CN111624458A - SiC MOSFET monitoring circuit and monitoring method - Google Patents

SiC MOSFET monitoring circuit and monitoring method Download PDF

Info

Publication number
CN111624458A
CN111624458A CN202010483973.0A CN202010483973A CN111624458A CN 111624458 A CN111624458 A CN 111624458A CN 202010483973 A CN202010483973 A CN 202010483973A CN 111624458 A CN111624458 A CN 111624458A
Authority
CN
China
Prior art keywords
sic mosfet
monitoring circuit
monitoring
sic
sampling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010483973.0A
Other languages
Chinese (zh)
Inventor
陈媛
贺致远
陈义强
侯波
刘昌�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Electronic Product Reliability and Environmental Testing Research Institute
Original Assignee
China Electronic Product Reliability and Environmental Testing Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Electronic Product Reliability and Environmental Testing Research Institute filed Critical China Electronic Product Reliability and Environmental Testing Research Institute
Priority to CN202010483973.0A priority Critical patent/CN111624458A/en
Publication of CN111624458A publication Critical patent/CN111624458A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests

Abstract

The invention relates to the technical field of state monitoring, and discloses a SiC MOSFET monitoring circuit and a monitoring method, wherein the SiC MOSFET monitoring circuit comprises a sampling module, a sampling module and a control module, wherein the sampling module is used for collecting an electric signal of a grid electrode of a SiC MOSFET; and the analysis module is connected with the sampling module and used for comparing the electric signal with a preset threshold value and judging whether the SiC MOSFET is aged or invalid according to a comparison result. The SiC MOSFET monitoring circuit detects, collects and processes grid electric signals of the SiC MOSFET through a sampling circuit, compares the collected electric signals with a preset threshold value, and judges whether the SiC MOSFET is aged or invalid according to a comparison result. When the SiC MOSFET monitoring circuit provided by the invention is applied to a circuit or a system containing a SiC MOSFET device, the monitoring of the state of the SiC MOSFET device and the early warning of aging failure can be realized under the condition of not interrupting the working state of the system, the interference of the monitoring process on the normal working of the system is small, and the prediction precision is high.

Description

SiC MOSFET monitoring circuit and monitoring method
Technical Field
The invention relates to the technical field of state monitoring, in particular to a SiC MOSFET monitoring circuit and a monitoring method.
Background
The silicon carbide metal oxide semiconductor transistor (SiC MOSFET) has the characteristics of high voltage resistance and disconnection, high working frequency, strong high temperature resistance, low on-state resistance, small switching loss and the like, and is widely applied to high-frequency and high-voltage power systems. With the continuous development of power electronic technology, more and more fields such as space flight, aviation, oil exploration, nuclear power, communication etc. the urgent need can be at the electronic device of extreme environment work such as high temperature, high frequency. In order to avoid the influence of aging failure of the SiC MOSFET device on the normal operation of the whole apparatus or system, the SiC MOSFET needs to be monitored for its state, and the aging degree of the module and the lifetime of the device are evaluated according to the monitored related state parameters, so that related maintenance measures such as replacing the device are taken. The existing state monitoring technology mainly aims at monitoring a Si-based device, but degradation sensitive parameters of the Si-based device are different from those of a SiC device, the SiC device cannot be effectively subjected to aging failure early warning when the SiC device is monitored according to a monitoring circuit and a monitoring method of the Si-based device, and a related state monitoring method designed for a SiC MOSFET device is not available at present.
Disclosure of Invention
Therefore, it is necessary to provide a SiC MOSFET monitoring circuit and a monitoring method for solving the problem that there is no relevant state monitoring method designed for a SiC MOSFET device for the moment.
A SiC MOSFET monitoring circuit comprises a sampling module, a sampling module and a control module, wherein the sampling module is used for acquiring an electric signal of a grid electrode of a SiC MOSFET; and the analysis module is connected with the sampling module and used for comparing the electric signal with a preset threshold value and judging whether the SiC MOSFET is aged or invalid according to a comparison result.
In one embodiment, the sampling module comprises a sampling resistor connected with the gate of the SiC MOSFET and used for collecting the gate leakage current of the SiC MOSFET; and the differential amplifier is connected with the sampling resistor and used for sensing and amplifying the voltage drop on the sampling resistor.
In one embodiment, the bandwidth of the differential amplifier is not less than twice the switching frequency of the SiC MOSFET.
In one embodiment, the input bias current of the differential amplifier is at least one order of magnitude less than the gate leakage current of the SiC MOSFET; the input offset voltage of the differential amplifier is at least one order of magnitude less than the minimum threshold voltage across the sampling resistor.
In one embodiment, the analysis module includes a comparator connected to the differential amplifier for comparing the electrical signal with a preset threshold and determining whether the SiC MOSFET is aged or failed according to the comparison result.
In one embodiment, the comparator outputs a device aging warning signal when the electric signal of the gate of the SiC MOSFET is greater than a preset threshold value.
In one embodiment, the SiC MOSFET monitoring circuit further includes a gate driving power supply connected to the sampling module for supplying power to the SiC MOSFET monitoring circuit.
In one embodiment, the gate driving power supply is a linear regulator.
A SiC MOSFET monitoring method comprises the steps of carrying out an aging test on a SiC MOSFET, and determining grid leakage current as a degradation sensitive parameter of the SiC MOSFET to carry out state monitoring; sampling the electric signal of the SiC MOSFET grid, and comparing the acquisition result with a preset threshold value; and if the electric signal of the SiC MOSFET grid is larger than a preset threshold value, judging that the device is aged and invalid, and outputting an aging early warning signal of the device.
In one embodiment, the preset threshold is determined according to an aging threshold of the SiC MOSFET.
The SiC MOSFET monitoring circuit detects and collects grid electric signals of the SiC MOSFET through the sampling circuit, compares the grid electric signals with a preset threshold value, and judges whether the SiC MOSFET is aged or invalid according to a comparison result. The SiC MOSFET monitoring circuit provided by the invention can realize monitoring of the state of the SiMOSFET device and early warning of aging failure under the condition of not interrupting the working state of the system, has small interference on the normal working of the system and has high prediction precision.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a block diagram of a SiC MOSFET monitoring circuit according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a SiC MOSFET monitor circuit in accordance with one embodiment of the present invention;
fig. 3 is a flowchart of a SiC MOSFET monitoring method according to an embodiment of the present invention.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," "front," "rear," "circumferential," and the like are based on the orientation or positional relationship shown in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present invention.
It is to be understood that "connection" in the following embodiments is to be understood as "electrical connection", "communication connection", and the like if the connected circuits, modules, units, and the like have communication of electrical signals or data with each other.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, as used in this specification, the term "and/or" includes any and all combinations of the associated listed items.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
SiC MOSFETs (silicon carbide metal oxide semiconductor transistors) are widely used in high-frequency and high-voltage power systems because of their advantages of high blocking voltage, high operating frequency, high temperature resistance, low on-resistance, low switching loss, and the like. With the continuous development of power electronic technology, more and more fields such as space flight, aviation, oil exploration, nuclear power, communication etc. the urgent need can be at the electronic device of extreme environment work such as high temperature, high frequency. Work can accelerate electronic device's ageing under high temperature, high frequency etc. extreme environment, in order to avoid the ageing failure of SiC MOSFET device to exert an influence to whole device or system normal operating, need carry out state monitoring to SiC MOSFET, according to the relevant state parameter of monitoring go the ageing degree of evaluation module and predict the device life-span to take relevant maintenance measures such as change device.
Fig. 1 is a block diagram of a SiC MOSFET monitoring circuit according to an embodiment of the present invention, in which the SiC MOSFET monitoring circuit is used for monitoring a state of a SiC MOSFET device 10 and determining whether the SiC MOSFET device 10 has an aging failure phenomenon. The SiC MOSFET monitoring circuit 20 circuit includes a sampling module 210 and an analysis module 220. The sampling module 210 is configured to collect an electrical signal of the gate of the SiC MOSFET. The analyzing module 220 is connected to the sampling module 210, and configured to compare the electrical signal with a preset threshold, and determine whether the SiC MOSFET device 10 is aged or failed according to a comparison result.
The SiC MOSFET monitoring circuit 20 provided by the invention samples the electrical signal of the gate of the SiC MOSFET device 10 through the sampling module 210, compares the sampled electrical signal of the gate of the SiC MOSFET device 10 with a preset threshold, and determines whether the SiC MOSFET device 10 is aged or failed according to the comparison result. When the SiC MOSFET monitoring circuit is applied to a circuit or a system comprising a SiC MOSFET device, the monitoring of the state of the SiC MOSFET device and the early warning of aging failure can be realized under the condition of not interrupting the working state of the system, the interference of the monitoring process on the normal working of the system is small, and the prediction precision is high.
FIG. 2 is a circuit diagram of a SiC MOSFET monitoring circuit according to an embodiment of the present invention, and as shown in FIG. 2, the sampling module 210 includes a sampling resistor R according to an embodimentGAnd a differential amplifier. The sampling resistor RGAnd is connected to the gate of the SiC MOSFET device 10 for collecting the gate leakage current of the SiC MOSFET device 10. The differential amplifier and the sampling resistor RGConnection for sensing and amplifying the sampling resistor RGThe voltage drop over.
Before designing the SiC MOSFET monitoring circuit 20, a burn-in test is first performed on the SiC MOSFET device 10 to determine degradation-sensitive parameters of the SiC MOSFET device 10, i.e., parameters that change significantly when the SiC MOSFET device 10 fails due to burn-in. When the aging failure condition of the SiC MOSFET device 10 is monitored, whether the SiC MOSFET device 10 is aged or failed is determined by collecting the selected degradation sensitive parameters and according to the change of the degradation sensitive parameters. In this embodiment, the gate leakage current I on the gate of the SiC MOSFET device 10 is setgssThe condition monitoring is performed as a degradation sensitive parameter. Selecting an appropriate sampling resistor R in designing the SiC MOSFET monitoring circuit 20GConnected to the gate of the SiC MOSFET device 10 for enabling the gate leakage current to flow from the sampling resistor RGAnd is conducted. The gate leakage current is derived from the sampling resistor RGAfter upper conduction, the sampling resistor RGA certain voltage drop will be formed. The sampling resistor R can be paired by using the differential amplifierGThe resulting voltage drop is sensed and amplified. And comparing and analyzing the sensed and amplified voltage drop with a preset threshold, and judging whether the SiMOSFET device 10 has an aging failure condition according to a comparison result.
In one embodiment, the bandwidth of the differential amplifier is not less than twice the switching frequency of the SiC MOSFET. Since the switching frequency of the SiC MOSFET device 10 is much higher than that of a common Si device, the differential amplifier selected for use in designing the SiC MOSFET monitoring circuit 20 should have a sufficient bandwidth to adapt to the switching frequency of the SiC MOSFET device 10, so that the SiC MOSFET monitoring circuit 20 can also work normally in a high frequency range, and the aging failure condition of the SiC MOSFET device 10 is monitored in real time. In this embodiment, the differential amplifier selected by the SiC MOSFET monitoring circuit 20 needs to be 2 times or more the switching frequency of the SiC MOSFET to accommodate the high frequency range.
In one embodiment, the analysis module includes a comparator connected to the differential amplifier for comparing the electrical signal with a preset threshold and determining whether the SiC MOSFET is aged or failed according to the comparison result. Since the gate leakage current on the gate of the SiC MOSFET device 10, which is in a good device state, is very small, approximately zero, the SiC MOSFET device 10 is in a good device stateThe differential amplifier is arranged at the sampling resistor RGThe sensed voltage drop is also very small. When the SiC MOSFET device 10 is aged and failed, the leakage current on the gate can reach a range of several mA, so that the differential amplifier is arranged on the sampling resistor RGThe sensed voltage drop will be correspondingly large. Therefore, the sampling resistance R can be obtained according to the differential amplifierGAnd judging whether the SiC MOSFET device 10 has an aging failure phenomenon or not according to the comparison result of the sensed voltage drop and the preset threshold value.
In one embodiment, the input bias current of the differential amplifier is at least one order of magnitude less than the gate leakage current of the SiC MOSFET; the input offset voltage of the differential amplifier is at least one order of magnitude less than the minimum threshold voltage across the sampling resistor. When the differential amplifier is selected, the input bias current of the differential amplifier is smaller than the gate leakage current of the SiC MOSFET by at least one order of magnitude, so that the SiC MOSFET monitoring circuit 20 can be prevented from generating false alarm. Since the value of the gate leakage current is small, when the input bias current of the differential amplifier is too large, the current signal to be detected by the differential amplifier is masked, so that the comparator gives an incorrect logic signal and provides incorrect monitoring information to an operator. Likewise, when the differential amplifier is selected, the input offset voltage of the differential amplifier is at least one order of magnitude less than the minimum threshold voltage across the sampling resistor, which may prevent false alarms from occurring in the SiC MOSFET monitoring circuit 20. Due to small values of gate leakage current, i.e. sampling resistor RGThe sensed voltage drop is also very small, so when the input offset voltage of the differential amplifier is too large, the voltage signal to be detected by the differential amplifier is also masked, so that the comparator gives a wrong logic signal to provide wrong monitoring information for an operator.
In one embodiment, the comparator outputs a device aging warning signal when the electric signal of the gate of the SiC MOSFET is greater than a preset threshold value. The comparator compares the electrical signal of the gate of the SiC MOSFET with the preset threshold, and if the collected voltage drop is smaller than the preset threshold, it indicates that the device state of the SiC MOSFET device 10 is good, and the comparator outputs logic 0 to indicate that the SiC MOSFET device 10 is normal. On the contrary, if the collected voltage drop is larger than the preset threshold, it indicates that the SiC MOSFET device 10 has an aging failure problem, and the comparator outputs a logic 1 to send a device aging early warning signal as a warning, indicating that the system may malfunction or affect the normal operation of the whole apparatus or system due to the aging failure of the SiC MOSFET device 10 in the near future. The staff can evaluate the aging degree of the module and predict the service life of the device according to the monitoring and analyzing result, thereby taking relevant maintenance measures such as replacing the device.
In one embodiment, the SiC MOSFET monitoring circuit 20 further includes a gate driving power supply (not shown), which is connected to the sampling module 210, and is used for supplying the SiC MOSFET monitoring circuit 20 with the required operating power.
In one embodiment, the gate driving power supply is a linear regulator. In this embodiment, a linear regulator is used as the gate driving power source. The SiC MOSFET monitoring circuit 20 is connected to the sampling module 210, and the linear regulator generates a PWM wave to supply power to the SiC MOSFET monitoring circuit 20.
In one embodiment, the SiC MOSFET monitoring circuit further includes an alarm module, connected to the analysis module, for receiving the aging early warning signal and outputting alarm information. When the comparator judges that the SiCMOSFET device 10 has the aging failure condition according to the comparison result, the comparator outputs the aging early warning signal to the alarm module. The alarm module can give out corresponding alarm information according to the received aging early warning signal. The alarm module can be set into, for example, an audible and visual alarm module according to the requirements in practical application, and the SiC MOSFET device 10 which is aged and failed is positioned by using an acoustic signal and an optical signal as alarm signals, so that a worker can quickly acquire the position of the SiC MOSFET device 10 and perform subsequent maintenance operation.
Fig. 3 is a flowchart of a SiC MOSFET monitoring method according to an embodiment of the present invention, wherein the method includes the following steps S100 to S300.
S100: and carrying out an aging test on the SiC MOSFET, and determining the grid leakage current as a degradation sensitive parameter of the SiC MOSFET for state monitoring.
S200: and sampling the electric signal of the SiC MOSFET grid, and comparing the acquisition result with a preset threshold value.
S300: and if the electric signal of the SiC MOSFET grid is larger than a preset threshold value, judging that the device is aged and invalid, and outputting an aging early warning signal of the device.
Specifically, the SiC MOSFET monitoring method first performs an aging test on the SiC MOSFET device 10 to determine degradation-sensitive parameters of the SiC MOSFET device 10, i.e., parameters that change significantly when the SiC MOSFET device 10 fails due to aging. When the aging failure condition of the SiC MOSFET device 10 is monitored, whether the SiC MOSFET device 10 is aged or failed is determined by collecting the selected degradation sensitive parameters and according to the change of the degradation sensitive parameters. In this embodiment, the leakage current I on the gate of the SiC MOSFET device 10 is setgssThe condition monitoring is performed as a degradation sensitive parameter.
Selecting a suitable sampling resistor to connect with the gate of the SiC MOSFET device 10 for causing the gate leakage current to flow from the sampling resistor RGIs conducted upwards, and uses a differential amplifier to couple the sampling resistor RGThe resulting voltage drop is sensed and amplified. And then comparing the amplified differential voltage with a preset threshold value, and judging whether the SiC MOSFET device 10 has an aging failure condition. For the SiC MOSFET device 10 to be in good device condition, the leakage current at the gate is very small, approximately zero, so the differential amplifier is at the sampling resistance RGThe sensed voltage drop is also very small. If the collected voltage drop is less than a preset threshold value, the voltage drop is indicatedThe device state of the SiC MOSFET device 10 is good, and the comparator outputs logic 0 to indicate that the SiC MOSFET device 10 is normal. When the SiC MOSFET device 10 suffers burn-in failure, the leakage current on its gate can reach a range of several mA. Therefore, when the collected voltage drop is larger than a preset threshold value, it indicates that the SiC MOSFET device 10 has an aging failure problem, and the comparator outputs a logic 1 to send a device aging warning signal as a warning, which indicates that the system may malfunction or affect the normal operation of the whole apparatus or system due to the aging failure of the SiC MOSFET device 10 in the near future. The staff can evaluate the aging degree of the module and predict the service life of the device according to the monitoring and analyzing result, thereby taking relevant maintenance measures such as replacing the device.
In one embodiment, the preset threshold is determined according to an aging threshold of the SiC MOSFET. In practical applications, when different device specifications of the SiC MOSFET device 10 and different selected degradation sensitive parameters are used, and when the SiC MOSFET monitoring method is used for comparing and judging the sampled data of the SiC MOSFET device 10, the selected judgment values are different, and the preset threshold is determined to be related to the aging threshold of the SiC MOSFET device 10.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A SiC MOSFET monitoring circuit, comprising:
the sampling module is used for collecting the electric signal of the SiC MOSFET grid;
and the analysis module is connected with the sampling module and used for comparing the electric signal with a preset threshold value and judging whether the SiC MOSFET is aged or invalid according to a comparison result.
2. The SiC MOSFET monitoring circuit of claim 1, wherein the sampling module comprises:
the sampling resistor is connected with the grid electrode of the SiC MOSFET and used for collecting the grid electrode leakage current of the SiC MOSFET;
and the differential amplifier is connected with the sampling resistor and used for sensing and amplifying the voltage drop on the sampling resistor.
3. The SiC MOSFET monitoring circuit of claim 2, wherein the bandwidth of the differential amplifier is not less than twice the switching frequency of the SiC MOSFET.
4. The SiC MOSFET monitoring circuit of claim 2, wherein the input bias current of the differential amplifier is at least one order of magnitude less than the gate leakage current of the SiC MOSFET; the input offset voltage of the differential amplifier is at least one order of magnitude less than the minimum threshold voltage across the sampling resistor.
5. The SiC MOSFET monitoring circuit of claim 2, wherein the analysis module comprises:
and the comparator is connected with the differential amplifier and used for comparing the electric signal with a preset threshold value and judging whether the SiC MOSFET is aged or invalid according to a comparison result.
6. The SiC MOSFET monitoring circuit of claim 5, wherein the comparator outputs a device aging warning signal when the electrical signal at the gate of the SiMOSFET is greater than a predetermined threshold.
7. The SiC MOSFET monitoring circuit of claim 1, further comprising:
and the grid driving power supply is connected with the sampling module and used for supplying power to the SiC MOSFET monitoring circuit.
8. The SiC MOSFET monitoring circuit of claim 7, wherein the gate drive power supply is a linear regulator.
9. A SiC MOSFET monitoring method, comprising:
performing an aging test on the SiC MOSFET, and determining the grid leakage current as a degradation sensitive parameter of the SiC MOSFET for state monitoring;
sampling the electric signal of the SiC MOSFET grid, and comparing the acquisition result with a preset threshold value;
and if the electric signal of the SiC MOSFET grid is larger than a preset threshold value, judging that the device is aged and invalid, and outputting an aging early warning signal of the device.
10. The SiC MOSFET monitoring method of claim 9, wherein the predetermined threshold is determined based on an aging threshold of the SiC MOSFET.
CN202010483973.0A 2020-06-01 2020-06-01 SiC MOSFET monitoring circuit and monitoring method Pending CN111624458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010483973.0A CN111624458A (en) 2020-06-01 2020-06-01 SiC MOSFET monitoring circuit and monitoring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010483973.0A CN111624458A (en) 2020-06-01 2020-06-01 SiC MOSFET monitoring circuit and monitoring method

Publications (1)

Publication Number Publication Date
CN111624458A true CN111624458A (en) 2020-09-04

Family

ID=72272541

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010483973.0A Pending CN111624458A (en) 2020-06-01 2020-06-01 SiC MOSFET monitoring circuit and monitoring method

Country Status (1)

Country Link
CN (1) CN111624458A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113189468A (en) * 2021-05-13 2021-07-30 中国工程物理研究院电子工程研究所 Health state on-line monitoring circuit and system of power device
CN113933677A (en) * 2021-10-26 2022-01-14 重庆大学 SiC MOSFET device grid electrode aging monitoring circuit and online monitoring method
CN114487757A (en) * 2022-04-14 2022-05-13 长沙丹芬瑞电气技术有限公司 Detection apparatus for field effect transistor health status and power supply
CN115754656A (en) * 2022-11-23 2023-03-07 东莞光亚智能科技有限公司 Field effect tube damage detection system
JP7461665B2 (en) 2022-03-18 2024-04-04 株式会社ケミトックス Reliability test equipment for semiconductor devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113189468A (en) * 2021-05-13 2021-07-30 中国工程物理研究院电子工程研究所 Health state on-line monitoring circuit and system of power device
CN113933677A (en) * 2021-10-26 2022-01-14 重庆大学 SiC MOSFET device grid electrode aging monitoring circuit and online monitoring method
CN113933677B (en) * 2021-10-26 2024-04-19 重庆大学 SiC MOSFET device grid aging monitoring circuit and online monitoring method
JP7461665B2 (en) 2022-03-18 2024-04-04 株式会社ケミトックス Reliability test equipment for semiconductor devices
CN114487757A (en) * 2022-04-14 2022-05-13 长沙丹芬瑞电气技术有限公司 Detection apparatus for field effect transistor health status and power supply
CN115754656A (en) * 2022-11-23 2023-03-07 东莞光亚智能科技有限公司 Field effect tube damage detection system

Similar Documents

Publication Publication Date Title
CN111624458A (en) SiC MOSFET monitoring circuit and monitoring method
CN107315138B (en) Fault prediction and health processing method and test system of power MOSFET
CN105699803B (en) A kind of automobile electrical fault detection system
KR102637200B1 (en) Sensor defect detection using paired sample correlation
US9921270B2 (en) Battery system with cell voltage detecting units
CN101201370A (en) Fault diagnosis system adopting circuit information amalgamation and implementing method thereof
CN109507487A (en) Thyristor triggering impulse signal deteching circuit
KR101918253B1 (en) Self-diagnosis module and self-diagnosis method of plasma power supply
US11733279B2 (en) Circuit and method for detecting insulation resistance
CN114740297A (en) Power device testing method and system
CN212586494U (en) SiC MOSFET monitoring circuit
CN109444590A (en) MEMS device detection circuit and method
CN109031088A (en) A kind of circuit board multichannel current test method and its system
CN105571795B (en) A kind of GIS principal faults diagnostic system and method
CN106199373A (en) Electronic equipment intelligent failure diagnosis method and device
KR20210141211A (en) Apparatus and method for diagnosing battery
US11011335B2 (en) In or relating to circuit interruption devices
US20140152338A1 (en) Electronic device reliability measurement system and method
CN109709380B (en) Method and device for detecting operating characteristics of accelerator
US11604230B2 (en) Electric circuit and diagnostic method for an electric load
CN110262611B (en) Circuit for providing stress test voltage
KR20080091876A (en) Protection methord of relay means trouble
CN102062847B (en) The detection method of semiconductor parameter measuring system
CN115902567B (en) High-voltage transistor test circuit and system
CN113759300B (en) Performance test method and device of battery management unit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination