CN115267466A - Test system for characteristic research of gallium nitride power device under dynamic working condition - Google Patents
Test system for characteristic research of gallium nitride power device under dynamic working condition Download PDFInfo
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Abstract
The invention relates to a test system for characteristic research of a gallium nitride power device under dynamic working conditions, which is based on a comprehensive gallium nitride power device dynamic resistance research environment model and comprises temperature, DC-link voltage, current, frequency, a switching mode, a pulse mode and the like, and is used for researching the switching characteristic and the dynamic resistance characteristic of the gallium nitride power device, wherein a temperature control heating unit can realize the research of the tested gallium nitride power device under different temperature scenes; the adjustable DC-link voltage can realize different DC-link voltages in the environment model; the load unit can enable the tested gallium nitride power device to work in different current modes, switch modes and pulse modes; the adjustable PWM signal provides switching instructions with different frequencies for the upper and lower switching tubes. The test system comprises comprehensive variables in a dynamic resistance research environment model of the gallium nitride power device, and can achieve the purpose of measuring and researching the dynamic working condition characteristics of the gallium nitride power device under different working condition factor combinations.
Description
Technical Field
The invention belongs to the technical field of testing of dynamic working condition characteristics of gallium nitride power devices, and particularly relates to a testing system for characteristic research of a gallium nitride power device under a dynamic working condition.
Background
Gallium nitride power devices are one of the best candidates for next generation high frequency, high efficiency and high power density converters due to their low on-resistance, low parasitic capacitance and zero reverse recovery charge. The gallium nitride power device has a larger difference from the traditional silicon power device in the aspects of material growth, device structure, process manufacturing flow and the like, and along with a brand new application scene of the gallium nitride power device with higher switching speed, higher power and higher frequency, the device shows brand new dynamic working condition characteristics different from those of the silicon power device under actual dynamic working conditions. Although the development of the gan power device has made some progress in recent years, a crucial problem to be solved by the wide application of the gan power device is the dynamic resistance (Rds, on) degradation caused by the current collapse effect in the application, which not only causes extra energy loss of the power system, but also brings serious hidden trouble to the reliability of the device and even the power system. Based on the fact that the traditional silicon power device double-pulse testing research method cannot meet the measurement research of key characteristic parameters such as dynamic resistance and the like under the dynamic working condition of the gallium nitride power device, a brand-new dynamic characteristic testing technology of the gallium nitride power device and a corresponding characterization method thereof become important forces for promoting the optimization design iteration of the gallium nitride power device and the rapid development of a new-generation energy system based on the gallium nitride power device.
At present, a gallium nitride power device manual only reports the static resistance (Ron) condition of the device, the static resistance is obtained by measurement under a direct current condition and a relatively low source-drain voltage Vds, the dynamic resistance characteristic of an actual gallium nitride power device is a variable determined by the influence of comprehensive environmental factors such as temperature, DC-link voltage, current, frequency, a switching mode and a pulse mode in the working condition of the power source, the improvement of the dynamic characteristic of a gallium nitride power device product and the dynamic resistance characteristic which has practical reference significance based on the power source design of the gallium nitride power device are not reported in the device manual, and the actual conduction loss corresponding to the dynamic resistance change of the gallium nitride power device under the practical working condition (including temperature, DC-link voltage, current, frequency, a switching mode, a pulse mode and the like) is not well described.
At present, the measurement methods of dynamic resistance of gallium nitride power devices at home and abroad under different working conditions are roughly divided into two types: the first type is a single pulse test or a double pulse test based on an on-wafer stage of a power element analyzer such as an Agilent B1505A. Due to the limitation of the measuring instruments, the method cannot evaluate the dynamic resistance characteristic of the gallium nitride power device under the working conditions of the practical power supply with large current and large voltage at the same time. The second type is that at normal temperature, a circuit-level double-pulse test method is utilized to research the dynamic resistance characteristics of the gallium nitride power device at different temperatures, and the proportion of the power system loss caused by the dynamic resistance change in a corresponding power and frequency power system in the total loss is estimated according to the dynamic resistance characteristics.
However, research proves that the dynamic resistance characteristic of the gallium nitride power device is influenced by comprehensive environmental factors such as temperature, DC-link voltage, current, frequency, switching mode and pulse mode in the working condition of an actual power supply, and a traditional single-pulse test method or double-pulse test method based on single voltage or current stress of an on-wafer level of a power element analyzer such as Agilent B1505A and the like and a traditional double-pulse test method of a circuit level are not enough to evaluate the change condition of the dynamic resistance of the gallium nitride power device in the application of the working condition of the actual power supply (comprising temperature, DC-link voltage, current, frequency, switching mode, pulse mode and the like).
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a test system for characteristic research of a gallium nitride power device under a dynamic working condition. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a test system for characteristic research of a gallium nitride power device under dynamic working conditions, which comprises: a performance evaluation daughter board and a performance evaluation mother board, wherein,
the performance evaluation motherboard comprises a plurality of access ports and a plurality of control modules, wherein the access ports are used for receiving input PWM signals, DC-link voltage and driving voltage, and both the PWM signals and the DC-link voltage can be regulated; the performance evaluation daughter board is plugged with the performance evaluation mother board to obtain the PWM signal, the DC-link voltage and the driving voltage;
the performance evaluation daughter board is provided with a test circuit module, the test circuit module comprises an upper switch tube driving unit, an upper switch tube, a lower switch tube driving unit, a lower switch tube, a temperature control heating unit, a load unit and a plurality of measurement ports, wherein,
the lower switching tube is a tested gallium nitride power device; the upper switching tube and the lower switching tube are connected to form a half-bridge circuit; the DC-link voltage provides working voltage required by the half-bridge circuit;
the upper switching tube driving unit is connected with the upper switching tube and controls the upper switching tube to be turned on or turned off according to the PWM signal; the lower switching tube driving unit is connected with the lower switching tube and controls the lower switching tube to be turned on or turned off according to the PWM signal;
the load unit is connected with the upper switch tube; the temperature control heating unit is attached to the lower switch tube;
different test condition combinations are obtained by adjusting the temperature control heating unit, the load unit, the PWM signal and the DC-link voltage, and the electrical characteristic parameter measurement of the tested gallium nitride power device under different test condition combinations is realized by utilizing the plurality of measurement ports.
In one embodiment of the invention, the upper switch tube driving unit comprises a power supply DC/DC circuit and an upper switch tube driving circuit of the upper switch tube driving unit which are connected, wherein,
a power supply DC/DC circuit of the upper switching tube driving unit provides working voltage of the upper switching tube driving circuit;
the upper switch tube driving circuit is connected with the upper switch tube and controls the upper switch tube to be turned on and off according to the PWM signal of the upper switch tube.
In one embodiment of the invention, the lower switching tube driving unit comprises a power supply DC/DC circuit of the lower switching tube driving unit and a lower switching tube driving circuit connected, wherein,
a power supply DC/DC circuit of the lower switching tube driving unit provides working voltage of the lower switching tube driving circuit;
the lower switching tube driving circuit is connected with the lower switching tube and controls the lower switching tube to be turned on and off according to a lower switching tube PWM signal.
In an embodiment of the invention, the temperature control voltage of the temperature control heating unit is the driving voltage, the temperature control heating unit is a heating resistor, and the test conditions of different temperatures are provided by adjusting the resistance value of the heating resistor.
In one embodiment of the invention, the load unit comprises a first load subunit and a second load subunit, wherein,
the first load subunit comprises a first inductor, and the first inductor is connected between the source electrode and the drain electrode of the upper switching tube;
the second load subunit comprises a second inductor, a first capacitor and a first resistor, wherein the first end of the second inductor is connected with the source electrode of the upper switch tube, and the first capacitor and the first resistor are connected in series between the second end of the second inductor and the drain electrode of the upper switch tube;
when the first load subunit is connected with the upper switching tube, test conditions of different load currents in a double-pulse mode are provided by adjusting the load of the first inductor;
when the second load subunit is connected with the upper switching tube, test conditions of different switching modes and different load current modes in a continuous flushing mode are provided by adjusting the loads of the second inductor and the first resistor.
In one embodiment of the present invention, the test circuit module further includes a second capacitor connected across the upper switch tube and the lower switch tube, and a voltage clamp circuit connected between the drain and the source of the lower switch tube.
In one embodiment of the invention, the test system further comprises an auxiliary low voltage power supply connected to a respective access port of the performance evaluation motherboard, the auxiliary low voltage power supply for providing the drive voltage.
In an embodiment of the invention, the test system further comprises an adjustable high voltage DC voltage source connected to a corresponding access port of the performance evaluation motherboard, the adjustable high voltage DC voltage source being configured to provide the adjustable DC-link voltage.
In an embodiment of the present invention, the test system further includes a digital signal processing control board, the digital signal processing control board is connected to the corresponding access port of the performance evaluation motherboard, and the digital signal processing control board is configured to provide the adjustable upper switching tube PWM signal and the adjustable lower switching tube PWM signal.
Compared with the prior art, the invention has the beneficial effects that:
1. the test system for characteristic research of the gallium nitride power device under the dynamic working condition is based on a comprehensive dynamic resistance research environment model of the gallium nitride power device, wherein the temperature control heating unit can realize the investigation of the tested gallium nitride power device under different temperature scenes; the adjustable DC-link voltage can realize different DC-link voltages in the environment model; the load unit can enable the tested gallium nitride power device to work under different current, switching modes and pulse modes; the adjustable PWM signal provides switching instructions of switching tubes with different frequencies; the test system comprises comprehensive gallium nitride power device dynamic resistance research environment model variables, and can measure and research the characteristics of the gallium nitride power device under dynamic working conditions under different working condition factor combinations.
2. The test system for characteristic research of the gallium nitride power device under the dynamic working condition can provide important reference for actual device loss calculation in the actual power supply application based on the gallium nitride power device. The environmental influence factors are flexible and adjustable, and corresponding environmental factor combinations can be respectively designed according to different research and test purposes, so that the switch characteristics and the dynamic resistance characteristics of the tested gallium nitride power device under different dynamic working conditions can be specifically researched.
3. The test system for characteristic research of the gallium nitride power device under the dynamic working condition can be flexibly expanded to the field of thermoelectric comprehensive characteristic research beyond the electrical characteristics of the gallium nitride power device. The DSP control board in the test system can be triggered by Logic gate level signals (TTL) of other test systems, and test trigger signals of different test systems are synchronized, so that the application of synchronously researching the thermoelectric property of the gallium nitride power device under dynamic working conditions is expanded.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic diagram of a comprehensive environment model for studying the dynamic resistance of a gan power device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a test system for characteristic study of a gallium nitride power device under dynamic conditions according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a performance evaluation motherboard according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a performance evaluation daughter board according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a circuit connection for a double pulse and continuous pulse mode according to an embodiment of the present invention;
fig. 6 is a test schematic diagram of a test system for characteristic study of a gallium nitride power device under dynamic conditions according to an embodiment of the present invention.
Detailed Description
In order to further explain the technical means and effects of the present invention adopted to achieve the predetermined object, the following describes in detail a test system for characteristic study under dynamic conditions of a gallium nitride power device according to the present invention with reference to the accompanying drawings and the detailed description.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. While the present invention has been described in connection with the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Example one
The embodiment provides a test system for characteristic research of a gallium nitride power device under a dynamic working condition, wherein the dynamic resistance characteristic of an actual gallium nitride power device is a variable determined by the influence of comprehensive environmental factors such as temperature, DC-link voltage, current, frequency, a switching mode and a pulse mode in the working condition of a power source, the test system of the embodiment is based on a comprehensive gallium nitride power device dynamic resistance research environment model, such as the comprehensive gallium nitride power device dynamic resistance research environment model schematic diagram shown in fig. 1, and the environment model comprises temperature, DC-link voltage, current, frequency, a switching mode, a pulse mode and the like.
Referring to fig. 2 to fig. 4 in combination, fig. 2 is a schematic structural diagram of a test system for characteristic study of a gallium nitride power device under dynamic conditions according to an embodiment of the present invention; fig. 3 is a schematic structural diagram of a performance evaluation motherboard according to an embodiment of the present invention; fig. 4 is a schematic structural diagram of a performance evaluation daughter board according to an embodiment of the present invention. As shown in the figure, the test system for characteristic study of the gan power device under dynamic conditions in this embodiment includes a performance evaluation daughter board 100 and a performance evaluation mother board 200, where the performance evaluation mother board 200 includes several access ports (not shown in the figure) for receiving an input PWM signal, a DC-link voltage and a driving voltage, where both the PWM signal and the DC-link voltage can be adjusted. The performance evaluation daughter board 100 is plugged with the performance evaluation mother board 200 to acquire a PWM signal, a DC-link voltage, and a driving voltage.
Further, the performance evaluation daughter board 100 is provided with a test circuit module, and the test circuit module includes an upper switch tube driving unit 310, an upper switch tube 320, a lower switch tube driving unit 330, a lower switch tube 340, a temperature control heating unit 350, a load unit 360, and a plurality of measurement ports (not shown in the figure).
Wherein, the lower switch tube 340 is a gallium nitride power device to be tested; the upper switch tube 320 and the lower switch tube 340 are connected to form a half-bridge circuit; the DC-link voltage provides the required operating voltage for the half bridge circuit.
It should be noted that the basic circuit of the test circuit module of this embodiment is a half-bridge circuit composed of the upper switch tube 320, the lower switch tube 340 and the load unit 360. If the upper switch tube 320 is replaced by a diode, the system can also be used for researching the dynamic working condition characteristics of the upper switch tube 320, and the conducting current of the upper switch tube 320 can be measured by adopting a current sensor and a current probe based on a ferrite core.
Further, the upper switching tube driving unit 310 is connected to the upper switching tube 320, and the upper switching tube driving unit 310 controls the upper switching tube 320 to be turned on or off according to the corresponding PWM signal; the lower switching tube driving unit 330 is connected to the lower switching tube 340, and the lower switching tube driving unit 340 controls the lower switching tube 340 to be turned on and off according to the corresponding PWM signal. The load unit 360 is connected with the upper switch tube 320; the temperature controlled heating unit 350 is attached to the lower switching tube 340.
In this embodiment, different test condition combinations are obtained by adjusting the temperature control heating unit 350, the load unit 360, the PWM signal and the DC-link voltage, and the electrical characteristic parameter measurement of the gan power device under test under different test condition combinations is realized by using a plurality of measurement ports.
Further, the test principle of the test system is specifically described with reference to the specific structure of the test system in this embodiment.
As shown in fig. 3, in the schematic structural diagram of the performance evaluation motherboard, in this embodiment, a PWM signal access port, a DC-link voltage access port, a driving voltage access port, and a daughter board plug port are provided on the performance evaluation motherboard 200. The PWM signal access port comprises two PWM signal sub-ports, one PWM signal sub-port provides an upper switch tube PWM signal for the upper switch tube 320, the other PWM signal sub-port provides a lower switch tube PWM signal for the lower switch tube 340, the voltage input by the driving voltage access port is 5V voltage, and the daughter board plug-in port is used for connecting the performance evaluation daughter board with the performance evaluation mother board.
In this embodiment, the test system further comprises an auxiliary low voltage power supply 400, an adjustable high voltage dc voltage source 500 and a digital signal processing control board 600. The auxiliary low voltage power supply 400 is connected to a corresponding access port (driving voltage access port) of the performance evaluation motherboard 200, and the auxiliary low voltage power supply 400 is configured to provide a driving voltage, which is also used as a temperature control voltage of the temperature control heating unit 350, and the driving voltage is 5V.
The adjustable high-voltage direct-current voltage source 500 is connected with a corresponding access port (DC-link voltage access port) of the performance evaluation motherboard 200, and the adjustable high-voltage direct-current voltage source 500 is used for providing an adjustable DC-link voltage.
The digital signal processing control board 600 is connected to corresponding access ports (two PWM signal sub-ports) of the performance evaluation motherboard 200, and the digital signal processing control board 600 is configured to provide adjustable upper and lower switch tube PWM signals. Optionally, the digital signal processing control board 600 employs a DSP control board of model TI TMS320F28379D to provide programmable PWM signals for the circuit under test.
Further, as shown in the structural schematic diagram of the performance evaluation daughter board shown in fig. 4, in this embodiment, the upper switch tube driving unit 310 includes a power supply DC/DC circuit 311 and an upper switch tube driving circuit 312 of the upper switch tube driving unit, which are connected, where the power supply DC/DC circuit 311 of the upper switch tube driving unit provides the operating voltage of the upper switch tube driving circuit 312; the upper switch tube driving circuit 312 is connected to the upper switch tube 320, and the upper switch tube driving circuit 312 controls the upper switch tube 320 to be turned on or off according to the upper switch tube PWM signal.
Similarly to the upper switch tube driving unit 310, the lower switch tube driving unit 330 includes a power supply DC/DC circuit 331 of the lower switch tube driving unit and a lower switch tube driving circuit 332 connected, wherein the power supply DC/DC circuit 331 of the lower switch tube driving unit provides an operating voltage of the lower switch tube driving circuit 332; the lower switching tube driving circuit 332 is connected to the lower switching tube 340, and the lower switching tube driving circuit 332 controls the lower switching tube 340 to be turned on or off according to the lower switching tube PWM signal.
In this embodiment, corresponding PWM signals are obtained through programming, and switching instructions with different frequencies, double pulses or continuous pulses are provided for the upper switching tube 320 and the lower switching tube 340, so as to turn on and off the upper switching tube 320 and the lower switching tube 340.
Further, the temperature control voltage of the temperature control heating unit 350 is the driving voltage, the temperature control heating unit 350 is the heating resistor, and the test conditions of different temperatures are provided by adjusting the resistance value of the heating resistor.
It should be noted that, because the heating resistor of the temperature-controlled heating unit is closely attached to the measured gallium nitride power device, in this embodiment, a through hole is provided at a position of the performance evaluation daughter board in the vertical direction of the measured gallium nitride power device, so that the real-time temperature of the measured gallium nitride power device can be conveniently examined from the back of the performance evaluation daughter board through the through hole.
Further, the load unit 360 includes a first load subunit 361 and a second load subunit 362. Fig. 5 shows a schematic circuit connection diagram of the double pulse mode and the continuous pulse mode, in which fig. 5a is a schematic circuit connection diagram of the double pulse mode, and fig. b is a schematic circuit connection diagram of the continuous pulse mode. Specifically, the first load subunit 361 includes a first inductor L1, and the first inductor L1 is connected between the source and the drain of the upper switch 320. The second load subunit 362 includes a second inductor L2, a first capacitor C1, and a first resistor R1, wherein a first end of the second inductor L2 is connected to the source of the upper switch tube 320, the first capacitor C1 and the first resistor R1 are connected in series between a second end of the second inductor L2 and the drain of the upper switch tube 320, that is, the first end of the first capacitor C1 is connected to the drain of the upper switch tube 320, the second end is connected to the second end of the second inductor L2, and the first resistor R1 is connected in parallel to the first capacitor C1.
In the present embodiment, the first capacitor C1 is used as a decoupling capacitor to effectively alleviate the oscillation affecting the measurement caused by the inevitable parasitic parameters in the circuit.
In this embodiment, when the first load subunit 361 is connected to the upper switch tube 320, the load of the first inductor L1 is adjusted to provide test conditions of different load currents in the double-pulse mode; when the second load subunit 362 is connected to the upper switch tube 320, the load of the second inductor L2 and the first resistor R1 is adjusted to provide test conditions of different switch modes and different load currents in the continuous pulse mode.
Further, the test circuit module further includes a second capacitor C2 and a voltage clamp circuit, wherein the second capacitor C2 is connected across the upper switch tube 320 and the lower switch tube 340, and specifically, the second capacitor C2 is connected across the drain of the upper switch tube 320 and the source of the lower switch tube 340. The voltage clamp circuit is connected between the drain and source of the lower switching tube 340.
In this embodiment, the test circuit module further includes a third capacitor C3, and the third capacitor C3 is connected between the second capacitor C2 and the ground GND, and is used as a decoupling capacitor of the circuit.
In the present embodiment, the performance evaluation daughter board 100 is provided with a measurement port for measuring the gate-source voltage and the source-drain voltage of the upper switch tube 320, a measurement port for measuring the gate-source voltage, the source-drain voltage and the drain current of the lower switch tube 340, a measurement port for measuring the on-state voltage of the lower switch tube 340, and a current sensor disposed between the source of the lower switch tube 340 and the signal GND, the current sensor is used for measuring the on-state current of the lower switch tube 340, that is, the gan power device to be measured. By using the measurement port, the current and voltage parameters of the dynamic working condition switching characteristic and the conduction characteristic of the gallium nitride power device to be measured are obtained by connecting the corresponding current sensor, the current probe, the voltage clamping circuit (the voltage clamping circuit is connected between the source electrode and the drain electrode of the lower switching tube 340) and the voltage probe.
Referring to fig. 6, fig. 6 is a schematic test diagram of a test system for characteristic study of a gallium nitride power device under dynamic conditions according to an embodiment of the present invention, and a specific test process of the test system of the embodiment is described with reference to fig. 6.
In the test system of this embodiment, the characteristics of the gan power device under different temperature and dynamic conditions can be examined by adjusting the current of the heating resistor of the temperature control heating unit 350. By adjusting the load sub-unit connected to the upper switch tube 320 and the load size of the corresponding load sub-unit, the characteristic measurement of the gan power device under different load currents, different pulse modes and different switch modes (soft switch, hard switch and semi-soft switch) is realized. The digital signal processing control board 600 is used for providing programmable switching instructions of PWM signals with adjustable pulse widths (different frequencies) for driving the upper switch tube 320 and the lower switch tube 340 of the performance evaluation daughter board 100, so as to examine the characteristics of the tested gallium nitride power device under dynamic conditions and different frequencies.
In this embodiment, optionally, the current sensor, the current probe, the voltage clamp circuit, the voltage probe, the oscilloscope 1 and the oscilloscope 2 are respectively adopted to realize the real-time measurement and characterization of the current parameter and the voltage parameter of the switching characteristic and the dynamic resistance characteristic of the measured gallium nitride power device under the dynamic condition. For example, the dynamic resistance can be monitored by measuring the turn-on voltage (V) of the turn-on transient of the GaN power device under testds,on) And conduction current (I)d) And Tektronix MDO3104 oscilloscope time-by-time division (V)ds,on＝Rds,on/Id) Wherein, the voltage clamping circuit can dynamically monitor the V of the tested gallium nitride power device under different test conditionsds,onThe measurement of the on-current can be realized by a current probe.
The test system for characteristic research of the gallium nitride power device under the dynamic working condition is based on a comprehensive gallium nitride power device dynamic resistance research environment model, wherein the temperature control heating unit can realize the investigation of the tested gallium nitride power device under different temperature scenes; the adjustable DC-link voltage can realize different DC-link voltages in an environment model; the load unit can enable the tested gallium nitride power device to work under different current, switch modes and pulse modes; the adjustable PWM signal provides switching instructions of switching tubes with different frequencies; the test system comprises comprehensive gallium nitride power device dynamic resistance research environment model variables, and can measure and research the characteristics of the gallium nitride power device under dynamic working conditions under different working condition factor combinations.
It should be noted that, because the current gallium nitride power devices have different packaging forms due to different device structures, heat dissipation, parasitic optimization and other comprehensive design considerations, the performance evaluation daughter board for minimizing the loop parasitic parameters can be designed in a targeted manner according to the gallium nitride power devices packaged differently, so that the related characteristics of the tested gallium nitride power devices packaged differently under high-frequency and continuous pulses can be accurately measured and characterized, and the synchronous measurement of the switching characteristics and the dynamic resistance characteristics of the gallium nitride power devices packaged differently under different test condition combinations (including temperature, DC-link voltage, current, frequency, switching mode, pulse mode and the like) can be realized.
In the test system for characteristic study of the gallium nitride power device under dynamic working conditions, the temperature, the load, the PWM signal and the DC-link voltage can be independently adjusted, that is, various environmental influence factors (temperature, DC-link voltage, current, frequency, switching mode and pulse mode) of the power supply working condition where the gallium nitride power device is located are flexibly adjustable, and corresponding environmental factor combinations can be respectively designed according to different study test purposes, so as to realize targeted study on the switching characteristic and the dynamic resistance characteristic of the tested gallium nitride power device under different dynamic working conditions.
It should be noted that the test system for characteristic study under the dynamic working condition of the gallium nitride power device in the embodiment can be flexibly expanded to other performance study fields besides the electrical characteristics of the gallium nitride power device. The DSP control board in the test system can be triggered by Logic gate level signals (Transistor-Transistor Logic, TTL) of other test systems, and test trigger signals of different test systems are synchronized, so that application of synchronously researching other characteristic parameters of the gallium nitride power device under dynamic working conditions is expanded. For example, under a dynamic working condition, the electrical and thermal characteristics in the device of the gallium nitride power device are influenced by the coupling of the device structure, the transient electrical characteristics of the device, the transient temperature characteristics of the device and the mechanical stress of a device channel, and the test system can realize the synchronous multi-dimensional investigation of the electrical characteristics and the thermal characteristics of the gallium nitride power device under the dynamic working condition by identifying the synchronous TTL signal of the thermal test equipment, so that more thermoelectric characteristic details and a fact basis can be provided for the thermoelectric coupling mechanism research of the (ultra) wide-bandgap semiconductor power device under the transient working condition.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrases "comprising one of \8230;" does not exclude the presence of additional like elements in an article or device comprising the element. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The directional or positional relationships indicated by "upper", "lower", "left", "right", etc., are based on the directional or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A test system for characteristic research of a gallium nitride power device under dynamic working conditions is characterized by comprising: a performance evaluation daughter board and a performance evaluation mother board, wherein,
the performance evaluation motherboard comprises a plurality of access ports and a plurality of control modules, wherein the access ports are used for receiving input PWM signals, DC-link voltage and driving voltage, and both the PWM signals and the DC-link voltage can be regulated; the performance evaluation daughter board is plugged with the performance evaluation mother board to acquire the PWM signal, the DC-link voltage and the driving voltage;
the performance evaluation daughter board is provided with a test circuit module, the test circuit module comprises an upper switch tube driving unit, an upper switch tube, a lower switch tube driving unit, a lower switch tube, a temperature control heating unit, a load unit and a plurality of measurement ports, wherein,
the lower switching tube is a tested gallium nitride power device; the upper switching tube and the lower switching tube are connected to form a half-bridge circuit; the DC-link voltage provides working voltage required by the half-bridge circuit;
the upper switching tube driving unit is connected with the upper switching tube and controls the upper switching tube to be turned on or turned off according to the PWM signal; the lower switching tube driving unit is connected with the lower switching tube and controls the lower switching tube to be turned on or turned off according to the PWM signal;
the load unit is connected with the upper switch tube; the temperature control heating unit is attached to the lower switch tube;
different test condition combinations are obtained by adjusting the temperature control heating unit, the load unit, the PWM signal and the DC-link voltage, and the electrical characteristic parameter measurement of the tested gallium nitride power device under different test condition combinations is realized by utilizing the plurality of measurement ports.
2. The system for testing the characteristics of the GaN power device under the dynamic working condition according to claim 1, wherein the upper switch tube driving unit comprises a power supply DC/DC circuit and an upper switch tube driving circuit of the upper switch tube driving unit which are connected, wherein,
a power supply DC/DC circuit of the upper switching tube driving unit provides working voltage of the upper switching tube driving circuit;
the upper switch tube driving circuit is connected with the upper switch tube and controls the upper switch tube to be turned on and off according to the PWM signal of the upper switch tube.
3. The system for testing the characteristics of the gallium nitride power device under the dynamic working condition according to claim 2, wherein the lower switch tube driving unit comprises a power supply DC/DC circuit of the lower switch tube driving unit and a lower switch tube driving circuit which are connected, wherein,
a power supply DC/DC circuit of the lower switching tube driving unit provides working voltage of the lower switching tube driving circuit;
the lower switching tube driving circuit is connected with the lower switching tube and controls the lower switching tube to be turned on and off according to a lower switching tube PWM signal.
4. The system for testing the characteristic research of the gallium nitride power device under the dynamic working condition according to claim 1, wherein the temperature control voltage of the temperature control heating unit is the driving voltage, the temperature control heating unit is a heating resistor, and the testing conditions of different temperatures are provided by adjusting the resistance value of the heating resistor.
5. The system for testing the characteristics of the GaN power device under the dynamic condition of claim 1, wherein the load unit comprises a first load subunit and a second load subunit, wherein,
the first load subunit comprises a first inductor, and the first inductor is connected between the source electrode and the drain electrode of the upper switching tube;
the second load subunit comprises a second inductor, a first capacitor and a first resistor, wherein the first end of the second inductor is connected with the source electrode of the upper switching tube, and the first capacitor and the first resistor are connected in series between the second end of the second inductor and the drain electrode of the upper switching tube;
when the first load subunit is connected with the upper switching tube, test conditions of different load currents in a double-pulse mode are provided by adjusting the load of the first inductor;
when the second load subunit is connected with the upper switching tube, test conditions of different switching modes and different load current modes in a continuous flushing mode are provided by adjusting the load of the second inductor and the first resistor.
6. The system for testing the characteristics of the gallium nitride power device under the dynamic working condition according to claim 1, wherein the test circuit module further comprises a second capacitor and a voltage clamp circuit, wherein the second capacitor is connected across the upper switching tube and the lower switching tube, and the voltage clamp circuit is connected between the drain and the source of the lower switching tube.
7. The system for testing the characteristic research of the gallium nitride power device under the dynamic working condition according to claim 1, further comprising an auxiliary low voltage power supply connected to the corresponding access port of the performance evaluation motherboard, wherein the auxiliary low voltage power supply is used for providing the driving voltage.
8. The system of claim 1, further comprising an adjustable high voltage DC voltage source connected to a corresponding access port of the performance evaluation motherboard, the adjustable high voltage DC voltage source configured to provide an adjustable DC-link voltage.
9. The system for testing the characteristics of the gallium nitride power device under dynamic conditions according to claim 3, further comprising a digital signal processing control board connected to the corresponding access ports of the performance evaluation motherboard, the digital signal processing control board being configured to provide the adjustable upper switching tube PWM signal and the adjustable lower switching tube PWM signal.
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