CN207924556U - The driving circuit of IGBT switching characteristic dynamically changeables - Google Patents
The driving circuit of IGBT switching characteristic dynamically changeables Download PDFInfo
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- CN207924556U CN207924556U CN201721533256.4U CN201721533256U CN207924556U CN 207924556 U CN207924556 U CN 207924556U CN 201721533256 U CN201721533256 U CN 201721533256U CN 207924556 U CN207924556 U CN 207924556U
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Abstract
The utility model provides a kind of driving circuit of IGBT switching characteristics dynamically changeable, including：Pulse distribution and digital control chip, switch arrays and gate driving array；Pulse distribution and digital control chip drive electric resistance array to connect the input terminal of bridge arm on IGBT by partial switch array and part of grid pole, and pass through rest part switch arrays and the input terminal of rest part gate driving electric resistance array connection IGBT lower bridge arms；Pulse distribution and digital control chip receive the control wave of controller, and receive the status information of bridge arm and IGBT lower bridge arms feedback on IGBT, according to control wave and status information, output control pulse drives bridge arm and IGBT lower bridge arms on IGBT after completing the processing such as pulse distribution, pulse self-locking, pulse interlocking, at the same time control switch arrays dynamic changes gate driving resistance, optimize switching characteristic, reduce switching loss, additionally malfunction coding can be fed back to controller, be convenient for intelligent trouble diagnosis.
Description
Technical field
The utility model is related to power electronics field, more particularly to a kind of driving of IGBT switching characteristics dynamically changeable
Circuit.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is bullet train
Draw the core devices of power module in AuCT.IGBT drivers are as the interface electricity between power circuit and controller
Road has significant effect in terms of the loss and reliability to system, is the crucial skill that restrict power module independent development
Art, a rational driver design plays an important role in entire power transmission transformation system, especially big in high voltage
In the application of power, how drive control and protection is carried out to ensure reliable, the trouble free service of IGBT to IGBT, are IGBT drivings
The difficult point and key of circuit and design protection.
Traditional IGBT drivers are made of simple analog circuit, such as the IGBT drive circuit for lower-wattage grade,
It is mainly " controller+analog drive circuit " to drive protection scheme.The protective underlayer of IGBT mainly passes through " analog drive circuit "
It completes, the program is in the form of a single, protection level is also single；For powerful IGBT drive circuit, driving protection scheme is more
For " controller+analog pulse distributor circuit+analog drive circuit "." simulation is increased relative to low power level drive scheme
Pulse distributor ", however this stage circuit does not generally have defencive function or defencive function is single.
In addition, traditional IGBT drivers being made of analog circuit can not intelligently dynamic control IGBT break-make mistake
Journey and Preservation tactics are single, the control performance and protection that cannot be satisfied high-power IGBT require.
Utility model content
The utility model embodiment provides a kind of driving circuit of IGBT switching characteristics dynamically changeable, is changed with passing through
IGBT dynamic switching characteristics reduce switching loss, reduce pressure of the fever to cooling system of high-power applications occasion.Effectively suppression
The overvoltage and overcurrent of fault moment processed, while the switching speed and performance of IGBT under normality are not influenced.
To achieve the goals above, the utility model embodiment provides a kind of driving of IGBT switching characteristics dynamically changeable
The driving circuit of circuit, the IGBT switching characteristic dynamically changeables includes：
Pulse distribution and digital control chip, switch arrays and gate driving array；The pulse distribution and digital control
Chip drives electric resistance array to connect the input terminal of bridge arm on IGBT by partial switch array and part of grid pole, and passes through its remaining part
The input terminal of switch-dividing array and rest part gate driving electric resistance array connection IGBT lower bridge arms；The pulse distribution and number
Control chip is additionally coupled to the controller and the switch arrays；
Pulse distribution and digital control chip receive the control wave of the controller, and receive bridge on the IGBT
The status information of arm and IGBT lower bridge arms feedback drives according to control wave dynamic and status information on the IGBT
Bridge arm and IGBT lower bridge arms, dynamic changes gate driving resistance, and carries out pulse to bridge arm on the IGBT and IGBT lower bridge arms
Distribution, pulse self-locking processing, pulse interlock process and switch arrays control.
In one embodiment, the control wave includes：The break-make control signal and described of bridge arm on the IGBT
IGBT lower bridge arms control signal to break-make.
In one embodiment, the pulse distribution and digital control chip are according to the control wave feedback control knot
Fruit.
In one embodiment, if there are the generation of IGBT failures, the pulse distribution and digital control chip are done directly driving
While protection, IGBT failure codes are fed back to the controller by serial communication interface.
In one embodiment, the status information includes：Di/dt, du/dt, over-current signal and the over-pressed signal of IGBT；It is described
Pulse distribution and digital control chip change the resistance of gate driving array according to the control wave and status information,
To change the switching characteristic of IGBT.
It in one embodiment, is made of one group of MOSFET pipe per the part switch arrays, the gate driving electricity per part
Resistance array does not worth that identical or different resistance is constituted by one group.
In one embodiment, the pulse self-locking processing includes：IGBT switches are carried out opening frequency and turn off the control of frequency
System, to ensure that IGBT opens minimum time and shutdown minimum time.
In one embodiment, the pulse interlock process includes：The pulse of bridge arm and IGBT lower bridge arms on the IGBT is set
Interlocking dead time, it is ensured that on the IGBT after the one of shutdown of bridge arm and IGBT lower bridge arms, another is open-minded again.
In the embodiment of the present application, it can reduce switching loss by changing IGBT dynamic switching characteristics, reduce high-power answer
With the fever of occasion to the pressure of cooling system.The overvoltage and overcurrent of fault moment can effectively be inhibited, while not influenced
The switching speed and performance of IGBT under normality.Malfunction coding can also be fed back to controller, convenient for controller to failure mode
Identification, ability of the enhancing controller to fault scatter.
Certainly implementing any product of the application or method must be not necessarily required to reach all the above excellent simultaneously
Point.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, other drawings may also be obtained based on these drawings.
Fig. 1 is the drive circuit schematic diagram of the IGBT switching characteristic dynamically changeables of the utility model embodiment；
Fig. 2 be the utility model embodiment pulse distribution and digital control chip to the control schematic diagram of upper bridge arm；
Fig. 3 be the utility model embodiment pulse distribution and digital control chip to the control schematic diagram of lower bridge arm；
Fig. 4 is the IGBT switching characteristic dynamic protection method flow charts of the utility model embodiment.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
Through research, the switch performance of IGBT and loss are especially being opened shutdown transient process by gate driving Resistance Influence
In, the size for quickly adjusting gate driving resistance is needed, the rationalization distribution purpose of loss, overvoltage and overcurrent is reached；Together
When nonserviceable under, pass through adjust gate driving resistance size, moreover it is possible to IGBT carry out active protection.In addition, in order to keep away
The problems such as exempting from the additional interference and synchronism due to the separation control introducing of pulse distributor and drive control circuit, this practicality
It is novel that pulse distribution and digital drive control are integrated into a control module, provide a kind of IGBT switching characteristics dynamically changeable
Driving circuit.
Fig. 1 is the drive circuit schematic diagram of the IGBT switching characteristic dynamically changeables of the utility model embodiment, such as Fig. 1 institutes
Show, the driving circuit of the IGBT switching characteristic dynamically changeables includes：
Pulse distribution and digital control chip, switch arrays and gate driving array；The pulse distribution and digital control
Chip drives electric resistance array to connect the input terminal of bridge arm on IGBT by partial switch array and part of grid pole, and passes through its remaining part
The input terminal of switch-dividing array and rest part gate driving electric resistance array connection IGBT lower bridge arms；The pulse distribution and number
Control chip is additionally coupled to the controller and the switch arrays.
Controller is used to send out the control waves of IGBT bridge arms, and in an embodiment, which includes：
The break-make instruction (i.e. control wave) of the upper bridge arms of IGBT and the IGBT lower bridge arms, which instruct break-make, (controls pulse letter
Number).
In one embodiment, the controller of the utility model embodiment can be the traction control unit (TCU) on train,
Can be PLC etc..
According to the control wave, pulse distribution and digital control chip can pass through switch arrays and gate driving battle array
On row (sending the upper bridge arm control pulses of IGBT and IGBT lower bridge arms control pulse to switch arrays) break-make IGBT bridge arm or
IGBT lower bridge arms.
In one embodiment, pulse distribution and digital control chip can also according to control wave feedback control results,
Feedback control results can be that bridge arm feedback of status (the upper bridge arm on off operating modes of IGBT) or IGBT lower bridge arm states are anti-on IGBT
It presents (IGBT lower bridge arms on off operating mode).
Bridge arm and the shape of IGBT lower bridge arms feedback on IGBT can also be received after pulse distribution and digital control chip
State information, in an embodiment, which can be di/dt, du/dt, overcurrent, overvoltage of IGBT etc..Pulse distribution and number
Word controls chip according to the status information, can change gate driving resistance by controlling switch arrays dynamic, and on IGBT
Bridge arm and IGBT lower bridge arms carry out the processing such as pulse distribution, pulse self-locking processing, pulse interlock process, final to realize to IGBT's
Drive control.
If pulse distribution and digital control chip receive the status information of bridge arm and IGBT lower bridge arms feedback on IGBT
After (overcurrent, overvoltage, di/dt, du/dt etc.), if there is failure, pulse distribution and digital control chip are needed the failure
Corresponding failure code feeds back to controller by dedicated serial communication interface, to distinguish the failure mode of IGBT.One is real
It applies in example, failure code can send byte information, and different digital represents different failures.
Pulse distribution and digital control chip can be by controlling switch arrays, and dynamic changes the grid under current state and drives
Dynamic resistance, and then change the switching characteristic of IGBT.Specifically, as shown in Figures 2 and 3, pulse distribution and digital control chip are logical
Cross bridge arm (Fig. 2) on partial switch array and part of grid pole driving electric resistance array connection IGBT, also by partial switch array and
Part of grid pole drives electric resistance array connection IGBT lower bridge arms (Fig. 3), is made of one group of MOSFET pipe per the part switch arrays,
Do not worth that identical or different resistance is constituted by one group per the part gate driving electric resistance array, a MOSFET pipe is connected to one
A resistance.It should be noted that the IGBT lower bridge arms on IGBT in Fig. 2 in bridge arm and Fig. 3 pass through corresponding detection
Circuit is connected to pulse distribution and digital control chip, and detection circuit is for detecting the mistake of bridge arm and IGBT lower bridge arms on IGBT
The feedback signals such as stream, overvoltage, and by feedback signal back to pulse distribution and digital control chip.It in fig. 2 and in Fig. 3 will
The upper bridge arms of IGBT and IGBT lower bridge arms separate, merely to clearly each MOSFET pipes and corresponding resistance in description switch arrays
Connection relation.
MOSFET pipes receive the control signal from pulse distribution and digital control chip, pulse distribution and digital control core
Piece can control disconnection and the closure (switch arrays control) of corresponding MOSFET pipes by switch selection signal, that is, change grid
Resistance is driven, the change of IGBT switching characteristics is realized, protects and improve response characteristics of IGBT during turning on and off.
In one embodiment, pulse distribution and digital control chip are connected to jtag interface and reset circuit, and reset circuit is logical
A capacity earth is crossed, and is connected to 5V power supplys.
In one embodiment, pulse distribution and digital control chip can be FPGA and CPLD.
Pulse distributor and drive control function are integrated into a pulse distribution and digital control core by the utility model
The status feedback information distribution of piece, the control wave of integrated controller and upper and lower two bridge arm IGBT control the same of pulse
When, gate driving resistance can be changed to dynamic with dynamic control switch arrays, protect and improve IGBT and turning on and off
Response characteristic in the process.Pulse distribution and digital control chip may be implemented to be switched on or off IGBT specific by programming
The control of dynamic process has many advantages, such as that control accuracy height, controllability are strong.
As an embodiment of the utility model, above-mentioned pulse self-locking processing includes：IGBT switches are carried out opening frequency
And the control of shutdown frequency realizes the self-locking turned on and off, no to ensure that IGBT opens minimum time and shutdown minimum time
Device can be caused to damage.
As an embodiment of the utility model, above-mentioned pulse interlock process includes：Be arranged on the IGBT bridge arm and
The interlocking dead time of pulse of IGBT lower bridge arms, it is ensured that on the IGBT after the one of shutdown of bridge arm and IGBT lower bridge arms,
Another is open-minded again, prevents the straight-through phenomenon of upper and lower two pipes.
Traditional analog-driven is only capable of carrying out IGBT single protection, and controller can not recognize the failure mode of IGBT,
It is not easy to analyze failure and protected.And the driving circuit of the IGBT switching characteristic dynamically changeables of the utility model is directly complete
While protection at driving, fault message is sent to by control by serial line interface after the type that IGBT breaks down being encoded
Device keeps Drive Protecting Circuit more intelligent.
The utility model embodiment provides a kind of guard method of IGBT switching characteristics dynamically changeable, and IGBT switches are special
Property dynamic protection method can be applied to the driving circuit of IGBT switching characteristics dynamically changeable shown in FIG. 1, as shown in figure 4, should
IGBT switching characteristic dynamic protection methods include：
S401：The controller sends control wave to the digital driver circuitry and controller；
S402：The pulse distribution and digital control chip drive bridge arm on the IGBT according to the control wave
And IGBT lower bridge arms；
S403：The pulse distribution and digital control chip according to bridge arm on the control wave and the IGBT and
The status information control switch arrays dynamic of IGBT lower bridge arms feedback changes gate driving resistance, and completes pulse distribution, pulse
Self-locking processing, pulse interlock process, final output control bridge arm and IGBT lower bridge arms on IGBT described in pulsed drive.
In one embodiment, carrying out pulse self-locking processing includes：IGBT switches are carried out opening frequency and turn off the control of frequency
System, to ensure that IGBT opens minimum time and shutdown minimum time.
In one embodiment, carrying out pulse interlock process includes：The pulse of bridge arm and IGBT lower bridge arms on the IGBT is set
Interlocking dead time, it is ensured that on the IGBT after the one of shutdown of bridge arm and IGBT lower bridge arms, another is open-minded again.
In one embodiment, further include：The pulse distribution and digital control chip are fed back according to the control wave
Control result；
If there are the generation of IGBT failures, while the pulse distribution and digital control chip are done directly driving protection,
By serial communication interface IGBT failure codes are fed back to the controller.
Specific embodiment is applied in the utility model to be expounded the principles of the present invention and embodiment, with
The explanation of upper embodiment is merely used to help understand the method and its core concept of the utility model；Meanwhile for this field
Those skilled in the art, according to the thought of the utility model, there will be changes in the specific implementation manner and application range, comprehensive
Upper described, the content of the present specification should not be construed as a limitation of the present invention.
Claims (5)
1. a kind of driving circuit of IGBT switching characteristics dynamically changeable, which is characterized in that including：
Pulse distribution and digital control chip, switch arrays and gate driving array；The pulse distribution and digital control chip
It drives electric resistance array to connect the input terminal of bridge arm on IGBT by partial switch array and part of grid pole, and is opened by rest part
Close array and the input terminal of rest part gate driving electric resistance array connection IGBT lower bridge arms；The pulse distribution and digital control
Chip is additionally coupled to a controller and the switch arrays；
The pulse distribution and digital control chip according to bridge arm on the control wave of the controller and the IGBT and
The status information output order of IGBT lower bridge arms feedback, to control switch arrays closure and/disconnection, and output control pulse drives
Bridge arm and IGBT lower bridge arms on the IGBT.
2. the driving circuit of IGBT switching characteristics dynamically changeable according to claim 1, which is characterized in that the pulse point
Match and digital control chip according to the control wave to the controller feedback control results.
3. the driving circuit of IGBT switching characteristics dynamically changeable according to claim 2, which is characterized in that if there are IGBT
Failure occurs, while the pulse distribution and digital control chip directly carry out driving protection, by serial communication interface to
The controller feeds back IGBT failure codes.
4. the driving circuit of IGBT switching characteristics dynamically changeable according to claim 1, which is characterized in that described in per part
Switch arrays are made of one group of MOSFET pipe, per the part gate driving electric resistance array by the identical or different electricity of one group of resistance value
Resistance is constituted.
5. the driving circuit of IGBT switching characteristics dynamically changeable according to claim 1, which is characterized in that pulse distribution and
Digital control chip is FPGA or CPLD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201721533256.4U CN207924556U (en) | 2017-11-16 | 2017-11-16 | The driving circuit of IGBT switching characteristic dynamically changeables |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721533256.4U CN207924556U (en) | 2017-11-16 | 2017-11-16 | The driving circuit of IGBT switching characteristic dynamically changeables |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111645490A (en) * | 2020-06-11 | 2020-09-11 | 江苏罗思韦尔电气有限公司 | Automobile air conditioner temperature controller and fault repairing method thereof |
| CN116317480A (en) * | 2023-03-28 | 2023-06-23 | 重庆大学 | Gate drive circuit for improving overload of power device by reducing gate resistance |
| CN116743138A (en) * | 2023-06-13 | 2023-09-12 | 重庆大学 | Control device and control method for multi-operation-mode circuit |
-
2017
- 2017-11-16 CN CN201721533256.4U patent/CN207924556U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111645490A (en) * | 2020-06-11 | 2020-09-11 | 江苏罗思韦尔电气有限公司 | Automobile air conditioner temperature controller and fault repairing method thereof |
| CN111645490B (en) * | 2020-06-11 | 2022-05-24 | 江苏罗思韦尔电气有限公司 | Automobile air conditioner temperature controller and fault repairing method thereof |
| CN116317480A (en) * | 2023-03-28 | 2023-06-23 | 重庆大学 | Gate drive circuit for improving overload of power device by reducing gate resistance |
| CN116743138A (en) * | 2023-06-13 | 2023-09-12 | 重庆大学 | Control device and control method for multi-operation-mode circuit |
| CN116743138B (en) * | 2023-06-13 | 2024-04-02 | 重庆大学 | Control device and control method for multi-operation-mode circuit |
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