CN113435151B - System and method for predicting IGBT junction temperature in operation process - Google Patents
System and method for predicting IGBT junction temperature in operation process Download PDFInfo
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Abstract
The invention provides a prediction system and a method for IGBT junction temperature in an operation process, comprising the following steps: step 1, respectively calculating the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be tested; step 2, calculating a relation diagram of the surface temperature of the radiator of the IGBT and the junction temperature of the module under different environmental temperatures according to the junction temperature of the module, the temperature of the shell of the module and the surface temperature of the radiator obtained in the step 1; step 3, performing linear fitting on the relation diagram obtained in the step 2 to obtain a junction temperature prediction formula; step 4, predicting the junction temperature of the IGBT to be detected according to the junction temperature prediction formula obtained in the step 3; the method solves the defect that the junction temperature of the IGBT after the encapsulation is finished can not be measured.
Description
Technical Field
The invention relates to industrial IGBT junction temperature prediction and provides a prediction system and method for IGBT junction temperature in an operation process.
Background
As a main component of the power frequency converter, the IGBT module is repeatedly turned on or off in daily work, and is subject to repeated effects of thermal shock for a long time, so that failure or fatigue effect is easily generated, and the actual state and the working life thereof affect the normal operation of the whole frequency converter device or the wind energy-electric energy conversion system. It is counted that among common faults, about more than 2 fault types are IGBT module failures. Because the IGBT faults occur on a short time scale, usually on the order of mu s, the faults are removed by adopting a replacement mode after the faults occur. Therefore, the practical significance of the maintenance plan after the fault is studied is not great; a more targeted approach is to predict future trends of the module.
The junction temperature of the IGBT module is a key factor for causing the failure of the power device, the measurement mode is single, the junction temperature of the IGBT module which is not molded can be measured, and the junction temperature of the molded IGBT module is difficult to measure. Therefore, it is necessary to construct a junction temperature model using other non-invasive measurement parameters to realize IGBT junction temperature prediction.
Disclosure of Invention
The invention aims to provide a prediction system and method for IGBT junction temperature in an operation process, which solve the defect that the IGBT junction temperature in the operation process cannot be measured in the prior art.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the invention provides a method for predicting IGBT junction temperature in an operation process, which comprises the following steps:
step 1, respectively calculating the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be tested;
step 2, calculating a relation diagram of the surface temperature of the radiator of the IGBT and the junction temperature of the module under different environmental temperatures according to the junction temperature of the module, the temperature of the shell of the module and the surface temperature of the radiator obtained in the step 1;
step 3, performing linear fitting on the relation diagram obtained in the step 2 to obtain a junction temperature prediction formula;
and 4, predicting the junction temperature of the IGBT to be detected according to the junction temperature prediction formula obtained in the step 3.
Preferably, in step 1, the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be measured are calculated respectively, and the specific method is:
establishing an equivalent circuit of the IGBT according to the heat conduction characteristic of the IGBT to be tested;
respectively constructing a module junction temperature calculation model, a module shell temperature calculation model and a radiator surface temperature calculation model of the IGBT to be tested according to the obtained equivalent circuit;
and respectively calculating the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be measured according to the module junction temperature calculation model, the module shell temperature calculation model and the radiator surface temperature calculation model.
Preferably, the expression of the module junction temperature calculation model is:
T j ＝P T ×[R th(j-c) +R th(c-f) +R th(f-a) ]+T a ；
the module shell temperature calculation model is as follows:
T c ＝P T ×[R th(c-f) +R th(f-a) ]+T a ；
the radiator surface temperature calculation model is as follows:
T f ＝P T ×R th(f-a) +T a ；
wherein P is T Losses generated for IGBTs; t (T) j The junction temperature of the module is; t (T) c The module housing temperature; t (T) f Is the radiator surface temperature; t (T) a Is ambient temperature; r is R th(j-c) Is the thermal resistance between the junction and the shell; r is R th(c-f) Is the thermal resistance between the housing and the heat sink; r is R th(f-a) Is the heat sink-external thermal resistance.
Preferably, the thermal resistance R between the junction and the housing th(j-c) Calculated by the following formula:
Δt＝1/2f
wherein r is n T is the resistance value of each layer in the thermal resistance Foster model between the IGBT junction and the shell; c n T is the capacitance value of each layer in the IGBT junction-housing thermal resistance Foster model, n=1, 2,3,4; Δt is the duration of the loss; f is the frequency of operation of the frequency converter.
Preferably, the thermal resistance R between the housing and the heat sink th(c-f) Calculated by the following formula:
Δt＝1/2f
wherein r is 5 The resistance value of the thermal resistance Foster model of the IGBT shell-radiator is obtained; c 5 The capacitance value in a thermal resistance Foster model of the IGBT shell-radiator; Δt is the duration of the loss; f is the frequency of operation of the frequency converter.
Preferably, the heat sink-external thermal resistance R th(f-a) Calculated by the following formula:
Δt＝1/2f
wherein r is 6 The resistance value of the Foster model is the external thermal resistance of the IGBT radiator; c 6 The capacitance value in the thermal resistance Foster model outside the IGBT radiator; Δt is the duration of the loss; f is the frequency of operation of the frequency converter.
Preferably, the loss P generated by IGBT T Calculated by the following formula:
P T ＝P sat +P on +P off
wherein P is sat Is steady state loss, P on P is the conduction loss off Is the turn-off loss.
Preferably, in step 2, according to the module junction temperature, the module shell temperature and the surface temperature of the radiator obtained in step 1, a relationship diagram between the surface temperature of the radiator and the module junction temperature of the IGBT under different environmental temperatures is calculated, and the specific method is as follows:
s201, setting an ambient temperature T a Setting the power factor to be 0.95 at 25 ℃; setting the simulation power as 0, 0.2, 0.4, 0.6, 0.8 and 1 of rated power values respectively;
s202, calculating and obtaining the module junction temperature T of the IGBT under the test condition of each current value j Module case temperature T c And radiator surface temperature T f ；
S203, according to the module junction temperature T of the IGBT under each current value test condition j Module case temperature T c And radiator surface temperature T f Obtaining the relations among the maximum module junction temperature value, the minimum module junction temperature value, the module shell temperature, the radiator surface temperature and the environment temperature respectively under each cycle period steady state;
s204, repeating S202 and S203 to obtain the relationship among the maximum module junction temperature, the minimum module junction temperature, the module shell temperature, the radiator surface temperature and the environment temperature under the different set environment temperature conditions;
s205, constructing and obtaining a relation diagram between the surface temperature of the radiator and the junction temperature of the module under different environment temperatures according to the relation among the maximum value of the junction temperature of the module, the minimum value of the junction temperature of the module, the temperature of the shell of the module, the surface temperature of the radiator and the environment temperature under different set environment temperature conditions.
Preferably, in step 3, the junction temperature prediction formula obtained is as follows:
T j ＝1.345×T f -0.352×T a
wherein T is j For the module junction temperature T f Is the radiator surface temperature; t (T) a Is ambient temperature.
A system for predicting IGBT junction temperature during operation, the system capable of operating the method comprising:
the temperature calculation module is used for calculating the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be measured respectively;
the temperature comparison module is used for calculating and obtaining a relation diagram of the surface temperature of the radiator and the junction temperature of the module under different environment temperatures according to the obtained junction temperature of the module, the temperature of the shell of the module and the surface temperature of the radiator;
the fitting module is used for carrying out linear fitting on the obtained relation diagram to obtain a junction temperature prediction formula;
and the prediction module is used for predicting the junction temperature of the IGBT to be detected according to the obtained junction temperature prediction formula.
Compared with the prior art, the invention has the beneficial effects that:
according to the method for predicting the IGBT junction temperature in the operation process, provided by the invention, the heat transfer path and the heat dissipation condition of the IGBT are mathematically modeled by monitoring the external temperature and the ambient temperature of the module, the thermal parameter network construction of the thermal resistance-heat capacity is completed, and the predicted value of the IGBT junction temperature is calculated and obtained according to the relation fitting of the external temperature of the module, the ambient temperature and the module junction temperature.
Drawings
FIG. 1 is a flow chart of the invention;
FIG. 2 is an IGBT block diagram and an equivalent circuit diagram;
FIG. 3 is an equivalent circuit of the thermal resistance of an IGBT module;
FIG. 4 is a circuit diagram of a thermal resistance Foster model between the IGBT junction and the housing;
FIG. 5 is a circuit diagram of a thermal resistance Foster model of a housing-heat sink;
FIG. 6 is a circuit diagram of a heat sink-external thermal resistance Foster model;
FIG. 7 is a graph showing the relationship between junction temperature, shell temperature, external temperature, and ambient temperature (ambient temperature 25 ℃ C.) under different power conditions;
FIG. 8 is a graph showing the relationship between junction temperature maximum, external temperature and ambient temperature for different power conditions;
FIG. 9 is a graph showing the relationship between the maximum junction temperature and the module temperature in different environments.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The invention provides a prediction model of IGBT junction temperature in the running process, which selects Fuji company 2MBI600XHA120-50 type IGBT as a research modeling object, and a module diagram and an equivalent circuit diagram thereof are shown in figure 2.
The flow chart of the invention is shown in fig. 1, and specifically comprises the following steps:
step 1, referring to the device manual, in combination with the heat conduction characteristics of the semiconductor, an equivalent circuit of IGBT thermal resistance is established, as shown in FIG. 3, wherein P T Losses generated for IGBTs; t (T) j The junction temperature of the module is; t (T) c The module housing temperature; t (T) f Is the radiator surface temperature; t (T) a Is ambient temperature; r is R th(j-c) Is the thermal resistance between the junction and the shell; r is R th(c-f) Is the thermal resistance between the housing and the heat sink; r is R th(f-a) Is the heat sink-external thermal resistance.
Through the equivalent circuit, a module junction temperature calculation model, a module shell temperature calculation model and a radiator surface temperature calculation model are respectively constructed, wherein the module junction temperature calculation model is as follows:
T j ＝P T ×[R th(j-c) +R th(c-f) +R th(f-a) ]+T a
the module shell temperature calculation model is as follows:
T c ＝P T ×[R th(c-f) +R th(f-a) ]+T a ；
the radiator surface temperature calculation model is as follows:
T f ＝P T ×R th(f-a) +T a ；
step 2, a thermal resistance Foster model between the IGBT junction and the shell shown in fig. 4 is established, and the thermal resistance Foster model is calculated according to the following formula:
Δt＝1/2f
wherein r is n T is the resistance value of each layer in the thermal resistance Foster model between the IGBT junction and the shell; c n T is the capacitance value of each layer in the IGBT junction-housing thermal resistance Foster model, n=1, 2,3,4; Δt is the duration of the loss; f is the frequency of operation of the frequency converter.
The thermal resistance Foster model of the IGBT inter-housing-radiator shown in FIG. 5 is established, and is calculated according to the following formula:
wherein r is 5 The resistance value of the thermal resistance Foster model of the IGBT shell-radiator is obtained; c 5 Is the capacitance value in the thermal resistance Foster model of the IGBT inter-housing-radiator.
An IGBT was built as shown in fig. 6-a radiator-external thermal resistance Foster model, calculated according to the following formula:
wherein r is 6 The resistance value of the Foster model is the external thermal resistance of the IGBT radiator; c 6 Is the capacitance in the IGBT heat sink-external thermal resistance Foster model.
Step 3, establishing an IGBT loss calculation model; wherein the IGBT loss algorithm is as follows:
P T ＝P sat +P on +P off
wherein P is sat Is steady state loss, P on P is the conduction loss off For turn-off loss, P T The total loss of the IGBT is; p (P) sat 、P on And P off Reference is made to a manual for the calculation mode;
step 4, calculating R according to the step 2 th(c-f) 0.0125 ℃/W; r is R th(fa) 0.02 ℃/W; setting simulation conditions, i.e. setting ambient temperature T a Setting the power factor to be 0.95 at 25 ℃; setting the simulation power as 0, 0.2, 0.4, 0.6, 0.8 and 1 of rated power values respectively;
under the test condition of obtaining each current value by calculation, the module junction temperature T of the IGBT j Module case temperature T c And radiator surface temperature T f 。
And 5, calculating according to the conditions set in the step 4 and the formulas in the previous steps to obtain the relations (25 ℃) between the maximum module junction temperature, the minimum module junction temperature, the module shell temperature and the radiator surface temperature and the environment temperature respectively in each cycle period steady state, wherein the relations are shown in fig. 7.
And 6, repeating the step 4 and the step 5 to obtain the relationship among the maximum module junction temperature, the minimum module junction temperature, the module shell temperature, the surface temperature of the radiator and the environmental temperature under the different set environmental temperature conditions, wherein the relationship is shown in fig. 8.
And 7, constructing and obtaining a relation diagram between the surface temperature of the radiator and the junction temperature of the module under different environment temperatures according to the result obtained in the step 6, wherein the relation diagram is shown in fig. 9.
Step 8, performing linear fitting on the relation diagram obtained in the step 7 to obtain a junction temperature prediction formula:
T j ＝1.345×T f -0.352×T a
and 9, predicting the junction temperature of the IGBT to be detected according to the prediction formula obtained in the step 8.
The working principle of the invention is as follows:
the IGBT is used as the most critical power device in the frequency converter system, and the thermal stability of the work of the IGBT becomes the key for evaluating the performance of the system. There is a need for intensive research into the process and effects of heat transfer under different conditions. However, the temperature sensor cannot be installed inside the repackaged IGBT, so that the temperature of the IGBT junction temperature cannot be directly measured. Currently, the IGBT junction temperature is basically accepted in the industry to predict by establishing a "thermal model". The prediction method provided by the scheme can be used for engineering, the heat transfer path and the heat dissipation condition of the IGBT are mathematically modeled by monitoring the external temperature and the ambient temperature of the module, the thermal parameter network construction of the thermal resistance-heat capacity is completed, and the prediction value of the junction temperature of the IGBT is calculated and obtained according to the relation fitting of the external temperature of the module, the ambient temperature and the junction temperature of the module.
Claims (8)
1. The method for predicting the junction temperature of the IGBT in the operation process is characterized by comprising the following steps of:
step 1, respectively calculating the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be tested;
step 2, calculating a relation diagram of the surface temperature of the radiator of the IGBT and the junction temperature of the module under different environmental temperatures according to the junction temperature of the module, the temperature of the shell of the module and the surface temperature of the radiator obtained in the step 1;
step 3, performing linear fitting on the relation diagram obtained in the step 2 to obtain a junction temperature prediction formula;
step 4, predicting the junction temperature of the IGBT to be detected according to the junction temperature prediction formula obtained in the step 3;
in step 2, according to the module junction temperature, the module shell temperature and the radiator surface temperature obtained in step 1, calculating to obtain a relation diagram of the radiator surface temperature and the module junction temperature of the IGBT under different environment temperatures, wherein the specific method comprises the following steps:
s201, setting an ambient temperature T a Setting the power factor to be 0.95 at 25 ℃; setting the simulation power as 0, 0.2, 0.4, 0.6, 0.8 and 1 of rated power values respectively;
s202, calculating and obtaining the module junction temperature T of the IGBT under the test condition of each current value j Module case temperature T c And radiator surface temperature T f ；
S203, according to the module junction temperature T of the IGBT under each current value test condition j Module case temperature T c And radiator surface temperature T f Obtaining the relations among the maximum module junction temperature value, the minimum module junction temperature value, the module shell temperature, the radiator surface temperature and the environment temperature respectively under each cycle period steady state;
s204, repeating S202 and S203 to obtain the relationship among the maximum module junction temperature, the minimum module junction temperature, the module shell temperature, the radiator surface temperature and the environment temperature under the different set environment temperature conditions;
s205, constructing and obtaining a relation diagram between the surface temperature of the radiator and the junction temperature of the module under different environment temperatures according to the relation among the maximum value of the junction temperature of the module, the minimum value of the junction temperature of the module, the temperature of the shell of the module, the surface temperature of the radiator and the environment temperature under different set environment temperature conditions;
in step 3, the obtained junction temperature prediction formula is as follows:
T j ＝1.345×T f -0.352×T a
wherein T is j For the module junction temperature T f Is the radiator surface temperature; t (T) a Is ambient temperature.
2. The method for predicting the junction temperature of the IGBT in the operation process according to claim 1, wherein step 1, respectively calculating the module junction temperature, the module case temperature and the radiator surface temperature of the IGBT to be measured, comprises the following specific steps:
establishing an equivalent circuit of the IGBT according to the heat conduction characteristic of the IGBT to be tested;
respectively constructing a module junction temperature calculation model, a module shell temperature calculation model and a radiator surface temperature calculation model of the IGBT to be tested according to the obtained equivalent circuit;
and respectively calculating the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be measured according to the module junction temperature calculation model, the module shell temperature calculation model and the radiator surface temperature calculation model.
3. The method for predicting the junction temperature of an IGBT in an operation according to claim 2, wherein the expression of the module junction temperature calculation model is:
T j ＝P T ×[R th(j-c) +R th(c-f) +R th(f-a) ]+T a ；
the module shell temperature calculation model is as follows:
T c ＝P T ×[R th(c-f) +R th(f-a) ]+T a ；
the radiator surface temperature calculation model is as follows:
T f ＝P T ×R th(f-a) +T a ；
wherein P is T Losses generated for IGBTs; t (T) j The junction temperature of the module is; t (T) c The module housing temperature; t (T) f Is the radiator surface temperature; t (T) a Is ambient temperature; r is R th(j-c) Is the thermal resistance between the junction and the shell; r is R th(c-f) Is the thermal resistance between the housing and the heat sink; r is R th(f-a) Is the heat sink-external thermal resistance.
4. A method for predicting the junction temperature of an IGBT during operation as claimed in claim 3, wherein the junction-to-housing thermal resistance R th(j-c) Calculated by the following formula:
Δt＝1/2f
wherein r is n T is the resistance value of each layer in the thermal resistance Foster model between the IGBT junction and the shell; c n T is the capacitance value of each layer in the IGBT junction-housing thermal resistance Foster model, n=1, 2,3,4; Δt is the duration of the loss; f is the frequency of operation of the frequency converter.
5. A method for predicting IGBT junction temperature during operation as claimed in claim 3, wherein the thermal resistance R between the housing and the heat sink th(c-f) Calculated by the following formula:
Δt＝1/2f
wherein r is 5 The resistance value of the thermal resistance Foster model of the IGBT shell-radiator is obtained; c 5 The capacitance value in a thermal resistance Foster model of the IGBT shell-radiator; Δt is the duration of the loss; f is the frequency of operation of the frequency converter.
6. A method for predicting IGBT junction temperature during operation as claimed in claim 3, wherein the heat sink-external thermal resistance R th(f-a) Calculated by the following formula:
Δt＝1/2f
wherein r is 6 The resistance value of the Foster model is the external thermal resistance of the IGBT radiator; c 6 The capacitance value in the thermal resistance Foster model outside the IGBT radiator; Δt is the duration of the loss; f is the frequency of operation of the frequency converter.
7. A method for predicting the junction temperature of an IGBT during operation as claimed in claim 3, wherein the IGBT generates a loss P T Calculated by the following formula:
P T ＝P sat +P on +P off
wherein P is sat Is steady state loss, P on P is the conduction loss off Is the turn-off loss.
8. A system for predicting IGBT junction temperature during operation, the system being capable of operating the method of any one of claims 1 to 7, comprising:
the temperature calculation module is used for calculating the module junction temperature, the module shell temperature and the radiator surface temperature of the IGBT to be measured respectively;
the temperature comparison module is used for calculating and obtaining a relation diagram of the surface temperature of the radiator and the junction temperature of the module under different environment temperatures according to the obtained junction temperature of the module, the temperature of the shell of the module and the surface temperature of the radiator;
the fitting module is used for carrying out linear fitting on the obtained relation diagram to obtain a junction temperature prediction formula;
and the prediction module is used for predicting the junction temperature of the IGBT to be detected according to the obtained junction temperature prediction formula.
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| CN106443400A (en) * | 2016-09-14 | 2017-02-22 | 河北工业大学 | Electric-heat-aging junction temperature calculation model establishing method of IGBT module |
| CN109871591A (en) * | 2019-01-24 | 2019-06-11 | 武汉大学 | A kind of method of IGBT power module estimation on line junction temperature |
| CN112487651A (en) * | 2020-12-07 | 2021-03-12 | 广东电网有限责任公司江门供电局 | Method for detecting service life of power device of photovoltaic converter |
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| US7356441B2 (en) * | 2005-09-28 | 2008-04-08 | Rockwell Automation Technologies, Inc. | Junction temperature prediction method and apparatus for use in a power conversion module |
| CN107025364B (en) * | 2017-05-12 | 2020-07-28 | 西安交通大学 | Junction temperature prediction method of IGBT module |
| CN107944209A (en) * | 2017-11-13 | 2018-04-20 | 河海大学常州校区 | A kind of method for calculating photovoltaic DC-to-AC converter component IGBT operating temperatures |
| CN108072821B (en) * | 2017-12-06 | 2018-11-16 | 南京埃斯顿自动控制技术有限公司 | The real-time online prediction technique of semiconductor power device dynamic junction temperature |
| CN113050724B (en) * | 2021-03-24 | 2021-10-15 | 株洲中车时代电气股份有限公司 | Train traction control method and system based on IGBT device operation real-time junction temperature |
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| CN106443400A (en) * | 2016-09-14 | 2017-02-22 | 河北工业大学 | Electric-heat-aging junction temperature calculation model establishing method of IGBT module |
| CN109871591A (en) * | 2019-01-24 | 2019-06-11 | 武汉大学 | A kind of method of IGBT power module estimation on line junction temperature |
| CN112487651A (en) * | 2020-12-07 | 2021-03-12 | 广东电网有限责任公司江门供电局 | Method for detecting service life of power device of photovoltaic converter |
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