CN110133464A - A kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition - Google Patents
A kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition Download PDFInfo
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Abstract
The present invention relates to a kind of IGBT device power cycle assessment methods based on MMC converter valve application operating condition, belong to technical field of HVDC transmission.This method comprises: according to IGBT device ther mal network model, extracting the average junction temperature and junction temperature fluctuation amplitude of IGBT device and diode firstly, the loss model based on IGBT and diode, obtains the conduction loss and switching loss of device；Secondly, considering MMC converter valve operating condition, device failure rate computation model, acquisition device failure rate and cycle-index are proposed；Reliability assessment finally is carried out to IGBT device based on Miner rule and equivalent damage principle to model, and is obtained the changing rule of IGBT device reliability index under different additional test conditions, is formed reliability Te st grogram.The present invention forms IGBT device reliability assessment method, is of great significance to accurate evaluation MMC converter valve with IGBT device reliability.
Description
Technical field
The invention belongs to technical field of HVDC transmission, are related to a kind of IGBT device based on MMC converter valve application operating condition
Part power cycle assessment method.
Background technique
High-capacity module multilevel converter (MMC) converter valve is the main topological form of flexible HVDC transmission system,
The reliability of IGBT device in converter valve components directly influences the reliability of converter valve equipment.IGBT device reliability and its
Critical component applied stress, internal material and electromechanical thermal stress are closely related, need to consider the influence of operating condition.However China
It starts late in terms of the soft straight equipment research of high-power, Research foundation is weak, lacks to IGBT device reliability assessment side
The research of method.If how economic loss is examined up to up to ten million members because IGBT device failure causes MMC converter valve to be stopped transport
Consider the application operating condition of device, fail-safe analysis accurately is carried out to IGBT device, forming effective reliability Te st grogram has weight
The realistic meaning wanted.
The existing reliability test for IGBT device is mainly carried out according to relevant testing standard, and this method only gives
Reliability test condition and testing time, it can be difficult to obtain its theory support, so as to cause test result inaccuracy, be difficult with
It is corresponding using the IGBT device service life under operating condition.Therefore, it is necessary to study IGBT device reliability appraisal models, obtain different
Reliability index changing rule under additional test condition forms effective reliability Te st grogram.
Based on the above background, for existing method IGBT device reliability test be difficult to accurate evaluation its application operating condition under
Service life problem, the present invention proposes a kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of IGBT device power based on MMC converter valve application operating condition
Assessment method is recycled, more comprehensive and accurate assessment MMC converter valve IGBT device reliability is used for.
In order to achieve the above objectives, the invention provides the following technical scheme:
A kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition, by calculating IGBT device
Junction temperature amplitude and junction temperature fluctuation in the process of running, obtain device accumulated damage, are based on equivalent damage principle, design IGBT device can
By property assessment experiment；This method specifically includes the following steps:
S1: according to Current Voltage of the IGBT device under application operating condition, the loss model based on IGBT and diode is obtained
The conduction loss and switching loss of device extract the average knot of IGBT device and diode according to IGBT device ther mal network model
Temperature and junction temperature fluctuation amplitude；
S2: consider the operating condition of MMC converter valve, establish IGBT device failure rate computation model；
S3: reliability assessment is carried out to IGBT device based on Miner rule and equivalent damage principle and is modeled, is obtained different additional
The changing rule of IGBT reliability index under test condition forms reliability Te st grogram.
Further, the step S1 specifically: according to IGBT device application operating condition under Current Voltage, calculate IGBT and
Diode losses are established the ther mal network model of IGBT device, are lost according to IGBT device, and the flat of IGBT device and diode is extracted
Equal junction temperature and junction temperature fluctuation amplitude；
The total losses P of IGBTT,iAre as follows:
The total losses P of diodeD,iAre as follows:
Wherein, subscript T and D respectively indicate IGBT and diode,And Psw,iIndicate that the element at operating condition i is averagely led
Logical loss and switching loss, Iavg,iAnd Irms,iIt is illustrated respectively in the current average within a primitive period of the element under operating condition i
And virtual value, UT0And RCEFor IGBT on state characteristic curve fitting parameter, UD0And RDFor diode current flow characteristic curve fitting ginseng
Number；aT、bTAnd cTFor IGBT switching loss characteristics fitting parameter, aD、bDAnd cDIt is bent for diode reverse recovery losses characteristic
Line fitting parameter；
Based on common ther mal network model Foster model, wherein mainly including two parameters of thermal resistance and thermal capacitance.Thermal resistance determines
Junction temperature mean value, and thermal capacitance determines junction temperature undulating value.By producer provide thermal impedance characteristic curve, fitting obtain thermal resistance with
Thermal capacitance value, formula are as follows:
Wherein, n is ther mal network order, RkIt is kth rank thermal resistance, τkIt is kth rank time constant, τk=Rk*Ck, CkIt is kth rank
Thermal capacitance；
The average junction temperature of IGBT and diode are as follows:
Wherein, subscript T and D respectively indicates IGBT and diode, TJ, iIndicate the junction temperature of the element at operating condition i, PiIt indicates
The total losses of element at operating condition i, RthJCAnd RthCHThe respectively internal thermal resistance and external thermal resistance of element, THIndicate radiator
Temperature.
Further, in step S2, according to 2009 directive/guide of FIDES Guide, MMC change of current valve components are established in i operating condition
Under failure rate computation model are as follows:
λcom,i=(λ0Th·πTh,i+λ0TC·πTC,i)·πin·πPm·πPr
Wherein, πTh,i.And πTC,iRespectively indicate the thermal stress factor and the temperature cycles factor of element under operating condition i, πinIndicate member
The overstress contribution factor of part, πPmCharacterize the influence of the manufacturing quality of element, πPrCharacterize the reliable property in the component life period
The influence of buret reason and controlled level, λ0ThAnd λ0TCIt respectively indicates the thermal stress factor and the corresponding element of the temperature cycles factor is basic
Failure rate.
Further, for thermal stress factor lambda0ThElement basic failure rate λ corresponding with the temperature cycles factor0TCValue,
Directive/guide is taken to provide value when analyzing welded type IGBT device failure rate；Analyze compression joint type IGBT device failure rate when, thermal stress because
Son are as follows:
Wherein, α, β are constant, and the corresponding specific value of different elements is different, and wherein the α of IGBT and diode takes 1, β
8122.8 are taken, the α of capacitor takes 0.85, β to take 4641.6；TiFor the temperature parameter under operating condition i, corresponding IGBT and diode are knot
Temperature；
The temperature cycles factor are as follows:
Wherein, tiIndicate the accumulated running time of the element at operating condition i；Ncy,iJunction temperature for the element at operating condition i is followed
Ring fluctuates number；N0It indicates to refer to circular wave number, general value is 2；θcy,iIndicate the junction temperature wave of the element at operating condition i
Dynamic circulation time；θ0It indicates to refer to circulation time, general value is 12；△Tcy,iWidth is fluctuated for the junction temperature of the element at operating condition i
Value；Tmax_cy,iMaximum value is fluctuated for the element junction temperature at operating condition i；γ, p, m are the regulation coefficient of different elements, wherein IGBT
Take 1, p that 1/3, m is taken to take 1.9 with the γ of diode, the γ of capacitor takes 0.14, p that 1/3, m is taken to take 1.9.The π of elementinTake 3.3837,
πPmTake 0.71, πPrTake 4.
Further, the step S3 specifically: at operating condition i, the junction temperature cycle period T of IGBT deviceiAre as follows:
Wherein, tiIndicate the accumulated running time of the IGBT device at operating condition i；Ncy,iFor the IGBT device at operating condition i
Junction temperature circular wave number；
At operating condition i, the cycle-index N of IGBT devicef,iAre as follows:
Wherein, λcom,iFor the failure rate of the IGBT device at operating condition i；
Total run time TtotalThe damage D of IGBT device afterwardssjAre as follows:
Wherein, K is total run time TtotalThe different operating condition numbers for including in the process, tiIndicate the IGBT device at operating condition i
The accumulated running time of part；
Unit time (the cycle period T of additional test conditioncyc) damage factor of IGBT device after reliability test are as follows:
Wherein, p is the different stress numbers that reliability test includes in the process, Ncy,jFor the IGBT device at stress j
Junction temperature circular wave number, Nf,jFor the cycle-index of the IGBT device at stress j；
In order to keep total damage of reliability test equal with the always damage of actual motion, the reliability assessment time is obtained are as follows:
Under the conditions of added external testing, t is carried outsyThe reliability test of duration, if the performance of IGBT device is still normal,
Think total operation T in life cycletotal, IGBT device is reliable.
The beneficial effects of the present invention are:
(1) reliability assessment has been carried out for IGBT device with equivalent damage factor principle the present invention is based on Miner rule to build
Mould forms IGBT device reliability Te st grogram, substantially increases the accurate of MMC converter valve IGBT device reliability assessment
Property.
(2) method for testing reliability provided by the invention, it may be considered that the influence of different time scales ringing, according to
Equivalent damage principle, it is contemplated that short-term time scale damage and long time scale design IGBT device reliability evaluating scheme.
(3) present invention, can by considering changing rule of the IGBT device reliability index outside difference plus under test condition
Obtain influence of the different additional test stresses to IGBT device reliability.Pass through control reliability test electric stress and temperature stress
The reliability test time can be controlled.
Other advantages, target and feature of the invention will be illustrated in the following description to a certain extent, and
And to a certain extent, based on will be apparent to those skilled in the art to investigating hereafter, Huo Zheke
To be instructed from the practice of the present invention.Target of the invention and other advantages can be realized by following specification and
It obtains.
Detailed description of the invention
To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention is made below in conjunction with attached drawing excellent
The detailed description of choosing, in which:
Fig. 1 is MMC converter valve IGBT device reliability assessment method flow chart；
Fig. 2 is MMC converter valve submodule topological diagram；
Fig. 3 is that IGBT device junction temperature fluctuates schematic diagram under different time scales；
Fig. 4 is IGBT junction temperature schematic diagram under inversion operating condition；
Fig. 5 is the schematic diagram of IGBT device failure rate and cycle-index under inversion operating condition；
Fig. 6 is the damage plan that inversion operating condition IGBT device runs 30 years；
Fig. 7 is inversion operating condition stress test 1h damage factor schematic diagram；
Fig. 8 is the damage factor schematic diagram of IGBT device after the assessment of 1h inversion operating condition stress reliability；
Fig. 9 is the reliability assessment time diagram of inversion operating condition stress IGBT device；
Figure 10 is the damage factor schematic diagram of device and component after 1h reliability test；
Figure 11 is inversion operating condition stress IGBT device reliability assessment time diagram；
Figure 12 is the damage factor schematic diagram of IGBT device after the stress reliability test of 1h inversion operating condition；
Figure 13 is the reliability assessment time diagram of inversion operating condition stress IGBT device；
Figure 14 is the reliability assessment time perspective view of inversion operating condition stress IGBT device.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.It should be noted that diagram provided in following embodiment is only to show
Meaning mode illustrates basic conception of the invention, and in the absence of conflict, the feature in following embodiment and embodiment can phase
Mutually combination.
Fig. 1~Figure 14 is please referred to, Fig. 1 is MMC converter valve IGBT device reliability assessment method flow chart, such as Fig. 1 institute
Show, a kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition, includes following step for specific example
It is rapid:
For the 3.3kV/1500A solder type IGBT component that soft straight engineering uses by Xiamen, topology is as shown in Fig. 2, adopt
With half-bridge structure, each IGBT component is mainly made of 2 IGBT modules (VT1, VD1, VT2, VD2), capacitor C etc..According to
The factors such as Xiamen engineering most serious service condition carries out rated load reliability test, and the maintenance that considers to stop transport, failure are stopped transport, from setting
Working life considers within standby 30 years, is stopped transport according to 4 times every year on average to estimate, i.e., all refers in actual motion and reliability test
Two kinds of circulations, first is that being fluctuated by the short-term time scale in period of power frequency, second is that when stoppage in transit or reliability test are long caused by cut-offfing
Between scale fluctuate, schematic diagram such as Fig. 3.When analyzing the degree of injury of actual motion and reliability test, it need to calculate separately and go forward side by side
Row accumulation.
According to the reliability test solution formulation process of IGBT device, long time scale and short-term time scale are calculated separately
IGBT junction temperature, the junction temperature obtained under two time scales recycle corresponding failure rate and cycle-index Nf, to always be run
The damage factor of damage in time 30 years and reliability test unit time (1h) device afterwards, is based on equivalent damage principle, obtains and exist
The most short reliability test time needed under given applied stress.
1) loss model based on IGBT and diode obtains the conduction loss and switching loss of device, establishes IGBT device
Part ther mal network model extracts the average junction temperature and junction temperature fluctuation amplitude of IGBT device and diode.
The total losses of IGBT and diode are as follows:
IGBT device and diode thermal capacitance thermal resistance value are as follows:
The average junction temperature of IGBT device and diode are as follows:
Caused by the junction temperature fluctuation of short-term time scale is the switch as device in operational process, the period is 0.02s.For a long time
Junction temperature fluctuation on scale is as caused by stopping transport, and junction temperature fluctuation is under average junction temperature and stoppage in transit state under operating status
Mean temperature between fluctuation, the period is 1h.The four seasons are comprehensively considered when analyzing the junction temperature of total operational process to be influenced, with inversion work
For condition, the junction temperature of IGBT device is as shown in Figure 4.
2) IGBT device failure rate computation model is established, in conjunction with junction temperature calculated result, and obtains device failure rate and circulation
Number.
According to 2009 directive/guide of FIDES Guide, establishes MMC change of current valve components failure rate under i operating condition and unifiedly calculate
Model:
λcom,i=(λ0Th·πTh,i+λ0TC·πTC,i)·πin·πPm·πPr
For the thermal stress factor and the corresponding element basic failure rate λ of the temperature cycles factor0ThAnd λ0TCValue, analyzing
Directive/guide is taken to provide value when welded type IGBT device failure rate.
When analyzing compression joint type IGBT device failure rate, the thermal stress factor are as follows:
The temperature cycles factor are as follows:
In conjunction with junction temperature as a result, under available inversion operating condition, short-term time scale is with IGBT device under long time scale each
The failure rate and cycle-index N in a seasonf.Calculated result difference is as shown in Figure 5.
3) reliability assessment finally is carried out to IGBT device based on Miner rule and equivalent damage principle to model, obtain not
With the changing rule of IGBT reliability index under additional test condition, reliability Te st grogram is formed.
At operating condition i, the junction temperature cycle period of IGBT device are as follows:
At operating condition i, the cycle-index N of IGBT devicef,iAre as follows:
Total run time TtotalThe damage D of IGBT device afterwardssjAre as follows:
Unit time (the cycle period T of additional test conditioncyc) damage factor of IGBT device after reliability test are as follows:
In order to keep total damage of reliability test equal with the always damage of actual motion, the reliability assessment time can be obtained are as follows:
Consider the damage of total service life damage of IGBT device and IGBT device after reliability assessment time 1h after 30 years
Factor distribution, as shown in Figure 6, Figure 7.
Under the conditions of added external testing, t is carried outsyThe reliability test of duration, if the performance of IGBT device is still normal,
Think total operation T in life cycletotal, IGBT device is reliable.
Based on above-mentioned sample calculation analysis, further studies the IGBT device damage factor under different reliability evaluating conditions, surveys
The changing rule of time is commented, to realize more effective reliability Te st grogram.Below mainly from the cycle period of long time scale,
It is analyzed in terms of electric stress:
(1) influence in reliability assessment Cyclic Stress period
The result of variations of the damage factor of each device is as shown in Figure 8 after 1h reliability test.Reliability needed for IGBT device
Testing time is as shown in Figure 9 with the result of variations of long time scale cycle period.
(2) influence of reliability assessment electric stress
Changing voltage stress can be changed the loss of IGBT device, and then influence to damage caused by junction temperature and single cycle.1h
The damage factor of IGBT device and the relationship of voltage are as shown in Figure 10 after reliability assessment, wherein U0It is the electricity that above-mentioned case uses
Press parameter.The assessment time of reliability needed for IGBT device is as shown in figure 11 with the result of variations of long time scale cycle period.
(3) combined influence of cycle period and electric stress
Comprehensively considering cycle period and electric stress influences, damage factor such as Figure 12 institute of IGBT device after the assessment of 1h reliability
Show.The IGBT device reliability assessment time is as shown in figure 13 with the result of variations of long time scale cycle period and voltage.It is different
The perspective view of IGBT device reliability test time under additional assessment stress, as shown in figure 14.
Therefore using a kind of IGBT device power cycle based on MMC converter valve application operating condition provided by the invention
Assessment method has carried out reliability assessment for IGBT device based on Miner rule and equivalent damage factor principle and has modeled, obtained
Changing rule of the reliability indexs such as the failure rate of IGBT device outside difference plus under test condition, forms reliability assessment side
Case substantially increases the accuracy of IGBT device reliability assessment.The assessment method can be considered using operating condition and different time
The influence of scale pulsating stress can be widely applied to MMC converter valve IGBT device reliability assessment.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of the technical program, should all be covered in the present invention
Scope of the claims in.
Claims (5)
1. a kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition, which is characterized in that this method tool
Body the following steps are included:
S1: according to Current Voltage of the IGBT device under application operating condition, the loss model based on IGBT and diode obtains device
Conduction loss and switching loss, according to IGBT device ther mal network model, extract the average junction temperature of IGBT device and diode with
Junction temperature fluctuation amplitude；
S2: consider the operating condition of MMC converter valve, establish IGBT device failure rate computation model；
S3: reliability assessment is carried out to IGBT device based on Miner rule and equivalent damage principle and is modeled, different additional tests are obtained
Under the conditions of IGBT reliability index changing rule, formed reliability Te st grogram.
2. a kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition according to claim 1,
It is characterized in that, the step S1 specifically: according to Current Voltage of the IGBT device under application operating condition, calculate IGBT and two poles
Pipe loss, establishes the ther mal network model of IGBT device, is lost according to IGBT device, extracts the average knot of IGBT device and diode
Temperature and junction temperature fluctuation amplitude；
The total losses P of IGBTT,iAre as follows:
The total losses P of diodeD,iAre as follows:
Wherein, subscript T and D respectively indicate IGBT and diode,And Psw,iIndicate that damage is averagely connected in the element at operating condition i
Consumption and switching loss, Iavg,iAnd Irms,iThe element being illustrated respectively under operating condition i current average and has within a primitive period
Valid value, UT0And RCEFor IGBT on state characteristic curve fitting parameter, UD0And RDFor diode current flow characteristic curve fitting parameter；aT、
bTAnd cTFor IGBT switching loss characteristics fitting parameter, aD、bDAnd cDFor diode reverse recovery losses characteristic curve fitting
Parameter；
Based on common ther mal network model Foster model, the thermal impedance characteristic curve provided by producer, fitting obtain thermal resistance with
Thermal capacitance value, formula are as follows:
Wherein, n is ther mal network order, RkIt is kth rank thermal resistance, τkIt is kth rank time constant, τk=Rk*Ck, CkIt is kth rank thermal capacitance；
The average junction temperature of IGBT and diode are as follows:
Wherein, subscript T and D respectively indicates IGBT and diode, TJ, iIndicate the junction temperature of the element at operating condition i, PiIt indicates in work
The total losses of element under condition i, RthJCAnd RthCHThe respectively internal thermal resistance and external thermal resistance of element, THIndicate the temperature of radiator
Degree.
3. a kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition according to claim 2,
It is characterized in that, establishing failure rate computation model of the MMC change of current valve components under i operating condition in step S2 are as follows:
λcom,i=(λ0Th·πTh,i+λ0TC·πTC,i)·πin·πPm·πPr
Wherein, πTh,i.And πTC,iRespectively indicate the thermal stress factor and the temperature cycles factor of element under operating condition i, πinIndicate element
Overstress contribution factor, πPmCharacterize the influence of the manufacturing quality of element, πPrCharacterize the reliable property amount pipe in the component life period
The influence of reason and controlled level, λ0ThAnd λ0TCRespectively indicate the thermal stress factor and the corresponding element basic fault of the temperature cycles factor
Rate.
4. a kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition according to claim 3,
It is characterized in that, for thermal stress factor lambda0ThElement basic failure rate λ corresponding with the temperature cycles factor0TCValue, point
Directive/guide is taken to provide value when analysing welded type IGBT device failure rate；When analyzing compression joint type IGBT device failure rate, the thermal stress factor are as follows:
Wherein, α, β are constant, and the corresponding specific value of different elements is different, TiFor the temperature parameter under operating condition i, corresponding IGBT
It is junction temperature with diode；
The temperature cycles factor are as follows:
Wherein, tiIndicate the accumulated running time of the element at operating condition i；Ncy,iWave is recycled for the junction temperature of the element at operating condition i
Dynamic number；N0It indicates to refer to circular wave number；θcy,iIndicate that the junction temperature of the element at operating condition i fluctuates circulation time；θ0It indicates
With reference to circulation time；△Tcy,iFor the junction temperature fluctuation amplitude of the element at operating condition i；Tmax_cy,iFor the element knot at operating condition i
Temperature fluctuation maximum value；γ, p, m are the regulation coefficient of different elements.
5. a kind of IGBT device power cycle assessment method based on MMC converter valve application operating condition according to claim 4,
It is characterized in that, the step S3 specifically:
At operating condition i, the junction temperature cycle period T of IGBT deviceiAre as follows:
Wherein, tiIndicate the accumulated running time of the IGBT device at operating condition i；Ncy,iFor the knot of the IGBT device at operating condition i
Warm circular wave number；
At operating condition i, the cycle-index N of IGBT devicef,iAre as follows:
Wherein, λcom,iFor the failure rate of the IGBT device at operating condition i；
Total run time TtotalThe damage D of IGBT device afterwardssjAre as follows:
Wherein, K is total run time TtotalThe different operating condition numbers for including in the process, tiIndicate the IGBT device at operating condition i
Accumulated running time；
The damage factor of IGBT device after unit time reliability test are as follows:
Wherein, p is the different stress numbers that reliability test includes in the process, Ncy,jJunction temperature for the IGBT device at stress j is followed
Ring fluctuates number, Nf,jFor the cycle-index of the IGBT device at stress j；
In order to keep total damage of reliability test equal with the always damage of actual motion, the reliability assessment time is obtained are as follows:
Under the conditions of added external testing, t is carried outsyThe reliability test of duration, if the performance of IGBT device is still normal, then it is assumed that
In total operation T of life cycletotal, IGBT device is reliable.
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| CN111585298A (en) * | 2020-05-09 | 2020-08-25 | 清华大学 | Power electronic transformer reliability analysis method and system for battery energy storage |
| CN115078954A (en) * | 2022-08-18 | 2022-09-20 | 北京芯可鉴科技有限公司 | Method and device for evaluating component in circuit and circuit |
| CN115078954B (en) * | 2022-08-18 | 2022-10-25 | 北京芯可鉴科技有限公司 | Method and device for evaluating component parts in circuit and circuit |
| CN116298652A (en) * | 2023-05-22 | 2023-06-23 | 广东电网有限责任公司阳江供电局 | MMC converter valve power module residual life assessment method and system |
| CN116298652B (en) * | 2023-05-22 | 2023-07-21 | 广东电网有限责任公司阳江供电局 | MMC converter valve power module residual life assessment method and system |
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