CN204116544U - A kind of dipulse proving installation for half-bridge IGBT module - Google Patents
A kind of dipulse proving installation for half-bridge IGBT module Download PDFInfo
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Abstract
The utility model relates to a kind of dipulse proving installation for half-bridge IGBT module, and dipulse sends out wave apparatus, voltage tester table, oscillograph and probe, three phase voltage regulating power supply, low tension potential source, tunable load inductance are arranged in cabinet; Dipulse is sent out in wave apparatus and is integrated with dipulse and sends out ripple plate, send out ripple plate by Fiber connection power unit board, power unit board drives IGBT module to be measured by IGBT drive circuit, send out ripple plate and produce pulse width modulating signal, signal is via optical fiber ingoing power cell board, control opening and shutoff of IGBT module to be measured by the driving circuit of power unit board again, the parameter of IGBT module can be measured afterwards.Advantage is: the parameter that can contrast different IGBT; Obtain the major parameter of IGBT in switching process; Consider practical manifestation when IGBT works in the converter; Test device system is integrated, and IGBT module dipulse convenient test is saved time.
Description
Technical field
The utility model relates to a kind of dipulse proving installation for half-bridge IGBT module, particularly relates to a kind of proving installation to IGBT module performance being object with half-bridge IGBT.
Background technology
IGBT (Insulated Gate Bipolar Transistor) i.e. insulated gate bipolar transistor, the compound full-control type voltage driven type power semiconductor device be made up of BJT (double pole triode) and MOS (insulating gate type field effect tube), has the advantage of the high input impedance of MOSFET and low conduction voltage drop two aspect of GTR concurrently.GTR saturation pressure reduces, and current carrying density is large, but drive current is larger; MOSFET driving power is very little, and switching speed is fast, but conduction voltage drop is large, and current carrying density is little.IGBT combines the advantage of above two kinds of devices, driving power is little and saturation pressure reduces, and is applicable to very much being applied to converter system as fields such as high voltage converter, high-voltage static var generator, rolling stock traction convertor, wind-force generating converter, HVDC Lights.
The application of IGBT is so extensive, and the thing followed is the kind of IGBT, producer also gets more and more.So become particularly important to the performance test of IGBT.Usually we mainly pass through to read corresponding datasheet to the understanding of certain IGBT, but in fact, parameter described in databook gets based on the test of some given external parameters, and the external parameter in practical application is all personalized, often different, therefore these parameters directly can not bring use a bit.We need to understand IGBT and show more really in a particular application.In datasheet, the parameter describing the behavior of the switch of IGBT mainly comprises: tdon, tr, tdoff, tf, Eon, Eoff, ISC etc.Observe these parameters, most effective method is exactly: " dipulse method of testing ".Dipulse experiment can be measured IGBT and drive plate in laboratory, is requisite testing procedure in design power unit.A dipulse tester for testing is built in this experiment, can carry out dipulse test more easily.
Summary of the invention
For overcoming the deficiencies in the prior art, the purpose of this utility model is to provide a kind of dipulse proving installation for half-bridge IGBT module, realizes conveniently test I GBT module parameters.
For achieving the above object, the utility model is achieved through the following technical solutions:
A kind of dipulse proving installation for half-bridge IGBT module, comprise cabinet, dipulse send out wave apparatus, voltage tester table, oscillograph and probe, three phase voltage regulating power supply, low tension potential source, tunable load inductance, dipulse sends out wave apparatus, voltage tester table, oscillograph and probe, three phase voltage regulating power supply, low tension potential source, tunable load inductance are arranged in cabinet;
Dipulse is sent out in wave apparatus and is integrated with dipulse and sends out ripple plate, send out ripple plate by Fiber connection power unit board, power unit board drives IGBT module to be measured by IGBT drive circuit, send out ripple plate and produce pulse width modulating signal, signal is via optical fiber ingoing power cell board, control opening and shutoff of IGBT module to be measured by the driving circuit of power unit board again, the parameter of IGBT module can be measured afterwards;
Oscillographic probe is removable probe, probe comprises high tension voltage test lead probe, low voltage voltage test lead probe and testing current end probe, according to test item test parameter, the voltage of the CE interpolar of the top tube and down tube of high tension voltage probe measurement IGBT module, the lower pipe IGBT drive waveforms of low pressure probe test, current probe measures the current waveform of the top tube and down tube of IGBT;
Three of three phase voltage regulating power supply export the extension line place connecting IGBT module to be measured three input metal row, for IGBT module to be measured is powered;
The output terminal of low tension potential source connects the drive end of pipe in IGBT module, and low tension potential source is the power supply being less than 20V;
The lead-in wire place of voltage tester list catenation IGBT module both positive and negative polarity busbar;
The two ends of tunable load inductance are connected to pipe CE interpolar on IGBT.
A described ripple plate of sending out is control core based on CPLD chip, controlled pulsewidth and the pulse distance of dipulse by the toggle switch sent out on ripple plate.
Described high tension voltage probe is High Pressure Difference sub-probe, and current probe is Luo-coil current probe.
Described tunable load inductance is composed in series by two inductance.
Compared with prior art, the beneficial effects of the utility model are:
1, the parameter of different IGBT can be contrasted, the performance of the IGBT of the such as parameter of the product of the different series of same brand, or different brands.
2., obtain the major parameter of IGBT in switching process, whether suitable with the numerical value assessing Rgon and Rgoff, assess the need of joining absorbing circuit etc.
3, practical manifestation when IGBT works in the converter is considered.Whether the reverse recovery current of such as diode is suitable, and whether due to voltage spikes during shutoff is suitable, and whether switching process has inappropriate concussion etc.
4, test device system is integrated, IGBT module dipulse is tested more convenient, more saves time.
Accompanying drawing explanation
Fig. 1 is power cell connection layout to be measured.
Fig. 2 is the dipulse test pattern of half-bridge IGBT module.
Fig. 3 is the dipulse proving installation circuit diagram of half-bridge IGBT module.
Fig. 4 is that dipulse sends out wave apparatus system diagram.
Fig. 5 is dipulse test waveform figure.
Fig. 6 is the dipulse test pattern of embodiment.
Fig. 7 is stray inductance test waveform figure.
Embodiment
Below in conjunction with Figure of description, the utility model is described in detail, but it should be noted that enforcement of the present utility model is not limited to following embodiment.
See Fig. 1-Fig. 7, a kind of dipulse proving installation for half-bridge IGBT module, comprise cabinet, dipulse send out wave apparatus, voltage tester table, oscillograph and probe, three phase voltage regulating power supply, low tension potential source, tunable load inductance, dipulse sends out wave apparatus, voltage tester table, oscillograph and probe, three phase voltage regulating power supply, low tension potential source, tunable load inductance are arranged in cabinet;
Dipulse is sent out in wave apparatus and is integrated with dipulse and sends out ripple plate, send out ripple plate by Fiber connection power unit board, power unit board drives IGBT module to be measured by IGBT drive circuit, send out ripple plate and produce pulse width modulating signal, signal is via optical fiber ingoing power cell board, control opening and shutoff of IGBT module to be measured by the driving circuit of power unit board again, the parameter of IGBT module can be measured afterwards;
Oscillographic probe is removable probe, probe comprises high tension voltage test lead probe, low voltage voltage test lead probe and testing current end probe, according to test item test parameter, the voltage of the CE interpolar of the top tube and down tube of high tension voltage probe measurement IGBT module, the lower pipe IGBT drive waveforms of low pressure probe test, current probe measures the current waveform of the top tube and down tube of IGBT;
Three of three phase voltage regulating power supply export the extension line place connecting IGBT module to be measured three input metal row, for IGBT module to be measured is powered;
The output terminal of low tension potential source connects the drive end of pipe in IGBT module, and low tension potential source is the power supply being less than 20V;
The lead-in wire place of voltage tester list catenation IGBT module both positive and negative polarity busbar;
The two ends of tunable load inductance are connected to pipe CE interpolar on IGBT.
Wherein, sending out a ripple plate is be control core based on CPLD chip, is controlled pulsewidth and the pulse distance of dipulse by the toggle switch sent out on ripple plate; High tension voltage probe is High Pressure Difference sub-probe, and current probe is Luo-coil current probe; Tunable load inductance is composed in series by two inductance.
Embodiment:
See Fig. 2, the lower pipe of IGBT module is measurand, c2 and the e1 end that direct supply U provides system input voltage to connect IGBT module, the upper pipe gate leve of IGBT drives negative pressure in addition to make pipe remain off state, upper pipe c2e2 two ends connect inductive load, utilize and send out wave device to lower pipe gate leve in addition dipulse drive waveforms.Observe lower pipe CE pole tension Vc1e1 waveform, lower pipe driving voltage Vg1e1 with oscillograph, flow through lower current I c.IGBT can be considered from these waveforms, drive the parameter of resistance and system stray inductance.
See Fig. 1, Fig. 3, Fig. 4, in test circuit, the lead-in wire place of power unit board both positive and negative polarity busbar to be measured in voltage tester list catenation dipulse test cabinet, voltage tester table gauge outfit is embedded in the position that test cabinet cabinet is easy to observe, to measure the voltage on DC bus.In Fig. 3, the input of corresponding power unit board and the DC bus after rectifier bridge are connected into test macro by " to-be-measured cell metal row ", IGBT module is just arranged on the original position of power unit board according to the assembling mode of power cell and only stays an IGBT module, installs the effect can tested when really working closer to IGBT module like this.Three of three phase voltage regulating power supply export the extension line place connecting power unit board to be measured three input metal row, in order to power to power cell, can find out the numerical value of input voltage with voltage test chart.The output terminal of low tension potential source connects the drive end of pipe in IGBT module, and Opposite direction connection ensures IGBT module is managed to be in cut-off state always, and this is the needs of IGBT dipulse test.Tunable load inductance is connected to the c2e2 two ends of pipe in IGBT module, is the series connection of two inductance, can regulating load inductance as required.
Dipulse is sent out in wave apparatus, dipulse is sent out wave apparatus inside and is integrated with dipulse and sends out ripple plate, send out ripple plate by Fiber connection power unit board to be measured, power unit board drives IGBT module to be measured by IGBT drive circuit, send out ripple plate to be responsible for producing pulse width modulating signal, signal via optical fiber ingoing power cell board, then controls opening and shutoff of IGBT module to be measured by the driving circuit of power unit board, can measure the correlation parameter of IGBT module afterwards.It is be control core based on CPLD chip that dipulse sends out ripple plate, is controlled pulsewidth and the pulse distance of dipulse by the toggle switch sent out on ripple plate, and the button S0 sent out on ripple plate often presses and will send a dipulse next time.
Concrete testing procedure:
Power cell comprises rectifier bridge, IGBT, electric capacity, and discharge resistance, and its syndeton is shown in Fig. 1.
1) power cell to be measured is loaded dipulse test cabinet assigned address, unit only stays an IGBT module to be measured.
2) line: the output line of three pressure regulators and to-be-measured cell three input ends are connected; Voltage tester table positive and negative lead wires is connected with the DC bus both positive and negative polarity of power cell to be measured; Pipe in the output terminal of low-tension supply and IGBT module is driven gate leve Opposite direction connection, and in guarantee, pipe gate leve is negative pressure always; The two ends of load inductance to be connected in IGBT module between pipe c2e2; Optical fiber pulse being sent out ripple plate is connected with power unit board; In power unit board, a road drive wire drives gate leve g1e1 to be connected with the lower pipe of IGBT module; Voltage probe is connected the lower pipe c1e1 place of IGBT module, pipe e1 pole place under current probe connection IGBT module, low pressure probe connects the lower pipe gate pole g1e1 of IGBT module.
3) power on: open to the upper pipe gate leve of IGBT module for the low tension potential source of negative pressure; Send out ripple plate to dipulse to power; The power supply of power unit board is generally power taking from the DC bus of power cell; Regulate three pressure regulators, observe voltage tester table gauge outfit numerical value, voltage is adjusted to required DC voltage by three pressure regulators.
4) press pulse and send out button on ripple plate, now send out dipulse is sent to IGBT module by ripple plate lower pipe drive end by power unit board, control the switch of the lower pipe of IGBT module.Oscilloscope display test data and waveform are as shown in Figure 5.
5) with the lower current I c of Luo-coil current probe test I GBT module; Measure lower pipe driving voltage Vg1e1 signal with ordinary ultrasonic probe, take off pipe Vc1e1 voltage, the gate pole of upper pipe IGBT has added negative pressure with high_voltage isolation probe, therefore it turns off, and a fly-wheel diode in action.
6) test philosophy: see Fig. 5, in the t0 moment, gate pole releases first pulse, and tested lower pipe IGBT module saturation conduction, DC bus-bar voltage U is added on load L, and the electric current of inductance linearly rises.Current expression is: I=Ut/L.
In the t1 moment, the numerical value of inductive current is determined by U and L, and when U and L determines, the numerical value of electric current is determined by t1, and the time is longer, and electric current is larger.Therefore the numerical value of electric current can independently be set.In the t1 moment, tested IGBT module turns off, the electric current of load L by upper pipe diode continuousing flow, this electric current slow-decay.Because current probe is placed on the emitter place of lower pipe, therefore, when diode continuousing flow, IGBT module turns off, and oscillograph be cannot see this electric current.
In the t2 moment, the rising edge of second pulse arrives, and the conducting again of tested IGBT module, fly-wheel diode enters Reverse recovery state, and reverse recovery current can pass IGBT module, and current probe can capture this electric current.In the t2 moment, emphasis is the opening process observing IGBT module.Reverse recovery current is important monitored object, and the form of this electric current directly has influence on many important indicators of commutation course.
In the t3 moment, tested IGBT module turns off again, and now electric current is comparatively large, because the existence of bus stray inductance, can produce certain due to voltage spikes.In the t3 moment, emphasis is the turn off process observing IGBT, and due to voltage spikes is important monitored object.
7) point paid close attention to is needed:
In opening process, need to pay close attention to
The di/dt of the reverse recovery current of a diode
The peak value of the reverse recovery current of b diode
Whether c Reverse recovery after-current has concussion, and how long hangover has
Whether dVce voltage correctly changes
E calculates loss, (relying on oscillograph function)
Whether adjustment gate electrode resistance Rgon can affect this process consumingly, suitable in order to determine the numerical value of Rgon.
In turn off process, need to pay close attention to the due to voltage spikes for Vce, it is the product of DC bus stray inductance and di/dt, by observing this spike, can assess the safe coefficient of IGBT module when turning off.The general all outwardness of Vce spike, when short circuit or overload, this spike can reach mxm., than much higher during normal work.Do turn off test time, the turn-off speed of IGBT, can determine that the size whether IGBT exceeds safety operation area and loss can adjust suitable pass resistance break Rgoff accordingly.
8) the risk point test of diode.
All power semiconductors, comprise igbt chip and diode chip for backlight unit, the risk faced when the risk faced in the moment turned off is opened much larger than it.Diode is in reversely restoring process, and its instantaneous power can not exceed the numerical value of regulation, otherwise just has the risk of damage.Therefore, the instantaneous power of diode is important criterion.
See Fig. 6, method of testing:
Current probe is added in the collector of upper pipe IGBT, fly-wheel diode electric current I rr;
Voltage probe is added in the CE interpolar of upper pipe IGBT, voltage is Uc2e2;
Long-pending as a function passage by the instantaneous value of voltage and electric current, represents the instantaneous power of diode;
The Reverse recovery moment of upper pipe diode is caught with oscillograph.
When diode reverse recovery current rises, the voltage that stray inductance produces offsets with busbar voltage.When reverse recovery current declines, in the same way, voltage falls on the diode, and due to voltage spikes appears in diode, increased risk for stray induced voltages and busbar voltage.If stray inductance is larger, diode is just more dangerous, easily runs out of safety operation area.
The due to voltage spikes of diode produces because stray inductance acts on mutually with the rear edge of diode reverse recovery current.So the slope reducing the stray inductance of DC master row and the later half edge of optimization reverse recovery current effectively can improve the safety allowance of diode.Usually, in the datasheet of IGBT, the part about diode can indicate the maximum di/dt level of reverse recovery current, usually can not exceed this numerical value.Otherwise reverse recovery current may be caused to shake.The shape of diode reverse recovery current depends primarily on the design of IGBT manufacturer, the slope in its forward position and the rear impact being subject to Rgon along slope to a great extent.Once increase Rgon, reverse recovery current then can relax a lot.In powerful occasion, usually need the softness of the diode pursued, and this is mainly reflected in the rear edge of reverse recovery current in shape.
9) measurement of main circuit stray inductance.
See shown in Fig. 7 waveform, when IGBT module is opened, Ic starts to increase, and the fly-wheel diode now going up pipe IGBT module is in Reverse recovery, and this diode does not have blocking ability, upper pipe Uce=0.When Ic starts to increase, the direction of the voltage that stray inductance is responded to is as shown in the figure, contrary with busbar voltage, so a breach has appearred in the waveform now recorded on the Vce of lower pipe, sees shown in the dotted line in Fig. 7 waveform.This breach voltage Producing reason is that stray inductance counteracts a part of busbar voltage.That is, the voltage of breach is the induced voltage in stray inductance.
Computing formula is Us=Ls*di/dt;
Read Us from oscillograph, then read di/dt, in generation, enters above formula, just can calculate the numerical value of stray inductance Ls.
The utility model has the advantages that:
1) test device system is integrated, makes test more convenient, more saves time;
2) major parameter of IGBT in switching process is assessed, and the numerical value of assessment Rgon and Rgoff;
3) evaluating system stray inductance size.
Claims (4)
1. the dipulse proving installation for half-bridge IGBT module, it is characterized in that, comprise cabinet, dipulse send out wave apparatus, voltage tester table, oscillograph and probe, three phase voltage regulating power supply, low tension potential source, tunable load inductance, dipulse sends out wave apparatus, voltage tester table, oscillograph and probe, three phase voltage regulating power supply, low tension potential source, tunable load inductance are arranged in cabinet;
Dipulse is sent out in wave apparatus and is integrated with dipulse and sends out ripple plate, send out ripple plate by Fiber connection power unit board, power unit board drives IGBT module to be measured by IGBT drive circuit, send out ripple plate and produce pulse width modulating signal, signal is via optical fiber ingoing power cell board, control opening and shutoff of IGBT module to be measured by the driving circuit of power unit board again, the parameter of IGBT module can be measured afterwards;
Oscillographic probe is removable probe, probe comprises high tension voltage test lead probe, low voltage voltage test lead probe and testing current end probe, according to test item test parameter, the voltage of the CE interpolar of the top tube and down tube of high tension voltage probe measurement IGBT module, the lower pipe IGBT drive waveforms of low pressure probe test, current probe measures the current waveform of the top tube and down tube of IGBT;
Three of three phase voltage regulating power supply export the extension line place connecting IGBT module to be measured three input metal row, for IGBT module to be measured is powered;
The output terminal of low tension potential source connects the drive end of pipe in IGBT module, and low tension potential source is the power supply being less than 20V;
The lead-in wire place of voltage tester list catenation IGBT module both positive and negative polarity busbar;
The two ends of tunable load inductance are connected to pipe CE interpolar on IGBT.
2. a kind of dipulse proving installation for half-bridge IGBT module according to claim 1, is characterized in that, a described ripple plate of sending out is control core based on CPLD chip, controlled pulsewidth and the pulse distance of dipulse by the toggle switch sent out on ripple plate.
3. a kind of dipulse proving installation for half-bridge IGBT module according to claim 1, is characterized in that, described high tension voltage probe is High Pressure Difference sub-probe, and current probe is Luo-coil current probe.
4. a kind of dipulse proving installation for half-bridge IGBT module according to claim 1, it is characterized in that, described tunable load inductance is composed in series by two inductance.
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Address after: 114051 Anshan high tech Zone, Liaoning province science and technology road, No. 108 Patentee after: Wolong electric group Liaoning Rongxin electric drive Co., Ltd. Address before: 114051 Anshan high tech Zone, Liaoning province science and technology road, No. 108 Patentee before: Liaoning Rongxin Electric Drive Technology Co., Ltd. |
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Effective date of registration: 20210406 Address after: 312000 Economic Development Zone, Shangyu District, Shaoxing City, Zhejiang Province Patentee after: WOLONG ELECTRIC GROUP Co.,Ltd. Patentee after: WOLONG ELECTRIC GROUP LIAONING RONGXIN ELECTRIC TRANSMISSION Co.,Ltd. Address before: 114051 No. 108, science and technology road, hi tech Zone, Liaoning, Anshan Patentee before: WOLONG ELECTRIC GROUP LIAONING RONGXIN ELECTRIC TRANSMISSION Co.,Ltd. |