CN112946450A - Power semiconductor device convenient for junction temperature detection and junction temperature measuring method thereof - Google Patents
Power semiconductor device convenient for junction temperature detection and junction temperature measuring method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
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Abstract
A power semiconductor device and its junction temperature detection method convenient to the junction temperature detects, the said power semiconductor device is IGBT device or MOSFET device, the said semiconductor device includes at least two unit cells, wherein at least one unit cell is the junction temperature monitoring unit, other unit cells are totally the same with IGBT device or MOSFET device structure; the junction temperature monitoring unit is structurally different from an IGBT device or an MOSFET device in that an anode is metalized on the surface of a P + contact area, and a cathode is metalized on the surface of an N + source area. The junction temperature monitoring unit is directly manufactured and integrated in the power semiconductor chip, so that the junction temperature value of the power semiconductor device can be directly measured in real time, and the real-time accurate value can be obtained.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to a power semiconductor device convenient for junction temperature detection and a junction temperature measuring method thereof.
Background
The power Semiconductor device is a key device for realizing electric energy conversion and control, mainly comprises an Insulated Gate Bipolar Transistor (IGBT), a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) and the like, and is widely applied to the fields of high-voltage direct-current transmission, high-speed railway locomotives, smart grids, frequency converters and the like. In operation, the power semiconductor device is turned on and off according to a control command sent by a control system, and a large amount of heat is generated in the switching process of the power semiconductor device, so that junction temperature is increased. When the junction temperature rises above a certain limit without effective cooling measures, irreversible damage to the power semiconductor devices can occur. At present, the junction temperature control of the power semiconductor device mainly adopts an external cooling system.
In practical applications, the cooling system adopted by the power semiconductor device mainly comprises: the cooling system has the defects of large volume, low heat dissipation efficiency, high cost and the like. In addition, the junction temperature monitoring of the conventional power semiconductor device usually adopts indirect measurement modes such as calculation of the temperature of inlet and outlet water of a measurement cooling system, infrared thermal imaging, measurement calculation of the temperature outside a device packaging shell and the like, the junction temperature of the power semiconductor device measured by the indirect measurement modes has low accuracy and poor real-time performance, and cannot be controlled and protected in time when the junction temperature of the power semiconductor device is too high, so that the system operation efficiency is low, the device can be damaged, and the system operation and maintenance cost is increased.
Disclosure of Invention
The invention provides a power semiconductor device convenient for junction temperature detection and a junction temperature measuring method thereof, aiming at the problems in the prior art. The junction temperature monitoring unit has a simple structure, is easy to manufacture, and has high accuracy and excellent real-time property of directly measuring the obtained junction temperature value.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
the invention provides a power semiconductor device convenient for junction temperature detection, which is an IGBT device or an MOSFET device and comprises at least two unit cells, wherein at least one unit cell is a junction temperature monitoring unit, and the structures of other unit cells are completely the same as those of the IGBT device or the MOSFET device; the junction temperature monitoring unit is structurally different from an IGBT device or an MOSFET device in that an anode is metalized on the surface of a P + contact area, and a cathode is metalized on the surface of an N + source area.
In the case of a MOSFET device, the junction temperature monitoring unit may also be metallized on the back side of the N buffer layer to form a cathode.
The IGBT or MOSFET power semiconductor device is made of silicon material, silicon carbide material or gallium nitride material.
A junction temperature detection method of a power semiconductor device convenient for junction temperature detection is characterized in that a connecting voltmeter is arranged between an anode and a cathode of a junction temperature detection unit, forward current is applied between the anode and the cathode to carry out junction temperature monitoring, and a junction temperature calculation formula is as follows:
Tj＝T0+(VF0-VF)/VS
wherein, VFForward voltage drop measurement, V, of parasitic bipolar semiconductor device during operation of power semiconductor device for voltmeter measurementF0Initial value of forward voltage drop, T, of parasitic bipolar semiconductor device of power semiconductor device measured for voltmeterjFor measuring junction temperature T during operation of power semiconductor device0Is an initial value of the pre-operation temperature, V, of the power semiconductor deviceSThe forward voltage drop of the parasitic bipolar semiconductor device decreases by a value per unit value of junction temperature rise.
Because the forward voltage drop of the parasitic bipolar semiconductor device in the junction temperature monitoring unit is reduced along with the rise of the ambient temperature, the junction temperature value of the power semiconductor device can be obtained by measuring the forward voltage drop of the parasitic bipolar semiconductor device, and the specific change relationship is as follows:
VF＝VF0-(Tj-T0)·VS
therefore, the real-time junction temperature T in the working process of the power semiconductor device can be obtainedjComprises the following steps:
Tj＝T0+(VF0-VF)/VS
the power semiconductor structure inevitably contains a parasitic diode, and the parasitic effect needs to be avoided in the using process of the device under the conventional condition, but the parasitic diode is effectively used in the invention, and the effective method for monitoring the junction temperature is realized by considering that the parasitic diode follows the rule that the forward voltage drop is reduced along with the rise of the ambient temperature. On the basis, a new junction temperature monitoring structure does not need to be reconstructed, the power devices do not need to be isolated from the detection structure, only one single cell close to the highest temperature position of the chip is selected from a plurality of groups of power devices connected in parallel, and the cathode and the anode of the parasitic diode are led out through the reasonable design of metallization procedures, so that the junction temperature can be detected. In general, in a power semiconductor device with multiple parallel unit cells, the temperature is highest in the central region, so one unit cell in the central region of the chip is generally selected as a junction temperature monitoring unit.
The power semiconductor device and the junction temperature measuring method thereof convenient for junction temperature detection have the following advantages:
(1) the junction temperature monitoring unit is directly manufactured and integrated in the power semiconductor chip, so that the junction temperature value of the power semiconductor device can be directly measured in real time, and the real-time accurate value can be obtained.
(2) The junction temperature monitoring unit is compatible with the manufacturing process of the power semiconductor device, and only needs to reasonably design a layout in a metallization process and lead out the potentials of the cathode and the anode of a parasitic diode of the power semiconductor device. The real-time junction temperature measurement can be realized without increasing the number of layouts, process steps and cost.
(3) The junction temperature value of the power semiconductor device is obtained by measuring the forward voltage drop of the parasitic bipolar semiconductor device, the method is simple, and the calculation result is accurate.
(4) On the basis of obtaining the real-time accurate numerical value of the junction temperature of the power semiconductor device through measurement, a device control system and a cooling system can be optimized, the heat dissipation efficiency of the device cooling system is improved, and the cost of the cooling system is reduced.
Drawings
Fig. 1, a conventional classical vertical MOSFET structure.
Fig. 2, is a junction temperature monitoring unit adapted for use with a MOSFET.
Fig. 3, a conventional classical IGBT structure diagram.
Fig. 4 is a schematic diagram of a junction temperature monitoring unit adapted to be used with an IGBT.
Fig. 5 is a schematic diagram of a junction temperature measuring circuit of the junction temperature monitoring unit.
FIG. 6 is a schematic diagram of a structure of a cathode formed by back side metallization of an N buffer region of a MOSFET device.
Fig. 7, the internal structure of the semiconductor device is completed by a conventional process.
Fig. 8, a layer of metal is deposited on the surface.
Fig. 9 shows that metal etching is performed to fabricate an extraction electrode of the power semiconductor and an extraction electrode of the junction temperature monitoring unit.
Fig. 10 is a schematic diagram of a power semiconductor device junction temperature measurement circuit for facilitating junction temperature detection.
Detailed Description
It is specifically intended that the following description be regarded as illustrative in nature and not as restrictive, with respect to the application and uses of the invention. Unless specifically stated otherwise, the relative arrangement of the components and steps and the numerical expressions and numerical values set forth in the embodiments do not limit the scope of the present invention. Additionally, techniques, methods, and apparatus known to those skilled in the art may not be discussed in detail, but are included as part of the specification where appropriate.
A power semiconductor device convenient for junction temperature detection is provided, wherein the power semiconductor device is an IGBT device or an MOSFET device and comprises at least two unit cells, wherein at least one unit cell is a junction temperature monitoring unit, and the other unit cells have the same structure as the IGBT device or the MOSFET device; the junction temperature monitoring unit is different from an IGBT device or a MOSFET device in that an anode is formed on the surface of a P + contact area through metallization, and a cathode is formed on the surface of an N + source area through metallization.
The following description will be made with respect to the structures of an IGBT power semiconductor device and a MOSFET power semiconductor device, respectively.
Example one
Fig. 1 shows a conventional classical vertical MOSFET structure, which includes, from bottom to top, a drain 10, an N buffer layer, an N drift region, a Pbody region, a P + contact region, an N + source region, a gate electrode 11, and a source 12. In this figure, a schematic diagram of the parasitic diodes in the device is drawn for better understanding. The MOSFET power semiconductor device structure of fig. 1 is taken as an example for explanation.
The method comprises the following steps of manufacturing two unit cell units of the MOSFET power semiconductor device which are connected in parallel on a chip by using a conventional method in a silicon material, wherein a surface metallization process is not included; one unit cell unit is selected as a junction temperature monitoring unit; the other unit cell is used as a MOSFET unit cell of the power semiconductor device which can realize the function of the MOSFET;
on the unit cell unit selected as the junction temperature monitoring unit, referring to fig. 2, surface metallization is respectively performed on a P + contact area and an N + source area, a conductive anode 20 is formed on the surface of the P + contact area, a conductive cathode 21 is formed on the surface of the N + source area, and the anode 20 and the cathode 21 are used as extraction electrodes of the junction temperature monitoring unit; the other unit cell unit serving as the power semiconductor device for realizing the MOSFET function continues to complete the conventional MOSFET power semiconductor device manufacturing process to form a unit cell unit capable of realizing the MOSFET function, as shown in fig. 1.
Referring to fig. 5, a forward current of 10 μ a is applied between the anode 20 and the cathode 21 of the junction temperature monitoring unit through a current source 50 while measuring a forward voltage drop of a parasitic diode in the semiconductor device using a voltmeter 60, and the junction temperature of the semiconductor device is measured through a relation between the forward voltage drop of the parasitic diode and the junction temperature;
the formula:
Tj＝T0+(VF0-VF)/VS
in the formula, VFIs a forward voltage drop measurement value V of a parasitic bipolar semiconductor device in the working process of the power semiconductor deviceF0Is an initial value of forward voltage drop, T, of the parasitic bipolar semiconductor device of the power semiconductor devicejFor measuring junction temperature T during operation of power semiconductor device0Is the initial value of junction temperature, V, of the power semiconductor deviceSThe forward voltage drop of the parasitic bipolar semiconductor device decreases by a value per unit value of junction temperature rise.
Wherein, VSFor measuring a group of parasitic diodes in advance with temperature VFFrom which the slope is obtained, the value of the slope being VS. Before the semiconductor device is operated, V is obtained by measurementF0And T0Wherein T is0Is the initial temperature of the semiconductor device before operation.
The junction temperature of a metal-oxide semiconductor field effect transistor (MOSFET) power semiconductor device manufactured by using silicon materials is calculated through a formula.
In embodiment 1, the fabricated MOSFET power semiconductor device includes two unit cells, one of which is responsible for monitoring the junction temperature of the MOSFET power semiconductor device, and the other of which is responsible for monitoring the junction temperature of the MOSFET power semiconductor device.
In practical application, the MOSFET power semiconductor device may include more than two unit cells, and it only needs to satisfy that one unit cell serves as a junction temperature monitoring unit to undertake the junction temperature monitoring function, and the other unit cells all undertake the MOSFET power semiconductor device function. When a plurality of unit cells exist, the unit cells as the junction temperature monitoring units are preferably located in the central region of the arrangement of all unit cells, so that the junction temperature measured can be more accurate.
A forward current of 20 or 40 μ a current value may also be applied by current source 50. But it is necessary to ensure the measurement VSValue of forward current applied and measurement VFThe forward current value applied is the same.
Example two
Fig. 3 shows a conventional classical vertical IGBT structure, which includes a collector 30, a P + collector region, an N buffer layer, an N drift region, a Pbody region, a P + contact region, an N + source region, a gate electrode 31, and an emitter 32 from bottom to top. The structure of the IGBT power semiconductor device of fig. 3 is taken as an example for explanation.
The method comprises the following steps of manufacturing unit cell units of two IGBT power semiconductor devices on a chip by using a conventional method in a silicon material, wherein a surface metallization process is not included; one unit cell unit is selected as a junction temperature monitoring unit, and the other unit cell unit is used as a unit cell unit of a power semiconductor device capable of realizing the IGBT function;
on the unit cell unit selected as the junction temperature monitoring unit, referring to fig. 4, surface metallization is performed on the P + contact area and the N + source area respectively, a conductive anode 40 is formed on the surface of the P + contact area, a conductive cathode 41 is formed on the surface of the N + source area, and the anode 40 and the cathode 41 are used as extraction electrodes of the junction temperature monitoring unit; and the other unit cell unit serving as the power semiconductor device for realizing the IGBT function continues to complete the conventional manufacturing process of the IGBT power semiconductor device to form the unit cell unit capable of realizing the IGBT function, and the reference is made to fig. 3.
The junction temperature monitoring method is exactly the same as that in example 1, and the description thereof will not be repeated.
The manufactured IGBT power semiconductor device comprises two unit cells, wherein one unit cell plays a role in monitoring junction temperature of the IGBT power semiconductor device, and the other unit cell plays a role in monitoring junction temperature of the IGBT power semiconductor device.
In practical application, the IGBT power semiconductor device may include more than two unit cells, and it is only necessary to satisfy that one unit cell serves as the junction temperature monitoring unit to undertake the junction temperature monitoring function, and the other unit cells all undertake the IGBT power semiconductor device function. When a plurality of unit cells exist, the unit cells as the junction temperature monitoring units are preferably located in the central region of the arrangement of all unit cells, so that the junction temperature measured can be more accurate.
EXAMPLE III
Since there are many places of the parasitic diode in the power semiconductor device, the cathode may not be limited to be provided on the surface of the N + source region.
In the case of a MOSFET power semiconductor device, the cathode terminal of the parasitic diode may be disposed in the N buffer, and referring to fig. 6, the drain electrode metalized on the back surface of the N buffer may be used as the cathode 71, and the anode electrode 70 metalized on the surface of the P + contact region may be used as the terminal of the parasitic diode, and the junction temperature is monitored in real time by the junction temperature detection method in embodiment 1.
The structure is only suitable for the MOSFET power semiconductor device, and the back of the N buffer area of the IGBT power semiconductor device is a P + collector area, so that the IGBT power semiconductor device is not suitable for use.
Example 4
The method is a simple process step of the power semiconductor device:
firstly, according to a standard power semiconductor power device preparation flow process, at least two groups of MOSFET unit cells connected in parallel are prepared, and a gate oxide layer 80 is formed on each MOSFET unit cell, as shown in figure 7;
depositing a layer of metal 81 on the surface of the prepared unit cell chip, as shown in FIG. 8;
the metal layer 81 is etched to extract the electrodes of each cell. Selecting one single cell closest to the central area of the chip as a chip junction temperature monitoring unit, etching the metal layer 81 on the single cell, and forming an anode 82 and a cathode 83 in a P + contact area and an N + source area respectively; a gate electrode 84 and a source electrode 85 are formed on a unit cell unit realizing the function of the power semiconductor device through etching, as shown in fig. 9, and the accurate junction temperature of the device is obtained by detecting the voltage drop of a parasitic diode through an anode and a cathode arranged in a P + contact area and an N + source area.
Referring to fig. 10, the power semiconductor device a (shown by a dotted line) for facilitating junction temperature detection finally formed by the present invention includes a power semiconductor device B for implementing the function of the power semiconductor device and a junction temperature monitoring unit C for monitoring the junction temperature of the power semiconductor device, which is connected in parallel with the power semiconductor device B. The power semiconductor device B is connected with an external circuit to realize the function of the semiconductor device, the cathode and the anode are connected by the junction temperature monitoring unit, forward current is provided for the power semiconductor device B through the current source 90, and the real-time forward voltage drop of a parasitic diode in the semiconductor device is measured through the voltmeter 91 so as to convert the real-time junction temperature of the semiconductor device.
According to the power semiconductor device, one unit cell unit in the sacrificial chip is used as the junction temperature monitoring unit, so that the junction temperature of the semiconductor device can be monitored in real time, and a junction temperature detection method is simplified; because the manufacturing process flow of the junction temperature monitoring unit is basically the same as that of other unit cell units of the power semiconductor device, the manufacturing of the junction temperature monitoring unit can be completed only by designing the metallization layout, the manufacturing cost and the monitoring cost of junction temperature monitoring are reduced, and the accuracy of the junction temperature monitoring is improved.
The material of the IGBT or MOSFET power semiconductor device is a silicon material, a silicon carbide material or a gallium nitride material.
Claims (4)
1. A power semiconductor device convenient for junction temperature detection is characterized in that the power semiconductor device is an IGBT device or an MOSFET device and comprises at least two unit cells, wherein at least one unit cell is a junction temperature monitoring unit, and the structures of other unit cells are completely the same as those of the IGBT device or the MOSFET device; the junction temperature monitoring unit is structurally different from an IGBT device or an MOSFET device in that an anode is metalized on the surface of a P + contact area, and a cathode is metalized on the surface of an N + source area.
2. The power semiconductor device for facilitating junction temperature detection as claimed in claim 1, wherein the junction temperature monitoring unit is also metalized on the back side of the N buffer layer to form a cathode in case of a MOSFET device.
3. A power semiconductor device to facilitate junction temperature detection as claimed in claim 1, wherein the material of the IGBT or MOSFET power semiconductor device is a silicon material, a silicon carbide material or a gallium nitride material.
4. A method as claimed in any one of claims 1 to 3, wherein a junction temperature meter is provided between an anode and a cathode of the junction temperature detecting unit, and a forward current is applied between the anode and the cathode to monitor junction temperature, and a junction temperature calculation formula is:
Tj＝T0+(VF0-VF)/VS
wherein, VFSignal for voltmeter measurement in power semiconductor device working processGenerating a forward voltage drop measurement, V, of a bipolar semiconductor deviceF0Initial value of forward voltage drop, T, of parasitic bipolar semiconductor device of power semiconductor device measured for voltmeterjFor measuring junction temperature T during operation of power semiconductor device0Is an initial value of the pre-operation temperature, V, of the power semiconductor deviceSThe forward voltage drop of the parasitic bipolar semiconductor device decreases by a value per unit value of junction temperature rise.
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