CN104901668A - Static drive device and method for silicon-carbide bipolar junction transistor - Google Patents
Static drive device and method for silicon-carbide bipolar junction transistor Download PDFInfo
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- CN104901668A CN104901668A CN201510244410.5A CN201510244410A CN104901668A CN 104901668 A CN104901668 A CN 104901668A CN 201510244410 A CN201510244410 A CN 201510244410A CN 104901668 A CN104901668 A CN 104901668A
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Abstract
The invention relates to the technical field of semiconductors, and specifically relates to a static drive device and method for a silicon-carbide bipolar junction transistor. A variable resistor unit is connected in series between the base electrode of the silicon-carbide bipolar junction transistor and a drive power supply. The variable resistor unit comprises a high-speed silicon-based field control apparatus and a current-limiting resistor. One end of the current-limiting resistor is connected with the source electrode of the high-speed silicon-based field control apparatus, and the other end of the current-limiting resistor is connected with the drain electrode of the high-speed silicon-based field control apparatus. The collector electrode of the silicon-carbide bipolar junction transistor is connected with a current detector, and the current detector is connected with the grid electrode and source electrode of the high-speed silicon-based field control apparatus. Through the drive current of the base electrode of the silicon-carbide bipolar junction transistor, the drive consumption of the base electrode is greatly reduced according to the direct ratio change of the current of the collector electrode, and the cost of achieving the change of the drive current of the base electrode is reduced effectively. Moreover, the time delay is basically eliminated.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of static drive device and method of silicon carbide bipolar junction transistor.
Background technology
Along with the rise of carborundum (SiC) power device, SiC BJT (SiC Bipolar Junction Transistor, silicon carbide bipolar junction transistor) also because its high current gain, excellent high temperature resistant reliability, manufacture craft are simple and without advantages such as gate pole grid oxygen reliability problems, become one of the most attractive SiC construction of switch, thus be widely used.Its main feature has: the first, is different from traditional silicon BJT, and SiC BJT, due to its mode of operation closely monopole type device and have comparatively stable on state characteristic, overcomes that switching speed is slow, power consumption is large and the shortcoming such as safety operation area is little; Second, the conducting resistance of business-like 1200V SiC BJT and switching speed all with SiC MOSFET (SiC Metal-Oxide-Semiconductor Field-Effect Transistor, manufacturing silicon carbide semiconductor field-effect transistor) very nearly the same, but the chip size of SiC BJT but can reduce by 50%; 3rd, the manufacture craft compared with SiC MOSFET needs 13-16 block mask plate, as long as the manufacture craft process 7-9 block mask plate of SiC BJT, therefore has more simple manufacturing process and lower cost; Four, SiC BJT does not have the grid oxygen reliability problem of SiC MOSFET.But, because SiC BJT is current mode drive device, its base stage needs to provide lasting electric current to ensure the normally of device, and because SiC BJT device and Si BJT device property have very large difference, therefore the driving of Si BJT can not be applied to SiC BJT completely, so drive the Main Bottleneck having become restriction SiC BJT application.
Traditional SiC BJT drive the normally in order to ensure device and need to provide an enough large sustained base current to ensure device also can normally when maximum On current, even if devices function is under less current conditions, this base current is also constant, causes the waste of larger driving power consumption like this.For the problem of traditional SiC BJT driving power consumption waste, existing discrete type base current drives and achieves base current direct proportion change along with the change of collector current, but owing to needing expensive D/A converter, DSP (digital signal processor, digital signal processor) or FPGA (Field-Programmable Gate Array, field programmable gate array), ensure that base current needs complicated control method with collector current change, and the phase delay time of D/A converter is also difficult to make the real-time follow set electrode current change of base current.
Summary of the invention
For existing realize base current along with the change of collector current the higher and defect that adopts D/A converter life period to postpone of direct proportion change cost, the invention provides a kind of static drive device and method of silicon carbide bipolar junction transistor.
The static drive device of a kind of silicon carbide bipolar junction transistor provided by the invention, comprising:
In base stage and a variable resistance unit of connecting between driving power of silicon carbide bipolar junction transistor, described variable resistance unit comprises the silica-based field controller of high speed and a current-limiting resistance, described current-limiting resistance one end connects the source electrode of the silica-based field controller of described high speed, and the other end connects the drain electrode of the silica-based field controller of described high speed;
The collector electrode of described silicon carbide bipolar junction transistor is connected with current sensing device, and grid and the source electrode of described current sensing device and the silica-based field controller of described high speed are connected.
Further, the threshold voltage of the silica-based field controller of described high speed is 0 volt.
Further, the silica-based field controller of described high speed is adopted as semiconductcor field effect transistor or junction field effect transistor.
Further, described current sensing device comprises Hall element and an output resistance, and described Hall element and described output resistance are connected in series, and the two ends of described output resistance are parallel to grid and the source electrode of the silica-based field controller of described high speed respectively.
On the other hand, the present invention also provides a kind of static drive method of the silicon carbide bipolar junction transistor based on said apparatus, comprising:
The current value of the collector electrode of current sensing device Real-time Obtaining silicon carbide bipolar junction transistor;
The gate voltage of the silica-based field controller of high speed is obtained according to the current value of described collector electrode;
According to the resistance value of the gate voltage determination variable resistance unit of the silica-based field controller of described high speed;
According to the drive current of the resistance value determination silicon carbide bipolar junction transistor base stage of described driving power and described variable resistance unit.
Further, described current sensing device comprises Hall element and an output resistance, and described Hall element and described output resistance are connected in series, and the two ends of described output resistance are parallel to grid and the source electrode of the silica-based field controller of described high speed respectively.
Further, the described current value according to described collector electrode obtains the step of the gate voltage of the silica-based field controller of high speed, comprising:
Described Hall element exports an output voltage according to the electric current of described collector electrode through the output resistance of connecting with described Hall element;
Using the gate voltage of described output voltage as the silica-based field controller of described high speed.
The static drive device and method of a kind of silicon carbide bipolar junction transistor provided by the invention, changed according to the direct ratio of collector current by silicon carbide bipolar junction transistor ideal base drive current, reduce base drive power consumption to a great extent, effectively reduce simultaneously and realize ideal base drive current variable costs, and essentially eliminate time delay.
Accompanying drawing explanation
Can understanding the features and advantages of the present invention clearly by reference to accompanying drawing, accompanying drawing is schematic and should not be construed as and carry out any restriction to the present invention, in the accompanying drawings:
Fig. 1 is the structural representation of the drive unit of silicon carbide bipolar junction transistor in one embodiment of the invention;
Fig. 2 is the characteristic curve schematic diagram of the silica-based MOSFET of one embodiment of the invention high speed;
Fig. 3 is the schematic flow sheet of the static drive method of silicon carbide bipolar junction transistor in one embodiment of the invention.
Embodiment
Now in conjunction with the accompanying drawings and embodiments technical solution of the present invention is further elaborated.
The static drive device of a kind of silicon carbide bipolar junction transistor that the present embodiment provides, comprising:
In base stage and a variable resistance unit of connecting between driving power of silicon carbide bipolar junction transistor, described variable resistance unit comprises the silica-based field controller of high speed and a current-limiting resistance, described current-limiting resistance one end connects the source electrode of the silica-based field controller of described high speed, and the other end connects the drain electrode of the silica-based field controller of described high speed;
The collector electrode of described silicon carbide bipolar junction transistor is connected with current sensing device, and grid and the source electrode of described current sensing device and the silica-based field controller of described high speed are connected.
Further, the threshold voltage of the silica-based field controller of described high speed is 0 volt.
Further, the silica-based field controller of described high speed is adopted as semiconductcor field effect transistor MOSFET or junction field effect transistor JFET.
Further, described current sensing device comprises Hall element and an output resistance, and described Hall element and described output resistance are connected in series, and the two ends of described output resistance are parallel to grid and the source electrode of the silica-based field controller of described high speed respectively.
For example, as shown in Figure 1, present embodiment discloses a kind of drive unit of silicon carbide bipolar junction transistor, wherein static importation comprises:
At base stage and the driving power V of silicon carbide bipolar junction transistor
sbetween series connection a variable resistance unit, described variable resistance unit comprises high speed silica-based MOSFET and the current-limiting resistance R that threshold voltage is 0 volt, described current-limiting resistance one end connects the source electrode of the silica-based MOSFET of described high speed, and the other end connects the drain electrode of the silica-based MOSFET of described high speed.
Wherein, the silica-based MOSFET of described high speed meets: a) threshold voltage of the silica-based MOSFET of described high speed is about 0 volt.Because when the collector current of SiC BJT becomes large from 0, Hall element detects this electric current and feeds back to the gate voltage also change from 0 of silica-based field controller, and the resistance of corresponding silica-based field controller also starts change.B) resistance variations of the silica-based MOSFET of described high speed is close to linear change.The resistance variations of MOSFET can be ensured like this with the silica-based MOSFET grid voltage of high speed as far as possible close to direct proportion.C) switching speed of the silica-based MOSFET of high speed wants fast.Fast response time can be ensured like this.D) power of the silica-based MOSFET of high speed is comparatively large, can ensure to bear base current.
The collector electrode of described silicon carbide bipolar junction transistor is connected with current sensing device, and described current sensing device comprises Hall element and an output resistance R
oUT, described Hall element and described output resistance R
oUTbe connected in series, and described output resistance R
oUTtwo ends be parallel to grid and the source electrode of the silica-based field controller of described high speed respectively.
When choosing the output resistance of connecting with Hall element, should ensure that the output voltage range corresponding with the electric current that Hall element detects is in the resistance-variable district of the silica-based MOSFET of described high speed.
Like this, when carrying out ideal base drive current regulation and control, Hall element gathers the electric current of SiC BJT collector electrode, then according to the current signal that the size of current of SiC BJT collector electrode exports, and by output resistance R
oUTbe converted to voltage signal V
gSput on G-S the two poles of the earth of the silica-based MOSFET of high speed.Limited the size of base current by current-limiting resistance R simultaneously.
When the collector electrode no current of SiC BJT passes through, base current limits its size by current-limiting resistance R, and R value is determined by corresponding application scenario.When collector electrode has electric current and electric current declines, the output current after Hall element detects also declines in proportion, the voltage on output resistance and V
gSalso decline in proportion, the resistance of the silica-based MOSFET of regulation and control high speed rises closely in proportion, and base current declines closely in proportion.
The transfer characteristic curve of the silica-based MOSFET of high speed and R as shown in Figure 2
dS (on)curve, this curve reflects that the resistance-variable district of the silica-based MOSFET of this high speed is close to linear, the R when grid voltage changes like this
dS (on)also the change of near-linear thereupon.
On the other hand, as shown in Figure 3, the present embodiment also provides a kind of static drive method of the silicon carbide bipolar junction transistor based on said apparatus, comprising:
S1, the current value of the collector electrode of current sensing device Real-time Obtaining silicon carbide bipolar junction transistor;
S2, obtains the gate voltage of the silica-based field controller of high speed according to the current value of described collector electrode;
S3, according to the resistance value of the gate voltage determination variable resistance unit of the silica-based field controller of described high speed;
S4, according to the drive current of the resistance value determination silicon carbide bipolar junction transistor base stage of described driving power and described variable resistance unit.
Further, described current sensing device comprises Hall element and an output resistance, and described Hall element and described output resistance are connected in series, and the two ends of described output resistance are parallel to grid and the source electrode of the silica-based field controller of described high speed respectively.
Further, obtain the step of the gate voltage of the silica-based field controller of high speed in described S2 according to the current value of described collector electrode, comprising:
Described Hall element exports an output voltage according to the electric current of described collector electrode through the output resistance of connecting with described Hall element;
Using the gate voltage of described output voltage as the silica-based field controller of described high speed.
The static drive device and method of a kind of silicon carbide bipolar junction transistor that the present embodiment provides, changed according to the direct ratio of collector current by silicon carbide bipolar junction transistor ideal base drive current, reduce base drive power consumption to a great extent, effectively reduce simultaneously and realize ideal base drive current variable costs, and essentially eliminate time delay.
Although describe embodiments of the present invention by reference to the accompanying drawings, but those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, such amendment and modification all fall into by within claims limited range.
Claims (7)
1. a static drive device for silicon carbide bipolar junction transistor, is characterized in that, described device comprises:
In base stage and a variable resistance unit of connecting between driving power of silicon carbide bipolar junction transistor, described variable resistance unit comprises the silica-based field controller of high speed and a current-limiting resistance, described current-limiting resistance one end connects the source electrode of the silica-based field controller of described high speed, and the other end connects the drain electrode of the silica-based field controller of described high speed;
The collector electrode of described silicon carbide bipolar junction transistor is connected with current sensing device, and grid and the source electrode of described current sensing device and the silica-based field controller of described high speed are connected.
2. device according to claim 1, is characterized in that, the threshold voltage of the silica-based field controller of described high speed is 0 volt.
3. device according to claim 1, is characterized in that, the silica-based field controller of described high speed is adopted as semiconductcor field effect transistor or junction field effect transistor.
4. device according to claim 1, it is characterized in that, described current sensing device comprises Hall element and an output resistance, described Hall element and described output resistance are connected in series, and the two ends of described output resistance are parallel to grid and the source electrode of the silica-based field controller of described high speed respectively.
5. based on a static drive method for the silicon carbide bipolar junction transistor of device described in any one of Claims 1-4, it is characterized in that, described method comprises:
The current value of the collector electrode of current sensing device Real-time Obtaining silicon carbide bipolar junction transistor;
The gate voltage of the silica-based field controller of high speed is obtained according to the current value of described collector electrode;
According to the resistance value of the gate voltage determination variable resistance unit of the silica-based field controller of described high speed;
According to the drive current of the resistance value determination silicon carbide bipolar junction transistor base stage of described driving power and described variable resistance unit.
6. method according to claim 5, it is characterized in that, described current sensing device comprises Hall element and an output resistance, described Hall element and described output resistance are connected in series, and the two ends of described output resistance are parallel to grid and the source electrode of the silica-based field controller of described high speed respectively.
7. method according to claim 6, is characterized in that, the described current value according to described collector electrode obtains the step of the gate voltage of the silica-based field controller of high speed, comprising:
Described Hall element exports an output voltage according to the electric current of described collector electrode through the output resistance of connecting with described Hall element;
Using the gate voltage of described output voltage as the silica-based field controller of described high speed.
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| CN108075755A (en) * | 2016-11-11 | 2018-05-25 | 台达电子工业股份有限公司 | Power module and its control method |
| CN114499429A (en) * | 2022-02-14 | 2022-05-13 | 揭阳市科和电子实业有限公司 | Triode chip identification gain device |
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| US20110012130A1 (en) * | 2009-07-15 | 2011-01-20 | Qingchun Zhang | High Breakdown Voltage Wide Band-Gap MOS-Gated Bipolar Junction Transistors with Avalanche Capability |
| CN102356535A (en) * | 2009-03-20 | 2012-02-15 | 克里公司 | Rectifier with sic bipolar junction transistor rectifying elements |
| US20140132312A1 (en) * | 2012-11-15 | 2014-05-15 | Fairchild Semiconductor Corporation | Efficiency optimized driver circuit |
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| CN102356535A (en) * | 2009-03-20 | 2012-02-15 | 克里公司 | Rectifier with sic bipolar junction transistor rectifying elements |
| US20110012130A1 (en) * | 2009-07-15 | 2011-01-20 | Qingchun Zhang | High Breakdown Voltage Wide Band-Gap MOS-Gated Bipolar Junction Transistors with Avalanche Capability |
| US20140132312A1 (en) * | 2012-11-15 | 2014-05-15 | Fairchild Semiconductor Corporation | Efficiency optimized driver circuit |
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| CN108075755A (en) * | 2016-11-11 | 2018-05-25 | 台达电子工业股份有限公司 | Power module and its control method |
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| CN114499429A (en) * | 2022-02-14 | 2022-05-13 | 揭阳市科和电子实业有限公司 | Triode chip identification gain device |
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