenceSum, namely��
Described logical judgment process is, the first step, the output state of acquisition and conditioning circuit; Second step, the state preset in the output state of modulate circuit or combination comparison program; 3rd step, output comparison judged result; 4th step, takes appropriate measures according to judged result.
The present invention compared with prior art provides the benefit that:
In safety, the detection unit near IGBT module have employed electrical isolation in the process gathered, and is effectively increased the safety coefficient of detection unit;
The carrier gathering signal transmission selects digital quantity signal, is effectively increased the signal quality under the strong electromagnetic interference environment caused by IGBT power conversion, improves capacity of resisting disturbance;
Have employed simple circuit form and a small amount of electronic device, simple in construction, reliability is high;
Adopt more rich digital quantity input block on MCU to be acquired, saved analog input unit more in short supply on MCU, improve MCU Resources on Chip utilization rate;
Circuit can carry out isomorphism extension according to different application demand, and practicality is high.
Accompanying drawing explanation
The detection method schematic diagram of Fig. 1 present invention.
Fig. 2 is the logical judgment flow chart of the present invention.
Detailed description of the invention
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
As it is shown in figure 1, the corresponding relation that IGBT module water-cooling heat radiating system uses current mode thermo-electrically switching device, its current signal and temperature is linear transformation relation, namely temperature often raises 1K, and electric current increases 1uA, temperature often reduces 1K, electric current reduces 1uA, therefore, thermo-electrically switching device is output as I=(T+273) uA, wherein T is Celsius temperature, the output electric current of thermo-electrically switching device flows through the resistance R1 in translation circuit, choose R1=5K ��, then voltage U=(5T+1365) mV at resistance R1 two ends, first measurement show that the temperature difference is 30 DEG C, threshold set circuit sets measuring point temperature corresponding for threshold value U1=1565mV(as 40 DEG C, module temperature is 70 DEG C), temperature corresponding for U2=1690mV(is 65 DEG C, module temperature is 95 DEG C), temperature corresponding for U3=1740mV(is 75 DEG C, module temperature is 105 DEG C), as shown in the figure, by U and U1 in comparison circuit, U2, U3 compares, the corresponding result of each threshold value, it is output as 1 more than threshold value, it is output as 0 less than threshold value, then:
As U��U1, namely during temperature T��40 DEG C, U and U1, U2, U3 comparative result are 000;
As U1 < U��U2, namely during 40 DEG C of < T��65 DEG C of temperature, U and U1, U2, U3 comparative result are 100;
As U2 < U��U3, namely during 65 DEG C of < T��75 DEG C of temperature, U and U1, U2, U3 comparative result are 110;
As U > U3, namely during temperature T > 75 DEG C, U and U1, U2, U3 comparative result are 111.
Adopting optocoupler ACPL054L, in the way of electrical isolation, the comparative result of comparison circuit is transferred to MCU in isolation circuit, isolation voltage is 5kV.
As in figure 2 it is shown, MCU judges according to the output state of modulate circuit:
When exporting result and being 000, it was shown that IGBT module temperature is in relatively low state, and MCU controls (PCC) power normal operation.
When exporting result and being 100, it was shown that IGBT module needs to distribute heat to keep temperature, MCU controls (PCC) power restriction power output.
When exporting result and being 110, it was shown that IGBT module temperature is in higher state, MCU controls (PCC) power restriction power output, and sends excess temperature alarm signal.
When exporting result and being 111, it was shown that IGBT module is in superheat state, and MCU controls (PCC) power equipment downtime.
Description for the understanding of detailed description of the invention is only understand the present invention for help, rather than is used for limiting the present invention's. Those skilled in the art all can utilize the thought of the present invention to carry out some and change and change, as long as its technological means is without departing from the thought of the present invention and main points, remain within protection scope of the present invention.
Claims (6)
1. an IGBT module temperature checking method, it is characterised in that described detection method step includes:
The heat sink temperature of IGBT module is acquired by A, thermo-electrically switching device, and is the signal of telecommunication by the temperature transition on heat sink;
B, modulate circuit receive the signal of telecommunication of thermo-electrically switching device output, carry out corresponding temperature-compensating, after conversion and process with setting threshold ratio relatively, and convert result isolation to be available for MCU acquisition process digital quantity signal;
The digital quantity signal of C, MCU acquisition and conditioning circuit output, processes digital quantity signal and logical judgment, and controls the duty of (PCC) power, exports alarm control signal.
2. a kind of IGBT module temperature checking method according to claim 1, it is characterized in that described thermo-electrically switching device includes thermo-electrically converting unit and attached configuration device, thermo-electrically converting unit and heat sink laminating, be transformed to the signal of telecommunication by the temperature on heat sink according to temperature-signal of telecommunication amplitude corresponding relation.
3. according to the arbitrary described a kind of IGBT module temperature checking method of claim 1 or 2, it is characterised in that described thermo-electrically switching device is voltage-type, current mode or resistor-type.
4. a kind of IGBT module temperature checking method according to claim 1, it is characterised in that described modulate circuit includes translation circuit, threshold set circuit, comparison circuit and isolation circuit; The translation circuit that is connected with thermo-electrically switching device is for being converted into voltage signal by the signal of telecommunication that thermo-electrically switching device exports, and carries out corresponding convergent-divergent and biasing, and comparison circuit is arrived in output; Application is needed corresponding temperature to be converted into voltage signal according to the transformation relation of thermo-electrically switching device by threshold set circuit, and comparison circuit is arrived in output; The voltage signal of translation circuit and threshold set circuit is compared by comparison circuit, and exports to isolation circuit by the result whether exceeding threshold value set point with digital quantity form; The isolation circuit digital quantity signal to input from comparison circuit carries out electrical isolation, and be transformed to MCU can the signal level of acquisition process, output is to MCU.
5. a kind of IGBT module temperature checking method according to claim 1, it is characterised in that state or combination that the duty of described (PCC) power is exported by MCU determine: when MCU is output as state 1, (PCC) power in running order 1; When MCU is output as state 2, (PCC) power in running order 2; ...; The definition of output state and the corresponding relation with (PCC) power duty are determined by user.
6. a kind of IGBT module temperature checking method according to claim 1, it is characterised in that also include IGBT shell and cooling system, described cooling system and the laminating of IGBT shell, for taking away the heat that IGBT module sends.
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| CN201610019892.9A CN105628237A (en) | 2016-01-13 | 2016-01-13 | IGBT module temperature detection method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107402078A (en) * | 2017-08-04 | 2017-11-28 | 昆山帝森克罗德光电技术有限公司 | A kind of three road temperature collection circuits for SVG products |
| CN109186795A (en) * | 2018-09-07 | 2019-01-11 | 江苏中科君芯科技有限公司 | The evaluation method of IGBT module shell temperature |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060164111A1 (en) * | 2004-02-27 | 2006-07-27 | Wells-Cti, Llc, An Oregon Limited Liability Company | Temperature sensing and prediction in IC sockets |
| CN102253320A (en) * | 2011-04-19 | 2011-11-23 | 南车株洲电力机车研究所有限公司 | Method for pre-warning failure of insulated gate bipolar transistor (IGBT) |
| CN102636291A (en) * | 2011-02-15 | 2012-08-15 | 三一电气有限责任公司 | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof |
| WO2014091852A1 (en) * | 2012-12-12 | 2014-06-19 | 富士電機株式会社 | Semiconductor chip temperature estimation device and overheat protection device |
| CN104458039A (en) * | 2013-09-25 | 2015-03-25 | 上海英威腾工业技术有限公司 | IGBT module shell temperature real-time estimation method |
-
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- 2016-01-13 CN CN201610019892.9A patent/CN105628237A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060164111A1 (en) * | 2004-02-27 | 2006-07-27 | Wells-Cti, Llc, An Oregon Limited Liability Company | Temperature sensing and prediction in IC sockets |
| CN102636291A (en) * | 2011-02-15 | 2012-08-15 | 三一电气有限责任公司 | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof |
| CN102253320A (en) * | 2011-04-19 | 2011-11-23 | 南车株洲电力机车研究所有限公司 | Method for pre-warning failure of insulated gate bipolar transistor (IGBT) |
| WO2014091852A1 (en) * | 2012-12-12 | 2014-06-19 | 富士電機株式会社 | Semiconductor chip temperature estimation device and overheat protection device |
| CN104458039A (en) * | 2013-09-25 | 2015-03-25 | 上海英威腾工业技术有限公司 | IGBT module shell temperature real-time estimation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107402078A (en) * | 2017-08-04 | 2017-11-28 | 昆山帝森克罗德光电技术有限公司 | A kind of three road temperature collection circuits for SVG products |
| CN109186795A (en) * | 2018-09-07 | 2019-01-11 | 江苏中科君芯科技有限公司 | The evaluation method of IGBT module shell temperature |
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Application publication date: 20160601 |