CN113014236B - Hysteresis over-temperature protection circuit without comparator - Google Patents

Hysteresis over-temperature protection circuit without comparator Download PDF

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CN113014236B
CN113014236B CN202110248942.1A CN202110248942A CN113014236B CN 113014236 B CN113014236 B CN 113014236B CN 202110248942 A CN202110248942 A CN 202110248942A CN 113014236 B CN113014236 B CN 113014236B
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周泽坤
王祖傲
艾雪
石跃
张波
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
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    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
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Abstract

A hysteresis over-temperature protection circuit without a comparator utilizes a positive temperature coefficient voltage generation module to generate a first control voltage which is in direct proportion to absolute temperature; the over-temperature protection core module controls the base voltage of the second PNP type triode according to the first control voltage, and further controls the collector current of the second PNP type triode to rise along with the rise of the temperature, so that the collector potential of the first NPN type triode is controlled, and the collector potential of the first NPN type triode is driven and enhanced to obtain an output signal of the hysteresis over-temperature protection circuit; in addition, the hysteresis module is arranged to enable all collector currents of the first PNP type triode to flow out through the first NMOS tube when the chip works normally, and enable all collector currents of the first PNP type triode to flow out through the fourth resistor, the fourth PNP type triode and the sixth resistor when the chip is in an over-temperature state, so that the hysteresis window is introduced. The invention saves the area of the chip, reduces the time delay of signal transmission and can prevent the service life of the device from being influenced by overhigh temperature of the chip.

Description

Hysteresis over-temperature protection circuit without comparator
Technical Field
The invention belongs to the technical field of basic electronic circuits, and relates to a comparator-free hysteresis over-temperature protection circuit.
Background
With the development of integrated circuit technology, the chip integration level is higher and higher, and the device density and the energy consumption density are higher and higher. The chip temperature is increased due to power consumption, and the chip cannot work normally due to overcurrent caused by PN junction thermal breakdown. Therefore, in an integrated circuit system, an over-temperature protection circuit is necessary to prevent the chip from permanent damage due to over-high operating temperature and to ensure the reliability and stability of the chip operation.
As shown in fig. 1, a conventional over-temperature protection circuit adopts a transistor Q1 with a negative temperature coefficient threshold to realize over-temperature comparison, and the working principle is as follows: the voltage of the positive input end of the comparator depends on the threshold voltage of a triode Q1, and the voltage of the negative input end of the comparator is a fixed value; the voltage of the positive input end of the comparator is reduced along with the rise of the temperature, when the temperature rises continuously, the voltage of the positive input end of the comparator is lower than that of the negative input end, the output of the comparator is turned over, and the generated output signal jumps, so that the output signal can be used as an over-temperature mark signal to control other modules in the chip.
However, the conventional over-temperature protection circuit has a comparator, so that the chip area is too large, and the signal transmission delay is increased. And because only one temperature detection value is set in the traditional over-temperature protection circuit, when the temperature exceeds a certain threshold value, a chip turn-off signal is output, and the traditional over-temperature protection circuit has certain hysteresis, and obviously, the hysteresis can cause overheating and burning of certain semiconductor components with higher temperature, and the service life of the components is seriously influenced.
Disclosure of Invention
Aiming at the problems that the traditional over-temperature protection circuit has a large chip area and increased transmission delay due to the comparator and devices are easy to burn out due to only one temperature detection value, the invention provides the over-temperature protection circuit with the hysteresis function without the comparator, which can trigger an over-temperature signal when the temperature of a chip is too high, close an internal module of the chip and start protection; and when the temperature is reduced to a normal allowable range, the chip is enabled, and the power-on operation is started again.
The technical scheme of the invention is as follows:
a hysteresis over-temperature protection circuit without a comparator comprises a positive temperature coefficient voltage generation module, an over-temperature protection core module and a hysteresis module;
the positive temperature coefficient voltage generating module is used for generating a first control voltage in direct proportion to absolute temperature;
the over-temperature protection core module comprises a fifth resistor, a sixth resistor, a seventh resistor, a first NPN type triode, a second PNP type triode and an output driving unit;
the base electrode of the second PNP type triode is connected with the first control voltage, the emitting electrode of the second PNP type triode is connected with the reference voltage, and the collecting electrode of the second PNP type triode is connected with the base electrode of the first NPN type triode and is grounded after passing through a series structure of a fifth resistor and a sixth resistor;
the collector of the first NPN type triode is connected with the input end of the output driving unit and is connected with power voltage after passing through the seventh resistor, and the emitter of the first NPN type triode is grounded;
the output end of the output driving unit is used as the output end of the hysteresis over-temperature protection circuit;
the hysteresis module comprises a first PNP type triode, a fourth resistor and a first NMOS (N-channel metal oxide semiconductor) tube, and the hysteresis module and the over-temperature protection core module share a sixth resistor;
the base electrode of the first PNP type triode is connected with the first control voltage, the emitting electrode of the first PNP type triode is connected with the reference voltage, and the collector electrode of the first PNP type triode is connected with the drain electrode of the first NMOS tube and is connected with the emitting electrode of the fourth PNP type triode after passing through the fourth resistor;
the grid electrode of the first NMOS tube is connected with the collector electrode of the first NPN type triode, and the source electrode of the first NMOS tube is grounded;
and the base electrode of the fourth PNP type triode is connected with the base electrode of the first NPN type triode, and the collector electrode of the fourth PNP type triode is connected with the series point of the fifth resistor and the sixth resistor.
Specifically, the positive temperature coefficient voltage generating module comprises a first resistor, a second resistor, a third resistor and a third PNP type triode, wherein the first resistor is used as a trimming resistor, and the resistance value of the first resistor is adjustable;
the first resistor and the second resistor are connected in series to form a series structure, one end of the series structure is connected with the reference voltage, and the other end of the series structure is connected with the base electrode of the first PNP type triode and the base electrode of the second PNP type triode and is connected with the emitting electrode of the third PNP type triode after passing through the third resistor; the base electrode and the collector electrode of the third PNP type triode are grounded; the voltage at the two ends of the series structure is the first control voltage which is in direct proportion to the absolute temperature.
Specifically, the output driving unit comprises a first inverter and a second inverter, wherein an input end of the first inverter is used as an input end of the output driving unit, and an output end of the first inverter is connected with an input end of the second inverter; the output end of the second inverter is used as the output end of the output driving unit.
The working principle of the invention is as follows:
the invention uses the positive temperature coefficient voltage generating module to generate a voltage which is in direct proportion to the absolute temperature and is called as a first control voltage, the base electrode of a second PNP type triode in the over-temperature protection core module is connected with the first control voltage, the first control voltage proportional to the absolute temperature can control the second PNP transistor to generate a current rising with the temperature (i.e. the collector current I1 of the second PNP transistor), I1 flows through the fifth resistor and the sixth resistor to generate a voltage rising with the temperature and is connected to the base of the first NPN transistor for controlling the first NPN transistor to turn on and off, therefore, the potential of the collector of the first NPN type triode is controlled, the collector signal of the first NPN type triode can be used as a standard for judging the over-temperature, and the collector signal of the first NPN type triode passes through the output driving unit to obtain an output signal OUT of the hysteresis over-temperature protection circuit. In addition, the hysteresis module introduced by the invention utilizes the collector signal of the first NPN type triode to connect with the gate of the first NMOS tube, and is used for controlling the on and off of the first NMOS tube, and further controlling the collector current I2 of the first PNP type triode to flow out through the first NMOS tube, or through the fourth resistor, the fourth PNP type triode, and the sixth resistor, so as to realize the temperature comparison of the hysteresis section.
The invention has the beneficial effects that:
the invention utilizes the positive temperature coefficient voltage generating module to generate a PTAT voltage which is a first control voltage in direct proportion to absolute temperature, can read out the change of the temperature according to the change of the first control voltage, and then converts the voltage signal of the first control voltage into a current signal (i.e. I1) and then into a voltage signal (i.e. V)A) Finally, a voltage signal (i.e. V) varying with temperature is utilizedA) The on and off of the first NPN type triode NPN1 are controlled, and the stability of the circuit is guaranteed.
The invention can be used in various products such as integrated circuit chips, switching power supplies and the like, so as to output effective over-temperature protection signals when the temperature of the product is overhigh and control the product to enter a temperature protection state; and when the temperature is reduced to a normal allowable range, an over-temperature unlocking signal is output to control the product to enter a normal working state.
Compared with the traditional structure, the invention does not adopt a comparator, greatly saves the area of a chip and reduces the delay of signal transmission; in addition, the hysteresis module is introduced to solve the problem that the device is easily burnt out due to hysteresis caused by only setting one temperature detection value in the traditional over-temperature protection circuit, the service life of the device is prevented from being influenced by overhigh temperature of the chip by setting the hysteresis comparison interval, and the reliability of the circuit is improved.
Drawings
The following description of various embodiments of the invention may be better understood with reference to the following drawings, which schematically illustrate major features of some embodiments of the invention. These figures and examples provide some embodiments of the invention in a non-limiting, non-exhaustive manner. For purposes of clarity, the same reference numbers will be used in different drawings to identify the same or similar elements or structures having the same function.
Fig. 1 is a schematic diagram of a conventional over-temperature protection circuit.
Fig. 2 is a specific architecture diagram of a comparator-less over-temperature protection circuit according to an embodiment of the present invention.
Fig. 3 is a diagram illustrating an operating state of the over-temperature protection circuit according to the embodiment when the chip normally operates.
Fig. 4 is a diagram illustrating an operating state of the over-temperature protection circuit according to the embodiment when the chip is over-temperature.
Fig. 5 is a schematic diagram of a turning point of a comparator-less over-temperature protection circuit according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a comparator-free hysteresis over-temperature protection circuit, which comprises a positive temperature coefficient voltage generation module, an over-temperature protection core module and a hysteresis module; the positive temperature coefficient voltage generating module is used for generating a first control voltage which is in direct proportion to absolute temperature; fig. 2 shows an implementation structure of the ptc voltage generating module, but the structure of the ptc voltage generating module in this embodiment is not limited to the present invention, and other structures capable of generating the first control voltage proportional to absolute temperature can be used in the present invention. As shown in fig. 2, the ptc voltage generating module in this embodiment includes a first resistor R1, a second resistor R2, a third resistor R3, and a third PNP-type triode PNP3, wherein the first resistor R1 is used as a trimming resistor, and the resistance thereof is adjustable; the first resistor R1 and the second resistor R2 are connected in series to form a series structure, one end of the series structure is connected with a reference voltage VREF, and the other end of the series structure is connected with the base electrode of the first PNP type triode PNP1 and the base electrode of the second PNP type triode PNP2 and is connected with the emitting electrode of the third PNP type triode PNP3 after passing through the third resistor R3; the base and collector of the third PNP type triode PNP3 are grounded; the voltage across the series arrangement is a first control voltage V1 proportional to absolute temperature.
In this embodiment, the voltage obtained by subtracting the voltage from the emitter of the third PNP transistor PNP3 to ground from the reference voltage VREF and dividing the voltage by the third resistor R3 is the magnitude of the voltage V1 at the two ends of the series structure formed by the series connection of the first resistor R1 and the resistor R2, that is, the magnitude of the voltage V1 is adjusted
Figure BDA0002965174060000041
VBE_PNP3The base-emitter voltage of the third PNP transistor PNP3 has a CTAT (inversely proportional to absolute temperature) characteristic, and the temperature coefficient of the PTAT voltage (i.e., the first control voltage V1) can be adjusted by setting the resistance ratio of the first resistor R1, the second resistor R2, and the third resistor R3.
As shown in fig. 2, the over-temperature protection core module includes a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first NPN transistor NPN1, a second PNP transistor PNP2, and an output driving unit; the base electrode of the second PNP type triode PNP2 is connected with the first control voltage, namely one end of the series structure is connected with the reference voltage VREF, and the other end of the series structure is connected with the base electrode of the second PNP type triode PNP 2; an emitter of the second PNP transistor PNP2 is connected to the reference voltage VREF, and a collector thereof is connected to a base of the first NPN transistor NPN1 and grounded through a series connection structure of the fifth resistor R5 and the sixth resistor R6; a collector of the first NPN triode NPN1 is connected to the input terminal of the output driving unit and is connected to the power supply voltage INTVCC through the seventh resistor R7, and an emitter thereof is grounded; and the output end of the output driving unit is used as the output end of the hysteresis over-temperature protection circuit.
The PTAT voltage (namely the first control voltage V1) generated by the positive temperature coefficient voltage generating module controls the base voltage of the second PNP type triode PNP2, namely the potential of a point D, and further can control the collector current I1 of the second PNP type triode PNP2 to rise along with the rise of temperature, so that the potential of the collector of the first NPN type triode NPN1 can be controlled, and the output driving unit is used for driving and enhancing the collector signal of the first NPN type triode to obtain the output signal OUT of the hysteresis over-temperature protection circuit. As shown in fig. 2, an implementation structure of the output driving unit is provided, which includes a first inverter INV1 and a second inverter INV2, wherein an input end of the first inverter INV1 is used as an input end of the output driving unit, and an output end of the first inverter INV1 is connected to an input end of the second inverter INV 2; an output end of the second inverter INV2 serves as an output end of the output driving unit.
The invention introduces the hysteresis module, so that the over-temperature protection circuit not only has a temperature detection value, as shown in fig. 2, the hysteresis module comprises a first PNP type triode PNP1, a fourth PNP type triode PNP4, a fourth resistor R4 and a first NMOS transistor NMOS1, and the hysteresis module and the over-temperature protection core module share a sixth resistor R6; the base electrode of the first PNP type triode PNP1 is connected with a first control voltage, the emitter electrode of the first PNP type triode PNP1 is connected with a reference voltage VREF, and the collector electrode of the first PNP type triode PNP1 is connected with the drain electrode of the first NMOS tube NMOS1 and is connected with the emitter electrode of the fourth PNP type triode PNP4 after passing through the fourth resistor R4; the grid electrode of the first NMOS transistor NMOS1 is connected with the collector electrode of a first NPN type triode NPN1, and the source electrode of the first NMOS transistor NMOS 3578 is grounded; the base of the fourth PNP transistor PNP4 is connected to the base of the first NPN transistor NPN1, and its collector is connected to the series point of the fifth resistor R5 and the sixth resistor R6.
The operation of the present invention will be described in detail with reference to the accompanying drawings.
The invention makes use of a voltage V having a PTAT (proportional to absolute temperature) characteristicA(i.e. the base voltage of the first NPN transistor NPN1) and the turn-on voltage V of the first NPN transistor NPN1 having a CTAT (inversely proportional to absolute temperature) characteristicBEThe comparison is performed to control the first NPN transistor NPN1 to turn on and off to obtain the over-temperature flag signal OUT. The PTAT voltage V generated in this example can be derived from FIG. 2AThe principle of (1).
First, according to the above analysis, the first control voltage V1 has PTAT characteristics, and its expression is:
Figure BDA0002965174060000051
wherein, VREFA voltage value of a reference voltage VREF provided for the outside, having a zero-temperature characteristic, VBE_PNP3For the base-emitter voltage of the third PNP transistor PNP3 to have a CTAT characteristic, the resistance ratio of the first resistor R1, the second resistor R2, and the third resistor R3 is set to adjust the temperature coefficient of the first control voltage V1.
Therefore, the current I1 flowing through the second PNP transistor PNP2 also has the characteristic of increasing with temperature, and the expression that the magnitude changes with the change of V1 is as follows:
Figure BDA0002965174060000052
wherein ISIs a reverse saturation current, VTIs a thermal voltage.
When the chip normally works, the potential of the point B (namely the first NPN type triode NPN1) and the output of the over-temperature protection circuitThe over-temperature flag signal OUT generated at the terminal is high as shown in fig. 3. At this time, the first NMOS transistor NMOS1 is turned on, and the collector current I2 of the first PNP transistor PNP1 flows out through the first NMOS transistor NMOS 1. Therefore, the voltage V at the point A can be obtainedAThe expression of (a) is:
VA-＝I1·(R5+R6)
in the over-temperature state of the chip, the potential at the point B and the over-temperature flag signal OUT generated at the output terminal of the over-temperature protection circuit are low, as shown in fig. 4. At this time, the NMOS1 of the first NMOS transistor is turned off, and the collector current I2 of the PNP1 of the first PNP transistor flows out through the path from the fourth resistor R4 to the fourth PNP transistor PNP4 to the sixth resistor R6, thereby introducing a hysteresis window into the circuit. Therefore, the voltage V at the point A can be obtainedAThe expression of (a) is:
VA+＝I1·(R5+R6)+I2·R6
in addition, the relationship between the turn-on voltage of the transistor NPN1 and the temperature T can be approximated as:
VBE3＝Y0-k0T
wherein Y is0、k0Expressing constant, and combining the above expressions to obtain upper and lower limit temperature value T of hysteresis window for temperature detection+And T-：
Figure BDA0002965174060000061
T can be set by adjusting the sizes of the fifth resistor R5 and the sixth resistor R6+And T-To determine the amount of hysteresis in the hysteresis window. Specifically, the specific working principle of the over-temperature protection circuit for realizing hysteresis is as follows:
when the temperature gradually changes from low to high, the first control voltage V1 increases, the current I1 flowing through the second PNP transistor PNP2 also increases, the potential at point a gradually increases, as shown in fig. 5, and when the temperature rises to the set over-temperature point T+When the over-temperature protection circuit is started, the first NPN type triode NPN1 is started to pull down the potential of the point B, and the over-temperature mark signal OUT generated at the output end of the over-temperature protection circuit is also turned down accordingly. In the process, the first NMOS tubeThe NMOS1 is turned on and the collector current I2 of the first PNP transistor PNP1 flows entirely through the first NMOS transistor NMOS 1.
When the temperature is gradually changed from high to low, the first control voltage V1 is reduced, the current I1 flowing through the second PNP type triode PNP2 is reduced, the potential of the point A is gradually reduced, and as shown in figure 5, when the temperature is reduced to the set over-temperature point T-When the first NPN type triode NPN1 turns off, the potential at point B is raised, and the over-temperature flag signal OUT generated at the output terminal of the over-temperature protection circuit is also raised accordingly. In the process, the NMOS1 is turned off, and the collector current I2 of the PNP transistor PNP1 flows out through the R4-PNP 4-R6.
In summary, the present invention provides a comparator-less over-temperature protection circuit by providing a PTAT voltage V proportional to temperatureAThe on-off of the first NPN type triode NPN1 is controlled, so that an over-temperature mark signal OUT is obtained, and the problem that a device is easy to burn OUT due to hysteresis caused by the fact that a traditional over-temperature protection circuit is only provided with one temperature detection value is solved by introducing a hysteresis module, and the service life of the device is prevented from being influenced by the overhigh temperature of a chip; the over-temperature protection circuit can be used in various products such as integrated circuit chips and switching power supplies, so that when the temperature of the product is too high, an over-temperature protection signal is output to control the product to enter a temperature protection state, and when the temperature of the product is reduced back to normal, an over-temperature unlocking signal is output to control the product to enter a normal working state.
Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.

Claims (3)

1. A hysteresis over-temperature protection circuit without a comparator is characterized by comprising a positive temperature coefficient voltage generation module, an over-temperature protection core module and a hysteresis module;
the positive temperature coefficient voltage generating module is used for generating a first control voltage in direct proportion to absolute temperature;
the over-temperature protection core module comprises a fifth resistor, a sixth resistor, a seventh resistor, a first NPN type triode, a second PNP type triode and an output driving unit;
the base electrode of the second PNP type triode is connected with the first control voltage, the emitting electrode of the second PNP type triode is connected with the reference voltage, and the collector electrode of the second PNP type triode is connected with the base electrode of the first NPN type triode and is grounded after passing through the series connection structure of the fifth resistor and the sixth resistor;
the collector of the first NPN type triode is connected with the input end of the output driving unit and is connected with power voltage after passing through the seventh resistor, and the emitter of the first NPN type triode is grounded;
the output end of the output driving unit is used as the output end of the hysteresis over-temperature protection circuit;
the hysteresis module comprises a first PNP type triode, a fourth resistor and a first NMOS (N-channel metal oxide semiconductor) tube, and the hysteresis module and the over-temperature protection core module share a sixth resistor;
the base electrode of the first PNP type triode is connected with the first control voltage, the emitting electrode of the first PNP type triode is connected with the reference voltage, and the collector electrode of the first PNP type triode is connected with the drain electrode of the first NMOS tube and is connected with the emitting electrode of the fourth PNP type triode after passing through the fourth resistor;
the grid electrode of the first NMOS tube is connected with the collector electrode of the first NPN type triode, and the source electrode of the first NMOS tube is grounded;
and the base electrode of the fourth PNP type triode is connected with the base electrode of the first NPN type triode, and the collector electrode of the fourth PNP type triode is connected with the series point of the fifth resistor and the sixth resistor.
2. The comparator-less hysteresis overheat protection circuit of claim 1, wherein the ptc voltage generating module comprises a first resistor, a second resistor, a third resistor and a third PNP transistor, wherein the first resistor is used as a trimming resistor and has an adjustable resistance;
the first resistor and the second resistor are connected in series to form a series structure, one end of the series structure is connected with the reference voltage, and the other end of the series structure is connected with a base electrode of the first PNP type triode and a base electrode of the second PNP type triode and is connected with an emitting electrode of the third PNP type triode through a third resistor; the base electrode and the collector electrode of the third PNP type triode are grounded; the voltage at the two ends of the series structure is the first control voltage which is in direct proportion to the absolute temperature.
3. The comparator-less hysteresis overheat protection circuit according to claim 1 or 2, wherein the output driving unit comprises a first inverter and a second inverter, an input terminal of the first inverter is used as an input terminal of the output driving unit, and an output terminal of the first inverter is connected to an input terminal of the second inverter; the output end of the second inverter is used as the output end of the output driving unit.
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