TWI596898B - Power module and control method thereof - Google Patents

Description

Power module and its control method

This case relates to a power module and a control method of the power module. Specifically, the present invention relates to a power module capable of adjusting the switching speed and a control method of the power module.

As a typical representative of the third generation of semiconductor materials, the wide bandgap semiconductor gallium nitride (GaN) has many excellent properties not found in traditional tantalum materials, and is an excellent semiconductor material for high frequency, high voltage, high temperature and high power applications. With advances in GaN technology, GaN power semiconductor devices have broad application prospects in the civil and military fields.

However, the existing power modules using GaN power semiconductor devices cannot adjust the switching speed of the power tube externally, which is very unfavorable for the electromagnetic compatibility characteristics of the terminal products, and also limits the performance of the GaN power devices from another angle. .

Therefore, how to improve the existing GaN power module and control the switching speed of the GaN power module is an important research topic in this field.

One aspect of the present disclosure is a power module. The power module includes: a GaN power switch including a 汲 terminal, a source terminal, and a gate terminal; and a driving circuit including an input end and an output end, wherein the output end of the driving circuit is configured to transmit An external resistor is electrically coupled to the gate of the GaN power switch, wherein a current of the gate of the GaN power switch is changed by adjusting a resistance value of the external resistor to control the GaN power switch The speed at which it is turned on or off.

In some embodiments of the present disclosure, the power module further includes: a first pin electrically coupled to the output end of the driving circuit; and a second pin electrically coupled to the nitriding The gate terminal of the gallium power switch; wherein the external resistor is electrically coupled between the first pin and the second pin.

In some embodiments of the present disclosure, the input end of the driving circuit is configured to receive an input signal and output a driving voltage to the first pin according to the input signal.

In some embodiments of the present disclosure, the input signal comprises a pulse width modulation signal or a frequency modulation signal.

Another aspect of the disclosure is a power module. The power module comprises: a GaN power switch comprising a 汲 extreme, a source terminal and a gate terminal; and a driving circuit comprising: an input terminal for receiving an input signal; and an output terminal, electrical The driving circuit is coupled to the gate terminal of the GaN power switch; wherein the driving circuit changes a charging current or a discharging current of the driving terminal to the gate terminal of the GaN power switch by adjusting a resistance value of an external resistor to control The speed at which the gallium nitride power switch is turned on or off.

In some embodiments of the present disclosure, the driving circuit includes a current control unit for controlling a speed at which the driving circuit turns on or off the GaN power switch, and the power module further includes: a first a pin electrically coupled to the first end of the current control unit; and a second pin electrically coupled to the second end of the current control unit; wherein the external resistor is electrically coupled And between the first pin and the second pin to adjust a magnitude of the charging current or the discharging current of the driving circuit to the gate terminal of the GaN power switch.

In some embodiments of the present disclosure, the input signal comprises a pulse width modulation signal or a frequency modulation signal.

In some embodiments of the present disclosure, the current control unit includes: a first driving voltage regulator electrically coupled to the first pin for converting a supply voltage to a resistance value according to the external resistor a control voltage electrically coupled to the first driving voltage regulator and the second pin for outputting a driving voltage according to the control voltage and the input signal; and a current regulator electrically coupled Connected to the driver for outputting the charging current or the discharging current to the gate terminal of the GaN power switch according to the driving voltage.

In some embodiments of the present disclosure, the current regulator includes: a pull-up switch, a first end of the pull-up switch is configured to receive the power supply voltage, and a second end of the pull-up switch is configured to output the a charging current, a control terminal of the pull-up switch is configured to receive the driving voltage; and a pull-down switch, the first end of the pull-down switch is electrically coupled to the second pin, and the second end of the pull-down switch The output current is output, and one of the pull-down switches is used to receive the driving voltage.

In some embodiments of the present disclosure, the current regulator is configured to adjust an on-state impedance of the pull-up switch and an on-state impedance of the pull-down switch according to the driving voltage.

In some embodiments of the present disclosure, when the driving voltage is a first level, the driving circuit supplies the charging current to the gate terminal of the GaN power switch, when the driving voltage is a second level. The driving circuit supplies the discharge current to the gate terminal of the gallium nitride power switch.

In some embodiments of the present disclosure, the first driving voltage regulator includes: a first transistor, comprising: a first terminal for receiving the supply voltage; and a second terminal for outputting the control voltage And a control terminal; and a comparison amplifier comprising: a first input electrically coupled to the first pin; a second input electrically coupled to the second of the first transistor And an output end electrically coupled to the control end of the first transistor.

In some embodiments of the present disclosure, the current control unit includes: a second driving voltage regulator electrically coupled to the first pin for converting a supply voltage to a resistance value of the external resistor a driver is electrically coupled to the second driving voltage regulator and the second pin for outputting a driving voltage according to the input signal; and a current regulator electrically coupled to the The driver and the second driving voltage regulator are configured to output the charging current or the discharging current to the gate terminal of the GaN power switch according to the driving voltage and the regulated power supply voltage.

In some embodiments of the present disclosure, the current regulator includes: a pull-up switch, a first end of the pull-up switch is configured to receive the regulated supply voltage, and a second end of the pull-up switch is configured to output a charging current, a control terminal of the pull-up switch is configured to receive the driving voltage; and a pull-down switch, wherein the first end of the pull-down switch is electrically coupled to the second pin, and the one of the pull-down switches is second The terminal is configured to output the discharge current, and one of the pull-down switches is configured to receive the driving voltage.

In some embodiments of the present disclosure, the current regulator is configured to adjust the charging current and the discharging current according to the adjusted power supply voltage.

In some embodiments of the present disclosure, the reference voltage regulator includes: a first transistor, comprising: a first end for receiving the supply voltage; and a second end for outputting the regulated supply voltage; And a control terminal, and a comparison amplifier, comprising: a first input end electrically coupled to the first pin; and a second input end electrically coupled to the second end of the first transistor And an output end electrically coupled to the control end of the first transistor.

In some embodiments of the present disclosure, when the external resistor is a first resistance value, the driving circuit provides a first charging current to the gate terminal of the GaN power switch, and when the external resistor is a first When the resistance value is two, the driving circuit provides a second charging current to the gate terminal of the GaN power switch, wherein when the first resistance value is greater than the second resistance value, the value of the first charging current is greater than the first a value of the charging current; when the external resistor is a third resistance value, the driving circuit provides a first discharging current to the gate terminal of the GaN power switch, and when the external resistor is a fourth resistance value The driving circuit provides a second discharge current to the gate terminal of the GaN power switch, wherein when the third resistance value is greater than the fourth resistance value, the value of the first discharge current is greater than the second discharge current value.

In some embodiments of the present disclosure, when the gate terminal of the GaN power switch receives the first charging current, the GaN power switch is turned on at a first conduction speed when the GaN power switch is When the gate terminal receives the second charging current, the GaN power switch is turned on at a second conduction speed, wherein when the value of the first charging current is greater than the value of the second charging current, the first conduction speed is greater than The second conduction speed.

In some embodiments of the present disclosure, when the gate terminal of the GaN power switch receives the first discharge current, the GaN power switch is turned off at a first off speed when the GaN power When the gate terminal of the switch receives the second discharge current, the GaN power switch is turned off at a second turn-off speed, wherein when the value of the first discharge current is greater than the value of the second discharge current, the first A turn-off speed is greater than the second turn-off speed.

Yet another aspect of the present disclosure is a method of controlling a power module. The control method comprises: adjusting a resistance value of an external resistor; and adjusting, by a current control unit in a driving circuit, a charging current or a discharging current of the driving terminal to a gate terminal of a GaN power switch according to a resistance value of the external resistor And controlling the turn-on or turn-off speed of the GaN power switch by adjusting the charging current or the discharging current, wherein when the charging current or the discharging current increases, the conduction speed of the GaN power switch is turned off or off The breaking speed is increased, and when the discharging current or the discharging current is decreased, the turning-on or turning-off speed of the GaN power switch is slowed down.

In some embodiments of the present disclosure, the step of adjusting, by the current control unit, the charging current or the discharging current of the driving circuit to the gate terminal of the GaN power switch comprises: transmitting a first driving voltage regulator Adjusting a control voltage according to the resistance value of the external resistor; outputting a driving voltage according to the control voltage and an input signal through a driver; and outputting the charging current or the discharging current to the nitriding according to the driving voltage through a current regulator The gate terminal of the gallium power switch.

In some embodiments of the present disclosure, the step of adjusting, by the current control unit, the charging current or the discharging current of the driving circuit to the gate terminal of the GaN power switch comprises: driving a regulator through a second voltage Converting a power supply voltage into a regulated power supply voltage according to the resistance value of the external resistor; outputting a driving voltage according to an input signal through a driver; and outputting the charging current according to the driving voltage and the adjusting power supply voltage through a current regulator or The discharge current is to the gate terminal of the gallium nitride power switch.

In summary, the power module in the present disclosure can adjust the value of the charging current or the discharging current by adjusting the resistance value of the external resistor, thereby adjusting the conduction speed and the shutdown speed of the GaN power switch in the power module. According to the improvement of the electromagnetic compatibility characteristics of the terminal products, the performance of the GaN power device is improved.

The following is a detailed description of the embodiments in order to provide a better understanding of the present invention, but the embodiments are not intended to limit the scope of the disclosure, and the description of structural operation is not limited. The order of execution, any device that is recombined by components, produces equal devices, and is covered by this disclosure. In addition, according to industry standards and practices, the drawings are for illustrative purposes only and are not drawn to the original dimensions. In fact, the dimensions of the various features may be arbitrarily increased or decreased for ease of illustration. In the following description, the same elements will be denoted by the same reference numerals for explanation.

The terms used in the entire specification and the scope of the patent application, unless otherwise specified, generally have the ordinary meaning of each term used in the field, the content disclosed herein, and the particular content. Certain terms used to describe the disclosure are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in the description of the disclosure.

In addition, the terms "including", "including", "having", "including", etc., as used herein, are all terms of openness, meaning "including but not limited to". In addition, "and/or" as used herein includes any one or more of the associated listed items and all combinations thereof.

As used herein, when an element is referred to as "connected" or "coupled", it may mean "electrically connected" or "electrically coupled". "Connected" or "coupled" can also be used to indicate that two or more components operate or interact with each other. In addition, although the terms "first", "second", and the like are used herein to describe different elements, the terms are used to distinguish between elements or operations described in the same technical terms. The use of the term is not intended to be a limitation or a

Please refer to Figure 1. FIG. 1 is a schematic diagram of a power module 100 according to some embodiments of the present invention. As shown in FIG. 1 , the power module 100 includes a gallium nitride power switch 120 and a drive circuit 140 . The GaN power switch 120 includes a 汲 terminal D, a source terminal S, and a gate terminal G. In some embodiments, the source terminal S of the GaN power switch 120 is electrically coupled to the reference voltage VSS. The drive circuit 140 includes an input and an output. The output end of the driving circuit 140 is electrically coupled to the gate terminal G of the gallium nitride power switch 120 through the external resistor Rd. In some embodiments, the power module 100 changes the current of the gate terminal G of the GaN power switch 120 by adjusting the resistance value of the external resistor Rd to control the speed at which the GaN power switch 120 is turned on or off.

As shown in FIG. 1, in some embodiments of the present invention, the power module 100 includes a pin PIN1 and a pin PIN2. The pin PIN1 is electrically coupled to the output of the driving circuit 140. The pin PIN2 is electrically coupled to the gate terminal G of the GaN power switch 120. Structurally, the external resistor Rd is electrically coupled between the pin PIN1 and the pin PIN2.

In some embodiments of the present invention, the input terminal of the driving circuit 140 is configured to receive the input signal P and output the driving voltage VD to the pin PIN1 according to the input signal P. For example, in some embodiments, the input signal P includes a Pluse Width Modulation (PWM). In other partial embodiments, the input signal P includes a frequency modulation signal. Specifically, the drive circuit 140 receives the supply voltage VDD and the reference voltage VSS. Thereby, the driving circuit 140 can output driving voltages VD of different levels according to different input signals P, for example, pulse width modulation or frequency modulation.

In this way, by adjusting the resistance value of the external resistor Rd, the current of the gate terminal G of the GaN power switch 120 can be adjusted correspondingly to control the speed of turning on or off the GaN power switch 120. In this embodiment, when the driving circuit 140 controls the GaN power switch 120 to be turned on, the resistance value of the external resistor Rd is increased to slow the conduction speed of the GaN power switch; and the resistance value of the external resistor Rd is adjusted to The conduction speed of the GaN power switch is made faster. When the driving circuit 140 controls the GaN power switch 120 to be turned off, the resistance value of the external resistor Rd is increased to slow down the turn-off speed of the GaN power switch; the resistance value of the external resistor Rd is adjusted to make the gallium nitride The power switch's turn-off speed becomes faster. In other embodiments, when the driving circuit 140 controls the GaN power switch 120 to be turned on, the resistance value of the external resistor Rd is increased to make the conduction speed of the GaN power switch faster; and the resistance value of the external resistor Rd is adjusted to The conduction speed of the GaN power switch is slowed down. When the driving circuit 140 controls the GaN power switch 120 to be turned off, the resistance value of the external resistor Rd is increased to make the turn-off speed of the GaN power switch faster; the resistance value of the external resistor Rd is adjusted to make the GaN The power switch's turn-off speed is slower.

Please refer to Figure 2. FIG. 2 is a schematic diagram of a power module 200 according to another embodiment of the present invention. As shown in FIG. 2, in some embodiments of the present invention, the power module 200 includes a gallium nitride power switch 220 and a driving circuit 240. The GaN power switch 220 includes a 汲 terminal D, a source terminal S, and a gate terminal G. In some embodiments, the source terminal S of the GaN power switch 220 is electrically coupled to the reference voltage VSS. The drive circuit 240 includes an input and an output. Specifically, the input of the driving circuit 240 is for receiving the input signal P. Similar to the embodiment shown in Figure 1, in some embodiments, the input signal P comprises a pulse width modulated signal (PWM). In other partial embodiments, the input signal P includes a frequency modulation signal. The output of the driving circuit 240 is electrically coupled to the gate terminal G of the GaN power switch 220.

In some embodiments, the driver circuit 240 includes a current control unit for controlling the speed at which the driver circuit 240 turns the GaN power switch 220 on or off. Specifically, the driving circuit 240 adjusts the charging current or the discharging current of the driving terminal 240 to the gate terminal G of the GaN power switch 220 through the resistance value of the external resistor Rd to control the speed of turning on or off the GaN power switch 240. .

As shown in FIG. 2, in some embodiments of the present invention, the power module 200 also includes a pin PIN1 and a pin PIN2. The pin PIN1 and the pin PIN2 are electrically coupled to the driving circuit 240, respectively. Drive circuit 240 includes a current control unit. Specifically, the pin PIN1 is electrically coupled to the first end of the current control unit. The pin PIN2 is electrically coupled to the second end of the current control unit. In some embodiments, the pin PIN2 is electrically coupled to the reference voltage VSS. Structurally, the external resistor Rd is electrically coupled between the pin PIN1 and the pin PIN2 to adjust the magnitude of the charging current or the discharging current of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220.

Please refer to Figure 3 together. FIG. 3 is a flow chart of a control method 300 of the power module 200 according to some embodiments of the present disclosure. For convenience and clarity of description, the following control method 300 is described in conjunction with the power module 200 shown in FIG. 2, but it is not limited thereto, and any person skilled in the art can avoid the spirit and scope of the present invention. When it can be used for various changes and retouching. As shown in FIG. 3, the control method 300 includes steps S310, S320, and S330.

First, in step S310, the resistance value of the external resistor Rd is adjusted. Next, in step S320, the current control unit in the drive circuit 240 adjusts the charging current or the discharge current of the driving circuit 240 to the gate terminal G of the gallium nitride power switch 220 according to the resistance value of the external resistor Rd. Next, in step S330, the speed at which the gallium nitride power switch 220 is turned on or off is controlled by adjusting the charging current or the discharging current. Specifically, when the charging current or the discharging current increases, the on-speed or the off-speed of the gallium nitride power switch 220 is increased, and when the discharge current or the discharge current is decreased, the on or off speed of the gallium nitride power switch 220 is increased. Slow down.

In the following paragraphs, a specific circuit and operation method for controlling the speed at which the current control unit in the drive circuit 240 controls the turn-on or turn-off of the GaN power switch 220 by the drive circuit 240 will be described. Please refer to Figure 4. FIG. 4 is a detailed circuit diagram of the driving circuit 240 according to some embodiments of the present invention.

As shown in FIG. 4, in some embodiments of the present invention, the current control unit in the drive circuit 240 includes a first drive voltage regulator 242, a driver 244, and a current regulator 246. Structurally, the first driving voltage regulator 242 is electrically coupled to the pin PIN1 for converting the supply voltage VDD into the control voltage Vdrv according to the resistance value of the external resistor Rd. The driver 244 is electrically coupled to the first driving voltage regulator 242 and the pin PIN2 for outputting the driving voltage Vg according to the control voltage Vdrv and the input signal P. The current regulator 246 is electrically coupled to the driver 244 for outputting the charging current I1 or the discharging current I2 to the gate terminal G of the gallium nitride power switch 220 according to the driving voltage Vg.

In particular, in some embodiments of the invention, current regulator 246 includes pull up switch S1 and pull down switch S2. The first end of the pull-up switch S1 is for receiving the power supply voltage VDD, and the second end of the pull-up switch S1 is for outputting the charging current I1. The control terminal of the pull-up switch S1 is for receiving the driving voltage Vg. The first end of the pull-down switch S2 is electrically coupled to the pin PIN2 for receiving the reference voltage VSS. The second end of the pull-down switch S2 is for outputting the discharge current I2, and the control end of the pull-down switch S2 is for receiving the driving voltage Vg. Thereby, when the driving voltage Vg is at a first level, the pull-up switch S1 is turned on, the pull-down switch S2 is turned off, and the driving circuit 240 supplies the charging current I1 to the GaN power switch 220. In contrast, when the driving voltage Vg is at the second level, the pull-up switch S1 is turned off, the pull-down switch S2 is turned on, and the driving circuit 240 supplies the discharging current I2 to the gallium nitride power switch 220.

In this way, the current regulator 246 can adjust the on-state impedance of the pull-up switch S1 and the on-state impedance of the pull-down switch S2 according to the driving voltage Vg. When the resistance value of the external resistor Rd is increased, the level of the control voltage Vdrv is also higher by the first driving voltage regulator 242. Therefore, the level of the driving voltage Vg is also high. The on-state impedance of the pull-up switch S1 and the pull-down switch S2 is lowered, thereby causing the driving circuit 240 to increase the charging current I1 or the discharging current I2 of the gate terminal G of the gallium nitride power switch 220, and the switching speed of the gallium nitride power switch 220. accelerate. on the other hand. When the resistance value of the external resistor Rd is lowered, the level of the control voltage Vdrv is also lowered by the first driving voltage regulator 242. Therefore, the level of the driving voltage Vg is also low. The on-state impedance of the pull-up switch S1 and the pull-down switch S2 is increased, thereby causing the driving circuit 240 to reduce the charging current I1 or the discharging current I2 of the gate terminal G of the gallium nitride power switch 220, and the switching speed of the gallium nitride power switch 220. Slow down.

In the following paragraphs, the specific circuit and operation method in the first driving voltage regulator 242 will be illustrated. Please refer to Figure 5. FIG. 5 is a detailed circuit diagram of the first driving voltage regulator 242 according to some embodiments of the present invention.

As shown in FIG. 5, in some embodiments of the present invention, the first driving voltage regulator 242 includes a first transistor T1 and a comparison amplifier OP1. Structurally, the first transistor T1 includes a first end, a second end, and a control end. The first end of the first transistor T1 is for receiving the supply voltage VDD. The second end of the first transistor T1 is used to output a control voltage Vdrv. The comparison amplifier OP1 includes a first input terminal, a second input terminal, and an output terminal. The first input of the comparison amplifier OP1 is electrically coupled to the pin PIN1. The second input end of the comparison amplifier OP1 is electrically coupled to the second end of the first transistor T1. As shown in FIG. 5, in some embodiments, the second input of the comparison amplifier OP1 is electrically coupled to the second end of the first transistor T1 through a bandgap reference circuit BGR. The differential reference voltage circuit is controlled in accordance with the enable signal EN received by the first drive voltage regulator 242. The output of the comparison amplifier OP1 is electrically coupled to the control terminal of the first transistor T1. The external resistor R1 is electrically coupled between the first input end of the comparison amplifier OP1 and the second end of the first transistor T1. The external resistor Rd and the capacitor C1 are electrically coupled between the first input terminal of the comparison amplifier OP1 and the reference voltage VSS, respectively. The capacitor Cout is electrically coupled between the second end of the first transistor T1 and the reference voltage VSS.

As a result, when the resistance value of the external resistor Rd increases, the control voltage output by the first driving voltage regulator 242 is passed through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the first driving voltage regulator 242. The level of Vdrv has also increased. In contrast, when the resistance value of the external resistor Rd decreases, the control voltage Vdrv outputted by the first driving voltage regulator 242 is passed through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the first driving voltage regulator 242. The level is also reduced.

Please refer to Figure 6 together. FIG. 6 is a flow chart of a control method 300 of the power module 200 according to some embodiments of the present disclosure. For the sake of convenience and clarity, the following control method 300 is described in conjunction with the driving circuit 240 shown in FIG. 4, but it is not limited thereto, and any person skilled in the art can avoid the spirit and scope of the present invention. When you can make a variety of changes and retouching. As shown in FIG. 6, in some embodiments, step S320 of the control method 300 further includes step S322a, step S324a, and step S326a.

First, in step S322a, the control voltage Vdrv is adjusted by the first driving voltage regulator 242 in accordance with the resistance value of the external resistor Rd. Next, in step S324a, the transmission driver 244 outputs the driving voltage Vg based on the control voltage Vdrv and the input signal P. Next, in step S326a, the permeation current regulator 246 outputs the charging current I1 or the discharging current I2 to the gate terminal G of the gallium nitride power switch 220 in accordance with the driving voltage Vg.

Those skilled in the art can directly understand how the control method 300 described in FIG. 6 is based on the power module 200 shown in FIG. 2 and the driving circuit 240 shown in FIG. 4 to perform the operations and functions. Therefore, it is not described here.

Please refer to Figure 7. FIG. 7 is a schematic diagram showing a detailed circuit of the driving circuit 240 according to another embodiment of the present invention.

As shown in FIG. 7, in some embodiments of the present invention, the current control unit in the drive circuit 240 includes a second drive voltage regulator 243, a driver 245, and a current regulator 247. Structurally, the second driving voltage regulator 243 is electrically coupled to the pin PIN1 for converting the supply voltage VDD to the regulated supply voltage Vtp according to the resistance value of the external resistor Rd. The driver 245 is electrically coupled to the second driving voltage regulator 243 and the pin PIN2 for outputting the driving voltage Vg according to the input signal P. The current regulator 247 is electrically coupled to the driver 245 and the second driving voltage regulator 243 for outputting the charging current I1 or the discharging current I2 to the gate terminal G of the gallium nitride power switch 220 according to the driving voltage Vg and the regulated power supply voltage Vtp. .

Similar to the driving circuit 240 shown in FIG. 4, in some embodiments of the present invention, the current regulator 247 may also include a pull-up switch S1 and a pull-down switch S2. The first end of the pull-up switch S1 is for receiving the regulated supply voltage Vtp, and the second end of the pull-up switch S1 is for outputting the charging current I1. The control terminal of the pull-up switch S1 is for receiving the driving voltage Vg. The first end of the pull-down switch S2 is electrically coupled to the pin PIN2 for receiving the reference voltage VSS. The second end of the pull-down switch S2 is for outputting the discharge current I2, and the control end of the pull-down switch S2 is for receiving the driving voltage Vg. Thereby, when the driving voltage Vg is at a first level, the pull-up switch S1 is turned on, the pull-down switch S2 is turned off, and the driving circuit 240 supplies the charging current I1 to the gate terminal G of the gallium nitride power switch 220. In contrast, when the driving voltage Vg is at the second level, the pull-up switch S1 is turned off, the pull-down switch S2 is turned on, and the driving circuit 240 supplies the discharging current I2 to the gate terminal G of the GaN power switch 220.

In this way, the current regulator 247 can adjust the charging current I1 or the discharging current I2 outputted by the current regulator 247 according to the regulated power supply voltage Vtp. When the resistance value of the external resistor Rd is increased, the level of the supply voltage Vtp is also adjusted by the second driving voltage regulator 243, and the charging current I1 of the driving terminal 240 to the gate terminal G of the GaN power switch 220 is further increased. Or the discharge current I2 increases, and the switching speed of the GaN power switch 220 is increased. on the other hand. When the resistance value of the external resistor Rd decreases, the level of the supply voltage Vtp is also lowered by the second driving voltage regulator 243, so that the driving circuit 240 charges the charging current I1 of the gate terminal G of the GaN power switch 220. Or the discharge current I2 is decreased, and the switching speed of the GaN power switch 220 is slowed down.

In the following paragraphs, specific circuits and operation methods in the second driving voltage regulator 243 will be described with reference to the drawings. Please refer to Figure 8. FIG. 8 is a detailed circuit diagram of the second driving voltage regulator 243 according to some embodiments of the present invention.

As shown in FIG. 8, in some embodiments of the present invention, the second driving voltage regulator 243 includes a first transistor T1 and a comparison amplifier OP1. Structurally, the first transistor T1 includes a first end, a second end, and a control end. The first end of the first transistor T1 is for receiving the supply voltage VDD. The second end of the first transistor T1 is used to output the regulated supply voltage Vtp. The comparison amplifier OP1 includes a first input terminal, a second input terminal, and an output terminal. The first input of the comparison amplifier OP1 is electrically coupled to the pin PIN1. The second input end of the comparison amplifier OP1 is electrically coupled to the second end of the first transistor T1. As shown in FIG. 8 , in some embodiments, the second input of the comparison amplifier OP1 is electrically coupled to the second end of the first transistor T1 through a bandgap reference circuit BGR. The differential reference voltage circuit is controlled in accordance with the enable signal EN received by the second drive voltage regulator 243. The output of the comparison amplifier OP1 is electrically coupled to the control terminal of the first transistor T1. The external resistor R1 is electrically coupled between the first input end of the comparison amplifier OP1 and the second end of the first transistor T1. The external resistor Rd and the capacitor C1 are electrically coupled between the first input terminal of the comparison amplifier OP1 and the reference voltage VSS, respectively. The capacitor Cout is electrically coupled between the second end of the first transistor T1 and the reference voltage VSS.

In this way, when the resistance value of the external resistor Rd is increased, the feedback circuit of the output voltage of the second driving voltage regulator 243 is outputted through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the second driving voltage regulator 243. The level of the voltage Vtp also increases. In contrast, when the resistance value of the external resistor Rd decreases, the feedback voltage generated by the second driving voltage regulator 243 is outputted through the feedback circuit formed by the first transistor T1 and the comparison amplifier OP1 in the second driving voltage regulator 243. The level of Vtp is also reduced.

Please refer to Figure 9 together. FIG. 9 is a flow chart of a control method 300 of the power module 200 according to other embodiments of the present disclosure. For the sake of convenience and clarity, the following control method 300 is described in conjunction with the driving circuit 240 shown in FIG. 7, but it is not limited thereto, and any person skilled in the art can avoid the spirit and scope of the present invention. When you can make a variety of changes and retouching. As shown in FIG. 9, in some embodiments, step S320 of the control method 300 further includes step S322b, step S324b, and step S326b.

First, in step S322b, the supply voltage VDD is converted to the regulated supply voltage Vtp by the second voltage regulator 243 according to the resistance value of the external resistor Rd. Next, in step S324b, the transmission driver 245 outputs the driving voltage Vg based on the input signal P. Next, in step S326b, the permeation current regulator 247 outputs the charging current I1 or the discharging current I2 to the gate terminal G of the gallium nitride power switch 220 in accordance with the driving voltage Vg and the regulated supply voltage Vtp.

Those skilled in the art can directly understand how the control method 300 described in FIG. 9 is based on the power module 200 shown in FIG. 2 and the driving circuit 240 shown in FIG. 7 to perform the operations and functions. Therefore, it is not described here.

As a result, when the resistance value of the external resistor Rd is increased by the driving circuit 240 shown in each of the above embodiments, the driving circuit 240 increases the charging current I1 or the discharging current I2 of the gate terminal G of the GaN power switch 220. The switching speed of the large, GaN power switch 220 is increased. on the other hand. When the resistance value of the external resistor Rd decreases, the driving circuit 240 decreases the charging current I1 or the discharging current I2 of the gate terminal G of the gallium nitride power switch 220, and the switching speed of the gallium nitride power switch 220 is slowed down.

In other words, when the external resistor Rd is the first resistance value, the driving circuit 240 provides the first charging current I1 to the gate terminal G of the gallium nitride power switch 220, and when the external resistor Rd is the second resistance value, the driving circuit 240 applies the nitrogen to the circuit. The gate terminal G of the gallium power switch 220 provides a second charging current I1. When the first resistance value is greater than the second resistance value, the value of the first charging current I1 is greater than the value of the second charging current I1.

Similarly, when the external resistor Rd is the third resistance value, the driving circuit 240 provides the first discharging current I2 to the gate terminal G of the gallium nitride power switch 220, and when the external resistor Rd is the fourth resistance value, the driving circuit 240 pairs The gate terminal G of the gallium nitride power switch 220 provides a second discharge current I2. When the third resistor value is greater than the fourth resistor value, the value of the first discharge current I2 is greater than the value of the second discharge current I2.

As such, in some embodiments of the present invention, when the gate terminal G of the GaN power switch 220 receives the first charging current I1, the GaN power switch 220 is turned on at the first conduction speed, when the GaN power switch When the gate terminal G of 220 receives the second charging current I1, the gallium nitride power switch 220 is turned on at the second conduction speed. When the value of the first charging current I1 is greater than the value of the second charging current I1, the first conduction speed is greater than the second conduction speed.

Similarly, in some embodiments of the present invention, when the gate terminal G of the gallium nitride power switch 220 receives the first discharge current I2, the gallium nitride power switch 220 is turned off at the first off-speed, when the GaN power When the gate terminal G of the switch 220 receives the second discharge current I2, the GaN power switch 220 is turned off at the second off speed. When the value of the first discharge current I2 is greater than the value of the second discharge current I2, the first off speed is greater than the second off speed.

In summary, the power modules 100 and 200 in the embodiments of the present disclosure can adjust the values of the charging current I1 or the discharging current I2 by adjusting the resistance value of the external resistor Rd, thereby adjusting the power modules 100 and 200. The turn-on speed and turn-off speed of the GaN power switches 120 and 220, and improve the electromagnetic compatibility characteristics of the terminal products, thereby improving the performance of the GaN power device.

While the methods disclosed are shown and described herein as a series of steps or events, it should be understood that the order of the steps or events are not to be construed as limiting. For example, some of the steps may occur in a different order and/or concurrently with other steps or events other than those illustrated or/or described herein. In addition, not all of the steps shown herein may be required to implement one or more aspects or embodiments described herein. Furthermore, one or more steps herein may also be performed in one or more separate steps and/or stages.

It should be noted that the features and circuits in the various figures, embodiments, and embodiments of the present disclosure may be combined with each other without conflict. The circuit illustrated in the drawings is for illustrative purposes only, and is simplified for simplicity and ease of understanding and is not intended to limit the present invention. In addition, the GaN power switches 120, 220, the pull-up switch S1, the pull-down switch S2, the first transistor T1, the comparison amplifier OP1, and the like, which are exemplified in the above embodiments, can be implemented in various different ways. For example, the pull-up switch S1, the pull-down switch S2, the first transistor T1, and the like can be respectively composed of a Bipolar Junction Transistor (BJT), a metal oxide semiconductor field effect transistor (Metal-Oxide- Semiconductor Field-Effect Transistor (MOSFET) or other suitable semiconductor components.

The present disclosure has been disclosed in the above embodiments, and is not intended to limit the disclosure, and the present disclosure may be variously modified and retouched without departing from the spirit and scope of the present disclosure. The scope of protection of the content is subject to the definition of the scope of the patent application.

100, 200‧‧‧ power modules

120, 220‧‧‧ GaN power switch

140, 240‧‧‧ drive circuit

242, 243‧‧‧ drive voltage regulator

244, 245‧‧‧ drive

246, 247‧‧‧ Current Regulator

300‧‧‧Control method

S310~S330‧‧‧Steps

S322a~S326a, S322b~S326b‧‧‧ steps

S‧‧‧ source extreme

D‧‧‧汲 Extreme

G‧‧‧ gate extreme

PIN1, PIN2‧‧‧ pin

Rd‧‧‧ external resistor

BGR‧‧‧Differential reference voltage circuit

S1, S2‧‧‧ switch

T1‧‧‧O crystal

C1, Cout‧‧‧ capacitor

OP1‧‧‧Comparative amplifier

VSS‧‧‧reference voltage

VDD‧‧‧ supply voltage

VD‧‧‧ drive voltage

Vg‧‧‧ drive voltage

Vdrv‧‧‧ control voltage

Vtp‧‧‧ supply voltage

I1, I2‧‧‧ current

PWM‧‧‧ input signal

EN‧‧‧Enable signal

FIG. 1 is a schematic diagram of a power module according to some embodiments of the present invention. FIG. 2 is a schematic diagram of a power module according to another embodiment of the present invention. FIG. 3 is a flow chart of a method for controlling a power module according to some embodiments of the present disclosure. 4 is a schematic diagram showing a detailed circuit of a driving circuit according to some embodiments of the present invention. FIG. 5 is a detailed circuit diagram of a first driving voltage regulator according to some embodiments of the present invention. FIG. 6 is a flow chart of a method for controlling a power module according to some embodiments of the present disclosure. FIG. 7 is a schematic diagram showing a detailed circuit of a driving circuit according to another embodiment of the present invention. FIG. 8 is a detailed circuit diagram of a second driving voltage regulator according to some embodiments of the present invention. FIG. 9 is a flow chart of a method for controlling a power module according to other embodiments of the present disclosure.

300‧‧‧Control method

S310~S330‧‧‧Steps

Claims (22)

A power module includes: a GaN power switch including a 汲 terminal, a source terminal, and a gate terminal; and a driving circuit including an input terminal and an output terminal, wherein the output terminal of the driving circuit is used The gate is electrically coupled to the gate of the GaN power switch through an external resistor, wherein a current of the gate of the GaN power switch is changed by adjusting a resistance of the external resistor to control the GaN The speed at which the power switch is turned on or off. The power module of claim 1, further comprising: a first pin electrically coupled to the output of the driving circuit; and a second pin electrically coupled to the GaN power The gate of the switch; wherein the external resistor is electrically coupled between the first pin and the second pin. The power module of claim 2, wherein the input end of the driving circuit is configured to receive an input signal and output a driving voltage to the first pin according to the input signal. The power module of claim 3, wherein the input signal comprises a pulse width modulation signal or a frequency modulation signal. A power module comprising: a GaN power switch comprising a 汲 extreme, a source terminal, and a gate And a driving circuit comprising: an input terminal for receiving an input signal; and an output terminal electrically coupled to the gate terminal of the GaN power switch; wherein the driving circuit adjusts an external resistor The resistance value changes a charging current or a discharging current of the driving circuit to the gate terminal of the GaN power switch to control the speed at which the GaN power switch is turned on or off. The power module of claim 5, wherein the driving circuit comprises a current control unit for controlling a speed at which the driving circuit turns on or off the GaN power switch, the power module further comprising: a first pin electrically coupled to the first end of the current control unit; and a second pin electrically coupled to the second end of the current control unit; wherein the external resistor is used for electrical And being coupled between the first pin and the second pin to adjust a magnitude of the charging current or the discharging current of the driving circuit to the gate terminal of the GaN power switch. The power module of claim 5, wherein the input signal comprises a pulse width modulation signal or a frequency modulation signal. The power module of claim 6, wherein the current control unit comprises: a first driving voltage regulator electrically coupled to the first pin for supplying a supply voltage according to a resistance value of the external resistor Converted to a control voltage; a driver is electrically coupled to the first driving voltage regulator and the second pin for outputting a driving voltage according to the control voltage; and a current regulator electrically coupled to the driver And outputting the charging current or the discharging current to the gate terminal of the GaN power switch according to the driving voltage. The power module of claim 8, wherein the current regulator comprises: a pull-up switch, a first end of the pull-up switch is configured to receive the power supply voltage, and a second end of the pull-up switch is used Outputting the charging current, one of the pull-up switches is configured to receive the driving voltage; and a pull-down switch, the first end of the pull-down switch is electrically coupled to the second pin, and the one of the pull-down switches The two ends are used to output the discharge current, and one of the pull-down switches is used to receive the driving voltage. The power module of claim 9, wherein the current regulator is configured to adjust an on-state impedance of the pull-up switch and an on-state impedance of the pull-down switch according to the driving voltage. The power module of claim 8, wherein the driving circuit supplies the charging current to the GaN power switch when the driving voltage is a first level, and when the driving voltage is a second level, A drive circuit provides the discharge current to the gallium nitride power switch. The power module of claim 8, wherein the first driving voltage regulator comprises: a first transistor, comprising: a first end for receiving the supply voltage; and a second end for outputting the a control voltage; and a control terminal; and a comparison amplifier, comprising: a first input terminal electrically coupled to the first pin; and a second input terminal electrically coupled to the first transistor a second end; and an output end electrically coupled to the control end of the first transistor. The power module of claim 6, wherein the current control unit comprises: a second driving voltage regulator electrically coupled to the first pin for supplying a supply voltage according to a resistance value of the external resistor Converting to a regulated supply voltage; a driver electrically coupled to the second driving voltage regulator and the second pin for outputting a driving voltage according to the input signal; and a current regulator electrically coupled The driver and the second driving voltage regulator are configured to output the charging current or the discharging current to the gate terminal of the GaN power switch according to the driving voltage and the regulated supply voltage. The power module of claim 13, wherein the current regulator comprises: a pull-up switch, a first end of the pull-up switch is configured to receive the regulated supply voltage, and a second end of the pull-up switch is configured to output the charging current, and one of the pull-up switches is configured to receive the a driving voltage; and a pull-down switch, the first end of the pull-down switch is electrically coupled to the second pin, and the second end of the pull-down switch is used to output the discharge current, and one of the pull-down switches is used for the control end To receive the driving voltage. The power module of claim 14, wherein the current regulator is configured to adjust the charging current and the discharging current according to the adjusted power supply voltage. The power module of claim 13, wherein the second driving voltage regulator comprises: a first transistor, comprising: a first end for receiving the supply voltage; and a second end for outputting the Adjusting the power supply voltage; and a control terminal; and a comparison amplifier comprising: a first input terminal electrically coupled to the first pin; and a second input terminal electrically coupled to the first transistor The second end; and an output end electrically coupled to the control end of the first transistor. The power module of claim 6, wherein the driving circuit is configured to the GaN power switch when the external resistor is a first resistance value The gate terminal provides a first charging current. When the external resistor is a second resistor value, the driving circuit provides a second charging current to the gate terminal of the GaN power switch, wherein the first resistor value is greater than In the second resistance value, the value of the first charging current is greater than the value of the second charging current; when the external resistor is a third resistance value, the driving circuit provides the gate terminal of the GaN power switch a first discharge current, when the external resistor is a fourth resistance value, the driving circuit provides a second discharge current to the gate terminal of the GaN power switch, wherein the third resistor value is greater than the fourth resistor The value of the first discharge current is greater than the value of the second discharge current. The power module of claim 17, wherein when the gate terminal of the GaN power switch receives the first charging current, the GaN power switch is turned on at a first conduction speed when the GaN power When the gate terminal of the switch receives the second charging current, the GaN power switch is turned on at a second conduction speed, wherein when the value of the first charging current is greater than the value of the second charging current, the first conducting The speed is greater than the second conduction speed. The power module of claim 17, wherein when the gate terminal of the GaN power switch receives the first discharge current, the GaN power switch is turned off at a first off speed when the nitriding When the gate terminal of the gallium power switch receives the second discharge current, the GaN power switch is turned off at a second turn-off speed, wherein when the value of the first discharge current is greater than the value of the second discharge current, The first turn-off speed is greater than the second turn-off speed. A control method for a power module, comprising: Adjusting the resistance value of an external resistor; adjusting a charging current or a discharging current of the driving circuit to a gate terminal of a gallium nitride power switch according to a resistance current value of the external resistor; and adjusting The charging current or the discharging current controls a speed at which the GaN power switch is turned on or off, wherein when the charging current or the discharging current increases, an on-speed or a shutdown speed of the GaN power switch is increased, When the discharge current or the discharge current decreases, the on or off speed of the GaN power switch is slowed down. The control method of claim 20, wherein the step of adjusting, by the current control unit, the charging current or the discharging current of the driving circuit to the gate terminal of the GaN power switch comprises: adjusting by a first driving voltage Adjusting a control voltage according to the resistance value of the external resistor; outputting a driving voltage according to the control voltage and an input signal through a driver; and outputting the charging current or the discharging current to the nitrogen according to the driving voltage through a current regulator The gate terminal of the gallium power switch. The control method of claim 20, wherein the step of adjusting, by the current control unit, the charging current or the discharging current of the driving circuit to the gate terminal of the GaN power switch comprises: adjusting by a second driving voltage Converting a supply voltage into a regulated supply voltage according to a resistance value of the external resistor; And outputting a driving voltage according to an input signal through a driver; and outputting the charging current or the discharging current to the gate terminal of the GaN power switch according to the driving voltage and the adjusting power supply voltage through a current regulator.