CN107025364B - Junction temperature prediction method of IGBT module - Google Patents
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Abstract
The invention discloses a junction temperature prediction method of an IGBT module, which comprises the following steps: 1) calculating an expression of current flowing through the IGBT in the direct-current bipolar short circuit according to the modular multilevel circuit parameters and the running condition before the short circuit; 2) fitting a relational expression of conduction loss, switching energy and current flowing through the IGBT according to an IGBT data manual; 3) judging the switching state of the IGBT according to the equivalent switching frequency and the equivalent duty ratio of the IGBT; 4) calculating a loss value P of the IGBT according to the switching state of the IGBT, the expression of the current flowing through the IGBT when the direct current bipolar is in short circuit, and the relational expression of conduction loss, switching energy and the current flowing through the IGBT; 5) and calculating the IGBT junction temperature distribution value along with time according to the loss value P of the IGBT and a 4-order Foter heat transfer model of the IGBT module. The method is used for predicting the junction temperature change curve of the modular multilevel circuit under different operating conditions when the direct-current bipolar short circuit occurs by calculation. The method provides reference for the design of a main circuit, the design of protection and the design of a heat dissipation loop, and improves the stability of the system.
Description
The technical field is as follows:
the invention belongs to the technical field of power electronics, and particularly relates to a junction temperature prediction method of an IGBT module, which is used for calculating the junction temperature of an IGBT under the condition of a modular multilevel circuit direct current bipolar short circuit.
Background art:
the modular multilevel converter is very suitable for occasions with high voltage and heavy current because of strong expansibility, high output level number and low harmonic content, and has wide application in flexible direct current transmission. The IGBT (insulated gate bipolar transistor) is the most important component in the circuit sub-module, and its normal operation or not greatly affects the operational reliability of the circuit. The failure of the IGBT module is to a large extent an overheating failure under the influence of thermal cycling, and has a direct relationship with its junction temperature. Therefore, it is necessary to predict the IGBT junction temperature by simulating the operating conditions of the system before it is not operating.
Short-circuit faults of modular multilevel circuits are faults with serious consequences, whereas direct-current bipolar short-circuits are the most serious short-circuit situations. The change curve of the IGBT junction temperature under the direct-current bipolar short circuit condition is researched, the thermal failure time and the fault tolerance time of the IGBT under different operating conditions can be obtained, and the method has great significance for main circuit design, protection design and heat dissipation loop design. Most of the existing junction temperature calculation methods are junction temperature calculation methods of IGBTs in PWM converters, and due to the fact that modulation modes of modular multilevel circuits are different, switching behaviors of submodules of the modular multilevel circuits are complex, switching frequency is low, and the modular multilevel circuits cannot be directly applied to the modular multilevel circuits.
The invention content is as follows:
the invention aims to provide a junction temperature prediction method of an IGBT module, which is used for predicting junction temperature change curves of a modular multilevel circuit under different operating conditions when a direct-current bipolar short circuit occurs by calculation. The method provides reference for the design of a main circuit, the design of protection and the design of a heat dissipation loop, and improves the stability of the system.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a junction temperature prediction method of an IGBT module comprises the following steps:
1) calculating an expression of current flowing through the IGBT in the direct-current bipolar short circuit according to the modular multilevel circuit parameters and the running condition before the short circuit;
2) fitting a relational expression of conduction loss, switching energy and current flowing through the IGBT according to an IGBT data manual;
3) judging the switching state of the IGBT according to the equivalent switching frequency and the equivalent duty ratio of the IGBT;
4) calculating a loss value P of the IGBT according to the switching state of the IGBT, the expression of the current flowing through the IGBT when the direct current bipolar is in short circuit, and the relational expression of conduction loss, switching energy and the current flowing through the IGBT;
5) and obtaining a discrete curve of the IGBT junction temperature variation trend along with time in a predicted time period according to the loss value P of the IGBT and a 4-order Foter heat transfer model of the IGBT module.
The further improvement of the invention is that in the step 1), the expression of the current flowing through the IGBT when the direct current bipolar is in short circuit is as follows:
wherein
Wherein, UdcIs a direct current side voltage value, n is half of the number of bridge arm submodules, C0Capacitance value of sub-module capacitor LaFor inductance value, R, of bridge arm valve reactorstL is equivalent resistance value of bridge armLEquivalent inductance value R for DC busLIs the equivalent resistance value, I, of the direct current busLThe inductance current value at the time of failure.
The invention further improves that in the step 2), conduction loss and switching energy and current I flowing through the IGBT are reducedCThe relationship of (A) is as follows:
conduction energy Eon：
Eon＝9.607×10-7IC 2+0.002145IC+0.7643
Off energy Eoff：
Eoff＝0.005189IC+0.1464
Conduction loss PTcon：
VCE＝aIC 2+bIC+c
Junction temperature TjIs a-5.922 × 10 at 25 deg.C-8b＝0.0009071 c＝0.7492
Junction temperature TjIs measured at 125 ℃ under the condition that a is-8.8 × 10-8b＝0.001252 c＝0.8091
Therefore, the coefficients a, b, c depend on the junction temperature TjThe change relationship is
Conduction loss PTcon＝VCEIC＝(aIC 2+bIC+c)IC
Wherein VCEAnd conducting voltage drop for the IGBT.
The further improvement of the invention is that the specific method for calculating the loss value P of the IGBT in the step 4) is as follows:
wherein, tcThe cycle is calculated for the junction temperature.
The further improvement of the invention is that in the step 5), the calculation method of the IGBT junction temperature specifically comprises the following steps:
wherein, tcIs the calculation period, TiIs the temperature difference, T, of the ith order thermal modelfiIs the temperature difference, R, of the last calculation cycle of the ith-order thermal modeliIs the thermal resistance value, C, of the ith order thermal modeliIs the heat capacity value, T, of the ith order thermal modeljIs junction temperature, TaIs the ambient temperature and i is a positive integer.
The invention has the following advantages:
the junction temperature prediction method of the IGBT module is used for calculating the change of the junction temperature of the IGBT when a modular multilevel circuit direct current bipolar short circuit occurs, and calculating the situation based on the direct current bipolar short circuit, wherein the current invention rarely relates to the transient change situation of the junction temperature of the IGBT when the circuit is short-circuited; according to the method, the relation between the loss and the current is fitted by adopting an IGBT data manual, and the loss calculation is based on a conclusion obtained by practice, so that the accuracy and the practical application are realized; according to the invention, the switching state of the IGBT is judged according to the equivalent switching frequency and the equivalent duty ratio of the IGBT, the switching state of the IGBT in the modular multi-level circuit can be simulated approximately, and the switching state is used as a basis for calculating the IGBT loss, so that the calculation is more accurate and fine than other methods; according to the invention, a 4-order Foster heat transfer model is established for the IGBT module by utilizing the heat transfer principle, the heat transfer model has both heat resistance and heat capacity, the heat transfer characteristic of the IGBT module can be fully simulated, the junction temperature transient change trend of the IGBT chip when the modular multilevel circuit is short-circuited can be simulated by solving the model, the precision is higher, no real object is needed, and resources are saved; the method adopted by the invention belongs to the advance simulation of the prediction property, can obtain a result close to the actual result when the short circuit of the circuit does not occur, and can respectively simulate junction temperature change curves under different heat dissipation conditions and under different circuit running states by changing the circuit parameters and the parameters of the IGBT heat transfer model, thereby providing a reference basis for the parameter design of the system, such as heat dissipation and the like; the invention is realized by matlab programming, the algorithm is simple and practical, and the software resource is saved.
Furthermore, the influence of the junction temperature on the conduction loss is considered, so that the error caused by electric-thermal coupling is reduced.
Furthermore, the loss calculation method adopted by the invention is a segmentation method, and because the properties and expressions of different losses of the IGBT switching states are different, the loss of the IGBT is calculated according to the switching states, so that the method is more precise than a common calculation method.
Further, aiming at the problem of low switching frequency of the modular multilevel circuit, in the junction temperature calculation method adopted by the invention, the calculation period is smaller than the switching period of the IGBT, so that junction temperature change in the middle of a single switching period of the IGBT can be simulated.
Description of the drawings:
FIG. 1 is a schematic flow chart of an embodiment of the present invention.
Fig. 2 is a schematic diagram of a modular multilevel circuit main circuit.
Fig. 3 is a schematic diagram illustrating a specific process of calculating the junction temperature in the embodiment of fig. 1.
Fig. 4 is a schematic diagram of a heat transfer model of an IGBT module Foster.
Fig. 5 is a diagram of simulation results of IGBT short-circuit current and junction temperature.
The specific implementation mode is as follows:
the invention is further elucidated below with reference to the figures and examples, without being limited to the examples given.
As shown in fig. 1, the method for predicting junction temperature of an IGBT module provided by the present invention includes the following steps:
the first step is as follows: before the calculation, the parameter values required for the calculation are determined, and in the present invention, the parameters include:
the parameters of the main circuit, as shown in FIG. 2, include the DC side voltage value UdcHalf bridge arm submodule number n and submodule capacitance value C0Bridge arm valve reactor inductor LaBridge arm equivalent resistance RstDc bus equivalent inductor LLSum equivalent resistance RL. The bridge arm equivalent resistance comprises a reactor direct-current resistance, a capacitor series equivalent resistance, a line and device equivalent resistance and the like.
Inductance current value I at fault timeL。
And the junction temperature of the IGBT in the running state is stabilized before the system is short-circuited. This value is the initial value of the junction temperature calculation, i.e., the junction temperature at time t 0. The junction temperature before short circuit fluctuates in actual operation, but the fluctuation range of the junction temperature does not influence the junction temperature calculation greatly, so the initial value in the invention is the average value in steady-state operation.
Simulation step length tsCalculating period t of junction temperaturec. The time interval for calculating the short-circuit current is consistent with the simulation step length, and the time interval for calculating the junction temperature is consistent with the calculation period of the junction temperature. A variable n cal is defined, meaning that the junction temperature is calculated every n cal simulation cycles.
Switching frequency f, duty cycle D. The switching state of the modularized multi-level circuit device is determined by various factors and is a random nonlinear process, so that the switching state is determined by adopting a fixed period and a duty ratio after the switching frequency and the duty ratio are obtained. The related parameters also include the number n _ switch of junction temperature calculation cycles in a switching cycle, and the number n _ on of the junction temperature calculation cycles of switch conduction in a switching cycle.
And the thermal capacity and thermal resistance parameters of a 5-order Foster model of the IGBT are used. In the present embodiment, a 5-order model is adopted, but the model adopted in the present invention is not limited to 5-order, depending on the situation.
On-state characteristics of the IGBTs at 25 degrees celsius and 125 degrees celsius, and switching energy characteristics.
The second step is that: and calculating the short-circuit current under the condition of direct-current bipolar short circuit.
The invention adopts a short-circuit current calculation formula as follows:
wherein
Wherein, UdcIs a direct current side voltage value, n is half of the number of bridge arm submodules, C0Capacitance value of sub-module capacitor LaFor inductance value, R, of bridge arm valve reactorstL is equivalent resistance value of bridge armLEquivalent inductance value R for DC busLIs the equivalent resistance value, I, of the direct current busLThe inductance current value at the time of failure.
The parameters used in this example take values as shown in table 1:
TABLE 1 main circuit parameter values
| Udc/V | 100000 | n/n is | 100 |
| C0/F | 0.01 | La/H | 0.01 |
| Rst/Ω | 0.01 | LL/H | 0.015 |
| RL/Ω | 0.005 | IL/A | 1000 |
The third step: the loss coefficients were fitted according to the characteristic curves in the chip data manual. For the on-state saturation voltage drop V in this embodimentCEAnd a current I flowing through the IGBTCThe relationship of (1) adopts quadratic fitting; turn-on energy E of IGBTonTurn-off energy E of IGBT by quadratic fittingoffA one-time fit is used. The expression is as follows:
v at 25 DEG CCE＝-5.922×10-8IC 2+0.0009071IC+0.7492
V at 125 DEG CCE＝-8.8×10-8IC 2+0.001252IC+0.8091
Eon＝9.607×10-7IC 2+0.002145IC+0.7643，Eoff＝0.005189IC+0.1464
The fourth step: and judging the IGBT switching state in the current calculation period and calculating the loss according to the corresponding state.
In the invention, n _ switch junction temperature calculation cycles exist in one switching cycle, wherein:
(1) the 1 st calculation period is that the switching tube is switched on, and the loss is switching-on loss Pon，Pon＝Eon/tc。
(2) The switching tubes in the 2 nd to the n _ on-1 th calculation periods are in a conduction state, and the loss is conduction loss PTcon，PTcon＝VCEIC。
VCEBy fitting according to ICThe value was obtained. The invention considers junction temperature vs. saturation voltage drop VCEThe fitting coefficient is corrected according to the temperature value at the last moment, and the formula is as follows:
conduction loss PTcon＝VCEIC＝(aIC 2+bIC+c)IC
Junction temperature TjIs a-5.922 × 10 at 25 deg.C-8b＝0.0009071 c＝0.7492
Junction temperature TjIs measured at 125 ℃ under the condition that a is-8.8 × 10-8b＝0.001252 c＝0.8091
Therefore, the coefficients a, b, c depend on the junction temperature TjThe change relationship is
The instantaneous loss value P of each simulation stepTcon＝VCEIC. And taking the average value of the loss of each simulation time point as the average loss of the calculation period.
(3) The switching tube is turned off in the n _ on calculation period, and the loss is turn-off loss Poff，Poff＝Eoff/tc。
(4) The switching tube is in a cut-off state in the rest calculation period in the switching period, and the loss is considered to be zero.
The calculation period equivalence in the loss calculation is selected as follows:
the calculation period is 10 mus, the equivalent switching period is 1ms, and the equivalent duty ratio is 0.1.
The fourth step: the junction temperature is calculated from the loss and heat transfer models. As shown in fig. 3, the junction temperature calculation process adopted by the present invention is discrete, and the calculation formula is:
as shown in FIG. 4, P is the current calculated cycle loss, tcIs the calculation period, TiIs the temperature difference, T, of the ith order thermal modelfiIs the temperature difference, R, of the last calculation cycle of the ith-order thermal modeliIs the thermal resistance value, C, of the ith order thermal modeliIs the heat capacity value, T, of the ith order thermal modeljIs junction temperature, TaIs the ambient temperature.
The values of the parameters of each order of the Foster model in the embodiment are shown in Table 2:
TABLE 2Foster model values of parameters of each order
| R1/(℃/W) | 1.2 | C1/(J/kg·K) | 5.2944 |
| R2/(℃/W) | 1.49 | C2/(J/kg·K) | 37.29 |
| R3/(℃/W) | 0.269 | C3/(J/kg·K) | 45.59 |
| R4/(℃/W) | 0.246 | C4/(J/kg·K) | 1.254 |
The variation curve of the junction temperature of the IGBT can be obtained, and the result is shown in fig. 5.
The embodiment can flexibly select parameters such as simulation step length, junction temperature calculation period and the like; the relation between loss and current is fitted by using an IGBT data manual, so that the loss calculation is more accurate and closer to practical application; the influence of junction temperature on conduction loss is considered, and errors caused by electrothermal coupling are avoided.
Claims (1)
1. A junction temperature prediction method of an IGBT module is characterized by comprising the following steps:
1) obtaining an expression of current flowing through the IGBT in the direct current bipolar short circuit according to the modular multilevel circuit parameters and the running condition before the short circuit; the expression of the current flowing through the IGBT in the case of a dc bipolar short circuit is as follows:
wherein
Wherein, UdcIs a direct current side voltage value, n is half of the number of bridge arm submodules, C0Capacitance value of sub-module capacitor LaFor inductance value, R, of bridge arm valve reactorstL is equivalent resistance value of bridge armLEquivalent inductance value R for DC busLIs the equivalent resistance value, I, of the direct current busLThe value of the inductance current at the time of the fault;
2) fitting a relational expression of conduction loss, switching energy and current flowing through the IGBT according to an IGBT data manual; conduction loss, switching energy and current I flowing through IGBTCThe relationship of (A) is as follows:
conduction energy Eon：
Eon＝9.607×10-7IC 2+0.002145IC+0.7643
Off energy Eoff：
Eoff＝0.005189IC+0.1464
Conduction loss PTcon：
VCE＝aIC 2+bIC+c
Junction temperature TjIs a-5.922 × 10 at 25 deg.C-8b＝0.0009071 c＝0.7492
Junction temperature TjIs measured at 125 ℃ under the condition that a is-8.8 × 10-8b＝0.001252 c＝0.8091
Therefore, the coefficients a, b, c depend on the junction temperature TjThe change relationship is
Conduction loss PTcon＝VCEIC＝(aIC 2+bIC+c)IC
Wherein VCEConducting voltage drop for IGBT;
3) judging the switching state of the IGBT according to the equivalent switching frequency and the equivalent duty ratio of the IGBT;
4) calculating a loss value P of the IGBT according to the switching state of the IGBT, the expression of the current flowing through the IGBT when the direct current bipolar is in short circuit, and the relational expression of conduction loss, switching energy and the current flowing through the IGBT; the specific method for calculating the loss value P of the IGBT is as follows:
wherein, tcCalculating a cycle for the junction temperature;
5) obtaining a discrete curve of the IGBT junction temperature variation trend along with time in a predicted time period according to the loss value P of the IGBT and a 4-order Foster heat transfer model of the IGBT module, wherein the IGBT junction temperature calculation method specifically comprises the following steps:
wherein, tcIs the calculation period, TiIs the temperature difference, T, of the ith order thermal modelfiIs the temperature difference, R, of the last calculation cycle of the ith-order thermal modeliIs the thermal resistance value, C, of the ith order thermal modeliIs the heat capacity value, T, of the ith order thermal modeljIs junction temperature, TaIs the ambient temperature and i is a positive integer.
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