CN203233377U - Bi-stable over-temperature protector - Google Patents
Bi-stable over-temperature protector Download PDFInfo
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- CN203233377U CN203233377U CN 201320195953 CN201320195953U CN203233377U CN 203233377 U CN203233377 U CN 203233377U CN 201320195953 CN201320195953 CN 201320195953 CN 201320195953 U CN201320195953 U CN 201320195953U CN 203233377 U CN203233377 U CN 203233377U
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- triode
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Abstract
The utility model discloses a bi-stable over-temperature protector which comprises a diode, a first triode, a second triode, a third triode, a resistor, an amplifier and a MOS field effect transistor (MOSFET). A positive electrode of the diode is a voltage input terminal and is connected with the drain electrode of the MOSFET; a negative electrode of the diode is connected with the emitting electrode of the first triode; a base electrode of the first triode is connected with a first signal input terminal; and a collector electrode of the first triode is connected with a collector electrode of the second triode, a collector electrode of the third triode, a signal input terminal of the amplifier and a grid electrode of the MOSFET. According to the bi-stable over-temperature protector disclosed by the utility model, positive feedback is introduced by taking advantage of the bi-stable avalanche type state transition to generate hysteresis, the transmission speed of two steady states is improved and the stability of an over-temperature protection circuit is enhanced by taking advantage of the inherent stability of a bi-stable circuit.
Description
Technical field
The utility model relates to a kind of protector, relates in particular to a kind of bistable state overheat protector device.
Background technology
Along with dwindling and the increase of power consumption of chip size, the problem of temperature rise of chip is more and more outstanding, and overheat protector is particularly important in circuit.For fear of the switch concussion that noise causes, thermal-shutdown circuit has the hysteresis function.And a transfer process is arranged between on off state, and if this process is long, just might produce indefinite on off state, obviously the requirement of this and sensitivity and operating rate is conflicting.Usually, hysteresis is to realize by introducing certain positive feedback, is badly in need of solving hysteresis and sensitivity and the conflicting problem of operating rate of thermal-shutdown circuit at present.
The utility model content
The purpose of this utility model just is to provide in order to address the above problem a kind of simple in structure, bistable state overheat protector device of having improved the conversion speed between two stable states.
In order to achieve the above object, the utility model has adopted following technical scheme:
A kind of bistable state overheat protector device; comprise diode; first triode; second triode; the 3rd triode; resistance; amplifier; metal-oxide-semiconductor; the just very voltage input end of described diode; the positive pole of described diode is connected with the drain electrode of described metal-oxide-semiconductor; the negative pole of described diode is connected with the emitter of described first triode; the base stage of described first triode is connected with first signal input part; the collector electrode of described first triode respectively with the collector electrode of described second triode; the collector electrode of described the 3rd triode; the signal input part of described amplifier is connected with the grid of described metal-oxide-semiconductor; the secondary signal input is connected with the base stage of described second triode and the base stage of described the 3rd triode respectively; the emitter of described second triode is connected back ground connection with first end of described resistance, the emitter of described the 3rd triode is connected with second end of described resistance and the source electrode of described metal-oxide-semiconductor respectively.
The beneficial effects of the utility model are:
A kind of bistable state overheat protector of the utility model device; thereby utilize bistable avalanche type state-transition to introduce positive feedback and produce hysteresis; simultaneously improve two conversion speeds between the stable state greatly, and can utilize the intrinsic stability of bistable circuit to improve the stability of thermal-shutdown circuit.
Description of drawings
Fig. 1 is the circuit diagram of a kind of bistable state overheat protector of the utility model device.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing:
As shown in Figure 1; a kind of bistable state overheat protector of the utility model device; comprise diode D; the first triode VT1; the second triode VT2; the 3rd triode VT3; resistance R; amplifier IC; metal-oxide-semiconductor M; the just very voltage input end of diode D; the positive pole of diode D is connected with the drain electrode of metal-oxide-semiconductor M; the negative pole of diode D is connected with the emitter of the first triode VT1; the base stage of the first triode VT1 is connected with first signal input part; the collector electrode of the first triode VT1 respectively with the collector electrode of the second triode VT2; the collector electrode of the 3rd triode VT3; the signal input part of amplifier IC is connected with the grid of metal-oxide-semiconductor M; the secondary signal input is connected with the base stage of the second triode VT2 and the base stage of the 3rd triode VT3 respectively; the emitter of the second triode VT2 is connected back ground connection with first end of resistance R, the emitter of the 3rd triode VT3 is connected with second end of resistance R and the source electrode of metal-oxide-semiconductor M respectively.
Use the operation principle of a kind of bistable state overheat protector of the utility model device as follows:
Diode D is temp .-sensitive diodes, and the relativeness of its electric current and reference current (the second triode VT2, the 3rd triode VT3 electric current sum) determines level to change, and the variation of level has determined the operating state of this circuit; Metal-oxide-semiconductor M and the second triode VT2 constitute bistable circuit, and (stable state I: the second triode VT2 is saturated, and metal-oxide-semiconductor M ends; The stable state II: the second triode VT2 ends, and metal-oxide-semiconductor M is saturated; Unstable state: the second triode VT2, the 3rd triode VT3 are operated in the amplification region, and metal-oxide-semiconductor M is operated in the saturation region).When circuit is in unstable state, owing to metal-oxide-semiconductor M, resistance R, the second triode VT2, the 3rd triode VT3 form regenerative feedback loop, play pendulum, accelerate the transformation to stable state.
Claims (1)
1. bistable state overheat protector device; it is characterized in that: comprise diode; first triode; second triode; the 3rd triode; resistance; amplifier; metal-oxide-semiconductor; the just very voltage input end of described diode; the positive pole of described diode is connected with the drain electrode of described metal-oxide-semiconductor; the negative pole of described diode is connected with the emitter of described first triode; the base stage of described first triode is connected with first signal input part; the collector electrode of described first triode respectively with the collector electrode of described second triode; the collector electrode of described the 3rd triode; the signal input part of described amplifier is connected with the grid of described metal-oxide-semiconductor; the secondary signal input is connected with the base stage of described second triode and the base stage of described the 3rd triode respectively; the emitter of described second triode is connected back ground connection with first end of described resistance, the emitter of described the 3rd triode is connected with second end of described resistance and the source electrode of described metal-oxide-semiconductor respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320195953 CN203233377U (en) | 2013-04-18 | 2013-04-18 | Bi-stable over-temperature protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320195953 CN203233377U (en) | 2013-04-18 | 2013-04-18 | Bi-stable over-temperature protector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203233377U true CN203233377U (en) | 2013-10-09 |
Family
ID=49289479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320195953 Expired - Fee Related CN203233377U (en) | 2013-04-18 | 2013-04-18 | Bi-stable over-temperature protector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203233377U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113014236A (en) * | 2021-03-08 | 2021-06-22 | 电子科技大学 | Hysteresis over-temperature protection circuit without comparator |
-
2013
- 2013-04-18 CN CN 201320195953 patent/CN203233377U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113014236A (en) * | 2021-03-08 | 2021-06-22 | 电子科技大学 | Hysteresis over-temperature protection circuit without comparator |
| CN113014236B (en) * | 2021-03-08 | 2022-05-17 | 电子科技大学 | Hysteresis over-temperature protection circuit without comparator |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131009 Termination date: 20140418 |