CN112487651A - Method for detecting service life of power device of photovoltaic converter - Google Patents
Method for detecting service life of power device of photovoltaic converter Download PDFInfo
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Abstract
The invention relates to the field of power devices of photovoltaic power converters, in particular to a service life detection method of a power device of a photovoltaic converter. The method comprises the steps of building an MATLAB/Simulink simulation model of a photovoltaic Boost converter with an MPPT function, combining changes of air temperature and irradiance of a photovoltaic system and a transient process of heat capacity of a power module to predict the service life, combining influence variables of an annual junction temperature curve (large load) and a minute junction temperature curve (small load) according to an actual operation condition in a year period, using a method of repeated iterative calculation, counting the number of times of circulation of each load by adopting a rain flow counting method, calculating the number of times corresponding to the time when each load circulates to the power module to fail, calculating the fatigue damage degree of the power module by using a Miner model, and improving the speed and the accuracy of IGBT service life prediction.
Description
Technical Field
The invention relates to the field of power devices of photovoltaic power converters, in particular to a service life detection method of a power device of a photovoltaic converter.
Background
The IGBT power device is widely applied to various power electronic devices. When the IGBT works, its turn-on, turn-off, turn-on, and the like processes cause temperature rise and thermal stress deformation. When operating for a long period of time, the IGBT can experience failure or fatigue effects under the constantly repeated action of temperature changes. The converter power device plays an important role in an independent photovoltaic power generation system, and according to statistics of actual use conditions, a power device fault is one of important reasons causing failure of the power generation system, and the prediction of the service life of the power device is significant. The existing method for predicting the service life of the power device aims at a fixed working condition, and a photovoltaic system has great change along with the conditions of climate, sunshine and the like, so that the change influences the service life of the power device to a certain extent.
The chinese patent publication No. CN108037440B discloses an on-line monitoring method for sub-module IGBTs of a flexible dc transmission modular multilevel converter, which evaluates the remaining service life and aging degree of each IGBT in a bridge arm of the modular multilevel converter by the percentage increase a of the on-state resistance RCE of each IGBT in the bridge arm of the modular multilevel converter, thereby realizing the on-line monitoring for monitoring the IGBTs in the modular multilevel converter. However, the method for online monitoring cannot predict the service life of the equipment in advance, the online monitoring cost is high in practical use, and the problems that the cost is too high and the service life of the equipment cannot be predicted in advance, which causes large-scale faults of the power system, are easily caused when a large number of omnibearing devices are monitored.
Disclosure of Invention
The invention provides a method for detecting the service life of a photovoltaic converter power device, which aims to solve the problem that the service life of the converter power device cannot be predicted in advance in the prior art and comprises the following steps:
s1: constructing an MATLAB/Simulink simulation model of the photovoltaic Boost converter with the MPPT function;
s2: dividing time scales according to the time constant, and establishing electric heating models of the power modules under different time scales;
s3: and establishing a service life prediction model according to the electric heating model and based on the failure mode of the fatigue of the welding layer, and predicting the service life of the IGBT by adopting a coffee-Manson-Arrhenius model.
The technology predicts the service life of the power device aiming at the actual working condition of the power device of the photovoltaic converter, combines the influence variables of an annual junction temperature curve (large load) and a minute junction temperature curve (small load) according to the actual operating condition in one year period, predicts the service life of the power device by adopting a multi-time scale method, and improves the speed and the accuracy of service life prediction.
Preferably, the step S2 includes analyzing thermal cycling of the IGBT power module on a small time scale and on a large time scale. In the technical scheme, when the service life of a power device of a converter in a photovoltaic power generation system under actual working conditions is predicted, the influence of irradiance and air temperature change and the influence of a heat capacity transient process are considered, namely, a large load and a small load are considered.
Preferably, in S2, analyzing the thermal cycle of the IGBT power module on a small time scale mainly includes the following steps:
s 21: building an IGBT power loss model and a thermal model for 1-3 minutes of simulation operation in MATLAB/simulink;
s 22: combining the power loss model and the thermal model to obtain an electrothermal model of the IGBT module in a small time scale;
s 23: and (5) performing operation simulation for 1-3 min by using the electrothermal model in the step s 22.
Preferably, in S2, analyzing the thermal cycle of the IGBT power module on a large time scale mainly includes the following steps:
s 201: building an IGBT power loss model and a thermal model for simulating 1-3 years of actual working condition operation in MATLAB/simulink;
s 202: setting a state every 30 minutes within 1-3 years, wherein 17520-52560 states are provided in total, and according to the fact that the series of states are all stable operation states, collecting a group of data of illumination intensity and temperature in each state to serve as input parameters of a photovoltaic array, and obtaining average values of input current, output voltage and input voltage of a Boost converter in the state through simulation;
s 203: calculating the average value of the switching loss and the conduction loss of the IGBT and the diode in the corresponding state by using a formula;
s 204: after calculating the power loss, use the thermal resistance RthCalculating the temperature in a stable operation state;
s 205: and calculating the junction temperature and the power loss in a certain state by using a method of repeated iterative calculation.
Preferably, in the step S2, the power loss model: and (3) making a lookup table according to an output characteristic curve of the IGBT, a switching loss curve of the IGBT, a forward bias characteristic curve of the diode and a switching loss curve of the diode on an IGBT module device manual, inputting corresponding real-time parameters of the IGBT module in the photovoltaic Boost converter during working operation into the lookup table, and calculating to obtain the real-time power loss.
Preferably, the thermal model: and fitting a fourth-order Foster thermal network model to obtain the junction temperature of the IGBT module, wherein the thermal resistance in the Foster model is extracted according to a thermal impedance characteristic curve on an element manual.
Preferably, in step s203, the calculation formula is:
wherein psw (t) is the switching loss of the IGBT, and psw (t) ═ pon (t) + poff (t); dc (T) is a duty ratio of the IGBT, and dc (T) ton/T1-Vin/Vout; psw (d) is the switching loss of the diode, and psw (d) poff (d); dc (d) is the duty cycle of the diode, and dc (d) is 1-dc (t); iin is input current; vout is the output voltage; tj is the junction temperature; fsw is the switching frequency; TCv and TCr are temperature coefficients of the forward conduction characteristic curves. In the present technical solution, TCv and TCr are temperature coefficients of the forward conduction characteristic curve, and are calculated from data of 25 ℃ and the hottest temperature, for example:
iref, Vref and Tref are reference parameters of current, voltage and junction temperature of switching loss respectively given by a device data manual; ki is an exponential parameter of switching loss changing with current, and is usually about 1 for an IGBT and about 0.6 for a diode; kv is an exponential coefficient of switching loss changing with voltage, and is about 1.3-1.4 for an IGBT and about 0.6 for a diode; TCEsw is the temperature coefficient of IGBT switching loss, and is about 0.003/K; TCErr is the temperature coefficient of the diode switching losses, which is about 0.006/K.
Preferably, in said step s204,
the junction temperature of the IGBT is Tj(T)＝Ptot(T)·Rth(j-s)(T)+(Ptot(T)+Ptot(D))·Rth(s-a)+Ta
The junction temperature of the diode is Tj(D)＝Ptot(D)·Rth(j-s)(D)+(Ptot(T)+Ptot(D))·Rth(s-a)+Ta
Wherein, Ptot(T)For power loss of IGBT, Ptot(D)Is the power loss of the diode; rth(j-s)(T)Is the thermal resistance between the IGBT junction layer and the radiator, Rth(j-s)(D)Is the thermal resistance between the diode junction layer and the heat sink, Rth(s-a)Is the thermal resistance between the heat sink and the environment; t isaIs ambient temperature.
Preferably, step s205 is mainly: for theOne of the stable operation states is that the junction temperature T of the last state is calculatedj(k-1)Power loss value P of IGBT module undertot(k-1)Combining the power loss value of the IGBT module with the thermal resistance RthCalculating junction temperature Tj(k)Comparison of Tj(k-1)And Tj(k)If the relative error is greater than 1%, the process is repeated again, i.e. at this temperature Tj(k)Then, a new power loss value P is obtainedtot(k)And performing the next round of calculation by using the power consumption value until the relative error is less than 1%, and obtaining the final values of the power consumption and the junction temperature.
Preferably, the step S3 is specifically:
s 31: number of cycles of failure of power module
s 32: the influence of junction temperature of the linear region IGBT module on the service life is calculated by using a Miner linear accumulated damage model, the fatigue failure of the structure is caused after N cycles under the action of stress with a certain constant amplitude, and the fatigue damage degree D of the structure is N cycles under the stress
When D ═ 1, the structure is considered to fail fatigue;
s 33: counting the times of each load cycle by adopting a rain flow counting method, calculating the corresponding times of each load cycle until the power module fails by adopting a coefficient-Manson-Arrhenius model, calculating the fatigue damage degree of the power module by using a Miner model, and setting the times of the ith load cycle as niThe IGBT module experiences N of this loadiThe IGBT module can be fatigue-failed after the secondary cycle, and the total fatigue damage degree of the IGBT module under the action of k constant-amplitude loads is
Compared with the prior art, the beneficial effects are: the method comprises the steps of building a simulation model of a photovoltaic Boost converter with an MPPT function, combining the change of air temperature and irradiance of a photovoltaic system and the transient process of heat capacity of a power module to predict the service life, combining the influence variables of an annual junction temperature curve (large load) and a minute junction temperature curve (small load) according to the actual operating condition in one year, counting the number of times of each load cycle by using a repeated iterative calculation method and a rain flow counting method, and calculating the fatigue damage degree of the power module by using a Miner model by calculating the number of times corresponding to each load cycle until the power module fails, thereby improving the speed and the accuracy of IGBT service life prediction.
Drawings
FIG. 1 is a flow chart of a method for detecting the lifetime of a photovoltaic converter power device according to the present invention;
fig. 2 is a schematic diagram of a photovoltaic Boost converter with MPPT functionality according to the present invention;
fig. 3 is a model schematic of a thermal model of the IGBT module of the invention;
fig. 4 is a model schematic diagram of an IGBT module electrothermal model at a small time scale in the present invention.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the present patent.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "left", "right", "long", "short", etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the drawings, it is only for convenience of description and simplicity of description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationships in the drawings are only used for illustrative purposes and are not to be construed as limitations of the present patent, and specific meanings of the terms may be understood by those skilled in the art according to specific situations.
The technical scheme of the invention is further described in detail by the following specific embodiments in combination with the attached drawings:
example 1
As shown in fig. 1, a method for detecting a lifetime of a photovoltaic converter power device includes the following steps:
s1: constructing an MATLAB/Simulink simulation model of the photovoltaic Boost converter with the MPPT function;
s2: dividing time scales according to the time constant, and establishing electric heating models of the power modules under different time scales;
s3: and establishing a service life prediction model according to the electric heating model and based on the failure mode of the fatigue of the welding layer, and predicting the service life of the IGBT by adopting a coffee-Manson-Arrhenius model.
Fig. 2 is a schematic diagram of a photovoltaic Boost converter with MPPT function, and fig. 3 is a model schematic diagram of a thermal model of an IGBT module according to the present invention.
The technology predicts the service life of the power device aiming at the actual working condition of the power device of the photovoltaic converter, combines the influence variables of an annual junction temperature curve (large load) and a minute junction temperature curve (small load) according to the actual operating condition in one year period, predicts the service life of the power device by adopting a multi-time scale method, and improves the speed and the accuracy of service life prediction.
Wherein step S2 includes analyzing thermal cycling of the IGBT power module on a small time scale and on a large time scale. In this embodiment, when predicting the service life of a power device of a converter in a photovoltaic power generation system under actual conditions, not only the influence of irradiance and air temperature change but also the influence of a thermal capacitance transient process need to be considered, that is, both a large load and a small load need to be considered.
In addition, in S2, analyzing the thermal cycle of the IGBT power module on a small time scale mainly includes the following steps:
s 21: building an IGBT power loss model and a thermal model for 1-3 minutes of simulation operation in MATLAB/simulink;
s 22: combining the power loss model and the thermal model to obtain an electrothermal model of the IGBT module in a small time scale;
s 23: and (5) performing operation simulation for 1-3 min by using the electrothermal model in the step s 22.
Fig. 4 is a model schematic diagram of an IGBT module electrothermal model at a small time scale.
In S2, analyzing the thermal cycle of the IGBT power module on a large time scale mainly includes the following steps:
s 201: building an IGBT power loss model and a thermal model for simulating 1-3 years of actual working condition operation in MATLAB/simulink;
s 202: setting a state every 30 minutes within 1-3 years, wherein 17520-52560 states are provided in total, and according to the fact that the series of states are all stable operation states, collecting a group of data of illumination intensity and temperature in each state to serve as input parameters of a photovoltaic array, and obtaining average values of input current, output voltage and input voltage of a Boost converter in the state through simulation;
s 203: calculating the average value of the switching loss and the conduction loss of the IGBT and the diode in the corresponding state by using a formula;
s 204: after calculating the power loss, use the thermal resistance RthCalculating the temperature in a stable operation state;
s 205: and calculating the junction temperature and the power loss in a certain state by using a method of repeated iterative calculation.
In step S2, the power loss model: and (3) making a lookup table according to an output characteristic curve of the IGBT, a switching loss curve of the IGBT, a forward bias characteristic curve of the diode and a switching loss curve of the diode on an IGBT module device manual, inputting corresponding real-time parameters of the IGBT module in the photovoltaic Boost converter during working operation into the lookup table, and calculating to obtain the real-time power loss.
The thermal model obtains junction temperature of the IGBT module by fitting a fourth-order Foster thermal network model, and thermal resistance in the Foster model is extracted according to a thermal impedance characteristic curve on a device manual.
In addition, in step s203, the calculation formula is:
wherein psw (t) is the switching loss of the IGBT, and psw (t) ═ pon (t) + poff (t); dc (T) is a duty ratio of the IGBT, and dc (T) ton/T1-Vin/Vout; psw (d) is the switching loss of the diode, and psw (d) poff (d); dc (d) is the duty cycle of the diode, and dc (d) is 1-dc (t); iin is input current; vout is the output voltage; tj is the junction temperature; fsw is the switching frequency; TCv and TCr are temperature coefficients of the forward conduction characteristic curves. In this embodiment, TCv and TCr are temperature coefficients of the forward conduction characteristic curve, and are calculated from data of 25 ℃ and the hottest temperature, for example:
iref, Vref and Tref are reference parameters of current, voltage and junction temperature of switching loss respectively given by a device data manual; ki is an exponential parameter of switching loss changing with current, and is usually about 1 for an IGBT and about 0.6 for a diode; kv is onThe turn-off loss index coefficient changing with the voltage is about 1.3-1.4 for IGBT and about 0.6 for diode; TCEsw is the temperature coefficient of IGBT switching loss, and is about 0.003/K; TCErr is the temperature coefficient of the diode switching losses, which is about 0.006/K.
In addition, in step s204,
the junction temperature of the IGBT is Tj(T)＝Ptot(T)·Rth(j-s)(T)+(Ptot(T)+Ptot(D))·Rth(s-a)+Ta
The junction temperature of the diode is Tj(D)＝Ptot(D)·Rth(j-s)(D)+(Ptot(T)+Ptot(D))·Rth(s-a)+Ta
Wherein, Ptot(T)For power loss of IGBT, Ptot(D)Is the power loss of the diode; rth(j-s)(T)Is the thermal resistance between the IGBT junction layer and the radiator, Rth(j-s)(D)Is the thermal resistance between the diode junction layer and the heat sink, Rth(s-a)Is the thermal resistance between the heat sink and the environment; t isaIs ambient temperature.
In addition, step s205 is mainly: for one of the stable operating states, the junction temperature T in the last state is calculatedj(k-1)Power loss value P of IGBT module undertot(k-1)Combining the power loss value of the IGBT module with the thermal resistance RthCalculating junction temperature Tj(k)Comparison of Tj(k-1)And Tj(k)If the relative error is greater than 1%, the process is repeated again, i.e. at this temperature Tj(k)Then, a new power loss value P is obtainedtot(k)And performing the next round of calculation by using the power consumption value until the relative error is less than 1%, and obtaining the final values of the power consumption and the junction temperature.
Wherein, step S3 specifically includes:
s 31: number of cycles of failure of power module
s 32: the influence of junction temperature of the linear region IGBT module on the service life is calculated by using a Miner linear accumulated damage model, the fatigue failure of the structure is caused after N cycles under the action of stress with a certain constant amplitude, and the fatigue damage degree D of the structure is N cycles under the stress
When D ═ 1, the structure is considered to fail fatigue;
s 33: counting the times of each load cycle by adopting a rain flow counting method, calculating the corresponding times of each load cycle until the power module fails by adopting a coefficient-Manson-Arrhenius model, calculating the fatigue damage degree of the power module by using a Miner model, and setting the times of the ith load cycle as niThe IGBT module experiences N of this loadiThe IGBT module can be fatigue-failed after the secondary cycle, and the total fatigue damage degree of the IGBT module under the action of k constant-amplitude loads is
In addition, when the service life of a power device of a converter in a photovoltaic power generation system under actual working conditions is predicted, not only the influence of irradiance and air temperature change but also the influence of a heat capacity transient process are considered, namely, a large load and a small load need to be considered. In this embodiment, the junction temperature curves obtained by simulation in the small time scale and the large time scale are counted by a rain flow counting method to obtain the junction temperature amplitude, the mean value, and the cycle number. And then calculating the corresponding times when each load circulates to the failure of the power module by using a coffee-Manson-Arrhenius model, and calculating the fatigue damage degree of the power module by using a Miner model.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A method for detecting the service life of a photovoltaic converter power device is characterized by comprising the following steps:
s1: constructing an MATLAB/Simulink simulation model of the photovoltaic Boost converter with the MPPT function;
s2: dividing time scales according to the time constant, and establishing electric heating models of the power modules under different time scales;
s3: and establishing a service life prediction model according to the electric heating model and based on the failure mode of the fatigue of the welding layer, and predicting the service life of the IGBT by adopting a coffee-Manson-Arrhenius model.
2. The method for detecting the service life of the photovoltaic converter power device as claimed in claim 1, wherein the step S2 includes analyzing the thermal cycles of the IGBT power module on a small time scale and a large time scale.
3. The method for detecting the service life of the photovoltaic converter power device according to claim 2, wherein in the step S2, analyzing the thermal cycle of the IGBT power module on a small time scale mainly comprises the following steps:
s 21: building an IGBT power loss model and a thermal model for 1-3 minutes of simulation operation in MATLAB/simulink;
s 22: combining the power loss model and the thermal model to obtain an electrothermal model of the IGBT module in a small time scale;
s 23: and (5) performing operation simulation for 1-3 min by using the electrothermal model in the step s 22.
4. The method for detecting the service life of the photovoltaic converter power device according to claim 3, wherein in the step S2, the step of analyzing the thermal cycle of the IGBT power module under a large time scale mainly comprises the following steps:
s 201: building an IGBT power loss model and a thermal model for simulating 1-3 years of actual working condition operation in MATLAB/simulink;
s 202: setting a state every 30 minutes within 1-3 years, wherein 17520-52560 states are provided in total, and according to the fact that the series of states are all stable operation states, collecting a group of data of illumination intensity and temperature in each state to serve as input parameters of a photovoltaic array, and obtaining average values of input current, output voltage and input voltage of a Boost converter in the state through simulation;
s 203: calculating the average value of the switching loss and the conduction loss of the IGBT and the diode in the corresponding state by using a formula;
s 204: after calculating the power loss, use the thermal resistance RthCalculating the temperature in a stable operation state;
s 205: and calculating the junction temperature and the power loss in a certain state by using a method of repeated iterative calculation.
5. The method for detecting the lifetime of a photovoltaic converter power device according to claim 2, wherein in the step S2, the power loss model: and (3) making a lookup table according to an output characteristic curve of the IGBT, a switching loss curve of the IGBT, a forward bias characteristic curve of the diode and a switching loss curve of the diode on an IGBT module device manual, inputting corresponding real-time parameters of the IGBT module in the photovoltaic Boost converter during working operation into the lookup table, and calculating to obtain the real-time power loss.
6. The method of claim 5, wherein the thermal model: and fitting a fourth-order Foster thermal network model to obtain the junction temperature of the IGBT module, wherein the thermal resistance in the Foster model is extracted according to a thermal impedance characteristic curve on an element manual.
7. The method for detecting the lifetime of a photovoltaic converter power device according to claim 4, wherein in step s203, the calculation formula is:
wherein psw (t) is the switching loss of the IGBT, and psw (t) ═ pon (t) + poff (t); dc (T) is a duty ratio of the IGBT, and dc (T) ton/T1-Vin/Vout; psw (d) is the switching loss of the diode, and psw (d) poff (d); dc (d) is the duty cycle of the diode, and dc (d) is 1-dc (t); iin is input current; vout is the output voltage; tj is the junction temperature; fsw is the switching frequency; TCv and TCr are temperature coefficients of the forward conduction characteristic curves.
8. The method for detecting the service life of a photovoltaic converter power device according to claim 7, wherein in the step s204,
the junction temperature of the IGBT is Tj(T)＝Ptot(T)·Rth(j-s)(T)+(Ptot(T)+Ptot(D))·Rth(s-a)+Ta
The junction temperature of the diode is Tj(D)＝Ptot(D)·Rth(j-s)(D)+(Ptot(T)+Ptot(D))·Rth(s-a)+Ta
Wherein, Ptot(T)For power loss of IGBT, Ptot(D)Is power of a diodeLoss; rth(j-s)(T)Is the thermal resistance between the IGBT junction layer and the radiator, Rth(j-s)(D)Is the thermal resistance between the diode junction layer and the heat sink, Rth(s-a)Is the thermal resistance between the heat sink and the environment; t isaIs ambient temperature.
9. The method for detecting the lifetime of a photovoltaic converter power device according to claim 8, wherein step s205 mainly comprises: for one of the stable operating states, the junction temperature T in the last state is calculatedj(k-1)Power loss value P of IGBT module undertot(k-1)Combining the power loss value of the IGBT module with the thermal resistance RthCalculating junction temperature Tj(k)Comparison of Tj(k-1)And Tj(k)If the relative error is greater than 1%, the process is repeated again, i.e. at this temperature Tj(k)Then, a new power loss value P is obtainedtot(k)And performing the next round of calculation by using the power consumption value until the relative error is less than 1%, and obtaining the final values of the power consumption and the junction temperature.
10. The method for detecting the lifetime of the photovoltaic converter power device according to claim 9, wherein the step S3 specifically includes:
s 31: number of cycles of failure of power module
s 32: the influence of junction temperature of the linear region IGBT module on the service life is calculated by using a Miner linear accumulated damage model, the fatigue failure of the structure is caused after N cycles under the action of stress with a certain constant amplitude, and the fatigue damage degree D of the structure is N cycles under the stress
When D ═ 1, the structure is considered to fail fatigue;
s 33: counting the times of each load cycle by adopting a rain flow counting method, calculating the corresponding times of each load cycle until the power module fails by adopting a coefficient-Manson-Arrhenius model, calculating the fatigue damage degree of the power module by using a Miner model, and setting the times of the ith load cycle as niThe IGBT module experiences N of this loadiThe IGBT module can be fatigue-failed after the secondary cycle, and the total fatigue damage degree of the IGBT module under the action of k constant-amplitude loads is
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| US20220341986A1 (en) * | 2021-04-20 | 2022-10-27 | Wuhan University | Method and system for predicting insulated gate bipolar transistor lifetime based on compound failure mode coupling |
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