CN109344419A - A kind of transient state piecewise analysis model for IGBT and PIN diode convertor unit - Google Patents
A kind of transient state piecewise analysis model for IGBT and PIN diode convertor unit Download PDFInfo
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Abstract
The invention discloses a kind of transient state piecewise analysis models of convertor unit constituted for IGBT and PIN diode, it is segmented convertor unit transient process, in different phase using the combination of time-varying voltage source and current source come to insulated gate bipolar transistor and freewheeling diode modeling, to realize the Reduced Decoupling of transient process complexity physical mechanism, the convergence and arithmetic speed of model are greatly improved, while its all parameter can be obtained from databook.Transient state piecewise analysis model provided by the invention is modeled directly against convertor unit, transient state mechanism is realized using reasonable hypothesis to decouple, Models computed efficiency is greatly improved under the premise of guaranteeing precision, is particularly suitable for the simulation analysis for the Complex Power electronics transformation system that more devices are constituted.
Description
Technical field
The present invention relates to power semiconductor device technology fields, more particularly to for IGBT and PIN diode change of current list
The transient state piecewise analysis model of member.
Background technique
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is at present in electricity
The device for power switching being used widely in power electronic device.To guarantee reversed afterflow ability, IGBT is often required to PIN bis- in parallel
Pole pipe.In converters, IGBT constitutes one group of basic convertor unit with to pipe PIN diode, completes energy conversion
Basic function.
During the emulation of power electronic equipment, analysis and design, device for power switching such as IGBT and PIN diode
Usually it is taken as perfect switch.This Utopian modeling cannot reflect the switching characteristic of device, such as switch time delay, switch damage
Consumption, switching voltage current spike etc., it is therefore necessary to establish switching transient model.
Conventional switching transient model is generally difficult to take into account model accuracy and resolves efficiency at present, and therefore, it is difficult to be used in contain
In the complex transformations device of many devices.For example, mechanism model is modeled for Semiconductor Physics mechanism, model form is usually multiple
Miscellaneous differential equation and equivalent circuit, such as Hefner IGBT model etc..This model has degree of precision, but computing speed
It is very slow, it does not often restrain, and Semiconductor Physics parameter is difficult to obtain.Behavior model does not consider device inside physical machine usually
System, directly models its external characteristics, but this mode tends not to meet required precision, does not also account for parameter sometimes and exist
Variation under different operating conditions.In addition, most of behavior model be equally device is modeled using equivalent circuit, such as
Igbt1 model in Saber simulation software.Such modeling method equally faces the problem of convergence and simulation velocity.
It is a kind of existing to solve for the transient state piecewise analysis model of IGBT and PIN diode convertor unit therefore, it is desirable to have
Conventional device model is difficult to the problem of taking into account simulation accuracy and simulation efficiency in technology.
Summary of the invention
The invention discloses a kind of transient state piecewise analysis model for IGBT and PIN diode convertor unit, the winks
State piecewise analysis model is determined by following steps:
Step 1: according to the chart-information of databook, extracting transient state piecewise analysis model parameter；
Step 2: transient state piecewise analysis model parameter temperature is extracted according to the chart-information in databook containing temperature coefficient
Spend correction factor；
Step 3: determine that convertor unit turns on and off the divided stages and transient state piecewise analysis pattern of transient process,
According to the different physical mechanisms for turning on and off transient process, transient process will be turned on and off and be divided into different phase, each
Stage utilizes the exchange of one of current source-voltage source mode or voltage source-current source mode in transient state piecewise analysis model
Flow Modelon Modeling, wherein insulated gate bipolar transistor is modeled as current source by current source-voltage source mode, by PIN diode
It is modeled as voltage source, insulated gate bipolar transistor is modeled as voltage source, PIN diode is built by voltage source-current source mode
Mould is current source；
Step 4: determining that convertor unit opens the voltage source in transient process each stage and the expression formula of current source in step 3；
Step 5: determining the expression formula in convertor unit shutdown transient process each stage voltage source and current source in step 3.
Preferably, transient state piecewise analysis model parameter includes: MOS gate pole threshold voltage, insulated gate bipolar in the step 1
Transistor npn npn equivalent transconductance, insulated gate bipolar transistor equivalent capacity parameter and PIN diode is counter restores parameter；
1. according to the MOS gate pole threshold voltage V in databookTExtract the MOS gate pole threshold voltage；
2. extracting insulated gate bipolar transistor equivalent transconductance according to the following formula:
ic=K (vge-VT)2
Wherein, icIt is insulated gate bipolar transistor collector current, K is insulated gate bipolar transistor equivalent transconductance,
vgeIt is insulated gate bipolar transistor gate voltage, above formula is fitted using the transfer characteristic curve in databook, really
Determine insulated gate bipolar crystal equivalent transconductance K；
3. extracting insulated gate bipolar transistor equivalent capacity parameter according to the following formula:
Wherein, CgcIt is insulated gate bipolar transistor gate pole-collector equivalent capacity, λ is insulated gate bipolar transistor
Capacitance coefficient, vceIt is insulated gate bipolar transistor collector emitter voltage, VlimIt is capacitor transfer point voltage, CoxdIt is oxygen
Compound capacitor is fitted above formula using the capacitance curve in databook, determines parameter lambda, VlimAnd CoxdValue；
4. extracting according to the following formula, PIN diode is counter to restore parameter:
Irr=AID B
trr=CID D
Wherein, IrrIt is the anti-restoring current of PIN diode, trrIt is PIN diode reverse recovery time, A, B, C, D are coefficients,
Above formula is fitted using the anti-recovery curve in databook, determines parameter A, B, C, the value of D.
Preferably, the specific steps of the step 2 extraction transient state piecewise analysis model parameter temperature correction coefficient include:
Step 2.1: threshold value voltage temperature correction factor according to the following formula:
VT(Tj)=VT(T0)-α(Tj-T0)
Wherein, VTIt is MOS gate pole threshold voltage, TjIt is junction temperature, T0It is databook test temperature, α is MOS gate pole threshold value
Voltage temperature correction factor is fitted determining α value using databook；
Step 2.2: insulated gate bipolar transistor equivalent transconductance temperature correction coefficient is determined according to the following formula:
Wherein, β is insulated gate bipolar transistor equivalent transconductance temperature correction coefficient, is fitted really using databook
Determine β value；
Step 2.3: the anti-recovery charge temperature correction coefficient of PIN diode is determined according to the following formula:
Wherein, QrrIt is the anti-recovery charge of PIN diode, γ is the anti-recovery charge temperature correction coefficient of PIN diode, is utilized
Databook is fitted the value of determining γ；
Step 2.4: PIN diode reverse recovery time temperature correction coefficient is determined according to the following formula:
Wherein, trrIt is PIN diode reverse recovery time, η is PIN diode reverse recovery time temperature correction coefficient, is utilized
Databook is fitted the value of determining η；
Step 2.5: insulated gate bipolar transistor on-state voltage drop temperature correction coefficient is determined according to the following formula:
Vsat(Tj)=Vsat(T0)+κ(Tj-T0)
Wherein, VsatIt is insulated gate bipolar transistor on-state voltage drop, κ is insulated gate bipolar transistor on-state voltage drop temperature
Correction factor is spent, the value of determining κ is fitted using databook.
Preferably, the transient process of opening in the step 3 is divided into six stages；Stage 1 is that transient process starts directly
It is begun to ramp up to collector current, the stage 2 is that collector current is begun to ramp up until collector current rises to load current, rank
Section 3 is that collector current rises to load current and rises to maximum value to collector current, and the stage 4 is that collector current rises to
Maximum value drops to load current to collector current, and the stage 5 is that collector current drops to load current until under tube voltage drop
The sum of Miller level and capacitor transfer point voltage are dropped to, the stage 6 is that tube voltage drop drops to Miller level and capacitor transfer point voltage
The sum of drop to on-state voltage drop until tube voltage drop；Wherein, the stage 1,2 and 3 is using the current source-voltage source mode modeling, rank
Section 4,5 and 6 is using the voltage source-current source mode modeling.
Preferably, the shutdown transient process in the step 3 is divided into six stages；Stage 1 is that transient process starts directly
It is begun to ramp up to tube voltage drop, the stage 2 is that tube voltage drop is begun to ramp up until tube voltage drop rises to Miller level and capacitor transfer point electricity
The sum of pressure, stage 3 are that tube voltage drop rises to the sum of Miller level and capacitor transfer point voltage until tube voltage drop rises to direct current mother
Line voltage, stage 4 are that tube voltage drop rises to DC bus-bar voltage until the half of collector current fast drop course, stage 5
Be collector current fast drop course half until collector current drops to tail currents, the stage 6 is collector current
Drop to tail currents until collector current drops to zero；Wherein, the stage 1,2 and 3 uses the voltage source-current source mode
Modeling, the stage 4,5 and 6 is using the current source-voltage source mode modeling.
Preferably, the step 4 determines that six convertor units in step 3 open the voltage and current source in transient process stage
Expression formula, according to current source-voltage source mode, then insulated gate bipolar transistor is modeled as current source, current expression
It is denoted as ic, PIN diode is modeled as voltage source, and voltage expression is denoted as vD；According to voltage source-current source mode, insulated gate is double
Bipolar transistor is modeled as voltage source, and voltage expression is denoted as vce；PIN diode is modeled as current source, and electric current is denoted as iD；
Step 4.1: opening transient process stage 1, i.e. [t0,t1], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is current source, ic=0；PIN diode is modeled as voltage source, vD=0；DurationWherein tdonIt is turn on delay time；τ1It is time constant, expression formula τ1=(Cge+Cgc)
(RGon+RGint), RGonIt is gate pole open resistance, RGintIt is resistance in gate pole；VGonIt is driving conducting voltage, VGoffIt is driving shutdown
Voltage；
Step 4.2: opening transient process stage 2, i.e. [t1, t2], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is current source, ic=K (vge-VT)2；PIN diode is modeled as voltage source, vD=0；DurationWherein trIt is rise time, VmlIt is Miller level, expression formula Vml=vge(t2)=vge(ic
=IL), ILIt is load current, vgeExpression formula be
Step 4.3: opening transient process stage 3, i.e. [t2, t3], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is current source, ic=K (vge-VT)2；PIN diode is modeled as voltage source, vD=0；DurationWherein VgerrIt is the gate voltage spike of anti-recovery process, expression formula isvgeExpression formula be
Step 4.4: opening transient process stage 4, i.e. [t3, t4], using voltage source-current source mode, insulated gate bipolar
Transistor modeling is voltage source,Wherein igonIt is the charging of opening process gate pole
Electric current, expression formula arePIN diode is modeled as current source,Duration is according to t4-t2
=trrIt determines；
Step 4.5: opening transient process stage 5, i.e. [t4, t5], using voltage source-current source mode insulated gate bipolar
Transistor modeling is voltage source,It is identical as the stage 4；PIN diode modeling
For current source, iD=0；Duration according toIt determines；
Step 4.6: opening transient process stage 6, i.e. [t5, t6], using voltage source-current source mode, insulated gate bipolar
Transistor modeling is voltage source, vce=Vlim+Vml-igon(t-t5)/Coxd；PIN diode is modeled as current source, iD=0；Continue
Time is according to t6=t (vce=Vsat)=t5+Coxd(Vlim+Vml-Vsat)/igonIt determines.
Preferably, the step 5 determines each stage voltage of convertor unit shutdown transient process and electric current in the step 3
The expression formula in source, according to current source-voltage source mode, then insulated gate bipolar transistor is modeled as current source, electric current expression
Formula is denoted as ic, PIN diode is modeled as voltage source, and voltage expression is denoted as vD；According to voltage source-current source mode, insulated gate
Bipolar junction transistor is modeled as voltage source, and voltage expression is denoted as vce；PIN diode is modeled as current source, and electric current is denoted as iD；
Step 5.1: shutdown transient process stage 1, i.e. [t7, t8], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is voltage source, vce=Vsat；PIN diode is modeled as current source, iD=0；Duration according toIt determines, wherein tdoffIt is off delay time；τ2It is time constant, expression formula τ2=
(Cge+Cgc)(RGoff+RGint), RGoffIt is gate pole shutdown resistance；
Step 5.2: shutdown transient process stage 2, i.e. [t8, t9], using voltage source-current source mode, insulated gate bipolar
Transistor modeling is voltage source,Wherein igoffIt is off process gate pole discharge current, expression formula isPIN diode is modeled as current source, iD=0；Duration is according to t9-t8=(Vlim+Vml-Vsat)Coxd/
igoffIt determines；
Step 5.3: shutdown transient process stage 3, i.e. [t9, t10], using voltage source-current source mode mode, insulated gate
Bipolar junction transistor is modeled as voltage source,PIN diode is modeled as current source, iD=
0；Duration according toIt determines；
Step 5.4: shutdown transient process stage 4, i.e. [t10,t11], using current source-voltage source mode mode, insulated gate
Bipolar junction transistor is modeled as current source,WhereinIt is off the variation of process electric current maximum
Rate, expression formula aretfastIt is electric current fast duration decline stage, ttailIt is electric current
Trail phase duration, ItailIt is tail currents；PIN diode is modeled as voltage source, vD=0；Duration is according to t11-t10
=tfast/ 2 determine；
Step 5.5: shutdown transient process stage 5, i.e. [t11,t12], using current source-voltage source mode, insulated gate bipolar
Transistor npn npn is modeled as current source,PIN diode is modeled as electricity
Potential source, vD=0；Duration is according to t12-t11=tfast/ 2 determine；
Step 5.6: shutdown transient process stage 6, i.e. [t12,t13], using current source-voltage source mode, insulated gate bipolar
Transistor npn npn is modeled as current source,PIN diode is modeled as voltage source, vD=
0；Duration is according to t13-t12=ttailIt determines.
The invention discloses a kind of transient state piecewise analysis model for IGBT and PIN diode convertor unit, the winks
State piecewise analysis model is segmented convertor unit transient process, utilizes the group in time-varying voltage source and current source in different phase
It closes and to model insulated gate bipolar transistor and freewheeling diode, to realize the depression of order solution of transient process complexity physical mechanism
Coupling greatly improves the convergence and arithmetic speed of model, while its all parameter can be obtained from databook.
Detailed description of the invention
Fig. 1 is the schematic diagram that transient state piecewise analysis model parameter of the invention is extracted from databook curve.
Fig. 2 is the schematic diagram of transient state piecewise analysis model both of which of the invention.
Fig. 3 is that transient state piecewise analysis model of the invention turns on and off transient process stepwise schematic views.
The schematic equivalent circuit that Fig. 4 is considered when being transient state piecewise analysis model modeling of the invention.
Fig. 5 is that transient state piecewise analysis model of the invention opens transient process simulation result and experimental waveform comparison diagram.
Fig. 6 is transient state piecewise analysis model shutdown transient process simulation result and experimental waveform comparison diagram of the invention.
Specific embodiment
To keep the purposes, technical schemes and advantages of the invention implemented clearer, below in conjunction in the embodiment of the present invention
Attached drawing, technical solution in the embodiment of the present invention is further described in more detail.In the accompanying drawings, identical from beginning to end or class
As label indicate same or similar element or element with the same or similar functions.Described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.The embodiments described below with reference to the accompanying drawings are exemplary, it is intended to use
It is of the invention in explaining, and be not considered as limiting the invention.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
For the transient state piecewise analysis model of IGBT and PIN diode convertor unit, the transient state piecewise analysis model is logical
Following steps are crossed to determine:
Step 1: according to the chart-information of databook, extracting transient state piecewise analysis model parameter.
Transient state piecewise analysis model parameter includes: MOS gate pole threshold voltage, insulated gate bipolar crystal in the step 1
Pipe equivalent transconductance, insulated gate bipolar transistor equivalent capacity parameter and PIN diode is counter restores parameter；
1. according to the MOS gate pole threshold voltage V in databookTExtract the MOS gate pole threshold voltage；
2. as shown in Figure 1, extracting insulated gate bipolar transistor equivalent transconductance according to the following formula:
ic=K (vge-VT)2
Wherein, icIt is insulated gate bipolar transistor collector current, K is insulated gate bipolar transistor equivalent transconductance,
vgeIt is insulated gate bipolar transistor gate voltage, above formula is fitted using the transfer characteristic curve in databook, really
Insulated gate bipolar crystal equivalent transconductance K is determined, as shown in Fig. 1 (a)；
3. extracting insulated gate bipolar transistor equivalent capacity parameter according to the following formula:
Wherein, CgcIt is insulated gate bipolar transistor gate pole-collector equivalent capacity, λ is insulated gate bipolar transistor
Capacitance coefficient, vceIt is insulated gate bipolar transistor collector emitter voltage, VlimIt is capacitor transfer point voltage, CoxdIt is oxygen
Compound capacitor is fitted above formula using the capacitance curve in databook, determines parameter lambda, VlimAnd CoxdValue, such as Fig. 1
(b) shown in；
4. extracting according to the following formula, PIN diode is counter to restore parameter:
Irr=AID B
trr=CID D
Wherein, IrrIt is the anti-restoring current of PIN diode, trrIt is PIN diode reverse recovery time, A, B, C, D are coefficients,
Above formula is fitted using the anti-recovery curve in databook, determines parameter A, B, C, the value of D, as shown in Fig. 1 (c).
Step 2: transient state piecewise analysis model parameter temperature is extracted according to the chart-information in databook containing temperature coefficient
Spend correction factor.
The specific steps that the step 2 extracts transient state piecewise analysis model parameter temperature correction coefficient include:
Step 2.1: threshold value voltage temperature correction factor according to the following formula:
VT(Tj)=VT(T0)-α(Tj-T0)
Wherein, VTIt is MOS gate pole threshold voltage, TjIt is junction temperature, T0It is databook test temperature, α is MOS gate pole threshold value
Voltage temperature correction factor is fitted determining α value using databook；
Step 2.2: insulated gate bipolar transistor equivalent transconductance temperature correction coefficient is determined according to the following formula:
Wherein, β is insulated gate bipolar transistor equivalent transconductance temperature correction coefficient, is fitted really using databook
Determine β value；
Step 2.3: the anti-recovery charge temperature correction coefficient of PIN diode is determined according to the following formula:
Wherein, QrrIt is the anti-recovery charge of PIN diode, γ is the anti-recovery charge temperature correction coefficient of PIN diode, is utilized
Databook is fitted the value of determining γ；
Step 2.4: PIN diode reverse recovery time temperature correction coefficient is determined according to the following formula:
Wherein, trrIt is PIN diode reverse recovery time, η is PIN diode reverse recovery time temperature correction coefficient, is utilized
Databook is fitted the value of determining η；
Step 2.5: insulated gate bipolar transistor on-state voltage drop temperature correction coefficient is determined according to the following formula:
Vsat(Tj)=Vsat(T0)+κ(Tj-T0)
Wherein, VsatIt is insulated gate bipolar transistor on-state voltage drop, κ is insulated gate bipolar transistor on-state voltage drop temperature
Correction factor is spent, the value of determining κ is fitted using databook.
Step 3: determine that convertor unit turns on and off the divided stages and transient state piecewise analysis pattern of transient process,
According to the different physical mechanisms for turning on and off transient process, transient process will be turned on and off and be divided into different phase, each
Stage utilizes the exchange of one of current source-voltage source mode or voltage source-current source mode in transient state piecewise analysis model
Modelon Modeling is flowed, as shown in Fig. 2, insulated gate bipolar transistor is modeled as current source by current source-voltage source mode, by PIN
Diode is modeled as voltage source, and insulated gate bipolar transistor is modeled as voltage source by voltage source-current source mode, by PIN bis-
Pole pipe is modeled as current source.
As shown in Fig. 3 (a), the transient process of opening in the step 3 is divided into six stages；Stage 1 is transient process
Start to begin to ramp up until collector current, the stage 2 is that collector current is begun to ramp up until collector current rises to load
Electric current, stage 3 are that collector current rises to load current and rises to maximum value to collector current, and the stage 4 is collector electricity
Stream rises to maximum value and drops to load current to collector current, the stage 5 be collector current drop to load current until
Tube voltage drop drops to the sum of Miller level and capacitor transfer point voltage, and the stage 6 is that tube voltage drop drops to Miller level and capacitor turns
The sum of voltage is changed until tube voltage drop drops to on-state voltage drop；Wherein, the stage 1,2 and 3 uses the current source-voltage source mode
Modeling, the stage 4,5 and 6 is using the voltage source-current source mode modeling.
As shown in Fig. 3 (b), the shutdown transient process in the step 3 is divided into six stages；Stage 1 is transient process
Start to begin to ramp up until tube voltage drop, the stage 2 is that tube voltage drop is begun to ramp up until tube voltage drop rises to Miller level and capacitor turns
The sum of voltage is changed, 3 stage of stage is that tube voltage drop rises to the sum of Miller level and capacitor transfer point voltage until in tube voltage drop
It is raised to DC bus-bar voltage, the stage 4 is that tube voltage drop rises to DC bus-bar voltage until collector current fast drop course
Half, stage 5 are the half of collector current fast drop course until collector current drops to tail currents, and the stage 6 is
Collector current drops to tail currents until collector current drops to zero；Wherein, the stage 1,2 and 3 uses the voltage source-
Current source mode modeling, the stage 4,5 and 6 is using the current source-voltage source mode modeling.
Step 4: determining that convertor unit in step 3 opens the expression formula in the voltage and current source in transient process each stage.
Six convertor units open the expression in the voltage and current source in transient process stage in the determining step 3 of the step 4
Formula, according to current source-voltage source mode, then insulated gate bipolar transistor is modeled as current source, and current expression is denoted as ic,
PIN diode is modeled as voltage source, and voltage expression is denoted as vD；According to voltage source-current source mode, insulated gate bipolar is brilliant
Body pipe is modeled as voltage source, and voltage expression is denoted as vce；PIN diode is modeled as current source, and electric current is denoted as iD；
Step 4.1: opening transient process stage 1, i.e. [t0, t1], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is current source, ic=0；PIN diode is modeled as voltage source, vD=0；DurationWherein tdonIt is turn on delay time；τ1It is time constant, expression formula τ1=(Cge+Cgc)
(RGon+RGint), RGonIt is gate pole open resistance, RGintIt is resistance in gate pole；VGonIt is driving conducting voltage, VGoffIt is driving shutdown
Voltage, the meaning of circuit parameter as shown in figure 4,；
Step 4.2: opening transient process stage 2, i.e. [t1, t2], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is current source, ic=K (vge-VT)2；PIN diode is modeled as voltage source, vD=0；DurationWherein trIt is rise time, VmlIt is Miller level, expression formula Vml=vge(t2)=vge(ic
=IL), ILIt is load current, vgeExpression formula be
Step 4.3: opening transient process stage 3, i.e. [t2, t3], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is current source, ic=K (vge-VT)2；PIN diode is modeled as voltage source, vD=0；DurationWherein VgerrIt is the gate voltage spike of anti-recovery process, expression formula isvgeExpression formula be
Step 4.4: opening transient process stage 4, i.e. [t3, t4], using voltage source-current source mode, insulated gate bipolar
Transistor modeling is voltage source,Wherein igonIt is the charging of opening process gate pole
Electric current, expression formula arePIN diode is modeled as current source,Duration is according to t4-t2
=trrIt determines；
Step 4.5: opening transient process stage 5, i.e. [t4, t5], using voltage source-current source mode insulated gate bipolar
Transistor modeling is voltage source,It is identical as the stage 4；PIN diode modeling
For current source, iD=0；Duration according toIt determines；
Step 4.6: opening transient process stage 6, i.e. [t5, t6], using voltage source-current source mode, insulated gate bipolar
Transistor modeling is voltage source, vce=Vlim+Vml-igon(t-t5)/Coxd；PIN diode is modeled as current source, iD=0；Continue
Time is according to t6=t (vce=Vsat)=t5+Coxd(Vlim+Vml-Vsat)/igonIt determines.
Step 5: determining the expression formula of convertor unit shutdown transient process each stage voltage and current source in step 3.
The step 5 determines the table of convertor unit shutdown transient process each stage voltage and current source in the step 3
Up to formula, according to current source-voltage source mode, then insulated gate bipolar transistor is modeled as current source, and current expression is denoted as
ic, PIN diode is modeled as voltage source, and voltage expression is denoted as vD；According to voltage source-current source mode, insulated gate bipolar
Transistor modeling is voltage source, and voltage expression is denoted as vce；PIN diode is modeled as current source, and electric current is denoted as iD；
Step 5.1: shutdown transient process stage 1, i.e. [t7, t8], using current source-voltage source mode, insulated gate bipolar
Transistor modeling is voltage source, vce=Vsat；PIN diode is modeled as current source, iD=0；Duration according toIt determines, wherein tdoffIt is off delay time；τ2It is time constant, expression formula τ2=
(Cge+Cgc)(RGoff+RGint), RGoffIt is gate pole shutdown resistance；
Step 5.2: shutdown transient process stage 2, i.e. [t8,t9], using voltage source-current source mode, insulated gate bipolar
Transistor modeling is voltage source,Wherein igoffIt is off process gate pole discharge current, expression formula isPIN diode is modeled as current source, iD=0；Duration is according to t9-t8=(Vlim+Vml-Vsat)Coxd/
igoffIt determines；
Step 5.3: shutdown transient process stage 3, i.e. [t9,t10], using voltage source-current source mode mode, insulated gate
Bipolar junction transistor is modeled as voltage source,PIN diode is modeled as current source, iD=
0；Duration according toIt determines；
Step 5.4: shutdown transient process stage 4, i.e. [t10,t11], using current source-voltage source mode mode, insulated gate
Bipolar junction transistor is modeled as current source,WhereinIt is off the variation of process electric current maximum
Rate, expression formula aretfastIt is electric current fast duration decline stage, ttailIt is electric current
Trail phase duration, ItailIt is tail currents；PIN diode is modeled as voltage source, vD=0；Duration is according to t11-t10
=tfast/ 2 determine；
Step 5.5: shutdown transient process stage 5, i.e. [t11,t12], using current source-voltage source mode, insulated gate bipolar
Transistor npn npn is modeled as current source,PIN diode is modeled as electricity
Potential source, vD=0；Duration is according to t12-t11=tfast/ 2 determine；
Step 5.6: shutdown transient process stage 6, i.e. [t12,t13], using current source-voltage source mode, insulated gate bipolar
Transistor npn npn is modeled as current source,PIN diode is modeled as voltage source, vD=
0；Duration is according to t13-t12=ttailIt determines.
Simulation result should be obtained by the present invention, and compared with experimental result.Test result such as Fig. 5 and Fig. 6
It is shown.It can be seen that transient state piecewise analysis model proposed by the present invention can accurately reflect the crucial ginseng of On-off transition
Number.
The simulation time of the simulation time of mentioned transient state piecewise analysis model and Saber simulation software is compared.Using one
The insulated-gate bipolar transistor device of a single-phase H bridge inverter example, Saber uses igbt_b model, PIN diode device
Using dp1 model, 0.2s dynamic process time-consuming 127s in Saber software is emulated, and utilizes transient state piecewise analysis model 0.2s
Dynamic process only needs 3.5s, it is seen that transient state piecewise analysis model greatly improves simulation velocity.In addition, the device in Saber
Often there is the problem of not restraining in the complicated circuits such as more level in model, and transient state piecewise analysis model is without any dynamic member
Part only contains voltage source and current source, and mathematical model is algebraic equation rather than the differential equation, therefore asks there is no constringent
Topic.
The invention has the characteristics that:
1, mentioned transient state piecewise analysis model modelling approach is by being segmented convertor unit transient process, in not same order
The combination of Duan Liyong time-varying voltage source and current source to model insulated gate bipolar transistor and freewheeling diode convertor unit,
To realize the Reduced Decoupling of transient process complexity physical mechanism.
2, mentioned transient state piecewise analysis model modelling approach greatly improves the convergence and arithmetic speed of model.
3, mentioned transient state piecewise analysis model modelling approach can accurately reflect transient process key parameter, such as electricity
Current voltage spike, voltage and current up and down time, switching loss etc..
4, all parameters of mentioned transient state piecewise analysis model modelling approach can be obtained all from databook.
Finally it is noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations.To the greatest extent
Present invention has been described in detail with reference to the aforementioned embodiments for pipe, those skilled in the art should understand that: it is still
It is possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is equally replaced
It changes；And these are modified or replaceed, the essence for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution
Mind and range.
Claims (7)
1. a kind of transient state piecewise analysis model for IGBT and PIN diode convertor unit, which is characterized in that the transient state point
Piecewise analysis model is determined by following steps:
Step 1: according to the chart-information of databook, extracting transient state piecewise analysis model parameter；
Step 2: transient state piecewise analysis model parameter temperature being extracted according to the chart-information in databook containing temperature coefficient and is repaired
Positive coefficient；
Step 3: determine that convertor unit turns on and off the divided stages and transient state piecewise analysis pattern of transient process, according to
The different physical mechanisms for turning on and off transient process will turn on and off transient process and be divided into different phase, each stage
Using in transient state piecewise analysis model current source-voltage source mode or one of voltage source-current source mode to change of current list
Meta Model, wherein insulated gate bipolar transistor is modeled as current source by current source-voltage source mode, and PIN diode is modeled
For voltage source, insulated gate bipolar transistor is modeled as voltage source, PIN diode is modeled as by voltage source-current source mode
Current source；
Step 4: determining that convertor unit opens the voltage source in transient process each stage and the expression formula of current source in step 3；
Step 5: determining the expression formula in convertor unit shutdown transient process each stage voltage source and current source in step 3.
2. the transient state piecewise analysis model according to claim 1 for IGBT and PIN diode convertor unit, feature
Be: transient state piecewise analysis model parameter includes: MOS gate pole threshold voltage, insulated gate bipolar transistor etc. in the step 1
Effect mutual conductance, insulated gate bipolar transistor equivalent capacity parameter and PIN diode is counter restores parameter；
1. according to the MOS gate pole threshold voltage V in databookTExtract the MOS gate pole threshold voltage；
2. extracting insulated gate bipolar transistor equivalent transconductance according to the following formula:
ic=K (vge-VT)2
Wherein, icIt is insulated gate bipolar transistor collector current, K is insulated gate bipolar transistor equivalent transconductance, vgeIt is
Insulated gate bipolar transistor gate voltage is fitted above formula using the transfer characteristic curve in databook, determines exhausted
Edge grid bipolar transistor equivalent transconductance K；
3. extracting insulated gate bipolar transistor equivalent capacity parameter according to the following formula:
Wherein, CgcIt is insulated gate bipolar transistor gate pole-collector equivalent capacity, λ is insulated gate bipolar transistor capacitor
Coefficient, vceIt is insulated gate bipolar transistor collector emitter voltage, VlimIt is capacitor transfer point voltage, CoxdIt is oxide
Capacitor is fitted above formula using the capacitance curve in databook, determines parameter lambda, VlimAnd CoxdValue；
4. extracting according to the following formula, PIN diode is counter to restore parameter:
Irr=AID B
trr=CID D
Wherein, IrrIt is the anti-restoring current of PIN diode, trrIt is PIN diode reverse recovery time, A, B, C, D are coefficients, utilize number
Above formula is fitted according to the anti-recovery curve in handbook, determines parameter A, B, C, the value of D.
3. the transient state piecewise analysis model according to claim 2 for IGBT and PIN diode convertor unit, feature
Be: the specific steps that the step 2 extracts transient state piecewise analysis model parameter temperature correction coefficient include:
Step 2.1: threshold value voltage temperature correction factor according to the following formula:
VT(Tj)=VT(T0)-α(Tj-T0)
Wherein, VTIt is MOS gate pole threshold voltage, TjIt is junction temperature, T0It is databook test temperature, α is MOS gate pole threshold voltage
Temperature correction coefficient is fitted determining α value using databook；
Step 2.2: insulated gate bipolar transistor equivalent transconductance temperature correction coefficient is determined according to the following formula:
Wherein, β is insulated gate bipolar transistor equivalent transconductance temperature correction coefficient, is fitted determining β using databook
Value；
Step 2.3: the anti-recovery charge temperature correction coefficient of PIN diode is determined according to the following formula:
Wherein, QrrIt is the anti-recovery charge of PIN diode, γ is the anti-recovery charge temperature correction coefficient of PIN diode, utilizes data
Handbook is fitted the value of determining γ；
Step 2.4: PIN diode reverse recovery time temperature correction coefficient is determined according to the following formula:
Wherein, trrIt is PIN diode reverse recovery time, η is PIN diode reverse recovery time temperature correction coefficient, utilizes data
Handbook is fitted the value of determining η；
Step 2.5: insulated gate bipolar transistor on-state voltage drop temperature correction coefficient is determined according to the following formula:
Vsat(Tj)=Vsat(T0)+κ(Tj-T0)
Wherein, VsatIt is insulated gate bipolar transistor on-state voltage drop, κ is that insulated gate bipolar transistor on-state voltage drop temperature is repaired
Positive coefficient is fitted the value of determining κ using databook.
4. the transient state piecewise analysis model according to claim 3 for IGBT and PIN diode convertor unit, feature
Be: the transient process of opening in the step 3 is divided into six stages；Stage 1 is that transient process starts until collector electricity
Stream is begun to ramp up, and the stage 2 is that collector current is begun to ramp up until collector current rises to load current, and the stage 3 is current collection
Electrode current rises to load current and rises to maximum value to collector current, and the stage 4 is that collector current rises to maximum value and arrives
Collector current drops to load current, and the stage 5 is that collector current drops to load current until tube voltage drop drops to Miller
The sum of level and capacitor transfer point voltage, the stage 6 be tube voltage drop drop to the sum of Miller level and capacitor transfer point voltage until
Tube voltage drop drops to on-state voltage drop；Wherein, the stage 1,2 and 3 is using the current source-voltage source mode modeling, stage 4,5 and 6
Using the voltage source-current source mode modeling.
5. the transient state piecewise analysis model according to claim 4 for IGBT and PIN diode convertor unit, feature
Be: the shutdown transient process in the step 3 is divided into six stages；Stage 1 is that transient process starts to open until tube voltage drop
Begin to rise, the stage 2 is that tube voltage drop is begun to ramp up until tube voltage drop rises to the sum of Miller level and capacitor transfer point voltage, stage
3 be that tube voltage drop rises to the sum of Miller level and capacitor transfer point voltage until tube voltage drop rises to DC bus-bar voltage, stage 4
It is that tube voltage drop rises to DC bus-bar voltage until the half of collector current fast drop course, the stage 5 is collector current
The half of fast drop course drops to tail currents until collector current, and the stage 6 is that collector current drops to hangover electricity
Stream drops to zero until collector current；Wherein, the stage 1,2 and 3 is using the voltage source-current source mode modeling, stage 4,5
With 6 using the current source-voltage source mode modeling.
6. the transient state piecewise analysis model according to claim 5 for IGBT and PIN diode convertor unit, feature
Be: six convertor units open the expression formula in the voltage and current source in transient process stage in the determining step 3 of the step 4,
According to current source-voltage source mode, then insulated gate bipolar transistor is modeled as current source, and current expression is denoted as ic, PIN
Diode is modeled as voltage source, and voltage expression is denoted as vD；According to voltage source-current source mode, insulated gate bipolar crystal
Pipe is modeled as voltage source, and voltage expression is denoted as vce；PIN diode is modeled as current source, and electric current is denoted as iD；
Step 4.1: opening transient process stage 1, i.e. [t0,t1], using current source-voltage source mode, insulated gate bipolar crystal
Pipe is modeled as current source, ic=0；PIN diode is modeled as voltage source, vD=0；DurationWherein tdonIt is turn on delay time；τ1It is time constant, expression formula τ1=(Cge+
Cgc)(RGon+RGint), RGonIt is gate pole open resistance, RGintIt is resistance in gate pole；VGonIt is driving conducting voltage, VGoffIt is driving
Turn off voltage；
Step 4.2: opening transient process stage 2, i.e. [t1,t2], using current source-voltage source mode, insulated gate bipolar crystal
Pipe is modeled as current source, ic=K (vge-VT)2；PIN diode is modeled as voltage source, vD=0；DurationWherein trIt is rise time, VmlIt is Miller level, expression formula Vml=vge(t2)=vge
(ic=IL), ILIt is load current, vgeExpression formula be
Step 4.3: opening transient process stage 3, i.e. [t2,t3], using current source-voltage source mode, insulated gate bipolar crystal
Pipe is modeled as current source, ic=K (vge-VT)2；PIN diode is modeled as voltage source, vD=0；DurationWherein VgerrIt is the gate voltage spike of anti-recovery process, expression formula isvgeExpression formula be
Step 4.4: opening transient process stage 4, i.e. [t3,t4], using voltage source-current source mode, insulated gate bipolar crystal
Pipe is modeled as voltage source,Wherein igonIt is opening process gate pole charging electricity
Stream, expression formula arePIN diode is modeled as current source,Duration is according to t4-
t2=trrIt determines；
Step 4.5: opening transient process stage 5, i.e. [t4,t5], using voltage source-current source mode insulated gate bipolar crystal
Pipe is modeled as voltage source,It is identical as the stage 4；PIN diode modeling
For current source, iD=0；Duration according toIt determines；
Step 4.6: opening transient process stage 6, i.e. [t5,t6], using voltage source-current source mode, insulated gate bipolar crystal
Pipe is modeled as voltage source, vce=Vlim+Vml-igon(t-t5)/Coxd；PIN diode is modeled as current source, iD=0；Duration
According to t6=t (vce=Vsat)=t5+Coxd(Vlim+Vml-Vsat)/igonIt determines.
7. the transient state piecewise analysis model according to claim 5 for IGBT and PIN diode convertor unit, feature
Be: the step 5 determines the expression of convertor unit shutdown the transient process each stage voltage and current source in the step 3
Formula, according to current source-voltage source mode, then insulated gate bipolar transistor is modeled as current source, and current expression is denoted as ic,
PIN diode is modeled as voltage source, and voltage expression is denoted as vD；According to voltage source-current source mode, insulated gate bipolar is brilliant
Body pipe is modeled as voltage source, and voltage expression is denoted as vce；PIN diode is modeled as current source, and electric current is denoted as iD；
Step 5.1: shutdown transient process stage 1, i.e. [t7,t8], using current source-voltage source mode, insulated gate bipolar crystal
Pipe is modeled as voltage source, vce=Vsat；PIN diode is modeled as current source, iD=0；Duration according toIt determines, wherein tdoffIt is off delay time；τ2It is time constant, expression formula τ2
=(Cge+Cgc)(RGoff+RGint), RGoffIt is gate pole shutdown resistance；
Step 5.2: shutdown transient process stage 2, i.e. [t8,t9], using voltage source-current source mode, insulated gate bipolar crystal
Pipe is modeled as voltage source,Wherein igoffIt is off process gate pole discharge current, expression formula isPIN diode is modeled as current source, iD=0；Duration is according to t9-t8=(Vlim+Vml-Vsat)
Coxd/igoffIt determines；
Step 5.3: shutdown transient process stage 3, i.e. [t9,t10], using voltage source-current source mode mode, insulated gate bipolar
Transistor npn npn is modeled as voltage source,PIN diode is modeled as current source, iD=0；
Duration according toIt determines；
Step 5.4: shutdown transient process stage 4, i.e. [t10,t11], using current source-voltage source mode mode, insulated gate bipolar
Transistor npn npn is modeled as current source,WhereinIt is off process electric current maximum rate of change, table
It is up to formulatfastIt is electric current fast duration decline stage, ttailIt is that electric current drags
Tail phase duration, ItailIt is tail currents；PIN diode is modeled as voltage source, vD=0；Duration is according to t11-t10=
tfast/ 2 determine；
Step 5.5: shutdown transient process stage 5, i.e. [t11,t12], using current source-voltage source mode, insulated gate bipolar is brilliant
Body pipe is modeled as current source,PIN diode is modeled as voltage
Source, vD=0；Duration is according to t12-t11=tfast/ 2 determine；
Step 5.6: shutdown transient process stage 6, i.e. [t12,t13], using current source-voltage source mode, insulated gate bipolar is brilliant
Body pipe is modeled as current source,PIN diode is modeled as voltage source, vD=
0；Duration is according to t13-t12=ttailIt determines.
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