CN113933677A - SiC MOSFET device grid electrode aging monitoring circuit and online monitoring method - Google Patents
SiC MOSFET device grid electrode aging monitoring circuit and online monitoring method Download PDFInfo
- Publication number
- CN113933677A CN113933677A CN202111248678.8A CN202111248678A CN113933677A CN 113933677 A CN113933677 A CN 113933677A CN 202111248678 A CN202111248678 A CN 202111248678A CN 113933677 A CN113933677 A CN 113933677A
- Authority
- CN
- China
- Prior art keywords
- monitoring
- gate
- aging
- circuit
- sic mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012544 monitoring process Methods 0.000 title claims abstract description 177
- 230000032683 aging Effects 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000005070 sampling Methods 0.000 claims abstract description 9
- 238000012806 monitoring device Methods 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 11
- 230000036541 health Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 5
- 238000002474 experimental method Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000011156 evaluation Methods 0.000 claims description 2
- 230000035882 stress Effects 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims 5
- 238000006731 degradation reaction Methods 0.000 claims 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 63
- 229910010271 silicon carbide Inorganic materials 0.000 description 61
- 238000010586 diagram Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention discloses a SiCMOS MOSFET grid electrode aging monitoring circuit and an online monitoring method, wherein the monitoring circuit comprises a conventional driving circuit, a monitoring driving circuit, a sampling and logic operation circuit and a control unit; the monitoring method comprises the following steps: when the device to be tested normally works, the switching-on and switching-off of the device are controlled by the conventional drive; when the device to be tested is in a turn-off state and gate aging monitoring is implemented, the circuit is switched from conventional driving to monitoring driving to charge the gate; when the grid voltage reaches a set value, the logic operation circuit turns off the monitoring drive and generates a charging time signal to be transmitted to the control unit, the control unit captures the duration of the effective level of the charging time signal, and the charging time is used as a characteristic quantity of grid aging and used for monitoring the aging state of the grid. The invention can not influence the normal work of devices and devices, can realize the online monitoring of the grid aging, solves the problem that most grid aging monitoring methods are difficult to implement online, and effectively avoids economic loss caused by shutdown monitoring.
Description
Technical Field
The invention relates to the technical field of power semiconductor device monitoring, in particular to a silicon carbide (SiC) MOSFET device monitoring circuit and an online monitoring method.
Background
With the rapid development of semiconductor technology and power electronic technology, semiconductor power devices are widely used in various fields such as new energy power generation, rail transit, consumer electronics and the like. The development trends of power electronic technology such as high frequency and high power density have made higher demands on semiconductor power devices, and third-generation power semiconductor devices such as SiC have also been developed rapidly. The silicon carbide (SiC) MOSFET has the advantages of high temperature resistance, high pressure resistance, low loss, high switching speed and the like, thereby having great application prospect and industrial value. However, the reliability of the gate of the SiC MOSFET is problematic, and the gate may be aged or even fail when stressed during long-term operation, which seriously affects the reliability and stability of the power electronic system.
The grid health level of the SiC MOSFET device is related to the parasitic parameters of the SiC MOSFET device, so that the aging state of the device is judged by monitoring the change of the parasitic parameters of the SiC MOSFET device, and a reasonable maintenance plan of the power electronic device can be made. However, the prior art is complex in the method for monitoring the gate state of the SiC MOSFET, high in cost, and needs to be shut down or the SiC MOSFET device needs to be disassembled; and the shutdown maintenance can cause huge economic loss, and the disassembly work can also cause certain damage to the SiC MOSFET device, thereby influencing the monitoring precision.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide the gate aging circuit of the SiC MOSFET device and the online monitoring method thereof, which can accurately monitor the gate aging state of the SiC MOSFET device without shutdown and disassembly, thereby accurately judging the gate aging state of the SiC MOSFET device, effectively avoiding economic loss caused by shutdown monitoring and damage caused by disassembly of the SiC MOSFET device to influence a measurement result, reducing the operation and maintenance cost of SiC MOSFET application equipment (such as a converter and the like), and improving the reliability of the equipment.
The invention adopts the following technical scheme: a gate aging monitoring circuit of a SiC MOSFET device is characterized by comprising a conventional driving circuit, a monitoring driving circuit, a sampling circuit and a logic operation circuit, wherein the sampling circuit and the logic operation circuit form a comprehensive monitoring driving circuit; the controller sends out a control instruction to realize normal driving and gate aging monitoring of the SiC MOSFET device;
the SiC MOSFET integrated monitoring drive circuit is provided with four signal input ports and an output port, wherein the four signal input ports are working signal ports respectivelyS nMonitoring signal portS cDriving the switching signal portS pAnd charging time signal portS dOne output port is a driving port and is connected to the grid electrode of the SiC MOSFET device; the controller is connected with four input ports of the comprehensive monitoring driving circuit, and an output port of the comprehensive monitoring driving circuit outputs driving signals to the SiC MOSFET device.
Further, the conventional driving circuit and the monitoring driving circuit are different in a turn-off voltage value and a turn-on driving resistance value; the turn-off voltage value of the conventional driving circuit is determined by the recommended value of a monitoring device data manual, and the turn-on driving resistance value is determined according to dynamic indexes such as switching speed and the like, and is generally several omega-dozens of omega; the turn-off voltage value of the monitoring driving circuit is determined by the gate aging sensitive interval of the monitoring device, meanwhile, the maximum negative voltage value allowed by a data manual cannot be exceeded, and the turn-on driving resistance value of the monitoring driving circuit needs to be designed according to the input capacitance and the expected charging time value of the specific monitoring device, and is generally in the k omega level.
The controller is provided with a pulse time capture module, can select a digital signal controller or similar high-precision products of a TI company model TMS320F28035, is provided with a high-precision pulse width capture module (HRCAP) with the precision of 300ps, and can accurately measure a charging time signalS dPulse width time of (d).
The total time of the monitoring process is less than the turn-off time of the device, so that the normal work of the monitoring SiC MOSFET device is ensured, and the charging time of the grid electrode can be adjusted by monitoring the turn-on driving resistor of the driving circuit.
Meanwhile, the invention also provides an online monitoring method for the aging of the SiC MOSFET grid, which adopts the aging monitoring circuit of the SiC MOSFET grid, and the controller sends out a control instruction to realize the normal driving and grid aging monitoring of the SiC MOSFET device; four signal input ports of the comprehensive monitoring driving circuit are connected with the controller, and an output port of the comprehensive monitoring driving circuit is connected to a grid electrode of the SiC MOSFET device to be tested; the monitoring method comprises the following steps:
when the device to be tested normally works, the switching-on and switching-off of the device are controlled by the conventional drive;
when the device to be tested is in a turn-off state and gate aging monitoring is implemented, the circuit is switched from conventional driving to monitoring driving to charge the gate; when the grid voltage reaches a set value, the logic operation circuit turns off the monitoring drive and generates a charging time signal to be transmitted to the control unit, the control unit captures the duration (defined as charging time) of the effective level of the charging time signal, and the charging time is used as a characteristic quantity of grid aging and can be used for monitoring the aging state of the grid.
Further, the controller inputs a conventional driving signal to the driving circuit, and the conventional driving circuit works at the moment to control and monitor the normal work of the SiC MOSFET device;
when the monitoring SiC MOSFET device is in a turn-off state, the controller inputs a monitoring driving signal to the driving circuit, the monitoring driving circuit works at the moment, and the turn-off voltage of the monitoring device is adjusted to the monitoring voltageV EECharging the grid electrode of the device to continuously increase the grid electrode voltage; when the gate voltage reaches the set voltageV refThe logic operation circuit sends a turn-off signal to the monitoring drive and generates a grid charging time signalS dAnd fed back to the controller;
the controller captures the charging time signal, measures the duration time (defined as charging time) of the effective level, and can judge the gate aging state of the SiC MOSFET device to be tested according to the charging time value. The specific evaluation method is as follows:
the gate aging of the SiC MOSFET device can be simulated by a high-temperature gate bias accelerated aging test, and the gate aging of the SiC MOSFET device to be tested is accelerated by applying gate stress and thermal stress to the SiC MOSFET device to be tested;
before the test is started, putting a device to be tested into a comprehensive monitoring driving circuit to measure a charging time value of a grid under a healthy state as a reference value; in the accelerated aging test process, aging is stopped at intervals, a device to be tested is placed in a comprehensive monitoring driving circuit, and the charging time of the device after aging is measured; when obvious leakage current appears on the grid electrode of the SiC MOSFET device to be testedI gssTime (gate healthy state)I gssAt nA level, when the grid is severely aged or failsI gssThe mA level is higher), the grid of the device is considered to be seriously aged and close to failure, the accelerated aging test is stopped at the moment, and the charging time value measured at the last time before the grid of the device fails is used as a grid failure threshold value; comparing the charging time reference value with the failure threshold value, and carrying out interval subdivision to obtain the charging time range of the SiC MOSFET device grid under different health levels;
when the SiC MOSFET device to be tested is used in an actual device, firstly, measuring the charging time of a grid in a healthy state as a reference; and in the running process of the device, the charging time is regularly measured according to the requirement and is compared with the reference value and the failure threshold value, so that the grid health state of the SiC MOSFET device is judged.
In the invention, the total time of the monitoring process is less than the turn-off time of the device, so that the normal work of the SiC MOSFET device is ensured, and the charging time of the grid can be adjusted by the turn-on driving resistor of the monitoring driving circuit.
Further, the voltage is monitoredV EEAnd a set voltageV refThe gate aging sensitive voltage interval of the monitoring device is determined as follows:
monitoring the SiC MOSFET device to be tested in different aging states through a grid accelerated aging experimentC iss-V gsCharacteristic curves (drain plus high voltage, gate plus negative voltage); according toC iss-V gsDetermining aging sensitive voltage interval according to change conditions of the characteristic curve before and after aging, and combining a grid negative pressure allowable range given by a device manufacturerAnd determining a voltage interval during monitoring. The smaller value of the aging sensitive voltage interval isV EEThe larger value is the set voltageV ref。
The circuit and method of the present invention can be applied in-line to a variety of devices including SiC MOSFET devices.
Compared with the prior art, the invention has the following beneficial effects:
1. the gate aging monitoring circuit of the SiC MOSFET device is complete in function and simple in structure; the gate driver has two functions of aging monitoring and conventional driving, and can be directly used as a gate driver; the monitoring circuit can extract aging characteristic quantity in the turn-off process of the device and carry out gate aging monitoring without influencing the normal operation of the device, thereby realizing on-line monitoring.
2. The monitoring circuit of the invention has ingenious conception and reasonable design, the monitoring result is slightly influenced by the coupling of other physical quantities, and the invention has three specific points: 1) the aging characteristic quantity (namely the charging time) is insensitive to temperature change, so that the monitoring result is influenced little by the junction temperature fluctuation of the device; 2) because the device is in a turn-off state in the monitoring process, the monitoring result is not influenced by the working current of the device; 3) the aging characteristic is not affected by aging of the device package (such as bond wire peeling, solder layer aging, etc.). Therefore, the provided monitoring circuit can accurately monitor the health state of the grid electrode of the device under the conditions of unknown junction temperature, unknown load working condition and unknown packaging aging state of the device.
2. The online monitoring method for the gate aging of the SiC MOSFET device can accurately monitor the gate aging state of the SiC MOSFET device without shutdown and disassembly, and judge the aging state of the device through the change of parasitic parameters, thereby accurately judging the gate aging state of the SiC MOSFET device, effectively avoiding the economic loss caused by shutdown monitoring and the influence on the measurement result caused by the damage of the disassembled SiC MOSFET device, reducing the operation and maintenance cost of SiC MOSFET application equipment (such as a current transformer and the like), and improving the reliability of the equipment.
Drawings
FIG. 1 is a schematic diagram of a monitoring circuit of the present invention.
FIG. 2 is a SiC MOSFET deviceC iss-V gsCharacteristic measurement schematic diagram.
FIG. 3 is a timing diagram of monitoring signals according to the present invention.
Fig. 4 is an experimental waveform diagram of the present invention applied to a Boost converter.
Fig. 5 is an enlarged view of the waveform of the monitoring stage of fig. 4.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
As shown in FIG. 1, the invention provides a gate aging monitoring circuit of a SiC MOSFET device, which comprises a conventional driving circuit, a monitoring driving circuit, a sampling circuit and a logic operation circuit, wherein the conventional driving circuit, the monitoring driving circuit, the sampling circuit and the logic operation circuit form a comprehensive monitoring driving circuit, and a controller sends out a control instruction to realize normal driving and gate aging monitoring of the SiC MOSFET device. The conventional driving circuit and the monitoring driving circuit are different in the off-voltage value and the on-drive resistance value.
The SiC MOSFET monitoring drive circuit is provided with four signal input ports and one output port, and the three signal input ports are working signal ports respectivelyS nMonitoring signal portS cDriving the switching signal portS pAnd charging time signal portS dOne output port is a drive port; the controller is connected with four input ports of the comprehensive monitoring driving circuit, and an output port of the SiC MOSFET comprehensive monitoring driving circuit outputs driving signals to the SiC MOSFET device.
Referring to fig. 1, the conventional driving circuit is composed of an isolated gate driver and a peripheral power supply circuit, and an input signal of the driverS nThe output end of the driver is connected to one of the input ends of the single-pole double-throw switch; the monitoring drive circuit consists of an isolated gate driver and a peripheral power supply circuit, and the input signal of the driverS dThe output end of the driver is connected to the other input end of the single-pole double-throw switch; off of conventional drive circuit and monitor drive circuitThe power-off voltage values are-4V-0V and-10V-6V respectively, and the switching-on driving resistance values are omega-dozens of omega and k omega respectively; input signal of single-pole double-throw switchS pThe controller is used for selecting a conventional drive or a monitoring drive; the sampling circuit is formed by cascading a buffer, a comparator and a digital isolator, and the output of the isolator is connected to the input end of the logic operation circuit; the logic operation circuit is formed by cascading an SR latch and an AND gate, wherein the input end R of the SR latch is the output of the isolator, and the input end S is a signal sent by the controllerS cThe output end Q is connected to one of the input ends of the AND gate; the other input end of the AND gate is a signal sent by the controllerS cThe output signal of the AND gate isS dAnd the input end of the monitoring driving circuit is connected to the input end of the monitoring driving circuit and is fed back to the controller.
The controller is provided with a pulse time capture module, such as a digital signal controller of TI (China organization) TMS320F28035, and a high-precision pulse width capture module (HRCAP) with the precision of 300ps is carried, so that the charging time signal can be accurately measuredS dPulse width time of (d).
The total monitoring process time of the SiC MOSFET monitoring driving circuit is less than the device turn-off time, so that the normal work of the SiC MOSFET monitoring device is ensured, and the grid charging time can be adjusted through the turn-on driving resistor of the monitoring driving circuit.
The invention also provides a method for monitoring gate aging of the SiC MOSFET by adopting the monitoring circuit, and the monitoring circuit is integrated into the gate drive circuit to realize normal operation and gate aging monitoring of the SiC MOSFET device. The proposed integrated monitoring drive circuit comprises a monitoring module and a drive module, and the monitoring method comprises the following steps:
the controller inputs a conventional driving signal to the driving circuit, and the conventional driving circuit works at the moment to control and monitor the normal work of the SiC MOSFET device;
when the monitoring SiC MOSFET device is in a turn-off state, the controller inputs a monitoring driving signal to the driving circuit, and the monitoring driving circuit works to adjust the turn-off voltage of the monitoring device to the monitoring voltageV EEAnd to the device gridCharging is carried out, so that the grid voltage is continuously increased; when the gate voltage reaches the set voltageV refThe logic operation circuit sends a turn-off signal to the monitoring drive and generates a grid charging time signalS dAnd fed back to the controller.
The controller captures the charging time signal and measures the duration time of the effective level, and the gate aging state of the SiC MOSFET device to be tested can be judged according to the charging time value. The smaller value of the voltage interval isV EEThe larger value is the set voltageV ref. Monitoring voltageV EEAnd a set voltageV refThe gate aging sensitive voltage interval of the monitoring device is determined as follows:
monitoring the SiC MOSFET device to be tested in different aging states through a grid accelerated aging experimentC iss-V gsThe measurement circuit is shown in fig. 2 for the characteristic curves (high voltage applied to the drain and negative voltage applied to the gate). According toC iss-V gsAnd determining an aging sensitive voltage interval according to the change condition of the characteristic curve before and after aging, and determining a voltage interval during monitoring according to a negative voltage allowable range of a grid electrode given by a device manufacturer. When the grid voltage reaches a set value, the logic operation circuit turns off the monitoring drive and generates a charging time signal to be transmitted to the control unit, the control unit captures the duration (defined as charging time) of the effective level of the charging time signal, and the charging time is used as a characteristic quantity of grid aging and can be used for monitoring the aging state of the grid. The monitoring method is carried out in the off state of the SiC MOSFET, so that the normal work of devices and devices can not be influenced, the online monitoring of the grid aging can be realized, the problem that most grid aging monitoring methods are difficult to implement online is solved, and the economic loss caused by shutdown monitoring is effectively avoided.
Referring to fig. 3, a combined timing diagram illustrates the monitoring method:
t 0~t 1stage (2):S nat the high level of the voltage, the voltage is high,S candS pis low. The single-pole double-throw switch is pulled to the conventional drive to control the device to be switched on. Due to the gate voltageV gsGreater than a set voltageV refThe input R of the latch is low, while the other input S is also low, at which time the level of the output signal of the latch is unknown. But because ofS cIs low, so that the AND gate outputs a signalS dIs low.
t 1~t 2Stage (2):S n，S candS pare all low. The device under test is turned off by normal driving. At this stage, the gate voltageV gsIs still greater than the set voltageV refTherefore, the latch input terminal R is low, and the level of the latch output signal Q is unknown. Due to the fact thatS cStill at a low level of the voltage level,S dalso low. The purpose of this stage is to ensure a stable turn-off of the device under test.
t 2~t 3Stage (2):S nandS cat the low level of the voltage, the voltage is low,S pand goes high. The single-pole double-throw switch is driven to monitor the direction of the switch, and thenV gsDown to the monitoring voltageV EE. Due to the fact thatV gsIs less thanV EEThe latch input R is high. Since the other input S of the latch is low, the latch output signal Q is set high in preparation for the next stage of monitoring. And gate outputS dThe level remains low.
t 3~t 4Stage (2):S nis kept at a low level and is,S cand goes high. Due to the fact thatS cThe output Q of the AND latch is high level, and the output end of the AND gateS dChanging low level to high level, controlling monitoring drive to turn on the device to be tested, and controlling grid voltageV gsAnd starts to rise. When in useV gsTo a set voltageV refThen, the comparator operates, the latch input terminal R changes from high level to low level, and the output terminal Q is set from high level to low level.S dAutomatically change from high level to low level, controlAnd the monitoring drive is used for switching off the device to be tested.V gsDown toV EEThe latch input R changes from low to high. Due to the fact thatS cThe high is maintained and the latch output Q remains low. SignalS dFed back into the controller. Capture module measurement of controllerS dThe duration of the high level is the gate charging time.
t 4~t 5Stage (2): this stage is used as a monitor time margin, and the state of the signal is the same as that of the previous stage.
t 5~t 6Stage (2):S n，S candS pare all low. And the single-pole double-throw switch is driven to the conventional direction, and the device to be tested keeps a turn-off state to wait for the next operation period. Grid voltageV gsReturning to the normal off voltage.
Referring to fig. 4, the experimental waveform diagram of the present invention applied to the Boost converter shows that the integrated monitoring driving circuit can control the normal operation of the SiC MOSFET device in the actual device; meanwhile, when the device is in a turn-off state, the controller sends a monitoring instruction to control the monitoring driving circuit to monitor the grid state of the SiC MOSFET.
Fig. 5 is an enlarged waveform diagram of the monitoring stage in fig. 4, and it can be seen from the diagram that when the gate state is monitored, the gate voltage is changed from the conventional driving turn-off voltage (-4V) to the monitoring driving turn-off voltage (-6V), and the gate of the device starts to be charged after the voltage is stabilized, because the on-resistance of the monitoring driving circuit is large, the gate charging speed is slow; when the gate voltage reaches a set valueV refWhen (-5V), the logic operation circuit acts to automatically close the monitoring drive circuit and convert it into a conventional drive circuit, and at the same time, outputs a charging time signal to feed back to the controller. After the monitoring process is finished, the device is still in an off state, so that the normal work of the device cannot be influenced.
The controller captures the pulse width of the charging time signal to obtain a charging time value, and the health state of the grid of the device is judged by combining a failure threshold value obtained by a grid accelerated aging experiment and a reference value measured in a health state.
In the invention, the total time of the monitoring process is less than the turn-off time of the device, so that the normal work of the SiC MOSFET device is ensured, and the charging time of the grid can be adjusted by monitoring the turn-on driving resistor of the driving circuit. Therefore, the method does not affect the normal operation of the device under test and the equipment.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the technical solutions, and those skilled in the art should understand that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all that should be covered by the claims of the present invention.
Claims (10)
1. A gate aging monitoring circuit of a SiC MOSFET device is characterized by comprising a conventional driving circuit, a monitoring driving circuit, a sampling circuit and a logic operation circuit, wherein the sampling circuit and the logic operation circuit form a comprehensive monitoring driving circuit; the controller sends out a control instruction to realize normal driving and gate aging monitoring of the SiC MOSFET device;
the SiC MOSFET integrated monitoring drive circuit is provided with four signal input ports and an output port, wherein the four signal input ports are working signal ports respectivelyS nMonitoring signal portS cDriving the switching signal portS pAnd charging time signal portS dOne output port is a driving port and is connected to the grid electrode of the SiC MOSFET device; the controller is connected with four input ports of the comprehensive monitoring driving circuit, and an output port of the comprehensive monitoring driving circuit outputs driving signals to the SiC MOSFET device.
2. The SiC MOSFET device gate degradation monitoring circuit of claim 1, wherein the conventional driver circuit comprises an isolated gate driver and a peripheral power supply circuit, and wherein an input signal of the driver is providedS nOutput of the driver from the controllerOne of the input terminals connected to the single-pole double-throw switch; the monitoring drive circuit consists of an isolated gate driver and a peripheral power supply circuit, and the input signal of the driverS dThe output end of the driver is connected to the other input end of the single-pole double-throw switch; the turn-off voltage values of the conventional driving circuit and the monitoring driving circuit are-4V-0V and-10V-6V respectively, and the turn-on driving resistance values are omega-dozens of omega and k omega respectively; input signal of single-pole double-throw switchS pThe controller is used for selecting a conventional drive or a monitoring drive; the sampling circuit is formed by cascading a buffer, a comparator and a digital isolator, and the output of the isolator is connected to the input end of the logic operation circuit; the logic operation circuit is formed by cascading an SR latch and an AND gate, wherein the input end R of the SR latch is the output of the isolator, and the input end S is a signal sent by the controllerS cThe output end Q is connected to one of the input ends of the AND gate; the other input end of the AND gate is a signal sent by the controllerS cThe output signal of the AND gate isS dAnd the input end of the monitoring driving circuit is connected to the input end of the monitoring driving circuit and is fed back to the controller.
3. The SiC MOSFET device gate degradation monitoring circuit of claim 1, wherein the conventional drive circuit and the monitor drive circuit differ in an off voltage value and an on drive resistance value; the turn-off voltage value of the conventional driving circuit is determined by the recommended value of a monitoring device data manual, and the turn-on driving resistance value is determined according to dynamic indexes such as switching speed and the like, and is generally several omega-dozens of omega; the turn-off voltage value of the monitoring driving circuit is determined by the gate aging sensitive interval of the monitoring device, meanwhile, the maximum negative voltage value allowed by a data manual cannot be exceeded, and the turn-on driving resistance value of the monitoring driving circuit needs to be designed according to the input capacitance and the expected charging time value of the specific monitoring device, and is generally in the k omega level.
4. The SiC MOSFET device gate degradation monitoring circuit of claim 1, wherein the controller has a pulse time capture module selected as model TIThe TMS320F28035 digital signal controller is provided with a high-precision pulse width capture module (HRCAP) with the precision of 300ps, and can accurately measure a charging time signalS dPulse width time of (d).
5. The SiC MOSFET device gate degradation monitoring circuit of claim 1, wherein the total monitoring process time is less than the device turn-off time to ensure proper operation of the SiC MOSFET device, and the gate charging time is adjustable by monitoring the on drive resistance of the drive circuit.
6. An online monitoring method for gate aging of SiC MOSFET is characterized in that a gate aging monitoring circuit of any one of SiC MOSFET devices from 1 to 5 is adopted; the controller sends out a control instruction to realize normal driving and gate aging monitoring of the SiC MOSFET device; four signal input ports of the comprehensive monitoring driving circuit are connected with the controller, and an output port of the comprehensive monitoring driving circuit is connected to a grid electrode of the SiC MOSFET device to be tested; the monitoring method comprises the following steps:
when the device to be tested normally works, the switching-on and switching-off of the device are controlled by the conventional drive;
when the device to be tested is in a turn-off state and gate aging monitoring is implemented, the circuit is switched from conventional driving to monitoring driving to charge the gate; when the grid voltage reaches a set value, the logic operation circuit turns off the monitoring drive and generates a charging time signal to be transmitted to the control unit, the control unit captures the duration (defined as charging time) of the effective level of the charging time signal, and the charging time is used as a characteristic quantity of grid aging and can be used for monitoring the aging state of the grid.
7. The SiC MOSFET gate degradation on-line monitoring method of claim 6,
the controller inputs a conventional driving signal to the driving circuit, and the conventional driving circuit works at the moment to control and monitor the normal work of the SiC MOSFET device;
when the monitoring SiC MOSFET device is in an off state, the controller outputs the monitoring SiC MOSFET device to the driving circuitEntering a monitoring driving signal, wherein the monitoring driving circuit works to adjust the turn-off voltage of the monitoring device to the monitoring voltageV EECharging the grid electrode of the device to continuously increase the grid electrode voltage; when the gate voltage reaches the set voltageV refThe logic operation circuit sends a turn-off signal to the monitoring drive and generates a grid charging time signalS dAnd fed back to the controller;
the controller captures a charging time signal, measures the duration time (defined as charging time) of an effective level, and can judge the gate aging state of the SiC MOSFET device to be tested according to the charging time value;
the specific evaluation method is as follows:
the gate aging of the SiC MOSFET device can be simulated by a high-temperature gate bias accelerated aging test, and the gate aging of the SiC MOSFET device to be tested is accelerated by applying gate stress and thermal stress to the SiC MOSFET device to be tested;
before the test is started, putting a device to be tested into a comprehensive monitoring driving circuit to measure a charging time value of a grid under a healthy state as a reference value; in the accelerated aging test process, aging is stopped at intervals, a device to be tested is placed in a comprehensive monitoring driving circuit, and the charging time of the device after aging is measured; when obvious leakage current appears on the grid electrode of the SiC MOSFET device to be testedI gssTime (gate healthy state)I gssAt nA level, when the grid is severely aged or failsI gssThe mA level is higher), the grid of the device is considered to be seriously aged and close to failure, the accelerated aging test is stopped at the moment, and the charging time value measured at the last time before the grid of the device fails is used as a grid failure threshold value; comparing the charging time reference value with the failure threshold value, and carrying out interval subdivision to obtain the charging time range of the SiC MOSFET device grid under different health levels;
when the SiC MOSFET device to be tested is used in an actual device, firstly, measuring the charging time of a grid in a healthy state as a reference; and in the running process of the device, the charging time is regularly measured according to the requirement and is compared with the reference value and the failure threshold value, so that the grid health state of the SiC MOSFET device is judged.
8. The SiC MOSFET gate aging on-line monitoring method of claim 6, wherein: the total time of the monitoring process is less than the turn-off time of the device, so that the normal work of the monitoring SiC MOSFET device is ensured, and the charging time of the grid electrode can be adjusted by monitoring the turn-on driving resistor of the driving circuit.
9. The SiC MOSFET gate aging on-line monitoring method of claim 6, wherein: monitoring voltageV EEAnd a set voltageV refThe gate aging sensitive voltage interval of the monitoring device is determined as follows:
monitoring the SiC MOSFET device to be tested in different aging states through a grid accelerated aging experimentC iss-V gsCharacteristic curves (drain plus high voltage, gate plus negative voltage); according toC iss-V gsDetermining an aging sensitive voltage interval according to the change condition of the characteristic curve before and after aging, determining a voltage interval during monitoring by combining a negative voltage allowable range of a grid electrode given by a device manufacturer, wherein the smaller value of the aging sensitive voltage interval isV EEThe larger value is the set voltageV ref。
10. The SiC MOSFET gate aging on-line monitoring method of claim 6, wherein: the method can be applied in-line to a variety of devices including SiC MOSFET devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111248678.8A CN113933677B (en) | 2021-10-26 | 2021-10-26 | SiC MOSFET device grid aging monitoring circuit and online monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111248678.8A CN113933677B (en) | 2021-10-26 | 2021-10-26 | SiC MOSFET device grid aging monitoring circuit and online monitoring method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113933677A true CN113933677A (en) | 2022-01-14 |
| CN113933677B CN113933677B (en) | 2024-04-19 |
Family
ID=79284234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111248678.8A Active CN113933677B (en) | 2021-10-26 | 2021-10-26 | SiC MOSFET device grid aging monitoring circuit and online monitoring method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113933677B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116203370A (en) * | 2023-01-05 | 2023-06-02 | 重庆大学 | Threshold voltage stability test method and test equipment for MOS semiconductor device |
| CN116317480A (en) * | 2023-03-28 | 2023-06-23 | 重庆大学 | Gate drive circuit for improving overload of power device by reducing gate resistance |
| CN116436446A (en) * | 2023-06-12 | 2023-07-14 | 深圳市赛元微电子股份有限公司 | Integrated circuit logic failure monitoring circuit and isolation circuit |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4983830A (en) * | 1989-06-29 | 1991-01-08 | Seiko Instruments Inc. | Focused ion beam apparatus having charged particle energy filter |
| JPH10228773A (en) * | 1997-02-14 | 1998-08-25 | Hitachi Ltd | Dynamic ram |
| US20050280403A1 (en) * | 2004-06-22 | 2005-12-22 | Nobuhiro Sato | MOSFET drive circuit, programmable power supply and semiconductor test apparatus |
| US20070052646A1 (en) * | 2005-09-07 | 2007-03-08 | Mitsubishi Electric Corporation | Display device |
| US20080186049A1 (en) * | 2007-02-02 | 2008-08-07 | Commissariat A L'energie Atomique | Process and circuit for improving the life duration of field-effect transistors |
| US20140079429A1 (en) * | 2012-09-19 | 2014-03-20 | Brother Kogyo Kabushiki Kaisha | Image forming apparatus |
| CN108627753A (en) * | 2018-05-11 | 2018-10-09 | 西安交通大学 | A kind of IGBT on-line condition monitorings method and measuring system based on Miller platform time delay |
| CN108768367A (en) * | 2018-06-07 | 2018-11-06 | 重庆大学 | SiC MOSFET driving circuits based on gate boost |
| CN111624458A (en) * | 2020-06-01 | 2020-09-04 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | SiC MOSFET monitoring circuit and monitoring method |
| CN214280911U (en) * | 2020-12-11 | 2021-09-24 | 深圳市杉川机器人有限公司 | Overcurrent protection circuit, fan and cleaning equipment |
| CN113541461A (en) * | 2021-08-23 | 2021-10-22 | 华北电力大学 | Grid inductance matching method for restraining voltage overshoot of silicon carbide MOSFET |
-
2021
- 2021-10-26 CN CN202111248678.8A patent/CN113933677B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4983830A (en) * | 1989-06-29 | 1991-01-08 | Seiko Instruments Inc. | Focused ion beam apparatus having charged particle energy filter |
| JPH10228773A (en) * | 1997-02-14 | 1998-08-25 | Hitachi Ltd | Dynamic ram |
| US20050280403A1 (en) * | 2004-06-22 | 2005-12-22 | Nobuhiro Sato | MOSFET drive circuit, programmable power supply and semiconductor test apparatus |
| US20070052646A1 (en) * | 2005-09-07 | 2007-03-08 | Mitsubishi Electric Corporation | Display device |
| US20080186049A1 (en) * | 2007-02-02 | 2008-08-07 | Commissariat A L'energie Atomique | Process and circuit for improving the life duration of field-effect transistors |
| US20140079429A1 (en) * | 2012-09-19 | 2014-03-20 | Brother Kogyo Kabushiki Kaisha | Image forming apparatus |
| CN108627753A (en) * | 2018-05-11 | 2018-10-09 | 西安交通大学 | A kind of IGBT on-line condition monitorings method and measuring system based on Miller platform time delay |
| CN108768367A (en) * | 2018-06-07 | 2018-11-06 | 重庆大学 | SiC MOSFET driving circuits based on gate boost |
| CN111624458A (en) * | 2020-06-01 | 2020-09-04 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | SiC MOSFET monitoring circuit and monitoring method |
| CN214280911U (en) * | 2020-12-11 | 2021-09-24 | 深圳市杉川机器人有限公司 | Overcurrent protection circuit, fan and cleaning equipment |
| CN113541461A (en) * | 2021-08-23 | 2021-10-22 | 华北电力大学 | Grid inductance matching method for restraining voltage overshoot of silicon carbide MOSFET |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116203370A (en) * | 2023-01-05 | 2023-06-02 | 重庆大学 | Threshold voltage stability test method and test equipment for MOS semiconductor device |
| CN116317480A (en) * | 2023-03-28 | 2023-06-23 | 重庆大学 | Gate drive circuit for improving overload of power device by reducing gate resistance |
| CN116436446A (en) * | 2023-06-12 | 2023-07-14 | 深圳市赛元微电子股份有限公司 | Integrated circuit logic failure monitoring circuit and isolation circuit |
| CN116436446B (en) * | 2023-06-12 | 2023-08-18 | 深圳市赛元微电子股份有限公司 | Integrated circuit logic failure monitoring circuit and isolation circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113933677B (en) | 2024-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113933677B (en) | SiC MOSFET device grid aging monitoring circuit and online monitoring method | |
| CN204116544U (en) | A kind of dipulse proving installation for half-bridge IGBT module | |
| CN111781482B (en) | Method and device for detecting health state of bonding wire of high-power SIC MOSFET module | |
| CN103399270B (en) | A kind of IGBT drive module dipulse proving installation and method | |
| CN109765470B (en) | Method for testing characteristics of power semiconductor device with accurately controllable temperature and current | |
| CN103605072B (en) | A kind of power device dynamic characteristic test circuit with thermoelectricity decoupling function and method of testing thereof | |
| CN107656567B (en) | Driving voltage adjusting device and method for smoothing IGBT junction temperature change | |
| CN113092897A (en) | Temperature fatigue aging comprehensive test device for MMC flexible direct converter valve power module | |
| CN116224007A (en) | Silicon carbide MOSFET bipolar degradation pulse experimental platform and calculation method | |
| CN115291070B (en) | HDRB and HDGB test method and device based on dynamic state | |
| CN115085707B (en) | Silicon carbide MOSFET grid driving circuit and method | |
| CN115993514A (en) | SiC Mosfet threshold voltage monitoring system and method | |
| Huang et al. | IGBT Condition Monitoring Drive Circuit Based on Self-Excited Short-circuit Current | |
| CN106468756A (en) | The test system of reverse recovery time of diode | |
| CN115598485A (en) | Power tube aging test device of direct current solid-state circuit breaker and test method thereof | |
| CN113138329A (en) | Power cycle main circuit suitable for GaN power semiconductor device | |
| CN112684318A (en) | Bootstrap type half-bridge driver common-mode voltage change rate tolerance testing device and method | |
| Wei et al. | A novel assessment method of gate oxide degradation based on IGBT turn-on losses for on-line reliability monitoring | |
| CN220357189U (en) | Online monitoring circuit for source-drain voltage of SiC MOSFET device | |
| CN116203373B (en) | Multifunctional semiconductor field effect transistor test circuit and method | |
| CN116047171B (en) | Characterization method and device for dynamic on-resistance of power semiconductor field effect transistor | |
| Zhang et al. | A junction temperature and package aging decoupling evaluating method for SiC MOSFETs based on the turn-on drain-source current overshoot | |
| Ni et al. | Analysis of current sharing of paralleling SiC MOSFETs in SSPC | |
| CN116316503B (en) | Bridge arm switch tube gate-source voltage spike adjusting device and implementation method | |
| CN117590188A (en) | High-frequency power circulation circuit and control method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |