CN110427660B - Simulation method of high-voltage direct-current circuit breaker - Google Patents

Simulation method of high-voltage direct-current circuit breaker Download PDF

Info

Publication number
CN110427660B
CN110427660B CN201910636674.3A CN201910636674A CN110427660B CN 110427660 B CN110427660 B CN 110427660B CN 201910636674 A CN201910636674 A CN 201910636674A CN 110427660 B CN110427660 B CN 110427660B
Authority
CN
China
Prior art keywords
equivalent
voltage source
power module
controllable switch
branch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910636674.3A
Other languages
Chinese (zh)
Other versions
CN110427660A (en
Inventor
韩坤
户永杰
范彩云
刘晨阳
胡秋玲
张志刚
刘路路
王宇丁
李旭升
宗炫君
邹盛
周洪伟
姚艳芳
王春生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
State Grid Corp of China SGCC
Xuji Group Co Ltd
XJ Electric Co Ltd
Economic and Technological Research Institute of State Grid Jiangsu Electric Power Co Ltd
Original Assignee
State Grid Corp of China SGCC
Xuji Group Co Ltd
XJ Electric Co Ltd
Economic and Technological Research Institute of State Grid Jiangsu Electric Power Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by State Grid Corp of China SGCC, Xuji Group Co Ltd, XJ Electric Co Ltd, Economic and Technological Research Institute of State Grid Jiangsu Electric Power Co Ltd filed Critical State Grid Corp of China SGCC
Priority to CN201910636674.3A priority Critical patent/CN110427660B/en
Publication of CN110427660A publication Critical patent/CN110427660A/en
Application granted granted Critical
Publication of CN110427660B publication Critical patent/CN110427660B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/60Arrangements for transfer of electric power between AC networks or generators via a high voltage DC link [HVCD]

Abstract

The invention relates to a simulation method of a high-voltage direct-current circuit breaker, and belongs to the technical field of direct-current power transmission. The simulation method comprises the following steps: each power module on a transfer branch of the direct current breaker is equivalent to a branch voltage source, an equivalent resistor and a branch stray inductor which are sequentially connected in series; and the transfer branch circuit is equivalent to a total voltage source and a total stray inductance which are connected in series according to the number N of the power modules which are connected in series on the transfer branch circuit, wherein the total voltage source is the sum of the voltages of the N branch voltage sources and the N equivalent resistors, and the total stray inductance is the sum of the N branch stray inductances. The invention finally enables all power modules on the transfer branch circuit to be equivalent to a total voltage source and a total stray inductance which are connected in series, the equivalent circuit is simple, the breaking process of the high-voltage direct-current circuit breaker is accurately described on the premise of not reducing the simulation rate, and the simulation accuracy of the circuit breaker is improved.

Description

Simulation method of high-voltage direct-current circuit breaker
Technical Field
The invention relates to a simulation method of a high-voltage direct-current circuit breaker, and belongs to the technical field of direct-current power transmission.
Background
Direct current circuit breaker has three as the comparatively ripe topological structure of assurance flexible direct current system reliable operation at present technique: mechanical direct current circuit breakers based on fast mechanical switching, all-solid-state circuit breakers based on power electronics and hybrid direct current circuit breakers. The mechanical circuit breaker has long on-off time, the all-solid-state circuit breaker has large on-state loss and high cost, and the hybrid direct-current circuit breaker combining the characteristics of the mechanical circuit breaker and the all-solid-state circuit breaker becomes the mainstream of the field of high-voltage direct-current power transmission.
As shown in fig. 1, a hybrid dc circuit breaker generally includes three dc current paths, a main branch, a transfer branch and an energy consumption branch. The main branch circuit is composed of a group of quick mechanical switches connected in series and a plurality of power modules connected in series and parallel, the transfer branch circuit is composed of a large number of power modules connected in series, and the energy consumption branch circuit is a lightning arrester or a nonlinear resistor. The power module is generally a switching device (such as an IGBT, a thyristor, a diode, etc.) or a specific switching tube topology (such as a full bridge, a half bridge, etc.).
The current direct current breaker modeling method mainly comprises the following two technical routes. In the first method, a dc breaker in a flexible dc power grid is equivalent to a breaker with a function, that is, after the breaker receives a breaking instruction, the breaker is broken after a period of time (related to the breaking time of the breaker) is delayed. The modeling method cannot effectively simulate the breaking process of the circuit breaker, and the electromagnetic transient characteristics of internal electronic devices cannot be described. And in the second method, a detailed circuit breaker simulation model is built according to a circuit breaker topological structure. The method can accurately describe the breaking process of the breaker and the transient characteristics of internal electronic devices, but the simulation efficiency of the flexible direct current power grid system is greatly influenced because the modeling contains a large number of power electronic devices.
Therefore, the chinese patent application publication No. CN 109687412A discloses a method and an apparatus for simulating a dc circuit breaker, in which a diode full-bridge module is used to simulate all IGBT full-bridge submodules of a transfer branch (four bridge arms of the diode full-bridge module are each formed by a diode), and the method can reduce the calculation amount in real-time simulation and improve the simulation speed. However, in the breaking process of the circuit breaker, the voltage and current interaction process is short, the stray parameters generate great di/dt in the process, higher voltage can be generated on the capacitor in the branch power module, the power module is seriously broken down, and therefore the size of the stray parameters is strictly limited in the product development process. The simulation method in the application document cannot accurately describe the influence of the equipment stray parameters on the breaking process, and cannot reflect the electrical stress of an internal device of a single sub-module in the breaking process, so that the design and improvement of an actual product cannot be guided when the actual product of the circuit breaker is designed, and the accuracy of the simulation method is low. In addition, stray parameters can influence the commutation time, the commutation time is an important index for examining the technical level of the high-voltage direct-current circuit breaker product, and the method cannot describe the influence of the stray parameters on the commutation time.
Disclosure of Invention
The invention aims to provide a simulation method of a high-voltage direct-current circuit breaker, which is used for solving the problem of low accuracy of the existing simulation method.
In order to achieve the above object, the present invention provides a simulation method for a high voltage dc circuit breaker, which comprises the following steps:
each power module on a transfer branch of the direct current breaker is equivalent to a branch voltage source, an equivalent resistor and a branch stray inductor which are sequentially connected in series;
and the transfer branch circuit is equivalent to a total voltage source and a total stray inductance which are connected in series according to the number N of the power modules which are connected in series on the transfer branch circuit, wherein the total voltage source is the sum of the voltages of the N branch voltage sources and the N equivalent resistors, and the total stray inductance is the sum of the N branch stray inductances.
The beneficial effects are that: according to the invention, stray parameters are added into an equivalent model adopted in the modeling simulation process of the breaker, the stray parameters are equivalent to stray inductances, and finally all power modules on a transfer branch are equivalent to a total voltage source and a total stray inductance which are connected in series. Meanwhile, the influence of stray inductance on the commutation time can be accurately described, the product technical level of the circuit breaker can be further simulated, and the design of the product can be further guided.
Further, the equivalent process of the power module, which is equivalent to a branch voltage source, an equivalent resistor and a branch stray inductor connected in series in sequence, is as follows: discretizing each power module based on a retreating Euler method to obtain an accompanying circuit of the power module, and carrying out Thevenin equivalence on the accompanying circuit to obtain an equivalent voltage source, an equivalent resistor and a branch stray inductor which are sequentially connected in series; in the accompanying circuit, a semiconductor switch in a power module is equivalent to a variable resistor according to the state of the semiconductor switch, stray parameters in the power module are equivalent to variable inductance according to the state of a controllable switch in the semiconductor switch, and a capacitor in the power module is equivalent to an equivalent voltage source and a resistor based on a history state according to the state of the controllable switch in the semiconductor switch; the Thevenin is equivalent to: the variable resistance and the resistance in the accompanying circuit are equivalent to equivalent resistance, an equivalent voltage source is equivalent to a branch voltage source, and the variable inductance is equivalent to a branch stray inductance.
Further, the calculation formula of the total voltage source and the total stray inductance is as follows:
Figure BDA0002130467330000031
wherein, V CE (t) is the output voltage of the total voltage source at time t, V ceq (t) is the output voltage of the partial voltage source at time t, R ceq (t) is the resistance value of each equivalent resistor at time t, I c (t) at time t, the current flowing through each equivalent resistor is the same, L re (t) is the inductance of the total stray inductance at time t, L r And (t) is the inductance of the stray inductor at time t.
Further, in the power module, if the time t is the time when the controllable switch is turned on, the corresponding calculation formula of the partial voltage source is as follows:
Figure BDA0002130467330000032
wherein, V ceq (t) is the voltage value of the partial voltage source when the controllable switch is turned on, R on Is the on-resistance, R, of a controllable switch in a power module ce When the controllable switch is turned on, the equivalent resistance of the capacitor and the diode connected in series in the power module is delta T as the simulation step length, V ce (T- Δ T) is the voltage value of the equivalent voltage source based on the capacitance in the history state when the controllable switch is turned on.
Further, in the power module, if the time t is the time when the controllable switch is turned off, the corresponding calculation formula of the sub-voltage source is as follows:
V ceq (t)=V ce (t-ΔT),
wherein, V ceq (T) is the voltage value of the partial voltage source when the controllable switch is turned off, delta T is the simulation step length, V ce (T- Δ T) is based onAnd when the controllable switch is turned off, the voltage value of the equivalent voltage source of the capacitor in the historical state.
Further, in the power module, if the time t is the time when the controllable switch is turned on, the corresponding calculation formula of the equivalent resistance is as follows:
R ceq =R deq +R ce //R on
wherein R is ceq Is the resistance value, R, of the equivalent resistor when the controllable switch is turned on deq Is the equivalent resistance of a diode full bridge.
Further, in the power module, if the time t is the time when the controllable switch is turned off, the corresponding calculation formula of the equivalent resistance is as follows:
R ceq =R deq +R ce
wherein R is ceq Is the resistance value of the equivalent resistor R when the controllable switch is turned off ce The equivalent resistance R of the capacitor and the diode connected in series with the capacitor when the controllable switch is turned off deq Is the equivalent resistance of a diode full bridge.
Further, when the controllable switch in the power module is turned on, the corresponding stray inductance calculation formula is as follows:
L r (t)=L ron
when the controllable switch in the power module is turned off, the corresponding stray inductance calculation formula is as follows:
L r (t)=L roff
wherein L is r (t) is the inductance of the stray inductance at time t, L ron The inductance value of the stray inductor, L, when the controllable switch is switched on roff The inductance value of the time-division stray inductance is switched off for the controllable switch.
Drawings
Fig. 1 is a schematic diagram of a hybrid dc circuit breaker topology in the prior art;
FIG. 2 is a circuit diagram of an equivalent process of a power module according to the present invention;
FIG. 3 is a flow chart of a simulation implementation of the power module modeling method provided by the present invention;
FIG. 4 is a graph comparing the capacitance voltage of the simulation model provided by the present invention in the breaking process with the simulation accuracy of the capacitance voltage of the detailed model in the breaking process;
fig. 5 is a graph of voltage waveforms across stray inductances of a power module according to the present invention.
Detailed Description
The embodiment of the simulation method of the high-voltage direct-current breaker comprises the following steps:
the main concept of the simulation method for the high-voltage direct-current circuit breaker provided by the embodiment is as follows:
firstly, discretizing each power module in a transfer branch circuit in an electromagnetic transient simulation environment based on a backward Euler method to obtain an accompanying circuit of the power module. In the power module, a semiconductor switch (including a controllable switch and a diode, where the controllable switch is an IGBT in this embodiment, and the specific implementation of the controllable switch is not limited in the present invention) is equivalent to a variable resistor according to its on-off state, a stray parameter is equivalent to a variable inductor according to the on-off state of the IGBT, and a capacitor is equivalent to an equivalent voltage source and a resistor based on a history state;
secondly, carrying out Thevenin equivalence on an accompanying circuit of each power module based on the historical state, wherein each power module is equivalent to a branch voltage source, an equivalent resistor and a branch stray inductor which are connected in series;
and finally, according to the number of the power modules, equating all the equivalent power modules again to be equivalent to a total voltage source and a total stray inductance which are connected in series, and further simulating the high-voltage direct-current circuit breaker based on the final equivalent circuit.
The specific simulation process is as follows:
1) Discretizing the power module in an electromagnetic transient simulation environment based on a backward Euler method to obtain an accompanying circuit of the power module. As shown in fig. 2, the power module includes a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a capacitor C and an IGBT, the diode D1 is equivalent to a resistor R1, the diode D2 is equivalent to a resistor R2, the diode D3 is equivalent to a resistor R3, the diode D4 is equivalent to a resistor R5, the diode D5 is equivalent to a resistor R5, and the capacitor C is equivalent to a resistor R connected in series c And a voltage source V ce IGBT is equivalent to a resistor R6, and stray parameters are equivalent to a stray inductance L r
The specific calculation process is as shown in fig. 3, and the equivalent resistance of the diode is calculated according to the direction of the current i: when the current i flowing through the power module is larger than or equal to 0, R1= R4= R Don ,R2=R3=R Doff (ii) a When the current i flowing through the power module is less than 0, when R1= R4= R Doff ,R2=R3=R Don Wherein R is Don Resistance when the diode is connected into the circuit, on-resistance, R Doff The resistance of the diode is off-state resistance when the diode is not connected into the circuit, and the off-state resistance of the device in engineering practice is far greater than the on-state resistance (typical value of the on-state resistance is 0.01 omega, and the off-state resistance is 10) 6 Omega), therefore, the off-state resistor is processed according to an open circuit, namely, the circuit is not connected, namely, when i is more than or equal to 0, the resistor R1 and the resistor R4 are connected into the circuit, the resistor R2 and the resistor R3 are not connected into the circuit, when i is less than 0, the resistor R1 and the resistor R4 are not connected into the circuit, and the resistor R2 and the resistor R3 are connected into the circuit.
The equivalent resistance R5 is related to the switching state of the IGBT, i.e. when the IGBT is on, R5= R Doff (ii) a When IGBT is off, R5= R Don
Meanwhile, the IGBT equivalent resistance R6 and the branch stray inductance L are calculated according to the on-off state of the IGBT r When the IGBT is on, R6= R on ,L r =L ron When the IGBT is off, R6= R off ,L r =L roff Wherein R is on ,L ron When the IGBT is conducted, the on-state resistance and the stray inductance of the IGBT are respectively measured; r off ,L roff When the IGBT is turned off, the off-state resistance and the stray inductance of the IGBT are respectively set; typical values for on-resistance and off-resistance of IGBTs are 0.01 omega and 10, respectively 6 Omega, according to the actual engineering, in the power module, the stray inductance of the capacitor branch is 0.12 muH, the stray inductance of the IGBT branch is 0.2 muH, and the stray inductance of the incoming line and the outgoing line of the power module is 0.06 muH, so L ron =0.26μH,L roff =0.18μH。
According to the Backward Euler method, capacitance C is equal based on historical stateEffect parameter (resistance R) c And a voltage source V ce ) And (3) calculating:
Figure BDA0002130467330000061
V ce (t-ΔT)=V c (t-ΔT);
V c (t)=I c (t)R c +V ce (t-ΔT);
wherein, V c (t) is the voltage values of the equivalent voltage source and the equivalent resistance of the capacitor at time t, R c Is Thevenin equivalent resistance (equivalent resistance of capacitor), Δ T is simulation step length, I c (t) is the current through the capacitor, V c (T- Δ T) is the voltage value of the equivalent voltage source and the equivalent resistance of the last step capacitor at time T, V ce (T- Δ T) is the voltage value of the equivalent voltage source based on the capacitance of the history state (i.e., the previous step length) at time T.
2) Considering that part of the resistors are not connected into the circuit due to different directions of the current, after the open circuit treatment, the further equivalent resistors in the circuit are as follows:
R deq = (R1 + R4) or (R2 + R3) =2R Don ;R deq I.e. the equivalent resistance of the diode full bridge;
R ce =R c + R5, when IGBT is on, R ce =R c +R Doff (ii) a When IGBT is turned off, R ce =R c +R Don ,R ce I.e. the equivalent resistance of the capacitor and its series diode in the power module.
3) Carrying out equivalence on the equivalent circuit in the step 2) according to the Thevenin theory, wherein the equivalence is a series-connected partial voltage source V ceq Equivalent resistance R ceq And branch stray inductance L r And calculating the voltage distribution source V when the IGBT is conducted ceq Equivalent resistance R ceq And branch stray inductance L r And calculating the partial voltage source V when the IGBT is turned off ceq Equivalent resistance R ceq And branch stray inductance L r While I is c The relation between (t) and i (t) is expressed as:
Figure BDA0002130467330000062
when the IGBT is conducted, the corresponding voltage distribution source V ceq The formula for (t) is:
Figure BDA0002130467330000063
when the IGBT is turned off, the corresponding voltage distribution source V ceq The formula for (t) is:
V ceq (t)=V ce (t-ΔT),
when the IGBT is conducted, the corresponding equivalent resistance R ceq The calculation formula of (2) is as follows:
R ceq =R deq +R ce //R on
when the IGBT is turned off, the corresponding equivalent resistance R ceq The calculation formula of (2) is as follows:
R ceq =R deq +R ce
when the IGBT is turned on and off, the corresponding stray inductance is introduced above.
4) Based on the equivalent circuit of each power module in the step 3), all the power modules on the transfer branch are equivalent to be a total voltage source V connected in series CE And total stray inductance L re And calculating the total voltage source V CE And total stray inductance L re
Assuming that N power modules are connected in series on the transfer branch, the total voltage source V CE And total stray inductance L re The formula for calculation of (t) is:
Figure BDA0002130467330000071
wherein, V CE (t) is the output voltage of the total voltage source at time t, V ceq (t) is the output voltage of the partial voltage source at time t, R ceq (t) is the resistance value of each equivalent resistor at time t, I c (t) is the current flowing through each equivalent resistance at time t,the current of each equivalent resistor is the same, i.e. the current flowing through the capacitor, L re (t) is the inductance of the total stray inductance at time t, L r (t) is the inductance of the stray inductance at time t.
At different time t, states of the IGBTs in the power modules are different, including two states of IGBT conduction and IGBT shutdown, so that the corresponding total voltage source V CE And total stray inductance L re (t) is different.
5) And repeating the calculation process until the simulation is completed to obtain the results shown in the figures 4 and 5.
Fig. 4 is a comparison of the accuracy of the transfer branch capacitance voltage of the equivalent model of the high-voltage direct-current circuit breaker established according to the method in the breaking process and the detailed model in the prior art. Because the breaking process of the circuit breaker is a process for charging the transfer branch capacitor, the equivalent process of the whole power module is to accurately describe the change of the capacitor voltage in the power module. After the breaking is finished, the capacitance voltage of the equivalent model is 2879.8V, the capacitance voltage of the detailed model is 2894.8V, and the precision error is 0.5%, so that the precision of the method is proved.
Fig. 5 shows the voltage waveforms across the stray inductance during commutation of the equivalent model of the high-voltage dc breaker built according to the above method. The commutation time is 5.7 mu s, and the maximum voltage at two ends of the stray inductance of a single power module is 240V, which proves that the method can simulate the influence of the stray inductance on the commutation time.

Claims (8)

1. A simulation method for a high-voltage direct-current circuit breaker is characterized by comprising the following steps:
each power module on a transfer branch of the direct current breaker is equivalent to a branch voltage source, an equivalent resistor and a branch stray inductor which are sequentially connected in series;
and the transfer branch circuit is equivalent to a total voltage source and a total stray inductance which are connected in series according to the number N of the power modules which are connected in series on the transfer branch circuit, wherein the total voltage source is the sum of the voltages of the N branch voltage sources and the N equivalent resistors, and the total stray inductance is the sum of the N branch stray inductances.
2. The simulation method of the high-voltage direct-current circuit breaker according to claim 1, wherein the equivalent process of the power module, which is equivalent to a branch voltage source, an equivalent resistor and a branch stray inductor connected in series in sequence, is as follows: discretizing each power module based on a retreating Euler method to obtain an accompanying circuit of the power module, and carrying out Thevenin equivalence on the accompanying circuit, wherein the accompanying circuit is equivalent to a sub-voltage source, an equivalent resistor and a sub-stray inductor which are sequentially connected in series; in the accompanying circuit, a semiconductor switch in a power module is equivalent to a variable resistor according to the state of the semiconductor switch, stray parameters in the power module are equivalent to variable inductance according to the state of a controllable switch in the semiconductor switch, and a capacitor in the power module is equivalent to an equivalent voltage source and a resistor based on a history state according to the state of the controllable switch in the semiconductor switch; the Thevenin is equivalent to: the variable resistance and the resistance in the accompanying circuit are equivalent to equivalent resistance, an equivalent voltage source is equivalent to a branch voltage source, and the variable inductance is equivalent to a branch stray inductance.
3. The simulation method for the hvdc breaker of claim 1 or 2, wherein the total voltage source and the total stray inductance are calculated by the following formula:
Figure FDA0003908076040000011
L re (t)=NL r (t),
wherein, V CE (t) is the output voltage of the total voltage source at time t, V ceq (t) is the output voltage of the partial voltage source at time t, R ceq (t) is the resistance value of each equivalent resistor at time t, I c (t) is the current flowing through each equivalent resistor at time t, the current of each equivalent resistor is the same, L re (t) is the inductance of the total stray inductance at time t, L r (t) is the inductance of the stray inductance at time t.
4. The simulation method for the high-voltage direct current circuit breaker according to claim 3, wherein in the power module, if the time t is the time when the controllable switch is turned on, the corresponding calculation formula of the branch voltage source is as follows:
Figure FDA0003908076040000012
wherein, V ceq ( t ) When the controllable switch is turned on, the voltage value of the partial voltage source, R on Is the on-resistance, R, of a controllable switch in a power module ce (T) is the equivalent resistance of the capacitor and its series diode in the power module when the controllable switch is turned on, Δ T is the simulation step length, V ce (T- Δ T) is the voltage value of the equivalent voltage source of the capacitor based on the history state when the controllable switch is turned on.
5. The simulation method for the hvdc breaker of claim 3, wherein in the power module, if the time t is the time when the controllable switch is turned off, the corresponding calculation formula of the sub-voltage source is as follows:
V ceq (t)=V ce (t-ΔT),
wherein, V ceq (T) is the voltage value of the partial voltage source when the controllable switch is turned off, delta T is the simulation step length, V ce (T- Δ T) is the voltage value of the equivalent voltage source of the capacitor based on the history state when the controllable switch is turned off.
6. The simulation method for the HVDC breaker of claim 4, wherein in the power module, if the time t is the time when the controllable switch is turned on, the corresponding calculation formula of the equivalent resistance is as follows:
R ceq (t)=R deq +R ce (t)//R on
wherein R is ceq (t) is the resistance value of the equivalent resistor R when the controllable switch is turned on deq Is the equivalent resistance of a diode full bridge.
7. The simulation method for the HVDC breaker of claim 5, wherein in the power module, if the time t is the time when the controllable switch is turned off, the corresponding calculation formula of the equivalent resistance is as follows:
R ceq (t)=R deq +R ce (t),
wherein R is ceq (t) is the resistance value of the equivalent resistor R when the controllable switch is turned off ce (t) is the equivalent resistance of the capacitor and its series diode, R, when the controllable switch is turned off deq Is the equivalent resistance of a full bridge of diodes.
8. The simulation method for the high-voltage direct current circuit breaker according to claim 3, wherein when the controllable switch in the power module is turned on, the corresponding stray inductance calculation formula is as follows:
L r (t)=L ron
when the controllable switch in the power module is turned off, the corresponding stray inductance calculation formula is as follows:
L r (t)=L roff
wherein L is r (t) is the inductance of the stray inductance at time t, L ron The inductance value, L, of the stray inductor when the controllable switch is switched on roff The inductance value of the time-division stray inductance is switched off for the controllable switch.
CN201910636674.3A 2019-07-15 2019-07-15 Simulation method of high-voltage direct-current circuit breaker Active CN110427660B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910636674.3A CN110427660B (en) 2019-07-15 2019-07-15 Simulation method of high-voltage direct-current circuit breaker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910636674.3A CN110427660B (en) 2019-07-15 2019-07-15 Simulation method of high-voltage direct-current circuit breaker

Publications (2)

Publication Number Publication Date
CN110427660A CN110427660A (en) 2019-11-08
CN110427660B true CN110427660B (en) 2022-12-23

Family

ID=68409540

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910636674.3A Active CN110427660B (en) 2019-07-15 2019-07-15 Simulation method of high-voltage direct-current circuit breaker

Country Status (1)

Country Link
CN (1) CN110427660B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111177949A (en) * 2020-01-17 2020-05-19 重庆大学 Broadband model establishing method for hybrid high-voltage direct-current circuit breaker

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014064000A1 (en) * 2012-10-22 2014-05-01 Alstom Technology Ltd Test circuit for a high-voltage direct current circuit breaker
CN104635151A (en) * 2014-12-29 2015-05-20 国家电网公司 Cascade full-bridge direct-current circuit breaker low-voltage equivalent test circuit and detection method thereof
CN105807214A (en) * 2014-12-29 2016-07-27 国家电网公司 Breaking test device and test method for high-voltage direct current breaker
CN107526030A (en) * 2017-07-05 2017-12-29 全球能源互联网研究院 The synthetic test equipment and method of a kind of high voltage DC breaker
CN108429244A (en) * 2018-02-07 2018-08-21 许继电气股份有限公司 A kind of electronic switch and hybrid high voltage DC breaker
CN108509699A (en) * 2018-03-19 2018-09-07 武汉船用电力推进装置研究所(中国船舶重工集团公司第七二研究所) It is middle to press hybrid dc circuit breaker breaking course simulator and emulation mode
CN109687412A (en) * 2019-01-03 2019-04-26 许继电气股份有限公司 A kind of dc circuit breaker emulation mode and device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014064000A1 (en) * 2012-10-22 2014-05-01 Alstom Technology Ltd Test circuit for a high-voltage direct current circuit breaker
CN104635151A (en) * 2014-12-29 2015-05-20 国家电网公司 Cascade full-bridge direct-current circuit breaker low-voltage equivalent test circuit and detection method thereof
CN105807214A (en) * 2014-12-29 2016-07-27 国家电网公司 Breaking test device and test method for high-voltage direct current breaker
CN107526030A (en) * 2017-07-05 2017-12-29 全球能源互联网研究院 The synthetic test equipment and method of a kind of high voltage DC breaker
CN108429244A (en) * 2018-02-07 2018-08-21 许继电气股份有限公司 A kind of electronic switch and hybrid high voltage DC breaker
CN108509699A (en) * 2018-03-19 2018-09-07 武汉船用电力推进装置研究所(中国船舶重工集团公司第七二研究所) It is middle to press hybrid dc circuit breaker breaking course simulator and emulation mode
CN109687412A (en) * 2019-01-03 2019-04-26 许继电气股份有限公司 A kind of dc circuit breaker emulation mode and device

Also Published As

Publication number Publication date
CN110427660A (en) 2019-11-08

Similar Documents

Publication Publication Date Title
CN103116665B (en) A kind of MMC topological transformation device high-efficiency electromagnetic transient emulation method
CN107609283B (en) Modular multilevel converter efficient modeling method based on equivalent capacitance of bridge arm
CN106777636B (en) Block parallel method for micro-grid electromagnetic transient real-time simulation
CN108229021B (en) Blocking modeling method of modular multilevel converter based on real-time digital simulator
CN108536949B (en) LCC-HVDC simulation model based on inductance/capacitance switch model and parameter optimization method
CN108631632B (en) MMC instantaneous power loss calculation method based on virtual bridge arm mathematical model
CN103605850B (en) A kind of MMC equivalent modeling methods with submodule blocking function
CN103593520A (en) Equivalent simulation calculation modeling method for modularized multi-level converter
CN104036066A (en) Method for simulating DC short circuit working condition of half-bridge type modular multi-level converter
Zhang et al. DC pole-to-pole short-circuit behavior analysis of modular multilevel converter
CN104615842A (en) Loss calculation method for power devices of full-bridge modular multi-level converter
CN105785976A (en) Test method of control protection device in flexible direct current transmission and system thereof
CN109687412B (en) Direct current breaker simulation method and device
CN110427660B (en) Simulation method of high-voltage direct-current circuit breaker
CN103929088A (en) Average value model of MMC
CN107257205B (en) A kind of MMC power module nonlinear characteristic simulation model
CN109033560B (en) Simulation method of power electronic circuit
CN110323721B (en) Mechanical self-oscillation type direct current breaker, parameter determination method and device
Ji et al. Active voltage balancing control for 10kV three-level converter using series-connected HV-IGBTs
CN107994573B (en) Multi-objective optimization design method for multi-terminal flexible direct current power transmission system
CN113158617B (en) General decoupling method and system for electromagnetic transient simulation of voltage source type converter
CN112001142B (en) Real-time simulation method of half-bridge type modular multilevel converter
CN112787345B (en) Simulation system and simulation method of direct current circuit breaker
CN110071649B (en) Electromagnetic transient simulation system for power module of cascaded H-bridge type power electronic transformer
Liqiang et al. The IGCT test platform for voltage source inverters

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant