CN206490661U - Igbt drive circuit - Google Patents
Igbt drive circuit Download PDFInfo
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- CN206490661U CN206490661U CN201720013677.8U CN201720013677U CN206490661U CN 206490661 U CN206490661 U CN 206490661U CN 201720013677 U CN201720013677 U CN 201720013677U CN 206490661 U CN206490661 U CN 206490661U
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Abstract
The utility model is related to motor-drive circuit, more particularly to a kind of IGBT drive circuit.The IGBT drive circuit that the utility model is provided, including, driving optocoupler, switch driving circuit, soft breaking circuit and saturation pressure down detection circuit；The driving optocoupler is connected by the switch driving circuit and IGBT gate pole, the break-make for controlling IGBT；Saturation voltage drop detects voltage across poles between electric circuit inspection IGBT colelctor electrode, emitter-base bandgap grading, in the controlled IGBT of shut-off, if detecting IGBT voltage across poles beyond threshold value, then control soft breaking circuit is turned off to IGBT, to reduce instantaneous voltage across poles during controlled IGBT shut-offs, so as to reduce circuit risk.
Description
Technical field
The utility model is related to motor driving field, more particularly to a kind of IGBT drive circuit.
Background technology
In the prior art, IGBT is essential switching device in servomotor drive circuit, but is due to IGBT's
Inherent characteristic, if occurring that hurricane is up to specified in its C pole of shutdown moment, E poles voltage across poles using hard shut-off mode to IGBT
It is worth above several times, this causes safely great harm to device.
Utility model content
When the purpose of this utility model is to overcome the IGBT for being used for motor control in the prior art using hard shut-off mode,
The problem of hurricane up to rated value above several times occur in its C pole of shutdown moment, E poles voltage across poles IGBT is avoided there is provided one kind
The high drive circuit of C poles, E poles voltage across poles hurricane when off.
In order to realize above-mentioned utility model purpose, the utility model provides following technical scheme：
A kind of IGBT drive circuit, including, driving optocoupler, switch driving circuit, soft breaking circuit and saturation voltage drop inspection
Slowdown monitoring circuit；
The driving optocoupler is connected by the switch driving circuit and IGBT gate pole, the break-make for controlling IGBT；
Colelctor electrode, the emitter-base bandgap grading of described two inputs of saturation pressure down detection circuit respectively with the IGBT are connected, for examining
Whether the shut-off voltage for surveying IGBT exceeds predetermined threshold value；
The driving optocoupler is also connected by the soft breaking circuit and IGBT gate pole, and receives the saturation voltage drop inspection
The testing result of slowdown monitoring circuit, when IGBT shut-off voltage exceeds predetermined threshold value, the driving optocoupler terminates to drive the switch
The control of dynamic circuit, the IGBT is closed using the soft breaking circuit.
Also include PWM modulate circuits, the PWM modulate circuits be used for PWM ripples are filtered, burr remove after input to
The driving optocoupler, the driving optocoupler is driven control to IGBT according to the PWM ripples.
Further, alarm feedback circuit, the alarm feedback circuit receives alarm signal from the driving optocoupler, and will
The signal feeds back to controller.
Further, the switch driving circuit includes open circuit and breaking circuit；
The open circuit includes the first PMOS Q1, the first PMOS Q1 by first resistor R3 from the driving
Optocoupler receives open signal, while the source electrode of the first PMOS Q1 is connected with power supply, drain the first resistor for passing through and connecing
R3 groups are connected with being controlled IGBT gate pole；
The breaking circuit includes the first NMOS tube Q2, the first NMOS tube Q2 by second resistance R2 from the driving
Optocoupler receives cut-off signals, while the source electrode of the first NMOS tube Q2 connects negative supply, drain the second resistance for passing through and connecing
Group is connected with controlled IGBT gate pole.
Further, the saturation pressure down detection circuit includes, first port and second port, the first port and
Colelctor electrode, the emitter-base bandgap grading of Two-port netwerk respectively with controlled IGBT are connected, the pole between colelctor electrode and emitter-base bandgap grading for detecting controlled IGBT
Between voltage；
Also include, the first diode D1, the second diode D2, the first voltage-regulator diode ZD1, the second voltage-regulator diode ZD2,
3rd resistor R3, the 4th resistance R4 and the first electric capacity C1；
The negative pole of the first diode D1 is connected with first port, second port, positive pole and the first voltage-regulator diode ZD1
Positive pole connection, the first voltage-regulator diode ZD1 negative pole by 3rd resistor R3 with and the first electric capacity C1, the second diode that connect
D2, the second voltage-regulator diode ZD2 connections, wherein, it is connected with the second diode D2 negative poles and the second voltage-regulator diode ZD2 negative poles；
The negative pole of the first voltage-regulator diode ZD1 also passes through 3rd resistor R3, the 4th resistance R4 and the switch drive
The output end connection of circuit.
Further, the soft breaking circuit passes through the 5th resistance including the second NMOS tube Q3, the second NMOS tube Q3
R5 receives soft switching signal from the driving optocoupler, while the source electrode of the second NMOS tube Q3 connects negative supply, error of omission passes through
6th resistance R6 connects controlled IGBT gate pole.
Further, the first gate pole guarantor is additionally provided between the switch driving circuit, soft breaking circuit and controlled IGBT
Protection circuit, the first gate pole protection circuit includes the 3rd diode D3, the 7th resistance R7, the 3rd voltage-regulator diode ZD3 and the
Four voltage-regulator diode ZD4；
The positive pole of the 3rd diode D3 is connected with the output end of the switch driving circuit, soft breaking circuit, negative pole
It is connected with power supply；
Described 7th resistance one end is connected with the output end of the switch driving circuit, soft breaking circuit, other end ground connection；
The 3rd voltage-regulator diode ZD3 and the 4th voltage-regulator diode ZD4 differential concatenations, wherein, the 3rd voltage-regulator diode
ZD3 negative pole is connected with the output end of the switch driving circuit, soft breaking circuit, the 4th voltage-regulator diode ZD4 negative poles ground connection.
Further, in some application scenarios, the bullet train driving application field of such as high-speed railway, due to different tracks
Train it is closer to the distance, when two cars cross, the train of adjacent orbit at a high speed by when, side train can be produced very big
Electromagnetic interference, now, the several times of the IGBT collector voltages meeting hurricane up to rated voltage of drive circuit in train, now, if
IGBT is off state, then has breakdown risk, in light of this situation, and the IGBT drive circuit that the utility model is provided also is wrapped
Include detection IGBT on off states and whether collector voltage exceeds the dynamic active clamping protective circuit of threshold value, the dynamic has
The input of source clamping protective circuit is connected with controlled IGBT colelctor electrode, and the first output end is defeated with the switch driving circuit
Go out end connection, the second output end is connected with the input of the breaking circuit；For detecting collector voltage whether beyond default
Threshold value, when beyond threshold value, reduces the voltage.
Further, the dynamic active clamping protective circuit includes the voltage-regulator diode group concatenated in the same direction by least two
Into the first voltage-regulator diode group, the first voltage-regulator diode group is connected with controlled IGBT colelctor electrode, voltage stabilizing two therein
The negative pole of pole pipe is input, just extremely output end；
The output end of the first voltage-regulator diode group is connected with the 3rd NMOS tube Q4 drain electrode；The 3rd NMOS tube Q4
Grid be connected with the output end of a delay circuit, the output end of the input of the delay circuit and switch driving circuit connects
Connect；
Also include the second voltage-regulator diode group of the voltage-regulator diode composition that at least two is concatenated, the pole of the second voltage stabilizing two
Guan Zuzhong voltage-regulator diode negative pole is input, just extremely output end；The second voltage-regulator diode group and the described 3rd
NMOS tube Q4 simultaneously connects；Its input is connected with the output end of the first voltage-regulator diode group, and its output end is with the 3rd NMOS tube Q4's
Source electrode is connected；
The output end of the second voltage-regulator diode group also by the 4th diode D4, the 8th resistance R8 of concatenation with it is described
The output end connection of switch driving circuit, one end that the 8th resistance R8 is connected with switch driving circuit output end is the dynamic
First output end of active clamp protection circuit；
The output end of the second voltage-regulator diode group also passes through the 5th diode D5, the 9th resistance R9 and the 4th NMOS tube
Q5 grid connection；4th NMOS tube Q5 source electrode connects negative supply, the input that drain electrode passes through the tenth resistance R10 and breaking circuit
One end of the input connection of end connection, the tenth resistance R10 and breaking circuit is the dynamic active clamping protective circuit
Second output end.
Specifically, in switch driving circuit normal work, the delay circuit being connected with the 3rd NMOS tube Q4 grid by
It is connected in the output end with the open circuit, therefore, the 3rd NMOS tube Q4 grid is in high level all the time, that is, turns on shape
State, now, the second voltage-regulator diode group the 3rd NMOS tube Q4 short circuits switched on do not work, now, by the pole of the first voltage stabilizing two
Pipe group determines IGBT colelctor electrode first thresholds, when collector voltage exceedes the threshold value, diode in the first voltage-regulator diode group
Breakdown, now, the dynamic active clamping protective circuit, on the one hand by the second output end, is the input of the breaking circuit
End output low level, allows breaking circuit to be stopped；On the other hand by the first output end by high level output to the switch
The output end of drive circuit, to control the gate pole of the controlled IGBT to open, its collector voltage is lowered.And in switch drive
When circuit does not work, now equipment（Such as train）Generally in halted state, controlled IGBT current collections very high voltage now can
To bear threshold value higher during than work, now, in this circuit, the 3rd NMOS tube Q4 grid does not receive the height of open circuit
Level, is off open-circuit condition, now the first voltage-regulator diode group and the second voltage-regulator diode group concatenation, and both together decide on
The Second Threshold of IGBT collector voltages, when collector voltage exceedes the value, active clamp protection circuit is again by first
Output end is by the output end of high level output to the switch driving circuit, to control the gate pole of the controlled IGBT to open, from
And reduce collector voltage.
Further, the protection of the second gate pole is additionally provided between the grid and the negative supply of the 4th NMOS tube Q5
Circuit.
Compared with prior art, the beneficial effects of the utility model：The IGBT drive circuit that the utility model is provided, including
The saturation pressure down detection circuit of voltage across poles between IGBT colelctor electrode, emitter-base bandgap grading is detected, in the controlled IGBT of shut-off, if detection
Exceed threshold value to IGBT voltage across poles, then control soft breaking circuit to turn off IGBT, to reduce when controlled IGBT is turned off
Instantaneous voltage across poles, so as to reduce circuit risk.
In other embodiment, in the high-power applications occasion such as such as high-speed railway, during for IGBT normal works and not
During work, IGBT colelctor electrode instantaneous voltages have different producing causes, so that the problem of needing different clamped voltage values, cleverly
Dynamic clamp circuit is devised, that is, causes the second voltage-regulator diode group and the 3rd NMOS tube and connects, in normal work, by the 3rd
NMOS tube is turned on, and short circuit the second voltage-regulator diode group determines clamp voltage threshold value by the first voltage-regulator diode group, and is not working
When, the shut-off of the 3rd NMOS tube combines the second voltage-regulator diode group by the first voltage-regulator diode and together decides on clamped voltage value, so that
The problem of different clamp voltages are needed when when solving IGBT normal works and not working.
Brief description of the drawings：
Fig. 1 is the specific embodiment theory diagram of the utility model one.
Optocoupler drive circuit figure in Fig. 2 the utility model embodiments.
Fig. 3 is switch driving circuit and soft breaking circuit circuit diagram in the utility model embodiment.
Fig. 4 is saturation voltage drop detection circuit circuit diagram in the utility model embodiment.
Fig. 5 is the first gate pole protection circuit circuit diagram in the utility model embodiment.
Fig. 6 is the utility model another specific embodiment theory diagram.
Fig. 7 is active clamp protection circuit circuit diagram in the utility model embodiment.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment is described in further detail to the utility model.But this should not be understood
Following embodiment, all technologies realized based on the utility model content are only limitted to for the scope of the above-mentioned theme of the utility model
Belong to scope of the present utility model.
Embodiment 1：As shown in Figures 1 to 5, the present embodiment provides a kind of IGBT drive circuit, including, drive optocoupler 1
（U1）, switch driving circuit 2, soft breaking circuit 4 and saturation pressure down detection circuit 3；
The driving optocoupler 1 is connected by the switch driving circuit 2 with IGBT gate pole, for controlling IGBT's logical
It is disconnected；
Colelctor electrode, the emitter-base bandgap grading of described 3 two inputs of saturation pressure down detection circuit respectively with the IGBT are connected, for examining
Whether the shut-off voltage for surveying IGBT exceeds predetermined threshold value；
The driving optocoupler 1 is also connected by the soft breaking circuit 4 with IGBT gate pole, and receives the saturation voltage drop
The testing result of circuit is detected, when IGBT shut-off voltage exceeds predetermined threshold value, the driving optocoupler terminates to the switch
The control of drive circuit, the IGBT is closed using the soft breaking circuit.
The IGBT drive circuit that the present embodiment is provided also includes PWM modulate circuits 5, and the PWM modulate circuits 5 are used for will
PWM ripples are filtered, burr is inputted after removing to the driving optocoupler, and the driving optocoupler 1 is carried out according to the PWM ripples to IGBT
Drive control.The IGBT drive circuit that the present embodiment is provided also includes alarm feedback circuit 6, and the alarm feedback circuit 6 is from institute
State driving optocoupler 1 and receive alarm signal, and the signal is fed back into controller.
Specifically, the switch driving circuit 2 includes open circuit 21 and breaking circuit 22；The open circuit 21 includes
First PMOS Q1, the first PMOS Q1 receives open signal by first resistor R3 from the driving optocoupler, while institute
The source electrode for stating the first PMOS Q1 is connected with power supply, the first resistor R3 groups for passing through and connecing that drain and the gate pole company for being controlled IGBT
Connect；The breaking circuit 22 includes the first NMOS tube Q2, the first NMOS tube Q2 by second resistance R2 from the driving light
Cut-off signals are received in coupling, while the source electrode of the first NMOS tube Q2 connects negative supply, drain the second resistance group for passing through and connecing
It is connected with controlled IGBT gate pole.In the present embodiment, first resistor group and second resistance group are made up of three resistor coupled in parallel,
In fact, first resistor group and second resistance group can be made up of the resistor coupled in parallel of more than two, to cause resistance group to reach finger
Determine resistance.
In the present embodiment, saturation pressure down detection circuit 3 includes, first port and second port, the first port and
Colelctor electrode, the emitter-base bandgap grading of Two-port netwerk respectively with controlled IGBT are connected, the pole between colelctor electrode and emitter-base bandgap grading for detecting controlled IGBT
Between voltage；Specifically, as shown in figure 4, first port, second port are accessed by standard interface J4.Also include, the first diode
D1, the second diode D2, the first voltage-regulator diode ZD1, the second voltage-regulator diode ZD2,3rd resistor R3, the 4th resistance R4 and
One electric capacity C1；The negative pole of the first diode D1 is connected with first port, second port, positive pole and the first voltage-regulator diode
ZD1 positive pole connection, the first voltage-regulator diode ZD1 negative pole by 3rd resistor R3 with and connect the first electric capacity C1, the two or two
Pole pipe D2, the second voltage-regulator diode ZD2 connections, wherein, 3rd resistor R3 and the second diode D2 negative poles and the pole of the second voltage stabilizing two
One end of pipe ZD2 negative poles connection still feeds back to signal driving optocoupler U1 feedback end, its DESAT port with driving optocoupler
Connection, testing result is fed back in driving optocoupler；First voltage-regulator diode ZD1 negative pole also passes through 3rd resistor described in
R3, the 4th resistance R4 and first resistor group, the output end of second resistance group（That is the output end of switch driving circuit 2）Connection, satisfies
In voltage drop detection circuit 3, threshold values of the first voltage-regulator diode ZD1 for adjusting detected voltage across poles, and the 4th resistance
R4, the first electric capacity C1 are used to adjust time of fire alarming, i.e. in general, if voltage across poles is simply being preset beyond threshold value
If occurring within time of fire alarming, then not alarm, the only time beyond threshold value exceedes the preset alarm time, just to driving light
Coupling sends alarm signal, now drives optocoupler just to drive soft breaking circuit to turn off IGBT.
In the present embodiment, the soft breaking circuit 4 includes the second NMOS tube Q3, the second NMOS tube Q3 and passes through the 5th electricity
Hinder R5 and receive soft switching signal from the driving optocoupler, while the source electrode of the second NMOS tube Q3 connects negative supply, error of omission is logical
Cross the gate pole that the 6th resistance R6 meets controlled IGBT.
The first gate pole protection circuit is additionally provided between the switch driving circuit 2, soft breaking circuit 4 and controlled IGBT,
The first gate pole protection circuit includes the 3rd diode D3, the 7th resistance R7, the 3rd voltage-regulator diode ZD3 and the 4th voltage stabilizing two
Pole pipe ZD4；The positive pole of the 3rd diode D3 is connected with the output end of the switch driving circuit, soft breaking circuit, negative pole
It is connected with power supply；Described 7th resistance one end is connected with the output end of the switch driving circuit, soft breaking circuit, another termination
Ground；The 3rd voltage-regulator diode ZD3 and the 4th voltage-regulator diode ZD4 differential concatenations, wherein, the 3rd voltage-regulator diode ZD3's
Negative pole is connected with the output end of the switch driving circuit 2, soft breaking circuit 4, the 4th voltage-regulator diode ZD4 negative poles ground connection.
Embodiment 2：As shown in Figure 6, Figure 7, in some application scenarios, the bullet train driving application neck of such as high-speed railway
Domain, because not co-orbital train is closer to the distance, when two cars cross, the train of adjacent orbit at a high speed by when, can be to side
The circuit of the static train parked produces very big electromagnetic interference, now, the IGBT collection of switch driving circuit in static train
The several times of electrode voltage meeting hurricane up to rated voltage, now, if IGBT is off state, there is breakdown risk.
In light of this situation, the IGBT drive circuit that the present embodiment is provided also includes detection IGBT on off states and current collection
Whether pole tension exceeds the dynamic active clamping protective circuit of threshold value, the input and quilt of the dynamic active clamping protective circuit
Control IGBT colelctor electrode connection, the first output end is connected with the output end of the switch driving circuit, the second output end with it is described
The input connection of breaking circuit；For detecting whether collector voltage exceeds predetermined threshold value, when beyond threshold value, the electricity is reduced
Pressure.
The dynamic active clamping protective circuit 7 includes voltage-regulator diode is constituted first concatenated in the same direction by least two
Voltage-regulator diode group, the first voltage-regulator diode group is connected with controlled IGBT colelctor electrode, voltage-regulator diode therein it is negative
Extremely input, just extremely output end；The output end of the first voltage-regulator diode group is connected with the 3rd NMOS tube Q4 drain electrode；
The grid of the 3rd NMOS tube Q4 is connected with the output end of a delay circuit, the input and switch drive of the delay circuit
The output end connection of circuit；Also include the second voltage-regulator diode group of the voltage-regulator diode composition that at least two is concatenated, described second
Voltage-regulator diode negative pole in voltage-regulator diode group is input, just extremely output end；The second voltage-regulator diode group and institute
State the 3rd NMOS tube Q4 and connect；Its input is connected with the output end of the first voltage-regulator diode group, its output end and the 3rd NMOS
Pipe Q4 source electrode connection；The output end of the second voltage-regulator diode group also passes through the 4th diode D4, the 8th resistance of concatenation
R8 is connected with the output end of the switch driving circuit；The output end of the second voltage-regulator diode group also passes through the 5th diode
D5, the 9th resistance R9 are connected with the 4th NMOS tube Q5 grid；4th NMOS tube Q5 source electrode connects negative supply, and drain electrode passes through the
In the input connection of ten resistance R10 and breaking circuit, some embodiments, grid and the negative pressure of the 4th NMOS tube Q5
The second gate pole protection circuit is additionally provided between power supply.
Specifically, in switch driving circuit normal work, the delay circuit being connected with the 3rd NMOS tube Q4 grid by
It is connected in the output end with the open circuit, therefore, the 3rd NMOS tube Q4 grid is in high level all the time, that is, turns on shape
State, now, the second voltage-regulator diode group the 3rd NMOS tube Q4 short circuits switched on do not work, now, by the pole of the first voltage stabilizing two
Pipe group determines IGBT colelctor electrode first thresholds, when collector voltage exceedes the threshold value, diode in the first voltage-regulator diode group
Breakdown, now, the dynamic active clamping protective circuit, on the one hand by the second output end, is the input of the breaking circuit
End output low level, allows breaking circuit to be stopped；On the other hand by the first output end by high level output to the switch
The output end of drive circuit, to control the gate pole of the controlled IGBT to open, its collector voltage is lowered.And in switch drive
When circuit does not work, now equipment（Such as train）Generally in halted state, controlled IGBT current collections very high voltage now can
To bear threshold value higher during than work, now, in this circuit, the 3rd NMOS tube Q4 grid does not receive the height of open circuit
Level, is off open-circuit condition, now the first voltage-regulator diode group and the second voltage-regulator diode group concatenation, and both together decide on
The Second Threshold of IGBT collector voltages, when collector voltage exceedes the value, active clamp protection circuit is again by first
Output end is by the output end of high level output to the switch driving circuit, to control the gate pole of the controlled IGBT to open, from
And reduce collector voltage.
Claims (10)
1. a kind of IGBT drive circuit, it is characterised in that including driving optocoupler, switch driving circuit, soft breaking circuit and satisfying
And voltage drop detection circuit；
The driving optocoupler is connected by the switch driving circuit and IGBT gate pole, the break-make for controlling IGBT；
Colelctor electrode, the emitter-base bandgap grading of described two inputs of saturation pressure down detection circuit respectively with the IGBT are connected, for detecting
Whether IGBT shut-off voltage exceeds predetermined threshold value；
The driving optocoupler is also connected by the soft breaking circuit and IGBT gate pole, and receives the saturation voltage drop detection electricity
The testing result on road, when IGBT shut-off voltage exceeds predetermined threshold value, the driving optocoupler terminates to switch drive electricity
The control on road, the IGBT is closed using the soft breaking circuit.
2. IGBT drive circuit as claimed in claim 1, it is characterised in that also including PWM modulate circuits, the PWM conditionings
Circuit is for PWM ripples to be filtered, burr is inputted to the driving optocoupler after removing, and the driving optocoupler is according to the PWM ripples
Control is driven to IGBT.
3. IGBT drive circuit as claimed in claim 1, it is characterised in that alarm feedback circuit, the alarm feedback circuit
Alarm signal is received from the driving optocoupler, and the signal is fed back into controller.
4. IGBT drive circuit as claimed in claim 1, it is characterised in that the switch driving circuit include open circuit and
Breaking circuit；
The open circuit includes the first PMOS Q1, the first PMOS Q1 by first resistor R3 from the driving optocoupler
Open signal is received, while the source electrode of the first PMOS Q1 is connected with power supply, drain the first resistor R3 groups for passing through and connecing
It is connected with controlled IGBT gate pole；
The breaking circuit includes the first NMOS tube Q2, the first NMOS tube Q2 by second resistance R2 from the driving optocoupler
Receive cut-off signals, while the source electrode of the first NMOS tube Q2 connects negative supply, the second resistance group that passes through and connect of draining with
Controlled IGBT gate pole connection.
5. IGBT drive circuit as claimed in claim 1, it is characterised in that the saturation pressure down detection circuit includes, first
Port and second port, colelctor electrode, the emitter-base bandgap grading of the first port and second port respectively with controlled IGBT are connected, for detecting
Voltage across poles between controlled IGBT colelctor electrode and emitter-base bandgap grading；
Also include, the first diode D1, the second diode D2, the first voltage-regulator diode ZD1, the second voltage-regulator diode ZD2, the 3rd
Resistance R3, the 4th resistance R4 and the first electric capacity C1；
The negative pole of the first diode D1 is connected with first port, second port, and positive pole and the first voltage-regulator diode ZD1 are just
Pole is connected, the first voltage-regulator diode ZD1 negative pole by 3rd resistor R3 with and connect the first electric capacity C1, the second diode D2,
Second voltage-regulator diode ZD2 connections, wherein, it is connected with the second diode D2 negative poles and the second voltage-regulator diode ZD2 negative poles；
The negative pole of the first voltage-regulator diode ZD1 also passes through 3rd resistor R3, the 4th resistance R4 and the switch driving circuit
Output end connection.
6. IGBT drive circuit as claimed in claim 1, it is characterised in that the soft breaking circuit includes the second NMOS tube
Q3, the second NMOS tube Q3 receive soft switching signal by the 5th resistance R5 from the driving optocoupler, while described second
NMOS tube Q3 source electrode connects negative supply, and error of omission connects controlled IGBT gate pole by the 6th resistance R6.
7. IGBT drive circuit as claimed in claim 1, it is characterised in that the switch driving circuit, soft breaking circuit and
It is additionally provided with the first gate pole protection circuit between controlled IGBT, the first gate pole protection circuit includes the 3rd diode D3, the
Seven resistance R7, the 3rd voltage-regulator diode ZD3 and the 4th voltage-regulator diode ZD4；
The positive pole of the 3rd diode D3 is connected with the output end of the switch driving circuit, soft breaking circuit, negative pole and electricity
Source is connected；
Described 7th resistance one end is connected with the output end of the switch driving circuit, soft breaking circuit, other end ground connection；
The 3rd voltage-regulator diode ZD3 and the 4th voltage-regulator diode ZD4 differential concatenations, wherein, the 3rd voltage-regulator diode ZD3's
Negative pole is connected with the output end of the switch driving circuit, soft breaking circuit, the 4th voltage-regulator diode ZD4 negative poles ground connection.
8. IGBT drive circuit as claimed in claim 4, it is characterised in that also including dynamic active clamping protective circuit, institute
The input for stating dynamic active clamping protective circuit is connected with controlled IGBT colelctor electrode, the first output end and the switch drive
The output end connection of circuit, the second output end is connected with the input of the breaking circuit；For whether detecting collector voltage
Beyond predetermined threshold value, when beyond threshold value, the voltage is reduced.
9. IGBT drive circuit as claimed in claim 8, it is characterised in that the dynamic active clamping protective circuit include by
First voltage-regulator diode group of the voltage-regulator diode composition that at least two is concatenated in the same direction, the first voltage-regulator diode group is with being controlled
IGBT colelctor electrode connection, the negative pole of voltage-regulator diode therein is input, just extremely output end；
The output end of the first voltage-regulator diode group is connected with the 3rd NMOS tube Q4 drain electrode；The grid of the 3rd NMOS tube Q4
Pole is connected with the output end of a delay circuit, and the input of the delay circuit and the output end of switch driving circuit are connected；
Also include the second voltage-regulator diode group of the voltage-regulator diode composition that at least two is concatenated, the second voltage-regulator diode group
In voltage-regulator diode negative pole be input, just extremely output end；The second voltage-regulator diode group and the 3rd NMOS tube
Q4 simultaneously connects；Its input is connected with the output end of the first voltage-regulator diode group, and its output end and the 3rd NMOS tube Q4 source electrode connect
Connect；
The output end of the second voltage-regulator diode group also passes through the 4th diode D4, the 8th resistance R8 and the switch of concatenation
The output end connection of drive circuit；
The output end of the second voltage-regulator diode group also passes through the 5th diode D5, the 9th resistance R9 and the 4th NMOS tube Q5
Grid is connected；4th NMOS tube Q5 source electrode connects negative supply, and drain electrode is connected by the input of the tenth resistance R10 and breaking circuit
Connect.
10. IGBT drive circuit as claimed in claim 9, it is characterised in that the grid of the 4th NMOS tube Q5 with it is described
The second gate pole protection circuit is additionally provided between negative supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720013677.8U CN206490661U (en) | 2017-01-06 | 2017-01-06 | Igbt drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720013677.8U CN206490661U (en) | 2017-01-06 | 2017-01-06 | Igbt drive circuit |
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|---|---|
| CN206490661U true CN206490661U (en) | 2017-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720013677.8U Withdrawn - After Issue CN206490661U (en) | 2017-01-06 | 2017-01-06 | Igbt drive circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106788367A (en) * | 2017-01-06 | 2017-05-31 | 四川埃姆克伺服科技有限公司 | A kind of IGBT drive circuit |
| CN107994889A (en) * | 2018-01-25 | 2018-05-04 | 湘潭开元机电制造有限公司 | A kind of IGBT detection circuits and protection circuit |
| CN110501625A (en) * | 2019-09-12 | 2019-11-26 | 荣信汇科电气技术有限责任公司 | A kind of IGBT saturation tube voltage drop on-line measurement circuit |
| CN112566311A (en) * | 2020-12-01 | 2021-03-26 | 陕西亚成微电子股份有限公司 | Multi-segment linear LED drive control method and circuit |
-
2017
- 2017-01-06 CN CN201720013677.8U patent/CN206490661U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106788367A (en) * | 2017-01-06 | 2017-05-31 | 四川埃姆克伺服科技有限公司 | A kind of IGBT drive circuit |
| CN106788367B (en) * | 2017-01-06 | 2023-06-13 | 四川埃姆克伺服科技有限公司 | IGBT driving circuit |
| CN107994889A (en) * | 2018-01-25 | 2018-05-04 | 湘潭开元机电制造有限公司 | A kind of IGBT detection circuits and protection circuit |
| CN110501625A (en) * | 2019-09-12 | 2019-11-26 | 荣信汇科电气技术有限责任公司 | A kind of IGBT saturation tube voltage drop on-line measurement circuit |
| CN110501625B (en) * | 2019-09-12 | 2024-03-08 | 荣信汇科电气股份有限公司 | On-line measuring circuit for voltage drop of IGBT saturation tube |
| CN112566311A (en) * | 2020-12-01 | 2021-03-26 | 陕西亚成微电子股份有限公司 | Multi-segment linear LED drive control method and circuit |
| CN112566311B (en) * | 2020-12-01 | 2022-01-25 | 陕西亚成微电子股份有限公司 | Multi-segment linear LED drive control method and circuit |
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