CN105825019B - A kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm - Google Patents
A kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm Download PDFInfo
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Abstract
A kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm, the equivalent Cauer heat transfer network model thermal resistance thermal capacitance parameters of the power attenuation model fitting parameter of extraction IGBT module and 7 ranks and environment temperature first, then according to the gate pole trigger signal in the current iteration period and a upper iteration cycle detected from electrical network model, judge IGBT, anti-parallel diodes (FWD) are in current iteration period state in which, then IGBT is calculated, power attenuations of the FWD in current iteration period corresponding state, the power attenuation and environment temperature in last IGBT module heat transfer network model synthesis current iteration period, solve IGBT module temperature.The real-time calculating of IGBT module temperature not only may be implemented in IGBT module temperature derivation algorithm proposed by the present invention, but also can be that the heat dissipation design of IGBT module, performance optimization, reliability assessment etc. lay the foundation.
Description
Technical field
The present invention relates to a kind of temperature derivation algorithms, and in particular to a kind of insulated gate bipolar transistor IGBT module temperature is asked
Resolving Algorithm.
Background technology
Igbt (IGBT) module temperature not only directly affects the heat dissipation design of IGBT module, working performance
And service life, but also the long-term reliability of converter system is will have a direct impact on, therefore IGBT module temperature is obtained for true
The normal safe operation for protecting converter system is of great significance.
It is existing more about IGBT module silicon chip PN junction temperature (junction temperature), the acquisition methods of skin temperature.Chinese patent
ZL：201410205679.8 disclosed《Wind electric converter IGBT module junction temperature on-line calculation method》, considering IGBT module electricity
Under the premise of thermal coupling characteristic, it is lost in line computation IGBT module junction temperature based on switch periods；Chinese patent ZL：
201310442045.X disclosed《The real-time estimating method of IGBT module shell temperature》, the thermoelectricity in parallel with thermal capacitance by establishing thermal resistance
Road model simulates the heat transfer process of IGBT module shell, and then estimates IGBT module skin temperature；Chinese patent ZL：
201410345265.5 disclosed《A kind of on-line detecting system and detection method of IGBT module working junction temperature》, using it is temperature sensitive when
Between substantial connection under fixed shutdown voltage, current conditions with IGBT module working junction temperature, pass through and extract temperature sensitive time indirect
Calculate junction temperature；Chinese patent ZL：201410853960.2 disclosed《A kind of steady temperature calculating method of IGBT module》, pass through
Power attenuation, crust thermal resistance, thermal conductive contact material thermal resistance, the thermal resistance of radiator to environment for inputting IGBT module, calculate IGBT
The steady temperature of module silicon chip PN junction, shell.However, above-mentioned patent is not directed to the calculating of IGBT module temperature, because
IGBT module includes not only silicon chip PN junction, shell, further includes upper solder layer, upper layers of copper, ceramic layer, lower layers of copper, lower solder layer
With the structure sheafs such as substrate.In conclusion there is no the acquisition methods in relation to IGBT module temperature at present.
Therefore, a kind of completely new IGBT module temperature derivation algorithm is invented, is set in engineer application for promoting IGBT module
Work in meter is of great significance with application efficiency.
Invention content
Problem to be solved by this invention is the deficiency for above-mentioned existing model and method, provides a kind of insulated gate bipolar
Transistor IGBT module temperature derivation algorithm.
The technical solution adopted in the present invention is：
To achieve the goals above, the present invention provides the following technical solutions：
Step 1：Extract power attenuation model fitting parameter a, b, c, d and the equivalent Cauer heat transfer meshes of 7 ranks of IGBT module
Network model thermal resistance thermal capacitance parameter R, C and environment temperature TA；
Step 2：It is triggered and is believed according to the gate pole in the current iteration period and a upper iteration cycle detected from electrical network model
Number VG[k]、VG[k-1], judge that IGBT, anti-parallel diodes (FWD) in current iteration period state in which, that is, are connected, open
Logical or off state；
Step 3：The Current Voltage I of IGBT, FWD are flowed through based on the current iteration periodC[k]、VCE[k]、IF[k]、VD[k]And
Junction temperature TTj[k]、TDj[k], power attenuation Ps of calculating IGBT, the FWD in current iteration period corresponding stateloss[k]；
Step 4：The power attenuation P in IGBT module heat transfer network model synthesis current iteration periodloss[k]And environment temperature
Spend TA, solve IGBT module temperature T[k+1]；
Step 5：If the temperature iteration variable in adjacent output period meets the condition of convergence, solves calculating and terminate, output
The power attenuation P of IGBT moduleloss[k]With each layer temperature T[k]；If the temperature iteration variable in adjacent output period is unsatisfactory for
The condition of convergence, then by T[k],VG[k-1]It is updated to T[ respectively;k+1],VG[k], step 2 is repeated to four, until adjacent output week
Until the temperature iteration variable of phase meets the condition of convergence.
Further, step 2 judges that IGBT, FWD are in the standard of current iteration period status：
Further, the IGBT conduction losses P in step 3Tcon, IGBT turn-on consumptions Pon, IGBT turn-off power losses Poff、FWD
Conduction loss PDcon, FWD turn-off power losses (also known as reverse recovery loss) PrrRespectively：
PTcon(TTj,IC)=aT·TTj+bT
In above formula, aTAnd bTRespectively：
bT=PTcon(TTmin,IC)-aT·TTmin
PTcon(TTmin,IC)=a1·IC 3+b1·IC 2+c1·IC+d1
PTcon(TTmax,IC)=a2·IC 3+b2·IC 2+c2·IC+d2
Fitting coefficient a in above formula1、b1、c1、d1、a2、b2、c2、d2It can be fitted to obtain by MATLAB Fitting Toolbox.
FWD conduction losses PDconComputational methods and above-mentioned IGBT conduction losses PTconComputational methods are similar.
IGBT turn-on consumptions PonFor：
Pon=Eon·fsw·VCE/Vrated
In above formula, fswFor IGBT switching frequencies；VCEOperating voltage, V are penetrated for IGBT collectionratedFor IGBT rated operational voltages；
Open ENERGY EonFor：
Eon=aon·TTj+bon
Eon(TTmin,IC)=a3·IC 3+b3·IC 2+c3·IC+d3
Eon(TTmax,IC)=a4·IC 3+b4·IC 2+c4·IC+d4
bon=Pon(TTmin,IC)-aon·TTmin
Fitting coefficient a in above formula3、b3、c3、d3、a4、b4、c4、d4It can be fitted to obtain by MATLAB Fitting Toolbox.
IGBT turn-off power losses Poff, FWD reverse recovery loss PrrComputational methods and above-mentioned IGBT conduction losses PTconCalculating side
Method is similar.
Further, in step 4 IGBT module heat transfer network model be to be primarily based on electric heating analogy theory, construct with
The equivalent Cauer heat transfers network model of 1 corresponding IGBT module of attached drawing, 7 rank, then passes through obtained by Runge-Kutta method difference processing,
I.e.：
In above formula, k=0,1,2,3 ...；Matrix T indicates the matrix of IGBT module each layer temperature from top to bottom, i.e. T=[T1
T2 T3 T4 T5 T6 T7]T；U=[Ploss TA]T；tsimFor simulation step length；Matrix A, B, K1、K2、K3、K4It is shown below respectively,
Wherein, R8For heat radiator thermal resistance.
K1=AT[k]+B·U[k]
K4=A (T[k]+tsim·K3)+B·U(tk+1,T[k]+tsim·K3)
Further, the condition of convergence of step 5 is：
||T[k+n]-T[k]||∞≤M
In formula, M is predetermined accuracy, and n is the iterative calculation number in an output period.
A kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm of the present invention, can be in the base for ensureing computational accuracy
On plinth, the problems such as modeling process is complicated, model parameter extraction is difficult, amount of data storage is excessive, emulation is time-consuming serious is avoided, is
Raising and power transmission and transformation work of the IGBT module with the efficient design, working performance and service life of converter system radiator structure
Journey high voltage direct current converter valve, Static Var Compensator, the Topology Structure Design of THE UPFC, long-term reliability assessment etc.
Aspect provides service and lays the foundation.
Description of the drawings
Invention is further described in detail in the following with reference to the drawings and specific embodiments：
Fig. 1 is the equivalent Cauer heat transfers network model schematic of igbt (IGBT) module.
Fig. 2 is IGBT module temperature derivation algorithm schematic diagram.
Fig. 3 is IGBT module vertical layer structure schematic diagram.
Fig. 4 is IGBT module temperature simulation resolution principle block diagram in two level three-phase voltage source inverters.
Fig. 5 is IGBT module igbt chip and its following layers temperature in two level three-phase voltage source inverters.
Fig. 6 is IGBT module FWD chips and its following layers temperature in two level three-phase voltage source inverters.
Specific implementation mode
As shown in Fig. 2, a kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm, specifically includes following steps：
Step 1：Extract power attenuation model fitting parameter a, b, c, d of IGBT module.
First, IGBT minimum representative temperatures T IGBT module product data handbook providedTminWith maximum representative temperature
TTmaxUnder VCE-ICOutput characteristic curve is converted to corresponding PTcon-ICCharacteristic curve；Then, in MATLAB Fitting Toolbox
It is middle IGBT on-state loss PTconWith collector current ICFitting of a polynomial, obtain fitting coefficient a1、b1、c1、d1And a2、b2、
c2、d2.FWD on-state loss PTconFitting coefficient extracting method it is similar.
The IGBT minimum representative temperatures T provided according to IGBT module product data handbookTminWith maximum representative temperature TTmaxUnder
Eon-ICCharacteristic curve, handle opens ENERGY E in MATLAB Fitting ToolboxonWith collector current ICFitting of a polynomial, obtain
To fitting coefficient a3、b3、c3、d3And a4、b4、c4、d4；IGBT turns off ENERGY Eoff, FWD Reverse recovery ENERGY EsrrFitting coefficient
Extracting method is similar.
Step 2：Extract heat transfer network model thermal resistance thermal capacitance parameter R, C and environment temperature T of IGBT moduleA。
As shown in Fig. 3, there are 7 different layers inside IGBT module, be respectively from top to bottom：Silicon chip, upper solder layer, on
Layers of copper, ceramic layer, lower layers of copper, lower solder layer and substrate.The transient thermal resistance of the equivalent Foster heat transfers network model of 7 rank of IGBT module
Anti- expression formula is shown below.
In formula, ri、τiThe thermal resistance and time constant of respectively equivalent i-th layer of network model of Foster heat transfers.
Since IGBT module product data handbook is generally provided by testing IGBT, FWD the transient thermal impedance song measured
Line, therefore the fitting of 7 rank exponential series is carried out to it, each unknown parameters ' value of above formula can be obtained.La Pula is carried out to above formula
This transformation, obtains：
According to the definition of complex impedance, the thermal impedance of the equivalent Cauer heat transfers network model of 7 ranks is：
According to the principle that equivalent Foster, Cauer heat transfer the network model thermal impedance of IGBT module is identical, i.e. Zth(j-c)(s)
=Z 'th(j-c)It (s), can be in the hope of each rank thermal resistance R of the equivalent Cauer heat transfers network model of 7 ranksiWith thermal capacitance Ci, i.e. IGBT module is each
The thermal resistance and thermal capacitance value of physical arrangement layer.
Step 3：It is triggered and is believed according to the gate pole in the current iteration period and a upper iteration cycle detected from electrical network model
Number VG[k]、VG[k-1], judge that IGBT, FWD in current iteration period state in which, that is, are connected, are switched on or off state.
Judge IGBT, FWD is in the standard of current iteration period status：
Step 4：The Current Voltage I of IGBT, anti-parallel diodes (FWD) is flowed through based on the current iteration periodC[k]、VCE
[k]、IF[k]、VD[k]And junction temperature TTj[k]、TDj[k], power attenuations of calculating IGBT, the FWD in current iteration period corresponding state
Ploss[k]。
IGBT conduction losses PTcon, IGBT turn-on consumptions Pon, IGBT turn-off power losses PoffFWD conduction losses PDcon, FWD close
Breakdown consumption (also known as reverse recovery loss) PrrCalculation formula is respectively：
PTcon(TTj,IC)=aT·TTj+bT
In above formula, aTAnd bTRespectively：
bT=PTcon(TTmin,IC)-aT·TTmin
PTcon(TTmin,IC)=a1·IC 3+b1·IC 2+c1·IC+d1
PTcon(TTmax,IC)=a2·IC 3+b2·IC 2+c2·IC+d2
FWD conduction losses PDconComputational methods and above-mentioned IGBT conduction losses PTconComputational methods are similar.
IGBT turn-on consumptions PonCalculation formula is：
Pon=Eon·fsw·VCE/Vrated
In above formula, fswFor IGBT switching frequencies；VCEOperating voltage, V are penetrated for IGBT collectionratedFor IGBT rated operational voltages；
Open ENERGY EonFor：
Eon=aon·TTj+bon
Eon(TTmin,IC)=a3·IC 3+b3·IC 2+c3·IC+d3
Eon(TTmax,IC)=a4·IC 3+b4·IC 2+c4·IC+d4
bon=Pon(TTmin,IC)-aon·TTmin
IGBT turn-off power losses Poff, FWD reverse recovery loss PrrComputational methods and above-mentioned IGBT conduction losses PTconCalculating side
Method is similar.
Step 5：The loss P in IGBT module heat transfer network model synthesis current iteration periodloss[k]And environment temperature TA,
Solve the temperature matrices T[ of IGBT module;k+1].
IGBT module heat transfer network model is shown below, by the loss P in IGBT module current iteration periodloss[k]And
Environment temperature TAIt substitutes into wherein, you can calculating acquires IGBT module temperature matrices T[k+1].
In above formula, k=0,1,2,3 ...；Matrix T indicates the matrix of IGBT module each layer temperature from top to bottom, i.e. T=[T1
T2 T3 T4 T5 T6 T7]T；tsimFor simulation step length；K1、K2、K3、K4It is shown below respectively.
K1=AT[k]+B·U[k]
K4=A (T[k]+tsim·K3)+B·U(tk+1,T[k]+tsim·K3)
In above formula, U=[Ploss TA]T；Matrix A, B are shown below, wherein R8For heat radiator thermal resistance.
Step 6：If the temperature iteration variable in adjacent output period meets the condition of convergence, simulation calculation terminates, output
The power attenuation P of IGBT moduleloss[k]With each layer temperature T[ of IGBT module;k]；If the temperature iteration in adjacent output period becomes
Amount is unsatisfactory for the condition of convergence, then by T[k],VG[k-1]It is updated to T[ respectively;k+1],VG[k], step 2 is repeated to four, Zhi Daoxiang
The temperature iteration variable in neighbour's output period meets the condition of convergence.
Wherein, the condition of convergence is：
||T[k+n]-T[k]||∞≤M
In formula, M is predetermined accuracy, and n is the iterative calculation number in an output period.
The IGBT module temperature derivation algorithm that aforementioned present invention proposes is compiled into dynamic link library file (DLL), and is led
Enter in Saber softwares, establishes the temperature calculation models of IGBT module in two level three-phase voltage source inverters.Attached drawing 4 is two electricity
IGBT module temperature simulation resolution principle block diagram in flat three-phase voltage source inverter, the result of calculation such as attached drawing of IGBT module temperature
5, shown in 6.Fig. 5 is respectively igbt chip and its following layers temperature from top to bottom；Fig. 6 from top to bottom be respectively FWD chips and
Its following layers temperature.
Claims (3)
1. a kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm, which is characterized in that realize IGBT module temperature
Rapid solving comprises the steps of：
Step 1：Extract power attenuation model fitting parameter a, b, c, d and the equivalent Cauer heat transfers network mould of 7 ranks of IGBT module
Type thermal resistance thermal capacitance parameter R, C and environment temperature TA；
Step 2：According to the gate pole trigger signal V in the current iteration period and a upper iteration cycle that are detected from electrical network modelG
[k]、VG[k-1], judge IGBT, anti-parallel diodes FWD in current iteration period state in which, that is, be connected, open or
Off state；
Step 3：The Current Voltage I of IGBT, FWD are flowed through based on the current iteration periodC[k]、VCE[k]、IF[k]、VD[k]And junction temperature
TTj[k]、TDj[k], power attenuation Ps of calculating IGBT, the FWD in current iteration period corresponding stateloss[k]；
Step 4：The power attenuation P in IGBT module heat transfer network model synthesis current iteration periodloss[k]And environment temperature TA,
Solve IGBT module temperature T[k+1]；
Step 5：If the temperature iteration variable in adjacent output period meets the condition of convergence, solves calculating and terminate, export IGBT
The power attenuation P of moduleloss[k]With each layer temperature T[k]；If the temperature iteration variable in adjacent output period is unsatisfactory for restraining
Condition, then by T[k],VG[k-1]It is updated to T[ respectively;k+1],VG[k], step 2 is repeated to four, until the adjacent output period
Until temperature iteration variable meets the condition of convergence；
Wherein, IGBT module heat transfer network model be constructed first with electric heating analogy theory IGBT module 7 ranks it is equivalent
Cauer heat transfer network models, then pass through obtained by Runge-Kutta method difference processing.
2. a kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm according to claim 1, which is characterized in that
Step 2 judges that IGBT, FWD are in the standard of current iteration period status：
3. a kind of insulated gate bipolar transistor IGBT module temperature derivation algorithm according to claim 1, which is characterized in that
The condition of convergence of step 5 is：
||T[k+n]-T[k]||∞≤M
In formula, M is predetermined accuracy, and n is the iterative calculation number in an output period.
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