CN104601019B - SPM, power device and its temperature sensing circuit and method - Google Patents
SPM, power device and its temperature sensing circuit and method Download PDFInfo
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Abstract
The invention provides a kind of SPM, power device and its temperature sensing circuit and method, the method includes：Temperature detecting unit is formed at the edge of the active area of power device, and in drawing the first emitter electrode on the temperature detecting unit；Formation first grid polar region on the active area, draws first gate electrode on the first grid polar region, the temperature detecting unit shares a colelctor electrode with the active area；Detect conduction voltage drop in the on-state between first emitter electrode and colelctor electrode；Variation relation according to the conduction voltage drop and temperature calculates the junction temperature of the power device.Temperature detecting unit is integrated in inside power device, using the part active area cellular of power device as temperature detecting unit, the conduction voltage drop of temperature detecting unit under conducting state, using leakage current and conduction voltage drop variation with temperature relation, can in real time monitor the junction temperature of power device.
Description
Technical field
The present invention relates to temperature detection technology, more particularly to a kind of SPM, the temperature detection of power device
Circuit and method.
Background technology
SPM (Intelligent Power Module, IPM) can be in the presence of control signal straight
Stream voltage (electric current) is transformed into amplitude and frequency all variable alternating voltage (electric current), and the alternating voltage of output is loaded into motor
It is upper to drive its operating.Due to having the advantages that integrated level is high and good reliability, SPM is widely applied to change frequency modulation
Speed, in electric propulsion and frequency-conversion domestic electric appliances.Typical IPM modules are by power semiconductor (power device), control and protection electricity
Road constitutes.Power device according to electric current, the difference of voltage class, typically using metal-oxide semiconductor fieldeffect transistor
(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) or igbt
(Insulated Gate Bipolar Transistor, IGBT).Control and defencive function are realized using integrated circuit.By
Power consumption can be all produced in conducting state and the switching instant for turning on and off in power device, therefore its junction temperature will be far above environment
Temperature.By in IPM inside modules integrated temperature detection units, can be with its temperature of monitor in real time, it is ensured that the peace of power device
Full work.
At present, the widely used thermistor of IPM modules detects the temperature of power device.In IPM modules, thermistor
It is commonly mounted on the substrate of heat conduction with power device, because the requirement of electrical design rule has therebetween a certain distance.
After IPM modules work, internal power device can consume certain power and generate heat, its power about several watts to several hectowatts it
Between.According to Fourier heat equation, heat can be delivered on thermistor from power device, detect the change of thermistor resistance
Change can detect the temperature of thermistor, and the temperature of power semiconductor can be obtained by calibration.Thermistor
Non-linear relation is generally between resistance and temperature, needs just be given by computing or to be tabled look-up in the real-time processing of data
Temperature value.Such as patent application：The temprature control method and frequency conversion equipment (application number of a kind of SPM：
Overheating protection circuit and its control method (application number 201310404618.X) and for SPM：
201110147882.0) temperature checking method announced in is all to use thermistor.
In actual applications, the thermal resistance from power device to thermistor can occur with the fluctuation of manufacturing process
Change, in addition, the resistance-temperature characteristics of thermistor can also significantly affect the precision of detection temperature.Therefore this method detection
The precision of temperature and the degree of accuracy are influenceed by SPM internal structure.The conduction of heat is subject to system in transient process
Thermal resistance RthWith thermal capacitance CthInfluence, (be defined as the product of thermal resistance and thermal capacitance, about in the thermal time constant by 3 to 5 times
Tens microseconds are to several milliseconds) Temperature Distribution afterwards in system just tends towards stability.Therefore this method can not detect power
The instantaneous variations injunction temperature of device.
The content of the invention
Based on this, it is necessary to provide a kind of temperature detection of the power device of the instantaneous variations injunction temperature of detectable power device
Circuit.
A kind of temperature sensing circuit of power device, including：
Temperature detecting unit, is formed in the edge of the active area of power device, and in drawing on the temperature detecting unit
One emitter electrode；
First grid polar region, is formed on the active area, and first gate electrode, the temperature inspection are drawn in the first grid polar region
Survey unit and share a colelctor electrode with the active area；
Sampling unit, is connected with the colelctor electrode and the first emitter electrode of the temperature detecting unit, detects the current collection
Conduction voltage drop between pole and the first emitter electrode in the on-state；
Arithmetic element, is connected with the sampling unit, described in the variation relation calculating according to the conduction voltage drop and temperature
The junction temperature of power device.
Additionally, also having carried a kind of temperature checking method of power device, comprise the following steps：
Temperature detecting unit is formed at the edge of the active area of power device, and in drawing first on the temperature detecting unit
Emitter electrode；
Formation first grid polar region on the active area, and first gate electrode is drawn on the first grid polar region, its
In, the temperature detecting unit shares a colelctor electrode with the active area；
Detect conduction voltage drop in the on-state between first emitter electrode and colelctor electrode；
Variation relation according to the conduction voltage drop and temperature calculates the junction temperature of the power device.
Additionally, also carried a kind of power device, including above-mentioned power device temperature sensing circuit.
Additionally, a kind of SPM has also been carried, including at least one above-mentioned power device.
The temperature sensing circuit and method of above-mentioned power device are warm by setting temperature detecting unit on power device
Degree detection unit is integrated in inside power device, using the part active area cellular of power device as temperature detecting unit,
By detecting the conduction voltage drop of temperature detecting unit under conducting state, closed using leakage current and conduction voltage drop variation with temperature
System, can in real time monitor the junction temperature of power device.
Brief description of the drawings
It in one embodiment of the invention is the structure chart of the power device described in Fig. 1 that Fig. 1 (a) is；
Fig. 1 (b) is the corresponding circuit diagram of structure chart of the power device shown in Fig. 1 (a)；
It in another embodiment of the present invention is the structure chart of the power device described in Fig. 1 that Fig. 2 (a) is；
Fig. 2 (b) is the corresponding circuit diagram of structure chart of the power device shown in Fig. 2 (a)；
Fig. 3 is the structure principle chart of the temperature sensing circuit of the power device that Fig. 1 (b) shows；
Fig. 4 is the structure principle chart of the temperature sensing circuit of the power device that Fig. 2 (b) shows；
Fig. 5 gives conduction voltage drop VceWith the curve map changed with junction temperature T；
Fig. 6 gives leakage current lcesWith the curve map changed with junction temperature T.
Specific embodiment
In order that the technical problem to be solved in the present invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Drawings and Examples, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
Conventional power semiconductor, such as MOSFET, IGBT etc., its structure include two parts：(1) positioned at chip edge
Resistance to intermediate pressure section, it is ensured that device can bear certain pressure-resistant when off；(2) it is active positioned at the active region of chip internal
Region is made up of various structure identical cellulars, and when device is operated in conducting state, each cellular flows through necessarily
Electric current.
Fig. 1 (a), Fig. 1 (b), Fig. 2 (a), Fig. 2 (b), Fig. 3 and Fig. 4 are referred to, power device in present pre-ferred embodiments
Temperature sensing circuit include temperature detecting unit 114, first grid polar region 130, sampling unit 20 and arithmetic element 30.
The heating of active area 110 cell region of power device is divided into two parts in the present invention, and a part is led for transmission
Electric current under logical state, that is, main active area 112, another part are examined compared with the secondary active area in the region of small area as temperature
Survey unit 114.And, conventional main power device Q1 is formed based on main active area 112 respectively, with temperature detecting unit 114
Form detection device T1.
It follows that the active area 110 of power device is to include the main active area 112 of main power device Q1, and in the master
The secondary active area (temperature detecting unit 114) of the detection device T1 that the periphery of active area 112 is formed.That is temperature detecting unit 114
The edge of the active area 110 of power device is formed in, and the resistance to nip 120 of main power device Q1 is then set positioned at temperature detection list
The periphery of unit 114.In addition, drawing the first emitter electrode E1 on the temperature detecting unit 114, draw on main active area 112
Go out the second emitter electrode E2.First emitter electrode E1 as the temperature detection signal of temperature detecting unit 114 output electrode.
Grid set-up mode on power device has two kinds of implementation methods, respectively：
The first：Fig. 1 (a) and Fig. 1 (b) is referred to, first grid polar region 130, first grid are formed with active area 110
First gate electrode G1 is drawn in area 130, and first gate electrode G1 is main power device Q1 and the coordination electrode of detection device T1, i.e.,
Owner's power device Q1 and detection device T1 common gates, are operated in identical working condition.
Second：The first：Fig. 2 (a) and Fig. 2 (b) is referred to, first grid polar region is being formed with active area 110
130, first grid polar region 130 is drawn on the basis of first gate electrode G1.Also second grid is formed on temperature detecting unit 114
Area 140, and the second grid electrode G2 that setting is electrical connected with it on the second gate polar region 140.In the present embodiment, the first grid
Pole electrode G1 as main power device Q1 coordination electrode, second grid electrode G2 uses as the coordination electrode of detection device T1
Level is controlled with the opening and closing of control detector part T1 in connecing.
In addition, the temperature detecting unit 114 shares same colelctor electrode C with the main active area 112 of main power device Q1, collect
Electrode C is located at the back side of chip.
Fig. 3 and Fig. 4 is referred to, sampling unit 20 is sent out with the colelctor electrode C and first of temperature detecting unit (detection device T1)
Emitter-base bandgap grading electrode E1 is connected, the conduction voltage drop V between detection colelctor electrode C and the first emitter electrode E1 in the on-statece。
Arithmetic element 30 is connected with sampling unit 20, according to conduction voltage drop VceVariation relation with temperature T calculates power device
The junction temperature T of part (above-mentioned power device or main power device Q1).The last temperature T-phase exported with amplifying circuit with power device
Answer the magnitude of voltage V_sense1 values output of (direct ratio).
In more detail, when temperature detecting unit 114 is in the conduction state.With reference to Fig. 3 and Fig. 4, in three-phase inverting circuit
In, in a certain sampling instant, can in real time reconstruct the electric current of U, V, W three-phase by the voltage on sampling resistor R, and then can be with
Determine the electric current that bridge arm or lower bridge arm power device flow through in a certain phase of sampling instant.And in the present embodiment, temperature detecting unit
114 can be operated under a specific electric current.Between the colelctor electrode C of temperature detecting unit 114 and the first emitter electrode E1
Voltage can be obtained by sampling hold circuit.Conduction voltage drop V between colelctor electrode C and the first emitter electrode E1ceAnd temperature
It is that linear relationship meets following formula between degree T：
Wherein, T is the junction temperature of the power device, VceIt is the conduction voltage drop size for being detected, Vce0It is the knot of power device
Temperature is T0When conduction voltage drop size, T0It is the thermal constant of power device, between 25 DEG C to 100 DEG C, γ is thermal constant.
Fig. 5 gives conduction voltage drop VceWith the relation curve of temperature T.
In this way, junction temperature that can be in real time to all of power device is monitored, and can avoid mesh
Preceding use thermistor detects the shortcoming of power device junction temperature.
In one embodiment, the area of temperature detecting unit 114 is less than the 10% of the area of active area 110.Temperature
The upper limit that detection unit 114 will at least have the area of several cellulars, area is mainly considered by practicality and cost.It is empty with frequency conversion
As a example by IPM modules on tune, the area of temperature detecting unit 114 is the 10% of the area of power device active area 110, minimum to the maximum
Area is the 0.0001% of the area of active area 110.In typical case, the area of temperature detecting unit 114 is that power device is active
Between 0.1% to the 2% of the area of area 110.As a example by IGBT with rated current as 15A, if temperature detecting unit 114 takes 1%
Area, the grade of its rated current is 0.15A, and the influence to systematic function and cost can be ignored.
Compared with conventional power device, power device proposed by the present invention increased one or two electrodes, detect device
The first emitter electrode E1 of (such as IGBT) T1 and with first gate electrode G1.By taking Fig. 2 (a) as an example, the of main power device Q1
The second grid electrode G2 of one gate electrode G1 and detection device T1 has identical current potential within the temperature detection cycle, in non-temperature
Degree detection cycle, the grid G 2 of main power device Q1 connects control signal, and the second grid electrode G2 of detection device T1 can connect control
Signal processed or high level (conducting state) can.
(allusion quotation when the first gate electrode G1 of the second grid electrode G2 and main power device Q1 of detection device T1 is high level
Offset is 15V), temperature detecting unit 114 is operated in voltage detection mode.By detecting conduction voltage drop VceProvide main power device
Junction temperature T.With the rising of temperature, conduction voltage drop VceLinear increase, as shown in Figure 3.
In circuit shown in Fig. 3 and Fig. 4, P and N is respectively the anode and negative terminal of dc bus.R is current sampling resistor.
U, V and W are the output end of three-phase alternating voltage.Q1, Q2, Q3, Q4, Q5, Q6 are the main power device in three-phase inverting circuit, can
Think IGBT or MOSFET, and reverse parallel connection fast recovery diode.In addition, being integrated with detection in main power device Q1
Device T1.The colelctor electrode of detection device T1 and diode DR1 connections are used as isolation.
In Fig. 3, when main power device Q1 and the coordination electrode (first gate electrode G1) of detection device T1, input high level
When；In Fig. 4, when the second grid electrode G2 input high levels of device T1 are detected；Now detect first emitter stage of device T1
Voltage difference between electrode E1 pins and diode DR1 positive pole pins is conduction voltage drop Vce, conduction voltage drop VceSize and temperature
T is linear for degree, and its size is between 0.5 volt to 2.5 volts.By follow-up amplifying circuit (being located at arithmetic element 30)
Afterwards, the junction temperature that the voltage signal V_sense1 signal being directly proportional to junction temperature T can be used to present power device is obtained big
It is small.
In another embodiment, sampling unit 20 is additionally operable to the colelctor electrode C of detection detection device T1 with described the
One emitter electrode E1 leakage current l in the off caseces；Arithmetic element 30 is additionally operable to according to the leakage current and temperature
Variation relation calculates the junction temperature of the power device.Specifically, the leakage current l under off statecesIt is temperature detecting unit 114
Colelctor electrode C and the first emitter electrode E1 between electric current.Arithmetic element 30 is last with amplifying circuit output and power device
Temperature T-phase answer (direct ratio) magnitude of voltage V_sense1.
In more detail, when temperature detecting unit 114 is off state.The colelctor electrode C of temperature detecting unit 114 and
Reverse bias is subject between one emitter electrode E1.Electric current between colelctor electrode C and the first emitter electrode E1 is mainly instead
The leakage current l of inclined PNP transistorces.With the rising of temperature, the leakage current l between colelctor electrode C and the first emitter electrode E1ces
Exponentially increase, variation relation meets following formula：
Wherein, T is the junction temperature of detected power device, lcesIt is the leakage current for being detected, lces0It is tested
The power device of survey is T in junction temperature0When leakage current, T0Be the thermal constant of power device, 25 DEG C to 100 DEG C it
Between, β is thermal constant.Fig. 6 gives lcesWith the relation curve of temperature T.
In a further embodiment, first to leakage current lcesSampled, and changed into voltage signal.Voltage signal
By after logarithmic operational circuit treatment, meeting following formula：
vces=lces*r (3)
vces0=lces0*r (4)
lces=lces0*exp(β*(T-T0) (5)
V_sense1=ln (vces) (6)
V_sense1_0=ln (vces0) (7)
Wherein, r is the partial pressure resistance of the magnitude of voltage of leakage current conversion, vcesFor the electricity that the leakage current for being detected is changed
Pressure value, vces0For the junction temperature of the power device being detected is T0When leakage current conversion magnitude of voltage.It is last to be exported with amplifying circuit
The magnitude of voltage V_sense1 being directly proportional with the temperature T of power device.
In this way, junction temperature that can be in real time to all of power device is monitored, and can avoid mesh
Preceding use thermistor detects the shortcoming of power device junction temperature.
In the present embodiment, the first gate electrode G1 of main power device Q1 connects control signal, the second gate of detection device T1
Pole electrode G2 can connect control signal or low level (off state) can.
The first gate electrode G1 of the second grid electrode G2 and main power device Q1 of detection device T1 is low level (typical case
Voltage be 0V) when, temperature detecting unit 114 is operated in amperometric detection mode.By detecting leakage current lcesProvide power device
Junction temperature T.With the rising of temperature, leakage current lcesIndex increases, as shown in Figure 6.
In Fig. 3, when main power device Q1 and the coordination electrode (first gate electrode G1) of detection device T1, input low level
When；In Fig. 4, when the second grid electrode G2 input low levels of device T1 are detected, the now anode P and negative terminal N of dc bus
Between DC voltage be added on main power device Q1 and detection device T1, output electrode (first emitter stage of detection device T1
Electrode) the leakage current l that varies with temperature of E1 pins outputces, leakage current lcesSize and temperature, the overcurrent of output electrode E1
Cross-sectional area is relevant with the technique of power device, and its size changes in several nas between hundreds of microamperes.By sampling unit 20
Sampling and holding circuit obtain a voltage signal.Can then be realized using traditional switched-capacitor circuit electric current sampling and
Keep.In the sampling period of signal, electric current charges to electric capacity；In subsequent hold period, signal is exaggerated treatment.By follow-up
Logarithmic operational circuit after, obtain a voltage signal V_sense1 being directly proportional to temperature, the signal can be used to that work(is presented
The junction temperature size of rate device.
Similar, by adding temperature detecting unit 114 in power device Q2, Q3, Q4, Q5, Q6, it is also possible in real time
Monitor its junction temperature.This method is applicable not only for three-phase inverting circuit, the module containing power device similar for other
Or circuit is equally applicable.
Additionally, in one embodiment, additionally providing a kind of temperature checking method of power device, comprise the following steps：
Step one, temperature detecting unit is formed at the edge of the active area of power device, and on the temperature detecting unit
Draw the first emitter electrode；
Step 2, the formation first grid polar region on the active area, and draw first grid on the first grid polar region
Electrode, wherein, the temperature detecting unit shares a colelctor electrode with the active area；
Step 3, detects conduction voltage drop in the on-state between first emitter electrode and colelctor electrode；
Step 4, the variation relation according to the conduction voltage drop and temperature calculates the junction temperature of the power device.
In another embodiment, second gate polar region is formed also on the temperature detecting unit, and in the second grid
The step of second grid electrode being drawn in area.
Specifically, the conduction voltage drop meets following formula with the variation relation of temperature：
Wherein, T is the junction temperature of the power device, VceIt is the conduction voltage drop size for being detected, Vce0It is the power
The junction temperature of device is T0When the conduction voltage drop size, T0It is the thermal constant of power device, between 25 DEG C to 100 DEG C, γ
It is thermal constant.
Further, the temperature detecting unit is identical with the structure cell of the active area of the power device.
Further, the area of the temperature detecting unit is less than the 10% of the area of the active area.
In another embodiment, the temperature checking method of another power device is additionally provided, it is further comprising the steps of：
Step 5, detects leakage current of the colelctor electrode with first emitter electrode in the off case；
Step 6, the variation relation according to the leakage current and temperature calculates the junction temperature of the power device.
Further, leakage current is first converted into voltage signal, calculates the temperature of power device.
Further, the leakage current meets following formula with the variation relation of temperature：
Wherein, T is the junction temperature of the power device, lcesIt is the leakage current for being detected, lces0It is the power
The junction temperature of device is T0When the leakage current, T0It is the thermal constant of power device, between 25 DEG C to 100 DEG C, β is
Thermal constant.
Additionally, a kind of power device is additionally provided, its temperature sensing circuit for including above-mentioned power device.
Additionally, a kind of SPM is additionally provided, including power device described at least one.
In this way, being provided with the temperature sensing circuit of above-mentioned power device, power device or intelligence are detected using the above method
The junction temperature of energy power model, can be by setting temperature detecting unit on power device, and temperature detecting unit is integrated in work(
Rate device inside, using the part active area cellular of power device as temperature detecting unit, by detecting temperature under off state
The conduction voltage drop of temperature detecting unit under the leakage current and conducting state of degree detection unit, using leakage current and conduction voltage drop with temperature
The variation relation of degree, can in real time monitor the junction temperature of power device.
Embodiment described above only expresses several embodiments of the invention, is not intended to limit the invention, all at this
Any modification, equivalent and improvement made within the spirit and principle of invention etc., should be included in protection model of the invention
Within enclosing.
Claims (14)
1. a kind of temperature sensing circuit of power device, it is characterised in that including：
Temperature detecting unit, is formed in the edge of the active area of power device, and send out in drawing first on the temperature detecting unit
Emitter-base bandgap grading electrode；
First grid polar region, is formed on the active area, and first gate electrode, the temperature detection list are drawn in the first grid polar region
It is first to share a colelctor electrode with the active area；
Sampling unit, is connected with the colelctor electrode and the first emitter electrode of the temperature detecting unit, detect the colelctor electrode with
Conduction voltage drop between first emitter electrode in the on-state；
Arithmetic element, is connected with the sampling unit, and the variation relation according to the conduction voltage drop and temperature calculates the power
The junction temperature of device.
2. the temperature sensing circuit of power device according to claim 1, it is characterised in that also include：
Second gate polar region, is arranged on the temperature detecting unit；
Second grid electrode, is electrical connected with the second gate polar region.
3. the temperature sensing circuit of power device according to claim 1 and 2, it is characterised in that the conduction voltage drop with
The variation relation of temperature meets following formula：
Wherein, T is the junction temperature of the power device, VceIt is the conduction voltage drop size for being detected, Vce0It is the power device
Junction temperature be T0When the conduction voltage drop size, T0It is the thermal constant of power device, between 25 DEG C to 100 DEG C, γ is temperature
Degree constant.
4. the temperature sensing circuit of power device according to claim 1 and 2, it is characterised in that the sampling unit is also
For detecting colelctor electrode leakage current with first emitter electrode in the off case；
The arithmetic element is additionally operable to be calculated according to the variation relation of the leakage current and temperature the junction temperature of the power device.
5. the temperature sensing circuit of power device according to claim 4, it is characterised in that the leakage current and temperature
Variation relation meets following formula：
Wherein, T is the junction temperature of the power device, lcesIt is the leakage current for being detected, lces0It is the power device
Junction temperature be T0When the leakage current, T0It is the thermal constant of power device, between 25 DEG C to 100 DEG C, β is temperature
Constant.
6. the temperature sensing circuit of power device according to claim 1, it is characterised in that the temperature detecting unit and
The structure cell of the active area of the power device is identical.
7. the temperature sensing circuit of the power device according to claim 1 or 6, it is characterised in that the temperature detection list
The area of unit is less than the 10% of the area of the active area.
8. a kind of temperature checking method of power device, it is characterised in that comprise the following steps：
Temperature detecting unit is formed at the edge of the active area of power device, and is launched in drawing first on the temperature detecting unit
Pole electrode；
Formation first grid polar region on the active area, and first gate electrode is drawn on the first grid polar region, wherein, institute
State temperature detecting unit and share a colelctor electrode with the active area；
Detect conduction voltage drop in the on-state between first emitter electrode and colelctor electrode；
Variation relation according to the conduction voltage drop and temperature calculates the junction temperature of the power device.
9. the temperature checking method of power device according to claim 8, it is characterised in that on the active area
Also include after the step of forming first grid polar region, and draw first gate electrode on the first grid polar region：
Second gate polar region is formed on the temperature detecting unit, and second grid electrode is drawn on the second gate polar region.
10. the temperature checking method of power device according to claim 8 or claim 9, it is characterised in that the conduction voltage drop with
The variation relation of temperature meets following formula：
Wherein, T is the junction temperature of the power device, VceIt is the conduction voltage drop size for being detected, Vce0It is the power device
Junction temperature be T0When the conduction voltage drop size, T0It is the thermal constant of power device, between 25 DEG C to 100 DEG C, γ is temperature
Degree constant.
The temperature checking method of 11. power device according to claim 8 or claim 9, it is characterised in that in described in the temperature
Formation first grid polar region in degree detection unit, and the step of first gate electrode is drawn on the first grid polar region after also wrap
Include following steps：
Detect colelctor electrode leakage current with first emitter electrode in the off case；
Variation relation according to the leakage current and temperature calculates the junction temperature of the power device.
The temperature checking method of 12. power devices according to claim 11, it is characterised in that the leakage current and temperature
Variation relation meet following formula：
Wherein, T is the junction temperature of the power device, lcesIt is the leakage current for being detected, lces0It is the power device
Junction temperature be T0When the leakage current, T0It is the thermal constant of power device, between 25 DEG C to 100 DEG C, β is temperature
Constant.
A kind of 13. power devices, it is characterised in that the temperature detection including the power device described in any one of claim 1 to 7
Circuit.
14. a kind of SPMs, it is characterised in that including the power device described at least one claim 13.
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| CN110632489B (en) * | 2019-09-03 | 2021-04-20 | 清华大学 | Leakage current-based IGBT junction temperature monitoring circuit and method |
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