CN103472346A - Test device - Google Patents
Test device Download PDFInfo
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- CN103472346A CN103472346A CN 201210185984 CN201210185984A CN103472346A CN 103472346 A CN103472346 A CN 103472346A CN 201210185984 CN201210185984 CN 201210185984 CN 201210185984 A CN201210185984 A CN 201210185984A CN 103472346 A CN103472346 A CN 103472346A
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- contact element
- oxide
- semiconductor
- pin
- signal
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- Measuring Leads Or Probes (AREA)
- Thin Film Transistor (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
A test device is used for testing whether insufficient welding and false welding exist on an MOS tube welded to a circuit board. The test device comprises a control unit, a display unit, a switch and first to fourth contact elements. During testing, the first and second contact elements contact the drain of the MOS tube, the third contact element contacts the gate of the MOS tube, the fourth contact element contacts the source of the MOS tube, the switch is closed, a pin of the control unit outputs a control signal to the gate of the MOS tube, the display unit displays that insufficient welding and false welding exist on the MOS tube if a signal receiving pin of the control unit receives a high level signal, and the display unit displays that insufficient welding and false welding do not exist on the MOS tube if the signal receiving pin of the control unit receives a low level signal. The test device has the advantages of accurate test result and low test cost.
Description
Technical field
The present invention relates to a kind of proving installation, particularly a kind of metal-oxide-semiconductor of testing DirectEFT encapsulation proving installation of rosin joint and dry joint whether.
Background technology
Advantages such as the metal-oxide-semiconductor of DirectEFT encapsulation is little because having impedance, rapid heat dissipation and being widely used.But because the pin of grid, drain electrode and the source electrode of the metal-oxide-semiconductor of DirectEFT encapsulation is little and all be positioned at the bottom surface of metal-oxide-semiconductor, therefore, when the metal-oxide-semiconductor of DirectEFT encapsulation is welded on circuit board, be prone to rosin joint and dry joint.Whether the metal-oxide-semiconductor of the DirectEFT encapsulation that at present, industry adopts X-ray equipment to detect to be welded on circuit board rosin joint and dry joint occur.Yet X-ray equipment is expensive, thereby make testing cost higher.
Summary of the invention
In view of foregoing, be necessary to provide the low and metal-oxide-semiconductor that can detect exactly the DirectEFT encapsulation of a kind of cost rosin joint and dry joint proving installation whether to occur.
A kind of proving installation, whether there are rosin joint and dry joint for testing a metal-oxide-semiconductor be welded on circuit board, described proving installation comprises a control module, one display unit be connected with described control module, one switch and first to fourth contact element, described control module comprises a power pins, one signal receives pin, one signal output pin and an enable pin, described power pins is connected with a power supply, and be connected with described the first contact element by one first resistance, also by described the first resistance and one second resistance, with described enable pin, be connected successively, described signal receives pin and is connected with described the second contact element, described signal output pin is connected with described the 3rd contact element, one end of described switch is connected with described enable pin, the other end ground connection of described switch also is connected with described the 4th contact element, during test, node on the drain electrode of the described metal-oxide-semiconductor of described first and second contact element contacts and described circuit board between one first electronic component, node on the grid of the described metal-oxide-semiconductor of described the 3rd contact element contacts and described circuit board between one second electronic component, node on the source electrode of the described metal-oxide-semiconductor of described the 4th contact element contacts and described circuit board between one the 3rd electronic component, closed described switch, described control module is started working, described signal output pin is exported the grid of a control signal to described metal-oxide-semiconductor, if described signal receives pin and receives high level signal, described control module is controlled described display unit and is shown that described metal-oxide-semiconductor exists rosin joint and dry joint, if described signal receives pin and receives low level signal, described control module is controlled described display unit and is shown that described metal-oxide-semiconductor does not exist rosin joint and dry joint.
Proving installation of the present invention contacts grid, drain electrode and the source electrode of described metal-oxide-semiconductor by described first to fourth contact element, and whether grid, drain electrode and the source electrode of testing described metal-oxide-semiconductor by described control module rosin joint and dry joint occur, and the result that shows test by described display unit, so that test result is accurate and testing cost is lower.
The accompanying drawing explanation
In conjunction with better embodiment, the present invention is described in further detail with reference to the accompanying drawings:
The circuit diagram that Fig. 1 is proving installation better embodiment of the present invention.
Fig. 2 is the circuit diagram that proving installation of the present invention is tested metal-oxide-semiconductor.
The main element symbol description
| Proving installation | 10 |
| |
11、20 |
| |
12 |
| Display unit | 13 |
| Contact element | 14-17 |
| |
22、26、28 |
| Switch | K |
| Resistance | R1、R2 |
| Metal-oxide-semiconductor | Q |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Please refer to Fig. 1 and Fig. 2, whether proving installation 10 of the present invention rosin joint and dry joint occur for the metal-oxide-semiconductor Q that tests DirectEFT encapsulation on a circuit board 20.The better embodiment of described proving installation 10 comprises a circuit board 11, a control module 12, a display unit 13, a K switch and four contact element 14-17.Described control module 12, display unit 13 and K switch all are located on described circuit board 11, and described contact element 14-17 is connected with the element on described circuit board 11 by four cables 18.
Described control module 12 comprises that a power pins V, a signal receive pin 1, a signal output pin 2 and an enable pin 3.Described power pins V is connected with a power Vcc, and is connected with described contact element 14 by a resistance R 1 and described cable 18, also by described resistance R 1 and a resistance R 2, with described enable pin 2, is connected successively.Described signal receives pin 1 and is connected with described contact element 15 by described cable 18.Described signal output pin 2 is connected with described contact element 16 by described cable 18.One end of described K switch is connected with described enable pin 3.The other end ground connection of described K switch, and be connected with described contact element 17 by described cable 18.Described control module 12 is connected with described display unit 13.In the present embodiment, described contact element 14-17 is probe.
During test, because the pin of grid, drain electrode and the source electrode of described metal-oxide-semiconductor Q is little and all be positioned at the bottom surface of metal-oxide-semiconductor Q, described contact element 14-17 can't directly be connected with the pin of described metal-oxide-semiconductor Q.Therefore, need first to find out three electronic components 22,26,28 that are connected with grid, drain electrode and the source electrode of described metal-oxide-semiconductor Q on circuit board 20, again by described contact element 14 and the drain electrode of the described metal-oxide-semiconductor Q of 15 contact and the Node B between described electronic component 26, by the grid of the described metal-oxide-semiconductor Q of described contact element 16 contact and the node A between described electronic component 22, by the source electrode of the described metal-oxide-semiconductor Q of described contact element 17 contact and the node C between described electronic component 28.After closed described K switch, described enable pin 3 receives low level signal, and described control module 12 is started working, and described signal output pin 2 output one control signals are given the grid of described metal-oxide-semiconductor Q, to open described metal-oxide-semiconductor Q.Now, if described metal-oxide-semiconductor Q exists rosin joint and dry joint, Node B and C will be not can conducting, described signal receives pin 1 and will receive high level signal, described control module 12 will be controlled the described metal-oxide-semiconductor Q of described display unit 13 demonstration and have rosin joint and dry joint thereupon; If described metal-oxide-semiconductor Q does not exist rosin joint and dry joint, Node B and C will be switched on, and described signal receives pin 1 and will receive low level signal, and described control module 12 is controlled the described metal-oxide-semiconductor Q of described display unit 13 demonstration and do not had rosin joint and dry joint thereupon.
In the present embodiment, described metal-oxide-semiconductor Q is the NMOS pipe, and the control signal of described signal output pin 2 outputs is high level signal, and described control module 12 is single-chip microcomputer, and described display unit 13 is liquid crystal display.In other embodiments, described metal-oxide-semiconductor Q can be the PMOS pipe, and, when described metal-oxide-semiconductor Q can be the PMOS pipe, the control signal of described signal output pin 2 outputs is low level signal.Described display unit 13 can be light emitting diode etc., and other has the electronic component of Presentation Function.
Proving installation 10 of the present invention contacts grid, drain electrode and the source electrode of described metal-oxide-semiconductor Q by described contact element 14-17, and whether grid, drain electrode and the source electrode of testing described metal-oxide-semiconductor Q by described control module 12 rosin joint and dry joint occur, and the result that shows test by described display unit 13, so that test result is accurate and testing cost is lower.
Claims (4)
1. a proving installation, whether there are rosin joint and dry joint for testing a metal-oxide-semiconductor be welded on circuit board, described proving installation comprises a control module, one display unit be connected with described control module, one switch and first to fourth contact element, described control module comprises a power pins, one signal receives pin, one signal output pin and an enable pin, described power pins is connected with a power supply, and be connected with described the first contact element by one first resistance, also by described the first resistance and one second resistance, with described enable pin, be connected successively, described signal receives pin and is connected with described the second contact element, described signal output pin is connected with described the 3rd contact element, one end of described switch is connected with described enable pin, the other end ground connection of described switch also is connected with described the 4th contact element, during test, node on the drain electrode of the described metal-oxide-semiconductor of described first and second contact element contacts and described circuit board between one first electronic component, node on the grid of the described metal-oxide-semiconductor of described the 3rd contact element contacts and described circuit board between one second electronic component, node on the source electrode of the described metal-oxide-semiconductor of described the 4th contact element contacts and described circuit board between one the 3rd electronic component, closed described switch, described control module is started working, described signal output pin is exported the grid of a control signal to described metal-oxide-semiconductor, if described signal receives pin and receives high level signal, described control module is controlled described display unit and is shown that described metal-oxide-semiconductor exists rosin joint and dry joint, if described signal receives pin and receives low level signal, described control module is controlled described display unit and is shown that described metal-oxide-semiconductor does not exist rosin joint and dry joint.
2. proving installation as claimed in claim 1 is characterized in that: when described metal-oxide-semiconductor is the NMOS pipe, the control signal of described signal output pin output is high level signal; When described metal-oxide-semiconductor is the PMOS pipe, the control signal of described signal output pin output is low level signal.
3. proving installation as claimed in claim 1, it is characterized in that: described first to fourth contact element is probe.
4. proving installation as claimed in claim 1, it is characterized in that: described the first resistance is connected with described the first contact element by a cable, described signal receives pin and is connected with described the second contact element by a cable, described signal output pin is connected with described the 3rd contact element by a cable, and the other end of described switch is connected with described the 4th contact element by a cable.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210185984 CN103472346A (en) | 2012-06-07 | 2012-06-07 | Test device |
| TW101121228A TW201351521A (en) | 2012-06-07 | 2012-06-14 | Test device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210185984 CN103472346A (en) | 2012-06-07 | 2012-06-07 | Test device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103472346A true CN103472346A (en) | 2013-12-25 |
Family
ID=49797270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210185984 Pending CN103472346A (en) | 2012-06-07 | 2012-06-07 | Test device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103472346A (en) |
| TW (1) | TW201351521A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594105A (en) * | 2018-02-07 | 2018-09-28 | 深圳微步信息股份有限公司 | The detection method of mainboard indication lamp control circuit |
| CN111402770A (en) * | 2020-04-21 | 2020-07-10 | 昆山龙腾光电股份有限公司 | Testing device of display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226643B (en) * | 2016-07-05 | 2020-09-11 | 国营芜湖机械厂 | Insufficient soldering inspection and judgment method for BGA and CSP chip spherical soldering points |
-
2012
- 2012-06-07 CN CN 201210185984 patent/CN103472346A/en active Pending
- 2012-06-14 TW TW101121228A patent/TW201351521A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108594105A (en) * | 2018-02-07 | 2018-09-28 | 深圳微步信息股份有限公司 | The detection method of mainboard indication lamp control circuit |
| CN111402770A (en) * | 2020-04-21 | 2020-07-10 | 昆山龙腾光电股份有限公司 | Testing device of display device |
| CN111402770B (en) * | 2020-04-21 | 2022-05-24 | 昆山龙腾光电股份有限公司 | Testing device for display device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201351521A (en) | 2013-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131225 |