TW201818659A - Power module and control method thereof - Google Patents

Abstract

A power module includes a GaN power switch and a driving circuit. The GaN power switch includes a drain terminal, a source terminal and a gate terminal. The driving circuit includes an input terminal and an output terminal. The output terminal of the driving circuit is configured to electrically coupled to the gate terminal of the GaN power switch via an external resistor, and by adjusting the resistance value of the external resistor, the current of the gate terminal of the GaN power switch is changed so as to control the turn-on or turn-off speed of the GaN power switch.

Description

Power module and control method thereof

This case relates to a power module and a control method of the power module. Specifically, this case relates to a power module with adjustable switching speed and a control method for the power module.

As a typical representative of the third generation of semiconductor materials, wide band gap semiconductor gallium nitride (GaN) has excellent properties not available in many traditional silicon materials. It is an excellent semiconductor material for high frequency, high pressure, high temperature and high power applications. With the advancement of GaN technology, GaN power semiconductor devices have broad application prospects in the civilian and military fields.

However, none of the existing power modules using gallium nitride power semiconductor devices can externally adjust the switching speed of the power tube, which is very detrimental to the electromagnetic compatibility characteristics of the end product. It also limits the performance of GaN power devices from another angle. .

Therefore, how to improve the existing GaN power module and control the switching speed of the GaN power module is an important research topic in this field.

One aspect of this disclosure is a power module. The power module includes: a gallium nitride power switch including a drain terminal, a source terminal, and a gate terminal; and a driving circuit including an input terminal and an output terminal, wherein the output terminal of the driving circuit is used for transmitting An external resistor is electrically coupled to the gate terminal of the gallium nitride power switch, and the current of the gate terminal of the gallium nitride power switch is changed by adjusting the resistance value of the external resistor to control the gallium nitride power switch. The speed at which it is turned on or off.

In some embodiments of the present disclosure, the power module further includes: a first pin electrically coupled to the output terminal of the driving circuit; and a second pin electrically coupled to the nitride The gate terminal of the gallium power switch; wherein the external resistor is used to electrically couple between the first pin and the second pin.

In some embodiments of the present disclosure, the input terminal of the driving circuit is used to receive an input signal and output a driving voltage to the first pin according to the input signal.

In some embodiments of the present disclosure, the input signal includes a pulse width modulation signal or a frequency modulation signal.

Another aspect of the present disclosure is a power module. The power module includes: a gallium nitride power switch including a drain terminal, a source terminal, and a gate terminal; and a driving circuit including: an input terminal for receiving an input signal; and an output terminal for electrical performance. Coupled to the gate terminal of the gallium nitride power switch; wherein the driving circuit changes the charging current or discharge current of the driving circuit to the gate terminal of the gallium nitride power switch by adjusting the resistance value of an external resistor to control The speed at which the GaN power switch is turned on or off.

In some embodiments of the present disclosure, the driving circuit includes a current control unit for controlling the speed at which the driving circuit turns on or off the GaN power switch. The power module further includes: a first A pin that is electrically coupled to a first terminal of the current control unit; and a second pin that is electrically coupled to a second terminal of the current control unit; wherein the external resistor is used for electrical coupling Between the first pin and the second pin, to adjust the magnitude of the charging current or the discharging current of the driving circuit to the gate terminal of the gallium nitride power switch.

In some embodiments of the present disclosure, the input signal includes a pulse width modulation signal or a frequency modulation signal.

In some embodiments of the present disclosure, the current control unit includes: a first driving voltage regulator, which is electrically coupled to the first pin for converting a power supply voltage into A control voltage; a driver electrically coupled to the first driving voltage regulator and the second pin for outputting a driving voltage according to the control voltage and the input signal; and a current regulator electrically coupled Connected to the driver and used to output the charging current or the discharging current to the gate terminal of the gallium nitride power switch according to the driving voltage.

In some embodiments of the present disclosure, the current regulator includes: a pull-up switch, a first end of the pull-up switch is used to receive the power supply voltage, and a second end of the pull-up switch is used to output the Charging current, a control terminal of the pull-up switch is used to receive the driving voltage; and a pull-down switch, a first end of the pull-down switch is electrically coupled to the second pin, and a second end of the pull-down switch It is used to output the discharge current, and a control terminal of the pull-down switch is used to receive the driving voltage.

In some embodiments of the present disclosure, the current regulator is used to adjust the on-state impedance of the pull-up switch and the on-state impedance of the pull-down switch according to the driving voltage.

In some embodiments of the present disclosure, when the driving voltage is at a first level, the driving circuit provides the charging current to the gate terminal of the gallium nitride power switch, and when the driving voltage is at a second level The driving circuit provides the discharge current to the gate terminal of the gallium nitride power switch.

In some embodiments of the present disclosure, the first driving voltage regulator includes: a first transistor including: a first terminal for receiving the power supply voltage; and a second terminal for outputting the control voltage ; And a control terminal; and a comparison amplifier, comprising: a first input terminal electrically coupled to the first pin; a second input terminal electrically coupled to the second transistor of the first transistor; Terminal; and an output terminal, which is electrically coupled to the control terminal of the first transistor.

In some embodiments of the present disclosure, the current control unit includes: a second driving voltage regulator, which is electrically coupled to the first pin for converting a power supply voltage into A regulating supply voltage; a driver electrically coupled to the second driving voltage regulator and the second pin for outputting a driving voltage according to the input signal; and a current regulator electrically coupled to the The driver and the second driving voltage regulator are configured to output the charging current or the discharging current to the gate terminal of the gallium nitride power switch according to the driving voltage and the regulated supply voltage.

In some embodiments of the present disclosure, the current regulator includes: a pull-up switch, a first end of the pull-up switch is used to receive the regulated power supply voltage, and a second end of the pull-up switch is used to output The charging current, a control terminal of the pull-up switch is used to receive the driving voltage; and a pull-down switch, a first end of one of the pull-down switches is electrically coupled to the second pin, and one of the pull-down switches is second A terminal is used to output the discharge current, and a control terminal of the pull-down switch is used to receive the driving voltage.

In some embodiments of the present disclosure, the current regulator is used to adjust the magnitude of the charging current and the discharging current according to the regulated supply voltage.

In some embodiments of the present disclosure, the reference voltage regulator includes: a first transistor including: a first terminal for receiving the power supply voltage; and a second terminal for outputting the regulated power supply voltage; And a control terminal; and a comparison amplifier, including: a first input terminal electrically coupled to the first pin; a second input terminal electrically coupled to the second terminal of the first transistor And an output terminal electrically coupled to the control terminal of the first transistor.

In some embodiments of the present disclosure, when the external resistance is a first resistance value, the driving circuit provides a first charging current to the gate terminal of the gallium nitride power switch, and when the external resistance is a first When the resistance value is two, the driving circuit provides a second charging current to the gate terminal of the gallium nitride power switch. When the first resistance value is greater than the second resistance value, the value of the first charging current is greater than the first charging current. Two charging current values; when the external resistance is a third resistance value, the driving circuit provides a first discharge current to the gate terminal of the gallium nitride power switch, and when the external resistance is a fourth resistance value The driving circuit provides a second discharge current to the gate terminal of the gallium nitride power switch, and when the third resistance value is greater than the fourth resistance value, the value of the first discharge current is greater than that of the second discharge current value.

In some embodiments of the present disclosure, when the gate terminal of the gallium nitride power switch receives the first charging current, the gallium nitride power switch is turned on at a first conduction speed. When the gallium nitride power switch is turned on, When the gate terminal receives the second charging current, the gallium nitride power switch is turned on at a second conduction speed, and when the value of the first charging current is greater than the value of the second charging current, the first conduction speed is greater than This second on speed.

In some embodiments of the present disclosure, when the gate terminal of the gallium nitride power switch receives the first discharge current, the gallium nitride power switch is turned off at a first turn-off speed. When the gate terminal of the switch receives the second discharge current, the gallium nitride power switch is turned off at a second turn-off speed, and when the value of the first discharge current is greater than the value of the second discharge current, the first A turn-off speed is greater than the second turn-off speed.

Another aspect of the present disclosure is a control method for a power module. The control method comprises: adjusting a resistance value of an external resistor; and adjusting a charging current or a discharging current of the driving circuit to a gate end of a gallium nitride power switch by a current control unit in a driving circuit according to the resistance value of the external resistor. And controlling the on or off speed of the gallium nitride power switch by adjusting the charging current or the discharging current, wherein when the charging current or the discharging current increases, the on speed or off of the gallium nitride power switch The turn-off speed is increased, and when the discharge current or the discharge current is reduced, the turn-on or turn-off speed of the gallium nitride power switch is reduced.

In some embodiments of the present disclosure, the step of adjusting the charging current or the discharging current of the driving circuit to the gate terminal of the gallium nitride power switch by the current control unit includes: passing a first driving voltage regulator Adjusting a control voltage according to the resistance value of the external resistor; outputting a driving voltage according to the control voltage and an input signal through a driver; and outputting the charging current or the discharging current to the nitridation according to the driving voltage through a current regulator The gate of a gallium power switch.

In some embodiments of the present disclosure, the step of adjusting the charging current or the discharging current of the driving circuit to the gate terminal of the gallium nitride power switch by the current control unit includes: driving the regulator through a second voltage. Converting a supply voltage into an adjusted supply voltage according to the resistance value of the external resistor; outputting a drive voltage according to an input signal through a driver; and outputting the charging current or the charge voltage according to the drive voltage and the adjusted supply voltage through a current regulator The discharge current reaches the gate terminal of the gallium nitride power switch.

In summary, the power module in this disclosure can adjust the value of the charging current or the discharging current by adjusting the resistance value of the external resistor, thereby adjusting the on speed and off speed of the gallium nitride power switch in the power module. This is to improve the electromagnetic compatibility characteristics of end products and enhance the performance of GaN power devices.

The following is a detailed description with examples and the accompanying drawings to better understand the aspect of this case, but the examples provided are not intended to limit the scope covered by this disclosure, and the description of structural operations is not intended to limit The order of execution, any structure with recombination of components, and a device with equal effect are all covered by this disclosure. In addition, according to industry standards and common practices, the drawings are only for the purpose of supplementary description, and are not drawn according to the original dimensions. In fact, the dimensions of various features can be arbitrarily increased or decreased for easy explanation. In the following description, the same elements will be described with the same symbols to facilitate understanding.

The terms used throughout the specification and the scope of patent applications, unless otherwise specified, usually have the ordinary meaning of each term used in this field, in the content disclosed here, and in special content. Certain terms used to describe this disclosure are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art on the description of this disclosure.

In addition, the terms "including", "including", "having", "containing" and the like used in this article are all open-ended terms, meaning "including but not limited to." In addition, "and / or" as used herein includes any one or more of the related listed items and all combinations thereof.

In this article, when a component is called "connected" or "coupled", it can mean "electrically connected" or "electrically coupled". "Connected" or "coupled" can also be used to indicate that two or more components operate together or interact with each other. In addition, although the terms "first", "second", ... are used to describe different elements in this article, the terms are only used to distinguish elements or operations described in the same technical term. Unless the context clearly indicates otherwise, the term is not specifically referring to or implying order or order, nor is it intended to limit the invention.

Please refer to Figure 1. FIG. 1 is a schematic diagram of a power module 100 according to some embodiments of the present invention. As shown in FIG. 1, the power module 100 includes a gallium nitride power switch 120 and a driving circuit 140. The GaN power switch 120 includes a drain terminal D, a source terminal S, and a gate terminal G. In some embodiments, the source terminal S of the GaN power switch 120 is electrically coupled to the reference voltage VSS. The driving circuit 140 includes an input terminal and an output terminal. The output terminal of the driving circuit 140 is configured to be electrically coupled to the gate terminal G of the gallium nitride power switch 120 through an external resistor Rd. In some embodiments, the power module 100 changes the current of the gate terminal G of the gallium nitride power switch 120 by adjusting the resistance value of the external resistor Rd to control the on or off speed of the gallium nitride power switch 120.

As shown in FIG. 1, in some embodiments of the present invention, the power module 100 includes a pin PIN1 and a pin PIN2. The pin PIN1 is electrically coupled to the output terminal of the driving circuit 140. The pin PIN2 is electrically coupled to the gate terminal G of the GaN power switch 120. Structurally, the external resistor Rd is used to be electrically coupled between the pin PIN1 and the pin PIN2.

In some embodiments of the present invention, an input terminal of the driving circuit 140 is configured to receive an input signal P, and output a driving voltage VD to the pin PIN1 according to the input signal P. For example, in some embodiments, the input signal P includes a pulse width modulation signal (Pluse Width Modulation, PWM). In other embodiments, the input signal P includes a frequency modulation signal. Specifically, the driving circuit 140 receives a power supply voltage VDD and a reference voltage VSS. Thereby, the driving circuit 140 can output driving voltages VD of different levels according to different input signals P, for example, pulse width modulation or frequency modulation.

In this way, by adjusting the resistance value of the external resistor Rd, the current of the gate terminal G of the gallium nitride power switch 120 can be adjusted and changed accordingly, so as to control the on or off speed of the gallium nitride power switch 120. In this embodiment, when the driving circuit 140 controls the gallium nitride power switch 120 to be turned on, the resistance value of the external resistor Rd is increased to make the conduction speed of the gallium nitride power switch slower; the resistance value of the external resistor Rd is decreased to Make the GaN power switch turn on faster. When the driving circuit 140 controls the gallium nitride power switch 120 to turn off, increase the resistance value of the external resistor Rd to slow down the off speed of the gallium nitride power switch; reduce the resistance value of the external resistor Rd to make the gallium nitride The turn-off speed of the power switch becomes faster. In other embodiments, when the driving circuit 140 controls the gallium nitride power switch 120 to turn on, the resistance value of the external resistor Rd is increased to make the conduction speed of the gallium nitride power switch faster; the resistance value of the external resistor Rd is reduced to Slows the turn-on speed of the GaN power switch. When the driving circuit 140 controls the GaN power switch 120 to turn off, increase the resistance value of the external resistor Rd to make the GaN power switch turn off faster; reduce the resistance value of the external resistor Rd to make the gallium nitride The off speed of the power switch becomes slower.

Please refer to Figure 2. FIG. 2 is a schematic diagram of a power module 200 according to other embodiments of the present invention. As shown in FIG. 2, in some embodiments of the present invention, the power module 200 includes a gallium nitride power switch 220 and a driving circuit 240. The gallium nitride power switch 220 includes a drain terminal D, a source terminal S, and a gate terminal G. In some embodiments, the source terminal S of the GaN power switch 220 is electrically coupled to the reference voltage VSS. The driving circuit 240 includes an input terminal and an output terminal. Specifically, an input terminal of the driving circuit 240 is used to receive an input signal P. Similar to the embodiment shown in FIG. 1, in some embodiments, the input signal P includes a pulse width modulation signal (PWM). In other embodiments, the input signal P includes a frequency modulation signal. The output terminal of the driving circuit 240 is electrically coupled to the gate terminal G of the GaN power switch 220.

In some embodiments, the driving circuit 240 includes a current control unit for controlling the speed at which the driving circuit 240 turns on or off the gallium nitride power switch 220. Specifically, the driving circuit 240 adjusts the charging current or discharging current of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220 through the resistance value of the external resistor Rd to control the on or off speed of the gallium nitride power switch 240. .

As shown in FIG. 2, in some embodiments of the present invention, the power module 200 also includes a pin PIN1 and a pin PIN2. The pins PIN1 and PIN2 are electrically coupled to the driving circuit 240 respectively. The driving circuit 240 includes a current control unit. Specifically, the pin PIN1 is electrically coupled to the first terminal of the current control unit. The pin PIN2 is electrically coupled to the second terminal of the current control unit. In some embodiments, the pin PIN2 is electrically coupled to the reference voltage VSS. Structurally, the external resistor Rd is used to electrically couple between the pin PIN1 and the pin PIN2 to adjust the charging current or the discharging current of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220.

Please refer to Figure 3 together. FIG. 3 is a flowchart of a control method 300 of a power module 200 according to some embodiments of the present disclosure. For the sake of convenience and clear explanation, the following control method 300 is described in conjunction with the power module 200 shown in FIG. 2, but it is not limited thereto. , When it can be changed and retouched. As shown in FIG. 3, the control method 300 includes steps S310, S320, and S330.

First, in step S310, the resistance value of the external resistor Rd is adjusted. Next, in step S320, the current control unit in the driving circuit 240 adjusts the charging current or the discharging current of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220 according to the resistance value of the external resistor Rd. Next, in step S330, the speed of turning on or off the GaN power switch 220 is controlled by adjusting the charging current or the discharging current. Specifically, when the charging current or the discharging current increases, the on speed or the off speed of the gallium nitride power switch 220 increases, and when the discharging current or the discharging current decreases, the on or off speed of the gallium nitride power switch 220 Slow down.

In the following paragraphs, the specific circuit and operation method of the current control unit in the driving circuit 240 to control the speed at which the driving circuit 240 turns on or off the gallium nitride power switch 220 will be described with illustrations. Please refer to Figure 4. FIG. 4 is a detailed circuit diagram of the driving circuit 240 according to some embodiments of the present invention.

As shown in FIG. 4, in some embodiments of the present invention, the current control unit in the driving circuit 240 includes a first driving voltage regulator 242, a driver 244, and a current regulator 246. Structurally, the first driving voltage regulator 242 is electrically coupled to the pin PIN1 to convert the power supply voltage VDD to the control voltage Vdrv according to the resistance value of the external resistor Rd. The driver 244 is electrically coupled to the first driving voltage regulator 242 and the pin PIN2 to output the driving voltage Vg according to the control voltage Vdrv and the input signal P. The current regulator 246 is electrically coupled to the driver 244 for outputting the charging current I1 or the discharging current I2 to the gate terminal G of the gallium nitride power switch 220 according to the driving voltage Vg.

Specifically, in some embodiments of the present invention, the current regulator 246 includes a pull-up switch S1 and a pull-down switch S2. The first terminal of the pull-up switch S1 is used to receive the power supply voltage VDD, and the second terminal of the pull-up switch S1 is used to output the charging current I1. The control terminal of the pull-up switch S1 is used to receive the driving voltage Vg. The first terminal of the pull-down switch S2 is electrically coupled to the pin PIN2 for receiving the reference voltage VSS. The second terminal of the pull-down switch S2 is used to output the discharge current I2, and the control terminal of the pull-down switch S2 is used to receive the driving voltage Vg. Therefore, when the driving voltage Vg is at a first level, the pull-up switch S1 is turned on and the pull-down switch S2 is turned off, and the driving circuit 240 provides the charging current I1 to the gallium nitride power switch 220. In contrast, when the driving voltage Vg is at the second level, the pull-up switch S1 is turned off, the pull-down switch S2 is turned on, and the driving circuit 240 provides a discharge current I2 to the gallium nitride power switch 220.

In this way, the current regulator 246 can adjust the on-state impedance of the pull-up switch S1 and the on-state impedance of the pull-down switch S2 according to the driving voltage Vg. When the resistance value of the external resistor Rd increases, the level of the control voltage Vdrv is also higher through the first driving voltage regulator 242. Therefore, the level of the driving voltage Vg is also high. The on-state impedance of the pull-up switch S1 and the pull-down switch S2 is reduced, thereby increasing the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220, and the switching speed of the gallium nitride power switch 220. accelerate. on the other hand. When the resistance value of the external resistor Rd decreases, the level of the control voltage Vdrv is also lowered by the first driving voltage regulator 242. Therefore, the level of the driving voltage Vg is also low. The on-state impedance of the pull-up switch S1 and the pull-down switch S2 is increased, thereby reducing the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220, and the switching speed of the gallium nitride power switch 220. Slow down.

In the following paragraphs, specific circuits and operation methods in the first driving voltage regulator 242 will be described with illustrations. Please refer to Figure 5. FIG. 5 is a detailed circuit diagram of the first driving voltage regulator 242 according to some embodiments of the present invention.

As shown in FIG. 5, in some embodiments of the present invention, the first driving voltage regulator 242 includes a first transistor T1 and a comparison amplifier OP1. Structurally, the first transistor T1 includes a first terminal, a second terminal, and a control terminal. The first terminal of the first transistor T1 is used to receive a power supply voltage VDD. The second terminal of the first transistor T1 is used to output a control voltage Vdrv. The comparison amplifier OP1 includes a first input terminal, a second input terminal, and an output terminal. The first input terminal of the comparison amplifier OP1 is electrically coupled to the pin PIN1. The second input terminal of the comparison amplifier OP1 is electrically coupled to the second terminal of the first transistor T1. As shown in FIG. 5, in some embodiments, the second input terminal of the comparison amplifier OP1 is further electrically coupled to the second terminal of the first transistor T1 through a bandgap reference circuit (BGR). The band reference voltage circuit is controlled according to the enable signal EN received by the first driving voltage regulator 242. The output terminal of the comparison amplifier OP1 is electrically coupled to the control terminal of the first transistor T1. The external resistor R1 is electrically coupled between the first input terminal of the comparison amplifier OP1 and the second terminal of the first transistor T1. The external resistor Rd and the capacitor C1 are respectively electrically coupled between the first input terminal of the comparison amplifier OP1 and the reference voltage VSS. The capacitor Cout is electrically coupled between the second terminal of the first transistor T1 and the reference voltage VSS.

In this way, when the resistance value of the external resistor Rd increases, the control voltage output by the first driving voltage regulator 242 passes through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the first driving voltage regulator 242. Vdrv's standard has also increased. In contrast, when the resistance value of the external resistor Rd decreases, the control voltage Vdrv output by the first driving voltage regulator 242 is passed through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the first driving voltage regulator 242. The standard has also decreased.

Please refer to Figure 6 together. FIG. 6 is a flowchart of a control method 300 of a power module 200 according to some embodiments of the present disclosure. For the sake of convenience and clear description, the following control method 300 is described in conjunction with the driving circuit 240 shown in FIG. 4, but it is not limited thereto. Anyone skilled in this art will not depart from the spirit and scope of this case. When you can make various changes and retouching. As shown in FIG. 6, in some embodiments, step S320 of the control method 300 further includes steps S322a, S324a, and S326a.

First, in step S322a, the control voltage Vdrv is adjusted by the first driving voltage regulator 242 according to the resistance value of the external resistor Rd. Next, in step S324a, the driver 244 outputs a driving voltage Vg according to the control voltage Vdrv and the input signal P. Next, in step S326a, the charging current I1 or the discharging current I2 is output to the gate terminal G of the gallium nitride power switch 220 through the current regulator 246 according to the driving voltage Vg.

Those skilled in the art can directly understand how the control method 300 shown in FIG. 6 is based on the power module 200 shown in FIG. 2 and the driving circuit 240 shown in FIG. 4 to perform these operations and functions. , So I won't repeat them here.

Please refer to Figure 7. FIG. 7 is a detailed circuit diagram of the driving circuit 240 according to other embodiments of the present invention.

As shown in FIG. 7, in some embodiments of the present invention, the current control unit in the driving circuit 240 includes a second driving voltage regulator 243, a driver 245, and a current regulator 247. Structurally, the second driving voltage regulator 243 is electrically coupled to the pin PIN1 for converting the power supply voltage VDD to the regulated power supply voltage Vtp according to the resistance value of the external resistor Rd. The driver 245 is electrically coupled to the second driving voltage regulator 243 and the pin PIN2 to output the driving voltage Vg according to the input signal P. The current regulator 247 is electrically coupled to the driver 245 and the second driving voltage regulator 243, and is configured to output the charging current I1 or the discharging current I2 to the gate terminal G of the gallium nitride power switch 220 according to the driving voltage Vg and the regulated supply voltage Vtp. .

Similar to the driving circuit 240 shown in FIG. 4, in some embodiments of the present invention, the current regulator 247 may further include a pull-up switch S1 and a pull-down switch S2. The first terminal of the pull-up switch S1 is used to receive the regulated power supply voltage Vtp, and the second terminal of the pull-up switch S1 is used to output the charging current I1. The control terminal of the pull-up switch S1 is used to receive the driving voltage Vg. The first terminal of the pull-down switch S2 is electrically coupled to the pin PIN2 for receiving the reference voltage VSS. The second terminal of the pull-down switch S2 is used to output the discharge current I2, and the control terminal of the pull-down switch S2 is used to receive the driving voltage Vg. Accordingly, when the driving voltage Vg is at a first level, the pull-up switch S1 is turned on and the pull-down switch S2 is turned off. The driving circuit 240 provides a charging current I1 to the gate terminal G of the gallium nitride power switch 220. In contrast, when the driving voltage Vg is at the second level, the pull-up switch S1 is turned off and the pull-down switch S2 is turned on. The driving circuit 240 provides a discharge current I2 to the gate terminal G of the gallium nitride power switch 220.

In this way, the current regulator 247 can adjust the charging current I1 or the discharging current I2 output by the current regulator 247 according to the adjusted supply voltage Vtp. When the resistance value of the external resistor Rd increases, the level of the regulated power supply voltage Vtp is also higher through the second driving voltage regulator 243, so that the driving current 240 of the driving circuit 240 to the gate terminal G of the GaN power switch 220 is charged. Or the discharge current I2 increases, and the switching speed of the gallium nitride power switch 220 is accelerated. on the other hand. When the resistance value of the external resistor Rd decreases, the level of the regulated supply voltage Vtp is also lowered by the second driving voltage regulator 243, thereby causing the driving circuit 240 to charge the current I1 of the gate terminal G of the gallium nitride power switch 220. Or the discharge current I2 decreases, and the switching speed of the gallium nitride power switch 220 decreases.

In the following paragraphs, specific circuits and operation methods in the second driving voltage regulator 243 will be described with illustrations. Please refer to Figure 8. FIG. 8 is a detailed circuit diagram of the second driving voltage regulator 243 according to some embodiments of the present invention.

As shown in FIG. 8, in some embodiments of the present invention, the second driving voltage regulator 243 includes a first transistor T1 and a comparison amplifier OP1. Structurally, the first transistor T1 includes a first terminal, a second terminal, and a control terminal. The first terminal of the first transistor T1 is used to receive a power supply voltage VDD. The second terminal of the first transistor T1 is used to output a regulated power supply voltage Vtp. The comparison amplifier OP1 includes a first input terminal, a second input terminal, and an output terminal. The first input terminal of the comparison amplifier OP1 is electrically coupled to the pin PIN1. The second input terminal of the comparison amplifier OP1 is electrically coupled to the second terminal of the first transistor T1. As shown in FIG. 8, in some embodiments, the second input terminal of the comparison amplifier OP1 is further electrically coupled to the second terminal of the first transistor T1 through a bandgap reference circuit (BGR). The band difference reference voltage circuit performs control according to the enable signal EN received by the second driving voltage regulator 243. The output terminal of the comparison amplifier OP1 is electrically coupled to the control terminal of the first transistor T1. The external resistor R1 is electrically coupled between the first input terminal of the comparison amplifier OP1 and the second terminal of the first transistor T1. The external resistor Rd and the capacitor C1 are respectively electrically coupled between the first input terminal of the comparison amplifier OP1 and the reference voltage VSS. The capacitor Cout is electrically coupled between the second terminal of the first transistor T1 and the reference voltage VSS.

In this way, when the resistance value of the external resistor Rd increases, through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the second driving voltage regulator 243, the regulating power output from the second driving voltage regulator 243 is adjusted. The level of the voltage Vtp also increases accordingly. On the other hand, when the resistance value of the external resistor Rd decreases, the power supply voltage output by the second driving voltage regulator 243 is adjusted by the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the second driving voltage regulator 243. The level of Vtp also decreased.

Please refer to Figure 9 together. FIG. 9 is a flowchart of a method 300 for controlling a power module 200 according to other embodiments of the present disclosure. For the sake of convenience and clear description, the following control method 300 is described in conjunction with the driving circuit 240 shown in FIG. 7, but it is not limited thereto. Any person skilled in the art will not depart from the spirit and scope of this case. When you can make various changes and retouching. As shown in FIG. 9, in some embodiments, step S320 of the control method 300 further includes step S322 b, step S324 b, and step S326 b.

First, in step S322b, the second voltage regulator 243 converts the power supply voltage VDD to the regulated power supply voltage Vtp according to the resistance value of the external resistor Rd. Next, in step S324b, the driver 245 outputs the driving voltage Vg according to the input signal P. Next, in step S326b, the current regulator 247 outputs the charging current I1 or the discharging current I2 to the gate terminal G of the gallium nitride power switch 220 according to the driving voltage Vg and the regulated supply voltage Vtp.

Those skilled in the art can directly understand how the control method 300 described in FIG. 9 is based on the power module 200 shown in FIG. 2 and the drive circuit 240 shown in FIG. 7 to perform these operations and functions. , So I won't repeat them here.

In this way, through the driving circuit 240 shown in each of the above embodiments, when the resistance value of the external resistor Rd increases, the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220 increases. The switching speed of the GaN power switch 220 is increased. on the other hand. When the resistance value of the external resistor Rd decreases, the charging current I1 or the discharging current I2 of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220 decreases, and the switching speed of the gallium nitride power switch 220 decreases.

In other words, when the external resistance Rd is the first resistance value, the driving circuit 240 provides the first charging current I1 to the gate terminal G of the gallium nitride power switch 220. When the external resistance Rd is the second resistance value, the driving circuit 240 provides nitrogen to the nitrogen. The gate terminal G of the gallium carbide power switch 220 provides a second charging current I1. When the first resistance value is greater than the second resistance value, the value of the first charging current I1 is greater than the value of the second charging current I1.

Similarly, when the external resistance Rd is the third resistance value, the driving circuit 240 provides the first discharge current I2 to the gate terminal G of the gallium nitride power switch 220. When the external resistance Rd is the fourth resistance value, the driving circuit 240 provides The gate terminal G of the GaN power switch 220 provides a second discharge current I2. When the third resistance value is greater than the fourth resistance value, the value of the first discharge current I2 is greater than the value of the second discharge current I2.

As such, in some embodiments of the present invention, when the gate terminal G of the gallium nitride power switch 220 receives the first charging current I1, the gallium nitride power switch 220 is turned on at the first conduction speed. When the gallium nitride power switch 220 is turned on, When the gate terminal G of the 220 receives the second charging current I1, the gallium nitride power switch 220 is turned on at the second conduction speed. When the value of the first charging current I1 is greater than the value of the second charging current I1, the first conduction speed is greater than the second conduction speed.

Similarly, in some embodiments of the present invention, when the gate terminal G of the gallium nitride power switch 220 receives the first discharge current I2, the gallium nitride power switch 220 is turned off at the first turn-off speed. When the gate terminal G of the switch 220 receives the second discharge current I2, the gallium nitride power switch 220 is turned off at the second turn-off speed. When the value of the first discharge current I2 is greater than the value of the second discharge current I2, the first turn-off speed is greater than the second turn-off speed.

In summary, the power modules 100 and 200 in the embodiments of the present disclosure can adjust the value of the charging current I1 or the discharging current I2 by adjusting the resistance value of the external resistor Rd, thereby adjusting the power modules 100 and 200. The on and off speeds of the gallium nitride power switches 120 and 220 are used to improve the electromagnetic compatibility characteristics of the end products and enhance the performance of the gallium nitride power devices.

Although the disclosed methods are illustrated and described herein as a series of steps or events, it should be understood that the order of the illustrated steps or events should not be construed as limiting. For example, some steps may occur in a different order and / or concurrently with steps or events other than the steps or events shown and / or described herein. In addition, not all steps shown herein are necessary to implement one or more aspects or embodiments described herein. In addition, one or more steps herein may also be performed in one or more separate steps and / or stages.

It should be noted that, in the case of no conflict, the features and circuits in the various drawings, embodiments and embodiments of the present disclosure can be combined with each other. The circuits shown in the drawings are for illustration purposes only, and are simplified to make the description concise and easy to understand, and are not intended to limit the case. In addition, the GaN power switches 120, 220, the pull-up switch S1, the pull-down switch S2, the first transistor T1, the comparison amplifier OP1, and the like exemplified in the above embodiment can have various different implementations. For example, the pull-up switch S1, the pull-down switch S2, the first transistor T1, and the like can be composed of a bipolar junction transistor (BJT), a metal-oxide semiconductor field effect transistor (Metal-Oxide- Semiconductor Field-Effect Transistor (MOSFET) or other suitable semiconductor components.

Although the present disclosure has been disclosed as above in the form of implementation, it is not intended to limit the present disclosure. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present disclosure. The protection scope of the content shall be determined by the scope of the attached patent application.

100, 200‧‧‧ Power Module

120、220‧‧‧GaN Power Switch

140, 240‧‧‧ drive circuit

242, 243‧‧‧‧Drive voltage regulator

244, 245‧‧‧ drives

246, 247‧‧‧ current regulator

300‧‧‧Control method

S310 ~ S330‧‧‧step

S322a ~ S326a, S322b ~ S326b‧‧‧Steps

S‧‧‧Source Extreme

D‧‧‧Extreme

G‧‧‧ Gate extreme

PIN1, PIN2‧‧‧pin

Rd‧‧‧External Resistor

BGR‧‧‧With differential reference voltage circuit

S1, S2‧‧‧ Switch

T1‧‧‧Transistor

C1, Cout‧‧‧Capacitor

OP1‧‧‧Comparison Amplifier

VSS‧‧‧Reference voltage

VDD‧‧‧ supply voltage

VD‧‧‧Drive voltage

Vg‧‧‧Drive voltage

Vdrv‧‧‧Control voltage

Vtp‧‧‧ supply voltage

I1, I2‧‧‧ current

PWM‧‧‧ input signal

EN‧‧‧Enable signal

FIG. 1 is a schematic diagram of a power module according to some embodiments of the present invention. FIG. 2 is a schematic diagram of a power module according to other embodiments of the present invention. FIG. 3 is a flowchart of a control method of a power module according to some embodiments of the present disclosure. FIG. 4 is a detailed circuit diagram of a driving circuit according to some embodiments of the present invention. FIG. 5 is a detailed circuit diagram of a first driving voltage regulator according to some embodiments of the present invention. FIG. 6 is a flowchart of a method for controlling a power module according to some embodiments of the present disclosure. FIG. 7 is a detailed circuit diagram of a driving circuit according to other embodiments of the present invention. FIG. 8 is a detailed circuit diagram of a second driving voltage regulator according to some embodiments of the present invention. FIG. 9 is a flowchart of a method for controlling a power module according to other embodiments of the present disclosure.

Claims (22)

A power module includes: a gallium nitride power switch including a drain terminal, a source terminal, and a gate terminal; and a driving circuit including an input terminal and an output terminal, wherein the output terminal of the driving circuit is used for Is electrically coupled to the gate terminal of the gallium nitride power switch through an external resistor, wherein the current of the gate terminal of the gallium nitride power switch is changed by adjusting the resistance value of the external resistor to control the gallium nitride The speed at which the power switch is turned on or off. The power module according to claim 1, further comprising: a first pin electrically coupled to the output terminal of the driving circuit; and a second pin electrically coupled to the gallium nitride power The gate terminal of the switch; wherein the external resistor is used for electrically coupling between the first pin and the second pin. The power module according to claim 2, wherein the input terminal of the driving circuit is configured to receive an input signal and output a driving voltage to the first pin according to the input signal. The power module according to claim 3, wherein the input signal includes a pulse width modulation signal or a frequency modulation signal. A power module includes: a gallium nitride power switch including a drain terminal, a source terminal, and a gate terminal; and a driving circuit including: an input terminal for receiving an input signal; and an output terminal, Electrically coupled to the gate terminal of the gallium nitride power switch; wherein the driving circuit changes the charging current or discharge current of the gate terminal of the gallium nitride power switch by adjusting the resistance value of an external resistor, To control the on / off speed of the GaN power switch. The power module according to claim 5, wherein the driving circuit includes a current control unit for controlling a speed at which the driving circuit turns on or off the GaN power switch, and the power module further includes: a A first pin is electrically coupled to a first terminal of the current control unit; and a second pin is electrically coupled to a second terminal of the current control unit; wherein the external resistor is used to electrically Is coupled between the first pin and the second pin to adjust the magnitude of the charging current or the discharging current of the driving circuit to the gate terminal of the gallium nitride power switch. The power module according to claim 5, wherein the input signal includes a pulse width modulation signal or a frequency modulation signal. The power module according to claim 7, wherein the current control unit includes: a first driving voltage regulator, which is electrically coupled to the first pin, and is configured to supply a supply voltage according to a resistance value of the external resistor. Converting into a control voltage; a driver electrically coupled to the first driving voltage regulator and the second pin for outputting a driving voltage according to the control voltage and the input signal; and a current regulator, electrically Is coupled to the driver for outputting the charging current or the discharging current to the gate terminal of the gallium nitride power switch according to the driving voltage. The power module according to claim 8, wherein the current regulator comprises: a pull-up switch, a first end of the pull-up switch is used for receiving the power supply voltage, and a second end of the pull-up switch is used for Output the charging current, a control terminal of the pull-up switch is used to receive the driving voltage; and a pull-down switch, a first end of one of the pull-down switches is electrically coupled to the second pin, Two terminals are used to output the discharge current, and one control terminal of the pull-down switch is used to receive the driving voltage. The power module according to claim 9, wherein the current regulator is used to adjust the on-state impedance of the pull-up switch and the on-state impedance of the pull-down switch according to the driving voltage. The power module according to claim 8, wherein when the driving voltage is at a first level, the driving circuit provides the charging current to the gallium nitride power switch, and when the driving voltage is at a second level, the The driving circuit provides the discharge current to the gallium nitride power switch. The power module according to claim 8, wherein the first driving voltage regulator includes: a first transistor including: a first terminal for receiving the power supply voltage; a second terminal for outputting the power A control voltage; and a control terminal; and a comparison amplifier comprising: a first input terminal electrically coupled to the first pin; a second input terminal electrically coupled to the first transistor; A second terminal; and an output terminal, which is electrically coupled to the control terminal of the first transistor. The power module according to claim 7, wherein the current control unit includes: a second driving voltage regulator, which is electrically coupled to the first pin, and is configured to supply a supply voltage according to a resistance value of the external resistor. Converting into a regulated supply voltage; a driver electrically coupled to the second driving voltage regulator and the second pin for outputting a driving voltage according to the input signal; and a current regulator electrically coupled The driver and the second driving voltage regulator are configured to output the charging current or the discharging current to the gate terminal of the gallium nitride power switch according to the driving voltage and the regulated supply voltage. The power module according to claim 13, wherein the current regulator includes: a pull-up switch, a first end of the pull-up switch is used to receive the regulated power supply voltage, and a second end of the pull-up switch is used To output the charging current, one control terminal of the pull-up switch is used to receive the driving voltage; and a pull-down switch, a first end of one of the pull-down switches is electrically coupled to the second pin and one of the pull-down switches. The second terminal is used to output the discharge current, and one control terminal of the pull-down switch is used to receive the driving voltage. The power module according to claim 14, wherein the current regulator is configured to adjust the magnitude of the charging current and the discharging current according to the regulated supply voltage. The power module according to claim 13, wherein the second driving voltage regulator includes: a first transistor including: a first terminal for receiving the power supply voltage; a second terminal for outputting the power Adjusting a supply voltage; and a control terminal; and a comparison amplifier including: a first input terminal electrically coupled to the first pin; a second input terminal electrically coupled to the first transistor The second terminal; and an output terminal, which is electrically coupled to the control terminal of the first transistor. The power module according to claim 6, wherein when the external resistance is a first resistance value, the driving circuit provides a first charging current to the gate terminal of the gallium nitride power switch, and when the external resistance is At a second resistance value, the driving circuit provides a second charging current to the gate terminal of the gallium nitride power switch, wherein when the first resistance value is greater than the second resistance value, the value of the first charging current is greater than The value of the second charging current; when the external resistance is a third resistance value, the driving circuit provides a first discharge current to the gate terminal of the gallium nitride power switch, and when the external resistance is a fourth resistance The driving circuit provides a second discharge current to the gate terminal of the gallium nitride power switch, and when the third resistance value is greater than the fourth resistance value, the value of the first discharge current is greater than the second discharge The value of the current. The power module according to claim 17, wherein when the gate terminal of the gallium nitride power switch receives the first charging current, the gallium nitride power switch is turned on at a first conduction speed, and when the gallium nitride power is turned on When the gate terminal of the switch receives the second charging current, the gallium nitride power switch is turned on at a second conducting speed, and when the value of the first charging current is greater than the value of the second charging current, the first conducting The speed is greater than the second on-speed. The power module according to claim 17, wherein when the gate terminal of the gallium nitride power switch receives the first discharge current, the gallium nitride power switch is turned off at a first off speed, and when the nitride When the gate terminal of the gallium power switch receives the second discharge current, the gallium nitride power switch is turned off at a second turn-off speed. When the value of the first discharge current is greater than the value of the second discharge current, The first turn-off speed is greater than the second turn-off speed. A control method for a power module includes: adjusting a resistance value of an external resistor; and a current control unit in a driving circuit, adjusting a driving terminal of the driving circuit to a gallium nitride power switch according to the resistance value of the external resistor. Charging current or discharging current; and controlling the on or off speed of the gallium nitride power switch by adjusting the charging current or the discharging current, wherein when the charging current or the discharging current increases, the gallium nitride power The turn-on or turn-off speed of the switch is increased, and when the discharge current or the discharge current is reduced, the turn-on or turn-off speed of the gallium nitride power switch is reduced. The control method according to claim 20, wherein the step of adjusting, by the current control unit, the charging current or the discharging current of the driving circuit to the gate terminal of the gallium nitride power switch comprises: adjusting through a first driving voltage The controller adjusts a control voltage according to the resistance value of the external resistor; outputs a driving voltage according to the control voltage and an input signal through a driver; and outputs the charging current or the discharging current to the nitrogen according to the driving voltage through a current regulator This gate of the gallium power switch. The control method according to claim 20, wherein the step of adjusting the charging current or the discharging current of the driving circuit to the gate terminal of the gallium nitride power switch by the current control unit includes: adjusting by a second driving voltage The converter converts a power supply voltage into a regulated supply voltage according to the resistance value of the external resistor; outputs a drive voltage according to an input signal through a driver; and outputs the charging current according to the drive voltage and the regulated power supply voltage through a current regulator Or the discharge current reaches the gate terminal of the gallium nitride power switch.