CN113722873A - Method and system for calculating chip junction temperature in real time based on ambient temperature and power loss - Google Patents
Method and system for calculating chip junction temperature in real time based on ambient temperature and power loss Download PDFInfo
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Abstract
The invention discloses a method, a system, a medium and equipment for calculating the junction temperature of a chip in real time based on ambient temperature and power loss, which belong to the technical field of power modules and are used for solving the technical problem that the junction temperature of the chip is difficult to measure at present, and the method adopts the principle of electricity to simulate and solve the problem, and specifically comprises the following steps: 1) constructing a chip heat conduction model in a circuit form; 2) identifying parameters in the heat conduction model; 3) calculating the power loss of the chip; 4) adding the actual environment temperature value into the heat conduction model in the form of a controllable voltage source; 5) and (4) obtaining the real-time temperature of the chip through the simulation calculation of the heat conduction model. The method has the advantages of simple calculation process, easy acquisition of the junction temperature of the chip and the like.
Description
Technical Field
The invention relates to the technical field of power modules, in particular to a method, a system, a medium and equipment for calculating junction temperature of a power chip in real time based on ambient temperature and power loss.
Background
Because the IGBT chip has the characteristics of difficult direct observation, difficult direct contact and the like in the module, no device capable of realizing the on-line monitoring of the junction temperature of the IGBT module is available in the market at present. The chip failure and the packaging failure are related to the highest junction temperature, the fluctuation range of the junction temperature, the change rate, the average junction temperature and other factors. Therefore, the real-time junction temperature of the on-line monitoring device is the key for reliable operation of the monitoring device and the system.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the technical problems in the prior art, the invention provides a power chip junction temperature real-time calculation method, a system, a medium and equipment based on ambient temperature and power loss, which have simple calculation process.
In order to solve the technical problems, the invention adopts the technical scheme that:
a real-time calculation method for the junction temperature of a chip based on ambient temperature and power loss comprises the following steps:
1) constructing a chip heat conduction model in a circuit form;
2) identifying parameters in the heat conduction model;
3) calculating the power loss of the chip;
4) adding the actual environment temperature value into the heat conduction model in the form of a controllable voltage source;
5) and (4) obtaining the real-time temperature of the chip through the simulation calculation of the heat conduction model.
As a further improvement of the above technical solution, in step 1), in the process of building a chip heat conduction model in a circuit form, a heat source is equivalent to a current source, temperature is equivalent to voltage, thermal resistance is equivalent to resistance, and thermal capacity is equivalent to capacitance.
As a further improvement of the above technical solution, in step 2), the impedance Z of the heat conduction path in the heat conduction modelthAs shown in the following formula:
Zth＝(sC1+(R1+(sC2+(R2+(sC3+(R3+(sC4+(R4+(sC5+(R5+(sC6+(R6+(sC7+R7 -1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1
wherein R is1Is the chip thermal resistance, R2Is the thermal resistance of silicon wafer, R3Is a ceramic thermal resistance, R4Is the substrate thermal resistance, R5Is thermal resistance of heat-conducting adhesive, R6Is the coolant thermal resistance, R7Is the heat sink thermal resistance; wherein C is1Is the chip heat capacity, C2Is the heat capacity of the silicon wafer, C3Is the heat capacity of the ceramic C4Is the substrate heat capacity, C5For heat capacity of the heat-conducting glue, C6To the heat capacity of the cooling liquid, C7Is the heat capacity of the radiator;
after a simplified finishing to obtain
Wherein b is0～b7Is represented by R1～R7A function expression of c0～c7Is represented as C1～C7Is used for the functional expression of (1).
As a further improvement of the above technical scheme, R1～R7And C1～C7The identification process comprises the following steps:
step response C (t) is obtained through experiments, wherein C (t) is a function of temperature and time and can be obtained through temperature measurement; wherein
AiAnd aiBy curve fittingObtained by Laplace transform
Transfer function
Wherein A isiAnd ai(i ═ 0,1,2,3,4,5,6,7) is a known number;
according to the definition of the transfer function, there is G(s) ═ ZthThe fractional coefficients are made equal, and the simultaneous equations can be solved to obtain R1～R7And C1～C7。
As a further improvement of the above technical solution, in step 3), the power loss includes an on-state loss Ploss_onOff-state losses and switching losses; in which the switching loss can be divided into a turn-on loss Ploss_sonAnd turn-off loss Ploss_soff。
As a further improvement of the above technical solution, the calculation process of the power loss is:
obtaining single turn-on loss energy E of chip by looking up product manual and combining working currentsonTurn-off loss energy EsoffOn time TsonAnd off time TsoffCalculating the turn-on loss Ploss_sonAnd turn-off loss Ploss_soffAs shown in the following equation:
according to the control strategy, the working switching frequency f and the on-state time T of the chip can be knownonAnd off-state time ToffCalculating the on-time TsonOff time TsoffOn time TonAnd off-state time ToffThe duty cycle D over the entire switching period is shown by the following equation:
Dson＝Tson*f
Dsoff＝Tsoff*f
Don＝Ton*f
Doff＝Toff*f
finally calculating the power loss P in the single switching period TlossCan be expressed as:
power loss PlossCan be obtained by superposing and synthesizing three rectangular waves with the amplitude of Ploss_son、Ploss_onAnd Ploss_soff(ii) a Duty ratio of Dson、DonAnd DsoffThe period is T, and the time delay is 0 and T respectivelysonAnd Ton+Tson。
As a further improvement of the above technical solution, the on-state loss can be obtained by the following formula: ploss_onOperating current is reduced by conduction voltage; wherein the working current can be obtained by monitoring, and the conduction voltage drop can be obtained by looking up a product manual and combining the working current.
As a further improvement of the above technical solution, in step 4), a time sequence of temperatures is constructed according to the actual ambient temperature values, and the time sequence is added to the heat conduction model of the current transformer in the form of a controllable voltage source.
The invention also discloses a real-time calculating system of the chip junction temperature based on the environmental temperature and the power loss, which comprises the following steps:
the building module is used for building a chip heat conduction model in a circuit form;
an identification module for identifying parameters in the heat conduction model;
the calculation module is used for calculating the power loss of the chip;
the adding module is used for adding the actual environment temperature value into the heat conduction model in the form of a controllable voltage source;
and the simulation module is used for obtaining the real-time temperature of the chip through the simulation calculation of the heat conduction model.
The invention further discloses a computer readable storage medium having a computer program stored thereon, characterized in that the computer program, when executed by a processor, performs the steps of the method for real-time calculation of the chip junction temperature based on ambient temperature and power loss as described above.
The invention also discloses a computer device comprising a memory and a processor, wherein the memory stores a computer program, and the computer program is characterized in that the computer program executes the steps of the method for calculating the junction temperature of the chip in real time based on the ambient temperature and the power loss when the computer program is executed by the processor.
Compared with the prior art, the invention has the advantages that:
the invention provides a thermal conduction model based on thermal resistance and thermal capacity, which solves the problem of thermal conduction by adopting the principle of electricity to simulate, defines the thermal resistance and the thermal capacity of each layer of conduction medium and simplifies the model and the calculation process. The parameter identification method based on the heat conduction impedance and the heat transfer function calculates the heat conduction impedance by adopting the principle of electricity, and calculates the transfer function of the system by carrying out curve fitting on the step response of the system; the heat conduction impedance (transfer function) is obtained by the definition of the transfer function, so that the thermal resistance and the thermal capacity of each layer of conductive medium are obtained, and the calculation process is simple.
The IGBT loss calculation method based on the product manual obtains a power loss expression in a unit switching period, and is realized in Simulink simulation by adopting a method of superposing and synthesizing a plurality of rectangular waves; aiming at the problem that the environmental temperature changes along with time, simulating the environmental temperature by adopting a controllable voltage source and adding the environmental temperature into a heat conduction model; and performing simulink simulation based on the heat conduction model, the power loss and the ambient temperature change, and obtaining the real-time temperature of the IGBT chip through simulation calculation.
Drawings
FIG. 1 is a flow chart of an embodiment of the method of the present invention.
Fig. 2 is a model diagram of thermal conduction of junction temperature of a power chip according to the present invention.
Detailed Description
The invention is further described below with reference to the figures and the specific embodiments of the description.
As shown in fig. 2, the method for calculating the chip junction temperature based on the ambient temperature and the power loss in real time according to the embodiment includes the steps of:
1) constructing a chip heat conduction model in a circuit form;
2) identifying parameters in the heat conduction model;
3) calculating the power loss of the chip;
4) adding the actual environment temperature value into the heat conduction model in the form of a controllable voltage source;
5) and (4) obtaining the real-time temperature of the chip through the simulation calculation of the heat conduction model.
In this embodiment, when the heat conduction model of the current transformer is built in step 1), the heat conduction process of the object has an obvious resistance-capacitance characteristic. Wherein the differential equations for the physical process of heat conduction and the differential equations for electrical conduction have the same form. Therefore, the problem of heat conduction is simulated and solved by adopting the principle of electricity, a heat source is equivalent to a current source, the temperature is equivalent to voltage, a thermal resistance is equivalent to a resistor, and the thermal capacity is equivalent to a capacitor; therefore, a heat conduction model of the current transformer is built in a circuit form, as shown in fig. 2:
the power chip (such as IGBT) is used as a heating source and is respectively and sequentially subjected to heat exchange with the external environment through the chip, the silicon wafer, the ceramic, the substrate, the heat-conducting glue, the cooling liquid and the radiator. Of course. In other embodiments, there may be different heat transfer media.
In this embodiment, in the process of identifying the parameters of the heat conduction model in step 2), the impedance Z of the heat conduction path is calculatedthAs shown in the following formula:
Zth＝(sC1+(R1+(sC2+(R2+(sC3+(R3+(sC4+(R4+(sC5+(R5+(sC6+(R6+(sC7+R7 -1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1
wherein R is1Is the chip thermal resistance, R2Is the thermal resistance of silicon wafer, R3Is a ceramic thermal resistance, R4Is the substrate thermal resistance, R5Is thermal resistance of heat-conducting adhesive, R6Is the coolant thermal resistance, R7Is the heat sink thermal resistance; wherein C is1Is the chip heat capacity, C2Is the heat capacity of the silicon wafer, C3Is the heat capacity of the ceramic C4Is the substrate heat capacity, C5For heat capacity of the heat-conducting glue, C6To the heat capacity of the cooling liquid, C7Is the heat capacity of the radiator;
after a simplified finishing to obtain
Wherein b is0～b7Is represented by R1～R7A function expression of c0～c7Is represented as C1～C7The functional expression of (a);
the step response C (t) of the system can be obtained by experiment: c (t) is a function of temperature and time, and can be obtained by thermometry, and C (t) is expressed as
Wherein A isiAndaican be obtained by curve fitting and by Laplace transform
Transfer function
Wherein A isiAnd ai(i ═ 0,1,2,3,4,5,6,7) is a known number;
according to the definition of the transfer function, there is G(s) ═ ZthThe fractional coefficients are made equal, and the simultaneous equations can be solved to obtain R1～R7And C1～C7。
In this embodiment, in step 3), the power loss of the IGBT chip is mainly divided into three parts: loss in on state (P)loss_on) Off-state loss and onOff-state losses, wherein the off-state losses are very small and negligible; the switching loss can be further divided into a switching loss (P)loss_son) And turn-off loss (P)loss_soff)。
The on-state loss can be obtained by the following equation:
Ploss_onoperating current is reduced by conduction voltage;
wherein the working current can be obtained by monitoring, and the conduction voltage drop can be obtained by looking up a product manual and combining the working current.
The single turn-on energy loss (E) of the IGBT chip can be obtained by looking up a product manual and combining the working currentson) And turn-off loss energy (E)soff) And on-time (T)son) And off time (T)soff) Calculating the turn-on loss (P)loss_son) And turn-off loss (P)loss_soff) As shown in the following equation:
according to the control strategy of the converter, the working switching frequency f and the on-state time (T) of the IGBT can be knownon) And off time (T)off) Calculating the on-time (T)son) Off time (T)soff) On time (T)on) And off time (T)off) The duty cycle D over the entire switching period is shown by the following equation:
Dson＝Tson*f
Dsoff＝Tsoff*f
Don＝Ton*f
Doff＝Toff*f
finally calculating IGBT power loss P in single switching period (T is 1/f)lossCan be expressed as:
IGBT power loss PlossCan be obtained by superposing and synthesizing three rectangular waves with the amplitude of Ploss_son、Ploss_onAnd Ploss_soff(ii) a Duty ratio of Dson、DonAnd DsoffThe period is T, and the time delay is 0 and T respectivelysonAnd Ton+Tson。
In this embodiment, in step 4), since the environmental temperature changes with time, a temperature time sequence is constructed according to the actual environmental temperature value, and the temperature time sequence is added to the heat conduction model of the converter in the form of a controllable voltage source, so as to calculate the junction temperature of the IGBT chip of the converter module in real time.
In this embodiment, in step 5), R is substituted into the model established according to the heat conduction principle of the converter1～R7And C1～C7And the environment temperature is simulated by using a controllable voltage source, the heat source is simulated by using a controllable current source, the initial temperature is set, and the real-time temperature of the IGBT chip is obtained through Simulink simulation calculation.
The invention provides a thermal conduction model based on thermal resistance and thermal capacity, which solves the problem of thermal conduction by adopting the principle of electricity to simulate, defines the thermal resistance and the thermal capacity of each layer of conduction medium and simplifies the model and the calculation process. The parameter identification method based on the heat conduction impedance and the heat transfer function calculates the heat conduction impedance by adopting the principle of electricity, and calculates the transfer function of the system by carrying out curve fitting on the step response of the system; the heat conduction impedance (transfer function) is obtained by the definition of the transfer function, so that the thermal resistance and the thermal capacity of each layer of conductive medium are obtained, and the calculation process is simple.
According to the IGBT loss calculation method based on the product manual, the power loss expression in a unit switching period is obtained, and the method of superposing and synthesizing a plurality of rectangular waves is adopted to realize in Simulink simulation; aiming at the problem that the environmental temperature changes along with time, simulating the environmental temperature by adopting a controllable voltage source and adding the environmental temperature into a heat conduction model; and performing simulink simulation based on the heat conduction model, the power loss and the ambient temperature change, and obtaining the real-time temperature of the IGBT chip through simulation calculation.
The invention also discloses a real-time calculating system of the chip junction temperature based on the environmental temperature and the power loss, which comprises the following steps:
the building module is used for building a chip heat conduction model in a circuit form;
an identification module for identifying parameters in the heat conduction model;
the calculation module is used for calculating the power loss of the chip;
the adding module is used for adding the actual environment temperature value into the heat conduction model in the form of a controllable voltage source;
and the simulation module is used for obtaining the real-time temperature of the chip through the simulation calculation of the heat conduction model.
The real-time calculation system of the chip junction temperature based on the ambient temperature and the power loss is used for executing the method, and has the advantages of the method.
The invention further discloses a computer readable storage medium having a computer program stored thereon, characterized in that the computer program, when executed by a processor, performs the steps of the method for real-time calculation of the chip junction temperature based on ambient temperature and power loss as described above.
The invention also discloses a computer device comprising a memory and a processor, wherein the memory stores a computer program, and the computer program is characterized in that the computer program executes the steps of the method for calculating the junction temperature of the chip in real time based on the ambient temperature and the power loss when the computer program is executed by the processor.
All or part of the flow of the method of the embodiments may be implemented by a computer program, which may be stored in a computer-readable storage medium and executed by a processor, to implement the steps of the embodiments of the methods. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer readable medium may include: any entity or device capable of carrying computer program code, recording medium, U.S. disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution media, and the like. The memory may be used to store computer programs and/or modules, and the processor may perform various functions by executing or executing the computer programs and/or modules stored in the memory, as well as by invoking data stored in the memory. The memory may include high speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one magnetic disk storage device, a Flash memory device, or other volatile solid state storage device.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (11)
1. A method for calculating the junction temperature of a chip in real time based on ambient temperature and power loss is characterized by comprising the following steps:
1) constructing a chip heat conduction model in a circuit form;
2) identifying parameters in the heat conduction model;
3) calculating the power loss of the chip;
4) adding the actual environment temperature value into the heat conduction model in the form of a controllable voltage source;
5) and (4) obtaining the real-time temperature of the chip through the simulation calculation of the heat conduction model.
2. The method for calculating the chip junction temperature based on the ambient temperature and the power loss in real time according to claim 1, wherein in the step 1), in the process of constructing the chip heat conduction model in a circuit mode, a heat source is equivalent to a current source, the temperature is equivalent to voltage, a thermal resistance is equivalent to a resistance, and the thermal capacity is equivalent to a capacitance.
3. The method for calculating the chip junction temperature based on the ambient temperature and the power loss in real time as claimed in claim 1, wherein in the step 2), the impedance Z of the heat conduction path in the heat conduction modelthAs shown in the following formula:
Zth＝(sC1+(R1+(sC2+(R2+(sC3+(R3+(sC4+(R4+(sC5+(R5+(sC6+(R6+(sC7+R7-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1)-1
wherein R is1Is the chip thermal resistance, R2Is the thermal resistance of silicon wafer, R3Is a ceramic thermal resistance, R4Is the substrate thermal resistance, R5Is thermal resistance of heat-conducting adhesive, R6Is the coolant thermal resistance, R7Is the heat sink thermal resistance; wherein C is1Is the chip heat capacity, C2Is the heat capacity of the silicon wafer, C3Is the heat capacity of the ceramic C4Is the substrate heat capacity, C5For heat capacity of the heat-conducting glue, C6To the heat capacity of the cooling liquid, C7Is the heat capacity of the radiator;
after a simplified finishing to obtain
Wherein b is0～b7Is represented by R1～R7A function expression of c0～c7Is represented as C1～C7Is used for the functional expression of (1).
4. The method for real-time calculation of chip junction temperature based on ambient temperature and power loss as claimed in claim 3, wherein R is1～R7And C1～C7The identification process comprises the following steps:
step response C (t) is obtained through experiments, wherein C (t) is a function of temperature and time and can be obtained through temperature measurement; wherein
AiAndaiobtained by curve fitting and obtained by Laplace transform
Transfer function
Wherein A isiAnd ai(i ═ 0,1,2,3,4,5,6,7) is a known number;
according to the definition of the transfer function, there is G(s) ═ ZthThe fractional coefficients are made equal, and the simultaneous equations can be solved to obtain R1～R7And C1～C7。
5. The method for calculating the chip junction temperature based on the ambient temperature and the power loss in real time as claimed in any one of claims 1 to 4, wherein in the step 3), the power loss comprises an on-state loss Ploss_onOff-state losses and switching losses; in which the switching loss can be divided into a turn-on loss Ploss_sonAnd turn-off loss Ploss_soff。
6. The method for calculating the chip junction temperature based on the ambient temperature and the power loss in real time as claimed in claim 5, wherein the calculation process of the power loss is as follows:
obtaining single turn-on loss energy E of chip by looking up product manual and combining working currentsonTurn-off loss energy EsoffOn time TsonAnd off time TsoffCalculating the turn-on loss Ploss_sonAnd turn-off loss Ploss_soffAs shown in the following equation:
according to the control strategy, the working switching frequency f and the on-state time T of the chip can be knownonAnd off-state time ToffCalculating the on-time TsonOff time TsoffOn time TonAnd off-state time ToffThe duty cycle D over the entire switching period is shown by the following equation:
Dson＝Tson*f
Dsoff＝Tsoff*f
Don＝Ton*f
Doff＝Toff*f
finally calculating the power loss P in the single switching period TlossCan be expressed as:
power loss PlossCan be obtained by superposing and synthesizing three rectangular waves with the amplitude of Ploss_son、Ploss_onAnd Ploss_soff(ii) a Duty ratio of Dson、DonAnd DsoffThe period is T, and the time delay is 0 and T respectivelysonAnd Ton+Tson。
7. The method for calculating the chip junction temperature based on the ambient temperature and the power loss in real time as claimed in claim 6, wherein the on-state loss can be obtained by the formula: ploss_onOperating current is reduced by conduction voltage; wherein the working current can be obtained by monitoring, and the conduction voltage drop can be obtained by looking up a product manual and combining the working current.
8. The method for calculating the chip junction temperature based on the ambient temperature and the power loss in real time according to any one of claims 1 to 4, wherein in the step 4), a time sequence of the temperature is constructed according to the actual ambient temperature value, and the time sequence is added to the heat conduction model of the current transformer in the form of a controllable voltage source.
9. A real-time calculation system for chip junction temperature based on ambient temperature and power loss, comprising:
the building module is used for building a chip heat conduction model in a circuit form;
an identification module for identifying parameters in the heat conduction model;
the calculation module is used for calculating the power loss of the chip;
the adding module is used for adding the actual environment temperature value into the heat conduction model in the form of a controllable voltage source;
and the simulation module is used for obtaining the real-time temperature of the chip through the simulation calculation of the heat conduction model.
10. A computer-readable storage medium, having a computer program stored thereon, wherein the computer program, when executed by a processor, performs the steps of the method for real-time calculation of chip junction temperature based on ambient temperature and power loss according to any one of claims 1 to 8.
11. A computer device comprising a memory and a processor, the memory having stored thereon a computer program, wherein the computer program, when executed by the processor, performs the steps of the method for real-time calculation of chip junction temperature based on ambient temperature and power dissipation according to any one of claims 1 to 8.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115081257A (en) * | 2022-08-22 | 2022-09-20 | 中诚华隆计算机技术有限公司 | Chip loss optimization method and system for electric power energy |
| CN116502577A (en) * | 2023-06-28 | 2023-07-28 | 湖南大学 | IGBT chip internal temperature modeling method, device and storage medium |
| CN117494656A (en) * | 2024-01-02 | 2024-02-02 | 北京经纬恒润科技股份有限公司 | Modeling method and device for chip junction temperature thermal resistance model |
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| CN116502577B (en) * | 2023-06-28 | 2023-11-17 | 湖南大学 | IGBT chip internal temperature modeling method, device and storage medium |
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