CN116317480A - Gate drive circuit for improving overload of power device by reducing gate resistance - Google Patents
Gate drive circuit for improving overload of power device by reducing gate resistance Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
Abstract
The invention relates to a grid driving circuit for improving overload of a power device by reducing grid resistance, which comprises a current sensor, a controller, a relay, a driving chip, a pulse generator and an adjustable grid resistance R G A controlled device; the pulse generator is connected with a driving chip, and an on port and an off port of the driving chip are connected with an adjustable grid resistor R G Connecting; the drain electrode of the controlled device is connected with a current sensor, the current sensor is connected with a controller, the grid electrode is connected with a common contact K of a relay, and the relay is opened and closed by a movable contact and is opened and closed by a movable contactContact and adjustable grid resistor R G And the controller is connected with the electromagnet coil of the relay to control the working state of the relay. The invention reduces the resistance of the grid electrode of the controlled device by two modes of stage regulation or continuous regulation so as to improve the switching rate of the controlled device, reduce the switching loss of the controlled device and improve the short-time overload capacity of the controlled device.
Description
Technical Field
The invention relates to the technical field of power devices, in particular to a gate driving circuit for improving overload of a power device by reducing gate resistance.
Background
With the emphasis of energy conservation and environmental protection in various countries in the world, new energy industries including wind power generation, photovoltaic power generation and new energy automobiles have been rapidly developed in recent years. In the utilization of new energy, the power electronic technology capable of efficiently converting various energy sources into high-quality electric energy plays an important role, so that the related application of power electronics is more and more widespread, and the power electronic converter plays a key role in the fields of information communication, household appliances and the like, and has been applied to aspects in real life so far, and the reliability of the power electronic converter is important for the safe and reliable operation of a power electronic system.
In power electronics systems, short-term overload conditions exist. For example: the surge current in the black start mode of the network system is 3 times of the rated current and lasts for 4.4s; in the full-load starting and accelerating climbing stage of the electric automobile, the motor output torque is large in the accelerating climbing stage, and in order to ensure the dynamic performance of the motor, the motor controller is likely to be in a short-time overload state which lasts for 10 seconds or even longer by 1.5 times. If the overload condition is short in duration, the device is affordable. However, when overload occurs, the drain current increases, the conduction loss increases, the junction temperature of the device rapidly increases, thermal breakdown may occur, and the failure risk increases sharply. Therefore, the short-time overload capacity of the power device has important significance for safe and reliable operation of the power electronic system.
Aiming at the short-time overload requirement of a power device, the prior art mainly has two solving directions. Firstly, junction temperature regulation is carried out, and overload tolerance is improved; the short-time overload capacity of the traditional power module is improved by filling the phase change material in the traditional power module. Secondly, the multi-chip layout is analyzed and optimized, and the parallel current sharing capability is improved. The current provides a series small resistance current sharing method, which compensates impedance difference among different branches through series small resistors, has simple realization method and low cost, and only plays a role after the device is completely conducted. Meanwhile, an active driving scheme is also provided to realize parallel current sharing, and the current sharing of the parallel chips is realized by adjusting the delay time of the gate driving signal. And after the active drive detects the difference of the currents among the parallel branches, controlling the delay time of each device in the switching-on process, so that the currents of the parallel devices are regulated and controlled to be as consistent as possible.
If the corresponding regulation and control treatment is not carried out in the short-time overload period, the loss of the device can be increased, the junction temperature is caused to be rapidly increased, and the failure risk is rapidly increased. The method fills the phase change material in the traditional power module, has high process difficulty, and the required phase change material has high cost and high manufacturing cost. The series connection of small resistors can introduce extra loss and reduce the power conversion efficiency. The active drive scheme has high dependence on hardware such as high-precision, low-delay and high-speed current sensors.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the present disclosure and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a grid driving circuit for improving overload of a power device by reducing grid resistance, which solves the problems of the prior art for short-time overload of the power device.
The aim of the invention is achieved by the following technical scheme: a gate drive circuit for increasing overload of power device by reducing gate resistance comprises a current sensor, a controller, a relay,Drive chip, pulse generator and grid resistor R G A controlled device; grid resistance R G Comprising two on-gate resistors R Gon1 And R is Gon2 Two off-gate resistors R Goff1 And R is Goff2 ；
The pulse generator is connected with a driving chip, and an opening port and an opening grid resistor R of the driving chip Gon1 And R is Gon2 The turn-off port of the driving chip is connected with the turn-off grid resistor R Goff1 And R is Goff2 Connecting; the drain electrode of the controlled device is connected with a current sensor, the current sensor is connected with a controller, the grid electrode is connected with common contacts K1 and K2 of a relay, and the common contact K1 is connected with a grid electrode opening resistor R through a normally closed contact which is opened and closed by a movable way Gon1 Through the dynamic closing normally open contact and the opening grid resistor R Gon2 Connected with the common contact K2 through a normally closed contact and a turn-off grid resistor R Goff1 Is connected with the turn-off grid resistor R through a movable normally-open contact Goff2 Connecting; the controller is connected with the relay electromagnet coil and controls the working state of the relay; the current sensor is used for monitoring the current condition of the main loop, the controller analyzes and processes feedback signals of the current sensor, when the load is overloaded for a short time, the controller controls the working state of the relay, the resistance value of the grid resistor is regulated and controlled in stages, the grid resistor connected between the grid of the controlled device and the driving chip is reduced, the switching rate of the power device is improved, the switching loss of the power device is reduced, and the short-time overload capacity of the power device is improved.
The working state comprises a normal working state and an overload regulation and control state;
in normal working state, the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K1 of the relay is attracted to the normally closed contact and the resistance R of the open grid Gon1 Connected with the common contact K2 and attracted at the normally closed contact and the turn-off grid resistor R Goff1 Connected with the controlled device through the on grid resistor R Gon1 Connected to the on-port of the driver chip via an off-gate resistor R Goff1 The switch-off port is connected with the drive chip;
when the normal state is changed into the overload regulation state, the current of the electromagnet coil of the relay is larger than the action value I of the relay op The common contact K1 of the relay is attracted to the normally-open contact and the resistance R of the open grid Gon2 Connected with the common contact K2 and attracted to the movable normally-open contact and the turn-off grid resistor R Goff2 Connected with the controlled device through the on grid resistor R Gon2 Connected to the on-port of the driver chip via an off-gate resistor R Goff2 Is connected with the turn-off port of the driving chip, at this time, the grid resistor R is turned on Gon2 The resistance value of (a) is smaller than the resistance R of the open grid electrode Gon1 Turn-off gate resistor R Goff2 Is smaller than the turn-off gate resistance R Goff1 The grid resistance between the grid of the controlled device and the driving chip is reduced, so that the switching speed of the power device is improved, the switching loss of the power device is reduced, and the short-time overload capacity of the power device is improved.
The working state also comprises a short-time overload non-regulation state which is positioned between the normal working state and the overload regulation state, and the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K1 of the relay is attracted to the normally closed contact and the resistance R of the open grid Gon1 Connected with the common contact K2 and attracted at the normally closed contact and the turn-off grid resistor R Goff1 Connected with the controlled device through the on grid resistor R Gon1 Connected to the on-port of the driver chip via an off-gate resistor R Goff1 Is connected with the turn-off port of the driving chip.
The working state also comprises an overload regulation-free state which is positioned after the overload regulation-free state, and the current of the electromagnet coil of the relay is larger than the return current I of the relay re Is larger than the return current value I of the relay re The common contact K1 of the relay is still attracted to the normally-open contact and the resistance R of the open grid Gon2 The common contact K2 is still attracted to the movable normally-open contact and the turn-off grid resistor R Goff2 Connected with the controlled device through the on grid resistor R Gon2 Connected to the on-port of the driver chip via an off-gate resistor R Goff2 With a driver chipThe port connection is turned off, the short-time overload capacity of the controlled device is improved after the load passes through the overload regulation state, and the switching loss of the controlled device is further reduced after the load passes through the overload regulation state in a short time.
A gate drive circuit for increasing overload of power device by reducing gate resistance comprises a current sensor, a controller, a relay, a drive chip, a pulse generator, and an adjustable gate resistance R G A controlled device;
the pulse generator is connected with a driving chip, and an on port and an off port of the driving chip and an adjustable grid resistor R G Connecting; the drain electrode of the controlled device is connected with a current sensor, the current sensor is connected with a controller, the grid electrode is connected with a common contact K of a relay, and a normally-closed contact and a normally-open contact of the relay are connected with an adjustable grid electrode resistor R G The different output ports are connected; the controller is connected with the electromagnet coil of the relay, controls the working state of the relay and controls the adjustable grid resistor R G A working state; the current sensor is used for monitoring the current condition of the main loop, the controller analyzes and processes the feedback signal of the current sensor, when the load is overloaded for a short time, the controller controls the working state of the relay to enable the controlled device to work in different working states, continuously regulates and controls the resistance value of the grid resistor, and outputs the continuously-changed grid resistor R G Reducing the grid resistance R connected between the grid of the controlled device and the driving chip G The switching speed of the power device is improved, the switching loss of the power device is reduced, and the short-time overload capacity of the power device is improved.
The working state comprises a normal working state and an overload regulation and control state;
in normal working state, the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K of the relay is attracted to the normally closed contact and the adjustable grid resistor R G The gate of the passive device is connected with a gate resistor R with a large fixed value G ；
When the normal state is changed into the overload regulation state, the current of the electromagnet coil of the relay is larger than the action value I of the relay op Relay(s)The common contact K of the electrical appliance is attracted to the movable normally-open contact and the adjustable grid resistor R G At this time, the driving chip is connected to the adjustable grid resistor R of the grid of the controlled device G Gradually reduce, and then improve power device switching rate, reduce power device switching loss, improve power device short-time overload ability.
The working state also comprises a short-time overload non-regulation state which is positioned between the normal working state and the overload regulation state, and the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K of the relay is attracted to the normally closed contact and the adjustable grid resistor R G The gate of the passive device is connected with a gate resistor R with a large fixed value G 。
The working state also comprises an overload regulation-free state which is positioned after the overload regulation-free state, and the current of the electromagnet coil of the relay is larger than the return current I of the relay re The common contact K of the relay is still attracted to the normally-open contact and the adjustable grid resistor R G An adjustable grid resistor R connected with the grid of the controlled device by the driving chip G And the load is continuously reduced, the short-time overload capacity of the controlled device is improved after the load passes through an overload regulation state, and the switching loss of the controlled device is further reduced after the load passes through an overload regulation state without short time.
The invention has the following advantages: the grid driving circuit reduces the grid resistance of the controlled device through reducing the grid resistance and improves the overload of the power device, and reduces the resistance of the grid of the controlled device through two modes of staged regulation or continuous regulation so as to improve the switching rate of the power device, reduce the switching loss of the controlled device and improve the short-time overload capacity of the controlled device.
Drawings
FIG. 1 is a schematic diagram of a grid resistance regulation state when short-time overload occurs;
fig. 2 is a schematic diagram of an MOSFET turn-on process waveform, wherein fig. (a) is a schematic diagram of an turn-on process waveform, and fig. (b) is a schematic diagram of an turn-off process waveform;
FIG. 3 is a schematic diagram of a transient reduced gate resistance modulation waveform, wherein FIG. (a) is a schematic diagram of a staged modulation mode; FIG. b is a schematic diagram of a continuous control mode;
FIG. 4 is a block diagram of a gate drive circuit in a staged regulation mode according to the present invention;
FIG. 5 is a schematic diagram of the controller over-current determination principle;
FIG. 6 is a schematic diagram of signal paths for normal operation and overload unregulated state in a staged mode of regulation;
FIG. 7 is a schematic diagram of overload regulation and no overload regulation status signal paths in a staged regulation mode;
FIG. 8 is a schematic diagram of a gate driving circuit with continuous control according to the present invention;
FIG. 9 is a schematic diagram of signal paths for normal operation and overload unregulated conditions in a continuous mode of regulation;
FIG. 10 is a schematic diagram of overload regulation and no overload regulation signal paths in a continuous regulation mode.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Accordingly, the following detailed description of the embodiments of the present application, provided in connection with the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to be within the scope of the present application. The invention is further described below with reference to the accompanying drawings.
The invention provides a method for temporarily reducing the grid resistance R G In the grid driving scheme, the peak value of the load loop current is monitored in real time, and when the load is overloaded in a short time, the switching process of a power device is quickened, the switching loss is reduced, and the power device is improved by briefly reducing the grid resistanceShort time overload capability of the member. As shown in fig. 1, the regulation process is divided into four phases: the device comprises a normal running state, an overload non-regulation state, an overload regulation state and an overload non-regulation state, and the driving time sequence enables the controlled device to repeatedly and sequentially work in four stage states. The grid resistance of the overload unregulated stage is the same as the normal running state. The shorter the overload unregulated stage duration, the better, the duration of which is optionally determined in practice, and in some special cases the overload unregulated stage can be removed. The overload regulation and control stage and the no-overload regulation and control stage belong to regulation and control stages, and the grid resistance of the regulation and control stage is lower than that of a normal running state. The overload-free regulation phase helps to reduce switching losses, but this phase is not necessary and its duration is optionally determined.
As shown in fig. 2, because MOSFET power consumption p=v DS ×I D ，V DS Is the drain voltage, I D For drain current, at t 2 And t 3 Stage V DS And I D The power consumption is larger than the product and the power loss. t is t 1 Stage I D Almost 0, although V DS But the product is almost 0.t is t 4 Stage V DS Almost 0, although I D But the product will be very small. The power loss during the MOSFET turn-on process mainly occurs at t 2 And t 3 Stage. The same applies to the shutdown process, with the main power loss concentrated at t 7 And t 8 Stage.
According to the invention, when the load is overloaded for a short time, the grid resistance is reduced for a short time, the switching speed of the power device is improved, the switching loss of the power device is reduced, and the overload capacity of the power device for a short time is improved. However, the switching speed is too high, so that the voltage and current change rate of the switching device is greatly improved, great interference is generated, the related problems of electromagnetic compatibility (EMC) are brought, and meanwhile, the motor insulation problem is brought by high dv/dt, so that the switching device needs to be comprehensively combined, and the resistance value of the switching gate is reasonably set. The MOSFET switching loss calculation formula is as follows:
P SW ＝(E on +E off )×f sw
the MOSFET on-loss calculation formula is as follows:
Eon＝V DS ×I D ×(t 2 +t 3 )
the MOSFET turn-off loss calculation formula is as follows:
E off ＝V DS ×I D ×(t 7 +t 8 )
p in the formula SW For MOSFET switching losses, E on E is the turn-on loss off F for turn-off loss sw For switching frequency, I D Is the drain current, V DSon Is the drain voltage in the on state, V DS Is the drain voltage, V GSP For Miller plateau voltage, V TH Is a threshold voltage, R Gon To turn on the gate resistance R Goff To turn off the gate resistance, R on Is the internal series connection on-resistance of PWM gate driver, R off C is a series turn-off resistor in the PWM gate driver rss For MOSFET reverse transmission capacitance, C iss For MOSFET input capacitance, R DSon Is an on-resistance. The above formula shows that: reduced on gate resistance, t 2 And t 3 The turn-on loss Eon is reduced. Reduced off gate resistance, t 7 And t 8 The off loss Eoff decreases. In general, the gate resistance is reduced, the switching rate is increased, and the switching loss P SW And (3) reducing. Similarly, for an IGBT, if the gate resistance is reducedThe switching speed is increased, and the switching loss is reduced.
As shown in FIG. 3, I nom Is the nominal current of the device, I D Is the actual current, R G Is the gate resistance, I D /I nom Is the ratio of the actual working current of the load to the nominal current of the device, and the larger the ratio is, the more serious the overload is. In the normal working state, the actual current I D Equal to the nominal current of the device I nom ，I D /I nom The controller controls the actual resistance of the adjustable grid resistor to be R G1 . When overload occurs, the load current increases beyond the normal range, I D /I nom >1, the driving circuit enters an overload non-regulation state, and the actual resistance value of the adjustable grid resistor is R G1 . Because the grid resistance is the same as the normal running state in the stage, the loss of the power device is increased without corresponding regulation and control treatment, and the duration is not suitable to be too long and should be controlled within a few milliseconds. In overload regulation state, the load current is greater than the nominal current of the device, I D /I nom >And 1, controlling the adjustable grid resistor to perform overload regulation and control by the controller. As shown in FIG. 3, when the step-by-step regulation mode is adopted, the waveform of the adjustable grid resistance is shown in FIG. 3 (a), and the actual resistance is R G2 The waveform of the adjustable gate resistance when the continuous regulation mode is adopted is shown in fig. 3 (b). When no overload regulation state exists, the load current is in a normal working range, I D /I nom =1, at which time the actuator output is the same as the overload regulation phase. This phase helps to reduce conduction losses, but is not necessary and its duration is optionally determined.
Example 1
In this embodiment, the step-by-step regulation mode shown in fig. 3 (a), two different resistance values exist in the gate resistance, and the controller in the gate driving circuit adopts an overcurrent relay. The overcurrent relay includes a controller portion and a relay portion. The gate driving circuit structure of the staged regulation mode is shown in figure 4, and comprises a current sensor, a controller, a double-pole double-throw relay, a driving chip, a pulse generator, four gate resistors (two open gate resistors R Gon1 、R Gon2 Two, twoA plurality of off gate resistors R Goff1 、R Goff2 ) A controlled Device (DUT), three DC voltage sources (an on-gate voltage source V GSon A turn-off gate voltage source V GSoff A controller DC power supply voltage source V CC ) And two ground terminals (GND 1 and GND 2). The relay includes a common contact, a normally closed contact for closing and opening (contacts for switching contact when k1=0 and k2=0), and a normally open contact for closing and opening (contacts for switching contact when k1=0 and k2=0).
The primary side of the current sensor is connected in series to enter the main loop, and the secondary side of the current sensor is connected with the controller; one port of the controller is connected with the current sensor, one port of the controller is connected with the electromagnet coil of the relay, and the other port of the controller is connected with the DC power supply voltage source V CC Are connected; one end of a contact (K1 and K2) of the public end of the double-pole double-throw relay is connected with a grid electrode (G) of a controlled Device (DUT), and the other end of the contact is connected with a grid electrode resistor; open gate resistance R Gon1 One end is connected with a normally closed contact of the relay switch K1 which is opened and closed dynamically, and the other end is connected with an on port of the driving chip; open gate resistance R Gon2 One end is connected with a normally open contact of the switch K1, and the other end is connected with an on port of the driving chip; turn-off gate resistor R Goff1 One end is connected with a normally closed contact of the relay switch K2 which is opened and closed dynamically, and the other end is connected with an off port of the driving chip; turn-off gate resistor R Goff2 One end is connected with a normally open contact of the relay switch K2, and the other end is connected with an off port of the driving chip; one port of the driving chip is connected with the driving pulse generator, and the other port is connected with GND1, V GSon Port and DC voltage source V GSon Port is connected with V GSoff Port and DC voltage source V GSoff Connected with the on port and the grid electrode opening resistor R Gon One end is connected with the off port and the grid turn-off resistor R Goff One end of the GND2 port is connected with the source electrode (S) of the controlled device and is grounded (GND 2).
When the current I is greater than the action value I predetermined by the installation position and the working task of the overcurrent relay op And the comparison link outputs the output signal, and the output signal is processed and amplified by the controller and then input into the relay coil as shown in fig. 5. When the coil is electrifiedThe magnetic flux is generated in the iron core, the armature overcomes the spring counterforce to drive the contact system to act under the action of electromagnetic attraction, the movable-closing normally-closed contact is opened, and the movable-closing normally-open contact is closed, so that the grid resistance R is opened Gon1 And R is R Gon2 (R Gon1 >R Gon2 ) Is switched to realize the turn-off gate resistance R Goff1 、R Goff2 (R Goff1 >R Goff2 ) Is to be switched between the first and second modes). Because the mechanical contact needs to be driven to rotate and close by electromagnetic force, a certain power and time are needed, the relay has the inherent action time (a few milliseconds), and the general interference can not cause misoperation. The current of the coil is lost or the current passing through the coil is obviously reduced and is smaller than the return current I which can return the overcurrent relay to the original state re (I re <I op ) When the electromagnetic attraction force is smaller than the spring counter force, the armature is released, and the common contact is reset. The process has a short delay stage, the duration time influences the time of the overload-free regulation stage, and the duration time of the delay stage can be properly prolonged or reduced according to the requirements in actual working conditions. The wiring mode circuit has simple structure, less equipment and economic price.
In the circuit topology structure, the driving circuit is in different working states, and the working states of the relay are shown in the following table 1;
| operating state of the driving circuit | Actuation state of common contacts K1 and K2 of the relay | Current state of electromagnet coil of relay |
| |
0 | Is smaller than the action value I op |
| Overload |
0 | Is smaller than the action value I op |
| Overload |
1 | Is greater than the action value I op |
| Overload-free regulation and control |
1 | Greater than return current I re |
As shown in FIG. 6, when the driving circuit is in a normal working state and an overload unregulated state, the coil current of the electromagnet of the relay is smaller than the relay action value I op The common contacts K1 and K2 of the relay are respectively attracted to the respective number 0 contacts, and the grid on resistance and the grid off resistance of the power device are respectively R Gon1 And R is Goff1 。
As shown in FIG. 7, when the driving circuit is in overload regulation state, the current of the coil of the relay electromagnet is greater than the relay action value I op The common contacts K1 and K2 of the relay are respectively attracted to the respective contact number 1. When the driving circuit is in an overload regulation-control state, the current of the electromagnet coil of the relay is smaller than the action current value I of the relay op Is larger than the return current value I of the relay re The common contact K1 and the common contact K2 of the relay are still attracted to the contact No. 1. In the two working states, the grid electrode on resistance and the grid electrode off resistance of the driving chip are respectively R Gon2 And R is Goff2 。
Example 2
This embodiment employs a continuous regulation scheme, as shown in FIG. 8, which consists of a current sensor, a controller, three DC voltage sources (an on-gate voltage source V GSon A turn-off gate voltage source V GSoff A controller DC power supply voltage source V CC ) A driving chip, a pulse generator, an adjustable grid resistor R G A device under control (DUT) and two ground terminals (GND 1 and GND 2). The current sensor is used for monitoring the current condition of the main loop. The controller analyzes and processes the feedback signal of the current sensor, controls the working state of the relay and controls the adjustable grid resistor R G In the working state, the gate resistance R is continuously changed G 。
The primary side of the current sensor is connected in series to enter the main loop, and the secondary side of the current sensor is connected with the controller; one port of the controller is connected with the current sensor, and the other port is connected with the adjustable grid resistor R G The control port is connected with a DC power supply voltage source V of the controller CC Are connected; adjustable grid resistance R G One port is connected with the on port of the driving chip, one port is connected with the off port of the driving chip, one port is connected with the normally-closed contact of the relay, and one port is connected with the normally-open contact of the relay; the relay is connected with two different output ports of the adjustable grid resistor respectively, and the common contact is connected with the grid electrode (G) of the controlled device; one port of the driving chip is connected with the driving pulse generator, and the other port is connected with GND1, V GSon Port and DC voltage source V GSon Port is connected with V GSoff Port and DC voltage source V GSoff Connected with an on port and an off port and an adjustable grid resistor R G One end of the GND2 port is connected with the source electrode (S) of the controlled device and is grounded (GND 2).
As shown in FIG. 9, when the driving circuit is in a normal working state and an overload unregulated state, the coil current of the electromagnet of the relay is smaller than the relay action value I op The common contact K of the relay is attracted to the contact number 0, and the grid resistance of the power device is a larger fixed value R G 。
As shown in fig. 10, when the driving circuit is in the overload regulation state, the current of the coil of the relay electromagnet is greater than the relay action value I op The common contact K of the relay is attracted to the contact number 1. When the driving circuit is inWhen no overload regulation state exists, the current of the electromagnet coil of the relay is smaller than the action current value I of the relay op Is larger than the return current value I of the relay re The relay common contact K is still attracted to the contact number 1. In the two working states, a grid resistor R is connected between the grid of the controlled device and the driving chip G Gradually decreasing.
The foregoing is merely a preferred embodiment of the invention, and it is to be understood that the invention is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (8)
1. A gate drive circuit for increasing power device overload by reducing gate resistance, comprising: it comprises a current sensor, a controller, a relay, a driving chip, a pulse generator and a grid resistor R G A controlled device; grid resistance R G Comprising two on-gate resistors R Gon1 And R is Gon2 Two off-gate resistors R Goff1 And R is Goff2 ；
The pulse generator is connected with a driving chip, and an opening port and an opening grid resistor R of the driving chip Gon1 And R is Gon2 The turn-off port of the driving chip is connected with the turn-off grid resistor R Goff1 And R is Goff2 Connecting; the drain electrode of the controlled device is connected with a current sensor, the current sensor is connected with a controller, the grid electrode is connected with common contacts K1 and K2 of a relay, and the common contact K1 is connected with a grid electrode opening resistor R through a normally closed contact which is opened and closed by a movable way Gon1 Is connected with the resistor R of the open grid through the movable normally-open contact Gon2 Connected with the common contact K2 through a normally closed contact and a turn-off grid resistor R Goff1 Is connected with the turn-off grid resistor R through a movable normally-open contact Goff2 Connecting; the controller is connected with the relay electromagnet coilThe working state of the relay is controlled; the current sensor is used for monitoring the current condition of the main loop, the controller analyzes and processes the feedback signal of the current sensor, when the load is overloaded for a short time, the controller temporarily reduces the grid resistance of the controlled device by controlling the working state of the relay, improves the switching rate of the controlled device, reduces the switching loss of the controlled device, and improves the overload capacity of the controlled device for a short time.
2. A gate drive circuit for increasing power device overload by reducing gate resistance as claimed in claim 1, wherein: the working state comprises a normal working state and an overload regulation and control state;
in normal working state, the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K1 of the relay is attracted to the normally closed contact and the resistance R of the open grid Gon1 Connected with the common contact K2 and attracted at the normally closed contact and the turn-off grid resistor R Goff1 Connected with the controlled device through the on grid resistor R Gon1 Connected to the on-port of the driver chip via an off-gate resistor R Goff1 The switch-off port is connected with the drive chip;
when the normal state is changed into the overload regulation state, the current of the electromagnet coil of the relay is larger than the action value I of the relay op The common contact K1 of the relay is attracted to the normally-open contact and the resistance R of the open grid Gon2 Connected with the common contact K2 and attracted to the movable normally-open contact and the turn-off grid resistor R Goff2 Connected with the controlled device through the on grid resistor R Gon2 Connected to the on-port of the driver chip via an off-gate resistor R Goff2 Is connected with the turn-off port of the driving chip, at this time, the grid resistor R is turned on Gon2 The resistance value of (a) is smaller than the resistance R of the open grid electrode Gon1 Turn-off gate resistor R Goff2 Is smaller than the turn-off gate resistance R Goff1 The grid resistance connected between the grid of the controlled device and the driving chip is reduced, so that the switching speed of the controlled device is improved, the switching loss of the controlled device is reduced, and the short-time overload capacity of the controlled device is improved.
3. A gate drive circuit for increasing power device overload by reducing gate resistance as claimed in claim 2, wherein: the working state also comprises a short-time overload non-regulation state which is positioned between the normal working state and the overload regulation state, and the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K1 of the relay is attracted to the normally closed contact and the resistance R of the open grid Gon1 Connected with the common contact K2 and attracted at the normally closed contact and the turn-off grid resistor R Goff1 Connected with the controlled device through the on grid resistor R Gon1 Connected to the on-port of the driver chip via an off-gate resistor R Goff1 Is connected with the turn-off port of the driving chip.
4. A gate drive circuit for increasing power device overload by reducing gate resistance as claimed in claim 2, wherein: the working state also comprises an overload regulation-free state which is positioned after the overload regulation-free state, and the current of the electromagnet coil of the relay is smaller than the action current value I of the relay op Is larger than the return current value I of the relay re The common contact K1 of the relay is still attracted to the normally-open contact and the resistance R of the open grid Gon2 The common contact K2 is still attracted to the movable normally-open contact and the turn-off grid resistor R Goff2 Connected with the controlled device through the on grid resistor R Gon2 Connected to the on-port of the driver chip via an off-gate resistor R Goff2 And the load is connected with the turn-off port of the driving chip, so that the short-time overload capacity of the controlled device is improved after the load passes through an overload regulation and control state, and the switching loss of the controlled device is further reduced after the load passes through an overload regulation and control state without short time.
5. A gate drive circuit for increasing power device overload by reducing gate resistance, comprising: it comprises a current sensor, a controller, a relay, a driving chip, a pulse generator and an adjustable grid resistor R G A controlled device;
the pulse generator is connected with a driving chip, and an on port and an off port of the driving chip and an adjustable grid resistor R G Connecting; the drain electrode of the controlled device is connected with a current sensor, the current sensor is connected with a controller, the grid electrode is connected with a common contact K of a relay, and a normally-closed contact and a normally-open contact of the relay are connected with an adjustable grid electrode resistor R G The different output ports are connected; the controller is connected with the electromagnet coil of the relay, controls the working state of the relay and controls the adjustable grid resistor R G A working state; the current sensor is used for monitoring the current condition of the main loop, the controller analyzes and processes the feedback signal of the current sensor, when the load is overloaded for a short time, the controller controls the working state of the relay to enable the controlled device to work in different working states, continuously regulates and controls the resistance value of the grid resistor, and outputs the continuously-changed grid resistor R G Reducing the grid resistance R connected between the grid of the controlled device and the driving chip G The switching speed of the power device is improved, the switching loss of the power device is reduced, and the short-time overload capacity of the power device is improved.
6. A gate drive circuit for increasing power device overload by reducing gate resistance as recited in claim 5, wherein: the working state comprises a normal working state and an overload regulation and control state;
in normal working state, the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K of the relay is attracted to the normally closed contact and the adjustable grid resistor R G The grid electrode of the controlled device is connected with a grid resistor R with a large fixed value G ；
When the normal state is changed into the overload regulation state, the current of the electromagnet coil of the relay is larger than the action value I of the relay op The common contact K of the relay is attracted to the normally open contact and the adjustable grid resistor R G At this time, the driving chip is connected to the adjustable grid resistor R of the grid of the controlled device G Gradually reduce, thereby improving the switching rate of the power device, reducing the switching loss of the power device and improving the power deviceShort time overload capability of the member.
7. A gate drive circuit for increasing power device overload by reducing gate resistance as recited in claim 6, wherein: the working state also comprises a short-time overload non-regulation state which is positioned between the normal working state and the overload regulation state, and the current of the electromagnet coil of the relay is smaller than the action value I of the relay op The common contact K of the relay is attracted to the normally closed contact and the adjustable grid resistor R G The grid electrode of the controlled device is connected with a grid resistor R with a large fixed value G 。
8. A gate drive circuit for increasing power device overload by reducing gate resistance as recited in claim 6, wherein: the working state also comprises an overload regulation-free state which is positioned after the overload regulation-free state, and the current of the electromagnet coil of the relay is smaller than the action current value I of the relay op Is larger than the return current value I of the relay re The common contact K of the relay is still attracted to the normally-open contact and the adjustable grid resistor R G An adjustable grid resistor R connected with the grid of the controlled device by the driving chip G And the load is continuously reduced, the short-time overload capacity of the controlled device is improved after the load passes through an overload regulation state, and the switching loss of the controlled device is further reduced after the load passes through an overload regulation state without short time.
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| CN202310311219.2A CN116317480A (en) | 2023-03-28 | 2023-03-28 | Gate drive circuit for improving overload of power device by reducing gate resistance |
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| CN202310311219.2A CN116317480A (en) | 2023-03-28 | 2023-03-28 | Gate drive circuit for improving overload of power device by reducing gate resistance |
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