CN109696612A - The dipulse test macro and test method of automobile IGBT module - Google Patents
The dipulse test macro and test method of automobile IGBT module Download PDFInfo
- Publication number
- CN109696612A CN109696612A CN201710977042.4A CN201710977042A CN109696612A CN 109696612 A CN109696612 A CN 109696612A CN 201710977042 A CN201710977042 A CN 201710977042A CN 109696612 A CN109696612 A CN 109696612A
- Authority
- CN
- China
- Prior art keywords
- test
- igbt module
- temperature
- subject
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 191
- 238000010998 test method Methods 0.000 title claims abstract description 11
- 230000001105 regulatory effect Effects 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 25
- 238000005057 refrigeration Methods 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 16
- 230000007613 environmental effect Effects 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 210000001367 artery Anatomy 0.000 claims 1
- 238000013507 mapping Methods 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 210000003462 vein Anatomy 0.000 claims 1
- 230000006872 improvement Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M17/00—Testing of vehicles
- G01M17/007—Wheeled or endless-tracked vehicles
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Control Of Temperature (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention discloses the dipulse test macro and test method of a kind of automobile IGBT module, the test macro is integrally disposed test loop, drive control circuit and test temperature regulating device, subject IGBT module is set in test loop, drive control circuit is connect with the driving end of subject IGBT module, test loop provides adjustable test voltage when test, it tests electric current and gives subject IGBT module, dipulse needed for drive control circuit provides gives subject IGBT module as test pulse, the temperature for being tested IGBT module is carried out by test temperature regulating device adjusting is raised and lowered, to be adjusted to required test temperature value；The test method is the test method using above-mentioned test macro.The present invention can meet the dipulse testing requirement of automotive grade IGBT module under high temperature, low temperature and extreme temperature operating condition simultaneously, and have many advantages, such as that simple test operation, required at low cost, level of integrated system and testing efficiency are high.
Description
Technical field
The present invention relates to automobile IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar is brilliant
Body pipe) module testing technical field more particularly to a kind of automobile IGBT module dipulse test macro and test method.
Background technique
As the increasingly depleted and environmental problem of fossil fuel is got worse, automotive field just gradually by hybrid power,
Pure electric automobile and fuel cell car replace orthodox car by the electric car of representative, wherein using electric vehicle as the new energy of representative
The important development direction that source automobile has become for automobile industry.Electric car is mainly using battery as energy source, completely or partially
Automobile is driven by motor, pure electric automobile (EV), mixed power electric car (HEV) and fuel battery electric vapour can be divided into
The energy streaming system as new-energy automobile such as vehicle, motor and electric machine controller, has in entire new-energy automobile to Guan Chong
The effect wanted, and IGBT module is as the converting member that DC power supply is converted to AC power source, is in electric machine controller
Core component, thus the performance reliability of automobile entirety will be directly affected to the performance of IGBT module.
Electric machine controller power density is higher in automobile, thus automotive grade IGBT module is all the automotive grade of special configuration
Module, automotive grade IGBT module power density are higher compared to conventional IGBT module, usually by six integrated chips one
Rise, and have PINFIN(needle wing for IGBT) IGBT module of structure or the IGBT module of included radiator.In order to ensure
The performance of IGBT module is stablized, it usually needs carries out dynamic test to IGBT module, the test of dipulse is that IGBT module is opened
Clearance is disconnected to wait a vital testing process in dynamic test.
Automotive grade IGBT module is still in the primary research stage at present, to the application study of automotive grade IGBT module also compared with
It is few, it is tested for the dipulse of automotive grade IGBT module, is usually all directly to be carried out under normal temperature environment, i.e., does not all consider usually
Temperature case problem, directly test obtains the dynamic parameter of IGBT module under normal temperature environment.And the ring of automobile institute possible application
Border is extremely complex, such as may be hot environment, it is also possible to be low temperature environment, in some instances it may even be possible to be thermal extremes operating condition or extreme low temperature
Operating condition, and for IGBT module low current, cryogenic conditions can be seriously affected to diode reverse recovery performance, and hot environment then can
Opening process and turn off process to IGBT switch cause the influence of very severe, and above-mentioned test only by room temperature carries out vapour
The mode of vehicle grade IGBT module dipulse test, lacks temperature environment conditions, testing obtained dynamic parameter can not be accurate
The dynamic parameter state for reflecting IGBT module passes through the IGBT mould of test when being applied to high temperature, low temperature or extreme temperature environment
Block is likely to break down, and influences the stable operation of automobile.To the IGBT module under test hot environment, a kind of solution party
Method is to use high-temperature cabinet or environmental cabinet, but when use high-temperature cabinet or environmental cabinet, the mode of high-temperature cabinet or environmental cabinet is for acquisition
The requirement of equipment heatproof is relatively high, and difficulty of test is larger, and test data collection is more difficult, is not easy to practical operation.
Summary of the invention
The technical problem to be solved in the present invention is that, for technical problem of the existing technology, the present invention provides one
It kind can meet the dipulse testing requirement of automotive grade IGBT module under high temperature, low temperature and extreme temperature operating condition simultaneously, and survey
Try the dipulse test system of easy to operate, required at low cost, level of integrated system and the high automobile IGBT module of testing efficiency
System and test method.
In order to solve the above technical problems, technical solution proposed by the present invention are as follows:
A kind of dipulse test macro of automobile IGBT module, including it is integrally disposed have test loop, drive control circuit with
And test temperature regulating device, subject IGBT module are set in the test loop, the drive control circuit and the quilt
The driving end connection of IGBT module is tried, when test, the test loop provided adjustable test voltage, test electric current to subject
IGBT module, dipulse needed for the drive control circuit provides give subject IGBT module as test pulse, pass through the survey
Examination temperature-adjusting device carries out the temperature for being tested IGBT module adjusting is raised and lowered, to be adjusted to required test temperature value.
Further improvement as present system: the test temperature regulating device includes for increasing test temperature
Heating module and refrigeration module for reducing test temperature, when test, start the heating module or the refrigeration module
Carry out test temperature adjusting.
Further improvement as present system: the heating module includes heating plate, is provided in the heating plate
Honeycomb-like multiple connecting holes, it is described subject IGBT module substrate in pinfin microwell array be inserted into each connection
Kong Zhong, so that the substrate of subject IGBT module comes into full contact with the heating plate.
Further improvement as present system: it is filled between the connecting hole and the pinfin array of insertion
It can heat medium.
Further improvement as present system: the heating module includes heating plate and intermediate transit layer, described
Honeycomb-like multiple connecting holes are provided on intermediate transit layer, the heating plate passes through the intermediate transit layer and the subject
The substrate of IGBT module connects, and pinfin microwell array is inserted into each connecting hole in the substrate of the subject IGBT module
In, so that the substrate of subject IGBT module comes into full contact with the heating plate.
Further improvement as present system: the refrigeration module is adjustable liquid cooling heat radiation system.
Further improvement as present system: further including the control mould connecting with the heating module, refrigeration module
Block, for obtaining control instruction, control starts the heating module or refrigeration module.
Further improvement as present system: the test loop includes sequentially connected DC power source unit, steady
Unit, discharge loop, subject IGBT module and variable load unit are pressed, it is negative by the output for adjusting the variable load unit
Carry the test voltage for adjusting the subject IGBT module, test electric current.
Further improvement as present system: the voltage regulation unit includes electric capacity of voltage regulation；The discharge loop includes
Control switch and discharge resistance access the discharge resistance by control switch control and discharge.
Further improvement as present system: the drive control circuit includes sequentially connected double pulse generator
Unit, control unit and driving unit, dipulse needed for the pulse generator element generates, are produced by described control unit
After raw corresponding pwm signal, by the driving unit by the pwm signal be sent respectively to subject IGBT module upper tube,
Down tube is cut-off with controlling.
The present invention further provides the test method of above-mentioned dipulse test macro, step includes:
S1. the target detection temperature and current environmental temperature of test are executed needed for obtaining；
S2. the target detection temperature that will acquire is compared with current environmental temperature, is worked as if the target detection temperature is higher than
Preceding environment temperature, control start for increasing the heating module of test temperature in the test temperature regulating device, if the mesh
It marks test temperature and is lower than current environmental temperature, control starts the system in the test temperature regulating device for reducing test temperature
Cold module；
S3. after current environmental temperature reaches target detection temperature, start test voltage, test needed for the test loop provides
Dipulse signal needed for electric current and drive control circuit provide gives subject IGBT module, with test subject IGBT in target detection
At a temperature of dynamic parameter.
Further improvement as the method for the present invention: further include after the step S3 adjust test temperature and be supplied to by
Test voltage, the test electric current of IGBT module are tried, to test the dynamic parameter curve for obtaining being tested IGBT under different test temperatures
Step.
Compared with the prior art, the advantages of the present invention are as follows:
1) present invention constitutes dipulse by integrally disposed test loop, drive control circuit and test temperature regulating device and surveys
Test system can carry out dipulse test, energy to automotive grade IGBT module in high temperature, low temperature and extreme temperature operating condition respectively
Enough while meeting high temperature, low temperature and the thermal extremes of automotive grade IGBT module or the dipulse testing requirement of extreme low temperature, from
And test and obtain influence of the different temperatures to IGBT dynamic parameter, IGBT can accurately be reflected by testing obtained dynamic parameter
The dynamic parameter state of module, to guarantee performance reliability of the automotive grade IGBT under all kinds of temperature environments, and by integrated
The mode of setting, entire test operating procedure is simple, can easily get test data, to realize efficient dipulse
Test；
2) present invention further passes through integrally disposed heating module, refrigeration module simultaneously, when needing to be implemented high temperature test, starting
Heating module carries out temperature adjusting, and when needing to be implemented low-temperature test, starting refrigeration module carries out temperature adjusting, test operation letter
It is single, high temperature, low-temperature test demand can be met simultaneously；
3) it is further contemplated that the special construction of automotive grade IGBT module, honeycomb-like by being provided on hot plate
Multiple connecting holes, each connecting hole are mutually matched with pinfin array in the substrate of subject IGBT module, will be tested IGBT module
Substrate in pinfin microwell array be inserted into each connecting hole, enable subject IGBT module substrate filled with heating plate
Tap touching, effectively improves heating effect, and what can be guarded against accurately reaches required test temperature, to guarantee dipulse test
Measuring accuracy.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the dipulse test macro of 1 automobile IGBT module of the embodiment of the present invention.
Fig. 2 is the structural schematic diagram of heating module in the embodiment of the present invention 1.
Fig. 3 is the structural schematic diagram of test loop in the embodiment of the present invention 1, drive control circuit.
Fig. 4 is the structural schematic diagram of heating module in the embodiment of the present invention 2.
Marginal data: 1, test loop；2, drive control circuit；3, test temperature regulating device；31, heating module；
311, heating plate；312, intermediate transit layer；32, refrigeration module；4, connecting hole；5, it is tested the substrate of IGBT module；51,pinfin
Array.
Specific embodiment
Below in conjunction with Figure of description and specific preferred embodiment, the invention will be further described, but not therefore and
It limits the scope of the invention.
Embodiment 1:
As shown in Figure 1, the dipulse test macro of the present embodiment automobile IGBT module, including it is integrally disposed have test loop 1,
Drive control circuit 2 and test temperature regulating device 3, subject IGBT module are set in test loop 1, drive control circuit
2 connects with the driving end of subject IGBT module, and test loop 1 provides adjustable test voltage, tests electric current to subject when test
IGBT module, the double punchings needed for providing of drive control circuit 2 are given subject IGBT module as test pulse, are adjusted by test temperature
Device 3 carries out the temperature for being tested IGBT module adjusting is raised and lowered, to be adjusted to required test temperature value.
The present embodiment is made up of integrally disposed test loop 1, drive control circuit 2 and test temperature regulating device 3
Dipulse test macro provides adjustable test voltage by test loop 1, test electric current gives subject IGBT module, drive control
The double punchings needed for providing of circuit 2 give subject IGBT module as test pulse, and binding test temperature-adjusting device 3 will be tested IGBT mould
The temperature of block carries out that adjusting is raised and lowered, and allows to respectively to automotive grade IGBT module in high temperature, low temperature and extreme temperature
Dipulse test is carried out when spending operating condition, high temperature, low temperature and thermal extremes or the pole of automotive grade IGBT module can be met simultaneously
The dipulse testing requirement of low temperature is held, so that test obtains influence of the different temperatures to IGBT dynamic parameter, when such as limiting temperature
The influence that turn off process is opened to device, the dynamic parameter of IGBT module can accurately be reflected by testing obtained dynamic parameter
State, to guarantee performance reliability of the automotive grade IGBT under all kinds of temperature environments, and by integrally disposed mode, entirely
Test operating procedure is simple, can easily get test data, to realize efficient dipulse test.
In the present embodiment, test temperature regulating device 3 includes heating module 31 for increasing test temperature and is used for
The refrigeration module 32 for reducing test temperature, starting heating module 31 or refrigeration module 32 carry out test temperature adjusting when test.It is logical
It crosses while integrally disposed heating module 31, refrigeration module 32 starts heating module 31 and carry out temperature when needing to be implemented high temperature test
Degree is adjusted, and when needing to be implemented low-temperature test, starting refrigeration module 32 carries out temperature adjusting, and test operation is simple, can be simultaneously
Meet high temperature, low-temperature test demand.
As shown in Fig. 2, heating module 31 includes heating plate 311 in the present embodiment, heating plate 311 is planar panel structure, is added
It is provided with honeycomb-like multiple connecting holes 4 on hot plate 311, that is, forms cellular heating plate, is tested in the substrate 5 of IGBT module
The matching of pinfin array 51 is inserted into each connecting hole 4, so that the substrate 5 of subject IGBT module sufficiently connects with heating plate 311
Touching.
Since IGBT is PINFIN structure in automotive grade IGBT module, pinfin array is distributed on the substrate of module
51, i.e. the IGBT module substrate structure that is out-of-flatness, and the generally planar hardened structure of traditional heating plate, if directly by IGBT mould
The substrate of block is set in traditional heating plate, and IGBT module is since there are gap, nothings between the meeting of PINFIN structure and heating plate
Method comes into full contact with, so that heating effect is poor, it is difficult to the test temperature tested needed for accurately reaching, the result for causing dipulse to be tested
There are biggish test errors.The present embodiment passes through the special PINFIN structure for considering automotive grade IGBT module, by heating
Be provided with honeycomb-like multiple connecting holes 4 on plate 311, each connecting hole 4 with pinfin gusts in the substrate 5 of subject IGBT module
Column 51 are mutually matched, and the matching of pinfin array 51 in the substrate 5 for being tested IGBT module is inserted into each connecting hole 4, so that
Subject IGBT module substrate 5 can be come into full contact with heating plate 311, i.e., subject IGBT module substrate 5 and heating plate 311 it
Between can effectively improve heating effect with intimate contact, easily can accurately reach required test temperature, to guarantee double
The measuring accuracy of pulse test.
In the present embodiment, between connecting hole 4 and the pinfin array 51 of insertion filled with can heat medium, medium specifically may be used
Can also use other can heat medium using oil, high-temp liquid or high temperature paste medium.I.e. in the bee of heating plate 311
It is filled between being contacted in nest structure with IGBT module pinfin using oil, high-temp liquid or high temperature paste medium, with reality
The now temperature simulation of each type high temp.
By the heating module 31 of above structure, the High Temperature Simulation between room temperature and 175 DEG C can achieve.
In the present embodiment, refrigeration module 32 is specially adjustable liquid cooling heat radiation system, and adjustable liquid cooling heat radiation system can pass through control
System is to control to adjust temperature.The temperature that adjustable liquid cooling heat radiation system specifically may be implemented in room temperature to -40 DEG C of cryogenic conditions is adjusted, knot
It closes and states heating module 31, the simulation test under -40 DEG C of low temperature to each temperature case in 175 DEG C of high temperature ranges may be implemented.
Further include the control module being connect with heating module 31, refrigeration module 32 in the present embodiment, refers to for obtaining control
It enables, control starting heating module 31 or refrigeration module 32, high temperature may be implemented by control module, the automatic of low-temperature test cuts
It changes.
As shown in figure 3, in the present embodiment test loop 1 specifically include sequentially connected DC power source unit, voltage regulation unit,
Discharge loop, subject IGBT module and variable load unit, the output loading by adjusting variable load unit adjust subject
The test voltage of IGBT module, test electric current；Voltage regulation unit is specially electric capacity of voltage regulation, and discharge loop includes control switch and puts
Resistance controls access discharge resistance by control switch and discharges.
As shown in figure 3, drive control circuit 2 includes sequentially connected double pulse generator unit, control in the present embodiment
Unit and driving unit, dipulse needed for pulse generator element generates, generate corresponding pwm signal by control unit
Afterwards, pwm signal the subject upper tube of IGBT module, down tube is sent respectively to by driving unit to cut-off to control.Dipulse hair
For raw device unit especially by the software program of the load pulses generator function in host computer, dipulse time constant can be according to reality
Border demand adjusts setting, and control unit specifically uses control panel, and driving unit specifically uses driving plate.
When work, inputted by direct-current input power supplying and voltage regulation capacitor as DC energy, tunable load guarantees IGBT mould
Block opens the simulation of shutdown operating condition under various voltages, current condition, and discharge loop discharges capacitor internal after the completion of experiment
Storage energy after, by host computer send dipulse logic be handed down to control panel, pass through control panel generate dipulse PWM letter
Number, the upper tube or down tube for being handed down to driving plate control IGBT module open shutdown.
The present embodiment utilizes the test method of above-mentioned dipulse test macro, and step includes:
S1. the target detection temperature and current environmental temperature of test are executed needed for obtaining；
S2. the target detection temperature that will acquire is compared with current environmental temperature, if target detection temperature, which is higher than, works as front ring
Border temperature, control start the heating module 31 for increasing test temperature, if target detection temperature is lower than current environmental temperature, control
The refrigeration module 32 that system starts for reducing test temperature；
S3. after current environmental temperature reaches target detection temperature, starting test loop 1 provides required test voltage, test electric current
And drive control circuit 2 provides required dipulse signal and gives subject IGBT module, with test subject IGBT in target detection temperature
Dynamic parameter under degree.
It is high temperature, low temperature or thermal extremes needed for capable of easily being executed to automotive grade IGBT module, low by the above method
Warm environment dipulse test, test process is simple and testing efficiency is high, and can acquire complete different temperatures to IGBT
The influence of dynamic parameter.
It further include the test electricity for adjusting test temperature and being supplied to subject IGBT module in the present embodiment, after step S3
Pressure, test electric current, to test the dynamic parameter curve step for obtaining being tested IGBT under different test temperatures, by different test temperatures
The dynamic parameter curve of lower subject IGBT, can intuitively acquire relationship between the dynamic parameter of IGBT and temperature and
Variation tendency, to can determine to obtain the IGBT module dynamic parameter state for considering temperature environment conditions.
Embodiment 2:
The present embodiment is substantially the same manner as Example 1, the difference is that, in the present embodiment heating module 31 be include heating plate
311 and intermediate transit layer 312, heating plate 311 is planar panel structure, is provided on intermediate transit layer 312 honeycomb-like more
A connecting hole 4 adds a cellular interposer, the base that heating plate 311 passes through intermediate transit layer 312 and subject IGBT module
Plate 5 connects, and is tested the matching of pinfin array 51 in the substrate 5 of IGBT module and is inserted into each connecting hole 4, so that subject IGBT
The substrate 5 of module comes into full contact with heating plate 311.
The present embodiment realizes heating plate 311 and subject IGBT module by adding the intermediate transit layer 312 of honeycomb structure
Substrate between matching connection, may not need change heating plate 311 structure.
Above-mentioned only presently preferred embodiments of the present invention, is not intended to limit the present invention in any form.Although of the invention
It has been disclosed in a preferred embodiment above, however, it is not intended to limit the invention.Therefore, all without departing from technical solution of the present invention
Content, technical spirit any simple modifications, equivalents, and modifications made to the above embodiment, should all fall according to the present invention
In the range of technical solution of the present invention protection.
Claims (12)
1. a kind of dipulse test macro of automobile IGBT module, it is characterised in that including it is integrally disposed have test loop (1),
Drive control circuit (2) and test temperature regulating device (3), subject IGBT module are set in the test loop (1), institute
It states drive control circuit (2) connect with the driving end of the subject IGBT module, when test, test loop (1) offer was adjustable
Test voltage, test electric current give subject IGBT module, dipulse needed for the drive control circuit (2) provides is as test arteries and veins
It rushes and gives subject IGBT module, the temperature for being tested IGBT module is increased or dropped by the test temperature regulating device (3)
Low adjustment, to be adjusted to required test temperature value.
2. the dipulse test macro of automobile IGBT module according to claim 1, which is characterized in that the test temperature
Spending regulating device (3) includes for increasing the heating module of test temperature (31) and for reducing the refrigeration mould of test temperature
Block (32), when test, starts the heating module (31) or the refrigeration module (32) carries out test temperature adjusting.
3. the dipulse test macro of automobile IGBT module according to claim 2, which is characterized in that the heated mould
Block (31) includes heating plate (311), and honeycomb-like multiple connecting holes (4), the subject are provided on the heating plate (311)
Pinfin array (51) matching is inserted into each connecting hole (4) in the substrate (5) of IGBT module, so that subject IGBT mould
The substrate of block comes into full contact with the heating plate (311).
4. the dipulse test macro of automobile IGBT module according to claim 3, it is characterised in that: the connecting hole
(211) being filled between the pinfin array (51) of insertion can heat medium.
5. the dipulse test macro of automobile IGBT module according to claim 2, it is characterised in that: the heated mould
Block (31) includes heating plate (311) and intermediate transit layer (312), is provided on the intermediate transit layer (312) in honeycomb
Multiple connecting holes (4), the heating plate (311) pass through the intermediate transit layer (312) and it is described subject IGBT module base
Plate (5) connects, and pinfin array (51) matching is inserted into each connecting hole in the substrate (5) of the subject IGBT module
(4) in, so that the substrate (5) of subject IGBT module comes into full contact with the heating plate (311).
6. the dipulse test macro of the automobile IGBT module according to any one of claim 2~5, feature exist
In the refrigeration module (32) is adjustable liquid cooling heat radiation system.
7. the dipulse test macro of the automobile IGBT module according to any one of claim 2~5, feature exist
In, it further include the control module being connect with the heating module (31), refrigeration module (32), for obtaining control instruction, control
Start the heating module (31) or refrigeration module (32).
8. the dipulse test macro of automobile IGBT module described according to claim 1~any one of 5, feature exist
In, the test loop (1) include sequentially connected DC power source unit, voltage regulation unit, discharge loop, subject IGBT module with
And variable load unit, the output loading by adjusting the variable load unit adjust the test electricity of the subject IGBT module
Pressure, test electric current.
9. the dipulse test macro of automobile IGBT module according to claim 8, which is characterized in that the pressure stabilizing list
Member includes electric capacity of voltage regulation；The discharge loop includes control switch and discharge resistance, is controlled and is accessed by the control switch
The discharge resistance discharges.
10. the dipulse test macro of automobile IGBT module described according to claim 1~any one of 5, feature
It is, the drive control circuit (2) includes sequentially connected double pulse generator unit, control unit and driving unit,
Dipulse needed for the pulse generator element generates, after generating corresponding pwm signal by described control unit, by described
The pwm signal is sent respectively to the upper tube of subject IGBT module, down tube and is cut-off with controlling by driving unit.
11. using the test method of any one of the claim 1~10 dipulse test macro of automobile IGBT module,
It is characterized in that, step includes:
S1. the target detection temperature and current environmental temperature of test are executed needed for obtaining；
S2. the target detection temperature that will acquire is compared with current environmental temperature, is worked as if the target detection temperature is higher than
Preceding environment temperature, control start for increasing the heating module (31) of test temperature in the test temperature regulating device (3), if
The target detection temperature is lower than current environmental temperature, and control starts in the test temperature regulating device (3) for reducing survey
Try the refrigeration module (32) of temperature；
S3. after current environmental temperature reaches target detection temperature, start test voltage needed for the test loop (1) provides, survey
It tries electric current and drive control circuit (2) provides required dipulse signal and gives subject IGBT module, with test subject IGBT in mesh
Dynamic parameter at a temperature of mapping examination.
12. test method according to claim 11, it is characterised in that: further include adjusting test temperature after the step S3
And it is supplied to the test voltage of subject IGBT module, test electric current, it obtains being tested IGBT's under different test temperatures to test
Dynamic parameter curve step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710977042.4A CN109696612B (en) | 2017-10-19 | 2017-10-19 | Double-pulse test system and method for IGBT module for automobile |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710977042.4A CN109696612B (en) | 2017-10-19 | 2017-10-19 | Double-pulse test system and method for IGBT module for automobile |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109696612A true CN109696612A (en) | 2019-04-30 |
| CN109696612B CN109696612B (en) | 2020-11-27 |
Family
ID=66225009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710977042.4A Active CN109696612B (en) | 2017-10-19 | 2017-10-19 | Double-pulse test system and method for IGBT module for automobile |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109696612B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426620A (en) * | 2019-09-03 | 2019-11-08 | 广东电网有限责任公司 | A kind of compression joint type IGBT module test macro and test method |
| CN111007381A (en) * | 2019-12-27 | 2020-04-14 | 东风航盛（武汉）汽车控制系统有限公司 | IGBT thermal state on-load voltage stress test system and method thereof |
| CN111398770A (en) * | 2020-04-14 | 2020-07-10 | 西安易恩电气科技有限公司 | Power semiconductor device testing tool with protection structure |
| CN111398771A (en) * | 2020-04-14 | 2020-07-10 | 西安易恩电气科技有限公司 | Push-pull power semiconductor device test fixture |
| CN111398769A (en) * | 2020-04-14 | 2020-07-10 | 西安易恩电气科技有限公司 | High-temperature test tool for power semiconductor device |
| CN112327126A (en) * | 2020-10-28 | 2021-02-05 | 广州汽车集团股份有限公司 | IGBT module performance test system and method |
| CN112595523A (en) * | 2020-11-23 | 2021-04-02 | 一汽解放汽车有限公司 | PVT test system |
| CN113608092A (en) * | 2021-06-28 | 2021-11-05 | 臻驱科技（上海）有限公司 | Double-pulse test system |
| CN114325062A (en) * | 2022-03-10 | 2022-04-12 | 杭州飞仕得科技有限公司 | Current testing method of power module |
| CN115656770A (en) * | 2022-10-19 | 2023-01-31 | 杭州国磊半导体设备有限公司 | Method and device for testing power driving chip, computer equipment and storage medium |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020050834A1 (en) * | 2000-07-10 | 2002-05-02 | Olsen Douglas S. | Apparatus and method for controlling temperature in a device under test using integrated temperature sensitive diode |
| CN202583362U (en) * | 2012-05-17 | 2012-12-05 | 复旦大学 | Experimental device for IGBT short circuit protection function detection |
| CN103247555A (en) * | 2012-02-08 | 2013-08-14 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Transistor) encapsulating tray and IGBT module encapsulating method |
| JP2014029285A (en) * | 2012-07-31 | 2014-02-13 | Fujitsu Semiconductor Ltd | Temperature regulator, temperature adjustment method, manufacturing method of electronic apparatus, and temperature adjustment program |
| CN104155587A (en) * | 2014-07-18 | 2014-11-19 | 浙江大学 | System and method for on-line detection of operating junction temperature of IGBT module |
| CN204116544U (en) * | 2014-08-29 | 2015-01-21 | 辽宁荣信电气传动技术有限责任公司 | A kind of dipulse proving installation for half-bridge IGBT module |
| CN104458799A (en) * | 2014-11-27 | 2015-03-25 | 天津大学 | Method and device for measuring transient thermal resistance of IGBT module |
| CN104952813A (en) * | 2015-07-01 | 2015-09-30 | 西安永电电气有限责任公司 | Heating plate and soldering method of IGBT (insulated gate bipolar transistor) module |
| CN105510792A (en) * | 2015-12-08 | 2016-04-20 | 同济大学 | Current transformer IGBT power module field double-pulse testing system and method |
-
2017
- 2017-10-19 CN CN201710977042.4A patent/CN109696612B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020050834A1 (en) * | 2000-07-10 | 2002-05-02 | Olsen Douglas S. | Apparatus and method for controlling temperature in a device under test using integrated temperature sensitive diode |
| CN103247555A (en) * | 2012-02-08 | 2013-08-14 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Transistor) encapsulating tray and IGBT module encapsulating method |
| CN202583362U (en) * | 2012-05-17 | 2012-12-05 | 复旦大学 | Experimental device for IGBT short circuit protection function detection |
| JP2014029285A (en) * | 2012-07-31 | 2014-02-13 | Fujitsu Semiconductor Ltd | Temperature regulator, temperature adjustment method, manufacturing method of electronic apparatus, and temperature adjustment program |
| CN104155587A (en) * | 2014-07-18 | 2014-11-19 | 浙江大学 | System and method for on-line detection of operating junction temperature of IGBT module |
| CN204116544U (en) * | 2014-08-29 | 2015-01-21 | 辽宁荣信电气传动技术有限责任公司 | A kind of dipulse proving installation for half-bridge IGBT module |
| CN104458799A (en) * | 2014-11-27 | 2015-03-25 | 天津大学 | Method and device for measuring transient thermal resistance of IGBT module |
| CN104952813A (en) * | 2015-07-01 | 2015-09-30 | 西安永电电气有限责任公司 | Heating plate and soldering method of IGBT (insulated gate bipolar transistor) module |
| CN105510792A (en) * | 2015-12-08 | 2016-04-20 | 同济大学 | Current transformer IGBT power module field double-pulse testing system and method |
Non-Patent Citations (2)
| Title |
|---|
| 佚名: "改进温度测试台设计方案", 《豆丁网，网址：JZ.DOCIN.COM/P-1482536927.HTML》 * |
| 蒋玉想 等: "基于双脉冲的IGBT及驱动电路测试方法", 《电子测量技术》 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426620A (en) * | 2019-09-03 | 2019-11-08 | 广东电网有限责任公司 | A kind of compression joint type IGBT module test macro and test method |
| CN111007381B (en) * | 2019-12-27 | 2022-03-29 | 东风航盛（武汉）汽车控制系统有限公司 | IGBT thermal state on-load voltage stress test system and method thereof |
| CN111007381A (en) * | 2019-12-27 | 2020-04-14 | 东风航盛（武汉）汽车控制系统有限公司 | IGBT thermal state on-load voltage stress test system and method thereof |
| CN111398770A (en) * | 2020-04-14 | 2020-07-10 | 西安易恩电气科技有限公司 | Power semiconductor device testing tool with protection structure |
| CN111398771A (en) * | 2020-04-14 | 2020-07-10 | 西安易恩电气科技有限公司 | Push-pull power semiconductor device test fixture |
| CN111398769A (en) * | 2020-04-14 | 2020-07-10 | 西安易恩电气科技有限公司 | High-temperature test tool for power semiconductor device |
| CN112327126A (en) * | 2020-10-28 | 2021-02-05 | 广州汽车集团股份有限公司 | IGBT module performance test system and method |
| CN112595523A (en) * | 2020-11-23 | 2021-04-02 | 一汽解放汽车有限公司 | PVT test system |
| CN113608092A (en) * | 2021-06-28 | 2021-11-05 | 臻驱科技（上海）有限公司 | Double-pulse test system |
| CN114325062A (en) * | 2022-03-10 | 2022-04-12 | 杭州飞仕得科技有限公司 | Current testing method of power module |
| CN114325062B (en) * | 2022-03-10 | 2022-06-10 | 杭州飞仕得科技有限公司 | Current testing method of power module |
| CN115656770A (en) * | 2022-10-19 | 2023-01-31 | 杭州国磊半导体设备有限公司 | Method and device for testing power driving chip, computer equipment and storage medium |
| CN115656770B (en) * | 2022-10-19 | 2023-09-01 | 杭州国磊半导体设备有限公司 | Power supply driving chip testing method and device, computer equipment and storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109696612B (en) | 2020-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109696612A (en) | The dipulse test macro and test method of automobile IGBT module | |
| US9435850B2 (en) | Apparatus and method for power cycle test | |
| Wu et al. | A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations | |
| CN103162856B (en) | A kind of contactless great power LED method for testing junction temperature | |
| CN102950993B (en) | Electric heater apparatus for electric vehicle and method of controlling the same | |
| CN102635990B (en) | Refrigerating output control device and test device and control method using the refrigerating output control device | |
| CN103605072B (en) | A kind of power device dynamic characteristic test circuit with thermoelectricity decoupling function and method of testing thereof | |
| CN103782143A (en) | Method and apparatus for estimating temperature of semiconductor chip | |
| CN108598524A (en) | Fuel battery cooling system and its temprature control method | |
| CN107655959A (en) | A kind of controllable thermoelectrochemistry battery testing platform of electrode temperature and its method | |
| CN107701288A (en) | A kind of temperature control system and method | |
| CN109164370A (en) | The thermal impedance measuring system and method for power semiconductor | |
| Wang et al. | Analysis, design, and implementation of junction temperature fluctuation tracking suppression strategy for SiC MOSFETs in wireless high-power transfer | |
| CN103575426A (en) | Calibration method of water temperature sensor | |
| CN208156522U (en) | A kind of high-low temperature test chamber based on semiconductor refrigerating | |
| Abbaspour | A practical approach to powering wireless sensor nodes by harvesting energy from heat flow in room temperature | |
| CN108226733A (en) | A kind of combined power cycle detector and its detection method for IGBT module | |
| CN207366504U (en) | A kind of controllable thermoelectrochemistry battery testing platform of electrode temperature | |
| CN111799530A (en) | Heater power closed-loop control system and power closed-loop control method | |
| Maganga et al. | Hardware implementation of maximum power point tracking for thermoelectric generators | |
| CN107914541A (en) | Integrated control method and system for the motor of electric vehicle | |
| CN114720835A (en) | Power cycle main circuit for GaN power device | |
| CN110534828A (en) | Power battery active heat preserving method, device and the electric car of electric car | |
| CN206317704U (en) | A kind of cooling energy-saving control system of electric automobile power battery | |
| CN202573915U (en) | Vehicular portable high-precision intelligent thermostatic case |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240109 Address after: 412005, No. 255 Tongxia Road, Tongtangwan Street, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Hunan CRRC Times Electric Drive Technology Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |