CN104901668B - A kind of static drive device and method of silicon carbide bipolar junction transistor - Google Patents
A kind of static drive device and method of silicon carbide bipolar junction transistor Download PDFInfo
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- CN104901668B CN104901668B CN201510244410.5A CN201510244410A CN104901668B CN 104901668 B CN104901668 B CN 104901668B CN 201510244410 A CN201510244410 A CN 201510244410A CN 104901668 B CN104901668 B CN 104901668B
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Abstract
The present invention relates to technical field of semiconductors, and in particular to a kind of static drive device and method of silicon carbide bipolar junction transistor.Connected between the base stage and driving power of silicon carbide bipolar junction transistor a variable resistance unit, the variable resistance unit includes high speed silicon substrate field controller and a current-limiting resistance, described current-limiting resistance one end connects the source electrode of the high speed silicon substrate field controller, and the other end connects the drain electrode of the high speed silicon substrate field controller；The colelctor electrode of the silicon carbide bipolar junction transistor is connected with current sensing device, and the current sensing device is connected with the grid and source electrode of the high speed silicon substrate field controller.Changed by silicon carbide bipolar junction transistor ideal base drive current according to the direct ratio of collector current, largely reduce base drive power consumption, while effectively reduced and realize ideal base drive current variable costs, and essentially eliminate time delay.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of static drive dress of silicon carbide bipolar junction transistor
Put and method.
Background technology
Along with the rise of carborundum (SiC) power device, SiC BJT (SiC Bipolar Junction
Transistor, silicon carbide bipolar junction transistor) also due to its high current gain, excellent high temperature resistant reliability, making work
Skill is simple and the advantages that without gate pole grid oxygen reliability problem, turns into one of most attractive SiC constructions of switch, so as to obtain
It is widely applied.Its main feature has：First, traditional silicon BJT, SiC BJT is different from because its mode of operation connects very much
Nearly monopole type device and there is relatively stable on state characteristic, overcome switching speed is slow, power consumption is big and safety operation area is small etc.
Shortcoming；Second, commercialized 1200V SiC BJT conducting resistance and switching speed all with SiC MOSFET (SiC Metal-
Oxide-Semiconductor Field-Effect Transistor, manufacturing silicon carbide semiconductor field-effect transistor) it is very nearly the same,
But SiC BJT chip size can but reduce by 50%；3rd, need 13-16 compared to the manufacture craft for playing SiC MOSFET
Block mask plate, if SiC BJT manufacture craft process 7-9 block mask plates, therefore with more simple manufacturing process and more
Low cost；4th, SiC BJT do not have SiC MOSFET grid oxygen reliability problem.But because SiC BJT are current modes
Driving element, its base stage need to provide lasting electric current to ensure the normally of device, and due to SiC BJT devices and Si
BJT device properties have very big difference, therefore Si BJT driving can not be entirely applied to SiC BJT, thus driving into
For the main bottleneck of limitation SiC BJT applications.
Traditional SiC BJT drive in order to ensure the normally of device and needing provide one it is sufficiently large lasting constant
Base current ensure device in the case of maximum conducting electric current also can normally, even if device is operated in less electric current
In the case of, the base current is also constant, so causes the waste of larger driving power consumption.Driven for traditional SiC BJT
The problem of power wastage, the driving of existing discrete type base current realize base current along with the change of collector current and
Direct proportion changes, but due to needing expensive D/A converter, DSP (digital signal processor, data signal
Processor) or FPGA (Field-Programmable Gate Array, field programmable gate array), ensure base stage
Electric current changes with collector current and needs complicated control method, and the phase delay time of D/A converter also is difficult to make
Obtain base current follows collector current to change in real time.
The content of the invention
Base current is realized for existing along with the change of collector current and direct proportion varying cost is higher and adopt
The defects of being postponed with D/A converter existence time, the invention provides a kind of static drive of silicon carbide bipolar junction transistor
Device and method.
A kind of static drive device of silicon carbide bipolar junction transistor provided by the invention, including：
Connected between the base stage and driving power of silicon carbide bipolar junction transistor a variable resistance unit, it is described can
Becoming resistance unit includes high speed silicon substrate field controller and a current-limiting resistance, and described current-limiting resistance one end connects the high speed silicon substrate
The source electrode of field controller, the other end connect the drain electrode of the high speed silicon substrate field controller；
The colelctor electrode of the silicon carbide bipolar junction transistor is connected with current sensing device, the current sensing device with
The grid of the high speed silicon substrate field controller connects with source electrode.
Further, the threshold voltage of the high speed silicon substrate field controller is 0 volt.
Further, the high speed silicon substrate field controller is adopted as semiconductcor field effect transistor or junction field effect transistor
Pipe.
Further, the current sensing device includes Hall sensor and an output resistance, the Hall sensor
It is connected in series with the output resistance, and the both ends of the output resistance are parallel to the high speed silicon substrate field controller respectively
Grid and source electrode.
On the other hand, the present invention also provides a kind of static drive of the silicon carbide bipolar junction transistor based on said apparatus
Method, including：
Current sensing device obtains the current value of the colelctor electrode of silicon carbide bipolar junction transistor in real time；
The gate voltage of high-speed silicon base field controller is worth to according to the electric current of the colelctor electrode；
The resistance value of variable resistance unit is determined according to the gate voltage of the high speed silicon substrate field controller；
Silicon carbide bipolar junction transistor base is determined according to the resistance value of the driving power and the variable resistance unit
The driving current of pole.
Further, the current sensing device includes Hall sensor and an output resistance, the Hall sensor
It is connected in series with the output resistance, and the both ends of the output resistance are parallel to the high speed silicon substrate field controller respectively
Grid and source electrode.
Further, the electric current according to the colelctor electrode is worth to the step of the gate voltage of high-speed silicon base field controller
Suddenly, including：
The Hall sensor passes through the output resistance connected with the Hall sensor according to the electric current of the colelctor electrode
Export an output voltage；
Gate voltage using the output voltage as the high speed silicon substrate field controller.
A kind of static drive device and method of silicon carbide bipolar junction transistor provided by the invention, it is double by carborundum
Pole junction transistor ideal base drive current changes according to the direct ratio of collector current, largely reduces base drive work(
Consumption, while effectively reduce and realize ideal base drive current variable costs, and essentially eliminate time delay.
Brief description of the drawings
The features and advantages of the present invention can be more clearly understood by reference to accompanying drawing, accompanying drawing is schematically without that should manage
Solve to carry out any restrictions to the present invention, in the accompanying drawings：
Fig. 1 is the structural representation of the drive device of silicon carbide bipolar junction transistor in one embodiment of the invention；
Fig. 2 is one embodiment of the invention high speed silicon substrate MOSFET characteristic curve schematic diagram；
Fig. 3 is the flow signal of the static drive method of silicon carbide bipolar junction transistor in one embodiment of the invention
Figure.
Embodiment
Technical solution of the present invention is further elaborated in conjunction with drawings and examples.
A kind of static drive device for silicon carbide bipolar junction transistor that the present embodiment provides, including：
Connected between the base stage and driving power of silicon carbide bipolar junction transistor a variable resistance unit, it is described can
Becoming resistance unit includes high speed silicon substrate field controller and a current-limiting resistance, and described current-limiting resistance one end connects the high speed silicon substrate
The source electrode of field controller, the other end connect the drain electrode of the high speed silicon substrate field controller；
The colelctor electrode of the silicon carbide bipolar junction transistor is connected with current sensing device, the current sensing device with
The grid of the high speed silicon substrate field controller connects with source electrode.
Further, the threshold voltage of the high speed silicon substrate field controller is 0 volt.
Further, the high speed silicon substrate field controller is adopted as semiconductcor field effect transistor MOSFET or junction type field effect
Answer transistor JFET.
Further, the current sensing device includes Hall sensor and an output resistance, the Hall sensor
It is connected in series with the output resistance, and the both ends of the output resistance are parallel to the high speed silicon substrate field controller respectively
Grid and source electrode.
For example, as shown in figure 1, present embodiment discloses a kind of drive device of silicon carbide bipolar junction transistor,
Wherein static importation includes：
In the base stage and driving power V of silicon carbide bipolar junction transistorSBetween connect a variable resistance unit, it is described
Variable resistance unit includes the high speed silicon substrate MOSFET and a current-limiting resistance R that threshold voltage is 0 volt, described current-limiting resistance one end
The source electrode of the high speed silicon substrate MOSFET is connected, the other end connects the drain electrode of the high speed silicon substrate MOSFET.
Wherein, the high speed silicon substrate MOSFET meets：A) threshold voltage of the high speed silicon substrate MOSFET is 0 volt or so.
Because when SiC BJT collector current becomes big since 0, Hall sensor detects the electric current and feeds back to silicon substrate field controller
Gate voltage be also since 0 change, the resistance of corresponding silicon substrate field controller also begins to change.B) the high speed silicon substrate
MOSFET resistance variations are close to linear change.It can so ensure MOSFET resistance variations with high speed silicon substrate MOSFET grids
Voltage is as far as possible close to direct proportion.C) high speed silicon substrate MOSFET switching speed is fast.Fast response time can so be ensured.D) it is high
Fast silicon substrate MOSFET power is larger, can ensure to bear base current.
The colelctor electrode of the silicon carbide bipolar junction transistor is connected with current sensing device, the current sensing device bag
Include Hall sensor and an output resistance ROUT, the Hall sensor and the output resistance ROUTIt is connected in series, and institute
State output resistance ROUTBoth ends be parallel to the grid and source electrode of the high speed silicon substrate field controller respectively.
When choosing the output resistance connected with Hall sensor, should ensure that corresponding with the electric current of Hall sensor detection
Output voltage range is in the resistance-variable area of the high speed silicon substrate MOSFET.
So, when carrying out ideal base drive current regulation and control, Hall sensor gathers the electric current of SiC BJT colelctor electrodes, then
The current signal exported according to the size of current of SiC BJT colelctor electrodes, and pass through output resistance ROUTBe converted to voltage signal
VGSPut on high speed silicon substrate MOSFET G-S the two poles of the earth.The size of base current is limited by current-limiting resistance R simultaneously.
When SiC BJT colelctor electrode no current by when, base current limits its size by current-limiting resistance R, and R values are by phase
The application scenario answered determines.When colelctor electrode has electric current and electric current declines, the output current after Hall sensor detection
Decline in proportion, the voltage on output resistance is VGSAlso decline in proportion, regulation and control high speed silicon substrate MOSFET resistance is near in proportion
Rise, base current closely declines in proportion.
High speed silicon substrate MOSFET as shown in Figure 2 transfer characteristic curve and RDS(on)Curve, the curve reflect the high speed silicon substrate
MOSFET resistance-variable area is close linear, the R so when grid voltage changesDS(on)Also the change of near-linear therewith.
On the other hand, as shown in figure 3, the present embodiment also provides a kind of silicon carbide bipolar junction type crystal based on said apparatus
The static drive method of pipe, including：
S1, current sensing device obtain the current value of the colelctor electrode of silicon carbide bipolar junction transistor in real time；
S2, the gate voltage of high-speed silicon base field controller is worth to according to the electric current of the colelctor electrode；
S3, the resistance value of variable resistance unit is determined according to the gate voltage of the high speed silicon substrate field controller；
S4, silicon carbide bipolar junction transistor is determined according to the resistance value of the driving power and the variable resistance unit
The driving current of base stage.
Further, the current sensing device includes Hall sensor and an output resistance, the Hall sensor
It is connected in series with the output resistance, and the both ends of the output resistance are parallel to the high speed silicon substrate field controller respectively
Grid and source electrode.
Further, the gate voltage of high-speed silicon base field controller is worth in the S2 according to the electric current of the colelctor electrode
The step of, including：
The Hall sensor passes through the output resistance connected with the Hall sensor according to the electric current of the colelctor electrode
Export an output voltage；
Gate voltage using the output voltage as the high speed silicon substrate field controller.
A kind of static drive device and method for silicon carbide bipolar junction transistor that the present embodiment provides, passes through carborundum
Bipolar junction transistor ideal base drive current changes according to the direct ratio of collector current, largely reduces base drive work(
Consumption, while effectively reduce and realize ideal base drive current variable costs, and essentially eliminate time delay.
Although being described in conjunction with the accompanying embodiments of the present invention, those skilled in the art can not depart from this hair
Various modifications and variations are made in the case of bright spirit and scope, such modifications and variations are each fallen within by appended claims
Within limited range.
Claims (7)
1. a kind of static drive device of silicon carbide bipolar junction transistor, it is characterised in that described device includes：
Connected between the base stage and driving power of silicon carbide bipolar junction transistor a variable resistance unit, it is described can power transformation
Resistance unit includes high speed silicon substrate field controller and a current-limiting resistance, and described current-limiting resistance one end connects the high speed silicon substrate field control
The source electrode of device, the other end connect the drain electrode of the high speed silicon substrate field controller；
The colelctor electrode of the silicon carbide bipolar junction transistor is connected with current sensing device, the current sensing device with it is described
The grid of high speed silicon substrate field controller connects with source electrode；
The grounded emitter of the silicon carbide bipolar junction transistor.
2. device according to claim 1, it is characterised in that the threshold voltage of the high speed silicon substrate field controller is 0 volt.
3. device according to claim 1, it is characterised in that the high speed silicon substrate field controller is adopted as semiconductcor field effect
Transistor or junction field effect transistor.
4. device according to claim 1, it is characterised in that the current sensing device includes Hall sensor and one
Output resistance, the Hall sensor are connected in series with the output resistance, and the both ends of the output resistance are in parallel respectively
In the grid and source electrode of the high speed silicon substrate field controller.
5. a kind of static drive method of the silicon carbide bipolar junction transistor based on any one of Claims 1-4 described device,
Characterized in that, methods described includes：
Current sensing device obtains the current value of the colelctor electrode of silicon carbide bipolar junction transistor in real time；
The gate voltage of high-speed silicon base field controller is worth to according to the electric current of the colelctor electrode；
The resistance value of variable resistance unit is determined according to the gate voltage of the high speed silicon substrate field controller；
Silicon carbide bipolar junction transistor base stage is determined according to the resistance value of the driving power and the variable resistance unit
Driving current.
6. according to the method for claim 5, it is characterised in that the current sensing device includes Hall sensor and one
Output resistance, the Hall sensor are connected in series with the output resistance, and the both ends of the output resistance are in parallel respectively
In the grid and source electrode of the high speed silicon substrate field controller.
7. according to the method for claim 6, it is characterised in that the electric current according to the colelctor electrode is worth to high-speed silicon
The step of gate voltage of base field controller, including：
The Hall sensor passes through the output resistance connected with the Hall sensor according to the electric current of the colelctor electrode and exported
One output voltage；
Gate voltage using the output voltage as the high speed silicon substrate field controller.
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| CN102356535A (en) * | 2009-03-20 | 2012-02-15 | 克里公司 | Rectifier with sic bipolar junction transistor rectifying elements |
| US8947154B1 (en) * | 2013-10-03 | 2015-02-03 | Avogy, Inc. | Method and system for operating gallium nitride electronics |
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| US8541787B2 (en) * | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
| US20140132312A1 (en) * | 2012-11-15 | 2014-05-15 | Fairchild Semiconductor Corporation | Efficiency optimized driver circuit |
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| CN102356535A (en) * | 2009-03-20 | 2012-02-15 | 克里公司 | Rectifier with sic bipolar junction transistor rectifying elements |
| US8947154B1 (en) * | 2013-10-03 | 2015-02-03 | Avogy, Inc. | Method and system for operating gallium nitride electronics |
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