CN110133464B - IGBT device power cycle evaluation method based on MMC converter valve application working conditions - Google Patents

IGBT device power cycle evaluation method based on MMC converter valve application working conditions Download PDF

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CN110133464B
CN110133464B CN201910399482.5A CN201910399482A CN110133464B CN 110133464 B CN110133464 B CN 110133464B CN 201910399482 A CN201910399482 A CN 201910399482A CN 110133464 B CN110133464 B CN 110133464B
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李辉
王晓
姚然
龙海洋
郑媚媚
李金元
赖伟
何蓓
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Chongqing University
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Abstract

The invention relates to an IGBT device power cycle evaluation method based on MMC converter valve application working conditions, and belongs to the technical field of high-voltage direct-current power transmission. The method comprises the following steps: firstly, obtaining conduction loss and switching loss of a device based on a loss model of an IGBT (insulated gate bipolar transistor) and a diode, and extracting average junction temperature and junction temperature fluctuation amplitude of the IGBT device and the diode according to a thermal network model of the IGBT device; secondly, considering the operation condition of the MMC converter valve, providing a device fault rate calculation model, and acquiring the device fault rate and cycle times; and finally, performing reliability evaluation modeling on the IGBT device based on Miner's rule and the equal damage principle, and obtaining the change rule of the reliability index of the IGBT device under different external test conditions to form a reliability evaluation scheme. The method for evaluating the reliability of the IGBT device is formed, and has important significance for accurately evaluating the reliability of the IGBT device for the MMC converter valve.

Description

IGBT device power cycle evaluation method based on MMC converter valve application working conditions
Technical Field
The invention belongs to the technical field of high-voltage direct-current transmission, and relates to an IGBT device power cycle evaluation method based on MMC converter valve application conditions.
Background
A high-capacity Modular Multilevel Converter (MMC) converter valve is a main topological form of a flexible direct-current transmission system, and the reliability of an IGBT device in the converter valve component directly influences the reliability of converter valve equipment. The reliability of the IGBT device is closely related to external stress of key parts of the IGBT device, internal materials and electromechanical thermal stress, and the influence of the operation condition needs to be considered. However, the research on high-voltage high-power flexible direct-current equipment is late in China, the research foundation is weak, and the research on the reliability evaluation method of the IGBT device is lacked. If the MMC converter valve is stopped due to failure of the IGBT device, the economic loss can reach tens of millions of yuan, so that the reliability analysis of the IGBT device can be accurately carried out by considering the application working condition of the device, and an effective reliability evaluation scheme is formed, and the method has important practical significance.
The existing reliability test for the IGBT device is mainly carried out according to related test standards, and the method only provides reliability test conditions and test time, but is difficult to obtain theoretical support, so that the test result is inaccurate, and the reliability test method is difficult to correspond to the service life of the IGBT device under the application working condition. Therefore, it is necessary to research a reliability evaluation model of the IGBT device to obtain a change rule of reliability indexes under different external test conditions, so as to form an effective reliability evaluation scheme.
Based on the background, the invention provides an IGBT device power cycle evaluation method based on an MMC converter valve application condition, aiming at the problem that the reliability test of the IGBT device in the existing method is difficult to accurately evaluate the service life of the IGBT device under the application condition.
Disclosure of Invention
In view of this, the invention aims to provide an IGBT device power cycle evaluation method based on an MMC converter valve application condition, which is used for more comprehensively and accurately evaluating the reliability of an IGBT device for an MMC converter valve.
In order to achieve the purpose, the invention provides the following technical scheme:
a power cycle evaluation method of an IGBT device based on an application condition of an MMC converter valve is characterized in that accumulated damage of the device is obtained by calculating junction temperature amplitude and junction temperature fluctuation of the IGBT device in the operation process, and an IGBT device reliability evaluation experiment is designed based on an equal damage principle; the method specifically comprises the following steps:
s1: according to the current and voltage of the IGBT device under the application working condition, obtaining the conduction loss and the switching loss of the device based on the loss models of the IGBT and the diode, and extracting the average junction temperature and the junction temperature fluctuation amplitude of the IGBT device and the diode according to the thermal network model of the IGBT device;
s2: considering the operation condition of the MMC converter valve, and establishing an IGBT device fault rate calculation model;
s3: and (3) carrying out reliability evaluation modeling on the IGBT device based on Miner rule and equal damage principle, obtaining the change rule of IGBT reliability indexes under different external test conditions, and forming a reliability evaluation scheme.
Further, the step S1 specifically includes: calculating the losses of the IGBT and the diode according to the current and voltage of the IGBT device under the application working condition, establishing a thermal network model of the IGBT device, and extracting the average junction temperature and junction temperature fluctuation amplitude of the IGBT device and the diode according to the losses of the IGBT device;
total loss P of IGBTT,iComprises the following steps:
Figure GDA0003316971390000021
total loss P of the diodeD,iComprises the following steps:
Figure GDA0003316971390000022
wherein the subscripts T and D denote an IGBT and a diode, respectively,
Figure GDA0003316971390000023
and Psw,iRepresenting the average conduction and switching losses of the element under condition Iavg,iAnd Irms,iRespectively representing the average value and the effective value, U, of the current of the element in the working condition i in one fundamental wave periodT0And RCEFitting parameters, U, for the IGBT conduction characteristic curveD0And RDFitting parameters for the diode conduction characteristic curve; a isT、bTAnd cTFitting parameters for IGBT switching loss characteristic curve, aD、bDAnd cDFitting parameters for a diode reverse recovery loss characteristic curve;
the method is based on a common thermal network model Foster model, and mainly comprises two parameters of thermal resistance and thermal capacity. The thermal resistance determines the mean junction temperature value, while the thermal capacity determines the junction temperature fluctuation value. The thermal resistance and the heat capacity value are obtained by fitting through a thermal impedance characteristic curve provided by a manufacturer, and the formula is as follows:
Figure GDA0003316971390000024
where n is the order of the thermal network, RkIs the k-th order thermal resistance, τkIs the kth order time constant, τk＝Rk*Ck，CkIs the kth order heat capacity;
the average junction temperature of the IGBT and diode is:
Figure GDA0003316971390000025
wherein the subscripts T and D denote IGBT and diode, respectively, Tj，iRepresenting the junction temperature, P, of the element under condition iiRepresenting the total loss of the element, R, under condition ithJCAnd RthCHInternal and external thermal resistances of the element, THIndicating the temperature of the heat sink.
Further, in step S2, according to the guidance of FIDES Guide 2009, the method for establishing a fault rate calculation model of the MMC converter valve element under the i operating condition is as follows:
λcom,i＝(λ0Th·πTh,i+λ0TC·πTC,i)·πin·πPm·πPr
wherein, piTh,i.And piTC,iRespectively representing the thermal stress factor and the temperature cycle factor of the element under the working condition i, piinRepresenting the overstress contribution factor, pi, of the elementPmCharacterizing the influence of the manufacturing quality of the element, πPrCharacterizing the influence of the reliability quality management and control level, λ, in the life cycle of the element0ThAnd λ0TCRespectively representing the basic failure rate of the element corresponding to the thermal stress factor and the temperature cycle factor.
Further, for the thermal stress factor λ0ThBasic failure rate lambda of element corresponding to temperature cycle factor0TCTaking a guide rule to give a value when analyzing the failure rate of the welding type IGBT device; when the failure rate of the crimping type IGBT device is analyzed, the thermal stress factor is as follows:
Figure GDA0003316971390000031
wherein, both alpha and beta are constants, and the corresponding specific numerical values of different elements are different, wherein alpha of the IGBT and the diode is 1, beta is 8122.8, alpha of the capacitor is 0.85, and beta is 4641.6; t isiThe temperature parameters under the working condition i correspond to junction temperatures of the IGBT and the diode;
the temperature cycling factor is:
Figure GDA0003316971390000032
wherein, tiRepresenting the accumulated running time of the element under the working condition i; n is a radical ofcy,iThe junction temperature cycle fluctuation times of the element under the working condition i; n is a radical of0The reference cycle fluctuation times are expressed, and the value is generally 2; thetacy,iRepresenting the junction temperature fluctuation cycle time of the element under the working condition i; theta0Represents a reference cycle time, generally of value 12; delta Tcy,iIs the junction temperature fluctuation amplitude of the element under the working condition i; t ismax_cy,iThe maximum value of the fluctuation of the junction temperature of the element under the working condition i is obtained; gamma, p and m are adjustment coefficients of different elements, wherein gamma of the IGBT and the diode is 1, p is 1/3, m is 1.9, gamma of the capacitor is 0.14, p is 1/3, and m is 1.9. Pi of elementinTake 3.3837, πPmTake 0.71, piPrAnd taking 4.
Further, the step S3 specifically includes: under the working condition i, the junction temperature cycle period T of the IGBT deviceiComprises the following steps:
Figure GDA0003316971390000033
wherein, tiRepresenting the accumulated running time of the IGBT device under the working condition i; n is a radical ofcy,iThe junction temperature cycle fluctuation times of the IGBT device under the working condition i;
under working condition i, the cycle number N of the IGBT devicef,iComprises the following steps:
Figure GDA0003316971390000041
wherein λ iscom,iThe failure rate of the IGBT device under the working condition i is shown;
total running time TtotalDamage D of rear IGBT devicesjComprises the following steps:
Figure GDA0003316971390000042
Figure GDA0003316971390000043
wherein K is the total operating time TtotalNumber of different operating conditions, t, involved in the processiRepresenting the accumulated running time of the IGBT device under the working condition i;
unit time (plus cycle period T of test conditions)cyc) After the reliability test, the damage factor of the IGBT device is as follows:
Figure GDA0003316971390000044
wherein p is the number of different stresses involved in the reliability test, and Ncy,jThe number of junction temperature cycle fluctuations, N, of the IGBT device under stress jf,jThe number of cycles of the IGBT device under the stress j;
in order to make the total damage of the reliability test equal to the total damage of the actual operation, the reliability evaluation time is obtained as follows:
Figure GDA0003316971390000045
under the applied external test conditions, t is carried outsyAnd (3) testing the reliability of the duration, and if the performance of the IGBT device is still normal, considering the total operation T in the life cycletotalThe IGBT device is reliable.
The invention has the beneficial effects that:
(1) according to the reliability evaluation method, reliability evaluation modeling is carried out on the IGBT device based on the Miner rule and the equal damage factor principle, so that an IGBT device reliability evaluation scheme is formed, and the reliability evaluation accuracy of the IGBT device for the MMC converter valve is greatly improved.
(2) The reliability testing method provided by the invention can consider the influence of the circulation effect of different time scales, and can design the reliability evaluation scheme of the IGBT device according to the equal damage principle by considering short-time scale damage and long-time scale.
(3) According to the invention, the influence of different applied test stresses on the reliability of the IGBT device can be obtained by considering the change rule of the reliability index of the IGBT device under different applied test conditions. The reliability test time can be controlled by controlling the reliability test electrical stress and the temperature stress.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
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For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a flow chart of a reliability evaluation method of an IGBT device for an MMC converter valve;
FIG. 2 is a topological diagram of a submodule of an MMC converter valve;
fig. 3 is a schematic diagram of junction temperature fluctuation of an IGBT device under different time scales;
FIG. 4 is a schematic diagram of IGBT junction temperature under an inversion condition;
FIG. 5 is a schematic diagram of the failure rate and cycle number of the IGBT device under the inversion condition;
FIG. 6 is a schematic diagram of damage of an IGBT device in an inversion working condition for 30 years;
FIG. 7 is a schematic diagram of damage factors of 1h in an inversion working condition stress experiment;
FIG. 8 is a schematic diagram of damage factors of the IGBT device after 1h inversion working condition stress reliability evaluation;
FIG. 9 is a schematic diagram of reliability evaluation time of an inversion working condition stress IGBT device;
FIG. 10 is a schematic diagram of the damage factors of the device and the assembly after 1h reliability test;
FIG. 11 is a schematic diagram of reliability evaluation time of an inversion working condition stress IGBT device;
FIG. 12 is a schematic diagram of damage factors of the IGBT device after 1h inversion working condition stress reliability test;
FIG. 13 is a schematic diagram of reliability evaluation time of an inverter working condition stress IGBT device;
fig. 14 is a projection diagram of reliability evaluation time of the inverter condition stress IGBT device.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic way, and the features in the following embodiments and examples may be combined with each other without conflict.
Referring to fig. 1 to 14, fig. 1 is a flowchart of an IGBT device reliability evaluation method for an MMC converter valve, and as shown in fig. 1, a method for evaluating a power cycle of an IGBT device based on an application condition of an MMC converter valve includes the following steps for a specific example:
taking 3.3kV/1500A welding type IGBT module adopted in the flexible and straight construction of mansion as an example, the topology of the IGBT module is as shown in fig. 2, and each IGBT module mainly comprises 2 IGBT modules (VT1, VD1, VT2, VD2), a capacitor C, and the like. The rated load reliability test is carried out according to the most serious operation condition of the mansion engineering, the factors of shutdown maintenance, fault shutdown and the like are considered, the operation life of the equipment is considered in 30 years, and the equipment is estimated according to the average shutdown of 4 times per year, namely, two cycles are involved in the actual operation and the reliability test, wherein the short-time scale fluctuation takes the power frequency as a period, and the long-time scale fluctuation caused by the shutdown or the disconnection of the reliability test is shown in a schematic diagram in figure 3. When analyzing the damage degree of actual operation and reliability test, it needs to calculate and accumulate separately.
According to the reliability test scheme of the IGBT device, a flow is formulated, IGBT junction temperatures of a long time scale and a short time scale are respectively calculated, and the fault rate and the cycle times N corresponding to the junction temperature cycles of the two time scales are obtainedfTherefore, damage of 30 years of total operation time and damage factors of the device after the unit time (1h) of reliability test are obtained, and the shortest reliability test time required under the given external stress is obtained based on the equal damage principle.
1) And obtaining the conduction loss and the switching loss of the device based on the loss models of the IGBT and the diode, establishing a thermal network model of the IGBT device, and extracting the average junction temperature and the junction temperature fluctuation amplitude of the IGBT device and the diode.
The total losses of the IGBT and diode are:
Figure GDA0003316971390000061
Figure GDA0003316971390000062
the thermal capacitance and thermal resistance of the IGBT device and the diode are as follows:
Figure GDA0003316971390000063
the average junction temperature of the IGBT device and the diode is:
Figure GDA0003316971390000064
junction temperature fluctuations on a short time scale are caused by switching of the device during operation, with a period of 0.02 s. The junction temperature fluctuation on a long time scale is caused by shutdown, the junction temperature fluctuation is the fluctuation between the average junction temperature in a running state and the average temperature in a shutdown state, and the period is 1 h. The four-season influence is comprehensively considered when analyzing the junction temperature of the total operation process, taking the inversion working condition as an example, the junction temperature of the IGBT device is shown in FIG. 4.
2) And establishing a failure rate calculation model of the IGBT device, combining a junction temperature calculation result, and obtaining the failure rate and the cycle number of the device.
According to the Guide rule of the FIDES Guide 2009, a unified fault rate calculation model of the MMC converter valve element under the i operating conditions is established:
λcom,i＝(λ0Th·πTh,i+λ0TC·πTC,i)·πin·πPm·πPr
basic failure rate lambda of element corresponding to thermal stress factor and temperature cycle factor0ThAnd λ0TCAnd (3) taking the guide rule to give a value when analyzing the fault rate of the welding type IGBT device.
When the failure rate of the crimping type IGBT device is analyzed, the thermal stress factor is as follows:
Figure GDA0003316971390000071
the temperature cycling factor is:
Figure GDA0003316971390000072
combining junction temperature results, IGBT devices under various inversion conditions, short time scales and long time scales can be obtainedFailure rate per season and cycle number Nf. The calculation results are shown in fig. 5, respectively.
3) And finally, performing reliability evaluation modeling on the IGBT device based on Miner's rule and the equal damage principle, acquiring the change rule of the IGBT reliability index under different external test conditions, and forming a reliability evaluation scheme.
Under the working condition i, the junction temperature cycle period of the IGBT device is as follows:
Figure GDA0003316971390000073
under working condition i, the cycle number N of the IGBT devicef,iComprises the following steps:
Figure GDA0003316971390000074
total running time TtotalDamage D of rear IGBT devicesjComprises the following steps:
Figure GDA0003316971390000075
Figure GDA0003316971390000076
unit time (plus cycle period T of test conditions)cyc) After the reliability test, the damage factor of the IGBT device is as follows:
Figure GDA0003316971390000077
in order to make the total damage of the reliability test equal to the total damage of the actual operation, the reliability evaluation time can be obtained as follows:
Figure GDA0003316971390000078
considering the damage of the IGBT device after the total operating life is 30 years and the damage factor distribution of the IGBT device after the reliability evaluation time is 1h, as shown in fig. 6 and 7.
Under the applied external test conditions, t is carried outsyAnd (3) testing the reliability of the duration, and if the performance of the IGBT device is still normal, considering the total operation T in the life cycletotalThe IGBT device is reliable.
Based on the above example analysis, the change rules of the damage factors and the evaluation time of the IGBT device under different reliability evaluation conditions are further researched, so that a more effective reliability evaluation scheme is realized. The following analyses were mainly made in terms of cycle time on a long time scale, electrical stress:
(1) reliability evaluation of the effects of stress cycle
The results of the change in the damage factor of each device after 1h reliability test are shown in fig. 8. The results of the variation of the reliability test time required for the IGBT device with long time scale cycle periods are shown in fig. 9.
(2) Reliability assessment of the effects of electrical stress
Changing the voltage stress can change the losses of the IGBT devices, which in turn affects junction temperature and damage caused by a single cycle. The relationship between the damage factor and the voltage of the IGBT device after 1h reliability evaluation is shown in FIG. 10, wherein U0Are the voltage parameters used in the above case. The result of the variation of the required reliability evaluation time of the IGBT device with the long time scale cycle period is shown in fig. 11.
(3) Combined effect of cycle period and electrical stress
The damage factors of the IGBT device after 1h reliability evaluation are shown in FIG. 12 by comprehensively considering the cycle period and the electric stress influence. The result of the variation of the reliability evaluation time of the IGBT device with the long time scale cycle period and the voltage is shown in fig. 13. The projection diagram of the reliability test time of the IGBT device under different applied evaluation stresses is shown in FIG. 14.
Therefore, the reliability evaluation modeling is carried out on the IGBT device based on the Miner rule and the equal damage factor principle by adopting the IGBT device power cycle evaluation method based on the MMC converter valve application working condition, the change rules of the reliability indexes such as the failure rate of the IGBT device under different external test conditions are obtained, the reliability evaluation scheme is formed, and the reliability evaluation accuracy of the IGBT device is greatly improved. The evaluation method can consider the influence of application conditions and cyclic stress of different time scales, and can be widely applied to reliability evaluation of the IGBT device for the MMC converter valve.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.

Claims (4)

1. The IGBT device power cycle evaluation method based on the MMC converter valve application working condition is characterized by comprising the following steps:
s1: according to the current and voltage of the IGBT device under the application working condition, obtaining the conduction loss and the switching loss of the IGBT device based on the loss models of the IGBT and the diode, establishing a thermal network model of the IGBT device, and extracting the average junction temperature and the junction temperature fluctuation amplitude of the IGBT and the diode;
s2: considering the operation condition of the MMC converter valve, and establishing an IGBT device fault rate calculation model;
s3: performing reliability evaluation modeling on the IGBT device based on Miner's rule and equal damage principle, obtaining the change rule of the reliability index of the IGBT device under different external test conditions, and forming a reliability evaluation scheme;
under the working condition i, the junction temperature cycle period T of the IGBT deviceiComprises the following steps:
Figure FDA0003316971380000011
wherein, tiRepresenting the accumulated running time of the IGBT device under the working condition i; n is a radical ofcy,iFor IGBT device under working condition iThe number of junction temperature cycling fluctuations of the device;
under working condition i, the cycle number N of the IGBT devicef,iComprises the following steps:
Figure FDA0003316971380000012
wherein λ iscom,iThe failure rate of the IGBT device under the working condition i is shown;
total running time TtotalDamage factor D of rear IGBT devicetotalComprises the following steps:
Figure FDA0003316971380000013
Figure FDA0003316971380000014
wherein K is the total operating time TtotalDifferent working conditions included in the process;
the damage factor of the IGBT device after unit time reliability test is as follows:
Figure FDA0003316971380000015
wherein p is the number of different stresses involved in the reliability test, and Ncy,jThe number of junction temperature cycle fluctuations, N, of the IGBT device under stress jf,jThe number of cycles of the IGBT device under the stress j;
in order to make the total damage of the reliability test equal to the total damage of the actual operation, the reliability evaluation time is obtained as follows:
Figure FDA0003316971380000016
under the applied external test conditions, t is carried outsyAnd (3) testing the reliability of the duration, and if the performance of the IGBT device is still normal, considering the total operation time T in the life cycletotalThe IGBT device is reliable.
2. The method for evaluating the power cycle of the IGBT device based on the MMC converter valve application condition of claim 1, wherein the step S1 is specifically as follows: calculating IGBT and diode loss models according to the current and voltage of the IGBT device under the application working condition, establishing a thermal network model of the IGBT device, and extracting the average junction temperature and junction temperature fluctuation amplitude of the IGBT and the diode according to the IGBT device loss model;
total loss P of IGBTT,iComprises the following steps:
Figure FDA0003316971380000021
total loss P of the diodeD,iComprises the following steps:
Figure FDA0003316971380000022
wherein the subscripts T and D denote an IGBT and a diode, respectively,
Figure FDA0003316971380000023
and Psw,iRepresenting the average conduction loss and the switching loss of the IGBT device under the working condition Iavg,iAnd Irms,iRespectively representing the average value and the effective value, U, of the current of the IGBT device in the working condition i in one fundamental wave periodT0And RCEFitting parameters, U, for the IGBT conduction characteristic curveD0And RDFitting parameters for the diode conduction characteristic curve; a isT、bTAnd cTFitting parameters for IGBT switching loss characteristic curve, aD、bDAnd cDFitting parameters for a diode reverse recovery loss characteristic curve;
based on a common thermal network model Foster model, a thermal resistance and a heat capacity value are obtained by fitting through a thermal impedance characteristic curve provided by a manufacturer, and the formula is as follows:
Figure FDA0003316971380000024
where n is the order of the thermal network, RkIs the k-th order thermal resistance, τkIs the kth order time constant, τk＝Rk*Ck，CkIs the kth order heat capacity;
the average junction temperature of the IGBT and diode is:
Figure FDA0003316971380000025
wherein subscripts T and D represent IGBT and diode, T'iRepresenting the average junction temperature, P, of the IGBT device under the working condition iiRepresenting the total loss, R, of the IGBT device under the working condition ithJCAnd RthCHInternal and external thermal resistances, T, of the IGBT deviceHIndicating the temperature of the heat sink.
3. The MMC converter valve application condition-based IGBT device power cycle evaluation method according to claim 2, wherein in step S2, a fault rate calculation model of the MMC converter valve IGBT device under i operating conditions is established as follows:
λcom,i＝(λ0Th·πTh,i+λ0TC·πTC,i)·πin·πPm·πPr
wherein, piTh,i.And piTC,iRespectively representing the thermal stress factor and the temperature cycle factor, pi, of the IGBT device under the working condition iinRepresents the overstress contribution factor, pi, of the IGBT devicePmCharacterizing the influence of the manufacturing quality of IGBT devices, πPrCharacterizing the influence of reliability quality management and control level, λ, in the life cycle of an IGBT device0ThAnd λ0TCRespectively representing thermal stress factor and temperature cycle factorAnd (4) basic failure rate of the corresponding IGBT device.
4. The method for evaluating the power cycle of the IGBT device based on the application condition of the MMC converter valve as claimed in claim 3, wherein the thermal stress factor lambda is0ThBasic failure rate lambda of IGBT device corresponding to temperature cycle factor0TCTaking a guide rule to give a value when analyzing the failure rate of the welding type IGBT device; when the failure rate of the crimping type IGBT device is analyzed, the thermal stress factor is as follows:
Figure FDA0003316971380000031
wherein alpha and beta are constants, the specific numerical values corresponding to different IGBT devices are different, and T'iThe temperature parameter under the working condition i corresponds to the average junction temperature of the IGBT and the diode;
the temperature cycling factor is:
Figure FDA0003316971380000032
wherein N is0Representing the number of reference junction temperature cycle fluctuations; thetacy,iRepresenting the junction temperature cycle fluctuation time of the IGBT device under the working condition i; theta0Representing a reference junction temperature cycle fluctuation time; delta Tcy,iThe junction temperature fluctuation amplitude of the IGBT device under the working condition i; t ismax_cy,iThe maximum value of the junction temperature fluctuation amplitude of the IGBT device under the working condition i is obtained; and gamma, p and m are adjustment coefficients of different IGBT devices.
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