CN208461684U - The adjustable power semiconductor modular of gate electrode resistance - Google Patents
The adjustable power semiconductor modular of gate electrode resistance Download PDFInfo
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- CN208461684U CN208461684U CN201821378056.0U CN201821378056U CN208461684U CN 208461684 U CN208461684 U CN 208461684U CN 201821378056 U CN201821378056 U CN 201821378056U CN 208461684 U CN208461684 U CN 208461684U
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- gate electrode
- electrode resistance
- power semiconductor
- determination unit
- semiconductor chip
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Abstract
The utility model relates to a kind of adjustable power semiconductor modulars of gate electrode resistance, with power semiconductor chip, the gate pole of the power semiconductor chip is connected with driving circuit, the driving circuit is according to the level signal being provided, adjust the size of the gate electrode resistance of the power semiconductor modular, it is characterized in that, the power semiconductor modular includes determination unit, which is measured the switching speed of the power semiconductor modular；And gate electrode resistance adjustment unit, the gate electrode resistance adjustment unit are adjusted the gate electrode resistance according to the measured value of the determination unit.
Description
Technical field
It is adjustable come the gate electrode resistance for maintaining switching speed stable by adjusting switch resistance that the utility model relates to a kind of
Power semiconductor modular.
Background technique
IPM (Intelligent Power Module: intelligent power module) is a kind of by power electronics and integrated circuit
The power drive class product that technology combines, is integrated with device for power switching and driving circuit.It by high-speed low-power-consumption tube core,
The gate drive circuit and fast protection circuit of optimization are constituted.Even if load accident situation or improper use occurs, it is also ensured that
IPM itself is not damaged, integrated level and reliability with higher.Therefore it is widely used in the frequency converter of driving motor and each
Kind inverter, is frequency control, metallurgical machinery, electric propulsion, servo-drive, a kind of ideal power electronics of frequency-conversion domestic electric appliances
Device.
IPM generally uses IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor)
As power switch component, have the advantages that switching speed is fast, driving power is small, capacity is big and saturation voltage drop is low etc..Current
IGBT has positive temperature characterisitic, and when junction temperature rises, switching speed slows down.The switching speed of IGBT is driven by gate pole again simultaneously
The influence of dynamic resistance, as driving resistance increases, switching speed slows down.
Previous switch control mode does not have by the way that independent control of the switch resistance realization to switching speed is respectively set
In view of electric current, the influence of temperature, i.e., without being adjusted for different electric current and temperature to switching speed.
Switching speed increases with the increase of electric current, also will appear what speed increased suddenly when electric current is very small
Phenomenon.Switching speed reduces with the increase of temperature.If switch speed certainly will be cannot keep using changeless switch resistance
The consistency of degree.The increase of switching speed can generate noise and movement safety problem, and slowing down for switching speed will increase damage
Consumption, influences efficiency.
Utility model content
Utility model technical problem to be solved
The switching speed of IGBT changes according to the size for the gate electrode resistance being connected with driving circuit.Current driving design
Changeless gate-drive resistance is all used, the stabilization for realizing switching speed is tried hard to.But the chip due to having in IGBT
Junction temperature is related to environment temperature, operating condition, may change at any time.That is IGBT its switch under different operating conditions
Speed is influenced to generate variation by junction temperature.
If selecting gate-drive resistance according to room temperature operating condition, switching speed will be slack-off at high temperature, causes to damage
Consumption etc. rises.If selecting gate-drive resistance according to worst hot case, switching speed will become faster at room temperature, lead to electricity
Compression etc. rises.
Purpose of utility model
The utility model considers the above problem and realizes, its purpose is to provide one kind by adjusting switch resistance
Carry out the adjustable power semiconductor modular of gate electrode resistance for changing gate-drive resistance in real time, maintaining switching speed stable.
Solve the technical solution of technical problem
The utility model provides a kind of adjustable power semiconductor modular of gate electrode resistance, has power semiconductor chip,
The gate pole of the power semiconductor chip is connected with driving circuit, and the driving circuit adjusts institute according to the level signal being provided
State the size of the gate electrode resistance of power semiconductor modular, which is characterized in that the power semiconductor modular includes determination unit,
The determination unit is measured the switching speed of the power semiconductor modular；And gate electrode resistance adjustment unit, the gate pole
Resistance adjustment unit is adjusted the gate electrode resistance according to the measured value of the determination unit.
The adjustable power semiconductor modular of gate electrode resistance described in the one aspect of the utility model, the determination unit
Has the amperometric determination unit being electrical connected with the power semiconductor chip, which passes through described in detection flow direction
The size of current of semiconductor chip measures the switching speed, and the amperometric determination unit is big according to the electric current detected
The small adjustment gate electrode resistance, in the case where the electric current increases, the gate electrode resistance adjustment unit makes the gate electrode resistance
Increase, in the case where the electric current reduces, the gate electrode resistance adjustment unit reduces the gate electrode resistance.
The adjustable power semiconductor modular of gate electrode resistance described in the other side of the utility model, the power half
Conductor chip is connected via electrical cable with the determination unit, and the determination unit has and the power semiconductor chip
Connected voltage measuring unit for measuring, the both end voltage which passes through inductance possessed by the detection electrical cable
Variation measure the switching speed, the gate electrode resistance adjustment unit adjusts the gate pole according to the voltage detected
Resistance, in the case where the voltage increases, the gate electrode resistance adjustment unit increases the gate electrode resistance, in the voltage
In the case where reduction, the gate electrode resistance adjustment unit reduces the gate electrode resistance.
The adjustable power semiconductor modular of gate electrode resistance described in the other side of the utility model, the measurement are single
Member, which has, forms integrated temperature measurement unit with the power semiconductor chip, and the temperature measurement unit is by detecting the function
The junction temperature of rate semiconductor chip itself measures the switching speed, and the temperature measurement unit is according to the junction temperature detected
The gate electrode resistance is adjusted, in the case where the temperature measurement unit detects the raised situation of the junction temperature, the gate electrode resistance tune
Whole unit reduces the gate electrode resistance, in the case where the temperature measurement unit detects that the junction temperature reduces, the door
Electrode resistance adjustment unit increases the gate electrode resistance.
The utility model also provides a kind of adjustable power semiconductor modular of gate electrode resistance, has power semiconductor chip
Piece, the gate electrode resistance and thermistor of the power semiconductor chip are connected in series.
The adjustable power semiconductor modular of gate electrode resistance described in the other side of the utility model, the temperature-sensitive electricity
Resistance has negative temperature characteristic.
Utility model effect
According to the adjustable power semiconductor modular of above-mentioned gate electrode resistance, by spy relevant to the switching speed of IGBT
Property value is measured, and changes the value of the gate electrode resistance of power semiconductor modular in real time according to measured value, so that IGBT be kept to open
Logical and stability of the turn-off speed under different junction temperatures.IGBT is set to keep steady operation with safety and efficient state.
Detailed description of the invention
Fig. 1 is the system block diagram of the power semiconductor modular of the utility model.
Fig. 2 be the utility model relates to embodiment 1 power semiconductor chip circuit structure diagram.
Fig. 3 be the utility model relates to embodiment 2 power semiconductor chip circuit structure diagram.
Fig. 4 be the utility model relates to embodiment 3 power semiconductor chip circuit structure diagram.
Fig. 5 is voltage and temperature when the forward current of the diode in the power semiconductor chip of the utility model is smaller
Relational graph.
Fig. 6 is the circuit structure diagram of the power semiconductor chip of the variation of the utility model.
Specific embodiment
Fig. 1 shows the system block diagram of the power semiconductor modular of the utility model.The power semiconductor modular 1 includes:
Gate electrode resistance adjustment unit 3, driving circuit 4, determination unit 10 and IGBT 100.The gate electrode resistance adjustment unit 3 has letter
Number amplifying unit 2, photoelectric coupling unit for promoting inhibition 6 and logic control circuit 8.
External signal is transferred to gate electrode resistance adjustment unit 3, passes through photoelectric coupling unit for promoting inhibition in gate electrode resistance adjustment unit 3
6 are converted and are transmitted to logic control circuit 8.Logic control circuit 8 according to the signal that receives generate to gate electrode resistance into
The signal of row adjustment is simultaneously exported.The adjustment signal exported is transferred to signal amplification unit 2 and amplifies.It is single through amplification
The signal of 2 amplification of member is transferred to driving circuit 4.
The resistance and resistance switch being connected in series in the driving circuit 4 with multiple groups, the resistance and resistance switch are by bridge
It connects.Control signal provided by signal amplification unit 2 controls the conduction and cut-off of the resistance switch in the driving circuit 4,
The resistance value for exporting the driving circuit 4 increases or reduces.Since the gate pole of the driving circuit 4 and IGBT 100 are connected in series,
When the resistance value of the driving circuit 4 changes, the driving resistance being connected with the gate pole of IGBT 100 changes.To change
The voltage value for being applied to the IGBT gate pole carrys out control switch speed.
Shown on the right side of Fig. 1, IGBT 100 is that igbt chip is made of double pole triode and diode.Wherein, IGBT
100 gate pole G is connected with driving circuit 4.Determination unit 10 and IGBT 100 is hot or is electrical connected, to the electricity of IGBT 100
The characteristics such as stream, voltage or temperature are measured, and the characteristic variations being measured to are transmitted to gate electrode resistance adjustment unit 3.
In the gate electrode resistance adjustment unit 3, logic control circuit 8 generates therewith according to the signal of the reflection characteristic variations received
Corresponding control signal is simultaneously input to signal amplification unit 2.Control signal is transmitted to driving after amplifying via signal amplification unit 2
Circuit 4, driving circuit 4 is according to the control signal received, to what is be connected in series in the driving circuit 4, with each bridge resistance
The conduction and cut-off of resistance switch is controlled.By the control, so that the driving resistance that driving circuit 4 is exported to IGBT 100
Resistance value change.Thus adjustment is applied to the driving voltage of 100 gate pole of IGBT, to change the switching speed of IGBT.
It enables switching speed keep stablizing, power semiconductor modular is made to keep steady operation with safety and efficient state.
Embodiment 1
Fig. 2 shows the circuit structure diagrams of igbt chip described in embodiment 1.Igbt chip is by double pole triode and two
Pole pipe composition.The gate pole G of the triode is connected with driving circuit 4, the diode and amperometric determination unit 10a electrical property phase
Even.The amperometric determination unit 10a being connected with the diode in IGBT 100 is measured the electric current for flowing through IGBT 100.
When detecting that the electric current for flowing through diode increases, it is known that the switching speed of IGBT 100 also increases with it.Electric current
Determination unit 10a will test the signal for indicating that electric current increases and be transmitted to logic control circuit 8, the logic control circuit 8
According to the signal received, corresponding control signal is generated, that is, the signal for reducing switching speed.The control signal is through putting
Driving circuit 4 is transferred to after big, driving circuit 4, will be electric with the concatenated driving of the gate pole G of IGBT 100 according to the control signal
Resistance increases.Since the driving resistance of gate pole G increases, then the electric current for flowing through IGBT 100 reduces, to make the switch of IGBT 100
Speed reduces.
When detecting that the electric current for flowing through diode reduces, it is known that the switching speed of IGBT 100 also reduces therewith.Electric current
Determination unit 10a will test the signal for indicating that electric current reduces and be transmitted to logic control circuit 8, the logic control circuit 8
According to the signal received, corresponding control signal is generated, that is, the signal for improving switching speed.The control signal is through putting
Driving circuit 4 is transferred to after big, driving circuit 4, will be electric with the concatenated driving of the gate pole G of IGBT 100 according to the control signal
Resistance reduces.Since the driving resistance of gate pole G reduces, then the electric current for flowing through IGBT 100 increases, to make the switch of IGB 100T
Speed increases.
It is detected by the electric current in the diode as described above to IGBT 100, thus according to the electric current detected
The driving resistance of variation adjustment gate pole G in real time, enables switching speed keep stablizing, and makes power semiconductor modular with safety and efficient
State keeps steady operation.
Embodiment 2
Fig. 3 shows the circuit structure diagram of igbt chip as described in example 2.With embodiment 1 the difference lies in that described
The emitter E of voltage measuring unit for measuring 10b and triode is electrical connected to replace amperometric determination unit 10a, other parts and implementation
1 structure of example is identical therefore uses identical label and omits the description.
The voltage measuring unit for measuring 10b being electrical connected with the emitter E of IGBT 100 is to flowing through the hair for being connected on IGBT 100
The variation of the both end voltage of inductance I on emitter-base bandgap grading is measured.
When detecting that the change frequency for flowing through the voltage of the inductance I increases, it is known that the switching speed of IGBT 100 subtracts
It is small.The signal that the expression voltage change frequency that voltage measuring unit for measuring 10b will test increases is transmitted to logic control circuit 8, should
Logic control circuit 8 generates corresponding control signal according to the signal received, that is, the signal for improving switching speed.
The control signal is amplified to be transferred to driving circuit 4, and driving circuit 4 makes the door with IGBT 100 according to the control signal
The driving resistance that pole G is connected in series increases.Since the driving resistance of gate pole G increases, then the variation of the voltage of the inductance I is flowed through
Frequency reduces, and reduces the switching speed of IGBT 100.
When detecting that the change frequency for flowing through the voltage of the inductance I reduces, it is known that the switching speed of IGBT 100 increases
Greatly.The signal that the expression voltage change frequency that voltage measuring unit for measuring 10b will test reduces is transmitted to logic control circuit 8, should
Logic control circuit 8 generates corresponding control signal according to the signal received, that is, the signal for reducing switching speed.
The control signal is amplified to be transferred to driving circuit 4, and driving circuit 4 makes the door with IGBT 100 according to the control signal
The driving resistance of the series connection of pole G reduces.Since the driving resistance of gate pole G reduces, then the change of the voltage of the inductance I is flowed through
Change frequency to increase, increases the switching speed of IGBT 100.
It is detected by the change frequency of the voltage as described above to the inductance I of IGBT 100, thus according to
The change frequency of the voltage detected adjusts the driving resistance of gate pole G in real time, enable switching speed keep stablize, make igbt chip with
Safety and efficient state holding steady operation.
Embodiment 3
Fig. 4 shows the circuit structure diagram of igbt chip described in embodiment 3.With embodiment 1 the difference lies in that using
Integrated temperature measurement unit 10c is formed with the IGBT to replace amperometric determination unit 10a, other parts and 1 knot of embodiment
Structure is identical therefore uses identical label and omits the description.
In the lesser situation of forward current of diode, the relationship of forward voltage drop and temperature is as shown in figure 5, present good
Good linear relationship, therefore can use the detection that the characteristic relation carries out temperature.That is, temperature is higher, the positive pressure of diode
Drop is lower, and the switching speed of IGBT is higher.The temperature of the diode is the junction temperature of chip of IGBT.
Temperature measurement unit 10c is formed in inside igbt chip, is detected to the temperature change of diode.When detecting
When the junction temperature of IGBT increases, it is known that the forward voltage drop of diode is lower, i.e. the switching speed of IGBT reduces.Temperature measurement unit
The raised signal of expression junction temperature that 10c will test is transmitted to logic control circuit 8, and the logic control circuit 8 is according to receiving
Signal, generate corresponding control signal, that is, improve the signal of switching speed.The control signal is amplified to be transmitted
To driving circuit 4, driving circuit 4 subtracts the driving resistance for the gate pole G being connected in series with IGBT 100 according to the control signal
It is small.Since the driving resistance of gate pole G reduces, then forward voltage drop reduces, and increases the switching speed of IGBT 100.
When the junction temperature for detecting IGBT 100 reduces, it is known that the forward voltage drop of diode increases, i.e. the switch speed of IGBT
Degree increases.The raised signal of expression junction temperature that temperature measurement unit 10c will test is transmitted to logic control circuit 8, the logic
Control circuit 8 generates corresponding control signal, that is, reduce the signal of switching speed according to the signal received.The control
Signal is amplified to be transferred to driving circuit 4, and driving circuit 4 connects the gate pole G with IGBT 100 according to the control signal
The driving resistance of connection increases.Since the driving resistance of gate pole G increases, then forward voltage drop increases, and makes the switch speed of IGBT 100
Degree reduces.
By being detected as described above to the junction temperature of chip of IGBT, to adjust door in real time according to the junction temperature detected
The driving resistance of pole G enables switching speed keep stablizing, and power semiconductor modular is made to keep stablizing work with safety and efficient state
Make.
Variation
Fig. 6 shows the circuit structure diagram of the igbt chip of variation.IGBT junction temperature shown in fig. 5 is utilized in the variation
It is completed with the relationship of voltage.The variation and above-described embodiment 1-3's the difference lies in that not using determination unit and gate pole electricity
Hinder adjustment unit.But thermistor is connected in series on the gate pole G of IGBT.The thermistor has negative temperature characteristic.
The variation relation of switching speed and gate electrode resistance previously according to IGBT 100 sets the thermistor appropriate
Negative temperature coefficient, so that the thermistor is according to its own resistance value of the variation adjust automatically of the junction temperature of chip of IGBT 100.When
When the junction temperature of IGBT 100 rises, the resistance value of the thermistor reduces automatically, i.e., becomes smaller with the gate pole G resistance being connected in series.
To make the voltage of IGBT 100 reduce, the switching speed of IGBT 100 increases.Conversely, when the decline of the junction temperature of IGBT 100,
The resistance value of the thermistor is automatically increased, i.e., the resistance being connected in series with gate pole G increases.To make the voltage liter of IGBT 100
The switching speed of height, IGBT 100 reduces.
By as described above using have negative temperature characteristic thermistor, thus make and the gate pole G of IGBT 100 go here and there
The resistance of connection connection is automatically adjusted in real time with variations injunction temperature, is enabled switching speed keep stablizing, is made power semiconductor modular
Steady operation is kept with safety and efficient state.
In above-mentioned variation, different gate electrode resistance driving methods can also be configured to the IGBT under different junction temperatures in advance
And the corresponding relationship is written in logic control circuit 8.In running, it can selected by real-time monitoring junction temperature
It selects different gate electrode resistance modes to be driven, exports corresponding driving resistance to igbt chip, to reach stable switch speed
The effect of degree.
The utility model is not limited to above-described embodiment and variation, also includes various modifications example.For example, in order to say
It is understood that when bright the utility model, is described in detail by above embodiment, but be not limited to have described
Bright all structures.Furthermore, it is possible to the part-structure of a certain embodiment is replaced with to the structure of other embodiments, it can also be to certain
The structure of the additional other embodiments of the structure of one embodiment.In addition, being directed to a part of each embodiment, other structures can be carried out
Addition, deletion, replacement.
For example, gate electrode resistance adjustment unit 3 is located at the inside of power semiconductor modular 1 in the utility model, but can also
It to be set to the outside of power semiconductor modular 1.Above-described embodiment 3 can be combined with embodiment 1 or embodiment 2 to be come in fact
It applies.
Label declaration
1 power semiconductor modular
3 gate electrode resistance adjustment units
2 signal amplification units
4 driving circuits
6 photoelectric coupling unit for promoting inhibition
8 logic control circuits
10 determination units
10a amperometric determination unit
10b voltage measuring unit for measuring
10c temperature measurement unit
100 IGBT
Claims (6)
1. a kind of adjustable power semiconductor modular of gate electrode resistance has power semiconductor chip, the power semiconductor chip
The gate pole of piece is connected with driving circuit, and the driving circuit adjusts the power semiconductor mould according to the level signal being provided
The size of the gate electrode resistance of block, which is characterized in that the power semiconductor modular includes
Determination unit, the determination unit are measured the switching speed of the power semiconductor modular；And
Gate electrode resistance adjustment unit, the gate electrode resistance adjustment unit is according to the measured value of the determination unit to the gate electrode resistance
It is adjusted.
2. the adjustable power semiconductor modular of gate electrode resistance as described in claim 1, which is characterized in that
The determination unit has the amperometric determination unit being electrical connected with the power semiconductor chip, the amperometric determination unit
It flows to the size of current of the semiconductor chip by detecting and measures the switching speed,
The amperometric determination unit adjusts the gate electrode resistance according to the size of current detected, increases in the electric current
In the case of, the gate electrode resistance adjustment unit increases the gate electrode resistance, in the case where the electric current reduces, the gate pole
Resistance adjustment unit reduces the gate electrode resistance.
3. the adjustable power semiconductor modular of gate electrode resistance as described in claim 1, which is characterized in that
The power semiconductor chip is connected via electrical cable with the determination unit,
The determination unit has the voltage measuring unit for measuring being connected with the power semiconductor chip, which passes through
The variation of the both end voltage of inductance possessed by the electrical cable is detected to measure the switching speed,
The gate electrode resistance adjustment unit adjusts the gate electrode resistance according to the voltage detected, increases in the voltage
In the case of, the gate electrode resistance adjustment unit increases the gate electrode resistance, in the case where the voltage reduces, the gate pole
Resistance adjustment unit reduces the gate electrode resistance.
4. the adjustable power semiconductor modular of gate electrode resistance as claimed any one in claims 1 to 3, which is characterized in that
The determination unit, which has, forms integrated temperature measurement unit with the power semiconductor chip, the temperature measurement unit
The switching speed is measured by detecting the junction temperature of the power semiconductor chip itself,
The temperature measurement unit adjusts the gate electrode resistance according to the junction temperature detected, examines in the temperature measurement unit
It measures in the raised situation of the junction temperature, the gate electrode resistance adjustment unit reduces the gate electrode resistance, examines in the temperature
In the case where surveying element testing to junction temperature reduction, the gate electrode resistance adjustment unit increases the gate electrode resistance.
5. a kind of adjustable power semiconductor modular of gate electrode resistance has power semiconductor chip, which is characterized in that
The gate pole and thermistor of the power semiconductor chip are connected in series.
6. the adjustable power semiconductor modular of gate electrode resistance as claimed in claim 5, which is characterized in that
The thermistor has negative temperature characteristic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821378056.0U CN208461684U (en) | 2018-08-24 | 2018-08-24 | The adjustable power semiconductor modular of gate electrode resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821378056.0U CN208461684U (en) | 2018-08-24 | 2018-08-24 | The adjustable power semiconductor modular of gate electrode resistance |
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| CN208461684U true CN208461684U (en) | 2019-02-01 |
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ID=65178826
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| CN201821378056.0U Active CN208461684U (en) | 2018-08-24 | 2018-08-24 | The adjustable power semiconductor modular of gate electrode resistance |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111817641A (en) * | 2020-06-01 | 2020-10-23 | 上海三菱电机·上菱空调机电器有限公司 | Inverter circuit of variable frequency air conditioner outdoor unit and driving control method of inverter circuit |
| CN111817555A (en) * | 2020-06-01 | 2020-10-23 | 上海三菱电机·上菱空调机电器有限公司 | Driving resistance adjustable air conditioner outdoor unit converter circuit and control method |
| CN112187025A (en) * | 2020-09-30 | 2021-01-05 | 深圳市英威腾电动汽车驱动技术有限公司 | IGBT gate resistance regulating circuit, motor controller and electric automobile |
| CN112511074A (en) * | 2020-11-25 | 2021-03-16 | 郑州嘉晨电器有限公司 | Motor controller temperature control method and system |
-
2018
- 2018-08-24 CN CN201821378056.0U patent/CN208461684U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111817641A (en) * | 2020-06-01 | 2020-10-23 | 上海三菱电机·上菱空调机电器有限公司 | Inverter circuit of variable frequency air conditioner outdoor unit and driving control method of inverter circuit |
| CN111817555A (en) * | 2020-06-01 | 2020-10-23 | 上海三菱电机·上菱空调机电器有限公司 | Driving resistance adjustable air conditioner outdoor unit converter circuit and control method |
| CN112187025A (en) * | 2020-09-30 | 2021-01-05 | 深圳市英威腾电动汽车驱动技术有限公司 | IGBT gate resistance regulating circuit, motor controller and electric automobile |
| CN112187025B (en) * | 2020-09-30 | 2022-06-24 | 深圳市英威腾电动汽车驱动技术有限公司 | IGBT gate resistance regulating circuit, motor controller and electric automobile |
| CN112511074A (en) * | 2020-11-25 | 2021-03-16 | 郑州嘉晨电器有限公司 | Motor controller temperature control method and system |
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