CN110502720B - Loss on-line calculation method of power semiconductor module and application method and device thereof - Google Patents
Loss on-line calculation method of power semiconductor module and application method and device thereof Download PDFInfo
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Abstract
According to the method and the device for calculating the loss of the power semiconductor module on line, which are provided by the invention, in the operation process of the power semiconductor module, the estimated junction temperature of the power semiconductor module obtained through the junction temperature observer at the previous moment is used as closed-loop feedback, and the conduction loss and the switching loss of a device generating loss in the power semiconductor module are calculated by using the loss related parameters from switching cycle to switching cycle; that is, according to the real-time sampled data and the estimated junction temperature obtained by the previous observation, the real-time loss power is calculated on line, and compared with the prior art, the accuracy of loss calculation is improved, and the accuracy of junction temperature estimation is further improved.
Description
Technical Field
The invention relates to the technical field of automatic control, in particular to an online loss calculation method of a power semiconductor module, and an application method and device thereof.
Background
Because the chip temperature of the power semiconductor module cannot be directly measured, in the prior art, the junction temperature is generally estimated indirectly by adopting a junction temperature online estimation method based on a thermal impedance model, as shown in fig. 1, a thermal impedance model from a chip junction to be measured to a reference temperature point is firstly built, then the temperature difference of the junction relative to the reference temperature is calculated according to the thermal impedance parameter and the chip loss (i.e. the power of the chip loss), and the reference temperature is added to calculate the junction temperature.
The method is simple and low in cost, but the chip loss in the scheme is usually obtained by online table look-up according to working conditions, the accuracy is low, and the finally obtained estimated junction temperature is inaccurate.
Disclosure of Invention
The invention provides an online loss calculation method of a power semiconductor module, and an application method and device thereof, so as to improve the accuracy of junction temperature estimation.
In order to achieve the above purpose, the technical scheme provided by the application is as follows:
one aspect of the present invention provides a method for online calculation of loss of a power semiconductor module, including:
receiving the switching frequency, the duty ratio and the estimated junction temperature of the power semiconductor module in the current switching period, and the current flowing through the power semiconductor module and the direct current bus voltage of a circuit where the power semiconductor module is positioned; the estimated junction temperature of the power semiconductor module in the current switching period is obtained through a junction temperature observer at the previous moment;
determining a device generating loss in the power semiconductor module according to the current flowing through the power semiconductor module in the current switching period;
and according to the switching frequency, the duty ratio and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the direct current bus voltage of a circuit where the power semiconductor module is positioned, calculating to obtain the conduction loss and the switching loss of a device generating loss in the power semiconductor module as the real-time loss power of the power semiconductor module.
Optionally, according to the switching frequency, the duty cycle and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module, and the dc bus voltage of the circuit in which the power semiconductor module is located, the conduction loss and the switching loss of the device generating the loss in the power semiconductor module are calculated, and the conduction loss and the switching loss are used as the real-time loss power of the power semiconductor module, and the method comprises the following steps:
calculating to obtain the conduction loss of a device generating loss in the power semiconductor module according to the duty ratio and the estimated junction temperature of the power semiconductor module and the current flowing through the power semiconductor module in the current switching period;
according to the switching frequency and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the DC bus voltage of the circuit where the power semiconductor module is positioned, the switching loss of a device generating loss in the power semiconductor module is calculated;
and taking the sum of the conduction loss and the switching loss of the device generating loss in the power semiconductor module as the real-time loss power of the power semiconductor module.
Optionally, calculating the conduction loss of the device generating the loss in the power semiconductor module according to the duty ratio and the estimated junction temperature of the power semiconductor module and the current flowing through the power semiconductor module in the current switching period, including:
determining the conduction voltage drop of a device generating loss in the power semiconductor module according to the estimated junction temperature of the power semiconductor module and the current flowing through the power semiconductor module in the current switching period;
and calculating to obtain the conduction loss of the device generating the loss in the power semiconductor module according to the duty ratio of the power semiconductor module, the current flowing through the power semiconductor module and the conduction voltage drop of the device generating the loss in the power semiconductor module in the current switching period.
Optionally, according to the switching frequency and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module, and the dc bus voltage of the circuit in which the power semiconductor module is located, the switching loss of the device generating the loss in the power semiconductor module is calculated, including:
determining switching energy of a device generating loss in the power semiconductor module according to the estimated junction temperature of the power semiconductor module, current flowing through the power semiconductor module and direct current bus voltage of a circuit in which the power semiconductor module is positioned in the current switching period;
and calculating the switching loss of the device generating the loss in the power semiconductor module according to the switching frequency of the power semiconductor module in the current switching period and the switching energy of the device generating the loss in the power semiconductor module.
Optionally, the power semiconductor module includes: an IGBT chip and a diode chip connected in anti-parallel;
determining a device generating loss in the power semiconductor module according to the current flowing through the power semiconductor module in the current switching period, comprising:
if the current flowing through the power semiconductor module in the current switching period flows from the collector to the emitter of the IGBT chip, determining that a device generating loss in the power semiconductor module is the IGBT chip;
and if the current flowing through the power semiconductor module in the current switching period flows from the emitter to the collector of the IGBT chip, determining that the device generating loss in the power semiconductor module is the diode chip.
Optionally, if the device generating the loss in the power semiconductor module is the IGBT chip, the switching energy of the device generating the loss in the power semiconductor module includes: the on energy and the off energy of the IGBT chip;
if the device generating the loss in the power semiconductor module is the diode chip, the switching energy of the device generating the loss in the power semiconductor module includes: the reverse recovery energy of the diode chip.
The second aspect of the present invention provides a junction temperature online estimation method for a power semiconductor module, including:
according to any one of the above-mentioned power semiconductor module loss on-line calculation methods, the real-time loss power of the power semiconductor module is obtained;
building a junction temperature observer according to a thermal impedance model of the power semiconductor module;
and obtaining the estimated junction temperature of the power semiconductor module through the junction temperature observer according to the real-time loss power and the sampling temperature of the negative temperature coefficient component NTC in the power semiconductor module.
Optionally, the node in the thermal impedance model of the power semiconductor module at least includes: IGBT chip junction temperature node, diode chip junction temperature node, NTC temperature node and temperature reference node.
Optionally, the node in the thermal impedance model of the power semiconductor module further includes: a temperature node of adjacent power semiconductor modules of the power semiconductor modules;
the thermal impedance model of the power semiconductor module is a three-dimensional thermal network model.
Optionally, before the junction temperature observer is built according to the thermal impedance model of the power semiconductor module, the junction temperature observer further comprises:
constructing a thermal impedance model of the power semiconductor module;
and obtaining model parameters of the thermal impedance model of the power semiconductor module by adopting a finite element analysis or experimental mode.
Optionally, building a junction temperature observer according to a thermal impedance model of the power semiconductor module includes:
and taking the temperature of each node in the thermal impedance model as a state variable, taking the loss generated by each node in the thermal impedance model as an input variable, and taking the temperature of the NTC temperature node in the thermal impedance model as an output variable, and building the junction temperature observer.
Optionally, the state space equation of the junction temperature observer is:
y(t)＝Cx(t)；
wherein,is the differentiation of the state variable, x (t) is the state variable of the junction temperature observer, u (t) is the input variable of the junction temperature observer, y (t) is the output variable of the junction temperature observer, A is the system matrix of the junction temperature observer, B is the input matrix of the junction temperature observer, C is the output matrix of the junction temperature observer, L is the feedback matrix of the junction temperature observer, y * (t) is an actual measurement of the junction temperature observer output variable; and:
meanwhile, elements on the diagonal satisfy: />
C＝[1 0 L 0]。
Optionally, when the junction temperature observer is an open loop observer, l=0;
when the junction temperature observer is a closed-loop observer, the value of L is obtained by adopting a zero pole allocation method.
Optionally, the operation frequency of the junction temperature observer is greater than or equal to the switching frequency of the power semiconductor module in the current switching period.
The third aspect of the present invention further provides a processor, configured to perform the method for online calculation of a loss of a power semiconductor module according to any one of the above, and/or the method for online estimation of a junction temperature of a power semiconductor module according to any one of the above.
The fourth aspect of the invention also provides a motor controller comprising a processor as described above.
According to the method for calculating the loss of the power semiconductor module on line, in the operation process of the power semiconductor module, the estimated junction temperature of the power semiconductor module obtained through the junction temperature observer at the previous moment is used as closed-loop feedback, and the conduction loss and the switching loss of a device generating loss in the power semiconductor module are calculated by using the loss related parameters on a switching cycle-by-switching cycle basis; that is, according to the real-time sampled data and the estimated junction temperature obtained by the previous observation, the real-time loss power is calculated on line, and compared with the prior art, the accuracy of loss calculation is improved, and the accuracy of junction temperature estimation is further improved.
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In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are necessary for the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention and that other drawings may be obtained from them without inventive effort for a person skilled in the art.
FIG. 1 is a logic block diagram of a junction temperature online estimation method provided by the prior art;
fig. 2 is a flowchart of a method for online calculating a loss of a power semiconductor module according to an embodiment of the present disclosure;
FIG. 3 is a logic block diagram of online estimation of junction temperature provided by an embodiment of the present invention;
fig. 4 is another flowchart of a method for online calculating a loss of a power semiconductor module according to an embodiment of the present disclosure;
FIG. 5 is a flowchart of a method for online estimating junction temperature of a power semiconductor module according to another embodiment of the present disclosure;
FIG. 6 is a schematic structural diagram of a thermal impedance model according to another embodiment of the present invention;
FIG. 7 is a logic block diagram of an open loop observer provided by another embodiment of the present application;
fig. 8 is a logic block diagram of a closed loop observer provided in accordance with another embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In this application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
The invention provides an online loss calculation method of a power semiconductor module, which is used for improving the accuracy of junction temperature estimation.
Referring to fig. 2, the method for calculating the loss of the power semiconductor module includes:
s101, receiving the switching frequency, the duty ratio and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the direct current bus voltage of a circuit where the power semiconductor module is located.
The estimated junction temperature of the power semiconductor module in the current switching period is obtained through a junction temperature observer at the previous moment. Fig. 3 is a logic block diagram of an online junction temperature estimation method of a power semiconductor module, and as can be seen from fig. 3, the junction temperature T estimated at the last moment outputted by the junction temperature observer Vj Will be used as the estimated junction temperature T of the power semiconductor module in the current switching cycle Vj After the real-time loss power Ploss of the power semiconductor module is obtained by the on-line loss calculation of the power semiconductor module, the acquired NTC temperature is combined by a junction temperature observer to generate an estimated junction temperature T Vj A closed loop for online estimation of junction temperature is formed. The parameters of the online loss calculation process are derived from module electrical parameters, and the parameters of the junction temperature observer for estimating the junction temperature are derived from module thermal parameters.
Taking power semiconductor modules in each bridge arm of an inverter circuit in a motor controller as an example for explanation, each power semiconductor module includes: an IGBT chip and a diode chip connected in anti-parallel; the main control program of the processor in the motor controller determines the switching action of each bridge arm in each switching period according to the SVPWM modulation strategy, so that the on time, the duty ratio d and the switching frequency f of each bridge arm are controlled s May be provided by a main control program of the processor. Three-phase current magnitude I in each switching cycle S Can be obtained by sampling in real time by a current sensor, and then can obtain the current I flowing through the power semiconductor module in the current switching period C The method comprises the steps of carrying out a first treatment on the surface of the And since the switching cycle time is short enough, in the switching cycleThe magnitude of the internal current is substantially unchanged. The circuit in which the power semiconductor module is located, i.e. the inverter circuit, which has a DC bus voltage U dc The estimated junction temperature is obtained by a voltage sampling circuit and is output by a junction temperature observer to form a closed loop.
S102, determining a device generating loss in the power semiconductor module according to the current flowing through the power semiconductor module in the current switching period.
When the bridge arm is conducted, if the current flowing through the power semiconductor module in the current switching period flows from the collector to the emitter of the IGBT chip, the current flows through the IGBT chip, and the device generating loss in the power semiconductor module is determined to be the IGBT chip; if the current flowing through the power semiconductor module in the current switching period flows from the emitter to the collector of the IGBT chip, the current flows through the diode chip, and the device generating loss in the power semiconductor module is determined to be the diode chip.
In practical application, the loss of each bridge arm is calculated on line, and a loss source is judged according to the current direction in each switching period; specifically, the current flowing from the collector to the emitter of the IGBT chip may be set to be positive, and the current flowing from the emitter to the collector of the IGBT chip may be set to be negative; this is only an example, and it is within the scope of the present application, depending on the specific application environment.
And S103, calculating the conduction loss and the switching loss of a device generating loss in the power semiconductor module according to the switching frequency, the duty ratio and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the DC bus voltage of a circuit where the power semiconductor module is positioned, and taking the conduction loss and the switching loss as the real-time loss power of the power semiconductor module.
Since the power semiconductor module is formed by connecting the IGBT chip and the diode chip in parallel, it is necessary to estimate the junction temperature of the IGBT chip and the diode chip, respectively, and it is also necessary to calculate the loss on line for the IGBT chip and the diode chip individually.
Wherein IGBT loss P IGBT Can be further divided into conduction losses P according to the working state IGBT_cond And switching loss P IGBT_sw I.e. P IGBT ＝P IGBT_cond +P IGBT_sw . Likewise, diode loss P D Also divided into conduction losses P D_cond And reverse recovery loss P D_rec I.e. P D ＝P D_cond +P D_rec . Thus, specifically, step S103 includes:
(1) And calculating the conduction loss of the device generating the loss in the power semiconductor module according to the duty ratio of the power semiconductor module in the current switching period, the estimated junction temperature and the current flowing through the power semiconductor module.
Specifically, as shown in fig. 4:
s201, determining the conduction voltage drop of a device generating loss in the power semiconductor module according to the estimated junction temperature of the power semiconductor module and the current flowing through the power semiconductor module in the current switching period.
S202, calculating to obtain the conduction loss of the device generating the loss in the power semiconductor module according to the duty ratio of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the conduction voltage drop of the device generating the loss in the power semiconductor module.
(2) And calculating the switching loss of a device generating loss in the power semiconductor module according to the switching frequency and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the DC bus voltage of a circuit where the power semiconductor module is positioned.
Specifically, as shown in fig. 4:
s301, determining the switching energy of a device generating loss in the power semiconductor module according to the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the direct current bus voltage of a circuit where the power semiconductor module is located.
S302, according to the switching frequency of the power semiconductor module in the current switching period and the switching energy of the device generating the loss in the power semiconductor module, the switching loss of the device generating the loss in the power semiconductor module is calculated.
(3) The sum of the conduction loss and the switching loss of the device generating loss in the power semiconductor module is taken as the real-time loss power of the power semiconductor module.
Specifically, if the loss generated by the IGBT chip is obtained in step S102, the loss of the diode chip is determined to be 0; then, according to the current I flowing through the power semiconductor module in the current switching period C And, an estimated junction temperature T of the power semiconductor module during the current switching cycle Vj The conduction voltage drop V of the IGBT chip is obtained through table lookup or calculation ce The method comprises the steps of carrying out a first treatment on the surface of the And according to the current I flowing through the power semiconductor module in the current switching period C Estimated junction temperature T of power semiconductor module in current switching period Vj DC bus voltage U of circuit where power semiconductor module is located dc The switching energy is obtained by looking up a table or calculating, and specifically comprises switching energy E on And off energy E off . In the switching period, the duty ratio of the power semiconductor module is d, and the switching frequency is f s The average loss of the IGBT chip in the switching period is:
if the loss of the diode chip is obtained in the step S102, determining that the loss of the IGBT chip is 0; then, also according to the current I flowing through the power semiconductor module in the current switching period C And, an estimated junction temperature T of the power semiconductor module during the current switching cycle Vj Obtaining the conduction voltage drop V through table look-up or calculation D The method comprises the steps of carrying out a first treatment on the surface of the And according to the current I flowing through the power semiconductor module in the current switching period C Estimated junction temperature T of power semiconductor module in current switching period Vj DC bus voltage U of circuit where power semiconductor module is located dc The switching energy, in particular the reverse recovery energy E, is obtained by looking up a table or calculating rec The average loss of the diode chip in the switching period is:
the table look-up data or the calculation formula used for the loss related parameters can be in the modes of official data, off-line experiment calibration and the like, are not particularly limited herein, and are all within the protection scope of the application depending on the application environment.
In the method for calculating the loss of the power semiconductor module on line provided by the embodiment, during the operation process of the power semiconductor module, the estimated junction temperature of the power semiconductor module obtained through the junction temperature observer at the previous moment is used as closed-loop feedback, and the average loss of devices generating loss in the power semiconductor module is calculated by using the loss related parameters according to the switching cycle, including the conduction loss and the switching loss; that is, according to the data sampled in real time and the estimated junction temperature obtained by the previous observation, the instantaneous loss of each chip in the power semiconductor module is calculated on line, so as to obtain the real-time loss power of the power semiconductor module. Moreover, chip loss is calculated cycle by cycle, so that instantaneous junction temperature observation can be performed; when the chip is heated, the junction temperature time constant is very small, and the chip can be timely and effectively protected only by more accurate instantaneous junction temperature estimation.
In addition, by adopting the method for calculating the loss of the power semiconductor module on line provided by the embodiment, the instantaneous loss of each chip in the power semiconductor module can be calculated at the same time, so that the temperature of each chip in the power semiconductor module can be further estimated, and the temperature estimation precision when the temperature distribution is asymmetric is improved.
Another embodiment of the present invention further provides a method for online estimating a junction temperature of a power semiconductor module, as shown in fig. 5, including:
s401, obtaining real-time loss power of the power semiconductor module according to an online loss calculation method of the power semiconductor module.
The specific process and principle of the method for calculating the loss of the power semiconductor module on line can be seen in the previous embodiment, and will not be described in detail here.
S402, constructing a thermal impedance model of the power semiconductor module.
In practical application, the heat dissipation of the motor controller can be water-cooled, and the loss generated in the working process of the chip of each bridge arm power semiconductor module in the inverter circuit flows to the cooling water in a minimum thermal resistance path. In order to build the thermal impedance model of the power semiconductor module, a thermal network node is firstly required to be selected, wherein the thermal network node at least comprises an IGBT chip junction temperature node, a diode chip junction temperature node, an NTC temperature node and a temperature reference node, the temperature reference node represents the temperature of cooling water, can also be the ring temperature, the NTC temperature and the like, and the model is convenient to expand. In addition, other nodes can be added to describe the heat flow dynamic behavior between the nodes and the cooling water in detail; if the thermal coupling between different bridge arms or different phases is not negligible, the nodes of the corresponding bridge arm, namely the temperature nodes of the adjacent power semiconductor modules of the power semiconductor module, need to be increased so as to improve the precision of the thermal impedance model. The thermal network model structure considering the coupling of the upper bridge arm and the lower bridge arm is shown in fig. 6, wherein a node 1 is an NTC temperature node Sensor, a node 2 is an upper bridge arm IGBT chip junction temperature node igbt_hs, an upper bridge arm IGBT chip real-time loss power is a plus igbt_hs, a node 3 is an upper bridge arm Diode chip junction temperature node diode_hs, an upper bridge arm Diode chip real-time loss power is a plus diode_hs, a node 4 is a lower bridge arm Diode chip junction temperature node diode_ls, a lower bridge arm Diode chip real-time loss power is a plus diode_ls, a node 5 is a lower bridge arm IGBT chip junction temperature node igbt_ls, a lower bridge arm IGBT chip real-time loss power is a plus igbt_ls, nodes 6-9 are each node on an upper Copper layer (coppers_top) right below the chip, nodes 10-13 are each node on a lower Copper layer (coppers_bottom) right below the chip, nodes 14-17 are each node on a Sink (Heat Sink) right below the chip, and a water inlet node 18 is a water inlet node (cooling node 19); the connection relationship between each node is shown in fig. 6, and will not be described in detail here.
The thermal coupling between different nodes is characterized by thermal resistance, and only the thermal coupling between adjacent nodes is considered in the embodiment; of course, a more complex thermal impedance model may be provided in practical applications to account for the thermal coupling effects of other remote nodes on the power semiconductor module. Meanwhile, each node has an equivalent node heat capacity relative to a 0-temperature reference, and the node heat capacity is infinite for cooling water. The overall model is similar to a common Cauer thermal network model, but the three-dimensional thermal network model is adopted as the thermal impedance model of the power semiconductor module, so that the problem that the steady-state junction temperature can only be estimated by adopting the one-dimensional thermal impedance model in the prior art is avoided, the thermal coupling between different chips can be considered, the thermal coupling is more fit and practical, and the thermal impedance model is conveniently expanded to modules with different packages and structures; and moreover, the temperature of each layer in the module can be measured, so that failure analysis and service life estimation are convenient to carry out.
S403, obtaining model parameters of the thermal impedance model of the power semiconductor module by adopting finite element analysis or experimental mode.
The specific parameters of the thermal network model can be obtained by adopting a finite element analysis or experimental method. If the detailed structure, the materials of each layer and the detailed size inside the module are known, finite element thermal simulation can be adopted, and according to the steady state and the instantaneous temperature of each node thermal simulation, the thermal resistance between each node and the thermal capacity parameters of each node can be extracted. The method of finite element analysis is also convenient for determining the nodes with physical significance on the heat flow path according to the actual physical model.
S404, building a junction temperature observer according to a thermal impedance model of the power semiconductor module.
In practical applications, the junction temperature observer may be an open loop observer or a closed loop observer.
Model parameters of the junction temperature observer are obtained by a thermal impedance model; in order to build the observer, the thermal balance equations of all nodes need to be written in sequence according to the built thermal impedance model. Assuming that the adopted thermal impedance model has m nodes in total, T x Representing the temperature of node x; c (C) x Node heat capacity representing node x; p (P) x Representing the resulting loss of node x; r is R x,y Represents the thermal resistance between node x and node y, and satisfies: r is R x,y ＝R y,x The method comprises the steps of carrying out a first treatment on the surface of the Then for node i there is:
and (3) combining all node heat balance equations, and converting the equations into the form of the following state space equations:
the state variable is the temperature of each node:
the input variables are losses generated by each node, and specifically are:
the real-time loss power of the power semiconductor module is a loss value basis generated by an IGBT chip junction temperature node and a diode chip junction temperature node; specifically, when the IGBT has current, the real-time loss power of the power semiconductor module is the loss generated by the junction temperature node of the IGBT chip, and the loss generated by the junction temperature node of the diode chip is zero; when the diode has current, the real-time loss power of the power semiconductor module is the loss generated by the junction temperature node of the diode chip, and the loss generated by the junction temperature node of the IGBT chip is zero; when the IGBT and the diode have no current, the loss generated by the junction temperature node of the IGBT chip and the loss generated by the junction temperature node of the diode chip are zero. If each node is lossless, u (t) takes 0.
The output variable is in the system the NTC temperature characterized by the NTC temperature node:
y(t)＝T ntc ＝T 1 ；
system matrix:
wherein the elements on the diagonal satisfy:
input matrix:
output matrix:
C＝[1 0 L 0]。
after the relevant parameters of the state space equation are determined, the block diagram of the open loop observer is shown in the dashed line box in fig. 7, and the junction temperature observer essentially reconstructs a mathematical model of an actual measured system, and the state variable real-time value is the estimated real-time temperature of each node, wherein the junction temperature to be measured is contained. Wherein the superscript of "Λ" indicates the state variable and the output variable of the junction temperature observer, and the superscript of "Λ" does not indicate the variable in the real system.
In an actual control system, the junction temperature observer needs to be discretized. Since the junction temperature has a fast response speed, in order to improve the junction temperature estimation accuracy in the transient process, the operation frequency of the junction temperature observer is preferably equal to or greater than the switching frequency of the power semiconductor module in the current switching period.
If a closed-loop observer is used, feedback can be made using the NTC temperature measured in the actual system, forming a closed loop, which requires an additional design of the feedback matrix L. The state space equation of the closed-loop observer is:
wherein,is the differentiation of the state variable, x (t) is the state variable of the junction temperature observer, u (t) is the input variable of the junction temperature observer, y (t) is the output variable of the junction temperature observer, A is the system matrix of the junction temperature observer, B is the input matrix of the junction temperature observer, C is the output matrix of the junction temperature observer, L is the feedback matrix of the junction temperature observer, y * (t) is an actual measurement of the junction temperature observer output variable; and A, B, C has the same value as described above.
The design of the feedback matrix L can adopt methods such as zero pole allocation and the like, so that the stability of a closed-loop system is ensured, and meanwhile, the corresponding speed of a closed-loop observer is improved. A block diagram of a closed loop observer is shown in fig. 8. The closed-loop observer is added with a closed-loop feedback link on the basis of fig. 7, so that the anti-interference capability can be increased, and the anti-parameter sensitivity can be improved.
In practical applications, the step S401 is not limited to be performed before the step S402, and it is only necessary to complete the steps S401 and S402-S404 before the step S405, which are all within the scope of the present application.
S405, obtaining the estimated junction temperature of the power semiconductor module through a junction temperature observer according to the real-time loss power and the sampling temperature of the NTC in the power semiconductor module.
According to the junction temperature online estimation method of the power semiconductor module, loss data of each chip is calculated by using loss related parameters one by one in a switching period in the operation process of a motor controller, so that the junction temperature observer can obtain real-time loss power obtained by calculation in the previous embodiment, and the feedback NTC temperature is used as input, and a junction temperature state observer is built according to the thermal network model parameters considering coupling, so that junction temperature is continuously and iteratively observed, transient estimation of the junction temperature is further achieved, and the safety of a transient process module is protected.
In addition, the embodiment adopts the state observer to estimate the junction temperature, and only the state quantity (estimated junction temperature), the current input quantity and observer related parameters at the last moment are needed to be known in each calculation, so that the calculation is simple, the data storage quantity is small, and the additional hardware cost is not needed to be increased, thereby being beneficial to popularization.
The invention further provides a processor, which is used for executing the method for online calculation of the loss of the power semiconductor module according to the embodiment, and/or the method for online estimation of the junction temperature of the power semiconductor module according to the embodiment.
The specific principles and execution procedures of the two methods are described in the above embodiments, and are not described herein in detail.
The processor may be a processor in any device, such as a motor controller, or may be an additional independent processor, as long as the processor is used for junction temperature estimation of the power semiconductor module, which is within the scope of the present application.
Another embodiment of the present invention further provides a motor controller, where an internal processor is configured to perform the method for online calculation of the loss of the power semiconductor module according to the foregoing embodiment, and/or the method for online estimation of the junction temperature of the power semiconductor module according to the foregoing embodiment.
The specific principles and execution procedures of the two methods are described in the above embodiments, and are not described herein in detail.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for a system or system embodiment, since it is substantially similar to a method embodiment, the description is relatively simple, with reference to the description of the method embodiment being made in part. The systems and system embodiments described above are merely illustrative, wherein elements illustrated as separate elements may or may not be physically separate, and elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative elements and steps are described above generally in terms of functionality in order to clearly illustrate the interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (16)
1. The method for calculating the loss of the power semiconductor module on line is characterized by comprising the following steps of:
receiving the switching frequency, the duty ratio and the estimated junction temperature of the power semiconductor module in the current switching period, and the current flowing through the power semiconductor module and the direct current bus voltage of a circuit where the power semiconductor module is positioned; the method comprises the steps that an estimated junction temperature of a power semiconductor module in a current switching period is obtained through a junction temperature observer at the previous moment, the estimated junction temperature is used for on-line loss calculation of the power semiconductor module, after real-time loss power of the power semiconductor module is obtained, the acquired NTC temperature is combined through the junction temperature observer, the estimated junction temperature is generated, and a closed loop for on-line estimation of the junction temperature is formed;
determining a device generating loss in the power semiconductor module according to the current flowing through the power semiconductor module in the current switching period;
and according to the switching frequency, the duty ratio and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the direct current bus voltage of a circuit where the power semiconductor module is positioned, calculating to obtain the conduction loss and the switching loss of a device generating loss in the power semiconductor module as the real-time loss power of the power semiconductor module.
2. The method for online calculation of the loss of a power semiconductor module according to claim 1, wherein the calculating of the conduction loss and the switching loss of the device generating the loss in the power semiconductor module as the real-time loss power of the power semiconductor module according to the switching frequency, the duty ratio and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module, and the dc bus voltage of the circuit in which the power semiconductor module is located includes:
calculating to obtain the conduction loss of a device generating loss in the power semiconductor module according to the duty ratio and the estimated junction temperature of the power semiconductor module and the current flowing through the power semiconductor module in the current switching period;
according to the switching frequency and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module and the DC bus voltage of the circuit where the power semiconductor module is positioned, the switching loss of a device generating loss in the power semiconductor module is calculated;
and taking the sum of the conduction loss and the switching loss of the device generating loss in the power semiconductor module as the real-time loss power of the power semiconductor module.
3. The method for on-line calculation of the loss of a power semiconductor module according to claim 2, wherein calculating the conduction loss of a device generating the loss in the power semiconductor module according to the duty cycle of the power semiconductor module in the current switching cycle, the estimated junction temperature and the current flowing through the power semiconductor module comprises:
determining the conduction voltage drop of a device generating loss in the power semiconductor module according to the estimated junction temperature of the power semiconductor module and the current flowing through the power semiconductor module in the current switching period;
and calculating to obtain the conduction loss of the device generating the loss in the power semiconductor module according to the duty ratio of the power semiconductor module, the current flowing through the power semiconductor module and the conduction voltage drop of the device generating the loss in the power semiconductor module in the current switching period.
4. The method for online calculation of the loss of the power semiconductor module according to claim 2, wherein the calculating the switching loss of the device generating the loss in the power semiconductor module according to the switching frequency and the estimated junction temperature of the power semiconductor module in the current switching period, the current flowing through the power semiconductor module, and the dc bus voltage of the circuit in which the power semiconductor module is located includes:
determining switching energy of a device generating loss in the power semiconductor module according to the estimated junction temperature of the power semiconductor module, current flowing through the power semiconductor module and direct current bus voltage of a circuit in which the power semiconductor module is positioned in the current switching period;
and calculating the switching loss of the device generating the loss in the power semiconductor module according to the switching frequency of the power semiconductor module in the current switching period and the switching energy of the device generating the loss in the power semiconductor module.
5. The method for online calculation of losses in a power semiconductor module according to any one of claims 1 to 4, wherein said power semiconductor module comprises: an IGBT chip and a diode chip connected in anti-parallel;
determining a device generating loss in the power semiconductor module according to the current flowing through the power semiconductor module in the current switching period, comprising:
if the current flowing through the power semiconductor module in the current switching period flows from the collector to the emitter of the IGBT chip, determining that a device generating loss in the power semiconductor module is the IGBT chip;
and if the current flowing through the power semiconductor module in the current switching period flows from the emitter to the collector of the IGBT chip, determining that the device generating loss in the power semiconductor module is the diode chip.
6. The method for online calculation of the loss of the power semiconductor module according to claim 5, wherein if the device generating the loss in the power semiconductor module is the IGBT chip, the switching energy of the device generating the loss in the power semiconductor module includes: the on energy and the off energy of the IGBT chip;
if the device generating the loss in the power semiconductor module is the diode chip, the switching energy of the device generating the loss in the power semiconductor module includes: the reverse recovery energy of the diode chip.
7. The on-line junction temperature estimation method for the power semiconductor module is characterized by comprising the following steps of:
the method for on-line calculation of the loss of the power semiconductor module according to any one of claims 1 to 6, obtaining real-time loss power of the power semiconductor module;
building a junction temperature observer according to a thermal impedance model of the power semiconductor module;
and obtaining the estimated junction temperature of the power semiconductor module through the junction temperature observer according to the real-time loss power and the sampling temperature of the negative temperature coefficient component NTC in the power semiconductor module.
8. The method for online estimation of junction temperature of a power semiconductor module according to claim 7, wherein the nodes in the thermal impedance model of the power semiconductor module comprise at least: IGBT chip junction temperature node, diode chip junction temperature node, NTC temperature node and temperature reference node.
9. The method of on-line estimation of junction temperature of a power semiconductor module of claim 8, wherein the nodes in the thermal impedance model of the power semiconductor module further comprise: a temperature node of adjacent power semiconductor modules of the power semiconductor modules;
the thermal impedance model of the power semiconductor module is a three-dimensional thermal network model.
10. The method for online estimation of junction temperature of a power semiconductor module according to any one of claims 7 to 9, further comprising, before constructing a junction temperature observer according to a thermal impedance model of the power semiconductor module:
constructing a thermal impedance model of the power semiconductor module;
and obtaining model parameters of the thermal impedance model of the power semiconductor module by adopting a finite element analysis or experimental mode.
11. The method for online estimation of junction temperature of a power semiconductor module according to any one of claims 7 to 9, wherein constructing a junction temperature observer according to a thermal impedance model of the power semiconductor module comprises:
and taking the temperature of each node in the thermal impedance model as a state variable, taking the loss generated by each node in the thermal impedance model as an input variable, and taking the temperature of the NTC temperature node in the thermal impedance model as an output variable, and building the junction temperature observer.
12. The method for online estimation of junction temperature of a power semiconductor module according to claim 11, wherein the state space equation of the junction temperature observer is:
wherein,is the differentiation of the state variable, x (t) is the state variable of the junction temperature observer, u (t) is the input variable of the junction temperature observer, y (t) is the output variable of the junction temperature observer, A is the system matrix of the junction temperature observer, B is the input matrix of the junction temperature observer, C is the output matrix of the junction temperature observer, L is the feedback matrix of the junction temperature observer, y * (t) is an actual measurement of the junction temperature observer output variable; and:
meanwhile, elements on the diagonal satisfy: />
C＝[1 0 L 0]。
13. The method for online estimation of junction temperature of a power semiconductor module according to claim 12, wherein when the junction temperature observer is an open loop observer, l=0;
when the junction temperature observer is a closed-loop observer, the value of L is obtained by adopting a zero pole allocation method.
14. The method for on-line estimation of junction temperature of power semiconductor module according to claim 12, wherein an operating frequency of the junction temperature observer is equal to or higher than a switching frequency of the power semiconductor module in a current switching cycle.
15. A processor, configured to perform the method for online calculation of losses in a power semiconductor module according to any one of claims 1 to 6 and/or the method for online estimation of junction temperature in a power semiconductor module according to any one of claims 7 to 14.
16. A motor controller comprising the processor of claim 15.
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