CN114675119A - Semiconductor power device reliability detection box and detection method - Google Patents
Semiconductor power device reliability detection box and detection method Download PDFInfo
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- CN114675119A CN114675119A CN202210605752.5A CN202210605752A CN114675119A CN 114675119 A CN114675119 A CN 114675119A CN 202210605752 A CN202210605752 A CN 202210605752A CN 114675119 A CN114675119 A CN 114675119A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention discloses a reliability detection box and a detection method for a semiconductor power device, wherein the reliability detection box comprises a reliability adapter plate, a heating system and a control system; placing the power device in a reliability adapter plate experiment, and providing the required detection temperature by a heating system; the control system controls the temperature change of the heating system, performs temperature change cyclic detection, and monitors leakage current in the detection process; and when the leakage current of the power device exceeds the standard, the control system cuts off the power supply of the power device with the leakage current exceeding the standard and displays the clamp seat code of the power device. The invention is easy to realize, has high detection reliability and low detection cost.
Description
Technical Field
The invention relates to the technical field of semiconductor power devices and power electronics, in particular to a reliability detection method for reducing the on-board failure rate of a plastic package semiconductor power device.
Background
The plastic package semiconductor power device is the most widely applied electronic element power device, and in order to ensure the quality of various plastic package semiconductor power devices, a plurality of specific quality detection and detection methods and corresponding test standards are provided according to the manufacturing process characteristics, material characteristics and application environment of the semiconductor power devices, typically, such as GJB548B, GJB7400-2011, GJB33A and the like. As a method for evaluating the quality of a plastic package power device, for example, when temperature shock detection is performed, the temperature environment where the power device is located is unchanged, the power supply voltage is unchanged, and the semiconductor chip in the cured plastic package is in a relatively stable state, the detection method cannot sufficiently determine the influence of the semiconductor chip of the plastic package material and the tightness and stability between the plastic package material and the chip.
Generally, in the plastic package process of a plastic package semiconductor, a cavity and a delamination phenomenon easily occur in a plastic package body, once the phenomenon occurs, the quality and the reliability of a plastic package power device are affected to a certain extent, although the delamination and the cavity can be detected by utilizing X-ray and acoustic scanning, how to evaluate the influence of the delamination and the cavity on the characteristics and the reliability of the power device is short of an effective method. The existence of the holes and the separation layers can cause the power device to absorb moisture and store water vapor in the holes and the separation layers, so that the quality of the power device is reduced, the reliability or the service life can be reduced, and in severe cases, the phenomenon of popcorn, namely the phenomenon of explosion is caused.
In the packaging process, if the epoxy material and the heat conducting filler are contaminated by inorganic and organic matters such as Na, K, Ca, Mg, Fe, Cu, Cr, Ni, Cl, S, Br, etc., in the packaging process, these ions or atoms (or molecules) will form deposition regions on the surface and side surfaces of the chip along with the progress of the process, which will affect the electrical parameter index and temperature (environment) stability of the semiconductor chip to a certain extent, and how to evaluate the influence of the purity of the packaging material on the characteristics and reliability of the power device is also lacking a corresponding method.
Because of the lack of a method for evaluating the characteristics of the power device by cavities and layers between the cured epoxy resin and the heat-conducting filling material thereof and the semiconductor chip, and the lack of a theory and a detection method for evaluating the characteristics of the power device by the content and distribution of impurity ions in the epoxy resin, a specific quantitative relation of how impurity elements affect the semiconductor power device cannot be obtained, and because the cavities, the layers and the impurity elements really affect the semiconductor chip, the research and development of one or more methods for evaluating the influence becomes a technical problem which needs to be solved urgently at present.
Disclosure of Invention
The invention aims to provide a reliability detection method of a packaged semiconductor power device, which is realized by a reliability detection box. The reliability of the semiconductor power device is determined by loading the reliability detection voltage to the semiconductor power device in the temperature change circulation process, and monitoring the leakage current change of the semiconductor power device in real time.
In order to achieve the purpose, the technical scheme provided by the invention is that the semiconductor power device reliability detection box comprises a box body, wherein a power device reliability adapter plate, a heating system and a control system are arranged in the box body; the power device reliability adapter plate comprises a plurality of power device clamping seats, and the power device clamping seats are respectively connected with a reliability detection power supply; the heating system provides a required detection temperature; the control system controls the temperature change of the heating system, and the on-off of the power supply of each power device and the real-time monitoring of leakage current, and when the leakage current of the power device exceeds the standard, the control system cuts off the power supply of the power device with the leakage current exceeding the standard and displays a clamping seat code of the power device.
Preferably, the power device reliability adapting board comprises a PCB circuit board, and the power device holder is arranged on the PCB circuit board; preferably, the PCB is connected to a reliability detection power supply.
Preferably, the leakage current of the power device is detected by a current detection meter after passing through the leakage current amplification unit, and the current detection meter is connected with the control system.
Preferably, the heating system further comprises a soaking fan, and the box body is provided with a hot air outlet and a cold air inlet.
The invention also provides a method for detecting the reliability of the semiconductor power device, which comprises the following steps:
1) placing a semiconductor power device in a reliability detection box, and loading a reverse bias direct current voltage to a specified value;
2) carrying out temperature change cyclic detection, and monitoring the drain current change condition of a power device drain-source, gate-source or gate-drain in the detection process; in the detection process, if the leakage current is always within the specified range, the power device is judged to be qualified; and when the leakage current exceeds the standard, judging that the current is unqualified.
Preferably, in step 2), the temperature change cycle detection includes several cycles of temperature rise, constant temperature and temperature fall.
Preferably, in step 2), the cycle detection time of the temperature change is not more than 168 hours, and the cycle number is not less than 5 times.
Preferably, in the step 2), the speed of temperature rise or temperature drop is 300-500 ℃/h; the time for heating or cooling is 0.25-2 h.
Preferably, in each temperature rising, constant temperature and temperature lowering process, when the leakage current of the power device exceeds the standard, the quality problem of the devices in the batch is judged; after the devices with the leakage current exceeding the standard are removed, the rest devices are continuously subjected to reverse aging, and the devices with the leakage current exceeding the standard are still detected, and the devices in the batch are judged to be the devices with unqualified quality; and when the total leakage current exceeds the standard, the device is close to or higher than 30%, judging that the devices in the batch are completely unqualified.
Preferably, in each heating, constant temperature and cooling cycle test process, unqualified devices are removed, and the rest devices are continuously aged; and when the phenomenon that the electric leakage of the device exceeds the standard is generated in the total three temperature change cycle detections, the back-biased aging work is stopped, and the quality of the devices in the batch is judged to be unqualified.
The principle of the reliability detection method of the invention is as follows: in the production process of semiconductor power device chips, the chips are protected by surface passivation. Except for the glass passivation material, the self thermal expansion coefficient of the rest passivation materials is equal to that of Si and Si02All have stress problems, if the quality of the passivation layer is not good or the passivation layer is not made in the wafer production process, and if the selection of the epoxy material and the corresponding filling material is not proper in the packaging process, the electrical parameters are sensitive to temperature and stress after the packaging of the semiconductor chip is finished, and dynamic double-effect occurs under the change of the electrical stress and the temperature stressThe electrical parameters under heavy action are degraded, thereby causing quality and reliability problems of the semiconductor chip after packaging, and affecting normal use.
The detection method of the invention is supplementary and perfect to the quality consistency test method of the existing power device. The temperature variation is equivalent to adding stress to the aged device, changing from constant temperature stress to alternating temperature stress, so as to fully simulate the cyclic working process of power-on-power-off-power-on-power-off again in the device application process.
The invention has the beneficial effects that:
through carrying out leakage current monitoring in the temperature variation cyclic process, can effectively discover the problem in the aspect of encapsulation quality, for example: when the quality of the plastic packaging material and the quality of the packaging process are not good, the leakage current between a drain electrode and a source electrode is very stable and cannot exceed the standard when the power device is reversely biased at constant voltage, constant temperature and high temperature; however, when the constant voltage, constant temperature and high temperature reverse bias are carried out and the temperature rise-constant temperature-temperature drop detection is carried out at a certain temperature change speed, a power device which is made of poor materials or has low packaging process quality can show that the leakage current of the power device exceeds the standard in the temperature change process in the temperature change reverse bias state, and the method has certain practicability, effectiveness and accuracy when being used for detecting the quality of an actual product.
The method provides a reverse verification or evaluation method for the quality of the plastic packaging material and the quality of the plastic packaging process, adds a means for verifying the quality of the plastic packaging material and the quality of the plastic packaging process, and is supplementary and perfect for the quality detection method of the existing plastic packaging power device.
The influence of the cavity and the delamination on the electrical parameters of the power device in the plastic packaging process can be revealed or evaluated to a certain extent, and with the deep research, a reference method is provided for evaluating and defining the influence of the cavity and the delamination on the plastic packaging power device.
The method is beneficial to researching and judging the influence degree of the heat-conducting filler of the solidified plastic packaging material, the porosity of the plastic packaging body and the moisture absorption degree on the electrical parameters of the power device.
The experimental method is simple and easy to realize, and has good field operability; has good cost performance.
Drawings
FIG. 1 is a schematic diagram of a reliability detection box.
Fig. 2 is a schematic structural diagram of an adapter board of the aging power device.
Fig. 3 is a leakage current amplifying unit circuit diagram.
Fig. 4 is a circuit diagram of a heating system.
Figure 5 is a heating waveform on a resistor.
Detailed Description
With respect to the above technical solutions, preferred embodiments are described in detail with reference to the drawings.
The semiconductor power device 100 of the present invention is: reverse bias aging of drain-source and gate-source of various power MOSFET tubes; reverse bias aging of collector-emitter or emitter-base of various bipolar triodes; the grid electrode of the junction field effect transistor is subjected to reverse bias aging; and reverse bias aging of the diode.
The reliability detection box can be obtained by market. The general structure is that, referring to fig. 1, the device comprises an openable box 20 with a door, a heating system 21 is arranged at the bottom of the box 20 to heat the box, and the heating system circuit diagram refers to fig. 4 to regulate the temperature in the box. The heating system 21 further includes a soaking fan 22 provided in the cabinet to make the temperature in the cabinet uniform. A hot air port block 23 and a cold air port block 24 are arranged on one side of the box body; the hot air port blocking block is used for discharging high-temperature gas during cooling; the cold air inlet blocking block is used for entering a cold air inlet when cooling is performed; the purpose is to rapidly cool.
A power device aging adapter board 25 is placed in the case 20, and referring to fig. 1 and 2, the power device aging adapter board 25 is supported by a support 26 in the case. The power device aging adapter board 25 comprises a high-temperature-resistant PCB (printed circuit board) 251, a plurality of power device clamp seats 252 are arranged on the PCB 251, the power device clamp seats 252 are electrically connected with the PCB 251, the PCB 251 is connected with each power device clamp seat 252, the PCB 251 is connected with an aging power supply, and aging voltage is provided for each power device clamp seat 252; meanwhile, the leakage current test end of the power device a of each power device holder 252 is connected to test the leakage current of each power device. The PCB 251 is provided with an electrical connection gold finger 253. The leakage current test needs to be connected with the current detection table 40 through the leakage current amplification unit 30 to detect the magnitude of the leakage current, the current detection table is connected with the control system to send a detection signal to the control system, so that the leakage current of the power device on each power device holder 251 can be detected, and meanwhile, whether the leakage current of the power device exceeds the standard or not is judged, namely whether the detected leakage current exceeds the rated value or not is judged. Referring to fig. 3, when the power device has no quality problem, the leakage current in the constant temperature or variable temperature aging process is very small, and is generally nA level under normal conditions. However, when the quality of the power device is not good, the leakage current can be increased from the nA level to the mA level or even higher, and the upper limit standard of the leakage current is set according to the characteristics of the power device. Under normal conditions, because the leakage current is very small, the leakage current amplifying unit 30 is connected into the current detection table 40 by a detection method of amplifying a current signal in equal proportion, the current detection table 40 is connected with a control system, the amplified leakage current is detected, and the detected leakage current increase value is as follows:
wherein: i is1Is the initial leakage current at the beginning of aging of the power device, I2Is the leakage current, R, of the power device after a certain aging time1For sampling resistance of leakage current, R3Adjusting R for gain proportional resistance3The detection sensitivity can be adjusted.
At varying temperatures for aging, when I2Above the specified requirements (equivalent to I)x) If the leakage current is larger than the specified value, the leakage current of the power device exceeds the standard, and the product quality is unqualified. When I is2And if the leakage current is always smaller than the specified value, the leakage current of the power device is qualified, and the product can enter the next detection link through aging detection.
The control system can be a singlechip and is used for controlling the real-time monitoring of the leakage current of each power device and judging whether the leakage current exceeds the standard or not; controlling the on-off of the aging power supply of each power device, when finding that the leakage current of a certain power device exceeds the standard, displaying the position code of the power device holder where the power device is located by the control system, simultaneously cutting off the aging power supply of the power device, and taking out the power device according to the power device holder code displayed by the control system; the control system also realizes the temperature rise, constant temperature and temperature reduction in the box body by controlling the heating system.
Controlling the temperature change time: and determining the aging time of the power device according to the GJB548B or GJB33A or GJB7400 and other standards. And after the aging time is up, starting to perform cooling detection without power failure, simultaneously monitoring leakage current, rapidly raising the temperature of the aging box to a specified value if the leakage current does not exceed the standard, and synchronously monitoring the leakage current in the temperature raising process, wherein the aged power device can be judged to be unqualified as long as the leakage current exceeds the standard no matter temperature is lowered, raised or kept at a constant temperature. The specific temperature variation mode is executed according to fig. 5, the 50Hz sawtooth wave 50, the temperature signal level 60, and the MOS switch tube operating state 70, and the abscissa is the time h.
In the heating temperature rise process, since thermal inertia exists, when the temperature approaches a predetermined temperature point, the energization time of the heating resistor is gradually reduced by a pulse width modulation control method, and the heating time is shortened as the temperature approaches a target temperature value. The time control is realized by the singlechip through programming.
The smaller the pulse width is, the shorter the heating time is, the slower the temperature rising speed is, and the temperature fluctuation in the box body can be better ensured not to exceed the specified value.
And (3) defining the excessive leakage current of the power device: the power device leakage current exceeds a rated value. When the leakage current is lower than the rated value and the quality of the power device is qualified, the rated value is as follows: and a predetermined upper limit of the leakage current of the power device.
The detection method comprises the following steps:
1) and inserting the semiconductor power device into a power device clamping seat in a power device aging adapter plate, confirming that the power device is reliably clamped, and placing the power device on a supporting frame in a reliability detection box body after checking no error. Connecting an aging power supply, and checking whether the electrical connection is correct; and confirming that the connection is correct, and loading the reverse biased and aged direct-current voltage to a specified value.
2) Starting a reliability detection box, carrying out temperature rise-constant temperature-temperature reduction cyclic aging, wherein the number of cyclic tests is determined according to the situation and is generally not less than 5, and continuously monitoring the leakage current change situation of the power device; and if the leakage current of the power device is qualified in each temperature change process and constant temperature process, judging that the power device is qualified.
2. 1) firstly, starting a reliability detection box, determining the temperature rise speed, raising the temperature to a specified temperature, and monitoring the change condition of the reverse bias current along with the temperature rise in the process. The temperature-rising speed is generally controlled to be 300-500 ℃/h, and the temperature-rising time is between 0.25-2 h.
If the leakage current of the aged power device is increased rapidly along with the rise of the temperature and exceeds a rated value, the leakage current is judged to exceed the standard; removing the power devices with the leakage current exceeding the standard, and continuously aging the rest power devices;
and if the leakage current of the power device close to or higher than 30% exceeds the rated value, judging that the power device is unqualified, taking out the unqualified power device, continuously aging the residual power device, and stopping the electric bias aging work if the unqualified power device is generated due to the temperature-variable reverse bias aging, so as to confirm that the quality of the power device in the batch is unqualified.
2. 2) constant temperature aging: if the leakage current of the aged power device is increased to some extent in the temperature rising process but does not exceed the rated value, the temperature in the box body is kept, the power device enters a constant-temperature reverse-biased aging state, an electrical stress and constant-temperature stress aging state is carried out for a certain time, and the leakage current change condition of the aged power device is continuously monitored and tested in the constant-temperature aging process;
in the constant-temperature aging process, if the leakage current of the power device exceeds the standard, judging that the power device is unqualified, taking out the unqualified power device, and continuously aging the residual power device;
if the leakage current of the power device close to or higher than 30 percent exceeds the rated value, the power device is judged to be unqualified, the unqualified power device is taken out, the remaining power device is continuously aged, if the unqualified power device appears due to the temperature-variable reverse bias aging, the electric bias aging work is stopped, and the quality of the power device in the batch is confirmed to be unqualified.
2. 3) cooling: if the leakage current of the device is qualified, the constant temperature time is up, and the temperature is reduced to the specified temperature at a certain cooling speed, so that the aged power device enters a variable stress state; meanwhile, the leakage current change situation in the period is monitored, if the leakage current of the power device exceeds the standard in the cooling process, the power device is judged to be unqualified, the unqualified power device is taken out, and the residual power device is continuously aged;
and if the leakage current of the power device close to or higher than 30% exceeds the rated value, judging that the power device is unqualified, taking out the unqualified power device, continuously aging the residual power device, and stopping the electric bias aging work if the unqualified power device is generated due to the temperature-variable reverse bias aging, so as to confirm that the quality of the power device in the batch is unqualified.
3) Repeating the test work of 2, 1) to 2, 3) under the condition of keeping the electrical stress, and carrying out multiple times of heating-constant temperature-cooling cycle tests on the power device; detecting the leakage current change condition of the power device in each temperature rising, constant temperature and temperature lowering process; and corresponding aging can be continuously carried out after the power devices with the leakage current exceeding the standard are removed.
In the multiple temperature rise-constant temperature-temperature reduction cycle test, the power devices with qualified leakage current are qualified products, and the power devices in the batch are considered to successfully pass the variable temperature aging detection under the electric stress, or the power devices pass the variable temperature stress detection under the electric-temperature dual stress, so that the next quality detection item can be entered.
In each temperature rising, constant temperature and temperature lowering process, when the leakage current of the power devices exceeds the standard, judging that the quality of the devices in the batch is poor; after the devices with the leakage current exceeding the standard are removed, the rest devices are continuously subjected to reverse aging, and the devices with the leakage current exceeding the standard are still detected, and the devices in the batch are judged to be the devices with unqualified quality; and when the total leakage current exceeds the standard, the device is close to or higher than 30%, judging that the devices in the batch are completely unqualified.
In each temperature change cyclic test process of temperature rise, constant temperature and temperature drop, unqualified devices are removed, and the rest devices are continuously aged; and when the phenomenon that the electric leakage of the device exceeds the standard is generated in the total three temperature change cycle detections, the back-biased aging work is stopped, and the quality of the devices in the batch is judged to be unqualified.
Depending on the customer requirements, stricter criteria may be: if only one power device has the phenomenon, the batch can be judged to be unqualified. And stopping the anti-bias aging work, confirming that the quality of the power devices in the batch has hidden troubles, and the corresponding products cannot be delivered because the production cannot be continued.
The cycle times and the intermediate constant temperature holding time of the variable-temperature double-stress reverse aging detection can be reasonably selected according to different power devices, generally, in the whole testing process, the total constant temperature time accumulated by the cycle times is less than or equal to 168 hours, the typical value of the temperature rising and lowering speed is 300-500 ℃/h, the maximum temperature rising and lowering time is 2h, and the minimum temperature rising and lowering time is 0.25 h.
By comprehensive consideration, the times of the heating-constant temperature-cooling cycle test by adopting the detection method of the invention are different according to different power devices, and different cycle test times are selected, but generally can not be lower than 5 times. When the power devices are placed in the box body and powered on, the power devices with excessive leakage current appear during the first round of temperature rise-constant temperature-temperature reduction, and the number of the excessive leakage current accounts for a certain proportion, the quality of the batch of products can be considered to be poor.
In the process of providing a product reliability detection service for a certain power device design company, variable-temperature aging detection under electrical stress is adopted. Aiming at the aging detection of MOSFET power devices of customers, by adopting the method, the leakage current of the power devices does not exceed a rated value all the time in the temperature rising-constant temperature process, and the following results are found in the first temperature lowering process: the power device in reverse biased aging (the grid and the source are grounded, and the drain is connected with high voltage), the leakage current is increased and exceeds the rated value of the specified leakage current of the product, the power device with the leakage current exceeding the standard is removed, the detection is continuously carried out according to the method, the leakage current exceeding the standard appears in the temperature reduction section of the power device, the leakage phenomenon discovered by the temperature-variable aging detection method shows that a certain procedure in the production process of the power device has problems, the product quality is adversely affected, and the power device in the batch is unqualified. After the discussion and analysis: the quality problem of the power device in the production process is confirmed, and the quality problem is better solved by improving the wafer passivation process and reselecting the plastic package material through the analysis of a wafer production company and a packaging company, so that the mass production of the product is smoothly realized.
The power device after the improved process is subjected to variable-temperature reverse-bias aging detection for 96 hours, reverse-bias cooling-heating cyclic detection is carried out for 8 times, the phenomenon of cooling and leakage does not occur, the phenomenon that leakage current exceeds the standard does not occur in each heating section and each constant-temperature section, the product smoothly passes through variable-temperature detection, and subsequent verification also shows that: the batch of power devices has good quality.
The method also states: by using the existing traditional quality detection method, the power device stably runs at high temperature, the product is judged to be qualified without electric leakage, the risk of misjudgment exists, the variable-temperature reverse-deviation detection is carried out on the sensitive electric parameters of the plastic package product under the voltage force, the quality of the product can be judged more effectively, and the product is ensured to be safer and more reliable.
After the method is used, the phenomenon of leakage current increase occurs in the cooling section because the interaction relationship between the plastic package body and the semiconductor chip is stronger in the quenching process, the quality problem of the power device can be truly and objectively reflected, the product quality control can be more effectively carried out, if the electrical index of the product can be ensured in the link, the product quality can be proved to be better, and a user can use the product safely according to the service life specification of the product.
Claims (10)
1. A semiconductor power device reliability detection box comprises a box body, and is characterized in that a power device reliability adapter plate, a heating system and a control system are arranged in the box body; the power device reliability adapter plate comprises a plurality of power device clamping seats, and the power device clamping seats are respectively connected with a reliability detection power supply; the heating system provides a required detection temperature; the control system controls the temperature change of the heating system, and the on-off of the power supply of each power device and the real-time monitoring of leakage current, and when the leakage current of the power device exceeds the standard, the control system cuts off the power supply of the power device with the leakage current exceeding the standard and displays a clamping seat code of the power device.
2. The case of claim 1, wherein the power device reliability adapter board comprises a PCB circuit board, the power device holder is disposed on the PCB circuit board, and the PCB circuit board is connected to a reliability detection power supply.
3. The box of claim 1, wherein the leakage current of the power device is detected by a current detection meter after passing through the leakage current amplification unit, and the current detection meter is connected with a control system.
4. The semiconductor power device reliability detection box according to claim 1, wherein the heating system further comprises a soaking fan, and a hot air outlet and a cold air inlet are provided on the box body.
5. A method for detecting the reliability of a semiconductor power device comprises the following steps:
1) placing a semiconductor power device in a reliability detection box, and loading a reverse bias direct current voltage to a specified value;
2) carrying out temperature change cyclic detection, and monitoring leakage current in the detection process; in the detection process, if the leakage current is always within the specified range, the power device is judged to be qualified; and when the leakage current exceeds the standard, judging that the device is unqualified.
6. The method for detecting the reliability of the semiconductor power device according to claim 5, wherein in the step 2), one temperature change cycle detection comprises three processes of temperature rise, constant temperature and temperature drop.
7. The method for detecting the reliability of the semiconductor power device according to claim 6, wherein in the step 2), the temperature change cycle detection time is not more than 168 hours, and the cycle number is not less than 5.
8. The method for detecting the reliability of the semiconductor power device according to claim 6, wherein in the step 2), the temperature rising or lowering speed is 300-500 ℃/h; the time for heating or cooling is 0.25-2 h.
9. The method for detecting the reliability of the semiconductor power device according to claim 6, wherein in each temperature rising, constant temperature and temperature lowering process, when the leakage current of the power device exceeds the standard, it is determined that the quality of the devices in the batch has a problem; after the devices with the leakage current exceeding the standard are removed, the rest devices are continuously subjected to reverse aging, and the devices with the leakage current exceeding the standard are still detected, and the devices in the batch are judged to be the devices with unqualified quality; and when the total leakage current exceeds the standard, the device is close to or higher than 30%, judging that the devices in the batch are completely unqualified.
10. The method for detecting the reliability of the semiconductor power device according to claim 6, wherein in each test process of the heating, constant temperature and cooling cycles, unqualified devices are removed, and the rest devices are continuously aged; and when the phenomenon that the electric leakage of the device exceeds the standard is generated in the total three temperature change cycle detections, the back-biased aging work is stopped, and the quality of the devices in the batch is judged to be unqualified.
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| CN116224038A (en) * | 2023-01-06 | 2023-06-06 | 法特迪精密科技（苏州）有限公司 | Chip seat of chip temperature cycle aging test board |
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