CN201571032U - Drive board for power semiconductor element - Google Patents
Drive board for power semiconductor element Download PDFInfo
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- CN201571032U CN201571032U CN2009201742573U CN200920174257U CN201571032U CN 201571032 U CN201571032 U CN 201571032U CN 2009201742573 U CN2009201742573 U CN 2009201742573U CN 200920174257 U CN200920174257 U CN 200920174257U CN 201571032 U CN201571032 U CN 201571032U
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- drive plate
- power semiconductor
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Abstract
The utility model discloses a drive board for a power semiconductor element, which is provided with a controller, the drive board is provided with a first adjustable resistor which is connected with the controller and an output end and is used for adjusting the driving voltage-generated current in the grid, the first adjustable resistor can be adjusted to at least two different resistance values, the first resistance value limits the rise of the grid-collector voltage or grid-drain voltage of the semiconductor element at a maximum allowable voltage change rate predefined by the power semiconductor element, and the second resistance value is defined close to zero ohm. The drive board intelligently protects the power semiconductor element by adjusting the resistance value of the resistor connected with the grid, thus greatly prolonging the service life of the power semiconductor element.
Description
Technical field
The utility model relates to a kind of high power electric elements, relates in particular to a kind of drive plate at a power semiconductor IGBT (igbt).
Background technology
The basic difficult problem that the utility model is paid close attention to will be below by setting forth based on the example of an ac voltage rectifier device.
The revolution of three phase electric machine is related with the fixed-frequency of the alternating voltage that drives three phase electric machine.The sine voltage of the variable frequency that this is required produces by frequency converter.The direct voltage that inserts is modeled into sine voltage according to pulse-width modulation process based on suitable pulsewidth sequence.This frequency converter IGBT conversion dc voltage.
The structure of IGBT makes an IGBT have a so-called parasitic diode (backward diode).(see figure 8) is that inverse parallel is connected with the main current path of IGBT.Therefore, keep this parasitic diode under the situation of driving voltage can not influence the conducting behavior of IGBT in main current path.
But should be noted that the characteristic of this parasitic diode in the IGBT switching process.This parasitic diode has very big electric capacity, and this must be poured off by branch when switch, and this process is also referred to as the rectification of this parasitic diode.This parasitic diode is keeping conducting state when shunting.
In this frequency converter, have two IGBT to link to each other with DC power supply, and node and load between these two IGBT link to each other as three phase electric machine with series system.These two IGBT are the switch that is reversed, and have only among these two IGBT one to keep conducting to be connected with a utmost point of direct voltage source like this under perfect condition forever.The parasitic diode of that IGBT that just has been blocked keeps conducting in rectification continues the cycle in the time of the IGBT switch.This will form short circuit between the two poles of the earth of direct voltage source, this can damage and just be access in path, also just say to be switched on IGBT.(see figure 9)
Therefore the manufacturer of IGBT proposes, and adds the series resistance RG of a 1-10 ohm at the grid of IGBT.The electric capacity of this and grid lumps together has formed delay device (RC-circuit).Therefore this resistance be selected as the commutating period that the stream time of unloading of grid capacitance will be longer than parasitic diode when the IGBT conducting.Short circuit has just been avoided like this.
By series resistance the shunting of grid capacitance has been caused significant loss, at first on frequency converter, it is with about 10 KHz repetition rate switch I GBT.
Except the ohmic value of series resistance, this switch behavior is also determined by the stray inductance of supply line.So just formed a low-pass filtering, made the frequency of switching signal reduce and unnecessarily postponed switching signal.Therefore, supply lines must be shorter.Just therefore to be placed near the grid according to this series resistance of typical way and drive plate like this.Because the heat load of the drive plate that hot semiconductor element causes can cause the reduction in the unusual of switch behavior and drive plate useful life.
The utility model content
Technical problem to be solved in the utility model is that the drive plate that power device damages in the circuit that can avoid above-mentioned in a kind of work and the circuit will be provided.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is as follows:
A kind of drive plate of power semiconductor has a controller, and produce a drive current and come this power semiconductor of conducting,
One for the port of export (3,23,44,54) of outputting drive voltage to the grid of this power semiconductor,
Described drive plate is provided with first adjustable resistance (7,24,43,53) that connects this controller (5,21,41,51) and output (3,23,44,54), is used for regulating the electric current that driving voltage produces at grid,
Described first adjustable resistance (7,24,43,53) can be adjusted at least on two different resistances, first resistance is limited to the rising of the grid-collector voltage of this semiconductor element or gate-to-drain voltage on the predefined maximum voltage changing rate that allows of this power semiconductor, and second resistance is defined near zero ohm.
For drive voltage level is incorporated into grid, a lead can be connected on the output of drive plate.The separation of drive plate and power semiconductor is placed and has been protected drive plate not to be subjected to the influence of the heat effect that the power loss by power semiconductor produces.
In a specific design, controller is arranged on first resistance to first adjustable resistance by the rising edge of a drive voltage level, after the delay of a Preset Time this first adjustable resistance is transferred to second resistance.First resistance has guaranteed that this power semiconductor just can conducting after the approaching or complete rectification of that parasitic diode.Grid will be enhanced with the mode that this series resistance is bypassed or is set near zero ohm in order to the discharge of this power semiconductor of conducting after the given time period.
This special digitial controller is according to this series resistance of Characteristics Control of power semiconductor.Therefore, this series resistance is matched with the operating state of this power semiconductor.So just can obtain the ON time of the weak point of an optimum.This control is configured to such type, does not all have overvoltage or excessive electric current to flow through from main current path any time.This controller can show a model of the dynamic behaviour of this power semiconductor thus.This model emphasis has been described the switching characteristic of that parasitic diode.This model provides characteristic parameter by the manufacturer of power component usually.The controller that uses a model can calculate the mode of operation of power semiconductor in advance.Correspondingly, also can go check before resistance change, how the mode of operation of power semiconductor will change.
Further, this drive plate also is provided with one and is connected the electric current that detects by this emitter with the emitter of described power semiconductor and changes detection means, the other end that described electric current changes detection means is connected with described drive plate by comparator device, and it is made response and provide the control signal that first heightens the first adjustable electric resistance when variation surmounts a positive threshold values to electric current.
Emitter will be represented with drain electrode in a fet power semiconductor element.If unpredictalbe behavior of this power semiconductor takes place, this further structure can be regarded as a kind of safeguard measure.The imprevision here is meant a kind of uncertain behavior of dynamic model of passing through.Possible reason is such as an interfering power supply, the variation of the resistance of a resistive load in main current path.
Based on constituted mode, the described comparator device of this drive plate setting is made response when variation is lower than a negative threshold values to emitter current and is provided second control signal of the first adjustable electric resistance being reduced to zero ohm small resistor.
Further, a concrete design code, also disposed second adjustable resistance in order to regulate this driving voltage at the induced current that emitter produces, this second adjustable resistance is used for connecting described controller and the output that is connected with the power semiconductor emitter.
One further develops and has stipulated that also drive plate also is provided with a voltage detection device that is used for detecting described power semiconductor collector voltage, voltage detection device one end links to each other with the power semiconductor collector electrode, the other end links to each other with controller, and controller provides the control signal that a control signal improves the resistance of this first adjustable resistance when collector voltage surmounts the permission voltage of a maximum.
The minimum resistance of first adjustable resistance of described drive plate promptly is lower than 10 milliohms near 0 ohm.
Above-mentioned controller (5,21,41,51) is a microprocessor.It goes out the mode of operation of this power semiconductor based on a Model Calculation of the dynamic behaviour of this power semiconductor and based on that first adjustable resistance of this setting state.
Above-mentioned drive plate can be realized the process of conducting power semiconductor described in the utility model, and its step is as follows:
Regulate first adjustable resistance to first resistance;
Positive driving voltage of the grid of supply power semiconductor element; And
Resistance with first adjustable resistance after the parasitic diode rectification of power semiconductor drops to 0 ohm.
The most basic in a switching process measure just is this series resistance, i.e. first resistance, and it all must not before the rectification fully at this parasitic diode.After its typical switching process, it will be blocked fully, just can not exist because parasitic diode causes risk of short-circuits.Accordingly, this moment, grid can discharge by quicker quilt.Such benefit be one faster switch become possibility.The commutation cycle of parasitic diode can preestablish according to the characterisitic parameter that the power device manufacturer provides.
Particularly, the starting point of commutation cycle can be decided to be that time point when the variation of collector current surmounts a positive threshold values, and with the end point of commutation cycle location that time point when the variation of collector current is lower than a negative threshold values.Replace a former commutation cycle that fixes default representative value as parasitic diode, based on the commutation cycle that further develops like this can Dynamic Definition, that time point when the variation of collector current is surmounted a positive threshold values is as the starting point of commutation cycle (T), and that time point when variation of collector current is lower than a negative threshold values is defined as the end point of commutation cycle (T).Collector electrode is designated the incoming end of power semiconductor, and it is normally as the input of main current path, and this input is identified as source electrode in the field effect power semiconductor.Commutation cycle of being modified when the default commutation cycle of power semiconductor, driving voltage was lowered when having surpassed a default limit.So just can before big damage, keep turn-offing.According to further research, that first adjustable resistance will be transferred to before it is transferred to first resistance near zero ohm, and what be transfused on grid is the driving voltage of bearing.The input of negative voltage makes this semiconductor element be in default blocking state.Yu She allowable limit may offset and avoid the short circuit by these allowable limit generations in the different switching time of many power semiconductors in addition.
When using blocking-up of the power semiconductor that above-mentioned device realizes, by first adjustable resistance being transferred to, and be preferably in and supply with a negative driving voltage on the grid near zero ohm.
The adjusting of the resistance by being docked at grid intelligently of the drive plate of power semiconductor of the present utility model realized the power semiconductor protection, prolonged power semiconductor useful life greatly.
Description of drawings
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent, below in conjunction with accompanying drawing embodiment of the present utility model is elaborated, wherein:
Fig. 1 is the schematic diagram of first kind of constituted mode of drive plate of the utility model power semiconductor;
Fig. 2 is in order to demonstrate the block diagram of a basic difficult problem of the present utility model;
Fig. 3 a, 3b are switching signal and the voltage signal related with Fig. 2;
Fig. 4 is the schematic diagram of second kind of constituted mode of drive plate of the present utility model;
Fig. 5 a, 5b are based on the switching signal and the resistance variations of first kind of constituted mode;
Fig. 6 is the schematic diagram of the third constituted mode of drive plate of the present utility model;
Fig. 7 is the schematic diagram of the 4th kind of constituted mode of drive plate of the present utility model;
Fig. 8 is the organigram of IGBT; Fig. 9 is a frequency converter IGBT circuit diagram.
Embodiment
A drive plate 1 of giving IGBT 2 usefulness based on first kind of constituted mode has been showed in Fig. 1 Central Plains reasoningly.The main current path of IGBT 2 flows to its emitter E from its collector electrode C.This main current path will be as carrying be controlled by the voltage on the grid G that is added in this IGBT 2.This is effective equally such as the power MOSFET of a vertical configuration to a power MOSFET, but its collector electrode is identified as source electrode, and emitter is identified as drain electrode.But this only relates to the name term of this power semiconductor.This power semiconductor is consistent with the exclusive characteristic of all essence of drive plate 1 on function.Therefore will substitute other power semiconductor with an IGBT below describes this drive plate 1.
Have controller 5 on the drive plate 1, it can for example be realized by microprocessor.Controller 5 produces a driving voltage, and it is amplified by output prime amplifier 6 targetedly.Usually, this driving voltage is blocked 2, one+10 to+15 volts of the IGBT voltages in interval with 0 volt and is come conducting IGBT 2, is that a negative voltage makes and turn-offs IGBT 2 especially hastily and become possibility in the time of if necessary.Single voltage can produce in controller 5 and conversion in prime amplifier 6.At this moment, prime amplifier 6 has amplified voltage level a predetermined multiple and has formed a current source with minimum internal resistance if necessary.But can an integrated controlled voltage source in prime amplifier 6, it produces according to the control signal of controller 5 and is used for the voltage of expectation of switch I GBT2.
Between prime amplifier 6 and output 3, disposed one adjustable controlled in other words first adjustable 7.This first adjustable 7 is regulated according to the control signal 8 of controller 5.Resistance 7 has at least two different resistances.One is zero ohm or a few milliohm.So fundamentally between the grid G of prime amplifier 6 and IGBT 2, provided a very low-impedance connection.Second resistance of first adjustable resistance 7 is equivalent to a series resistance, promptly is the series resistance of grid G by the manufacturer of IGBT 2 suggestion.Usually, such resistance is in 1 to 10 ohm of scope.First adjustable resistance 7 has the other resistance between above-mentioned two values, so that realize a variation progressively from 0 ohm of resistance of advising to the databook of this IGBT.
Below the importance of adjustable series resistance just is described by means of Fig. 2 and Fig. 3.Principle must have been described the inductance of a three phase electric machine 10 among Fig. 2, and therefore it have electric current to pass through motor 10 by voltage source 11 power supplies.Will study like this, when IGBT 14 is blocked, how system will operate when IGBT 13 is switched on simultaneously.The grid G voltage U that in Fig. 3 a, has shown IGBT 13
GVariation.At time point t1, IGBT 13 is switched on.Fig. 3 b has shown the electric current I by the emitter of IGBT 13
EThis electric current starts from ON time point t1 and rises to a maximum I
Max, then drop to I
SollElectric current I
SollIt is expectation current value by inductance 10 and IGBT 13.But emitter current I
ERise to I
MaxBe worthless, this may cause damaging IGBT13.The reason that emitter current increases is except that by the electric current of inductance 10, also to have the electric current of the parasitic diode 16 that flows through IGBT 14.After turn-offing IGBT 14, parasitic diode 16 needs a time interval T, sets up what a barrier layer until it.Till this moment, parasitic diode 16 all is conducting.This time interval, T also was identified as the commutation cycle.
In the turn on process of IGBT 13, it also have one sizable, promptly obviously greater than 0.1 ohm internal resistance.The big emitter current I that this internal resistance and that are not expected
ECan cause very large energy consumption together on IGBT 13, this can cause IGBT to damage or the lost of life.
This damage of IGBT 13 can not avoided by hard conducting by IGBT 13.With the grid voltage of the rising step by step U shown in Fig. 3 a
GTo its maximum I
MaxRelative is that this maximum is to be accompanied by (shown in the dotted line) that a time delay reaches.This postpones to be equivalent in fact commutation cycle T.Guaranteed that in this way IGBT 13 only just is switched on when parasitic diode 16 reaches blocking state.
Below this section explanation how to select the resistance of series resistance:
The slow growth of grid voltage will combine with the grid capacitance of IGBT 13 by the series resistance or first adjustable resistance 7 and reach.This series resistance should be selected as follows, and promptly the low-pass filtering element of forming by this series resistance and grid capacitance can provide the time delay of expection.Can from the databook of IGBT, directly get the value of a series resistance.The professional provides the electric capacity of grid capacitance and parasitic diode, so that can calculate the resistance of series resistance at a scope of application.
Showed the 2nd kind of constituted mode on Fig. 4 principle ground.Drive plate 20 has an output 21, controller 22, an output amplifier 23 and an adjustable resistance 24.Can be to output amplifier 23 and output 21 referring to the 1st kind of constituted mode.
This controller has a driving voltage and produces device 25 and a trigger equipment 26.Trigger equipment 26 or timed unit send control command to voltage generator spare 25, but make the driving voltage of the grid G of a conducting IGBT 2 of its output.Here, the voltage in+10 volts to+15 volts scopes is suitable for.Simultaneously, trigger equipment 26 sends a pulse to time delay unit 27,28,29.
The time delay of single retardation element can be determined or fixedly installs by non-essential resistance/condenser network by the software pre-programmed.In addition, single switch element 30,31,32 also can be turned off when other switch elements 30,31,32 just are being switched on.Resetting of switch element 30,31,32 can realize by retardation element 27,28,29 or by a no retardation element and suitable control signal equally.The resistance of single resistance 33,34,35 can be identical or different.
With grid voltage U
GThe variation of resistance of corresponding first adjustable resistance 24 of cross directional variations in Fig. 5 a and 5b, schematically shown.Conducting begins at time point t2, at this moment grid voltage U
GBe set to a negative voltage, on-1.5 volts.This is selectable, the unexpected short circuit of avoiding single IGBT to cause owing to bad synchro switch when power transfer.Rise to the positive voltage value of enough conducting IGBT at time point t3 grid voltage.Simultaneously or more before this first adjustable resistance is adjusted to predetermined series impedance R
1This first adjustable resistance remains on resistance R usually in the commutation cycle of parasitic diode T
1On.(from time point t4) resistance value will be dropped to the very little resistance in 0 ohm or several Bos Europe then.This can be to jump into or stepping realizes.
Shown in Figure 6, the third constituted mode of drive plate 40 has schematically been showed in Fig. 6.This drive plate 40 has a controller 41,42, one first adjustable resistances 43 of output amplifier and an output 44, and their structure should be identical with the example of the constituted mode of describing before.In addition, drive plate 40 also has an electric current variation detection means 45.Its two inputs are connected with the emitter E of IGBT 2 and the auxiliary emitter electrode E2 of IGBT 2.The emitter E of IGBT 2 has large-area joint face and the screw thread or the screw that are used for being connected lead.The inner lead that is connected to this joint face in this joint face and the IGBT has formed first inductance.Provide a so-called auxiliary emitter electrode to most of IGBT 2 in addition, it can directly divide the voltage that pours off on emitter by the lead of a weak point.The short lead of this root has formed second inductance, and its value generally goes up can be different with first inductance.This can be used to measure electric current and change.Electric current by IGBT has changed, and is keeping different voltage levels at short notice on emitter E and auxiliary emitter electrode E2.This voltage difference will change detection means 45 by electric current and discern.
A comparator device 46 is connected electric current and changes the variation of monitoring electric current between detection means 45 and the controller 41.When electrorheological dissolves present IGBT 2 conductings.Comparison diagram 3b, this electric current changes at first has a positive symbol that negative symbol is arranged then.As emitter current I
EVariation when reaching a positive threshold values, this is analyzed comparator device 46 and will be triggered first.This analysis comparator device 46 begins to wait for emitter current I after triggering for the first time
EVariation be lower than a negative threshold values.If selected suitable positive threshold values and negative threshold values, the time interval between triggering for the first time and triggering for the second time should be corresponding to commutation cycle T.Along with second triggering, analyze comparator device 46 and send a control signal to controller 41.Controller 41 is regulated 43 to 0 ohm of first adjustable resistances.
The commutation cycle T that determines by comparator device 46 can compare with the commutation cycle of an expection.The commutation cycle of this expection can be determined from the characteristic handbook that for example supplier of IGBT 2 provides.If occur significant deviation here will be that IGBT 2 will block because the action of the mistake of IGBT causes.
The 4th kind of constituted mode having showed this invention in Fig. 7, it is specially adapted to the situation that IGBT 2 turn-offs.This drive plate has 52, one first adjustable resistances 53 of 51, one output amplifiers of a controller and an output 54 that is connected with the grid G of IGBT 2 as foregoing constituted mode.Then be linked in sequence in addition second output amplifier 55, second adjustable resistance 56 and second output 57 of controller 51.This output 57 is connecting emitter or the auxiliary emitter electrode of IGBT 2.Be noted that when turn-offing an inductive load L this can produce the very big voltage with respect to emitter at collector electrode.If exceeding critical threshold values, this voltage just may damage IGBT 2.What therefore take usually is that this IGBT 2 promptly turn-offs according to a step function, but its ducting capacity is reduced on a time period continuously.This is also referred to as soft shutoff.This first adjustable resistance 53 just can be set to a default resistance like this.The combination of this default resistance and grid capacitance has just realized the delay of expectation and the continuity shutoff of IGBT like this.
Turn-off the most fast and will pass through step function, such as reaching by the negative voltage that on grid, adds a quick decline.At this moment to be adjusted to 0 ohm be rational to first adjustable resistance 53.In order overvoltage not occur at the collector electrode of IGBT2, the voltage on the collector electrode will be monitored by voltage detection device 58.When voltage exceeded a critical threshold values, voltage detection device 58 provided a control signal and goes to controller 51, and therefore it can be adjusted to first adjustable resistance 53 and be not equal to a value of 0 ohm.
A kind of other mode of quicken turn-offing is by with emitter, and particularly the voltage of auxiliary emitter electrode is transferred to about 0 volt.This will be by second output amplifier of carrying before, and realization is brought in second adjustable resistance and second output.Second adjustable resistance will be regulated by controller 51 equally.This can realize by the signal of considering voltage detection device 58.
It is to place a passive protection switch that constitutes with the zener of switch in order between collector electrode and grid that another kind prevents in the possibility that produces overvoltage on the collector electrode C.These in order the puncture voltage of the zener 59 of switch specially be configured to be lower than IGBT 2 and can produce the critical threshold voltage that damages.When arriving the puncture voltage of zener, can trigger by detection means 58 extraly, first adjustable resistance 53 is regulated to high resistance (that is to say several megaohms).
This controller can have a microprocessor 61.Can summarize the model of IGBT in this controller, it has described the rectification behavior of dynamic the switch behavior, particularly parasitic diode of IGBT emphatically.This controller can calculate the state of this IGBT and parasitic diode in advance thus.This has just guaranteed that this series resistance can be mated the characteristic curve of IGBT ideally and be reduced to 0 ohm as early as possible.
Claims (7)
1. the drive plate of a power semiconductor (1,20,40,50) has a controller (5,21,41,51), and produce a drive current and come this power semiconductor of conducting,
One for the port of export (3,23,44,54) of outputting drive voltage to the grid of this power semiconductor, it is characterized in that:
Described drive plate is provided with first adjustable resistance (7,24,43,53) that connects this controller (5,21,41,51) and output (3,21,44,54), is used for regulating the electric current that driving voltage produces at grid,
Described first adjustable resistance (7,24,43,53) can be adjusted at least on two different resistances, first resistance is limited to the rising of the grid-collector voltage of this semiconductor element or gate-to-drain voltage on the predefined maximum voltage changing rate that allows of this power semiconductor, and second resistance is defined near zero ohm.
2. drive plate according to claim 1 is characterized in that: for driving voltage is incorporated into grid, a lead (4) can be connected on the output of drive plate (1,20,40,50) and between the grid.
3. drive plate according to claim 1, it is characterized in that: this drive plate also is provided with one and is connected with the emitter of described power semiconductor and detects the electric current that the electric current by this emitter changes and change detection means (45), the other end that described electric current changes detection means (45) is connected with described drive plate by comparator device (46), it changes emitter current makes response and provides the control signal that first heightens the first adjustable electric resistance (43) when surmounting a positive threshold values, simultaneously emitter current is changed and makes response and provide second control signal of the first adjustable electric resistance being reduced to zero ohm when being lower than a negative threshold values.
4. according to the described drive plate of arbitrary claim in the claim 1 to 3, it is characterized in that:
Described drive plate also is provided with one can be by the output (57) of the emitter of described power semiconductor connection, in order to regulate described driving voltage, also disposed another at described drive plate and be used for connecting second adjustable resistance (56) of described controller (51) and the described output that is connected with the emitter of power semiconductor (57) at the induced current that emitter produces.
5. according to the described drive plate of arbitrary claim in the claim 1 to 3, it is characterized in that:
Described drive plate also is provided with a voltage detection device (58) that is used for detecting described power semiconductor collector voltage, voltage detection device (58) one ends link to each other with the power semiconductor collector electrode, the other end links to each other with controller (51), and controller (51) provides a control signal in order to the resistance that improves first adjustable resistance (53) when collector voltage surmounts the permission voltage of a maximum.
6. according to the described drive plate of arbitrary claim in the claim 1 to 3, it is characterized in that: the minimum resistance of first adjustable resistance of described drive plate promptly is lower than 10 milliohms near 0 ohm.
7. according to the described drive plate of arbitrary claim in the claim 1 to 3, it is characterized in that: described controller (5,21,41,51) is a microprocessor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201742573U CN201571032U (en) | 2009-09-18 | 2009-09-18 | Drive board for power semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201742573U CN201571032U (en) | 2009-09-18 | 2009-09-18 | Drive board for power semiconductor element |
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| Publication Number | Publication Date |
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| CN201571032U true CN201571032U (en) | 2010-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009201742573U Expired - Lifetime CN201571032U (en) | 2009-09-18 | 2009-09-18 | Drive board for power semiconductor element |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108075755A (en) * | 2016-11-11 | 2018-05-25 | 台达电子工业股份有限公司 | Power module and its control method |
| CN116317480A (en) * | 2023-03-28 | 2023-06-23 | 重庆大学 | Gate drive circuit for improving overload of power device by reducing gate resistance |
-
2009
- 2009-09-18 CN CN2009201742573U patent/CN201571032U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108075755A (en) * | 2016-11-11 | 2018-05-25 | 台达电子工业股份有限公司 | Power module and its control method |
| CN108075755B (en) * | 2016-11-11 | 2021-07-06 | 台达电子工业股份有限公司 | Power module and control method thereof |
| CN116317480A (en) * | 2023-03-28 | 2023-06-23 | 重庆大学 | Gate drive circuit for improving overload of power device by reducing gate resistance |
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Granted publication date: 20100901 |