CN109033560B - Simulation method of power electronic circuit - Google Patents
Simulation method of power electronic circuit Download PDFInfo
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Abstract
The invention discloses a simulation method of a power electronic circuit, which comprises the following steps: dividing a power electronic circuit into a power frequency circuit and a high-frequency switch circuit; modeling the divided power electronic circuit; carrying out simulation calculation on the modeled power frequency circuit equivalent model by adopting a computer to obtain the output current and the output voltage of the power frequency circuit; carrying out simulation calculation on the modeled high-frequency switch circuit equivalent model by adopting an FPGA (field programmable gate array) calculating device to obtain the output current and the output voltage of the high-frequency switch circuit; and alternately transmitting the simulation calculation result of the computer and the simulation calculation result of the FPGA calculation device. The simulation method of the power electronic circuit can effectively solve the problems that in the prior art, the segmentation step and the simulation process are complex, interference factors are easy to introduce, the simulation cost is high, and alternate simulation calculation cannot be realized.
Description
Technical Field
The invention relates to the technical field of simulation of power electronic circuits, in particular to a simulation method of a power electronic circuit.
Background
Circuit simulation refers to an engineering method that uses a mathematical model to simulate the true behavior of a circuit. The simulation system can simulate the functional behavior of the circuit without building an actual circuit. Before an actual circuit is constructed, the design is subjected to simulation verification, so that the design efficiency can be greatly improved, and the time and the economic cost are saved.
At present, in the field of simulation of power electronic circuits, CPU (central processing unit) simulation is mainly used. The simulation system has the advantages of simple operation, high maturity, low complexity and the like, and is widely applied. With the increase of the capacity and the number of the power electronic circuits, the complexity and the conversion frequency of the circuits are continuously increased, and the requirements on the circuit simulation system are higher and higher. The CPU-based simulation system cannot realize high-speed real-time simulation with a small step length due to hardware architecture, serial execution mechanism, and the like, and at the same time, it is accompanied by a large communication delay, so that it cannot realize simulation of a complex circuit quickly and accurately.
In the prior art, the scheme for solving the problems generated by the simulation system based on the CPU is as follows:
a power electronic simulation system and method based on FPGA (field-programmable gate array). The simulation system divides a power electronic circuit into a plurality of sub-circuits, and simulates the sub-circuits respectively through the coupling connection of the plurality of FPGAs, thereby solving the problems generated by the simulation system based on CPU.
The inventor finds that the following technical problems exist in the prior art in the process of implementing the invention:
the power electronic circuit is divided into a plurality of sub-circuits, a plurality of division points need to be selected in the circuit, so that the division step and the simulation process are complex, and interference factors are easily introduced; a plurality of FPGA computing devices are adopted for simulation, so that the simulation cost is increased; in the simulation process, a plurality of FPGA computing devices cannot communicate with each other, and alternate simulation calculation cannot be realized.
Disclosure of Invention
The embodiment of the invention provides a simulation method of a power electronic circuit, which can effectively solve the problems that in the prior art, the segmentation step and the simulation process are complicated, interference factors are easy to introduce, the simulation cost is high, and alternate simulation calculation cannot be realized.
The embodiment of the invention provides a simulation method of a power electronic circuit, which comprises the following steps:
dividing a power electronic circuit into a power frequency circuit and a high-frequency switch circuit;
modeling the divided power electronic circuit;
carrying out simulation calculation on the modeled power frequency circuit equivalent model by using a computer to obtain the output current and the output voltage of the power frequency circuit;
carrying out simulation calculation on the modeled high-frequency switch circuit equivalent model by adopting an FPGA (field programmable gate array) calculating device to obtain the output current and the output voltage of the high-frequency switch circuit;
and alternately transmitting the simulation calculation result of the computer and the simulation calculation result of the FPGA calculation device.
As an improvement of the above, the power electronic circuit includes an energy storage element; the energy storage element is used as a dividing point to divide the power electronic circuit into the power frequency circuit and the high-frequency switch circuit.
As an improvement of the above scheme, the power frequency circuit includes a first ac power supply Ua, a second ac power supply Ub, a third ac power supply Uc, a three-phase reactor L, a capacitor C, and a load R; the high-frequency switch circuit comprises a first insulated gate bipolar transistor g1, a second insulated gate bipolar transistor g2, a third insulated gate bipolar transistor g3, a fourth insulated gate bipolar transistor g4, a fifth insulated gate bipolar transistor g5 and a sixth insulated gate bipolar transistor g6;
the emitter of the first insulated gate bipolar transistor g1 is connected with the collector of the second insulated gate bipolar transistor g 2;
the emitter of the third insulated gate bipolar transistor g3 is connected with the collector of the fourth insulated gate bipolar transistor g 4; the collector electrode of the third insulated gate bipolar transistor g3 is connected with the collector electrode of the first insulated gate bipolar transistor g 1; the emitter electrode of the fourth insulated gate bipolar transistor g4 is connected with the emitter electrode of the second insulated gate bipolar transistor g 2;
the emitter of the fifth insulated gate bipolar transistor g5 is connected with the collector of the sixth insulated gate bipolar transistor g6; the collector electrode of the fifth insulated gate bipolar transistor g5 is connected with the collector electrode of the third insulated gate bipolar transistor g 3; the emitter electrode of the sixth insulated gate bipolar transistor g6 is connected with the emitter electrode of the fourth insulated gate bipolar transistor g 4;
one end of a first group of coils of the three-phase reactor is connected between an emitter electrode of the first insulated gate bipolar transistor g1 and a collector electrode of the second insulated gate bipolar transistor g2, and the other end of the first group of coils is connected with a positive electrode of the first alternating current power supply Ua;
one end of a second group of coils of the three-phase reactor is connected between an emitter electrode of the third insulated gate bipolar transistor g3 and a collector electrode of the fourth insulated gate bipolar transistor g4, and the other end of the second group of coils of the three-phase reactor is connected with the positive electrode of the second alternating current power supply Ub;
one end of a third group of coils of the three-phase reactor is connected between an emitter of the fifth insulated gate bipolar transistor g5 and a collector of the sixth insulated gate bipolar transistor g6, and the other end of the third group of coils of the three-phase reactor is connected with the anode of the third alternating current power supply Uc;
the negative electrode of the first alternating current power supply Ua, the negative electrode of the second alternating current power supply Ub and the negative electrode of the third alternating current power supply Uc are connected;
the capacitor C is connected in parallel to the emitter of the fifth insulated gate bipolar transistor g5 and the two ends of the collector of the sixth insulated gate bipolar transistor g6;
and the load R is connected in parallel with two ends of the capacitor C.
As a modification of the above, the energy storage element includes a reactance and a capacitance.
As an improvement of the above solution, the specific method for modeling the divided power electronic circuit is as follows:
modeling the power frequency circuit in the power electronic circuit by an electromagnetic transient calculation method;
and modeling the high-frequency switch circuit in the power electronic circuit by a large-small resistance equivalent method.
As an improvement of the above solution, the specific method for alternately transmitting the simulation calculation result of the computer and the simulation calculation result of the FPGA computing device is as follows:
and carrying out one-time bidirectional communication in each simulation step of the simulation calculation, sending the output current and the output voltage of the power frequency circuit obtained by the simulation calculation of the computer to the FPGA calculation device, and sending the output current and the output voltage of the high-frequency switch circuit obtained by the simulation calculation of the FPGA calculation device to the computer.
Compared with the prior art, the simulation method of the power electronic circuit provided by the embodiment of the invention has the following beneficial effects:
the power electronic circuit is divided into two sub-circuits, so that the simulation process is simplified; the energy storage element is adopted as the dividing point, so that the dividing point is easy to select, and the dividing step is simple; the computer and the FPGA computing device are adopted for simulation, so that the simulation cost is reduced; the calculation results of the computer and the FPGA calculation device are alternately transmitted, so that alternate simulation calculation can be realized, and the simulation speed is increased.
Drawings
Fig. 1 is a schematic flowchart of a simulation method for a power electronic circuit according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a power electronic circuit according to an embodiment of the present invention.
Fig. 3 is an equivalent model of a power frequency circuit provided in an embodiment of the present invention.
Fig. 4 is an equivalent model of a high-frequency switching circuit according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a schematic flow chart of a simulation method of a power electronic circuit according to an embodiment of the present invention includes the following steps:
s1, dividing a power electronic circuit into a power frequency circuit and a high-frequency switch circuit;
the power electronic circuit comprises an energy storage element, and the energy storage element is used as a dividing point to divide the power electronic circuit into a power frequency circuit and a high-frequency switch circuit.
Furthermore, the energy storage element is a reactance and a capacitor; compared with the switching frequency, the voltage change frequency of the reactance and the capacitor is slow, and the state variable is convenient to calculate, so that the voltage change frequency is suitable for being used as a division point of a power frequency circuit and a high-frequency switching circuit.
Fig. 2 is a schematic structural diagram of a power electronic circuit according to an embodiment of the present invention; the power frequency circuit comprises a first alternating current power supply Ua, a second alternating current power supply Ub, a third alternating current power supply Uc, a three-phase reactor L, a capacitor C and a load R; the high-frequency switch circuit comprises a first insulated gate bipolar transistor g1, a second insulated gate bipolar transistor g2, a third insulated gate bipolar transistor g3, a fourth insulated gate bipolar transistor g4, a fifth insulated gate bipolar transistor g5 and a sixth insulated gate bipolar transistor g6;
the emitter electrode of the first insulated gate bipolar transistor g1 is connected with the collector electrode of the second insulated gate bipolar transistor g 2;
the emitter of the third insulated gate bipolar transistor g3 is connected with the collector of the fourth insulated gate bipolar transistor g 4; the collector electrode of the third insulated gate bipolar transistor g3 is connected with the collector electrode of the first insulated gate bipolar transistor g 1; the emitter electrode of the fourth insulated gate bipolar transistor g4 is connected with the emitter electrode of the second insulated gate bipolar transistor g 2;
the emitter of the fifth insulated gate bipolar transistor g5 is connected with the collector of the sixth insulated gate bipolar transistor g6; the collector electrode of the fifth insulated gate bipolar transistor g5 is connected with the collector electrode of the third insulated gate bipolar transistor g 3; an emitter electrode of the sixth insulated gate bipolar transistor g6 is connected with an emitter electrode of the fourth insulated gate bipolar transistor g 4;
one end of a first group of coils of the three-phase reactor is connected between an emitter electrode of the first insulated gate bipolar transistor g1 and a collector electrode of the second insulated gate bipolar transistor g2, and the other end of the first group of coils is connected with the positive electrode of the first alternating current power supply Ua;
one end of a second group of coils of the three-phase reactor is connected between an emitter electrode of the third insulated gate bipolar transistor g3 and a collector electrode of the fourth insulated gate bipolar transistor g4, and the other end of the second group of coils of the three-phase reactor is connected with the positive electrode of the second alternating current power supply Ub;
one end of a third group of coils of the three-phase reactor is connected between an emitter of a fifth insulated gate bipolar transistor g5 and a collector of a sixth insulated gate bipolar transistor g6, and the other end of the third group of coils is connected with the anode of a third alternating current power supply Uc;
the negative electrode of the first alternating current power supply Ua, the negative electrode of the second alternating current power supply Ub and the negative electrode of the third alternating current power supply Uc are connected;
the capacitor C is connected in parallel with the emitter of the fifth insulated gate bipolar transistor g5 and the two ends of the collector of the sixth insulated gate bipolar transistor g6;
the load R is connected in parallel across the capacitor C.
S2, modeling the divided power electronic circuit;
the modeling method comprises the following steps: modeling a power frequency circuit in the power electronic circuit by an electromagnetic transient calculation method; a high-frequency switch circuit in a power electronic circuit is modeled by a large-small resistance equivalent method.
When a large resistance method and a small resistance method are adopted, for a transistor, when a trigger pulse is turned on or the terminal voltage of the transistor in the last simulation step length is positive, the transistor is turned on, the transistor at the moment can be equivalent to a small resistor in a circuit, and the resistance value is equal to the on-resistance of the transistor; when the trigger pulse is turned off and the terminal voltage of the transistor in the last simulation step length is negative, the transistor is turned off, the transistor at the moment can be equivalent to a large resistor in a circuit, and the resistance value is equal to the turn-off resistance of the transistor; therefore, in the high-frequency switch circuit equivalent model after modeling, the insulated gate bipolar transistors g1-g6 are equivalent to equivalent resistors Rg1-Rg6.
S3, performing simulation calculation on the modeled power frequency circuit equivalent model by using a computer to obtain the output current and the output voltage of the power frequency circuit;
fig. 3 is an equivalent model of the power frequency circuit provided in the embodiment of the present invention; the equivalent model of the power frequency circuit comprises: the power supply comprises a first equivalent alternating current power supply Ua ', a second equivalent alternating current power supply Ub', a third equivalent alternating current power supply Uc ', an equivalent three-phase reactor L', a first controlled voltage source Va, a second controlled voltage source Vb, a third controlled voltage source Vc, a first controlled current source Idc, an equivalent capacitor C 'and an equivalent load R';
a first group of coils of the equivalent three-phase reactor L 'is connected in series between the anode of the first equivalent alternating current power supply Ua' and the input end of the first controlled voltage source Va; a second group of coils of the equivalent three-phase reactor L 'are connected in series between the anode of the second equivalent alternating current power supply Ub' and the input end of a second controlled voltage source Vb; a third group of coils of the equivalent three-phase reactor L 'are connected in series between the anode of a third equivalent alternating current power supply Uc' and the input end of a third controlled voltage source Vc;
the output end of the first controlled voltage source Va, the output end of the second controlled voltage source Vb and the output end of the third controlled voltage source Vc are connected;
the negative electrode of the first equivalent alternating current power supply Ua ', the negative electrode of the second equivalent alternating current power supply Ub ' and the negative electrode of the third equivalent alternating current power supply Uc ' are connected;
the equivalent capacitor C' is connected in parallel with two ends of the first controlled current source Idc; the equivalent load R 'is connected in parallel at two ends of the equivalent capacitor C';
the first controlled voltage source Va, the second controlled voltage source Vb and the third controlled voltage source Vc respectively output three-phase currents Ia, ib and Ic; the first controlled current source Idc outputs a direct voltage Udc.
S4, carrying out simulation calculation on the modeled equivalent model of the high-frequency switch circuit by adopting an FPGA (field programmable gate array) calculating device to obtain the output current and the output voltage of the high-frequency switch circuit;
fig. 4 is a diagram showing an equivalent model of a high-frequency switching circuit according to an embodiment of the present invention; the equivalent model of the high-frequency switch circuit comprises a second controlled current source Ia ', a third controlled current source Ib', a fourth controlled current source Ic ', a first equivalent resistor Rg1, a second equivalent resistor Rg2, a third equivalent resistor Rg3, a fourth equivalent resistor Rg4, a fifth equivalent resistor Rg5, a sixth equivalent resistor Rg6 and a fourth controlled voltage source Udc';
the first equivalent resistor Rg1 is connected with the second equivalent resistor Rg2 in series; the third equivalent resistor Rg3 and the fourth equivalent resistor Rg4 are connected in series and are connected in parallel at two ends of the first equivalent resistor Rg1 and the second equivalent resistor Rg 2; the fifth equivalent resistor Rg5 and the sixth equivalent resistor Rg6 are connected in series and are connected in parallel at two ends of the third equivalent resistor Rg3 and the fourth equivalent resistor Rg 4;
the output end of the second controlled current source Ia' is connected between the first equivalent resistor Rg1 and the second equivalent resistor Rg 2; the output end of the third controlled current source Ib' is connected between the third equivalent resistor Rg3 and the fourth equivalent resistor Rg 4; the output end of the fourth controlled current source Ic' is connected between the fifth equivalent resistor Rg5 and the sixth equivalent resistor Rg 6;
the input end of the second controlled current source Ia ', the input end of the third controlled current source Ib ' and the input end of the fourth controlled current source Ic ' are connected;
the fourth controlled voltage source Udc' is connected in parallel at two ends of the fifth equivalent resistor Rg5 and the sixth equivalent resistor Rg 6;
the second controlled current source Ia ', the third controlled current source Ib' and the fourth controlled current source Ic 'output three-phase voltages Va', vb 'and Vc', respectively, and the fourth controlled voltage source Udc 'outputs a direct current Idc'.
S5, alternately transmitting the simulation calculation result of the computer and the simulation calculation result of the FPGA calculation device;
the specific method for performing alternate transmission is as follows:
and carrying out one-time bidirectional communication in each simulation step of the simulation calculation, sending the output current and the output voltage of the power frequency circuit obtained by the simulation calculation of the computer to the FPGA calculation device, and sending the output current and the output voltage of the high-frequency switch circuit obtained by the simulation calculation of the FPGA calculation device to the computer.
In the current simulation step length, three-phase voltages Va ', vb ' and Vc ' obtained by simulation calculation in an equivalent model of a high-frequency switching circuit in the last simulation calculation step length received by a computer are used as input voltages of controlled voltage sources Va, vb and Vc in an equivalent circuit of a power frequency circuit, and direct current Idc is used as input current of a first controlled current source Idc; meanwhile, three-phase currents Ia, ib and Ic obtained through simulation calculation in the equivalent model of the power frequency circuit in the simulation step length are sent to the FPGA computing device; after receiving the direct-current voltage Udc, the three-phase currents Ia, ib and Ic, the FPGA calculating device takes the three-phase currents Ia, ib and Ic as input currents of a second controlled current source Ia ', a third controlled current source Ib' and a fourth controlled current source Ic 'of an equivalent model of the high-frequency switch circuit, takes the direct-current voltage Udc as input voltage of a fourth controlled voltage source Udc', calculates the three-phase voltage and the direct current at the moment, and sends a calculation result to a computer as output current and output voltage of the simulation step length.
When the next simulation step is long, the process is repeated to realize the alternate calculation of the power electronic circuit, so that the simulation calculation of the power electronic circuit provided by the embodiment of the invention is realized.
In addition, the simulation method of the power electronic circuit provided by the embodiment of the invention can be used for, but not limited to, performing simulation calculation on the power electronic circuit provided by the embodiment of the invention; for other power electronic circuits with circuit structures including energy storage elements, the simulation method of the power electronic circuit provided by the embodiment of the invention can be used for segmentation, modeling and simulation calculation.
Compared with the prior art, the simulation method of the power electronic circuit provided by the embodiment of the invention has the following beneficial effects:
the power electronic circuit is divided into two sub-circuits, so that the simulation process is simplified; the energy storage element is adopted as the dividing point, so that the dividing point is easy to select, and the dividing steps are simple; the computer and the FPGA computing device are adopted for simulation, so that the simulation cost is reduced; the calculation results of the computer and the FPGA calculation device are alternately transmitted, so that alternate simulation calculation can be realized, and the simulation speed is increased.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (4)
1. A simulation method of a power electronic circuit is characterized by comprising the following steps:
dividing a power electronic circuit into a power frequency circuit and a high-frequency switch circuit;
modeling the divided power electronic circuit;
carrying out simulation calculation on the modeled power frequency circuit equivalent model by using a computer to obtain the output current and the output voltage of the power frequency circuit;
carrying out simulation calculation on the modeled high-frequency switch circuit equivalent model by adopting an FPGA (field programmable gate array) calculating device to obtain the output current and the output voltage of the high-frequency switch circuit;
alternately transmitting the simulation calculation result of the computer and the simulation calculation result of the FPGA calculation device;
the power electronic circuit comprises an energy storage element; the energy storage element is used as a dividing point to divide the power electronic circuit into the power frequency circuit and the high-frequency switch circuit;
the power frequency circuit comprises a first alternating current power supply Ua, a second alternating current power supply Ub, a third alternating current power supply Uc, a three-phase reactor L, a capacitor C and a load R; the high-frequency switch circuit comprises a first insulated gate bipolar transistor g1, a second insulated gate bipolar transistor g2, a third insulated gate bipolar transistor g3, a fourth insulated gate bipolar transistor g4, a fifth insulated gate bipolar transistor g5 and a sixth insulated gate bipolar transistor g6;
the emitter of the first insulated gate bipolar transistor g1 is connected with the collector of the second insulated gate bipolar transistor g 2;
the emitter of the third insulated gate bipolar transistor g3 is connected with the collector of the fourth insulated gate bipolar transistor g 4; the collector electrode of the third insulated gate bipolar transistor g3 is connected with the collector electrode of the first insulated gate bipolar transistor g 1; the emitter electrode of the fourth insulated gate bipolar transistor g4 is connected with the emitter electrode of the second insulated gate bipolar transistor g 2;
the emitter of the fifth insulated gate bipolar transistor g5 is connected with the collector of the sixth insulated gate bipolar transistor g6; the collector electrode of the fifth insulated gate bipolar transistor g5 is connected with the collector electrode of the third insulated gate bipolar transistor g 3; the emitter electrode of the sixth insulated gate bipolar transistor g6 is connected with the emitter electrode of the fourth insulated gate bipolar transistor g 4;
one end of a first group of coils of the three-phase reactor is connected between an emitter electrode of the first insulated gate bipolar transistor g1 and a collector electrode of the second insulated gate bipolar transistor g2, and the other end of the first group of coils is connected with a positive electrode of the first alternating current power supply Ua;
one end of a second group of coils of the three-phase reactor is connected between an emitter of the third insulated gate bipolar transistor g3 and a collector of the fourth insulated gate bipolar transistor g4, and the other end of the second group of coils of the three-phase reactor is connected with the anode of the second alternating current power supply Ub;
one end of a third group of coils of the three-phase reactor is connected between an emitter of the fifth insulated gate bipolar transistor g5 and a collector of the sixth insulated gate bipolar transistor g6, and the other end of the third group of coils of the three-phase reactor is connected with the anode of the third alternating current power supply Uc;
the negative electrode of the first alternating current power supply Ua, the negative electrode of the second alternating current power supply Ub and the negative electrode of the third alternating current power supply Uc are connected;
the capacitor C is connected in parallel to the emitter of the fifth insulated gate bipolar transistor g5 and the two ends of the collector of the sixth insulated gate bipolar transistor g6;
and the load R is connected in parallel with two ends of the capacitor C.
2. A method of simulating a power electronic circuit according to claim 1, wherein the energy storage element comprises a reactance and a capacitance.
3. A method for simulating a power electronic circuit according to claim 1, wherein the specific method for modeling the divided power electronic circuit is as follows:
modeling the power frequency circuit in the power electronic circuit by an electromagnetic transient calculation method;
and modeling the high-frequency switch circuit in the power electronic circuit by a large-small resistance equivalent method.
4. The method for simulating a power electronic circuit according to claim 1, wherein the specific method for alternately transmitting the simulation calculation result of the computer and the simulation calculation result of the FPGA computing device is as follows:
and carrying out one-time bidirectional communication in each simulation step of the simulation calculation, sending the output current and the output voltage of the power frequency circuit obtained by the computer simulation calculation to the FPGA calculation device, and sending the output current and the output voltage of the high-frequency switch circuit obtained by the FPGA calculation device through the simulation calculation to the computer.
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