CN113125927B - Test circuit and method for acquiring junction temperature thermal resistance model of power module - Google Patents
Test circuit and method for acquiring junction temperature thermal resistance model of power module Download PDFInfo
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- G—PHYSICS
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Abstract
The invention discloses a test circuit and a test method for acquiring a junction temperature thermal resistance model of a power module, which convert the temperature rising physical characteristics of an IGBT and a diode in a temperature rising formula into a temperature falling and changing process in an actual detection process by skillfully utilizing the changing relation of temperature, further realize the detection of the power module by solving the temperature reducing curves of the IGBT and the diode under different power consumption to acquire the junction temperature thermal resistance value of the power module, and have the advantages of simple test circuit, simple and easily controlled test method, direct measurement of the junction temperature by utilizing the temperature sensitive parameter of a PN junction, no special treatment of the power module is needed, and the test circuit is suitable for any type of power module and has stronger applicability.
Description
Technical Field
The invention relates to the technical field of semiconductor testing, in particular to a testing circuit and a testing method for acquiring a junction temperature thermal resistance model of a power module.
Background
An IGBT module is typically packaged with a plurality of power switches as a kind of power element. Each power switch (power module) is composed of an IGBT and a diode (English: diode) which are connected in parallel. In application, current flows through the IGBT and the diode in a time sharing way, and a large amount of heat is generated. When the heat exceeds the range that the semiconductor can withstand, the power module may be damaged. Therefore, the internal junction temperature of the power module is obtained, and the regulation control algorithm limits the internal hot spot temperature not to exceed the highest junction temperature, so that the method has important significance for protecting the power module. In the prior art, the internal junction temperature is usually obtained through calculation, and how to obtain a relatively accurate junction temperature thermal resistance value of the power module is an urgent problem to be solved in the process of calculating the internal junction temperature.
In the prior art, a thermistor temperature change curve and a junction temperature response curve are generally utilized to sequentially obtain a thermistor impedance curve of a switching device, then the thermistor impedance curve is fitted to obtain a thermal impedance expression, a second-order for thermal impedance equivalent circuit is obtained by utilizing the thermal impedance expression, and then a thermal resistance network model is established. The method is complex, has large calculation amount, is suitable for a full-bridge circuit of a three-phase inverter, and is not suitable for a single power module (comprising an IGBT and a diode).
For a single power module, the prior art method generally adopts the steps of uncovering the power module, removing an upper cover, measuring the temperature of an internal chip and a diode when the power module operates by using a thermal imager, and simultaneously arranging a temperature sensor on a shell of the power module for measuring the temperature of the shell when the IGBT operates, and then calculating the junction temperature thermal resistance of the power module through the measured temperature between the two. However, in order to realize the thermal imager test and avoid the reflection effect, the thermal resistance test method for the single power module needs to make the internal filler of the power module black and customize the chip of the power module (can be detected by the thermal imager), and the manufacturing cost of the customized power module is extremely high; the test method needs to cover the power module, is not applicable to the injection molding type power module, and has low applicability. For example, the method for measuring the steady-state thermal resistance of the IGBT disclosed in China patent application No. 2014100380886 is characterized in that the front side of the IGBT device is provided with a cap, the surface of a chip of the IGBT device is completely exposed, the temperature of an internal chip and a diode of the power module is indirectly obtained through an infrared thermal imager, and the method is high in test cost, poor in accuracy and not suitable for an injection molding type power module or a double-sided cooling type power module.
Disclosure of Invention
The invention aims to overcome the defects of high test cost, poor accuracy and inapplicability to a filling mode power module or a double-sided cooling power module in the test method for the junction temperature thermal resistance value of a single power module in the prior art, and provides a test circuit and a test method for acquiring the junction temperature thermal resistance model of the power module.
In order to achieve the above object, the present invention provides the following technical solutions:
a test circuit for acquiring a power module junction temperature thermal resistance model, comprising: the device comprises a control circuit, a first constant current test source, a second constant current test source, a voltage source and a heating current source; the voltage source, the heating current source, the first constant current testing source and the second constant current testing source are all connected to the control sub-circuit, and are all used for being connected to the power module under the control of the control circuit; wherein, the power module includes: IGBTs and diodes;
the control circuit is used for controlling the first constant current test source to output a first test current to the IGBT, acquiring a curve of voltage drop between the grid and the emitter of the IGBT along with junction temperature change of the IGBT under the condition of preset test current, and fitting to obtain a temperature-sensitive coefficient of the IGBT;
the control circuit is used for controlling the second constant current test source to output a second test current to the diode, obtaining a curve of voltage drop between the anode and the cathode of the diode along with junction temperature change of the diode under the condition of preset test current, and fitting to obtain a temperature-sensitive coefficient of the diode;
the control circuit is also used for controlling the voltage source to output voltage to the grid electrode of the IGBT so as to enable the IGBT to be conducted in the forward direction; after the IGBT is conducted in the forward direction, controlling the heating current source to output heating current to the IGBT so as to increase the junction temperature of the IGBT; after the junction temperature of the IGBT is stable, controlling the voltage source and the heating current source to stop outputting heating voltage and heating current to the IGBT, controlling the first constant current test source to output test current to the IGBT, obtaining a first cooling curve of the IGBT according to a temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output test current to the diode after the junction temperature of the IGBT is stable, obtaining a first cooling curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a first temperature-rising coefficient of a power module when loading power for the IGBT according to the first cooling curve of the IGBT and the first cooling curve of the diode;
the control circuit is also used for controlling the heating current source to output heating current to the diode so as to increase the junction temperature of the diode; after the junction temperature of the diode is stable, controlling the heating current source to stop outputting heating current to the diode, controlling the first constant current test source to output testing current to the IGBT, obtaining a second temperature-reducing curve of the IGBT according to the temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output testing current to the diode after the junction temperature of the diode is stable, obtaining the second temperature-reducing curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a second temperature-increasing coefficient of the power module when loading power consumption of the diode according to the second temperature-reducing curve of the IGBT and the second temperature-reducing curve of the diode;
and establishing a junction temperature thermal resistance model of the power module according to the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
The invention utilizes the principle that the forward tube voltage drop of the PN junction of the semiconductor is in linear relation with the temperature, and aims at two heating components of the IGBT and the diode to measure the temperature. The IGBT measurement target is the gate-emitter PN junction voltage Vge, and the diode measurement target is the diode forward PN junction voltage Vec (since the diode is connected in anti-parallel between the collector c and emitter e of the IGBT, the diode forward voltage drop is Vec). In temperature measurement, the IGBT and the diode are heated to a steady state respectively (namely, different powers are loaded to the IGBT and the diode respectively), then heating is stopped, vge and Vec are measured to obtain cooling curves of the IGBT and the diode in two different power states respectively, the influence of the IGBT heating on the temperature of the IGBT and the diode is characterized and evaluated through a first cooling curve, and a second cooling curve is used for evaluating the influence of the diode heating on the temperature of the IGBT and the diode. And performing exponential fitting on the two groups of cooling curves to obtain the thermal resistance parameters of the IGBT and the diode and the thermal resistance parameters of the IGBT and the diode.
Preferably, in the above test circuit for obtaining a junction temperature thermal resistance model of a power module, the control circuit includes: the controller is connected with the switch assembly;
the switch assembly is used for performing line switching according to a control instruction of the controller so that the first constant current test source, the second constant current test source, the voltage source and the heating current source are connected to the power module in a switching mode.
Preferably, in the test circuit for obtaining a junction temperature thermal resistance model of a power module, the switch assembly includes: a first switch and a second switch;
the first end of the first switch is connected with the controller, the second end of the first switch is connected with the grid electrode of the IGBT, and the third end of the first switch is used for being connected with the voltage source or the first constant current test source under the control instruction of the controller;
the first end of the second switch is connected with the controller, the second end of the second switch is connected with the cathode of the diode, and the third end of the second switch is used for being connected with the heating current source or the second constant current test source under the control instruction of the controller.
In a further embodiment of the present invention, a method for obtaining a junction temperature thermal resistance model of a power module by using the test circuit for obtaining a junction temperature thermal resistance model of a power module is provided, including:
controlling a first constant current test source to output a first test current to an IGBT, obtaining a curve of voltage drop between a grid electrode and an emitter electrode of the IGBT along with junction temperature change of the IGBT under the condition of a preset test current, and fitting to obtain a temperature-sensitive coefficient of the IGBT; controlling a second constant current test source to output a second test current to a diode, obtaining a curve of voltage drop between the anode and the cathode of the diode along with junction temperature change of the diode under the condition of preset test current, and fitting to obtain a temperature-sensitive coefficient of the diode;
controlling the voltage source to output voltage to the grid electrode of the IGBT so as to enable the IGBT to be tested to be conducted in the forward direction; after the IGBT is conducted in the forward direction, controlling the heating current source to output heating current to the IGBT so as to increase the junction temperature of the IGBT; after the junction temperature of the IGBT is stable, controlling the voltage source and the heating current source to stop outputting heating voltage and heating current to the IGBT, controlling the first constant current test source to output test current to the IGBT, obtaining a first cooling curve of the IGBT according to a temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output test current to the diode after the junction temperature of the IGBT is stable, obtaining a first cooling curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a first temperature-rising coefficient of a power module when loading power for the IGBT according to the first cooling curve of the IGBT and the first cooling curve of the diode;
controlling the heating current source to output heating current to the diode so as to increase the junction temperature of the diode; after the junction temperature of the diode is stable, controlling the heating current source to stop outputting heating current to the diode, controlling the first constant current test source to output testing current to the IGBT, obtaining a second temperature-reducing curve of the IGBT according to the temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output testing current to the diode after the junction temperature of the diode is stable, obtaining the second temperature-reducing curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a second temperature-increasing coefficient of the power module when loading power consumption of the diode according to the second temperature-reducing curve of the IGBT and the second temperature-reducing curve of the diode;
and establishing a junction temperature thermal resistance model of the power module according to the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
Preferably, in the method for obtaining the junction temperature thermal resistance model of the power module, the junction temperature thermal resistance model of the power module is established by the following formula:
wherein DeltaT i For the temperature rise of IGBT, deltaT d For the temperature rise of the diode, zth ii To load the IGBT with the first temperature rise coefficient of the IGBT when the power is consumed, zth id To load the diode with the second temperature rise coefficient of IGBT when power is consumed, zth di To load the IGBT with the first temperature rise coefficient of the diode during power consumption, zth dd To load the diode with the second temperature rise coefficient of the diode when the power is consumed, P i For power consumption of IGBT, P d Is the power consumption of the diode.
Preferably, in the method for obtaining the junction temperature thermal resistance model of the power module, a temperature sensor in the power module is used for performing temperature test to obtain the number of junction temperature tests in the power module, and the junction temperature thermal resistance model of the power module is built by combining the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
Preferably, in the method for obtaining the junction temperature thermal resistance model of the power module, a temperature sensor is additionally arranged outside the power module to perform temperature test, so as to obtain the number of the junction temperature tests outside the power module;
and establishing a junction temperature thermal resistance model of the multi-node power module by combining the internal junction temperature test number of the power module with the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
Preferably, in the method for obtaining the junction temperature thermal resistance model of the power module, the power module is placed in an incubator, and the temperature of the incubator is changed to obtain a curve of the voltage drop between the gate and the emitter of the IGBT along with the junction temperature change of the IGBT and a curve of the voltage drop between the anode and the cathode of the diode along with the junction temperature change of the diode, and the IGBT temperature-sensitive coefficient and the diode temperature-sensitive coefficient are obtained by fitting.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the temperature change relation is skillfully utilized, the temperature rise physical characteristics of the IGBT and the diode in the temperature rise formula are converted into the temperature drop change process in the actual detection process, and then the junction temperature thermal resistance value of the power module is obtained by detecting the power module by solving two groups of cooling curves under the loading power consumption of the IGBT and the loading power consumption of the diode, and the junction temperature thermal resistance characteristics of the power module (comprising the IGBT and the diode) can be more comprehensively represented through the synergistic effect of the two groups of cooling curves, so that a more accurate single power module junction temperature thermal resistance model is obtained. The testing circuit provided by the invention is simple, the testing method is simple and easy to control, the junction temperature is directly measured by utilizing the temperature-sensitive parameter of the PN junction, the measurement result is closest to the actual temperature, special treatment on the power module is not needed, and the testing circuit is suitable for any type of power module and has stronger applicability.
Description of the drawings:
FIG. 1 is a schematic block diagram of a test circuit for obtaining a power module junction temperature thermal resistance model;
FIG. 2 is a schematic diagram 1 of a test circuit connection for obtaining a power module junction temperature thermal resistance model;
FIG. 3 is a schematic diagram of a test circuit connection for obtaining a power module junction temperature thermal resistance model 2;
FIG. 4 is a schematic diagram of a test circuit connection for obtaining a power module junction temperature thermal resistance model 3;
fig. 5 is a schematic diagram of a test circuit connection for obtaining a power module junction temperature thermal resistance model 4.
Detailed Description
The present invention will be described in further detail with reference to test examples and specific embodiments. It should not be construed that the scope of the above subject matter of the present invention is limited to the following embodiments, and all techniques realized based on the present invention are within the scope of the present invention.
Example 1
FIG. 1 illustrates a schematic block diagram of a test circuit for obtaining a power module junction temperature thermal resistance model according to an exemplary embodiment of the invention, comprising: control circuit, first constant current test source I 1 (10 mA), second constant current test source I 2 (10 mA), voltage source U 1 (15V) and heating Current Source I 0 (100A) The method comprises the steps of carrying out a first treatment on the surface of the The voltage source U 1 Heating current source I 0 First constant current test source I 1 Second constant current test source I 2 Are all connected with the control sub-circuit, and the voltage source, the heating current source, the first constant current test source and the second constant current test source are all used for being connected with power under the control of the control circuitA rate module; wherein, the power module includes: IGBTs and diodes.
Further, the control circuit includes: the controller is connected with the switch assembly; the switch assembly is used for performing line switching according to a control instruction of the controller so that the first constant current test source, the second constant current test source, the voltage source and the heating current source are connected to the power module in a switching mode. As further shown in fig. 2 (controller not shown), the switch assembly includes: first switch K 1 Second switch K 2 ；
Wherein the first switch K 1 Is connected with the controller, the first switch K 1 A third end of the first switch is connected with the grid of the IGBT, and a third end of the first switch is used for being connected with the voltage source U under the control instruction of the controller 1 Or the first constant current test source I 1 Connecting; when the first switch is connected to the voltage source U 1 When the voltage is higher than the threshold voltage, the voltage is connected between the grid electrode g and the emitter electrode e of the IGBT, and the IGBT is turned on by the output voltage; after U1 is loaded, the IGBT is conducted, and current flows from the collector c to the emitter e, so that the IGBT generates heat. When the first switch is connected to the first constant current test source I 1 When the temperature-sensitive parameter is measured at different constant temperatures, the Vge at the temperature point is obtained, and the temperature-sensitive parameter of the IGBT can be linearly fitted: ki and ai.
Wherein the second switch K 2 Is connected with the controller, the second switch K 2 Is connected to the negative electrode of the diode, the second switch K 2 Is used for being connected with the heating current source I under the control instruction of the controller 0 Or the second constant current test source I 2 And (5) connection. When the second switch is connected to the heating current source I 0 In this case, the current is connected between the collector c (cathode) and the emitter e (anode) of the IGBT to provide a positive heating current (flowing from c to e) and a negative heating current (flowing from c to e)e flows to c) the heating current, the positive current heats the IGBT and the negative current heats the diode. When the second switch is connected to the second constant current test source I 2 When the voltage drop Vec is measured, the constant forward current is provided for the voltage drop Vec between the emitter e and the collector c; by measuring at different constant temperatures, vec at the temperature point is obtained, and the temperature-sensitive parameters of the diode can be linearly fitted: k (k) d And a d . Further, the test circuit further includes: the first voltmeter is used for measuring Vge, the second voltmeter is used for measuring Vec, and the ammeter is used for measuring current in the power loop.
In a further embodiment of the present invention, the test circuit for obtaining a junction temperature thermal resistance model of a power module obtains the junction temperature thermal resistance model of the power module by the following method, including: acquiring PN junction characteristic parameters of an IGBT and a diode: and measuring voltage values of Vge and Vec at a plurality of temperature points, and performing linear fitting on the voltage and the temperature to obtain a temperature-sensitive parameter equation of the IGBT and the diode: vi=ki+ti+ai and vd=kd+td+ad; and (3) heating the IGBT, measuring Vge and Vec, obtaining PN junction voltage curves of the IGBT and the diode in the cooling process, and converting the PN junction voltage curves into temperature reduction curves through the characteristic curves of the step (1). And (3) heating the diode, measuring Vge and Vec, obtaining PN junction voltage curves of the IGBT and the diode in the cooling process, and converting the PN junction voltage curves into temperature reduction curves through the characteristic curves of the step (1). Exponential fitting of temperature reduction curve t=t 0 *e -t/τ . The time constant τ is converted to Zth. Zth contains four sets of data Zthii, zthid, zthdi, zthdd.
The application method comprises the following steps:
the loss of the IGBT and the diode is calculated in real time through controller software, and the temperature rise of the IGBT and the diode can be calculated by combining with Zth obtained in the test.
Wherein DeltaT i For the temperature rise of IGBT, deltaT d For the temperature rise of the diode, zth ii To add to IGBTIGBT temperature rise and Zth during power consumption of 1W load id IGBT temperature rise, zth, when loading 1W power consumption for diode di Diode temperature rise, zth, when loading 1W power consumption for IGBT dd Diode temperature rise, P when loading 1W of power consumption for the diode i For power consumption of IGBT, P d Is the power consumption of the diode.
Further, the specific technical scheme and implementation steps of the test method for obtaining the junction temperature thermal resistance model of the power module are as follows:
1.1: determining a temperature profile of an IGBT
a) And placing the power module in an incubator, and after the temperature is stable, the junction temperature of the IGBT and the diode in the module is the same as the temperature of the incubator.
b) Recording the temperature number of the incubator to obtain the junction temperature of the IGBT at the moment;
c) Connecting a test circuit according to FIG. 2, connecting K1 to I1, recording the reading of V1;
d) Repeating the steps at two temperature points, and obtaining a temperature-sensitive parameter k corresponding to the IGBT according to a formula of V=k x T+a i And a i Is a value of (2).
1.2: the power module is arranged in a real water cooling environment, and the cooling liquid uses rated flow and constant temperature.
1.3: and heating the IGBT for a long time, and keeping the temperature stable.
a) According to the test circuit connected in FIG. 3, K1 is connected with U1 to turn on the IGBT, K2 is connected with I0, and the current flows from c to e through the turned-on IGBT to heat the IGBT.
b) A0 shows the current through the IGBT and V2 shows the voltage drop across the IGBT, then the power across the IGBT is P i ＝A0*V2。
1.4: the temperature decrease profile of the IGBT (IGBT-IGBT) was measured.
a) According to the connection circuit shown in FIG. 4, the current output of I0 is turned off, while K1 is connected to I1, and V is continuously measured by using V1 i 。
b) Using V i ＝k i *T+a i V is set up i And converting into temperature to obtain a cooling curve of the IGBT under the loading power consumption Pi of the IGBT.
1.5: in order to ensure the accuracy of the diode cooling curve, 1.3 can be repeated at this time, the IGBT is heated first, and then the cooling curve of the diode (IGBT-diode) is measured.
a) According to the connection circuit shown in FIG. 5, the current output of I0 is turned off, while K2 is connected to I2, and V is continuously measured by using V2 d 。
b) Using V d ＝k d *T+a d V is set up d Conversion to temperature, obtaining the loading power consumption P of IGBT i And (3) a cooling curve of the diode.
1.6: after exponential fitting is carried out on the two cooling curves, a first temperature rise parameter Zth of the power module is obtained ii 、Zth di 。
2.1: determining a temperature profile of a diode
a) And placing the power module in an incubator, and after the temperature is stable, the junction temperature of the IGBT and the diode in the module is the same as the temperature of the incubator.
b) Recording the temperature number of the incubator to obtain the junction temperature of the diode at the moment;
c) Connecting test circuit K2 to I2 (current flows from e to c), and recording the reading of V2;
2.2: the power module is arranged in a real water cooling environment, and the cooling liquid uses rated flow and constant temperature.
2.3: and heating the diode for a long time, and keeping the temperature stable.
The test circuit K2 is connected to I0, and a current flows from e to c through the diode, thereby heating the diode. A0 shows the current through the diode, V2 shows the voltage drop across the diode, and the power across the diode is pd=a0×v2.
2.4: the temperature decrease profile of the IGBT (diode-IGBT) was measured.
a) Turning off the current output of I0 while K1 is connected to I1, and continuously measuring V using V1 i 。
b) Using V i ＝k i *T+a i V is set up i And converting into temperature to obtain a cooling curve of the IGBT under the loading power consumption Pd of the diode.
2.5: in order to ensure the accuracy of the diode cooling curve, 2.3 times can be repeated, the diode is heated first, and the cooling curve (diode-diode) of the diode is measured.
a) Turning off the current output of I0 while K2 is connected to I2, and continuously measuring V using V2 d 。
b) Using V d ＝k d *T+a d V is set up d Conversion to temperature, obtaining the power consumption P of diode loading d And (3) a cooling curve of the diode.
2.7 obtaining the Zth after performing the exponential fitting to the data dd 、Zth id 。
In this embodiment, we obtain a first cooling curve and a second cooling curve under two powers by respectively heating the IGBT and the diode, and characterize and evaluate the temperature influence of the IGBT heating on the IGBT and the diode through the first cooling curve, and the second cooling curve is used for evaluating the temperature influence of the diode heating on the IGBT and the diode, so that the junction temperature thermal resistance characteristics of the power module (including the IGBT and the diode) can be more comprehensively characterized through the synergistic effect of the two sets of curves, and a more accurate single power module junction temperature thermal resistance model is obtained.
Example 2
The junction temperature thermal resistance test model in the embodiment 1 is expanded to a multi-node thermal resistance model, so that a multi-node thermal resistance network is realized.
In practice, a water temperature sensor may be absent from the system, resulting in the reference temperature in the above method being unknown. The power module typically has a temperature sensor (ntc) integrated therein, so ntc can be placed as a measurable node into the thermal resistance model. In this application, a set of ntc measurement data is added to each of the above measurement procedures to obtain a four-node model (IGBT, diode, ntc, coolant).
Because ntc does not generate heat, only the temperature reduction curve of ntc is measured and calculated in the heating process of the IGBT and the diode to obtain Zth ni 、Zth nd . The temperature difference of the IGBT, diode, ntc with respect to the coolant is obtained according to the following formula. While ntc is perceivable, the temperature of the current coolant, and the temperature of the IGBT, diode can be back calculated.
T coolant ＝T n -deltaT n
T i ＝T coolant +deltaT i
T d ＝T coolant +deltaT d
The method for abstracting the real object into the mathematical model can effectively meet the practical requirements, and the system is not required to be modified by test implementation. When higher precision applications are required, the abstract model needs to be complicated, so that the mathematical model is further close to the real object. Furthermore, two measurable points can be additionally added on the basis of the internal temperature sensor test points to form a junction temperature thermal resistance test model of 6 nodes. The two additional temperature measurement points are: directly under the radiator surface IGBT (hi) and directly under the radiator surface diode (hd). The two points are positioned on the main heat dissipation path of the heating element (IGBT, diode), and the temperature of the two points can reflect the heat dissipation parameters of the IGBT and the diode. On these two measuring points, two temperature sensors are additionally arranged by special processing means to measure the temperature (T hi ,T hd ). Note that the machining means should minimize damage to the physical model. By the above method, temperature data of each measurement point (IGBT, diode, ntc, hs_i, hs_d, coolant) is obtained when the IGBT and the diode are heated respectively by the above method. Thereby obtaining the thermal resistance relation among the nodes. The 6 are subjected to physical modeling (the modeling method is not in the patent scope), so that the thermal resistance relation obtained by measurement can be met, and therefore, the high-order thermal resistance parameters of the IGBT and the diode pair coolant in practical application are derived. The additional two temperature sensors are only added in the test object, and in a real application system, the two sensors are not present.
The foregoing is a detailed description of specific embodiments of the invention and is not intended to be limiting of the invention. Various alternatives, modifications and improvements will readily occur to those skilled in the relevant art without departing from the spirit and scope of the invention.
Claims (8)
1. A test circuit for acquiring a junction temperature thermal resistance model of a power module, comprising: the device comprises a control circuit, a first constant current test source, a second constant current test source, a voltage source and a heating current source; the voltage source, the heating current source, the first constant current testing source and the second constant current testing source are all connected to the control circuit, and are all used for being connected to the power module under the control of the control circuit; wherein, the power module includes: IGBTs and diodes;
the control circuit is used for controlling the first constant current test source to output a first test current to the IGBT, acquiring a curve of voltage drop between the grid and the emitter of the IGBT along with junction temperature change of the IGBT under the condition of preset test current, and fitting to obtain a temperature-sensitive coefficient of the IGBT;
the control circuit is used for controlling the second constant current test source to output a second test current to the diode, obtaining a curve of voltage drop between the anode and the cathode of the diode along with junction temperature change of the diode under the condition of preset test current, and fitting to obtain a temperature-sensitive coefficient of the diode;
the control circuit is also used for controlling the voltage source to output voltage to the grid electrode of the IGBT so as to conduct the IGBT to be tested; after the IGBT is conducted, controlling the heating current source to output heating current to the IGBT so as to increase the junction temperature of the IGBT; after the junction temperature of the IGBT is stable, controlling the voltage source and the heating current source to stop outputting heating voltage and heating current to the IGBT, controlling the first constant current test source to output test current to the IGBT, obtaining a first cooling curve of the IGBT according to a temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output test current to the diode after the junction temperature of the IGBT is stable, obtaining a first cooling curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a first temperature-rising coefficient of a power module when loading power for the IGBT according to the first cooling curve of the IGBT and the first cooling curve of the diode;
the control circuit is also used for controlling the heating current source to output heating current to the diode so as to increase the junction temperature of the diode; after the junction temperature of the diode is stable, controlling the heating current source to stop outputting heating current to the diode, controlling the first constant current test source to output testing current to the IGBT, obtaining a second temperature-reducing curve of the IGBT according to the temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output testing current to the diode after the junction temperature of the diode is stable, obtaining the second temperature-reducing curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a second temperature-increasing coefficient of the power module when loading power consumption of the diode according to the second temperature-reducing curve of the IGBT and the second temperature-reducing curve of the diode;
and establishing a junction temperature thermal resistance model of the power module according to the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
2. The test circuit of claim 1, wherein the control circuit comprises: the controller is connected with the switch assembly;
the switch assembly is used for performing line switching according to a control instruction of the controller so that the first constant current test source, the second constant current test source, the voltage source and the heating current source are connected to the power module in a switching mode.
3. The test circuit of claim 2, wherein the switch assembly comprises: a first switch and a second switch;
the first end of the first switch is connected with the controller, the second end of the first switch is connected with the grid electrode of the IGBT, and the third end of the first switch is used for being connected with the voltage source or the first constant current test source under the control instruction of the controller;
the first end of the second switch is connected with the controller, the second end of the second switch is connected with the cathode of the diode, and the third end of the second switch is used for being connected with the heating current source or the second constant current test source under the control instruction of the controller.
4. A method for obtaining a junction temperature thermal resistance model of a power module by using the test circuit as claimed in any one of claims 1-3, the method comprising:
controlling a first constant current test source to output a first test current to an IGBT, obtaining a curve of voltage drop between a grid electrode and an emitter electrode of the IGBT along with junction temperature change of the IGBT under the condition of a preset test current, and fitting to obtain a temperature-sensitive coefficient of the IGBT; controlling a second constant current test source to output a second test current to a diode, obtaining a curve of voltage drop between the anode and the cathode of the diode along with junction temperature change of the diode under the condition of preset test current, and fitting to obtain a temperature-sensitive coefficient of the diode;
and controlling the voltage source to output voltage to the grid electrode of the IGBT so as to conduct the IGBT to be tested; after the IGBT is conducted, controlling the heating current source to output heating current to the IGBT so as to increase the junction temperature of the IGBT; after the junction temperature of the IGBT is stable, controlling the voltage source and the heating current source to stop outputting heating voltage and heating current to the IGBT, controlling the first constant current test source to output test current to the IGBT, obtaining a first cooling curve of the IGBT according to a temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output test current to the diode after the junction temperature of the IGBT is stable, obtaining a first cooling curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a first temperature-rising coefficient of a power module when loading power for the IGBT according to the first cooling curve of the IGBT and the first cooling curve of the diode;
controlling the heating current source to output heating current to the diode so as to increase the junction temperature of the diode; after the junction temperature of the diode is stable, controlling the heating current source to stop outputting heating current to the diode, controlling the first constant current test source to output testing current to the IGBT, obtaining a second temperature-reducing curve of the IGBT according to the temperature-sensitive coefficient of the IGBT, controlling the second constant current test source to output testing current to the diode after the junction temperature of the diode is stable, obtaining the second temperature-reducing curve of the diode according to the temperature-sensitive coefficient of the diode, and obtaining a second temperature-increasing coefficient of the power module when loading power consumption of the diode according to the second temperature-reducing curve of the IGBT and the second temperature-reducing curve of the diode;
and establishing a junction temperature thermal resistance model of the power module according to the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
5. The method of obtaining a junction temperature thermal resistance model of a power module of claim 4, wherein the junction temperature thermal resistance model of the power module is established by:
wherein DeltaT i For the temperature rise of IGBT, deltaT d For the temperature rise of the diode, zth ii To load the IGBT with the first temperature rise coefficient of the IGBT when the power is consumed, zth id To load the diode with the second temperature rise coefficient of IGBT when power is consumed, zth di To load the IGBT with the first temperature rise coefficient of the diode during power consumption, zth dd To load the diode with the second temperature rise coefficient of the diode when the power is consumed, P i For power consumption of IGBT, P d Is the power consumption of the diode.
6. The method for obtaining a junction temperature thermal resistance model of a power module according to claim 5, wherein a temperature sensor in the power module is used for temperature testing to obtain a junction temperature test number in the power module, and the junction temperature thermal resistance model of the power module is built by combining the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
7. The method for obtaining a junction temperature thermal resistance model of a power module according to claim 6, wherein a temperature sensor is additionally arranged outside the power module for temperature testing, so as to obtain the number of junction temperature tests outside the power module;
and establishing a junction temperature thermal resistance model of the multi-node power module by combining the internal junction temperature test number of the power module with the first temperature rise coefficient of the power module and the second temperature rise coefficient of the power module.
8. The method for obtaining a junction temperature thermal resistance model of a power module according to any one of claims 4 to 7, wherein the power module is placed in an incubator, a curve of voltage drop between a gate and an emitter of the IGBT along with junction temperature change of the IGBT and a curve of voltage drop between a positive pole and a negative pole of the diode along with junction temperature change of the diode are obtained by changing the temperature of the incubator, and the IGBT temperature-sensitive coefficient and the diode temperature-sensitive coefficient are obtained by fitting.
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