CN104601019A - Smart power module, power device and temperature detection circuit and method of power device - Google Patents
Smart power module, power device and temperature detection circuit and method of power device Download PDFInfo
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Abstract
The invention provides a smart power module, a power device and a temperature detection circuit and method of the power device. The temperature detection method includes: forming a temperature detection unit at the edge of an active area of the power device and extracting a first emitter electrode from the temperature detection unit; forming a first gate region on the active area and extracting a first gate electrode on the first gate region, wherein the temperature detection unit and the active area share one collector; detecting conduction voltage drop between the first emitter electrode and the collector in the conducting state; calculating junction temperature of the power device according to the change relation of the conduction voltage drop and the temperature. The temperature detection unit is integrated in the power device, cells of one part of the active area of the power device serve as the temperature detection unit, and junction temperature of the power device can be monitored in real time by aid of the change relation between leak currents and conduction voltage drop of the temperature detection unit in the conduction state along with the temperature.
Description
Technical field
The present invention relates to temperature detection technology, particularly relate to a kind of Intelligent Power Module, the temperature sensing circuit of power device and method.
Background technology
Intelligent Power Module (Intelligent Power Module, IPM) under the effect of control signal, direct voltage (electric current) can be transformed into amplitude and all variable alternating voltage (electric current) of frequency, the alternating voltage of output is loaded on motor and drives it to operate.Owing to having the advantages such as the high and good reliability of integrated level, Intelligent Power Module is widely applied to frequency control, in electric traction and frequency-conversion domestic electric appliances.Typical IPM module is made up of power semiconductor (power device), control and protection circuit.Power device is according to the difference of electric current, electric pressure, general employing metal-oxide semiconductor fieldeffect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, or igbt (Insulated Gate Bipolar Transistor, IGBT) MOSFET).Control and protection function adopts integrated circuit to realize.Because power device all can produce power consumption in conducting state and the switching instant turned on and off, therefore its junction temperature will far above the temperature of environment.By at IPM inside modules integrated temperature detecting unit, its temperature can be monitored in real time, guarantee the trouble free service of power device.
At present, IPM module extensively adopts thermistor to carry out the temperature of detection power device.In IPM module, thermistor and power device are arranged on the substrate of heat conduction jointly, because the requirement of electrical design rule has certain distance therebetween.When after IPM module work, inner power device can consume certain power and generate heat, and its power is between several watts to a few hectowatt.According to Fourier heat equation, heat can be delivered to thermistor from power device, and namely the change detecting thermistor resistance can detect the temperature of thermistor, namely can be obtained the temperature of power semiconductor by calibration.Be generally non-linear relation between the resistance of thermistor and temperature, need through computing in the real-time process of data or table look-up and just can provide temperature value.As patent application: a kind of temperature-controlled process of Intelligent Power Module and frequency conversion equipment (application number: 201310404618.X) and for the overheating protection circuit of Intelligent Power Module and control method (application number: the temperature checking method announced 201110147882.0) is all adopt thermistor thereof.
In actual applications, the thermal resistance from power device to thermistor can change along with the fluctuation of manufacturing process, and in addition, the resistance-temperature characteristics of thermistor also can the precision of appreciable impact detected temperatures.Therefore the precision of this method detected temperatures and accuracy are by the impact of Intelligent Power Module internal structure.In transient process, the conduction of heat is subject to the thermal resistance R of system
thwith thermal capacitance C
thimpact, the Temperature Distribution in the thermal time constant (be defined as the product of thermal resistance and thermal capacitance, be about tens microseconds to several millisecond) through 3 to 5 times afterwards system just tends towards stability.Therefore this method can not the instantaneous variations injunction temperature of detection power device.
Summary of the invention
Based on this, be necessary to provide a kind of can the temperature sensing circuit of power device of instantaneous variations injunction temperature of detection power device.
A temperature sensing circuit for power device, comprising:
Temperature detecting unit, is formed in the edge of the active area of power device, and draws the first emitter electrode on this temperature detecting unit;
First grid polar region, is formed on described active area, and first grid electrode is drawn in this first grid polar region, and described temperature detecting unit and described active area share a collector electrode;
Sampling unit, is connected with the collector electrode of described temperature detecting unit and the first emitter electrode, detects conduction voltage drop in the on-state between described collector electrode and the first emitter electrode;
Arithmetic element, is connected with described sampling unit, calculates the junction temperature of described power device according to the variation relation of described conduction voltage drop and temperature.
In addition, also carried a kind of temperature checking method of power device, comprised the following steps:
At the edge formation temperature detecting unit of the active area of power device, and draw the first emitter electrode on this temperature detecting unit;
Formation first grid polar region on described active area, and first grid electrode is drawn on this first grid polar region, wherein, described temperature detecting unit and described active area share a collector electrode;
Detect conduction voltage drop in the on-state between described first emitter electrode and collector electrode;
The junction temperature of described power device is calculated according to the variation relation of described conduction voltage drop and temperature.
In addition, also carried a kind of power device, comprised the temperature sensing circuit of above-mentioned power device.
In addition, also put forward a kind of Intelligent Power Module, comprised the power device that at least one is above-mentioned.
The temperature sensing circuit of above-mentioned power device and method are by set temperature detecting unit on power device, temperature detecting unit is integrated in power device inside, adopt the part active area cellular of power device as temperature detecting unit, by the conduction voltage drop of temperature detecting unit under detection conducting state, utilize leakage current and conduction voltage drop variation with temperature relation, the junction temperature of monitor power device that can be real-time.
Accompanying drawing explanation
Fig. 1 (a) is for being the structure chart of the power device described in Fig. 1 in one embodiment of the invention;
Fig. 1 (b) is circuit diagram corresponding to the structure chart of the power device shown in Fig. 1 (a);
Fig. 2 (a) is for being the structure chart of the power device described in Fig. 1 in another embodiment of the present invention;
Fig. 2 (b) is circuit diagram corresponding to the structure chart of the power device shown in Fig. 2 (a);
Fig. 3 is the structure principle chart of the temperature sensing circuit of the power device that Fig. 1 (b) illustrates;
Fig. 4 is the structure principle chart of the temperature sensing circuit of the power device that Fig. 2 (b) illustrates;
Fig. 5 gives conduction voltage drop V
cewith the curve chart changed with junction temperature T;
Fig. 6 gives leakage current l
ceswith the curve chart changed with junction temperature T.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Conventional power semiconductor, as MOSFET, IGBT etc., its structure comprises two parts: (1) is positioned at the withstand voltage region of chip edge, guarantees that device can bear when turning off certain withstand voltage; (2) be positioned at the active region of chip internal, active region is made up of the cellular that various structure is identical, and when devices function is in conducting state, each cellular flows through certain electric current.
Refer to Fig. 1 (a), Fig. 1 (b), Fig. 2 (a), Fig. 2 (b), Fig. 3 and Fig. 4, in present pre-ferred embodiments, the temperature sensing circuit of power device comprises temperature detecting unit 114, first grid polar region 130, sampling unit 20 and arithmetic element 30.
In the present invention, the active area 110 of power device cell region of generating heat is divided into two parts, a part for transmitting the electric current under conducting state, namely main active area 112, another part compared with the secondary active area in the region of small size, as temperature detecting unit 114.And, based on main active area 112, form conventional main power device Q1 respectively, form detection means T1 with temperature detecting unit 114.
It can thus be appreciated that the active area 110 of power device is the main active area 112 comprising main power device Q1, and the secondary active area (temperature detecting unit 114) of the detection means T1 formed in the periphery of this main active area 112.Namely temperature detecting unit 114 is formed in the edge of the active area 110 of power device, and the withstand voltage zone 120 of main power device Q1 then setting is positioned at the periphery of temperature detecting unit 114.In addition, this temperature detecting unit 114 is drawn the first emitter electrode E1, main active area 112 is drawn the second emitter electrode E2.First emitter electrode E1 is as the output electrode of temperature detecting unit 114 temperature detection signal.
Grid set-up mode about power device has two kinds of execution modes, is respectively:
The first: refer to Fig. 1 (a) and Fig. 1 (b), active area 110 is formed first grid polar region 130, first grid electrode G1 is drawn in first grid polar region 130, first grid electrode G1 is the control electrode of main power device Q1 and detection means T1, namely owner's power device Q1 and detection means T1 common gate, be operated in identical operating state.
The second: the first: refer to Fig. 2 (a) and Fig. 2 (b), active area 110 is being formed with first grid polar region 130, and first grid polar region 130 is drawn on the basis of first grid electrode G1.Also on temperature detecting unit 114, form second gate polar region 140, and the second grid electrode G2 be electrical connected with it is set on this second gate polar region 140.In the present embodiment, first grid electrode G1 as the control electrode of main power device Q1, second grid electrode G2 as the control electrode of detection means T1, for connecing control level to control the opening and closing of detection means T1.
In addition, this temperature detecting unit 114 shares same collector electrode C with the main active area 112 of main power device Q1, and collector electrode C is positioned at the back side of chip.
Refer to Fig. 3 and Fig. 4, collector electrode C and the first emitter electrode E1 of sampling unit 20 and temperature detecting unit (detection means T1) are connected, conduction voltage drop V in the on-state between detected set electrode C and the first emitter electrode E1
ce.
Arithmetic element 30 is connected with sampling unit 20, according to conduction voltage drop V
cewith the junction temperature T of the variation relation rated output device (above-mentioned power device or main power device Q1) of temperature T.Finally the magnitude of voltage V_sense1 value of (direct ratio) is answered to export with the temperature T-phase of amplifying circuit output and power device.
In more detail, when temperature detecting unit 114 is in conducting state.With reference to figure 3 and Fig. 4, in three-phase inverting circuit, in a certain sampling instant, by the electric current of reconstruct U, V, W three-phase that the voltage on sampling resistor R can be real-time, and then a certain electric current gone up brachium pontis or lower brachium pontis power device mutually and flow through of sampling instant can be determined.And in the present embodiment, under temperature detecting unit 114 can be operated in a specific electric current.Voltage between the collector electrode C of temperature detecting unit 114 and the first emitter electrode E1 can be obtained by sampling hold circuit.Conduction voltage drop V between collector electrode C and the first emitter electrode E1
ceand be that linear relationship meets following formula between temperature T:
Wherein, the junction temperature of power device described in T, V
cefor detected conduction voltage drop size, V
ce0junction temperature for power device is T
0time conduction voltage drop size, T
0for the thermal constant of power device, between 25 DEG C to 100 DEG C, γ is thermal constant.Fig. 5 gives conduction voltage drop V
cewith the relation curve of temperature T.
Adopt in this way, can the be real-time junction temperature of all power devices be monitored, and the shortcoming adopting thermistor detection power device junction temperature at present can be avoided.
In one embodiment, the area of temperature detecting unit 114 is less than 10% of the area of active area 110.Temperature detecting unit 114 at least will have the area of several cellular, and the upper limit of area is mainly subject to the consideration of practicality and cost.For the IPM module on convertible frequency air-conditioner, the area of temperature detecting unit 114 is 10% of power device active area 110 area to the maximum, and minimum area is 0.0001% of active area 110 area.In typical case, the area of temperature detecting unit 114 be power device active area 110 area 0.1% to 2% between.Take rated current as the IGBT of 15A be example, if temperature detecting unit 114 takies the area of 1%, the grade of its rated current is 0.15A, negligible on the impact of systematic function and cost.
Compare with the power device of routine, the power device that the present invention proposes adds one or two electrodes, the first emitter electrode E1 of detection means (as IGBT) T1 and and first grid electrode G1.For Fig. 2 (a), the first grid electrode G1 of main power device Q1 and the second grid electrode G2 of detection means T1 has identical current potential within the temperature detection cycle, in the non-temperature detection cycle, the grid G 2 of main power device Q1 connects control signal, and the second grid electrode G2 of detection means T1 can connect control signal or high level (conducting state) can.
When the second grid electrode G2 of detection means T1 and the first grid electrode G1 of main power device Q1 is high level (representative value is 15V), temperature detecting unit 114 is operated in voltage detection mode.By detecting conduction voltage drop V
ceprovide the junction temperature T of main power device.With the rising of temperature, conduction voltage drop V
celinear increase, as shown in Figure 3.
In circuit shown in Fig. 3 and Fig. 4, P and N is respectively anode and the negative terminal of DC bus.R is current sampling resistor.U, V and W are the output of three-phase alternating voltage.Q1, Q2, Q3, Q4, Q5, Q6 are the main power device in three-phase inverting circuit, can be IGBT or MOSFET, and reverse parallel connection fast recovery diode.In addition, in main power device Q1, detection means T1 is integrated with.The collector electrode of detection means T1 is connected with diode DR1 as isolation.
In Fig. 3, when the control electrode (first grid electrode G1) of main power device Q1 and detection means T1, during input high level; In Fig. 4, when the second grid electrode G2 input high level of detection means T1; Voltage difference now between the first emitter electrode E1 pin of detection means T1 and diode DR1 positive pole pin is conduction voltage drop V
ce, conduction voltage drop V
cesize and temperature T linear, its size is between 0.5 volt to 2.5 volts.After follow-up amplifying circuit (being located at arithmetic element 30), obtain the junction temperature size that this signal of voltage signal V_sense1 be directly proportional to junction temperature T can be used for presenting power device.
In another embodiment, sampling unit 20 is also for detecting described collector electrode C and the described first emitter electrode E1 leakage current l in the off case of detection means T1
ces; Arithmetic element 30 is also for calculating the junction temperature of described power device according to the variation relation of described leakage current and temperature.Particularly, the leakage current l under off state
cesfor the electric current between the collector electrode C of temperature detecting unit 114 and the first emitter electrode E1.Arithmetic element 30 finally exports with amplifying circuit and the temperature T-phase of power device answers the magnitude of voltage V_sense1 of (direct ratio).
In more detail, when temperature detecting unit 114 is in off state.Reverse bias voltage is subject between the collector electrode C of temperature detecting unit 114 and the first emitter electrode E1.Electric current between collector electrode C and the first emitter electrode E1 is mainly the leakage current l of reverse-biased PNP transistor
ces.With the rising of temperature, the leakage current l between collector electrode C and the first emitter electrode E1
cesexponentially increase, variation relation meets following formula:
Wherein, T is the junction temperature of detected power device, l
cesfor detected described leakage current, l
ces0is T for detected power device in junction temperature
0time leakage current, T
0for the thermal constant of power device, between 25 DEG C to 100 DEG C, β is thermal constant.Fig. 6 gives l
ceswith the relation curve of temperature T.
In a further embodiment, first to leakage current l
cessample, and change into voltage signal.Voltage signal, after logarithmic operational circuit process, meets following formula:
v
ces＝l
ces*r (3)
v
ces0＝l
ces0*r (4)
l
ces＝l
ces0*exp(β*(T-T
0) (5)
V_sense1＝ln(v
ces) (6)
V_sense1_0＝ln(v
ces0) (7)
Wherein, r is the dividing potential drop resistance of the magnitude of voltage of leakage current conversion, v
cesfor the magnitude of voltage of detected described leakage current conversion, v
ces0for the junction temperature of detected power device is T
0time leakage current conversion magnitude of voltage.Finally export with amplifying circuit and magnitude of voltage V_sense1 that the temperature T of power device is directly proportional.
Adopt in this way, can the be real-time junction temperature of all power devices be monitored, and the shortcoming adopting thermistor detection power device junction temperature at present can be avoided.
In the present embodiment, the first grid electrode G1 of main power device Q1 connects control signal, and the second grid electrode G2 of detection means T1 can connect control signal or low level (off state) can.
When the second grid electrode G2 of detection means T1 and the first grid electrode G1 of main power device Q1 is low level (typical voltage is 0V), temperature detecting unit 114 is operated in amperometric detection mode.By detecting leakage current l
cesprovide the junction temperature T of power device.With the rising of temperature, leakage current l
cesindex increases, as shown in Figure 6.
In Fig. 3, when the control electrode (first grid electrode G1) of main power device Q1 and detection means T1, during input low level; In Fig. 4, when the second grid electrode G2 input low level of detection means T1, direct voltage now between the anode P of DC bus and negative terminal N is added on main power device Q1 and detection means T1, and output electrode (the first emitter electrode) the E1 pin of detection means T1 exports temperature variant leakage current l
ces, leakage current l
cessize and temperature, the overcurrent cross-sectional area of output electrode E1 is relevant with the technique of power device, its size several receive peace change between hundreds of microampere.A voltage signal is obtained by the sampling of sampling unit 20 and holding circuit.Adopt traditional switched-capacitor circuit then can realize sampling and the maintenance of electric current.In the sampling period of signal, electric current is to capacitor charging; At hold period subsequently, signal is exaggerated process.After follow-up logarithmic operational circuit, obtain a voltage signal V_sense1 be directly proportional to temperature, this signal can be used for presenting the junction temperature size of power device.
Similar, by adding temperature detecting unit 114 in power device Q2, Q3, Q4, Q5, Q6, its junction temperature of monitoring that also can be real-time.This method is not only suitable for for three-phase inverting circuit, for other similar modules containing power device or circuit applicable equally.
In addition, in one embodiment, additionally provide a kind of temperature checking method of power device, comprise the following steps:
Step one, at the edge formation temperature detecting unit of the active area of power device, and draws the first emitter electrode on this temperature detecting unit;
Step 2, the formation first grid polar region on described active area, and first grid electrode is drawn on this first grid polar region, wherein, described temperature detecting unit and described active area share a collector electrode;
Step 3, detects conduction voltage drop in the on-state between described first emitter electrode and collector electrode;
Step 4, calculates the junction temperature of described power device according to the variation relation of described conduction voltage drop and temperature.
In another embodiment, also on described temperature detecting unit, form second gate polar region, and draw the step of second grid electrode on this second gate polar region.
Particularly, the variation relation of described conduction voltage drop and temperature meets following formula:
Wherein, the junction temperature of power device described in T, V
cefor detected described conduction voltage drop size, V
ce0junction temperature for described power device is T
0time described conduction voltage drop size, T
0for the thermal constant of power device, between 25 DEG C to 100 DEG C, γ is thermal constant.
Further, described temperature detecting unit is identical with the structure cell of the active area of described power device.
Further, the area of described temperature detecting unit is less than 10% of the area of described active area.
In another embodiment, additionally provide the temperature checking method of another kind of power device, further comprising the steps of:
Step 5, detects described collector electrode and described first emitter electrode leakage current in the off case;
Step 6, calculates the junction temperature of described power device according to the variation relation of described leakage current and temperature.
Further, first leakage current is converted to voltage signal, in the temperature of rated output device.
Further, the variation relation of described leakage current and temperature meets following formula:
Wherein, the junction temperature of power device described in T, l
cesfor detected described leakage current, l
ces0junction temperature for described power device is T
0time described leakage current, T
0for the thermal constant of power device, between 25 DEG C to 100 DEG C, β is thermal constant.
In addition, additionally provide a kind of power device, it comprises the temperature sensing circuit of above-mentioned power device.
In addition, additionally provide a kind of Intelligent Power Module, comprise power device described at least one.
So, be provided with the temperature sensing circuit of above-mentioned power device, utilize the junction temperature of said method detection power device or Intelligent Power Module, can by set temperature detecting unit on power device, temperature detecting unit is integrated in power device inside, adopt the part active area cellular of power device as temperature detecting unit, by detecting the conduction voltage drop of temperature detecting unit under the leakage current of temperature detecting unit under off state and conducting state, utilize leakage current and conduction voltage drop variation with temperature relation, the junction temperature of monitor power device that can be real-time.
The above embodiment only have expressed several execution mode of the present invention, and not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (14)
1. a temperature sensing circuit for power device, is characterized in that, comprising:
Temperature detecting unit, is formed in the edge of the active area of power device, and draws the first emitter electrode on this temperature detecting unit;
First grid polar region, is formed on described active area, and first grid electrode is drawn in this first grid polar region, and described temperature detecting unit and described active area share a collector electrode;
Sampling unit, is connected with the collector electrode of described temperature detecting unit and the first emitter electrode, detects conduction voltage drop in the on-state between described collector electrode and the first emitter electrode;
Arithmetic element, is connected with described sampling unit, calculates the junction temperature of described power device according to the variation relation of described conduction voltage drop and temperature.
2. the temperature sensing circuit of power device according to claim 1, is characterized in that, also comprises:
Second gate polar region, is arranged on described temperature detecting unit;
Second grid electrode, is electrical connected with described second gate polar region.
3. the temperature sensing circuit of power device according to claim 1 and 2, is characterized in that, the variation relation of described conduction voltage drop and temperature meets following formula:
Wherein, the junction temperature of power device described in T, V
cefor detected described conduction voltage drop size, V
ce0junction temperature for described power device is T
0time described conduction voltage drop size, T
0for the thermal constant of power device, between 25 DEG C to 100 DEG C, γ is thermal constant.
4. the temperature sensing circuit of power device according to claim 1 and 2, is characterized in that, described sampling unit is also for detecting described collector electrode and described first emitter electrode leakage current in the off case;
Described arithmetic element is also for calculating the junction temperature of described power device according to the variation relation of described leakage current and temperature.
5. the temperature sensing circuit of power device according to claim 4, is characterized in that, the variation relation of described leakage current and temperature meets following formula:
Wherein, the junction temperature of power device described in T, l
cesfor detected described leakage current, l
ces0junction temperature for described power device is T
0time described leakage current, be the thermal constant of power device, between 25 DEG C to 100 DEG C, β is thermal constant.
6. the temperature sensing circuit of power device according to claim 1, is characterized in that, described temperature detecting unit is identical with the structure cell of the active area of described power device.
7. the temperature sensing circuit of the power device according to claim 1 or 6, is characterized in that, the area of described temperature detecting unit is less than 10% of the area of described active area.
8. a temperature checking method for power device, is characterized in that, comprises the following steps:
At the edge formation temperature detecting unit of the active area of power device, and draw the first emitter electrode on this temperature detecting unit;
Formation first grid polar region on described active area, and first grid electrode is drawn on this first grid polar region, wherein, described temperature detecting unit and described active area share a collector electrode;
Detect conduction voltage drop in the on-state between described first emitter electrode and collector electrode;
The junction temperature of described power device is calculated according to the variation relation of described conduction voltage drop and temperature.
9. the temperature checking method of power device according to claim 8, is characterized in that, in the formation first grid polar region on described active area, and also comprises draw the step of first grid electrode on this first grid polar region after:
Described temperature detecting unit is formed second gate polar region, and draw second grid electrode on this second gate polar region.
10. the temperature checking method of power device according to claim 8 or claim 9, it is characterized in that, the variation relation of described conduction voltage drop and temperature meets following formula:
Wherein, the junction temperature of power device described in T, V
cefor detected described conduction voltage drop size, V
ce0junction temperature for described power device is T
0time described conduction voltage drop size, T
0for the thermal constant of power device, between 25 DEG C to 100 DEG C, γ is thermal constant.
The temperature checking method of 11. power devices according to claim 8 or claim 9, it is characterized in that, in described formation first grid polar region on described temperature detecting unit, and further comprising the steps of draw the step of first grid electrode on this first grid polar region after:
Detect described collector electrode and described first emitter electrode leakage current in the off case;
The junction temperature of described power device is calculated according to the variation relation of described leakage current and temperature.
The temperature checking method of 12. power devices according to claim 11, is characterized in that, the variation relation of described leakage current and temperature meets following formula:
Wherein, the junction temperature of power device described in T, l
cesfor detected described leakage current, l
ces0junction temperature for described power device is T
0time described leakage current, T
0for the thermal constant of power device, between 25 DEG C to 100 DEG C, β is thermal constant.
13. 1 kinds of power devices, is characterized in that, comprise the temperature sensing circuit of the power device described in any one of claim 1 to 7.
14. 1 kinds of Intelligent Power Module, is characterized in that, comprise at least one power device according to claim 13.
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