CN111007381A - IGBT thermal state on-load voltage stress test system and method thereof - Google Patents
IGBT thermal state on-load voltage stress test system and method thereof Download PDFInfo
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- CN111007381A CN111007381A CN201911382281.0A CN201911382281A CN111007381A CN 111007381 A CN111007381 A CN 111007381A CN 201911382281 A CN201911382281 A CN 201911382281A CN 111007381 A CN111007381 A CN 111007381A
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- 239000000523 sample Substances 0.000 claims description 7
- 238000009662 stress testing Methods 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 6
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof
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Abstract
The invention provides a voltage stress test system of an IGBT (insulated gate bipolar transistor) thermal state load, which is characterized by comprising a test computer, a motor controller, an electric dynamometer and a power analyzer, wherein the IGBT to be tested is arranged in the motor controller, the output end of the IGBT is electrically connected with the input end of the motor, the power analyzer is used for detecting the power of the motor and the controller and feeding back the power information of the motor to the test computer, and the electric dynamometer is used for detecting the real-time rotating speed and torque of the motor and feeding back the rotating speed and torque information of the motor to the test computer; the testing computer generates a control command according to the state information of the motor and outputs the control command to the motor controller, and the motor controller drives the motor to operate according to the specified rotating speed and torque according to the control command. The invention aims to provide a voltage stress test system and a voltage stress test method for IGBT thermal state loading, which aim to overcome the defects of the prior art and fully consider the influences of system factors such as temperature, motor load and the like on a control board, a drive board and an IGBT.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a voltage stress testing system and method for IGBT thermal state loading.
Background
The voltage stress of the IGBT is influenced by stray inductance, temperature and the like of a circuit loop, if the voltage stress exceeds the collector-emitter withstand voltage value of the IGBT in the IGBT turn-off process, the IGBT can generate Vce overvoltage failure, and further a Motor Controller (MCU) is caused to break down, and a vehicle can not run. At present, most of voltage stress investigation of the IGBT mainly comprises the steps of carrying out a double-pulse short-circuit experiment on the IGBT module, welding or crimping a driving plate on the IGBT, and carrying out a double-pulse short-circuit test on the signal generator or a control plate with related software. This is only a single-board level hardware test performed at ambient temperature, and does not consider the influence of system factors such as temperature and motor load on the control board, the drive board, and the IGBT.
Disclosure of Invention
The invention aims to provide a voltage stress test system and a voltage stress test method for IGBT thermal state loading, which aim to overcome the defects of the prior art and fully consider the influences of system factors such as temperature, motor load and the like on a control board, a drive board and an IGBT.
The invention provides a voltage stress test system of an IGBT (insulated gate bipolar transistor) thermal state load, which is characterized by comprising a test computer, a motor controller, an electric dynamometer and a power analyzer, wherein the IGBT to be tested is arranged in the motor controller, the output end of the IGBT is electrically connected with the input end of the motor, the power analyzer is used for detecting the power of the motor and the power of the controller and feeding back the power information of the motor and the controller to the test computer, and the electric dynamometer is used for detecting the real-time rotating speed and torque of the motor and feeding back the rotating speed and torque information of the motor to the test computer; the testing computer generates a control command according to the state information of the motor and outputs the control command to the motor controller, and the motor controller drives the motor to operate according to the specified rotating speed and torque according to the control command.
In the above technical scheme, the motor control system further comprises a water circulation system arranged around the motor controller and the motor and used for keeping the motor controller and the motor in a specified constant temperature environment.
In the technical scheme, the electric dynamometer and the motor controller jointly act to control the motor to operate at the specified rotating speed.
The test method of the IGBT hot-state on-load voltage stress test system is characterized by comprising the following steps of:
a. installing a relay and welding pins; setting the normal and short-circuit conditions of the IGBT according to the test requirements;
b. setting the water temperature of a water circulation system to be a designated temperature, and setting the highest working voltage of a motor controller by a high-voltage power supply;
c. the electric dynamometer operates according to a rotating speed mode, and a rated rotating speed is given firstly; the testing computer outputs a torque control command to the motor controller, the motor controller controls the motor to operate in a torque mode, the motor operates according to rated torque, and the motor and the electric dynamometer are connected through a bearing and operate under a rated working condition until the IGBT wafer is in a thermal steady state;
d, after the IGBT wafer reaches a thermal steady state, the testing computer outputs a control command to the motor controller, and the motor controller and the electronic dynamometer are matched to control the motor to operate at a specified rotating speed and a specified torque;
e. testing the voltage stress of the specified bridge arm without using a relay short circuit or using the relay short circuit specified bridge arm or specified phase;
f. and repeating the steps b-e, and carrying out short circuit tests on other bridge arms.
According to the technical scheme, the test pins are welded on the specified bridge arms, the voltage stress is measured through the oscilloscope, and the waveform is recorded.
In the technical scheme, in the step a, test pins are respectively welded at the two ends of an upper bridge and a lower bridge of 6 bridge arms of the IGBT; short-circuit is carried out on 6 bridge arms of the IGBT to be tested by using a thick and short power line and a relay, and the relay is not attracted at the moment; short circuit is carried out between an upper bridge and a lower bridge of each two phase bridge arms of the IGBT to be tested by using a thick and short power line and a relay, and the relay is not attracted;
in the technical scheme, no relay is used for short-circuiting any bridge arm in the step d; the motor dynamometer gives a motor to operate at a test rotating speed, a motor controller outputs the maximum torque at the rotating speed to the motor, the maximum voltage stress of a specified bridge arm at the rotating speed point is found in an oscilloscope trigger mode, and data are recorded.
In the above technical scheme, in the step a, the voltage stress of the specified bridge arm and the in-phase bridge arm thereof is respectively tested by using a differential probe, and the short-circuit current is tested by using a current gun; and d, in the step d, closing the relay to short-circuit the specified bridge arm, and measuring the voltage stress of the specified bridge arm by using an oscilloscope.
In the above technical scheme, in the step a, the voltage stress of the specified two-phase upper bridge and the specified two-phase lower bridge are respectively tested by using a differential probe, and the short-circuit current is tested by using a current gun; and d, in the step d, closing the relay to short-circuit the specified two phases, and measuring the voltage stress of the upper and lower bridge arms of the specified two phases by using the oscilloscope.
The invention provides a voltage stress testing method for IGBT thermal state loading, which can measure the voltage stress of an IGBT driving module from a more real angle, considers the voltage stress condition of the IGBT in the actual normal and short-circuit process of the thermal state loading and observes whether the IGBT is switched on and off and has improper oscillation.
Drawings
FIG. 1 is a schematic diagram of the system of the present invention
FIG. 2 is a basic voltage stress test block diagram under normal conditions of the present invention;
fig. 3 is a basic block diagram of voltage stress testing in a short circuit condition.
Detailed Description
The invention will be further described in detail with reference to the following drawings and specific examples, which are not intended to limit the invention, but are for clear understanding.
As shown in fig. 1, the invention provides a voltage stress test system for an IGBT in a hot state, which is characterized by comprising a test computer, a motor controller, an electric dynamometer and a power analyzer, wherein the IGBT to be tested is arranged in the motor controller, an output end of the IGBT is electrically connected with an input end of the motor, the power analyzer is used for detecting the power of the motor and feeding back power information of the motor to the test computer, and the electric dynamometer is used for detecting the real-time rotating speed and torque of the motor and feeding back the rotating speed and torque information of the motor to the test computer; the testing computer generates a control command according to the state information of the motor and outputs the control command to the motor controller, and the motor controller drives the motor to operate according to the specified rotating speed and torque according to the control command. The test computer communicates with the motor controller MCU through the PCAN and sends a control instruction. The electric dynamometer is connected with the power analyzer through a network cable and a test computer on the rack. The invention also comprises a water circulation system which is arranged around the motor controller and the motor and is used for keeping the motor controller and the motor in the specified constant temperature environment. The electric dynamometer and the motor controller work together to control the motor to operate at a specified rotating speed. In the test process, the electric dynamometer runs in a rotating speed mode, and the MCU controls a motor running torque mode. In the figure, the output of the MCU to the motor line A represents three-phase current and U represents three-phase voltage. The electric dynamometer to the gantry N represents torque and N represents rotational speed.
When the IGBT is turned off, the phase current begins to drop, which may generate an induced voltage on the stray inductance in the loop, which is the same as the bus voltage Udc, and may increase a portion of the bus voltage, so that a peak voltage Us may appear in the waveform measured on the IGBT of the turn-off bridge arm at this time. Then the maximum collector-emitter voltage at this time is given by:
Uce,max＝Udc+Us＝Udc+Ls*(di/dt) (1)
equation (1) represents Uce, max represents the total Vce voltage spike, U represents the dc bus voltage, Us represents the voltage spike due to stray inductance, Ls represents stray inductance, and di/dt represents the current ramp down.
Fig. 2 is a basic block diagram of a voltage stress test under normal conditions, a schematic diagram of a voltage stress Vce of the a phase is drawn in fig. 2, and other bridge arms are similarly not drawn. The following is a specific method of voltage stress testing under normal conditions:
(1) welding test pins on Vce of six bridge arms of the IGBT to be tested;
(2) firstly, connecting a difference probe to Vce of an upper bridge arm and a lower bridge arm of an A phase;
(3) the highest working voltage of the motor controller is given by the high-voltage power supply, and the water temperature of the water circulation system is set to 65 ℃;
(4) the testing computer gives the rotating speed of the motor to the rated rotating speed through the electric dynamometer and the motor controller, the motor controller gives the torque of the motor to the rated torque, and the testing computer runs for 30min to enable the IGBT wafer to be in a thermal stable state;
(5) after 30min, the testing computer gives the rotating speed of the motor to a testing rotating speed point through the electric dynamometer and the motor controller, the motor controller gives the input torque of the motor to the maximum torque under the rotating speed, the maximum Vce of the A phase of the rotating speed point is found in an oscilloscope trigger mode, and data are recorded;
(6) and then testing the voltage stress of the upper and lower bridge arms Vce of the B phase and the C phase according to the same method, and recording the voltage stress in the table 1.
TABLE 1 Voltage stress test data sheet under Normal conditions
In the case of a short circuit, the controller reports an overcurrent fault or a desaturation fault, which is mainly determined by stray inductance in a short circuit loop. As shown in formula (2), if the inductance is large, the current in the loop rises slowly to reach the rated value of the IGBT of 1-1.5 times, an overcurrent fault is reported, and a saturation fault is possibly reported, wherein the overcurrent fault is mainly collected by a current sensor and depends on overcurrent protection; if the sensing quantity is small, the current in the loop rises quickly and reaches 3-4 times of the rated value of the IGBT, the saturation fault is relieved, and the sampling speed of the current sensor cannot keep up with the sampling speed.
di/dt＝U/L (2)
In the formula (2), di/dt represents the rising slope of the short-circuit current, U represents the direct-current bus voltage, and L represents the inductance of the short-circuit loop.
As shown in fig. 3, which is a basic voltage stress test block diagram under a short circuit condition, SC1 represents a short circuit, the upper and lower bridge arms are straight, stray inductance in a short circuit loop is small, and if a short circuit occurs, a short circuit current is large. SC2 represents a class two short circuit, interphase short circuit, in which the stray inductance is large and, if a short circuit occurs, the short circuit current is not too large relative to SC 1. Two types of short-circuit tests are carried out in the experiment, and whether the voltage stress of the IGBT under the short-circuit condition exceeds the IGBT collector-emitter voltage resistance value under the model selection condition is checked.
The following is a specific method for testing voltage stress under the condition of short circuit:
(1) the method comprises the following steps that a thick and short power line and a relay are used at a controller end to carry out short circuit on an A phase upper bridge of an IGBT to be tested, and the relay is not attracted;
(2) welding a test pin on the A phase Vce;
(3) respectively testing an A-phase upper bridge Vce and an A-phase lower bridge Vce by using a differential probe, and testing short-circuit current by using a current gun; the oscilloscope trigger takes short-circuit current as a trigger source and can be set to be about 1500A.
(4) The water temperature through the water circulation system is set to 65 ℃, and the highest working voltage of the project is given by the high-voltage power supply;
(5) the testing computer gives the rotating speed of the motor to the rated rotating speed through the electric dynamometer and the motor controller, the motor controller gives the torque of the motor to the rated torque, and the testing computer runs for 30min to enable the IGBT wafer to be in a thermal stable state;
(6) after 30min operation, the test computer sets the rotating speed of the motor to 500rpm through the electric dynamometer, sets the torque of the motor to 50Nm through the motor controller, uses a relay to short-circuit an A-phase upper bridge, and records the waveform on the oscilloscope and the Vce of an A-phase upper bridge arm;
(7) subsequently, the test computer increases the rotating speed and the torque through the electric dynamometer and the motor controller to test;
(8) in the same way, five other bridge arm short circuit tests were performed and the maximum values measured are recorded in table 2.
TABLE 2 Voltage stress test data sheet under short-circuit condition
The following is a specific method for voltage stress testing under two types of short circuits:
(1) a thick and short power line and a relay are used at the controller end to carry out short circuit on the controller AB phase, and the relay is not attracted at the moment; of IGBTs to be tested
(2) Then, welding test pins on the A phase and the B phase Vce;
(3) because the oscilloscope only has four ports, three differential probes are used for respectively testing an A-phase upper bridge and a B-phase lower bridge Vce, and one current gun is used for testing short-circuit current; the oscilloscope trigger takes short-circuit current as a trigger source and can be set to be about 1500A.
(4) Setting the water temperature of the water circulation system to 65 ℃, and giving the highest working voltage of the project to the high-voltage power supply;
(5) the testing computer gives the rotating speed of the motor to the rated rotating speed through the electric dynamometer and the motor controller, the motor controller gives the torque of the motor to the rated torque, and the testing computer runs for 30min to enable the IGBT wafer to be in a thermal stable state;
(6) after 30min operation, the test computer sets the rotating speed of the motor to 500rpm through the electric dynamometer, sets the torque of the motor to 50Nm through the motor controller, uses a relay to short-circuit an AB phase, and records the waveform on the oscilloscope and an A-phase upper and lower bridge Vce and a B-phase upper and lower bridge Vce;
(7) subsequently, the test computer increases the rotating speed and the torque through the electric dynamometer and the motor controller to test;
(8) AC phase and BC phase short circuit tests were performed in the same manner.
The short circuit test is respectively carried out on the AB phase, the AC phase and the BC phase, the maximum values of the A-phase upper and lower bridges Vce, the B-phase upper and lower bridges Vce and the C-phase upper and lower bridges Vce are recorded in the following table according to the results obtained by an oscilloscope.
TABLE 3 Voltage stress test data sheet under class II short circuit condition
Details not described in this specification are within the skill of the art that are well known to those skilled in the art.
Claims (9)
1. The IGBT thermal state loaded voltage stress test system is characterized by comprising a test computer, a motor controller, an electric dynamometer and a power analyzer, wherein the IGBT to be tested is arranged in the motor controller, the output end of the IGBT is electrically connected with the input end of the motor, the power analyzer is used for detecting the power of the motor and the power of the controller and feeding back the power information of the motor and the controller to the test computer, and the electric dynamometer is used for detecting the real-time rotating speed and torque of the motor and feeding back the rotating speed and torque information of the motor to the test computer; the testing computer generates a control command according to the state information of the motor and outputs the control command to the motor controller, and the motor controller drives the motor to operate according to the specified rotating speed and torque according to the control command.
2. The IGBT hot on-load voltage stress testing system of claim 1, further comprising a water circulation system disposed around the motor controller and the motor for maintaining a specified constant temperature environment in which the motor controller and the motor are located.
3. The IGBT hot on-load voltage stress testing system of claim 1, wherein the electric dynamometer and the motor controller cooperate to control the motor to operate at a specified speed.
4. The test method of the IGBT hot-state loaded voltage stress test system according to claim 2, characterized by comprising the following steps:
a. installing a relay and welding pins; setting the normal and short-circuit conditions of the IGBT according to the test requirements;
b. setting the water temperature of a water circulation system to be a designated temperature, and setting the highest working voltage of a motor controller by a high-voltage power supply;
c. the electric dynamometer operates according to a rotating speed mode, and a rated rotating speed is given firstly; the testing computer outputs a torque control command to the motor controller, the motor controller controls the motor to operate in a torque mode, the motor operates according to rated torque, and the motor and the electric dynamometer are connected through a bearing and operate under a rated working condition until the IGBT wafer is in a thermal steady state;
d, after the IGBT wafer reaches a thermal steady state, the testing computer outputs a control command to the motor controller, and the motor controller and the electric dynamometer cooperate to control the motor to operate at a specified rotating speed and a specified torque;
e. testing the voltage stress of the specified bridge arm without using a relay short circuit or using the relay short circuit specified bridge arm or specified phase;
f. and repeating the steps b-e, and carrying out short circuit tests on other bridge arms.
5. The test method of the IGBT hot-state on-load voltage stress test system according to claim 4, characterized in that a test pin is welded on a designated bridge arm, voltage stress is measured by an oscilloscope, and waveforms are recorded.
6. The test method of the IGBT hot-state on-load voltage stress test system according to claim 4, characterized in that in the step a, test pins are respectively welded at the two ends of the upper bridge and the lower bridge of 6 bridge arms of the IGBT; short-circuit is carried out on 6 bridge arms of the IGBT to be tested by using a thick and short power line and a relay, and the relay is not attracted at the moment; and short circuit is carried out between the upper bridge and the lower bridge of every two phase bridge arms of the IGBT to be tested by using the thick and short power lines and the relay, and the relay is not attracted at the moment.
7. The test method of the IGBT thermal state on-load voltage stress test system according to claim 6, characterized in that no relay is used to short-circuit any bridge arm in step d; the motor dynamometer gives a motor to operate at a test rotating speed, a motor controller outputs the maximum torque at the rotating speed to the motor, the maximum voltage stress of a specified bridge arm at the rotating speed point is found in an oscilloscope trigger mode, and data are recorded.
8. The test method of the IGBT hot-state on-load voltage stress test system according to claim 6, characterized in that in the step a, the voltage stress of a specified bridge arm and a non-inverting bridge arm thereof is respectively tested by using a differential probe, and the short-circuit current is tested by using a current gun; and d, in the step d, closing the relay to short-circuit the specified bridge arm, and measuring the voltage stress of the specified bridge arm by using an oscilloscope.
9. The test method of the voltage stress test system of the IGBT hot-state loading according to claim 6, characterized in that in the step a, the voltage stress of the specified two-phase upper bridge and the lower bridge is respectively tested by using a differential probe, and the short-circuit current is tested by using a current gun; and d, in the step d, closing the relay to short-circuit the specified two phases, and measuring the voltage stress of the upper and lower bridge arms of the specified two phases by using the oscilloscope.
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