CN108075755B - Power module and control method thereof - Google Patents
Power module and control method thereof Download PDFInfo
- Publication number
- CN108075755B CN108075755B CN201610993854.3A CN201610993854A CN108075755B CN 108075755 B CN108075755 B CN 108075755B CN 201610993854 A CN201610993854 A CN 201610993854A CN 108075755 B CN108075755 B CN 108075755B
- Authority
- CN
- China
- Prior art keywords
- current
- power switch
- electrically coupled
- gate
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
Abstract
The invention provides a power module which comprises a gallium nitride power switch and a driving circuit. The GaN power switch includes a drain, a source, and a gate. The driving circuit comprises an input end and an output end. The output end of the driving circuit is electrically coupled with the grid of the gallium nitride power switch through the external resistor, and the current of the grid of the gallium nitride power switch is changed by adjusting the resistance value of the external resistor so as to control the on-off speed of the gallium nitride power switch. The power module can adjust the grid current of the gallium nitride power switch through the resistance value of the external resistor, and further adjust the on-off speed of the gallium nitride power switch, so that the electromagnetic compatibility of a terminal product is improved, and the performance of the gallium nitride power switch is improved.
Description
Technical Field
The present invention relates to a power module and a method for controlling the power module, and more particularly, to a power module capable of adjusting a switching speed and a method for controlling the power module.
Background
As a typical representative of the third generation semiconductor materials, a wide bandgap semiconductor gallium nitride (GaN) has excellent properties that many conventional silicon materials do not have, and is an excellent semiconductor material for high-frequency, high-voltage, high-temperature and high-power applications.
However, the existing power modules using GaN power semiconductor devices cannot externally adjust the switching speed of the power transistor, which is very unfavorable for the electromagnetic compatibility of the final product, and also limits the performance of GaN power devices from another perspective.
Therefore, how to improve the existing gan power module and control the switching speed of the gan power module is an important research topic in the field.
Disclosure of Invention
The invention discloses a technical scheme of a power module. The power module includes: a gallium nitride power switch including a drain, a source, and a gate; and the driving circuit comprises an input end and an output end, wherein the output end of the driving circuit is electrically coupled with the grid of the gallium nitride power switch through an external resistor, and the current of the grid of the gallium nitride power switch is changed by adjusting the resistance value of the external resistor so as to control the on-off speed of the gallium nitride power switch.
In some embodiments of the present invention, the power module further comprises: a first pin electrically coupled to the output terminal of the driving circuit; and a second pin electrically coupled to the gate of the gan power switch; the external resistor is electrically coupled between the first pin and the second pin.
In some embodiments of the present invention, the input terminal of the driving circuit is configured to receive an input signal and output a driving voltage to the first pin according to the input signal.
In some embodiments of the present invention, the input signal comprises a pulse width modulation signal or a frequency modulation signal.
Another technical solution of the present invention is a power module. The power module includes: a GaN power switch including a drain, a source and a gate; and a drive circuit including: an input terminal for receiving an input signal; and an output terminal electrically coupled to the gate of the gan power switch; the driving circuit changes the charging current or the discharging current of the driving circuit to the grid of the gallium nitride power switch by adjusting the resistance value of the external resistor so as to control the on-off speed of the gallium nitride power switch.
In some embodiments of the present invention, the driving circuit includes a current control unit for controlling a speed of turning on or off the gan power switch by the driving circuit, and the power module further includes: a first pin electrically coupled to a first end of the current control unit; and a second pin electrically coupled to the second end of the current control unit; the external resistor is electrically coupled between the first pin and the second pin to adjust the magnitude of the charging current or the discharging current of the driving circuit to the gate of the gan power switch.
In some embodiments of the present invention, the input signal comprises a pulse width modulation signal or a frequency modulation signal.
In some embodiments of the present invention, the current control unit comprises: the first driving voltage regulator is electrically coupled to the first pin and used for converting the power supply voltage into a control voltage according to the resistance value of the external resistor; a driver electrically coupled to the first driving voltage regulator and the second pin, for outputting a driving voltage according to the control voltage and the input signal; and a current regulator electrically coupled to the driver for outputting the charging current or the discharging current to the gate of the GaN power switch according to the driving voltage.
In some embodiments of the invention, the current regulator comprises: a pull-up switch, a first end of which is used for receiving the supply voltage, a second end of which is used for outputting the charging current, and a control end of which is used for receiving the driving voltage; and a pull-down switch, a first end of the pull-down switch being electrically coupled to the second pin, a second end of the pull-down switch being configured to output the discharge current, and a control end of the pull-down switch being configured to receive the driving voltage.
In some embodiments of the present invention, the current regulator is configured to adjust an on-state impedance of the pull-up switch and an on-state impedance of the pull-down switch according to the driving voltage.
In some embodiments of the present invention, the driving circuit provides the charging current to the gate of the gan power switch when the driving voltage is a first voltage, and provides the discharging current to the gate of the gan power switch when the driving voltage is a second voltage.
In some embodiments of the present invention, the first driving voltage regulator comprises: a first transistor comprising: a first terminal for receiving the supply voltage; a second end for outputting the control voltage; and a control terminal; and a comparison amplifier comprising: a first input end electrically coupled to the first pin; a second input end electrically coupled to the second end of the first transistor; and an output end electrically coupled to the control end of the first transistor.
In some embodiments of the present invention, the current control unit comprises: the second driving voltage regulator is electrically coupled to the first pin and used for converting the power supply voltage into a regulated power supply voltage according to the resistance value of the external resistor; a driver electrically coupled to the second driving voltage regulator and the second pin for outputting a driving voltage according to the input signal; and a current regulator electrically coupled to the driver and the second driving voltage regulator for outputting the charging current or the discharging current to the gate of the GaN power switch according to the driving voltage and the regulated supply voltage.
In some embodiments of the invention, the current regulator comprises: a pull-up switch, a first end of the pull-up switch being configured to receive the regulated supply voltage, a second end of the pull-up switch being configured to output the charging current, and a control end of the pull-up switch being configured to receive the driving voltage; and a pull-down switch, a first end of the pull-down switch being electrically coupled to the second pin, a second end of the pull-down switch being configured to output the discharge current, and a control end of the pull-down switch being configured to receive the driving voltage.
In some embodiments of the present invention, the current regulator is configured to regulate the magnitude of the charging current and the discharging current according to the regulated supply voltage.
In some embodiments of the present invention, the second driving voltage regulator comprises: a first transistor comprising: a first terminal for receiving the supply voltage; a second terminal for outputting the regulated supply voltage; and a control terminal; and a comparison amplifier comprising: a first input end electrically coupled to the first pin; a second input end electrically coupled to the second end of the first transistor; and an output end electrically coupled to the control end of the first transistor.
In some embodiments of the present invention, when the external resistor has a first resistance value, the driving circuit provides a first charging current to the gate of the gan power switch, and when the external resistor has a second resistance value, the driving circuit provides a second charging current to the gate of the gan power switch, wherein when the first resistance value is greater than the second resistance value, the first charging current is greater than the second charging current; when the external resistor has a third resistance value, the driving circuit provides a first discharge current to the gate of the gan power switch, and when the external resistor has a fourth resistance value, the driving circuit provides a second discharge current to the gate of the gan power switch, wherein when the third resistance value is greater than the fourth resistance value, the first discharge current is greater than the second discharge current.
In some embodiments of the present invention, the gan power switch is turned on at a first turn-on speed when the gate of the gan power switch receives the first charging current, and the gan power switch is turned on at a second turn-on speed when the gate of the gan power switch receives the second charging current, wherein the first turn-on speed is greater than the second turn-on speed when the first charging current is greater than the second charging current.
In some embodiments of the present invention, the gan power switch is turned off at a first turn-off speed when the gate of the gan power switch receives the first discharge current, and the gan power switch is turned off at a second turn-off speed when the gate of the gan power switch receives the second discharge current, wherein the first turn-off speed is greater than the second turn-off speed when the first discharge current is greater than the second discharge current.
Another technical solution of the present invention is a method for controlling a power module. The control method comprises the following steps: adjusting the resistance value of an external resistor; a current control unit in a driving circuit adjusts the charging current or the discharging current of the driving circuit to the grid of the gallium nitride power switch according to the resistance value of the external resistor; and controlling the on-off speed of the gallium nitride power switch by adjusting the charging current or the discharging current, wherein when the charging current or the discharging current is increased, the on-off speed of the gallium nitride power switch is increased, and when the discharging current or the discharging current is decreased, the on-off speed of the gallium nitride power switch is decreased.
In some embodiments of the present invention, the step of adjusting the charging current or the discharging current of the driving circuit to the gate of the gan power switch by the current control unit comprises: adjusting a control voltage according to the resistance value of the external resistor through a first driving voltage regulator; outputting a driving voltage according to the control voltage and an input signal through a driver; and outputting the charging current or the discharging current to the grid of the gallium nitride power switch through a current regulator according to the driving voltage.
In some embodiments of the present invention, the step of adjusting the charging current or the discharging current of the driving circuit to the gan power switch by the current control unit comprises: converting the power supply voltage into regulated power supply voltage by a second driving voltage regulator according to the resistance value of the external resistor; outputting a driving voltage according to an input signal through a driver; and outputting the charging current or the discharging current to the gate of the GaN power switch through a current regulator according to the driving voltage and the regulated supply voltage.
In summary, the power module of the present invention can adjust the charging current or the discharging current by adjusting the resistance of the external resistor, so as to adjust the on-speed and the off-speed of the gan power switch in the power module, thereby improving the electromagnetic compatibility of the terminal product and enhancing the performance of the gan power device.
Drawings
Fig. 1 is a schematic diagram of a power module according to some embodiments of the invention.
Fig. 2 is a schematic diagram of a power module according to another embodiment of the invention.
Fig. 3 is a flowchart illustrating a method for controlling a power module according to some embodiments of the invention.
Fig. 4 is a partial circuit diagram of a driving circuit according to some embodiments of the invention.
Fig. 5 is a partial circuit diagram of a first driving voltage regulator according to some embodiments of the present invention.
Fig. 6 is a flowchart illustrating a method for controlling a power module according to some embodiments of the invention.
Fig. 7 is a partial circuit diagram of a driving circuit according to another embodiment of the invention.
Fig. 8 is a partial circuit diagram of a second driving voltage regulator according to some embodiments of the present invention.
Fig. 9 is a flowchart illustrating a method for controlling a power module according to some other embodiments of the present invention.
Wherein the reference numerals
100. 200 power module
120. 220 gallium nitride power switch
140. 240 drive circuit
242. 243 drive voltage regulator
244. 245 driver
246. 247 current regulator
300 control method
S310 to S330
S322 a-S326 a, S322 b-S326 b
S source electrode
D drain electrode
G grid
PIN1 and PIN2 PIN
Rd external resistor
BGR band gap voltage reference circuit
S1, S2 switch
T1 transistor
C1 Cout capacitor
OP1 comparison amplifier
VSS reference voltage
VDD supply voltage
VD drive voltage
Vg drive voltage
Vdrv control voltage
Vtp supply voltage
I1, I2 Current
PWM input signal
EN ENABLE signal
Detailed Description
The technical solutions of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments, but the embodiments are not provided to limit the scope of the invention, the description of the structural operation is not provided to limit the execution sequence thereof, and any device with equivalent functions generated by the recombination of elements is included in the scope of the invention. Moreover, the drawings are intended to be illustrative only and not to be drawn to scale in accordance with industry standards and conventional practice, and the dimensions of various features may be arbitrarily increased or decreased for clarity of illustration. In the following description, the same elements will be described with the same reference numerals for easy understanding.
The words used in the specification and claims have the ordinary meaning as is accorded to each word described herein, including the plain language used in the art, including all statements herein and equivalents thereof, unless otherwise indicated. Certain terms used to describe the invention are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the invention.
Furthermore, as used herein, the terms "comprising," including, "" having, "" containing, "and the like are open-ended terms that mean" including, but not limited to. Further, as used herein, "and/or" includes any and all combinations of one or more of the associated listed items.
When an element is referred to as being "connected" or "coupled," it can be referred to as being "electrically connected" or "electrically coupled. "connected" or "coupled" may also be used to indicate that two or more elements are in mutual engagement or interaction. Furthermore, although terms such as "first," "second," etc. may be used herein to describe various elements, such terms are used only to distinguish one element or operation from another element or operation described in the same technical terms. Unless the context clearly dictates otherwise, the terms do not specifically refer or imply an order or sequence nor are they intended to limit the invention.
Please refer to fig. 1. Fig. 1 is a schematic diagram of a power module 100 according to some embodiments of the invention. As shown in fig. 1, the power module 100 includes a gan power switch 120 and a driving circuit 140. The gan power switch 120 includes a drain D, a source S, and a gate G. In some embodiments, the source S of the gan power switch 120 is electrically coupled to a reference voltage VSS. The driving circuit 140 includes an input terminal and an output terminal. The output terminal of the driving circuit 140 is electrically coupled to the gate G of the gan power switch 120 through the external resistor Rd. In some embodiments, the power module 100 changes the current of the gate G of the gan power switch 120 by adjusting the resistance of the external resistor Rd, so as to control the on/off speed of the gan power switch 120.
As shown in FIG. 1, in some embodiments of the invention, power module 100 includes PIN PIN1 and PIN PIN 2. PIN1 is electrically coupled to an output of driver circuit 140. PIN2 is electrically coupled to gate G of gan power switch 120. Structurally, the external resistor Rd is electrically coupled between the PIN1 and the PIN 2.
In some embodiments of the present invention, the input terminal of the driving circuit 140 is configured to receive an input signal P and output a driving voltage VD to the PIN1 according to the input signal P. For example, in some embodiments, the input signal P comprises a Pulse Width Modulation (PWM) signal. In some other embodiments, the input signal P comprises a frequency modulation signal. Specifically, the driving circuit 140 receives a supply voltage VDD and a reference voltage VSS. Therefore, the driving circuit 140 can output the driving voltage VD with different voltages according to different input signals P, such as pulse width modulation or frequency modulation.
Therefore, by adjusting the resistance of the external resistor Rd, the current of the gate G of the gan power switch 120 can be adjusted and changed accordingly, so as to control the on/off speed of the gan power switch 120. In this embodiment, when the driving circuit 140 controls the turn-on of the gan power switch 120, the resistance of the external resistor Rd is increased to slow the turn-on speed of the gan power switch; the resistance of the external resistor Rd is reduced to increase the conduction speed of the GaN power switch. When the driving circuit 140 controls the gallium nitride power switch 120 to turn off, the resistance of the external resistor Rd is increased to slow the turn-off speed of the gallium nitride power switch; the resistance of the external resistor Rd is reduced to increase the turn-off speed of the GaN power switch. In other embodiments, when the driving circuit 140 controls the conduction of the gan power switch 120, the resistance of the external resistor Rd is increased to increase the conduction speed of the gan power switch; the resistance of the external resistor Rd is reduced to slow down the on speed of the gan power switch. When the driving circuit 140 controls the gallium nitride power switch 120 to turn off, the resistance of the external resistor Rd is increased to increase the turn-off speed of the gallium nitride power switch; the resistance of the external resistor Rd is reduced to slow down the turn-off speed of the gan power switch.
Please refer to fig. 2 and fig. 2. Fig. 2 is a schematic diagram of a power module 200 according to another embodiment of the invention. As shown in fig. 2, in some embodiments of the invention, the power module 200 includes a gan power switch 220 and a driving circuit 240. The gan power switch 220 includes a drain D, a source S, and a gate G. In some embodiments, the source S of the gan power switch 220 is electrically coupled to a reference voltage VSS. The driving circuit 240 includes an input terminal and an output terminal. Specifically, the input terminal of the driving circuit 240 is used to receive the input signal P. Similar to the embodiment shown in fig. 1, in some embodiments, the input signal P comprises a pulse width modulation signal (PWM). In some other embodiments, the input signal P comprises a frequency modulation signal. The output terminal of the driving circuit 240 is electrically coupled to the gate G of the gan power switch 220.
In some embodiments, the driving circuit 240 includes a current control unit for controlling the on/off speed of the driving circuit 240 to the gan power switch 220. Specifically, the driving circuit 240 adjusts the charging current or the discharging current of the driving circuit 240 to the gate G of the gan power switch 220 through the resistance of the external resistor Rd to control the on/off speed of the gan power switch 240.
As shown in FIG. 2, in some embodiments of the invention, power module 200 also includes PIN1 and PIN 2. Pin1 and PIN2 are each electrically coupled to driver circuit 240. The driving circuit 240 includes a current control unit. Specifically, PIN1 is electrically coupled to a first terminal of the current control unit. PIN2 is electrically coupled to a second terminal of the current control unit. In some embodiments, PIN2 is electrically coupled to a reference voltage VSS. Structurally, the external resistor Rd is electrically coupled between the PIN1 and the PIN2 to adjust the magnitude of the charging current or the discharging current of the driving circuit 240 to the gate G of the gan power switch 220.
Please refer to fig. 3. Fig. 3 is a flowchart illustrating a method 300 for controlling the power module 200 according to some embodiments of the disclosure. For convenience and clarity of illustration, the control method 300 is described with reference to the power module 200 shown in fig. 2, but not limited thereto, and any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. As shown in fig. 3, the control method 300 includes steps S310, S320, and S330.
First, in step S310, the resistance value of the external resistor Rd is adjusted. Next, in step S320, the current control unit in the driving circuit 240 adjusts the charging current or the discharging current of the driving circuit 240 to the gate G of the gan power switch 220 according to the resistance value of the external resistor Rd. Next, in step S330, the speed of turning on or off the gan power switch 220 is controlled by adjusting the charging current or the discharging current. Specifically, when the charging current or the discharging current increases, the on speed or the off speed of the gallium nitride power switch 220 increases, and when the discharging current or the discharging current decreases, the on speed or the off speed of the gallium nitride power switch 220 decreases.
Next, a specific circuit and an operation method for controlling the on/off speed of the gan power switch 220 by the driving circuit 240 by the current control unit in the driving circuit 240 will be described with reference to the drawings. Please refer to fig. 4. Fig. 4 is a partial circuit diagram of the driving circuit 240 according to some embodiments of the invention.
As shown in fig. 4, in some embodiments of the invention, the current control unit within the driver circuit 240 includes a first driver voltage regulator 242, a driver 244, and a current regulator 246. Structurally, the first driving voltage regulator 242 is electrically coupled to the PIN1 for converting the supply voltage VDD into the control voltage Vdrv according to the resistance of the external resistor Rd. The driver 244 is electrically coupled to the first driving voltage regulator 242 and the PIN2, and is used for outputting the driving voltage Vg according to the control voltage Vdrv and the input signal P. The current regulator 246 is electrically coupled to the driver 244, and outputs a charging current I1 or a discharging current I2 to the gate G of the gan power switch 220 according to the driving voltage Vg.
Specifically, in some embodiments of the present invention, current regulator 246 includes a pull-up switch S1 and a pull-down switch S2. The first terminal of the pull-up switch S1 is for receiving the supply voltage VDD, and the second terminal of the pull-up switch S1 is for outputting the charging current I1. The control terminal of the pull-up switch S1 is used for receiving the driving voltage Vg. The first terminal of the pull-down switch S2 is electrically coupled to the PIN2 for receiving the reference voltage VSS. The second terminal of the pull-down switch S2 is used for outputting the discharge current I2, and the control terminal of the pull-down switch S2 is used for receiving the driving voltage Vg. Thus, when the driving voltage Vg is the first voltage, the pull-up switch S1 is turned on, the pull-down switch S2 is turned off, and the driving circuit 240 provides the charging current I1 to the gan power switch 220. On the other hand, when the driving voltage Vg is the second voltage, the pull-up switch S1 is turned off, the pull-down switch S2 is turned on, and the driving circuit 240 provides the discharging current I2 to the gan power switch 220.
Thus, the current regulator 246 can adjust the on-state impedance of the pull-up switch S1 and the on-state impedance of the pull-down switch S2 according to the driving voltage Vg. When the resistance of the external resistor Rd is increased, the voltage of the control voltage Vdrv is also increased by the first driving voltage regulator 242. Therefore, the voltage of the drive voltage Vg is also high. The on-state impedances of the pull-up switch S1 and the pull-down switch S2 are reduced, so that the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate G of the gan power switch 220 is increased, and the switching speed of the gan power switch 220 is increased. In another aspect. When the resistance of the external resistor Rd decreases, the voltage of the control voltage Vdrv is also low by the first driving voltage regulator 242. Therefore, the voltage of the drive voltage Vg is also low. The on-state impedances of the pull-up switch S1 and the pull-down switch S2 are increased, so that the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate G of the gan power switch 220 is reduced, and the switching speed of the gan power switch 220 is reduced.
Specific circuits and operation methods in the first driving voltage regulator 242 will be described with reference to the accompanying drawings. Please refer to fig. 5. Fig. 5 is a partial circuit diagram of the first driving voltage regulator 242 according to some embodiments of the present invention.
As shown in fig. 5, in some embodiments of the present invention, the first driving voltage regulator 242 includes a first transistor T1 and a comparison amplifier OP 1. Structurally, the first transistor T1 includes a first terminal, a second terminal, and a control terminal. The first terminal of the first transistor T1 is for receiving the supply voltage VDD. The second terminal of the first transistor T1 is used for outputting the control voltage Vdrv. The comparison amplifier OP1 includes a first input terminal, a second input terminal, and an output terminal. The first input of the comparison amplifier OP1 is electrically coupled to the PIN 1. The second input terminal of the comparison amplifier OP1 is electrically coupled to the second terminal of the first transistor T1. As shown in fig. 5, in some embodiments, the second input terminal of the comparison amplifier OP1 is further electrically coupled to the second terminal of the first transistor T1 through a Bandgap Reference Circuit (BGR). The bandgap voltage reference circuit is controlled according to the enable signal EN received by the first driving voltage regulator 242. An output terminal of the comparison amplifier OP1 is electrically coupled to the control terminal of the first transistor T1. The external resistor R1 is electrically coupled between the first input terminal of the comparison amplifier OP1 and the second terminal of the first transistor T1. The external resistor Rd and the capacitor C1 are electrically coupled between the first input terminal of the comparison amplifier OP1 and the reference voltage VSS, respectively. The capacitor Cout is electrically coupled between the second terminal of the first transistor T1 and the reference voltage VSS.
In this way, when the resistance of the external resistor Rd is increased, the voltage of the control voltage Vdrv output by the first driving voltage regulator 242 is increased by the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the first driving voltage regulator 242. On the contrary, when the resistance of the external resistor Rd decreases, the voltage of the control voltage Vdrv output by the first driving voltage regulator 242 decreases through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the first driving voltage regulator 242.
Please refer to fig. 6. Fig. 6 is a flowchart illustrating a method 300 for controlling the power module 200 according to some embodiments of the invention. For convenience and clarity of illustration, the control method 300 is described with reference to the driving circuit 240 shown in fig. 4, but not limited thereto, and any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. As shown in fig. 6, in some embodiments, the step S320 of the control method 300 further includes the steps S322a, S324a and S326 a.
First, in step S322a, the control voltage Vdrv is adjusted by the first driving voltage regulator 242 according to the resistance value of the external resistor Rd. Next, in step S324a, the driver 244 outputs the driving voltage Vg according to the control voltage Vdrv and the input signal P. Next, in step S326a, the charging current I1 or the discharging current I2 is output to the gate G of the gallium nitride power switch 220 by the current regulator 246 according to the driving voltage Vg.
Those skilled in the art can directly understand how the control method 300 shown in fig. 6 performs the operations and functions based on the power module 200 shown in fig. 2 and the driving circuit 240 shown in fig. 4, and therefore, the detailed description thereof is omitted here.
Please refer to fig. 7. Fig. 7 is a partial circuit diagram of the driving circuit 240 according to another embodiment of the invention.
As shown in fig. 7, in some embodiments of the present invention, the current control unit in the driver circuit 240 includes a second driver voltage regulator 243, a driver 245, and a current regulator 247. Structurally, the second driving voltage regulator 243 is electrically coupled to the PIN1 for converting the supply voltage VDD into the regulated supply voltage Vtp according to the resistance of the external resistor Rd. The driver 245 is electrically coupled to the second driving voltage regulator 243 and the PIN2, and is used for outputting a driving voltage Vg according to the input signal P. The current regulator 247 is electrically coupled to the driver 245 and the second driving voltage regulator 243 for outputting the charging current I1 or the discharging current I2 to the gate G of the gan power switch 220 according to the driving voltage Vg and the regulated power voltage Vtp.
Similar to the driving circuit 240 shown in fig. 4, in some embodiments of the invention, the current regulator 247 may also include a pull-up switch S1 and a pull-down switch S2. The first terminal of the pull-up switch S1 is for receiving the regulated supply voltage Vtp, and the second terminal of the pull-up switch S1 is for outputting the charging current I1. The control terminal of the pull-up switch S1 is used for receiving the driving voltage Vg. The first terminal of the pull-down switch S2 is electrically coupled to the PIN2 for receiving the reference voltage VSS. The second terminal of the pull-down switch S2 is used for outputting the discharge current I2, and the control terminal of the pull-down switch S2 is used for receiving the driving voltage Vg. Thus, when the driving voltage Vg is the first voltage, the pull-up switch S1 is turned on, the pull-down switch S2 is turned off, and the driving circuit 240 provides the charging current I1 to the gate G of the gan power switch 220. On the other hand, when the driving voltage Vg is the second voltage, the pull-up switch S1 is turned off, the pull-down switch S2 is turned on, and the driving circuit 240 provides the discharging current I2 to the gate G of the gan power switch 220.
Therefore, the current regulator 247 can adjust the charging current I1 or the discharging current I2 output by the current regulator 247 according to the adjusted power supply voltage Vtp. When the resistance of the external resistor Rd is increased, the second driving voltage regulator 243 regulates the voltage of the power supply voltage Vtp to be higher, so that the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate G of the gan power switch 220 is increased, and the switching speed of the gan power switch 220 is increased. In another aspect. When the resistance of the external resistor Rd decreases, the second driving voltage regulator 243 regulates the voltage of the power supply voltage Vtp to be lower, so that the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate G of the gan power switch 220 decreases, and the switching speed of the gan power switch 220 decreases.
Hereinafter, a specific circuit and an operation method in the second driving voltage regulator 243 will be described with reference to the accompanying drawings. Please refer to fig. 8. Fig. 8 is a partial circuit diagram of the second driving voltage regulator 243 according to some embodiments of the present invention.
As shown in fig. 8, in some embodiments of the present invention, the second driving voltage regulator 243 includes a first transistor T1 and a comparison amplifier OP 1. Structurally, the first transistor T1 includes a first terminal, a second terminal, and a control terminal. The first terminal of the first transistor T1 is for receiving the supply voltage VDD. The second terminal of the first transistor T1 is used for outputting the regulated power supply voltage Vtp. The comparison amplifier OP1 includes a first input terminal, a second input terminal, and an output terminal. The first input of the comparison amplifier OP1 is electrically coupled to the PIN 1. The second input terminal of the comparison amplifier OP1 is electrically coupled to the second terminal of the first transistor T1. As shown in fig. 8, in some embodiments, the second input of the comparison amplifier OP1 is further electrically coupled to the second terminal of the first transistor T1 through a Bandgap Reference Circuit (BGR). The bandgap voltage reference circuit is controlled according to the enable signal EN received by the second driving voltage regulator 243. An output terminal of the comparison amplifier OP1 is electrically coupled to the control terminal of the first transistor T1. The external resistor R1 is electrically coupled between the first input terminal of the comparison amplifier OP1 and the second terminal of the first transistor T1. The external resistor Rd and the capacitor C1 are electrically coupled between the first input terminal of the comparison amplifier OP1 and the reference voltage VSS, respectively. The capacitor Cout is electrically coupled between the second terminal of the first transistor T1 and the reference voltage VSS.
In this way, when the resistance of the external resistor Rd is increased, the voltage of the regulated power supply voltage Vtp output by the second driving voltage regulator 243 is increased by the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the second driving voltage regulator 243. On the contrary, when the resistance of the external resistor Rd decreases, the voltage of the regulated power supply voltage Vtp output by the second driving voltage regulator 243 decreases through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the second driving voltage regulator 243.
Please refer to fig. 9. Fig. 9 is a flowchart illustrating a method 300 for controlling the power module 200 according to some other embodiments of the disclosure. For convenience and clarity of illustration, the control method 300 is described with reference to the driving circuit 240 shown in fig. 7, but not limited thereto, and any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. As shown in fig. 9, in some embodiments, the step S320 of the control method 300 further includes the steps S322b, S324b and S326 b.
First, in step S322b, the supply voltage VDD is converted into the regulated supply voltage Vtp by the second voltage regulator 243 according to the resistance value of the external resistor Rd. Next, in step S324b, the drive voltage Vg is output from the input signal P by the driver 245. Next, in step S326b, the charging current I1 or the discharging current I2 is outputted to the gate G of the gan power switch 220 through the current regulator 247 according to the driving voltage Vg and the regulated power supply voltage Vtp.
Those skilled in the art can directly understand how the control method 300 shown in fig. 9 performs the operations and functions based on the power module 200 shown in fig. 2 and the driving circuit 240 shown in fig. 7, and therefore, the detailed description thereof is omitted here.
In this way, with the driving circuit 240 shown in the above embodiments, when the resistance value of the external resistor Rd is increased, the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate G of the gan power switch 220 is increased, and the switching speed of the gan power switch 220 is increased. In another aspect. When the resistance of the external resistor Rd decreases, the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate G of the gan power switch 220 decreases, and the switching speed of the gan power switch 220 decreases.
In other words, when the external resistor Rd has a first resistance, the driving circuit 240 provides the first charging current I1 to the gate G of the gan power switch 220, when the external resistor Rd has a second resistance, the driving circuit 240 provides the second charging current I1 to the gate G of the gan power switch 220, and when the first resistance is greater than the second resistance, the first charging current I1 is greater than the second charging current I1.
Similarly, when the external resistor Rd has a third resistance value, the driving circuit 240 provides the first discharging current I2 to the gate G of the gan power switch 220, when the external resistor Rd has a fourth resistance value, the driving circuit 240 provides the second discharging current I2 to the gate G of the gan power switch 220, and when the third resistance value is greater than the fourth resistance value, the first discharging current I2 is greater than the second discharging current I2.
As such, in some embodiments of the present invention, when the gate G of the gan power switch 220 receives the first charging current I1, the gan power switch 220 is turned on at a first on speed, and when the gate G of the gan power switch 220 receives the second charging current I1, the gan power switch 220 is turned on at a second on speed. When the first charging current I1 is greater than the second charging current I1, the first on speed is greater than the second on speed.
Similarly, in some embodiments of the present invention, the gan power switch 220 is turned off at a first turn-off speed when the gate G of the gan power switch 220 receives the first discharge current I2, and the gan power switch 220 is turned off at a second turn-off speed when the gate G of the gan power switch 220 receives the second discharge current I2. When the first discharge current I2 is greater than the second discharge current I2, the first turn-off speed is greater than the second turn-off speed.
In summary, the power modules 100 and 200 in the embodiments of the disclosure can adjust the charging current I1 or the discharging current I2 by adjusting the resistance of the external resistor Rd, and further adjust the on-speed and the off-speed of the gallium nitride power switches 120 and 220 in the power modules 100 and 200, so as to improve the electromagnetic compatibility of the end product and enhance the performance of the gallium nitride power device.
While the disclosed methods are illustrated and described herein as a series of steps or events, it will be appreciated that the order of the steps or events shown is not to be interpreted in a limiting sense. For example, some steps may occur in different orders and/or concurrently with other steps or events apart from those illustrated and/or described herein. In addition, not all illustrated steps may be required to implement one or more of the aspects or embodiments described herein. Further, one or more steps herein may also be performed in one or more separate steps and/or stages.
It should be noted that the features and circuits in the respective drawings, embodiments and embodiments of the present invention may be combined with each other without conflict. The circuits shown in the drawings are for simplicity and clarity in order to facilitate understanding and are not intended to limit the invention. In addition, the gan power switches 120 and 220, the pull-up switch S1, the pull-down switch S2, the first transistor T1, the comparison amplifier OP1, and the like illustrated in the above embodiments can be implemented in various ways. For example, the pull-up switch S1, the pull-down switch S2, the first Transistor T1, etc. may be implemented by Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect transistors (MOSFETs), or other suitable Semiconductor switching devices, respectively.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made by one skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (16)
1. A power module, comprising:
a gallium nitride power switch including a drain, a source, and a gate; and
a drive circuit, comprising:
an input terminal for receiving an input signal;
an output terminal electrically coupled to the gate of the GaN power switch; and
the current control unit is used for controlling the on-off speed of the driving circuit to the gallium nitride power switch;
a first pin electrically coupled to a first end of the current control unit; and
a second pin electrically coupled to the second end of the current control unit,
wherein the driving circuit changes the magnitude of the charging current or the discharging current of the gate of the GaN power switch by adjusting the resistance value of an external resistor electrically coupled between the first pin and the second pin, and the driving circuit controls the charging current or the discharging current of the gate of the GaN power switch
The current control unit includes:
the first driving voltage regulator is electrically coupled to the first pin and used for converting the power supply voltage into a control voltage according to the resistance value of the external resistor;
a driver electrically coupled to the first driving voltage regulator and the second pin, for outputting a driving voltage according to the control voltage and the input signal; and
and the current regulator is electrically coupled to the driver and used for outputting the charging current or the discharging current to the grid of the gallium nitride power switch according to the driving voltage.
2. The power module of claim 1 wherein the input signal comprises a pulse width modulated signal or a frequency modulated signal.
3. The power module of claim 1 wherein the current regulator comprises:
a pull-up switch, a first end of which is used for receiving the supply voltage, a second end of which is used for outputting the charging current, and a control end of which is used for receiving the driving voltage; and
a first end of the pull-down switch is electrically coupled to the second pin, a second end of the pull-down switch is used for outputting the discharge current, and a control end of the pull-down switch is used for receiving the driving voltage.
4. The power module of claim 3 wherein the current regulator is configured to adjust an on-resistance of the pull-up switch and an on-resistance of the pull-down switch based on the driving voltage.
5. The power module of claim 1, wherein the driving circuit provides the charging current to the gan power switch when the driving voltage is a first voltage, and provides the discharging current to the gan power switch when the driving voltage is a second voltage.
6. The power module of claim 1, wherein the first driving voltage regulator comprises:
a first transistor comprising:
a first terminal for receiving the supply voltage;
a second end for outputting the control voltage; and
a control end; and
a comparison amplifier, comprising:
a first input end electrically coupled to the first pin;
a second input end electrically coupled to the second end of the first transistor; and
an output end electrically coupled to the control end of the first transistor.
7. A power module, comprising:
a gallium nitride power switch including a drain, a source, and a gate; and
a drive circuit, comprising:
an input terminal for receiving an input signal;
an output terminal electrically coupled to the gate of the GaN power switch; and
the current control unit is used for controlling the on-off speed of the driving circuit to the gallium nitride power switch;
a first pin electrically coupled to a first end of the current control unit; and
a second pin electrically coupled to the second end of the current control unit,
wherein the driving circuit changes the magnitude of the charging current or the discharging current of the gate of the GaN power switch by adjusting the resistance value of an external resistor electrically coupled between the first pin and the second pin, and the driving circuit controls the charging current or the discharging current of the gate of the GaN power switch
Wherein the current control unit comprises:
the second driving voltage regulator is electrically coupled to the first pin and used for converting the power supply voltage into a regulated power supply voltage according to the resistance value of the external resistor;
a driver electrically coupled to the second driving voltage regulator and the second pin for outputting a driving voltage according to the input signal; and
and a current regulator electrically coupled to the driver and the second driving voltage regulator for outputting the charging current or the discharging current to the gate of the GaN power switch according to the driving voltage and the regulated supply voltage.
8. The power module of claim 7, wherein the input signal comprises a pulse width modulation signal or a frequency modulation signal.
9. The power module of claim 7 wherein the current regulator comprises:
a pull-up switch, a first end of the pull-up switch being configured to receive the regulated supply voltage, a second end of the pull-up switch being configured to output the charging current, and a control end of the pull-up switch being configured to receive the driving voltage; and
a first end of the pull-down switch is electrically coupled to the second pin, a second end of the pull-down switch is used for outputting the discharge current, and a control end of the pull-down switch is used for receiving the driving voltage.
10. The power module of claim 9 wherein the current regulator is configured to regulate the magnitude of the charging current and the discharging current based on the regulated supply voltage.
11. The power module of claim 7, wherein the second driving voltage regulator comprises:
a first transistor, comprising:
a first terminal for receiving the supply voltage;
a second terminal for outputting the regulated supply voltage; and
a control end; and
a comparison amplifier, comprising:
a first input end electrically coupled to the first pin;
a second input end electrically coupled to the second end of the first transistor; and
an output end electrically coupled to the control end of the first transistor.
12. The power module according to claim 1 or 7, wherein the driving circuit provides a first charging current to the gate of the gan power switch when the external resistor has a first resistance value, and provides a second charging current to the gate of the gan power switch when the external resistor has a second resistance value, wherein the first charging current is greater than the second charging current when the first resistance value is greater than the second resistance value; when the external resistor has a third resistance value, the driving circuit provides a first discharge current to the gate of the gan power switch, and when the external resistor has a fourth resistance value, the driving circuit provides a second discharge current to the gate of the gan power switch, wherein when the third resistance value is greater than the fourth resistance value, the first discharge current is greater than the second discharge current.
13. The power module of claim 12, wherein the gan power switch is turned on at a first turn-on speed when the gate of the gan power switch receives the first charging current, and the gan power switch is turned on at a second turn-on speed when the gate of the gan power switch receives the second charging current, wherein the first turn-on speed is greater than the second turn-on speed when the first charging current is greater than the second charging current.
14. The power module of claim 12 wherein the gan power switch is turned off at a first turn-off speed when the gate of the gan power switch receives the first discharge current and at a second turn-off speed when the gate of the gan power switch receives the second discharge current, wherein the first turn-off speed is greater than the second turn-off speed when the first discharge current is greater than the second discharge current.
15. A method for controlling a power module, comprising:
adjusting the resistance value of the external resistor;
adjusting the charging current or the discharging current of the driving circuit to the grid of the gallium nitride power switch according to the resistance value of the external resistor by a current control unit in the driving circuit; and
controlling the on/off speed of the GaN power switch by adjusting the charging current or the discharging current, wherein the on/off speed of the GaN power switch is increased when the charging current or the discharging current is increased, and the on/off speed of the GaN power switch is decreased when the discharging current or the discharging current is decreased,
wherein the step of adjusting the charging current or the discharging current of the driving circuit to the gate of the gan power switch by the current control unit comprises:
adjusting the control voltage according to the resistance value of the external resistor through the first driving voltage regulator;
outputting a driving voltage according to the control voltage and an input signal through a driver; and
outputting the charging current or the discharging current to the gate of the GaN power switch through a current regulator according to the driving voltage.
16. A method for controlling a power module, comprising:
adjusting the resistance value of the external resistor;
adjusting the charging current or the discharging current of the driving circuit to the grid of the gallium nitride power switch according to the resistance value of the external resistor by a current control unit in the driving circuit; and
controlling the on/off speed of the GaN power switch by adjusting the charging current or the discharging current, wherein the on/off speed of the GaN power switch is increased when the charging current or the discharging current is increased, and the on/off speed of the GaN power switch is decreased when the discharging current or the discharging current is decreased,
wherein the step of adjusting the charging current or the discharging current of the driving circuit to the gate of the gan power switch by the current control unit comprises:
converting a supply voltage into a regulated supply voltage according to the resistance value of the external resistor by a second driving voltage regulator;
outputting a driving voltage according to an input signal through a driver; and
outputting the charging current or the discharging current to the gate of the GaN power switch through a current regulator according to the driving voltage and the regulated supply voltage.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610993854.3A CN108075755B (en) | 2016-11-11 | 2016-11-11 | Power module and control method thereof |
| TW105142344A TWI596898B (en) | 2016-11-11 | 2016-12-21 | Power module and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610993854.3A CN108075755B (en) | 2016-11-11 | 2016-11-11 | Power module and control method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108075755A CN108075755A (en) | 2018-05-25 |
| CN108075755B true CN108075755B (en) | 2021-07-06 |
Family
ID=60189390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610993854.3A Active CN108075755B (en) | 2016-11-11 | 2016-11-11 | Power module and control method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108075755B (en) |
| TW (1) | TWI596898B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106817112A (en) * | 2015-12-02 | 2017-06-09 | 西门子公司 | The overvoltage crowbar and over-voltage protection method of power semiconductor |
| CN113037059B (en) * | 2019-12-24 | 2022-11-08 | 广东美的白色家电技术创新中心有限公司 | Intelligent power module and drive control method |
| WO2021174524A1 (en) * | 2020-03-06 | 2021-09-10 | 香港科技大学深圳研究院 | Overcurrent protection circuit of gallium nitride power device and method for improving response speed |
| CN117294294B (en) * | 2023-11-22 | 2024-03-19 | 深圳市弗镭斯激光技术有限公司 | Electro-optical Q switch driving circuit based on gallium nitride MOS tube |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201571032U (en) * | 2009-09-18 | 2010-09-01 | 德国新创系统股份有限公司 | Drive board for power semiconductor element |
| CN102478875A (en) * | 2010-11-22 | 2012-05-30 | 株式会社电装 | Load driving apparatus |
| CN103312186A (en) * | 2012-03-06 | 2013-09-18 | 三菱电机株式会社 | Switching-element drive circuit |
| CN103620930A (en) * | 2011-06-09 | 2014-03-05 | 三菱电机株式会社 | Gate drive circuit |
| CN103684378A (en) * | 2012-08-29 | 2014-03-26 | 英飞凌科技奥地利有限公司 | Circuit for driving a transistor |
| CN104348338A (en) * | 2013-07-30 | 2015-02-11 | 株式会社电装 | Semiconductor element module and gate drive circuit |
| CN104901668A (en) * | 2015-05-14 | 2015-09-09 | 湖南大学 | Static drive device and method for silicon-carbide bipolar junction transistor |
| US9413352B2 (en) * | 2014-11-04 | 2016-08-09 | Infineon Technologies Austria Ag | Adjustable internal gate resistor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5938852B2 (en) * | 2011-05-25 | 2016-06-22 | 富士電機株式会社 | Gate drive circuit of voltage controlled switching element |
| JP5931116B2 (en) * | 2014-04-28 | 2016-06-08 | 三菱電機株式会社 | Gate drive circuit |
-
2016
- 2016-11-11 CN CN201610993854.3A patent/CN108075755B/en active Active
- 2016-12-21 TW TW105142344A patent/TWI596898B/en active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201571032U (en) * | 2009-09-18 | 2010-09-01 | 德国新创系统股份有限公司 | Drive board for power semiconductor element |
| CN102478875A (en) * | 2010-11-22 | 2012-05-30 | 株式会社电装 | Load driving apparatus |
| CN103620930A (en) * | 2011-06-09 | 2014-03-05 | 三菱电机株式会社 | Gate drive circuit |
| CN103312186A (en) * | 2012-03-06 | 2013-09-18 | 三菱电机株式会社 | Switching-element drive circuit |
| CN103684378A (en) * | 2012-08-29 | 2014-03-26 | 英飞凌科技奥地利有限公司 | Circuit for driving a transistor |
| CN104348338A (en) * | 2013-07-30 | 2015-02-11 | 株式会社电装 | Semiconductor element module and gate drive circuit |
| US9413352B2 (en) * | 2014-11-04 | 2016-08-09 | Infineon Technologies Austria Ag | Adjustable internal gate resistor |
| CN104901668A (en) * | 2015-05-14 | 2015-09-09 | 湖南大学 | Static drive device and method for silicon-carbide bipolar junction transistor |
Non-Patent Citations (1)
| Title |
|---|
| "A capacitor-less gate drive circuit using two parasitic capacitors suitable for non-insulating-gate GaN FETs";Masataka Ishihara等;《2014 IEEE Energy Conversion Congress and Exposition (ECCE)》;20141113;第3212-3218页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108075755A (en) | 2018-05-25 |
| TW201818659A (en) | 2018-05-16 |
| TWI596898B (en) | 2017-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108075755B (en) | Power module and control method thereof | |
| CN107850910B (en) | Wide-voltage range low dropout regulator | |
| CN101399503B (en) | Switching circuit having low threshold voltage | |
| US8952730B2 (en) | Driver circuit | |
| JP2010051165A (en) | Gate drive circuit of semiconductor apparatus and power conversion apparatus using the same | |
| US20140139268A1 (en) | Driver circuit with tight control of gate voltage | |
| CN103312133B (en) | Grid driving circuit with voltage clamping function | |
| CN106027028B (en) | Electronic drive circuit and method | |
| US9459639B2 (en) | Power supply circuit with control unit | |
| US10700604B2 (en) | High performance switch devices and methods for operating the same | |
| US9559668B2 (en) | Drive circuit and semiconductor apparatus | |
| CN211377999U (en) | High-reliability GaN power tube rapid gate drive circuit | |
| CN109818257B (en) | CMOS (complementary Metal oxide semiconductor) process laser driving circuit | |
| US20150049531A1 (en) | Driving device | |
| US20130015886A1 (en) | High Voltage, High temperature Semiconductor Driver for Switching Power semiconductor devices | |
| US9525414B2 (en) | Gate drive circuit providing constant driving current | |
| WO2022227077A1 (en) | Driver circuit and driving system | |
| CN110518903B (en) | Level shift circuit | |
| CN102298408A (en) | Voltage-stabilizing circuit | |
| US11695409B2 (en) | Drive circuit of power semiconductor element | |
| CN114337203B (en) | Low-power-consumption driving circuit for switching power supply and switching power supply system | |
| CN107094009B (en) | Driving module of silicon carbide field effect tube | |
| US11876511B2 (en) | Gate drive apparatus control method | |
| KR102279267B1 (en) | Switching circuti driving apparatus | |
| US10228714B1 (en) | Low dropout shunt voltage regulator with wide input supply voltage range |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |